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1
Nechay, Bettina, Megan Snook, Harold Hearne, Ty McNutt, Victor Veliadis, Sharon Woodruff, R. S. Howell, David Giorgi, Joseph White, and Stuart Davis. "High-Yield 4H-SiC Thyristors for Wafer-Scale Interconnection." Materials Science Forum 717-720 (May 2012): 1171–74. http://dx.doi.org/10.4028/www.scientific.net/msf.717-720.1171.
Повний текст джерелаАнотація:
Modern power conditioning systems require large active area devices which can support high currents. Though the breakdown and thermal properties of SiC make it an excellent choice for power switching applications, active area size is currently limited due to material and processing defects. One alternative is to parallel discrete diced die to achieve large active areas. However, this increases cost and complexity through dicing, soldering, and forming multiple wire bonds. Furthermore, paralleling discrete devices increases package volume/weight and reduces power density. To overcome these issues and achieve devices of high current switching capabilities, thyristors were designed and fabricated for the purpose of wafer-scale interconnection - which avoids the need of dicing and bonding and can achieve significant current density improvement over the paralleled diced device approach. Discrete thyristors fabricated for interconnection exhibited excellent yields and good uniformity of both blocking and on-state characteristics, showing great promise for large-scale interconnection.
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Zhang, Wenli, Zhengyang Liu, Fred Lee, Shuojie She, Xiucheng Huang, and Qiang Li. "A Gallium Nitride-Based Power Module for Totem-Pole Bridgeless Power Factor Correction Rectifier." International Symposium on Microelectronics 2015, no. 1 (October 1, 2015): 000324–29. http://dx.doi.org/10.4071/isom-2015-wp11.
Повний текст джерелаАнотація:
The totem-pole bridgeless power factor correction (PFC) rectifier has recently gained popularity for ac-dc power conversion. The emerging gallium nitride (GaN) high-electron-mobility transistor (HEMT), having a small body diode reverse recovery effect and low switching loss, is a promising device for use in the totem-pole approach. The design, fabrication, and thermal analysis of a GaN-based full-bridge multi-chip module (MCM) for totem-pole bridgeless PFC rectifier are introduced in this work. Four cascode GaN devices using the same pair of high-voltage GaN HEMT and low-voltage silicon (Si) power metal-oxide-semiconductor field-effect transistor (MOSFET) chips, as used in the discrete TO-220 package, were integrated onto one aluminum nitride direct-bonded-copper (AlN-DBC) substrate in a newly designed MCM. This integrated power module achieves the same function as four discrete devices mounted on the circuit board. In this module design, the Si and GaN bare die were arranged in a stack-die format for each cascode device to eliminate the critical common source inductance, and thus to reduce parasitic ringing at turn-off transients. In addition, an extra capacitor was added in parallel with the drain-source terminals of the Si MOSFET in each cascode GaN device to compensate for the mismatched junction capacitance between the Si MOSFET and GaN HEMT, which could accomplish the internal zero-voltage switching of the GaN device and reduce its turn-on loss. The AlN-DBC substrate and the flip-chip format were also applied in the module design. This GaN-based MCM shows an improved heat dissipation capability based on the thermal analysis and comparison with the discrete GaN device. The totem-pole bridgeless PFC rectifier built using this integrated power module is expected to have a peak efficiency of higher than 99% with a projected power density greater than 400 W/in3.
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Shahed, Md Tanvir, and A. B. M. Harun-Ur Rashid. "An Improved Topology of Isolated Bidirectional Resonant DC-DC Converter Based on Wide Bandgap Transistors for Electric Vehicle Onboard Chargers." International Transactions on Electrical Energy Systems 2023 (March 2, 2023): 1–18. http://dx.doi.org/10.1155/2023/2609168.
Повний текст джерелаАнотація:
This article proposes an improved topology for an isolated bidirectional resonant DC-DC converter for electric vehicle (EV) onboard chargers. As opposed to the conventional capacitor-inductor-inductor-inductor-capacitor (CLLLC) resonant converter, the proposed converter’s resonant circuit is composed of a capacitor-inductor-inductor-inductor (CLLL) structure, whose inductances, except the capacitor, can be fully integrated with the leakage and mutual inductances of the high-frequency transformer (HF). Therefore, this offers a smaller size, lower costs, minimal power loss, and eventually higher efficiency. Again, the proposed converter design is based on wide bandgap (WBG) transistor switches that operate at MHz-level switching frequency to achieve high power density, high efficiency, and high compactness. A discrete-time proportional integral derivative (PID) controller has been designed using the phase-shifted pulse width modulation (PSPWM) technique to assure closed-loop control of the proposed CLLL converter. The PID controller parameters have been optimized using both the genetic algorithm (GA) and particle swarm optimization (PSO) algorithm and a comparative analysis has been presented between the two algorithms. To achieve fast switching with very little switching loss, the converter is simulated with several wide bandgap (WBG) switching devices. A performance comparison with conventional Si-based switching devices is also provided. A precise power loss model of the semiconductor switches has been devised from the manufacturer’s datasheet to achieve a perfect thermal design for the converter. A 5 kW CLLL converter with an input range of 400–460 V direct current (DC) and an output range of 530–610 V DC, and a switching frequency of 1 MHz has been designed and investigated under various loading scenarios. Gallium nitride (GaN) switching device-based designs achieved the highest levels of efficiency among the switching devices. The efficiency of this device is 97.40 percent in charging mode and 96.67 percent in discharging mode.
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Nepsha, Fedor, and Roman Belyaevsky. "Development of Interrelated Voltage Regulation System for Coal Mines Energy Efficiency Improving." E3S Web of Conferences 41 (2018): 03013. http://dx.doi.org/10.1051/e3sconf/20184103013.
Повний текст джерелаАнотація:
In this paper, the authors propose an algorithm for interrelated voltage regulation in the power supply system of coal mine which allows to provide a normative voltage level and to minimize the level of active power consumption. A feature of the proposed algorithm is a separate consideration of discrete and nondiscrete variables. Nondiscrete variables are represented as a state matrix. The optimization of nondiscrete variables is performed for each state. The algorithm chooses a state with the minimal active power consumption. The obtained values of discrete and nondiscrete variables are transferred in the form of control signals to voltage regulation devices. In this case, the periodicity of the switching is determined by the resource of the on-load tap-changing device. The use of this algorithm will theoretically allow increasing the energy efficiency of power supply systems of coal mines.
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Lu, Xiang, Volker Pickert, Maher Al-Greer, Cuili Chen, Xiang Wang, and Charalampos Tsimenidis. "Temperature Estimation of SiC Power Devices Using High Frequency Chirp Signals." Energies 14, no. 16 (August 11, 2021): 4912. http://dx.doi.org/10.3390/en14164912.
Повний текст джерелаАнотація:
Silicon carbide devices have become increasingly popular in electric vehicles, predominantly due to their fast-switching speeds, which allow for the construction of smaller power converters. Temperature sensitive electrical parameters (TSEPs) can be used to determine the junction temperature, just like silicon-based power switches. This paper presents a new technique to estimate the junction temperature of a single-chip silicon carbide (SiC) metal–oxide–semiconductor field-effect transistor (MOSFET). During off-state operation, high-frequency chirp signals below the resonance frequency of the gate-source impedance are injected into the gate of a discrete SiC device. The gate-source voltage frequency response is captured and then processed using the fast Fourier transform. The data is then accumulated and displayed over the chirp frequency spectrum. Results show a linear relationship between the processed gate-source voltage and the junction temperature. The effectiveness of the proposed TSEPs is demonstrated in a laboratory scenario, where chirp signals are injected in a stand-alone biased discrete SiC module, and in an in-field scenario, where the TSEP concept is applied to a MOSFET operating in a DC/DC converter.
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Ren, Jie, and Jian She Tian. "Simulation on Multi-Objective Wind Power Integration Using Genetic Algorithm with Adaptive Weight." Advanced Materials Research 986-987 (July 2014): 529–32. http://dx.doi.org/10.4028/www.scientific.net/amr.986-987.529.
Повний текст джерелаАнотація:
Aiming at problems which were brought by large-scale wind power integration, and the problem of multi-objective reactive power optimization considering the coexistence of discrete variables and continuous variables, a method of simulation based on genetic algorithm with adaptive weight is brought out. A solving thinking presents that capacitor switching and transformer tap adjusting and other discrete equipments are first, and the action sequence of generator and dynamic reactive power compensation (DRPC) devices and other continuous equipments setting follows, which is presented that optimization problem is decomposed into continuous variable optimization and discrete variable optimization, then they are solved respectively and cross iteration until convergence. In view of the optimization complexity and the coexistence of discrete variables and continuous variables, genetic algorithm with adaptive weight is presented for finding global optimal solution. Case studies show that the proposed thinking and algorithm for solving multi-objective reactive power optimization are reasonable.
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Kim, Woo Seok, Minju Jeong, Sungcheol Hong, Byungkook Lim, and Sung Il Park. "Fully Implantable Low-Power High Frequency Range Optoelectronic Devices for Dual-Channel Modulation in the Brain." Sensors 20, no. 13 (June 29, 2020): 3639. http://dx.doi.org/10.3390/s20133639.
Повний текст джерелаАнотація:
Wireless optoelectronic devices can deliver light to targeted regions in the brain and modulate discrete circuits in an animal that is awake. Here, we propose a miniaturized fully implantable low-power optoelectronic device that allows for advanced operational modes and the stimulation/inhibition of deep brain circuits in a freely-behaving animal. The combination of low power control logic circuits, including a reed switch and dual-coil wireless power transfer platform, provides powerful capabilities for the dissection of discrete brain circuits in wide spatial coverage for mouse activity. The actuating mechanism enabled by a reed switch results in a simplified, low-power wireless operation and systematic experimental studies that are required for a range of logical operating conditions. In this study, we suggest two different actuating mechanisms by (1) a magnet or (2) a radio-frequency signal that consumes only under 300 µA for switching or channel selection, which is a several ten-folds reduction in power consumption when compared with any other existing systems such as embedded microcontrollers, near field communication, and Bluetooth. With the efficient dual-coil transmission antenna, the proposed platform leads to more advantageous power budgets that offer improved volumetric and angular coverage in a cage while minimizing the secondary effects associated with a corresponding increase in transmitted power.
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Mishra, Sanhita, Sarat Chandra Swain, and Ritesh Dash. "Switching transient analysis for low voltage distribution cable." Open Engineering 12, no. 1 (January 1, 2022): 29–37. http://dx.doi.org/10.1515/eng-2022-0004.
Повний текст джерелаАнотація:
Abstract Low voltage cable is primarily connected from the transmission system to several household applications. It is quite common that switching transient in the power system during the energization of the high voltage and low voltage cables have a very crippling effect on the cable as well as the power system components. Hence, an experiment has been performed in the laboratory with a low voltage cable-connected motor system. The experimental results have been validated in the simulation platform, and they are capable of predicting the transient behavior during power cable energization. The effect of transients on power cables during the energization of devices has been investigated in this study in the form of voltage, current, and frequency. Discrete wavelet transform is implemented for the decomposition of the transient current. The generated approximation signal is used to quantify the severity during switching transient condition.
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McPherson, B., B. Passmore, P. Killeen, D. Martin, A. Barkley, and T. McNutt. "Package design and development of a low cost high temperature (250°C), high current (50+A), low inductance discrete power package for advanced Silicon Carbide (SiC) and Gallium Nitride (GaN) devices." International Symposium on Microelectronics 2013, no. 1 (January 1, 2013): 000592–97. http://dx.doi.org/10.4071/isom-2013-wa63.
Повний текст джерелаАнотація:
The demands for high-performance power electronics systems are rapidly surpassing the power density, efficiency, and reliability limitations defined by the intrinsic properties of silicon-based semiconductors. The advantages of post silicon materials, including Silicon Carbide (SiC) and Gallium Nitride (GaN), are numerous, including: high temperature operation, high voltage blocking capability, extremely fast switching, and superior energy efficiency. These advantages, however, are severely limited by conventional power packages, particularly at temperatures higher than 175°C and >100 kHz switching speeds. In this discussion, APEI, Inc. presents the design of a newly developed discrete package specifically intended for high performance, high current (>50A), rapid switching, and extended temperature (>250°C) wide band gap devices which are now readily available on the commercial market at voltages exceeding 1200V. Finite element analysis (FEA) results will be presented to illustrate the modeling process, design tradeoffs, and critical decisions fundamental to a high performance package design. A low profile design focuses on reducing parasitic impedances which hinder high speed switching. A notable increase in the switching speed and frequency reduces the size and volume of associated filtering components in a power converter. Operating at elevated temperatures reduces the requirements of the heat removal system, ultimately allowing for a substantial increase in the power density. Highlights of these packages include the flexibility to house a variety of device sizes and types, co-packaged antiparallel diodes, a terminal layout designed to allow rapid system configuration (for paralleling or creating half- and full-bridge topologies), and a novel wire bondless backside cooled construction for lateral GaN HEMT devices. Specific focus was placed on minimizing the cost of the materials and fabrication processes of the package components. The design of the package is discussed in detail. High temperature testing of a SiC assembly and electrical test results of a high frequency GaN based boost converter will be presented to demonstrate system level performance advantages.
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Roberts, J., A. Mizan, and L. Yushyna. "Optimized High Power GaN Transistors." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2015, HiTEN (January 1, 2015): 000195–99. http://dx.doi.org/10.4071/hiten-session6-paper6_1.
Повний текст джерелаАнотація:
GaN transistors intended for use at 600–900 V and that are capable of providing of 30–100 A are being introduced this year. These devices have a substantially better switching Figure-of-Merit (FOM) than silicon power switches. Rapid market acceptance is expected leading to compound annual growth rates of 85 %. However these devices present new packaging challenges. Their high speed combined with the very high current being switched demands that very low inductance packaging must be combined with highly controlled drive circuitry. While convention, and the usually vertical power device die structure, has largely determined power transistor package formats in the past, the lateral nature of the today GaN devices requires the use of new package types. The new packages have to operate at high temperatures while providing effective heat removal, low inductance, and low series resistance. Because GaN devices are lateral they require the package metal tracks to be integrated within the on-chip tracks to carry the current away from the thin on-chip metal tracks. The new GaN devices are available in two formats: one for use in embedded modular assemblies and the other for use mounted upon conventional circuit board systems. The package intended for discrete printed circuit board (PCB) assemblies has a top side cooling option that simplifies the thermal interface to the heat sink. The paper describes the die layout including the added copper tracks. The corresponding package elements that interface directly with the surface of the die play a vital role in terms of the current handling. They also provide the interface to the external busbars that allow the package to be mounted within, or on PCB. The assembly has been subject to extensive thermal analysis and the performance of a 30 A, 650 V transistor is described.
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Zhang, Liqi, Suxuan Guo, Pengkun Liu, and Alex Q. Huang. "Comparative Evaluation and Analysis of Gate Driver Impacts on a SiC MOSFET-Gate Driver Integrated Power Module." International Symposium on Microelectronics 2017, no. 1 (October 1, 2017): 000247–51. http://dx.doi.org/10.4071/isom-2017-wa35_023.
Повний текст джерелаАнотація:
Abstract SiC MOSFET-gate driver integrated power module is proposed to provide ultra-low stray inductance compared to traditional TO-247 or TO-220 packages. Kelvin connection eliminates the common source stray inductance and zero external gate resistor enables faster switching. This module can be operated at MHz switching frequency for high power applications with lower switching losses than discrete packages. Two different gate drivers and two different SiC MOSFETs are grouped and integrated into three integrated power modules. Comparative evaluation and analysis of gate driver impacts on switching speed of SiC MOSFET is shown in detail. The paper provides an insight of the gate driver impacts on the device switching performance in an integrated power module.
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Zhou, Han, Guoxu Liu, Jianhua Zeng, Yiming Dai, Weilin Zhou, Chongyong Xiao, Tianrui Dang, Wenbo Yu, Yuanfen Chen, and Chi Zhang. "Recent Progress of Switching Power Management for Triboelectric Nanogenerators." Sensors 22, no. 4 (February 21, 2022): 1668. http://dx.doi.org/10.3390/s22041668.
Повний текст джерелаАнотація:
Based on the coupling effect of contact electrification and electrostatic induction, the triboelectric nanogenerator (TENG) as an emerging energy technology can effectively harvest mechanical energy from the ambient environment. However, due to its inherent property of large impedance, the TENG shows high voltage, low current and limited output power, which cannot satisfy the stable power supply requirements of conventional electronics. As the interface unit between the TENG and load devices, the power management circuit can perform significant functions of voltage and impedance conversion for efficient energy supply and storage. Here, a review of the recent progress of switching power management for TENGs is introduced. Firstly, the fundamentals of the TENG are briefly introduced. Secondly, according to the switch types, the existing power management methods are summarized and divided into four categories: travel switch, voltage trigger switch, transistor switch of discrete components and integrated circuit switch. The switch structure and power management principle of each type are reviewed in detail. Finally, the advantages and drawbacks of various switching power management circuits for TENGs are systematically summarized, and the challenges and development of further research are prospected.
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Ketabi, A., M. Khoshkholgh, and R. Feuillet. "A New Approach to Nonsinusoidal Steady-State Power System Analysis." Mathematical Problems in Engineering 2009 (2009): 1–18. http://dx.doi.org/10.1155/2009/584637.
Повний текст джерелаАнотація:
A new analysis method using wavelet domain for steady-state operating condition of power system is developed and introduced. Based on wavelet-Galerkin theory, the system components such as resistor, inductor, capacitor, transmission lines, and switching devices are modeled in discrete wavelet domain for the purpose of steady-state analysis. To solve system equations, they are transferred to wavelet domain by forming algebraic matrix-vector relations using the wavelet transform coefficients and the equivalent circuit is thus built for system simulation. After describing the new algorithm, two-case studies are presented and compared with the simulations in the time domain to verify the accuracy and computational performance.
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Langmaack, Niklas, Florian Lippold, Daiyi Hu, and Regine Mallwitz. "Analysing Efficiency and Reliability of High Speed Drive Inverters Using Wide Band Gap Power Devices." Machines 9, no. 12 (December 9, 2021): 350. http://dx.doi.org/10.3390/machines9120350.
Повний текст джерелаАнотація:
Within the project ‘ARIEL’ an electrical turbo compressor unit for fuel cell applications is deeply investigated. The necessary drive inverter is especially designed for high fundamental frequency and high switching frequency to cope with the requirements of the implemented electrical machine. This paper presents investigations on the inverter’s efficiency and its prospective lifetime at different stages of the development. In the design process different wide band gap power semiconductor devices in discrete packages are evaluated in terms of the achievable power density and efficiency, both by simulations and measurements. Finally, an optimised design using surface mount silicon carbide MOSFETs is developed. Compared to a former inverter design using silicon devices in a three-level topology, the power density of the inverter is significantly increased. The lifetime of power electronic systems is often limited by the lifetime of the power semiconductor devices. Based on loss calculations and the resulting temperature swing of the virtual junction the lifetime of the inverter is estimated for the most frequent operating points and for different mission profiles.
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Wang, Baochao, Shili Dong, Shanlin Jiang, Chun He, Jianhui Hu, Hui Ye, and Xuezhen Ding. "A Comparative Study on the Switching Performance of GaN and Si Power Devices for Bipolar Complementary Modulated Converter Legs." Energies 12, no. 6 (March 25, 2019): 1146. http://dx.doi.org/10.3390/en12061146.
Повний текст джерелаАнотація:
The commercial mature gallium nitride high electron mobility transistors (GaN HEMT) technology has drawn much attention for its great potential in industrial power electronic applications. GaN HEMT is known for low on-state resistance, high withstand voltage, and high switching frequency. This paper presents comparative experimental evaluations of GaN HEMT and conventional Si insulated gate bipolar transistors (Si IGBTs) of similar power rating. The comparative study is carried out on both the element and converter level. Firstly, on the discrete element level, the steady and dynamic characteristics of GaN HEMT are compared with Si-IGBT, including forward and reverse conducting character, and switching time. Then, the elemental switching losses are analyzed based on measured data. Finally, on a complementary buck converter level, the overall efficiency and EMI-related common-mode currents are compared. For the tested conditions, it is found that the GaN HEMT switching loss is much less than for the same power class IGBT. However, it is worth noting that special attention should be paid to reverse conduction losses in the PWM dead time (or dead band) of complementary-modulated converter legs. When migrating from IGBT to GaN, choosing a dead-time and negative gate drive voltage in conventional IGBT manner can make GaN reverse conducting losses high. It is suggested to use 0 V turn-off gate voltage and minimize the GaN dead time in order to make full use of the GaN advantages.
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Gui, Handong, Zheyu Zhang, Ruirui Chen, Jiahao Niu, Leon M. Tolbert, Fei Wang, Daniel Costinett, Benjamin J. Blalock, and Benjamin B. Choi. "Gate Drive Technology Evaluation and Development to Maximize Switching Speed of SiC Discrete Devices and Power Modules in Hard Switching Applications." IEEE Journal of Emerging and Selected Topics in Power Electronics 8, no. 4 (December 2020): 4160–72. http://dx.doi.org/10.1109/jestpe.2019.2937855.
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Raychaudhuri, A., Z. X. Yan, M. J. Deen, and A. C. Seabaugh. "Hysteresis in resonant tunneling diode based multiple-peak driver device for multivalued SRAM cells: analysis, simulation, and experimental results." Canadian Journal of Physics 70, no. 10-11 (October 1, 1992): 993–1000. http://dx.doi.org/10.1139/p92-159.
Повний текст джерелаАнотація:
This paper describes results of our investigation on the hysteresis phenomenon observed in multiple-peak resonant tunneling devices based on a series combination of resonant tunneling diodes (RTDs). We have modelled this hysteresis by assuming that when one of the diodes in the series combination is switching from its prenegative differential resistance (NDR) region to its post-NDR region or back, the others are acting as a combined load to it. Our analytical model based on a load-line analysis with a piecewise-linear approximation for the RTD I–V curve brings out the salient features of hysteresis as measured on a three-peak device based on discrete RTDs. Also, the model provides a first-order quantitative picture that is particularly useful in the context of difficulties in reliable dc circuit simulation on these devices. We have further shown results of our transient circuit simulation on a four-state memory cell that uses the tree-peak device as its driver and constant current metal semiconductor field effect transistor load device. The simulation results clearly bring out the importance of considering hysteresis in the driver device and its implications on important cell parameters such as logic levels, noise margins, and power dissipation. Finally, we verify the simulation scheme with experimental results from an actual memory cell constructed with discrete RTDs and a constant-current load device.
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Tarchała, Grzegorz, and Teresa Orłowska-Kowalska. "Discrete Sliding Mode Speed Control of Induction Motor Using Time-Varying Switching Line." Electronics 9, no. 1 (January 18, 2020): 185. http://dx.doi.org/10.3390/electronics9010185.
Повний текст джерелаАнотація:
Sliding mode control (SMC) of electric drives constitutes a very popular control method for nonlinear multivariable and time-varying systems, e.g., induction motor (IM) drives. Nowadays, IM are the most popular electrical machines (EM) applied in many industrial applications as motion control devices, including electrical and hybrid vehicles. Nowadays, the control systems of EM are mostly realized using digital techniques (microprocessors and microcontrollers). Therefore, all control algorithms should be discretized or the whole control system should be designed in the discrete-time domain. This paper deals with a discrete-time sliding mode control (DSMC) for IM drives. The discrete algorithms for sliding mode control of the motor speed and rotor flux are derived in detail and next tested in simulation research. The simulation tests include the discrete nature of the power converter supplying the IM and present excellent performance of the developed control structure. To obtain the rotor speed regulation invariant to external disturbances, like load torque or inertia, especially during the reaching phase of the switching line, the discrete version of a time-varying switching line was introduced. It is shown that the assumed dynamics of the IM flux and speed is achieved and the proposed control algorithm can be realized using commonly available microcontrollers. The paper is illustrated with comprehensive simulation results for 1.5 kW IM drive, which are verified by experimental tests.
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Zeng, Xiang-jun, Xu Yang, and Zhao-an Wang Xi'an. "Analysis of Capacitive and Inductive Coupling inside Hybrid Integrated Power Electronic Module." Journal of Microelectronics and Electronic Packaging 1, no. 3 (July 1, 2004): 169–75. http://dx.doi.org/10.4071/1551-4897-1.3.169.
Повний текст джерелаАнотація:
Electromagnetic compatibility has to be given enough attention in the design of hybrid Integrated Power Electronic Module (IPEM) due to the sharply decreased distances between power devices and the control/driving circuits as compared to such distances for conventional power electronic equipment built with discrete devices. The high dν/dt, di/dt and high frequency parasitic ringing emanating from the switching circuit can cause serious EMI within the control/driving circuit due to cross-coupling. This paper analyzes the capacitive and inductive cross-coupling problems inside an IPEM. Finite Element Method (FEM) is used to extract the mutual capacitances between the metal bars in the model. Then the influence of dν/dt can be estimated. The high frequency circulating current in the bridge circuits is also investigated since it causes magnetic interference due to mutual inductance coupling. The mutual inductance is calculated with the simplified Partial Element Equivalent Circuit (PEEC) approach and image method. The experiment validates the effectiveness of this evaluation. In the end, the electromagnetic shielding is discussed.
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Kim, Ui-Jin. "Design of a Rectangular Pickup Coil Fabricated on a PCB Using WBG Power Semiconductor in Discrete Package." Applied Sciences 11, no. 5 (March 4, 2021): 2290. http://dx.doi.org/10.3390/app11052290.
Повний текст джерелаАнотація:
Power semiconductors based on wide bandgap (WBG) devices are capable of fast switching and have low on-resistance. Accordingly, a fast sensor with a higher bandwidth is required for circuit inspection based on switch current measurements. Thus, it is necessary to have a current sensor in the printed circuit board (PCB) circuit for diagnosis and protection of the surface mount device (SMD) type circuit system. Accordingly, a pickup coil with the advantages of a high degree of sensor configuration freedom, wide bandwidth, and low cost can be a good alternative. This study analyzes the influence of coil shape and parameters on sensor design as a guideline for embedding a pickup coil in an SMD-type PCB circuit of a WBG power semiconductor-based, half-bridge structure. The mutual inductance and self-inductance values of the coil are considered large variables in the design of a sensor coil for simultaneously maintaining high bandwidth and sensor sensitivity. Therefore, magnetic and frequency response analyses were conducted to verify the correlation with inductance, the influence of coupling capacitance, and the influence of the magnetic field formation via the current flowing through the external trace inside the PCB. The coil model is verified and discussed through simulation and double pulse tests.
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Fonseca, R. M. M., O. Leeuwenburgh, E. Della Rossa, P. M. Van den Hof, and J. D. D. Jansen. "Ensemble-Based Multiobjective Optimization of On/Off Control Devices Under Geological Uncertainty." SPE Reservoir Evaluation & Engineering 18, no. 04 (November 25, 2015): 554–63. http://dx.doi.org/10.2118/173268-pa.
Повний текст джерелаАнотація:
Summary We consider robust ensemble-based (EnOpt) multiobjective production optimization of on/off inflow-control devices (ICDs) for a sector model inspired by a real-field case. The use of on/off valves as optimization variables leads to a discrete control problem. We propose a reparameterization of such discrete controls in terms of switching times (i.e., we optimize the time at which a particular valve is either open or closed). This transforms the discrete control problem into a continuous control problem that can be efficiently handled with the EnOpt method. In addition, this leads to a significant reduction in the number of controls that is expected to be beneficial for gradient quality when using approximate gradients. We consider an ensemble of sector models where the uncertainty is described by different permeability, porosity, net/gross ratios, and initial water-saturation fields. The controls are the ICD settings over time in the three horizontal injection wells, with approximately 15 ICDs per well. Different optimized strategies resulting from different initial strategies were compared. We achieved a mean 4.2% increase in expected net present value (NPV) at a 10% discount rate compared with a traditional pressure-maintenance strategy. Next, we performed a sequential biobjective optimization and achieved an increase of 9.2% in the secondary objective (25% discounted NPV to emphasize short-term production gains) for a minimal decrease of 1% in the primary objective (0% discounted NPV to emphasize long-term recovery gains), as averaged over the 100 geological realizations. The work flow was repeated for alternative numbers of ICDs, showing that having fewer control options lowers the expected value for this particular case. The results demonstrate that ensemble-based optimization work flows are able to produce improved robust recovery strategies for realistic field-sector models against acceptable computational cost.
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Yun, Minghui, Miao Cai, Daoguo Yang, Yiren Yang, Jing Xiao, and Guoqi Zhang. "Bond Wire Damage Detection Method on Discrete MOSFETs Based on Two-Port Network Measurement." Micromachines 13, no. 7 (July 7, 2022): 1075. http://dx.doi.org/10.3390/mi13071075.
Повний текст джерелаАнотація:
Bond wire damage is one of the most common failure modes of metal-oxide semiconductor field-effect transistor (MOSFET) power devices in wire-welded packaging. This paper proposes a novel bond wire damage detection approach based on two-port network measurement by identifying the MOSFET source parasitic inductance (LS). Numerical calculation shows that the number of bond wire liftoffs will change the LS, which can be used as an effective bond wire damage precursor. Considering a power MOSFET as a two-port network, LS is accurately extracted from frequency domain impedance (Z−parameter) using a vector network analyzer under zero biasing conditions. Bond wire cutoff experiments are employed to validate the proposed approach for bond wire damage detection. The result shows that LS increases with the rising severity of bond wire faults, and even the slight fault shows a high sensitivity, which can be effectively used to quantify the number of bond wire liftoffs of discrete MOSFETs. Meanwhile, the source parasitic resistance (RS) extracted from the proposed two-port network measurement can be used for the bond wire damage detection of high switching frequency silicon carbide MOSFETs. This approach offers an effective quality screening technology for discrete MOSFETs without power on treatment.
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Veliadis, Victor. "SiC Mass Commercialization: Present Status and Barriers to Overcome." Materials Science Forum 1062 (May 31, 2022): 125–30. http://dx.doi.org/10.4028/p-6zcw3b.
Повний текст джерелаАнотація:
In an increasingly electrified technology driven world, power electronics is central to the entire clean energy manufacturing economy. Silicon (Si) power devices have dominated power electronics due to their low cost volume production, excellent starting material quality, ease of fabrication, and proven reliability. Although Si power devices continue to improve, they are approaching their operational limits primarily due to their relatively low bandgap, critical electric field, and thermal conductivity that result in high conduction and switching losses, and poor high temperature performance. Silicon Carbide’s (SiC) compelling efficiency and system benefits have led to significant development efforts over the last two decades and today planar and trench MOSFETs, and JFETs are commercially available from several vendors as discrete components or in high power modules in the of 650 V to 1700 V voltage range. High impact application opportunities, where SiC devices are displacing their incumbent Si counterparts, have emerged and include automotive and rail power electronics with reduced losses and reduced cooling requirements; novel data center topologies with reduced cooling loads and higher efficiencies; variable frequency drives for efficient high power electric motors at reduced overall system cost; more efficient, flexible, and reliable grid applications with reduced system footprint; and “more electric aerospace” with weight, volume, and cooling system reductions contributing to energy savings. In particular, SiC insertion in electric vehicles brings major competitive advantages and is a volume application opportunity that can spur manufacturing economies of scale and lower system costs. As SiC continues to grow, the industry is lifting the last barriers to mass commercialization that include higher than Si device cost, relative lack of wafer planarity, the presence of basal plane dislocations, reliability and ruggedness concerns, and the need for a workforce skilled in SiC power technology to keep up with the rising demand. It should be noted that in many applications, insertion of SiC reduces overall system cost compared to Si even though SiC devices can cost 2-3 more than their Si counterparts. This is due to the passive component and cooling system simplifications enabled by the efficient high frequency SiC operation. In this paper, we will review key aspects of SiC technology and discuss overcoming barriers to mass commercialization.
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Khan, Salma, Syed Azeemuddin, and Mohammed Arifuddin Sohel. "Proteretic device: modelling and implementation in electronics and optical domain." Semiconductor Science and Technology 37, no. 5 (April 12, 2022): 055021. http://dx.doi.org/10.1088/1361-6641/ac6200.
Повний текст джерелаАнотація:
Abstract This paper discusses the phenomena of proteresis, commonly known as inverse hysteresis, and the various methods to implement it. Proteresis generates an advanced response when compared to hysteresis, which improves the system’s speed, maintaining the noise immunity intact. This feature of proteresis is seen in multiple naturally occurring phenomena. The paper implements proteresis in domains of electronics and optics, keeping in view essential constraints like area, power, throughput, and speed. The electronic domain consists of two models, one using CMOS circuits and the other using discrete components. The transistor-level design of a proteretic device is on 180 nm CMOS technology, and proof of concept is demonstrated using post-layout simulations. This design is operated on a supply voltage of 1.8 V and consumes significantly less power of 633 µW at a moderate frequency of 10 MHz. The second implementation utilizes discrete components wherein the operational amplifier (op-amp) is utilized to realize the proteretic design. A discussion on the boundary conditions for switching from hysteretic to proteretic is also presented. This design operates at a supply voltage of 12 V from −6 to +6 V and has a high drive current. Finally, the third implementation is in the optical field using semiconductor ring lasers (SRLs). Rate equations are used to model SRL’s and injection locking phenomenon is applied for switching, which is used for high-speed operations.
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Fan, Youpeng, Minmin Xu, Yibing Jie, Jinliang Wang, Xiao Rong, and Nina Lv. "Analysis of Chaos in Three-Level Full-Bridge Converter." Journal of Physics: Conference Series 2549, no. 1 (July 1, 2023): 012021. http://dx.doi.org/10.1088/1742-6596/2549/1/012021.
Повний текст джерелаАнотація:
Abstract As an important part in the active magnetic bearing, its performance has great impact on the active magnetic bearing system. Most of the active magnetic bearing systems use current-mode switching power amplifiers. The full-bridge converter is the main topological structure of switching power amplifier for magnetic bearings. It mainly supplies current to the coil so it can offer enough fore to the rotor. It has abundant nonlinear phenomena as the power conversion device of it lies in the nonlinear region. This paper chooses the proportionally controlled three-level switching power amplifier for magnetic bearings under the mode of pulse width modulation (PWM) as the study object, building a discrete mapping model of full-bridge circuit by stroboscopic sampling and conducting analyses on the bifurcation stability and chaotic characteristics based on this model built. It has established the adjustment range of proportional control coefficient and carrier cycle using numerical calculation, with the correctness of the theoretical analysis being verified by simulation and experimental results. Chaotic phenomena can be eliminated by reducing proportional coefficient of current controller and bus voltage, and increasing the carrier frequency, which enhances the stability of the three-level full-bridge converter.
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Okamura, Katsuya, Keiichi Ise, Masayoshi Wake, Yutaka Osawa, Koichi Takaki, and Ken Takayama. "Characterization of SiC JFET in Novel Packaging for 1 MHz Operation." Materials Science Forum 717-720 (May 2012): 1029–32. http://dx.doi.org/10.4028/www.scientific.net/msf.717-720.1029.
Повний текст джерелаАнотація:
A high power discrete SiC-JFET package for accelerator applications has been developed and tested. Successful operation with a dc voltage of 1 kV, a drain current of 27 A, and a repetition rate of 1 MHz was confirmed. Thermal analysis was carefully attempted. The heat dissipation capacity of 235 W with a water-cooled heat sink and the thermal resistance from its junction to outer-surface of 0.56 K/W were demonstrated. These results exhibit the SiC-JFET is a promising device for a switching power supply in future digital accelerators.
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Le, Duy, Duong Bui, Cao Ngo, and Anh Le. "FLISR Approach for Smart Distribution Networks Using E-Terra Software—A Case Study." Energies 11, no. 12 (November 29, 2018): 3333. http://dx.doi.org/10.3390/en11123333.
Повний текст джерелаАнотація:
A smart grid concept has been defined in recent years, which emphasizes the importance on smart protection and measurement devices, reliable data communication and high security, optimal energy management system, and fault detection, location, isolation and service restoration (FLISR) of distribution networks (DNs). The main objectives of the FLISR approach are to achieve fast fault processing time, reduce the minimum number of interrupted customers, and improve the power supply reliability of the distribution. The conventional FLISR approach is to use signals of fault indicators (FIs) with distribution network states. The discrete installation of FIs to switches or reclosers may slow the processing time of fault detection and location, so it is necessary to develop a more efficient FLISR approach for smart distribution networks using functions of feeder terminal units (FTUs). In this paper, pick-up and tripping signals of overcurrent (OC) relays in combination with distribution grid states (e.g., switching status of devices, loss of voltage…) sent from feeder terminal units (FTUs) are used to detect and locate different fault types. Fault isolation and service restoration of black-out areas are then performed by solving an objective function with two main constraints, including (i) restoring the possible maximum number of out-of-service loads; and (ii) limiting the minimum number of switching operation. Thirteen performance factors (PF) are used for the post-fault service restoration process, consisting of: (i) Power Flow Violations (PFV), (ii) Bus Voltage Violations (BVV), (iii) Total Operation Cost (TOC), (iv) Lost Power (LP), (v) Outage Customer (OC), (vi) Number of Switching Steps (NSS), (vii) Power Losses (LOSS); (viii) Customer Minutes Interruption (CMI), (ix) Load Minutes Interruption (LMI), (x) MAIFI, (xi) SAIFI, (xii) SAIDI, and (xiii) Protection Validation (PRV). E-Terra platform of a distribution management system (DMS) is used to implement the proposed FLISR approach. Simulation and experiment results from a real 22 kV distribution network are also analysed to validate this FLISR approach. As a result, the novel FLISR approach has the ability to identify effectively the over-reaching of OC relays, indicate a mis-coordination risk of adjacent protection devices on the same feeder, and get the total processing time of fault detection, location and isolation as well as ranking all possible service restoration plans in distribution network at less than two minutes.
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Nazemi, Adel, Omid Salari, Mohammad Tavakoli Bina, Masoud Kazemi, and Bahman Eskandari. "Predictive Control for Reduced Structure Multilevel Converters: Experimenting on a Seven Level Packed U-Cell." International Journal of Power Electronics and Drive Systems (IJPEDS) 7, no. 2 (June 1, 2016): 568. http://dx.doi.org/10.11591/ijpeds.v7.i2.pp568-582.
Повний текст джерелаАнотація:
Recently, a branch of multilevel converters is emerged, in which their ‘reduced structure’ topologies use lower number of devices compared to the available topologies. To get a cost efficient converter, lower number of components as well as high quality waveforms, multilevel converters with a ‘reduced structure’ (MCRS) are suitable for high/medium power systems. Also, utilizing the fast microprocessors available today, applications of predictive control in power converters are of very powerful and attractive alternatives to classical controllers. This paper proposes a finite control set model-based predictive control (FCS-MPC) for load current regulation and capacitor voltage balancing for a typical MCRS. A case study considered, three-phase seven level packed U-cell (PUC), which is among reduced structure multilevel converters. A discrete model of the system is derived, and a predictive model-based control is developed according to this model in order to predict the future behavior of the system for all possible switching states; then, the switching state that optimized the cost function is selected. The feasibility of the proposed FCS-MPC strategy for a seven level PUC is evaluated based on simulations with MATLAB/ SIMULINK. Moreover, experimental validation of the proposed control system on a 5 kVA PUC is examined through DSP implementation<strong>.</strong>
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Wang, Lei, Chunmei Xu, Lijun Diao, Jie Chen, Ruichang Qiu, and Peizhen Wang. "Online Open Circuit Fault Diagnosis for Rail Transit Traction Converter Based on Object-Oriented Colored Petri Net Topology Reasoning." Mathematical Problems in Engineering 2016 (2016): 1–10. http://dx.doi.org/10.1155/2016/1842131.
Повний текст джерелаАнотація:
For online open circuit fault diagnosis of the traction converter in rail transit vehicles, conventional approaches depend heavily on component parameters and circuit layouts. For better universality and less parameter sensitivity during the diagnosis, this paper proposes a novel topology analysis approach to diagnose switching device open circuit failures. During the diagnosis, the topology is analyzed with fault reasoning mechanism, which is based on object-oriented Petri net (OOCPN). The OOCPN model takes in digitalized current inputs as fault signatures, and dynamical transitions between discrete switching states of a circuit with broken device are symbolized with the dynamical transitions of colored tokens in OOCPN. Such transitions simulate natural reasoning process of an expert’s brain during diagnosis. The dependence on component parameters and on circuit layouts is finally eliminated by such circuit topology reasoning process. In the last part, the proposed online reasoning and diagnosis process is exemplified with the case of a certain switching device failure in the power circuit of traction converter.
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Ding, Xiao Jun, En Dian Hu, Shi Gao Hu, and Tao Zhao. "Switched Reluctance Drive System Design Based on DSP." Applied Mechanics and Materials 577 (July 2014): 401–7. http://dx.doi.org/10.4028/www.scientific.net/amm.577.401.
Повний текст джерелаАнотація:
A switched reluctance motor drive (SRD) is designed in this paper. This system has the characteristics of simple structure and reliable performance. It is designed based on 3 phase, 12/8 pole, 2.2 KW switched reluctance motor (SRM). The TMS320LF2407A is chosen as the core controller. The type of half bridge is adopted in the main power converter circuit, and IGBT is used as the main power switching component and discrete components is used as the main power switch converter device driver circuit. Experimental results show that the designed system can be run steadily under rated load conditions. Moreover, the speed regulation of this system has satisfactory performance.
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Mejbri, Hanen, Kaiçar Ammous, Slim Abid, Hervé Morel, and Anis Ammous. "Bi-objective sizing optimization of power converter using genetic algorithms." COMPEL: The International Journal for Computation and Mathematics in Electrical and Electronic Engineering 33, no. 1/2 (December 20, 2013): 398–422. http://dx.doi.org/10.1108/compel-03-2012-0029.
Повний текст джерелаАнотація:
Purpose – This paper aims to focus on the trade-off between losses and converter cost. Design/methodology/approach – The continual development of power electronic converters, for a wide range of applications such as renewable energy systems (interfacing photovoltaic panels via power converters), is characterized by the requirements for higher efficiency and lower production costs. To achieve such challenging objectives, a computer-aided design optimization based on genetic algorithms is developed in Matlab environment. The elitist non-dominated sorting genetic algorithm is used to perform search and optimization, whereas averaged models are used to estimate power losses in different semiconductors devices. The design problem requires minimizing the losses and cost of the boost converter under electrical constraints. The optimization variables are, as for them, the switching frequency, the boost inductor, the DC capacitor and the types of semiconductor devices (IGBT and MOSFET). It should be pointed out that boost topology is considered in this paper but the proposed methodology is easily applicable to other topologies. Findings – The results show that such design methodology for DC-DC converters presents several advantages. In particular, it proposes to the designer a set of solutions – as an alternative of a single one – so that the authors can choose a posteriori the adequate solution for the application under consideration. This then allows the possibility of finding the best design among all the available choices. Furthermore, the design values for the selected solution were obtainable components. Originality/value – The authors focus on the general aspect of the discrete optimization approach proposed here. It can also be used by power electronics designers with the help of additional constraints in accordance with their specific applications. Furthermore, the use of such non-ideal average models with the multi-objective optimization is the original contribution of the paper and it has not been suggested so far.
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Tovbaev, A. N., M. Ibadullayev, and S. I. Norboyev. "Analysis of subharmonic oscillations in three-phase Ferroresonant circuits with bias." Journal of Physics: Conference Series 2388, no. 1 (December 1, 2022): 012060. http://dx.doi.org/10.1088/1742-6596/2388/1/012060.
Повний текст джерелаАнотація:
Abstract In the theory of nonlinear electrical circuits, the analysis of physical processes occurring in three-phase Ferroresonant circuits during excitation of subharmonic oscillations (SHO) of the second order is of particular importance in the design and creation of various converter devices. From the point of view of creating multi-phase secondary power sources (phase-discrete devices, frequency dividers, switching elements, automation and relay protection devices, etc.), the study of second-order SHO excitation in three-phase Ferro resonant circuits with bias is of greatest interest. The article deals with the excitation of second-order subharmonic oscillations in three-phase self-oscillatory circuits with common magnetic circuits with a bias winding. Shortened equations are derived using the averaging method with appropriate phases. From the condition for the existence of a periodic solution, the phase and amplitude relationships of the excited oscillations are determined, which are different from three-phase circuits with a separate ferromagnetic element. In the steady state, the conditions of excitation, the region of existence are determined depending on the parameters of the circuit, the bias current and the applied action. The stability of the solution of the original system of nonlinear differential equations of the second order is also studied by analyzing the roots of the characteristic equation by a qualitative method. Numerical realization of the initial considered system of equations described, self-oscillatory processes is given.
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Lisovenko, V., D. Lisovenko, and O. Bazyk. "LED MODULE WITH ELECTRONIC ILLUMINATION CONTROL." Collection of scientific works of Odesa Military Academy 1, no. 12 (December 27, 2019): 146–54. http://dx.doi.org/10.37129/2313-7509.2019.12.1.146-154.
Повний текст джерелаАнотація:
Many energy saving tasks can be solved thanks to the current advances in LED technology in the production of semiconductor light sources. Modern production of solid-state LEDs guarantees high-precision compliance with the calculated design parameters of illumination devices. This opens up wide opportunities for high-precision control of the lighting parameters of a multicomponent module: light power, a directional pattern and a distribution of illumination. Today, the methodical issues of the preliminary modeling of LED illumination devices with the given parameters are fundamentally solved. There is a shift from manual calculations to computer design and need to develop and select the most effective mathematical modeling methods. The paper presents a consistent approach to the modeling of the distribution of illumination on a horizontal plane from the planar LED module, based on the Lambert type of radiation of a single point source. Simple mathematical expressions, programmed on a personal computer, are obtained. The example of a 25-LED floodlight has shown the ability of dynamic control the lighting characteristics of the module. Connecting patterns of separate LEDs or their groups allow to change the direction pattern of the lamp by the appropriate way of switching diodes with different aperture of radiation. The lighting power can be controlled within the linearity of the ampere-brightness characteristics by changing the current strength through the LED. The static selection of characteristics is controlled by the geometry of the location of discrete sources. The formation of uniform illumination of the plane is graphically illustrated. The electron-dynamic way of controlling the lighting parameters of the LED floodlight is confirmed by the inventor’s certificate.
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Suroso, Suroso, Daru Tri Nugroho, Abdullah Nur Azis, and Toshihiko Noguchi. "Simplified five-level voltage source inverter with level-phase-shifted carriers based modulation technique." Indonesian Journal of Electrical Engineering and Computer Science 13, no. 2 (February 1, 2019): 461. http://dx.doi.org/10.11591/ijeecs.v13.i2.pp461-468.
Повний текст джерелаАнотація:
<p>A simplified circuit topology of the five-level pulse width modulation (PWM) inverter for DC-AC power conversion with no-isolated DC voltage sources and reduced switching device number is presented in this paper. The inverter circuit is based on the three-level H-bridge inverter configuration. The developed five-level inverter needs only five controlled power switches and four isolated gate drive circuits. Furthermore, the proposed topology does not require bidirectional power semiconductor controlled switches, hence a conventional discrete power MOSFETs or IGBTs can be used to build the inverter circuits. To obtain a better quality output voltage waveform, the level-phase-shifted carriers based sinusoidal pulse width modulation control was applied to produce a five-level PWM voltage waveform. The proposed inverter circuit was examined by using computer simulation with Power PSIM software. The basic principle operation of the inverter circuit was verified experimentally in laboratory using two non-isolated DC voltage sources as the inputs of the inverter’s prototype circuit. Some analysis of inverter’s output waveforms are provided and discussed. <em></em></p>
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Wang, Lei, Hongjun Zhang, Hui Hu, Liping Hao, and Wei Xu. "Research on real time simulation modeling method of large scale MMC electromagnetic transient." Journal of Physics: Conference Series 2108, no. 1 (November 1, 2021): 012030. http://dx.doi.org/10.1088/1742-6596/2108/1/012030.
Повний текст джерелаАнотація:
Abstract Modular multilevel converter (MMC) contains a large number of power electronic switching devices. The modeling method based on switching circuit model needs a lot of resources and the simulation speed is slow, so it is difficult to realize large-scale real-time simulation of electromagnetic transient. A MMC electromagnetic transient numerical modeling method based on ideal transformer model (ITM) is presented. Firstly, the MMC system is divided into the main circuit network and the sub module group network by ITM method, and the error caused by decoupling delay in serial and parallel real time simulation is compensated respectively by interpolation prediction and advanced interpolation prediction. Secondly, the capacitor in sub module is discreted respectively by trapezoidal integration method, backward Euler method and Gear-2 method. Based on the above numerical integration, the difference equations of capacitance voltage, capacitance current and output voltage of half bridge and full bridge sub modules are derived. Then, in order to improve the calculation speed, a simplified numerical model of half bridge and full bridge sub module based on switching function is proposed. Finally, the MMC based on switching circuit model runs off-line simulation in the simulation software, and the above MMC numerical modeling method runs real-time simulation in Speedgoat real-time simulator. The off-line and real-time simulation results of the MMC numerical modeling method and the switching circuit model are compared. And the simulation results verify the feasibility and effectiveness of the above MMC numerical modeling method in real time simulation.
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Wang, Xue. "Active-reactive power collaborative optimization model of electrical interconnection system based on deep learning under the goal of “carbon neutrality”." Journal of Physics: Conference Series 2360, no. 1 (November 1, 2022): 012032. http://dx.doi.org/10.1088/1742-6596/2360/1/012032.
Повний текст джерелаАнотація:
With the goal of carbon neutralization put forward, new energy units have gradually become the main power supply, and its volatility has brought great challenges to the control and optimization of the system, especially the distribution network. In order to solve the reactive power problem caused by the high proportion of renewable energy connected to the distribution network, a source network load storage centralized optimal dispatching model considering reactive power optimization and multi energy collaborative interaction is proposed. The model aims at the optimal operation cost, minimum network loss and minimum carbon emission of the multi energy system, and considers reactive power compensation, energy storage regulation and energy conversion, so as to realize the safe and low-carbon economic dispatching of the electrical interconnection system. The switching capacity of the discrete reactive power compensation device is linearized, and the model is transformed into a mixed integer second-order cone programming problem for solution. The simulation results show that the proposed method can effectively compensate the reactive power required by the wind turbine parallel network, coordinate the energy interaction between electricity and gas, and improve the stability and flexibility of the distribution network after large-scale renewable energy access, According to the charging and discharging power and charge state, and the automatic adjustment of the gears of on load voltage regulating transformer and compensation capacitor bank, this paper shows that the system has safe and stable operation performance.
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Pirozhenko, Andrii, Yevhenii Modlo, Ruslan Shaida, Viktor Batarieiev, Mykola Zhukov, and Mykhailo Drukker. "Principle of Organization for Laboratory Stand of the Electric Drive with a Real Regulatory System No Time Scaling." SHS Web of Conferences 100 (2021): 06002. http://dx.doi.org/10.1051/shsconf/202110006002.
Повний текст джерелаАнотація:
The existing practical training of specialists in the field of the electric drive is recognized as insufficient, not allowing them to conduct independently a complex of adjustment works or works on elimination of refusals. All known virtual methods of research of electric drives are scaled in time therefore at the trained skills on use of the measuring and registering devices during the work on real installation don't develop, and also skills on work with real knots of control systems for control of the set drive modes. We propose a stand consisting of a real system of regulation and the model of the power drive to work without time scale, thus significantly closer to the actual laboratory setting drive. The structure of the laboratory stand on the basis of the engine of a direct current of independent excitement with the reversible thyristor converter is in details considered. It is proved that an optimal algorithm for the simulation of three-phase bridge converter operating at anchor chain is an algorithm which rooms include a thyristor and of the remaining thyristors allows you to choose the design scheme and carry out the integration of equations describing electric processes in the circuit detect a change in state of the thyristors and the transition to other design scheme. Given the discrete model and considered design scheme of three-phase bridge Converter in a normal mode switching thyristors and emergency mode, if false turn on of the thyristor during commutation. Mathematical model of the device - the solution of differential equations by numerical integration of the Runge-Kutta. Proposed hardware mathematical model based on the family of microcomputer ARM СortexTM fourth generation.
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Fairchild, M. Ray, Carl W. Berlin, D. H. R. Sarma, Ralph S. Taylor, Han S. Lee, and Steven E. Staller. "Thin-film High Voltage Capacitors for Hybrid Electric Vehicle Inverter Applications." International Symposium on Microelectronics 2012, no. 1 (January 1, 2012): 001116–23. http://dx.doi.org/10.4071/isom-2012-thp34.
Повний текст джерелаАнотація:
The propulsion system in hybrid electric vehicles (HEVs) requires an alternating current (AC) electric motor in combination with an internal combustion engine. When the HEV is being propelled by the AC motor, the power for the motor is provided by batteries whose direct current (DC) voltage is chopped into an AC waveform via an electronic device called a power inverter. Capacitors known as DC bulk capacitors are placed between the battery and the inverter to “decouple” the AC switching inverter from the power source. Power electronics inverters use several large high voltage discrete DC bulk capacitors, which negatively influence the inverter's size, weight and are a high cost item in the assembly. The use of a high dielectric constant (Dk) ferroelectric material enables smaller, higher temperature capable, lower-cost power capacitors. Ceramic ferroelectrics, such as (Pb,La)(Zr,Ti)O3 [PLZT], offer the highest dielectric constants. Argonne National Laboratory is developing a novel film-on-foil technology for high-power capacitors utilizing PLZT. These capacitors, with an increasing dielectric constant with temperature, low equivalent series resistance and a benign failure mode, are well suited for power applications. The PLZT is deposited onto a metal foil via a chemical deposition process and the top electrode metal (Pt or Al) is then deposited by electron beam evaporation onto the top surface of the dielectric thus creating the capacitor. This project involved the fabrication and electrical evaluation of film-on-foil capacitors for HEV inverter applications. Capacitors utilizing both nickel and platinum-on-silicon as the base substrate, and PLZT as the dielectric material were fabricated. These capacitors were tested for dielectric integrity, capacitance, voltage breakdown, and benign failure mode. Results from these mechanical and electrical evaluation tests will be presented. Key processing challenges and implementation methods will also be described.
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Hui, S. Y. R., and S. Morrall. "Generalised associated discrete circuit model for switching devices." IEE Proceedings - Science, Measurement and Technology 141, no. 1 (January 1, 1994): 57–64. http://dx.doi.org/10.1049/ip-smt:19949591.
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Cheng, H.-C., Y.-H. Shen, and W.-H. Chen. "Parasitic extraction and power loss estimation of power devices." Journal of Mechanics 37 (December 19, 2020): 134–48. http://dx.doi.org/10.1093/jom/ufaa022.
Повний текст джерелаАнотація:
Abstract This study aims to characterize the switching transients and power losses of silicon (Si) power metal–oxide–semiconductor field-effect transistor (MOSFET) in an SOT-227 package (hereinafter named “power MOSFET package”) and Si power MOSFET-based three-phase MOSFET inverter during load cycles through numerical modeling and experimental validation. The three-phase inverter comprises six power MOSFET packages as switches for brushless direct current motor drive. First of all, three-dimensional electromagnetic analyses are performed to extract the parasitic parameters of these two power devices. Subsequently, the device model and the previously derived package model of the power MOSFET are combined together in circuit simulation of a double pulse test (DPT). The calculated waveform profiles and switching times are compared with those obtained from the DPT experiment. Likewise, an effective compact circuit simulation model of the three-phase six-switch inverter, considering the parasitic effects, is developed for the switching loss estimation in the first switching interval of the six-step switching sequence. At last, parametric study is performed to explore, respectively, the influences of some crucial factors on the parasitic inductances and switching transients of the power MOSFET package and the switching losses of the three-phase inverter.
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Kang, Ey Goo. "A Study on 400V Sized Trench Power Semiconductor for Smart Power ICs." Advanced Materials Research 712-715 (June 2013): 1771–74. http://dx.doi.org/10.4028/www.scientific.net/amr.712-715.1771.
Повний текст джерелаАнотація:
Power MOSFET is develop in power savings, high efficiency, small size, high reliability, fast switching, low noise. Power MOSFET can be used high-speed switching transistors devices. Recently attention to the motor and the application of various technologies. Power MOSFET is devices the voltage-driven approach switching devices are design to handle on large power, power supplies, converters, motor controllers. In this paper, design the 400 V Planar type, and design the trench type for realization of low on-resistance. Trench Power MOSFET Vth : 3.25 V BV : 484 V Ron : 0.0395 Ohm has been optimized.
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Chow, T. Paul. "SiC Bipolar Power Devices." MRS Bulletin 30, no. 4 (April 2005): 299–304. http://dx.doi.org/10.1557/mrs2005.77.
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AbstractThe successful commercialization of unipolar Schottky rectifiers in the 4H polytype of silicon carbide has resulted in a market demand for SiC high-power switching devices. This article reviews recent progress in the development of high-voltage 4H-SiC bipolar power electronics devices.We also present the outstanding material and processing challenges, reliability concerns, and future trends in device commercialization.
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Hikita, Masahiro, Hiroaki Ueno, Hisayoshi Matsuo, Tetsuzo Ueda, Yasuhiro Uemoto, Kaoru Inoue, Tsuyoshi Tanaka, and Daisuke Ueda. "Status of GaN-Based Power Switching Devices." Materials Science Forum 600-603 (September 2008): 1257–62. http://dx.doi.org/10.4028/www.scientific.net/msf.600-603.1257.
Повний текст джерелаАнотація:
State-of-the-art technologies of GaN-based power switching transistors are reviewed, in which normally-off operation and heat spreading as technical issues. We demonstrate a new operation principle of GaN-based normally-off transistor called Gate Injection Transistor (GIT). The GIT utilizes hole-injection from p-AlGaN to AlGaN/GaN hetero-junction which increases electron density in the depleted channel resulting in dramatic increase of the drain current owing to conductivity modulation. The fabricated GIT on Si substrate exhibits the threshold voltage of +1.0V with high maximum drain current of 200mA/mm. The obtained on-state resistance (Ron·A) and off-state breakdown voltage (BVds) are 2.6mΩ·cm2 and 800V, respectively. These values are the best ones ever reported for GaN-based normally-off transistors. In addition, we propose the use of poly-AlN as surface passivation. The AlN has at least 200 times higher thermal conductivity than conventional SiN so that it can effectively reduce the channel temperature.
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Rabkowski, Jacek. "SiC Power Devices in Impedance Source Converters." Materials Science Forum 897 (May 2017): 701–4. http://dx.doi.org/10.4028/www.scientific.net/msf.897.701.
Повний текст джерелаАнотація:
This paper discusses issues related to application of SiC power devices to new family of power converters. Impedance source converters show unique feature, buck boost characteristics due to specific impedance network. Passive elements of this network may be seriously reduced with the switching frequency increase, possible with fast-switching SiC transistors. On the other hand, switching conditions of the power devices are more severe than in traditional voltage-source or current-source converters. These issues are discussed on the base of the 6kVA/100kHz quasi-Z-source inverter example.
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Ma, Chao-Tsung, and Zhen-Huang Gu. "Review on Driving Circuits for Wide-Bandgap Semiconductor Switching Devices for Mid- to High-Power Applications." Micromachines 12, no. 1 (January 8, 2021): 65. http://dx.doi.org/10.3390/mi12010065.
Повний текст джерелаАнотація:
Wide-bandgap (WBG) material-based switching devices such as gallium nitride (GaN) high electron mobility transistors (HEMTs) and silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) are considered very promising candidates for replacing conventional silicon (Si) MOSFETs for various advanced power conversion applications, mainly because of their capabilities of higher switching frequencies with less switching and conduction losses. However, to make the most of their advantages, it is crucial to understand the intrinsic differences between WBG- and Si-based switching devices and investigate effective means to safely, efficiently, and reliably utilize the WBG devices. This paper aims to provide engineers in the power engineering field a comprehensive understanding of WBG switching devices’ driving requirements, especially for mid- to high-power applications. First, the characteristics and operating principles of WBG switching devices and their commercial products within specific voltage ranges are explored. Next, considerations regarding the design of driving circuits for WBG switching devices are addressed, and commercial drivers designed for WBG switching devices are explored. Lastly, a review on typical papers concerning driving technologies for WBG switching devices in mid- to high-power applications is presented.
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Ma, Chao-Tsung, and Zhen-Huang Gu. "Review on Driving Circuits for Wide-Bandgap Semiconductor Switching Devices for Mid- to High-Power Applications." Micromachines 12, no. 1 (January 8, 2021): 65. http://dx.doi.org/10.3390/mi12010065.
Повний текст джерелаАнотація:
Wide-bandgap (WBG) material-based switching devices such as gallium nitride (GaN) high electron mobility transistors (HEMTs) and silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) are considered very promising candidates for replacing conventional silicon (Si) MOSFETs for various advanced power conversion applications, mainly because of their capabilities of higher switching frequencies with less switching and conduction losses. However, to make the most of their advantages, it is crucial to understand the intrinsic differences between WBG- and Si-based switching devices and investigate effective means to safely, efficiently, and reliably utilize the WBG devices. This paper aims to provide engineers in the power engineering field a comprehensive understanding of WBG switching devices’ driving requirements, especially for mid- to high-power applications. First, the characteristics and operating principles of WBG switching devices and their commercial products within specific voltage ranges are explored. Next, considerations regarding the design of driving circuits for WBG switching devices are addressed, and commercial drivers designed for WBG switching devices are explored. Lastly, a review on typical papers concerning driving technologies for WBG switching devices in mid- to high-power applications is presented.
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Ivakhno, Volodymyr, Volodymyr V. Zamaruiev, and Olga Ilina. "Estimation of Semiconductor Switching Losses under Hard Switching using Matlab/Simulink Subsystem." Electrical, Control and Communication Engineering 2, no. 1 (April 1, 2013): 20–26. http://dx.doi.org/10.2478/ecce-2013-0003.
Повний текст джерелаАнотація:
AbstractThe conventional tools for the system level simulation of the switch-mode power converters (for example, MATLAB/SIMILINK) allow simulating the behavior of a power converter jointly operating with the control system in a closed automatic regulation system. This simulation tools either represent semiconductor devices as ideal switches or implement the simplest models based on volt-ampere characteristics of standard types of semiconductor devices for conducting loss estimation. This fact makes direct calculation of dynamic power losses in the semiconductor devices impossible. The MATLAB/SIMILINK subsystem that calculates the average power dissipated in the power switch during turn-on and turn-off transition is proposed in this paper. The represented approach used in the subsystem estimates by the means of MATLAB/SIMILINK the values of turn-on and turn-off energies at power switch commutation instances on the base of switching current and voltage measurements and the values of commutation energies given in datasheet on power switch. The simulation results of step-down converter with IGBT and proposed subsystem in MATLAB/SIMULINK were compared with the calculation results obtained in Semisel
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Chougale, Mahesh Y., Swapnil R. Patil, Sandeep P. Shinde, Sagar S. Khot, Akshay A. Patil, Atul C. Khot, Sourabh S. Chougule, Christos K. Volos, Sungjun Kim, and Tukaram D. Dongale. "Memristive switching in ionic liquid–based two-terminal discrete devices." Ionics 25, no. 11 (June 15, 2019): 5575–83. http://dx.doi.org/10.1007/s11581-019-03082-6.
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Chow, T. Paul. "SiC and GaN High-Voltage Power Switching Devices." Materials Science Forum 338-342 (May 2000): 1155–60. http://dx.doi.org/10.4028/www.scientific.net/msf.338-342.1155.
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Valentine, Nathan, Diganta Das, Bhanu Sood, and Michael Pecht. "Failure Analyses of Modern Power Semiconductor Switching Devices." International Symposium on Microelectronics 2015, no. 1 (October 1, 2015): 000690–95. http://dx.doi.org/10.4071/isom-2015-tha56.
Повний текст джерелаАнотація:
Power semiconductor switches such as Power Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) and Insulated Gate Bipolar Transistors (IGBTs) continue to be a leading cause of failure in power electronics systems. With the continued expansion of the power electronics market, reliable switching devices are of utmost importance in maintaining reliable operation of high power electronic systems. An overview of the failure mechanisms of power semiconductor switches identified by two failure analyses at CALCE is presented. The specific applications of power semiconducting switches have a wide range and include semiconductors found in converters for AC/DC power supplies and home appliance motor control board. All observed failures were from devices which experienced a short circuit between the collector and emitter terminals. The causes of the failures are hypothesized to be a combination of manufacturing defects and poor thermal management.