Дисертації з теми "Dislocation transport"
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Prokofjev, Sergei, Victor Zhilin, Erik Johnson, and Ulrich Dahmen. "The effect of the dislocation elasticity on the thermal motion of attached particle." Universitätsbibliothek Leipzig, 2016. http://nbn-resolving.de/urn:nbn:de:bsz:15-qucosa-193499.
Повний текст джерелаValdenaire, Pierre-Louis. "Plasticité cristalline : Equations de transport et densités de dislocations." Thesis, Paris Sciences et Lettres (ComUE), 2016. http://www.theses.fr/2016PSLEM002/document.
Повний текст джерелаThe mechanical behavior of industrial metallic alloys, in particular those used in the aerospace industry, is controlled by the existence of several types of precipitates and by the nucleation and propagation of crystalline defects such as dis- locations. The understanding of this behavior requires continuous models to access the macroscopic scale. However, even today, conventional plasticity theories use mesoscopic variables and evolution equations that are not based on the transport of dislocations. Therefore, these theories are based on phenomenological laws that must be calibrated for each material, or, for each specific applications. It is therefore highly desirable to make link between the micro and macro scales, in order to derive a continuous theory of plasticity from the fundamental equations of the dislocation dynamics. The aim of this thesis is precisely to contribute the elaboration of such a theory. The first step has consisted to rigorously establish a coarse graining procedure in a simplified situation. We have then obtained a set of hyperbolic transport equations on dislocation densities, controlled by a local friction stress and a local back-stress that emerge from the scale change. We have then developed a numerical procedure to compute these local terms and analyze their behavior. Finally, we have developed an efficient numerical scheme to integrate the transport equations as well as a multigrid spectral scheme to solve elastic equilibrium associated to an arbitrary eigenstrain in an elastically heterogeneous and anisotropic medium
Prokofjev, Sergei I., Erik Johnson, and Ulrich Dahmen. "Kinetics of dissolution of liquid Pb nano-inclusions attached to a dislocation in aluminum." Universitätsbibliothek Leipzig, 2016. http://nbn-resolving.de/urn:nbn:de:bsz:15-qucosa-198539.
Повний текст джерелаProkofjev, Sergei, Victor Zhilin, Erik Johnson, and Ulrich Dahmen. "The effect of the dislocation elasticity on the thermal motion of attached particle." Diffusion fundamentals 6 (2007) 29, S. 1-2, 2007. https://ul.qucosa.de/id/qucosa%3A14204.
Повний текст джерелаProkofjev, Sergei I., Erik Johnson, and Ulrich Dahmen. "Correlated thermal motion of two liquid Pb inclusions on a dislocation in an Al-based alloy." Universitätsbibliothek Leipzig, 2015. http://nbn-resolving.de/urn:nbn:de:bsz:15-qucosa-183698.
Повний текст джерелаProkofjev, Sergei I., Erik Johnson, and Ulrich Dahmen. "Kinetics of dissolution of liquid Pb nano-inclusions attached to a dislocation in aluminum." Diffusion fundamentals 24 (2015) 41, S. 1, 2015. https://ul.qucosa.de/id/qucosa%3A14558.
Повний текст джерелаProkofjev, Sergei I., Erik Johnson, and Ulrich Dahmen. "Correlated thermal motion of two liquid Pb inclusions on a dislocation in an Al-based alloy." Diffusion fundamentals 20 (2013) 81, S. 1-2, 2013. https://ul.qucosa.de/id/qucosa%3A13668.
Повний текст джерелаHernandez, Velazquez Hector Alonso. "Numerical stabilization for multidimensional coupled convection-diffusion-reaction equations: Applications to continuum dislocation transport." Doctoral thesis, Universite Libre de Bruxelles, 2017. https://dipot.ulb.ac.be/dspace/bitstream/2013/257833/6/contratHH.pdf.
Повний текст джерелаDoctorat en Sciences de l'ingénieur et technologie
info:eu-repo/semantics/nonPublished
Kords, Christoph [Verfasser]. "On the role of dislocation transport in the constitutive description of crystal plasticty / Christoph Kords." Aachen : Hochschulbibliothek der Rheinisch-Westfälischen Technischen Hochschule Aachen, 2014. http://d-nb.info/1049557328/34.
Повний текст джерелаSumiyoshi, Hiroaki. "Geometrical Responses in Topological Materials." 京都大学 (Kyoto University), 2017. http://hdl.handle.net/2433/225387.
Повний текст джерелаGarandet, Jean-Paul. "Etude des phénomènes de transport et des défauts cristallins dans des alliages Ga-Sb et Ga-In-Sb élaborés par la méthode Bridgman." Grenoble INPG, 1989. http://www.theses.fr/1989INPG0058.
Повний текст джерелаDjaka, Komlan Sénam. "Développement et applications d’une technique de modélisation micromécanique de type "FFT" couplée à la mécanique des champs de dislocations." Thesis, Université de Lorraine, 2016. http://www.theses.fr/2016LORR0250/document.
Повний текст джерелаFast Fourier transform (FFT)-based methods are developed to solve both the elasto-static equations of the Field Dislocation Mechanics (FDM) theory and the dislocation density transport equation of polarized or geometrically necessary dislocation (GND) densities for FDM and its mesoscopic extension, i.e. the Phenomenological Mesoscopic Field Dislocations Mechanics (PMFDM). First, a numerical spectral approach is developed to solve the elasto-static FDM equations in periodic media for the determination of local mechanical fields arising from the presence of both polarized dislocation densities and elastic heterogeneities for linear elastic materials. The elastic fields are calculated in an accurate fashion and without numerical oscillation, even when the dislocation density is restricted to a single pixel (for two-dimensional problems) or a single voxel (for three-dimensional problems). These results are obtained by applying the differentiation rules for first and second derivatives based on finite difference schemes together with the discrete Fourier transform. The results show that the calculated elastic fields with the present spectral method are accurate for different cases considering individual screw and edge dislocations, the interactions between inhomogeneities of various geometries/elastic properties and different distributions of dislocation densities (dislocation dipoles, polygonal loops in two-phase composite materials). Second, a numerical spectral approach is developed to solve in a fast, stable and accurate fashion, the hyperbolic-type dislocation density transport equation governing the spatial-temporal evolution of dislocations in the FDM theory. Low-pass spectral filters are employed to control both the high frequency oscillations inherent to the Fourier method and the fast-growing numerical instabilities resulting from the hyperbolic nature of the equation. The method is assessed with numerical comparisons with exact solutions and finite element simulations in the case of the simulation of annihilation of dislocation dipoles and the expansion/annihilation of dislocation loops. Finally, a numerical technique for solving the PMFDM equations in a crystal plasticity elasto-viscoplastic FFT formulation is proposed by taking into account both the time evolutions of GND and SSD (statistically stored dislocations) densities as well as the jump condition for plastic distortion at material discontinuity interfaces such as grain or phase boundaries. Then, this numerical technique is applied to the simulation of the plastic deformation of model microstructures like channel-type two-phase composite materials and of polycrystalline metals
Murphy, John Douglas. "The properties of nitrogen and oxygen in silicon." Thesis, University of Oxford, 2006. http://ora.ox.ac.uk/objects/uuid:d6ff6bba-f9ec-497b-b0f4-2d4162f784cc.
Повний текст джерелаBonell, Frédéric. "Analyse du transport dans les jonctions tunnel magnétiques épitaxiées à barrière de MgO(001) par manipulation des interfaces, de la barrière et des électrodes." Phd thesis, Université Henri Poincaré - Nancy I, 2009. http://tel.archives-ouvertes.fr/tel-00456413.
Повний текст джерелаSakwe, Sakwe Aloysius. "Formation and properties of dislocations during crystal growth of bulk silicon carbide by the physical vapor transport method." Aachen Shaker, 2007. http://d-nb.info/989883353/04.
Повний текст джерелаSakwe, Sakwe Aloysius. "Formation and properties of dislocations during crystal growth of bulk silicon carbide by the physical vapor transport method /." Aachen : Shaker, 2008. http://d-nb.info/989883353/04.
Повний текст джерелаGhorbel, Mohamed-Amin. "Analyse numérique de la dynamique des dislocations et applications à l'homogénéisation." Phd thesis, Ecole des Ponts ParisTech, 2007. http://pastel.archives-ouvertes.fr/pastel-00002190.
Повний текст джерелаSakwe, Sakwe A. [Verfasser]. "Formation and Properties of Dislocations during Crystal Growth of Bulk Silicon Carbide by the Physical Vapor Transport Method / Sakwe A Sakwe." Aachen : Shaker, 2008. http://d-nb.info/1162793627/34.
Повний текст джерелаCarosella, Francesca. "Étude théorique des phénomènes de transport électronique dans les puits quantiques AlGaN/GaN." Lille 1, 2005. http://www.theses.fr/2005LIL10125.
Повний текст джерелаNous avons ensuite abordé l'étude des mécanismes de diffusion intrinsèques, en établissant pour ces systèmes bidimensionnels le potentiel diffuseur associé aux pseudo particules hybrides, résultant de l'interaction entre les phonons optiques et les plasmons. Fort de cette base, qui a permis pour la première fois le calcul de la mobilité théorique maximum, nous avons pu enfin aborder l'étude des centres diffuseurs extrinsèques les plus déterminants Nous avons démontré qu'ils étaient liés à la présence de dislocations ainsi qu'à la qualité des interfaces présentant des rugosités (ou des fluctuations) liées aussi bien à leur structure géométrique qu'à la répartition hétérogène des charges d'interface La comparaison de nos résultats théoriques avec différents résultats expérimentaux a permis de démontrer que les dislocations introduisent des niveaux extrinsèques légers situés à environ 110 meV sous la bande de conduction de GaN et que leur potentiel détermine en grande partie la mobilité des échantillons contenant de faibles valeurs de densité de porteurs, alors que les mécanismes de rugosité, caractérisés par le biais d'un paramètre de corrélation, sont responsables de la chute des valeurs de mobilité dans le domaine des hautes densités de porteurs libres. Ces résultats devraient permettre d'affiner les méthodes de croissance cristalline selon le domaine de densité de porteurs qui sera choisi pour la réalisation des composants
Joblot, Sylvain, and S. Joblot. "Croissance d'hétérostructures à base de GaN sur substrat de silicium orienté (001): applications aux transistors à haute mobilité d'électrons." Phd thesis, Université de Nice Sophia-Antipolis, 2007. http://tel.archives-ouvertes.fr/tel-00396384.
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