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Статті в журналах з теми "Dielectrics and semiconductors"

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Автор: Grafiati

Опубліковано: 30 травня 2022

Оновлено: 31 травня 2022

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1

Kim, Yong-Wan, and Young-Geun Ha. "Organic-Inorganic Hybrid Gate Dielectrics Using Self-Assembled Multilayers For Low-Voltage Operating Thin-Film Transistors." Korean Journal of Metals and Materials 60, no. 3 (March 5, 2022): 220–26. http://dx.doi.org/10.3365/kjmm.2022.60.3.220.

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Advanced electronic materials have attracted great interest for their potential use in flexible, large-area, and printable electronic applications. However, fabricating high-performance low-voltage thin-film transistors (TFTs) for those applications with these advanced semiconductors is still challenging because of a lack of dielectric materials which satisfy both the required electrical and physical performance. In this work, we report self-assembled hybrid multilayer gate dielectrics prepared using a facile solution procedure to achieve organic semiconductor and amorphous oxide semiconductor-based thin-film transistors with ultralow operating voltage. These self-assembled hybrid multilayer gate dielectrics were constructed by iterative self-assembly of synthesized bifunctional phosphonic acid-based organic molecules and ultrathin high-k hafnium oxide layers. The novel self-assembled hybrid multilayer gate dielectrics exhibit excellent dielectric properties with exceptionally large capacitances (up to 815 nF/ cm2) and low-level leakage current densities of < 1.56 × 10-6 A/cm2, featureless morphology (RMS roughness < 0.24 nm), and thermal stability (up to 300 °C). Consequently, these hybrid gate dielectrics can be incorporated into thin-film transistors with pentacene as p-type organic semiconductors, and with indium oxide as n-type inorganic semiconductors. The resulting TFTs functioned at ultralow voltages (< ± 2 V) and achieved high transistor performances (hole mobility: 0.88 cm2 / V·s, electron mobility: 7.8 cm2 / V·s and on/off current ratio >104, and threshold voltage: ± 0.5 V).

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2

Himpsel, F. J., U. O. Karlsson, F. R. McFeely, J. F. Morar, D. Rieger, A. Taleb-Ibrahimi, and J. A. Yarmoff. "Dielectrics on semiconductors." Materials Science and Engineering: B 1, no. 1 (August 1988): 9–13. http://dx.doi.org/10.1016/0921-5107(88)90025-6.

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3

Kim, Dae-Cheol, and Young-Geun Ha. "Self-Assembled Hybrid Gate Dielectrics for Ultralow Voltage of Organic Thin-Film Transistors." Journal of Nanoscience and Nanotechnology 21, no. 3 (March 1, 2021): 1761–65. http://dx.doi.org/10.1166/jnn.2021.19083.

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We developed self-assembled hybrid dielectric materials via a facile and low-temperature solution process. These dielectrics are used to facilitate ultralow operational voltage of organic thinfilm transistors. Self-assembly of bifunctional phosphonic acid and ultrathin hafnium oxide layers results in the self-assembled hybrid dielectrics. Additionally, the surface property of the top layer of hafnium oxide can be tuned by phosphonic acid-based self-assembled molecules to improve the function of the organic semiconductors. These novel hybrid dielectrics demonstrate great dielectric properties as low-level leakage current densities of <1.45×10−6 A/cm2, large capacitances (up to 800 nF/cm2), thermal stability (up to 300 °C), and featureless morphology (root-mean-square roughness ˜0.3 nm). As a result, self-assembled gate dielectrics can be incorporated into thin-film transistors with p-type organic semiconductors functioning at ultralow voltages (<-2 V) to achieve enhanced performance (hole mobility: 0.88 cm2/V·s, and Ion/Ioff: > 105, threshold voltage: 0.5 V).

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4

Droopad, R., M. Passlack, N. England, K. Rajagopalan, J. Abrokwah, and A. Kummel. "Gate dielectrics on compound semiconductors." Microelectronic Engineering 80 (June 2005): 138–45. http://dx.doi.org/10.1016/j.mee.2005.04.056.

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5

Kolchin, V. V., N. I. Barchukova, and E. M. Balashova. "Ceramic dielectrics, semiconductors, and superconductors." Glass and Ceramics 45, no. 4 (April 1988): 160–64. http://dx.doi.org/10.1007/bf00704510.

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6

Cheng, Ruoran, Chunli Zhang, Weiqiu Chen, and Jiashi Yang. "Temperature Effects on Mobile Charges in Extension of Composite Fibers of Piezoelectric Dielectrics and Non-Piezoelectric Semiconductors." International Journal of Applied Mechanics 11, no. 09 (November 2019): 1950088. http://dx.doi.org/10.1142/s1758825119500881.

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We study the redistribution of mobile charge carriers in a composite fiber of piezoelectric dielectrics and non-piezoelectric semiconductors in extensional deformation under a uniform temperature change. The macroscopic theory of piezoelectricity and the drift-diffusion theory of semiconductor are used, coupled by doping and mobile charges. A one-dimensional model for extension is developed. Through a theoretical analysis, it is shown that under a temperature change the mobile charges in the semiconductor redistribute themselves under the polarization and electric field produced through thermoelastic, pyroelectric and piezoelectric effects. The results suggest the possibility of using composite structures for thermally manipulating mobile charges in semiconductors and have potential applications in piezotronics.

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7

Dimoulas, Athanasios, Yerassimos Panayiotatos, Polychronis Tsipas, Sotiria Galata, Georgia Mavrou, Andreas Sotiropoulos, Chiara Marchiori, et al. "Gate Dielectrics for High Mobility Semiconductors." ECS Transactions 16, no. 5 (December 18, 2019): 295–306. http://dx.doi.org/10.1149/1.2981611.

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8

Yang, Allen Jian, Kun Han, Ke Huang, Chen Ye, Wen Wen, Ruixue Zhu, Rui Zhu та ін. "Van der Waals integration of high-κ perovskite oxides and two-dimensional semiconductors". Nature Electronics 5, № 4 (квітень 2022): 233–40. http://dx.doi.org/10.1038/s41928-022-00753-7.

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AbstractTwo-dimensional semiconductors can be used to build next-generation electronic devices with ultrascaled channel lengths. However, semiconductors need to be integrated with high-quality dielectrics—which are challenging to deposit. Here we show that single-crystal strontium titanate—a high-κ perovskite oxide—can be integrated with two-dimensional semiconductors using van der Waals forces. Strontium titanate thin films are grown on a sacrificial layer, lifted off and then transferred onto molybdenum disulfide and tungsten diselenide to make n-type and p-type transistors, respectively. The molybdenum disulfide transistors exhibit an on/off current ratio of 108 at a supply voltage of 1 V and a minimum subthreshold swing of 66 mV dec−1. We also show that the devices can be used to create low-power complementary metal–oxide–semiconductor inverter circuits.

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9

Kalytka, Valerii A., Mikhail V. Korovkin, Ali Dz Mekhtiev, and Aliya D. Alkina. "DETAILED ANALYSIS OF NONLINEAR DIELECTRIC LOSSES IN PROTON SEMICONDUCTORS AND DIELECTRICS." Bulletin of the Moscow State Regional University (Physics and Mathematics), no. 4 (2017): 39–54. http://dx.doi.org/10.18384/2310-7251-2017-4-39-54.

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10

Burdov, Vladimir A., and Mikhail I. Vasilevskiy. "Exciton-Photon Interactions in Semiconductor Nanocrystals: Radiative Transitions, Non-Radiative Processes and Environment Effects." Applied Sciences 11, no. 2 (January 6, 2021): 497. http://dx.doi.org/10.3390/app11020497.

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In this review, we discuss several fundamental processes taking place in semiconductor nanocrystals (quantum dots (QDs)) when their electron subsystem interacts with electromagnetic (EM) radiation. The physical phenomena of light emission and EM energy transfer from a QD exciton to other electronic systems such as neighbouring nanocrystals and polarisable 3D (semi-infinite dielectric or metal) and 2D (graphene) materials are considered. In particular, emission decay and FRET rates near a plane interface between two dielectrics or a dielectric and a metal are discussed and their dependence upon relevant parameters is demonstrated. The cases of direct (II–VI) and indirect (silicon) band gap semiconductors are compared. We cover the relevant non-radiative mechanisms such as the Auger process, electron capture on dangling bonds and interaction with phonons. Some further effects, such as multiple exciton generation, are also discussed. The emphasis is on explaining the underlying physics and illustrating it with calculated and experimental results in a comprehensive, tutorial manner.

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11

Kim, Hyunho, Adrees Arbab, Benji Fenech-Salerno, Chengning Yao, Ryan Macpherson, Jong Min Kim, and Felice Torrisi. "Barium titanate-enhanced hexagonal boron nitride inks for printable high-performance dielectrics." Nanotechnology 33, no. 21 (March 4, 2022): 215704. http://dx.doi.org/10.1088/1361-6528/ac553f.

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Abstract Printed electronics have been attracting significant interest for their potential to enable flexible and wearable electronic applications. Together with printable semiconductors, solution-processed dielectric inks are key in enabling low-power and high-performance printed electronics. In the quest for suitable dielectrics inks, two-dimensional materials such as hexagonal boron nitride (h-BN) have emerged in the form of printable dielectrics. In this work, we report barium titanate (BaTiO3) nanoparticles as an effective additive for inkjet-printable h-BN inks. The resulting inkjet printed BaTiO3/h-BN thin films reach a dielectric constant (ε r) of ∼16 by adding 10% of BaTiO3 nanoparticles (in their volume fraction to the exfoliated h-BN flakes) in water-based inks. This result enabled all-inkjet printed flexible capacitors with C ∼ 10.39 nF cm−2, paving the way to future low power, printed and flexible electronics.

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12

Lee, Sangyun, Bonwon Koo, Jae-Geun Park, Hyunsik Moon, Jungseok Hahn, and Jong Min Kim. "Development of High-Performance Organic Thin-Film Transistors for Large-Area Displays." MRS Bulletin 31, no. 6 (June 2006): 455–59. http://dx.doi.org/10.1557/mrs2006.118.

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AbstractOrganic thin-film transistors (OTFTs) are considered indispensable in applications requiring flexibility, large area, low processing temperature, and low cost. Key challenges to be addressed include developing solution-processable gate dielectric materials that form uniform films over large areas and exhibit excellent insulating properties, reducing contact resistance at interfaces between organic semiconductors and electrodes, and optimizing the patterning of organic semiconductors. High-performance pentacene-based OTFTs have been reported with polymeric gate dielectrics and indium tin oxide source/drain electrodes. Using such OTFT backplates, a 15-in. 1024 X 768 pixel full-color active-matrix liquid-crystal display (AMLCD) and a 4.5-in. 192 X64 pixel active-matrix organic light-emitting diode (AMOLED) have been fabricated.

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13

Forouhi, A. R., and I. Bloomer. "Optical properties of crystalline semiconductors and dielectrics." Physical Review B 38, no. 3 (July 15, 1988): 1865–74. http://dx.doi.org/10.1103/physrevb.38.1865.

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14

Weiler, Sascha. "Laser Micro Processing of Semiconductors and Dielectrics." Laser Technik Journal 5, no. 1 (January 2008): 40–42. http://dx.doi.org/10.1002/latj.200790205.

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15

Adee, Sarah. "Winner: Semiconductors The Ultimate Dielectrics is ... Nothing." IEEE Spectrum 45, no. 1 (2008): 39–42. http://dx.doi.org/10.1109/mspec.2008.4428312.

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16

Potapovich, Yu N., T. V. Panchenko, and G. V. Snezhnoi. "Automatic current spectroscopy of semiconductors and dielectrics." Measurement Techniques 35, no. 7 (July 1992): 850–53. http://dx.doi.org/10.1007/bf00977225.

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17

Timoshenko, V. Yu, V. Duzhko, and Th Dittrich. "Diffusion Photovoltage in Porous Semiconductors and Dielectrics." physica status solidi (a) 182, no. 1 (November 2000): 227–32. http://dx.doi.org/10.1002/1521-396x(200011)182:1<227::aid-pssa227>3.0.co;2-w.

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18

Jiang, Huihong, Zhuoting Huang, Guobiao Xue, Hongzheng Chen, and Hanying Li. "Electron transport at the interface of organic semiconductors and hydroxyl-containing dielectrics." Journal of Materials Chemistry C 6, no. 44 (2018): 12001–5. http://dx.doi.org/10.1039/c8tc01343h.

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19

Besar, Kalpana, Jennifer Dailey, Xingang Zhao, and Howard E. Katz. "A flexible organic inverter made from printable materials for synergistic ammonia sensing." Journal of Materials Chemistry C 5, no. 26 (2017): 6506–11. http://dx.doi.org/10.1039/c7tc01377a.

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20

Wang, Rixuan, Joonjung Lee, Jisu Hong, Hyeok-jin Kwon, Heqing Ye, Juhyun Park, Chan Eon Park, et al. "Mass-Synthesized Solution-Processable Polyimide Gate Dielectrics for Electrically Stable Operating OFETs and Integrated Circuits." Polymers 13, no. 21 (October 28, 2021): 3715. http://dx.doi.org/10.3390/polym13213715.

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Polyimides (PIs) are widely utilized polymeric materials for high-temperature plastics, adhesives, dielectrics, nonlinear optical materials, flexible hard-coating films, and substrates for flexible electronics. PIs can be facilely mass-produced through factory methods, so the industrial application value is limitless. Herein, we synthesized a typical poly(amic acid) (PAA) precursor-based solution through an industrialized reactor for mass production and applied the prepared solution to form thin films of PI using thermal imidization. The deposited PI thin films were successfully applied as gate dielectrics for organic field-effect transistors (OFETs). The PI layers showed suitable characteristics for dielectrics, such as a smooth surface, low leakage current density, uniform dielectric constant (k) values regardless of frequency, and compatibility with organic semiconductors. Utilizing this PI layer, we were able to fabricate electrically stable operated OFETs, which exhibited a threshold voltage shift lower than 1 V under bias-stress conditions and a field-effect mobility of 4.29 cm2 V−1 s−1. Moreover, integrated logic gates were manufactured using these well-operated OFETs and displayed suitable operation behavior.

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21

Setera, Brett, and Aristos Christou. "Challenges of Overcoming Defects in Wide Bandgap Semiconductor Power Electronics." Electronics 11, no. 1 (December 22, 2021): 10. http://dx.doi.org/10.3390/electronics11010010.

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Анотація:

The role of crystal defects in wide bandgap semiconductors and dielectrics under extreme environments (high temperature, high electric and magnetic fields, intense radiation, and mechanical stresses) found in power electronics is reviewed. Understanding defects requires real-time in situ material characterization during material synthesis and when the material is subjected to extreme environmental stress. Wide bandgap semiconductor devices are reviewed from the point of view of the role of defects and their impact on performance. It is shown that the reduction of defects represents a fundamental breakthrough that will enable wide bandgap (WBG) semiconductors to reach full potential. The main emphasis of the present review is to understand defect dynamics in WBG semiconductor bulk and at interfaces during the material synthesis and when subjected to extreme environments. High-brightness X-rays from synchrotron sources and advanced electron microscopy techniques are used for atomic-level material probing to understand and optimize the genesis and movement of crystal defects during material synthesis and extreme environmental stress. Strongly linked multi-scale modeling provides a deeper understanding of defect formation and defect dynamics in extreme environments.

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22

Foygel, M., A. G. Petukhov, and A. S. Andreyev. "Bipolaron ac conductivity in amorphous semiconductors and dielectrics." Physical Review B 48, no. 23 (December 15, 1993): 17018–30. http://dx.doi.org/10.1103/physrevb.48.17018.

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23

Chelibanov, V. P., and A. M. Polubotko. "Main regularities of SERS on semiconductors and dielectrics." Chemical Physics Letters 697 (April 2018): 23–28. http://dx.doi.org/10.1016/j.cplett.2018.02.057.

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24

Casalini, Stefano, Carlo Augusto Bortolotti, Francesca Leonardi, and Fabio Biscarini. "Self-assembled monolayers in organic electronics." Chemical Society Reviews 46, no. 1 (2017): 40–71. http://dx.doi.org/10.1039/c6cs00509h.

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25

Katz, Howard E., Christian Kloc, Vikram Sundar, Jana Zaumseil, Alejandro L. Briseno, and Zhenan Bao. "Field-effect transistors made from macroscopic single crystals of tetracene and related semiconductors on polymer dielectrics." Journal of Materials Research 19, no. 7 (July 2004): 1995–98. http://dx.doi.org/10.1557/jmr.2004.0254.

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Анотація:

We report properties of devices made by the adhesion of semiconductor crystals, including several tetracene specimens, to polymer gate dielectrics along with measurements of tetracene crystals on conventional Si/SiO2 dielectric surfaces. For the best tetracene, pentacene, and alpha-6T devices, mobilities exceeding 0.1 cm2/V were measured, correlating well with expectations based on the literature, and in the case of tetracene and alpha-6T, exceeding the thin film mobility value. The devices were prepared in the open laboratory using simpler crystal handling techniques than had been thought necessary.

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26

Oberdorfer, Christian, and Guido Schmitz. "On the Field Evaporation Behavior of Dielectric Materials in Three-Dimensional Atom Probe: A Numeric Simulation." Microscopy and Microanalysis 17, no. 1 (October 1, 2010): 15–25. http://dx.doi.org/10.1017/s1431927610093888.

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AbstractAs a major improvement in three-dimensional (3D) atom probe, the range of applicable material classes has recently been broadened by the establishment of laser-assisted atom probes (LA-3DAP). Meanwhile, measurements of materials of low conductivity, such as dielectrics, ceramics, and semiconductors, have widely been demonstrated. However, besides different evaporation probabilities, heterogeneous dielectric properties are expected to give rise to additional artifacts in the 3D volume reconstruction on which the method is based. In this article, these conceivable artifacts are discussed based on a numeric simulation of the field evaporation. Sample tips of layer- or precipitate-type geometry are considered. It is demonstrated that dielectric materials tend to behave similarly to metals of reduced critical evaporation field.

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27

Krupka, Jerzy. "Microwave Measurements of Electromagnetic Properties of Materials." Materials 14, no. 17 (September 6, 2021): 5097. http://dx.doi.org/10.3390/ma14175097.

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A review of measurement methods of the basic electromagnetic parameters of materials at microwave frequencies is presented. Materials under study include dielectrics, semiconductors, conductors, superconductors, and ferrites. Measurement methods of the complex permittivity, the complex permeability tensor, and the complex conductivity and related parameters, such as resistivity, the sheet resistance, and the ferromagnetic linewidth are considered. For dielectrics and ferrites, the knowledge of their complex permittivity and the complex permeability at microwave frequencies is of practical interest. Microwave measurements allow contactless measurements of their resistivity, conductivity, and sheet resistance. These days contactless conductivity measurements have become more and more important, due to the progress in materials technology and the development of new materials intended for the electronic industry such as graphene, GaN, and SiC. Some of these materials, such as GaN and SiC are not measurable with the four-point probe technique, even if they are conducting. Measurement fixtures that are described in this paper include sections of transmission lines, resonance cavities, and dielectric resonators.

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28

Mastellone, Matteo, Maria Lucia Pace, Mariangela Curcio, Nicola Caggiano, Angela De Bonis, Roberto Teghil, Patrizia Dolce, et al. "LIPSS Applied to Wide Bandgap Semiconductors and Dielectrics: Assessment and Future Perspectives." Materials 15, no. 4 (February 13, 2022): 1378. http://dx.doi.org/10.3390/ma15041378.

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With the aim of presenting the processes governing the Laser-Induced Periodic Surface Structures (LIPSS), its main theoretical models have been reported. More emphasis is given to those suitable for clarifying the experimental structures observed on the surface of wide bandgap semiconductors (WBS) and dielectric materials. The role played by radiation surface electromagnetic waves as well as Surface Plasmon Polaritons in determining both Low and High Spatial Frequency LIPSS is briefly discussed, together with some experimental evidence. Non-conventional techniques for LIPSS formation are concisely introduced to point out the high technical possibility of enhancing the homogeneity of surface structures as well as tuning the electronic properties driven by point defects induced in WBS. Among these, double- or multiple-fs-pulse irradiations are shown to be suitable for providing further insight into the LIPSS process together with fine control on the formed surface structures. Modifications occurring by LIPSS on surfaces of WBS and dielectrics display high potentialities for their cross-cutting technological features and wide applications in which the main surface and electronic properties can be engineered. By these assessments, the employment of such nanostructured materials in innovative devices could be envisaged.

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29

Strandjord, Andrew, Thorsten Teutsch, Axel Scheffler, Bernd Otto, Anna Paat, Oscar Alinabon, and Jing Li. "Wafer Level Packaging of Compound Semiconductors." Journal of Microelectronics and Electronic Packaging 7, no. 3 (July 1, 2010): 152–59. http://dx.doi.org/10.4071/imaps.263.

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The microelectronics industry has implemented a number of different wafer level packaging (WLP) technologies for high volume manufacturing, including: UBM deposition, solder bumping, wafer thinning, and dicing. These technologies were successfully developed and implemented at a number of contract manufacturing companies, and then licensed to many of the semiconductor manufacturers and foundries. The largest production volumes for these technologies are for silicon-based semiconductors. Continuous improvements and modifications to these WLP processes have made them compatible with the changes observed over the years in silicon semiconductor technologies. These industry changes include: the move from aluminum to copper interconnect metallurgy, increases in wafer size, decreases in pad pitch, and the use of Low-K dielectrics. In contrast, the direct transfer of these WLP technologies to compound semiconductor devices, like GaAs, SiC, InP, GaN, and sapphire; has been limited due to a number of technical compatibility issues, several perceived compatibility issues, and some business concerns From a technical standpoint, many compound semiconductor devices contain fragile air bridges, gold bond pads, topographical cavities and trenches, and have a number of unique bulk material properties which are sensitive to the mechanical and chemical processes associated with the standard WLP operations used for silicon wafers. In addition, most of the newer contract manufacturing companies and foundries have implemented mostly 200 and 300 mm wafer capabilities into their facilities. This limits the number of places that one can outsource the processing of 100 and 150 mm compound semiconductor wafers. Companies that are processing large numbers of silicon based semiconductor wafers at their facilities are reluctant to process many of these compound semiconductors because there is a perceived risk of cross contamination between the different wafer materials. Companies are not willing to risk their current business of processing silicon wafers by introducing these new materials into existing process flows. From a business perspective, many companies are reluctant to take the liability risks associated with some of the very high-value compound semiconductors. In addition, the volumes for many of the compound semiconductor devices are very small compared with silicon based devices, thus making it hard to justify interruption in the silicon wafer flows to accommodate these lower volume products. In spite of these issues and perceptions, the markets for compound semiconductors are expanding. Several high profile examples include the increasing number of frequency and power management devices going into cell phones, light emitting diodes, and solar cells The strategy for the work described in this paper is to protect all structures and surfaces with either a spin-on resist or a laminated film during each step in the process flow. These layers will protect the wafer from mechanical and chemical damage, and at the same time protect the fab from contamination by the compound semiconductor.

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30

Gordienko, Yu Ye, S. Yu Larkin, Mykola I. Slipchenko, and Ye L. Shcherbak. "LOCAL MW HEATING-UP KINETICS IN SEMICONDUCTORS AND DIELECTRICS." Telecommunications and Radio Engineering 74, no. 9 (2015): 787–95. http://dx.doi.org/10.1615/telecomradeng.v74.i9.40.

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31

Forouhi, A. R., and I. Bloomer. "Optical dispersion relations for amorphous semiconductors and amorphous dielectrics." Physical Review B 34, no. 10 (November 15, 1986): 7018–26. http://dx.doi.org/10.1103/physrevb.34.7018.

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32

Bitukov, V. K., and V. A. Petrov. "Noncontact Temperature Measurement on Dielectrics and Semiconductors, Part 1." Russian Microelectronics 33, no. 6 (November 2004): 329–41. http://dx.doi.org/10.1023/b:rumi.0000046962.90122.d3.

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33

Golovan’, L. A., P. K. Kashkarov, and V. Yu Timoshenko. "Form birefringence in porous semiconductors and dielectrics: A review." Crystallography Reports 52, no. 4 (July 2007): 672–85. http://dx.doi.org/10.1134/s1063774507040153.

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34

Ma, T. P. "Electrical characterization of high-k gate dielectrics on semiconductors." Applied Surface Science 255, no. 3 (November 2008): 672–75. http://dx.doi.org/10.1016/j.apsusc.2008.07.010.

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35

Bitukov, V. K., and V. A. Petrov. "Noncontact temperature measurement on dielectrics and semiconductors, part 2." Russian Microelectronics 34, no. 1 (January 2005): 1–17. http://dx.doi.org/10.1007/s11180-005-0001-z.

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36

Apostolova, T. "Theoretical study of sub-to-picosecond laser pulse interaction with dielectrics, semiconductors and semiconductor heterostructures." Journal of Physics: Conference Series 113 (May 1, 2008): 012045. http://dx.doi.org/10.1088/1742-6596/113/1/012045.

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37

Sirotkin, O. S., R. O. Sirotkin, and A. M. Pavlova. "The ratio of chemical bond components in metals and nonmetals and their classification into conductors, semiconductors and dielectrics." IOP Conference Series: Earth and Environmental Science 990, no. 1 (February 1, 2022): 012036. http://dx.doi.org/10.1088/1755-1315/990/1/012036.

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Abstract The article considers the influence of chemical bond components (covalent character CC, metallic character CM and ionic character CI, in %) in homo- and heteronuclear substances and materials on their classification into classes of electrical conductivity: conductors, semiconductors and dielectrics. Consideration of the influence of the chemical bond type (via CC, CM, CI) on the nature of the electrical conductivity properties of homo- and hetero compounds and respective materials showed the influence of all three components of the chemical bond on it. As a result, it became possible to classify homonuclear compounds of elements by electrical properties into three groups of materials: conductors - CC < CM; semiconductors - CC ≍ or > CM; dielectrics - CC > CM. A good correlation of the ratio of these components with the values of their electrical resistivity, the width of the band gap and the type of conductivity was established. It was found that the increase in electrical conductivity in heteronuclear binary materials, in general, is determined by the growth of CM.

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38

Lopez, John, Florent Deloison, Anne Lidolff, Martin Delaigue, Clemens Hönninger, and Eric Mottay. "Comparison of Picosecond and Femtosecond Laser Ablation for Surface Engraving of Metals and Semiconductors." Key Engineering Materials 496 (December 2011): 61–66. http://dx.doi.org/10.4028/www.scientific.net/kem.496.61.

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Pico and femtosecond lasers present a growing interest for industrials applications such as surface structuring [1] or thin film selective ablation [2]. Indeed, they combine the unique capacity to process any type of material (dielectrics, semiconductors, metals) with an outstanding precision and a reduced affected zone. We report on results about surface engraving of metals (Al, Cu, Mo, Ni), semiconductor (Si) and polymer (PC) using a picosecond thin disk Yb:YAG-amplifier. The pulse duration of this source can be changed using two different configurations: direct amplification of a 34ps-oscillator on one hand, and 1ps-chirped pulse amplification (CPA) scheme on the other hand. The results obtained with this thin disk laser are compared to ones achieved with two commercial femtosecond lasers respectively based on Yb-doped crystals and fibers, and operating at similar output power levels (up to 15Watt).

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39

Kim, Se Hyun, Mi Jang, Jiye Kim, Harim Choi, Kyung-Youl Baek, Chan Eon Park, and Hoichang Yang. "Complementary photo and temperature cured polymer dielectrics with high-quality dielectric properties for organic semiconductors." Journal of Materials Chemistry 22, no. 37 (2012): 19940. http://dx.doi.org/10.1039/c2jm33203e.

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40

Romanov, S. G. "3-Dimensional Photonic Crystals at Optical Wavelengths." Journal of Nonlinear Optical Physics & Materials 07, no. 02 (June 1998): 181–200. http://dx.doi.org/10.1142/s0218863598000168.

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Different experimental strategies towards the 3-dimensional photonic crystals operating at optical wavelength are classified. The detailed discussion is devoted to the recent progress in photonic crystals fabricated by template method — the photonic band gap materials on the base of opal. The control of photonic properties of opal-based gratings is achieved through impregnating the opal with high refractive index semiconductors and dielectrics. Experimental study demonstrated the dependence of the stop band behaviour upon the type of impregnation (complete or partial) and showed a way for approaching complete photonic band gap. The photoluminescence from opal- semiconductor gratings revealed suppression of spontaneous emission in the gap region with following enhancement of the emission efficiency at the low-energy edge of the gap.

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41

Попович, К. П. "EXPERIMENTAL SETUP FOR STUDYING THERMOSTIMULATED CURRENTS IN SEMICONDUCTORS AND DIELECTRICS." Scientific Herald of Uzhhorod University.Series Physics 21 (August 5, 2007): 71–74. http://dx.doi.org/10.24144/2415-8038.2007.21.71-74.

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42

Pohl, Herbert, and Douglas Pohl. "Super-Dielectrics, Transducers, Semiconductors & Conductors via Giant Orbital Polymers." IEEE Electrical Insulation Magazine 2, no. 1 (January 1986): 18–19. http://dx.doi.org/10.1109/mei.1986.290558.

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43

Fomin, V. M., and E. P. Pokatilov. "Excitons in Periodic Structures with Homopolar Semiconductors and Anisotropic Dielectrics." physica status solidi (b) 128, no. 1 (March 1, 1985): 251–57. http://dx.doi.org/10.1002/pssb.2221280130.

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44

Quevedo-Lopez, M. A., W. T. Wondmagegn, H. N. Alshareef, R. Ramirez-Bon, and B. E. Gnade. "Thin Film Transistors for Flexible Electronics: Contacts, Dielectrics and Semiconductors." Journal of Nanoscience and Nanotechnology 11, no. 6 (June 1, 2011): 5532–38. http://dx.doi.org/10.1166/jnn.2011.3425.

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45

Malyshev, Victor, Angelina Gab, Dimitri Shakhnin, Cristina Donath, Elena Ionela Neacsu, Ana Maria Popescu, and Virgil Constantin. "High Temperature Ionic Liquids Electrosynthesis of Mo2C Protective Coatings on Diamond, Boron Nitride, Silicon and Boron Carbide." Revista de Chimie 69, no. 3 (April 15, 2018): 544–48. http://dx.doi.org/10.37358/rc.18.3.6145.

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On the basis of the thermodynamic analysis of the reactions of dielectrics and semiconductors with ionic melts, the systems suitable for an electrochemical synthesis from high temperature ionic liquids of films consisting in molybdenum carbide on the surfaces of these materials were selected. Then, the study of their electrochemical behavior was performed.

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46

Lin, Chen та Chiu. "Lossy Mode Resonance-Based Glucose Sensor with High-κ Dielectric Film". Crystals 9, № 9 (29 серпня 2019): 450. http://dx.doi.org/10.3390/cryst9090450.

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In the past, high-κ dielectrics gained much attention because of the constant demand for increasingly smaller semiconductors. At the same time, in the field of optical sensing, high-κ dielectrics are key materials. This study presents the experimental investigations on a lossy mode resonance-based optical planar waveguide (LMROPW) sensor coated with a high-κdielectric of an indium tin oxide (ITO) layer. Two types of sensing structures were fabricated by coating (i) only a single-layer ITO (or bared LMROPW) and (ii) an ITO layer with glucose probes onto the optical planar waveguide (or boronic LMROPW) to detect glucose molecules. The sensing characteristics of these two types of sensors toward the surrounding analyte were determined using different concentrations of glucose solutions. It was found that the bared LMROPW sensor is only suitable for a higher concentration of glucose; the boronic LMROPW sensor with glucose probes on ITO could be applied to a lower-concentration solution to monitor glucose adsorption onto the sensing surface. Furthermore, with the advantages of a simple structure, easy alignment, and suitable production, the LMROPW sensor with a high-κ dielectric surface could be applied in clinical testing and diagnostics.

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47

Lo Nigro, Raffaella, Patrick Fiorenza, Giuseppe Greco, Emanuela Schilirò, and Fabrizio Roccaforte. "Structural and Insulating Behaviour of High-Permittivity Binary Oxide Thin Films for Silicon Carbide and Gallium Nitride Electronic Devices." Materials 15, no. 3 (January 22, 2022): 830. http://dx.doi.org/10.3390/ma15030830.

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High-κ dielectrics are insulating materials with higher permittivity than silicon dioxide. These materials have already found application in microelectronics, mainly as gate insulators or passivating layers for silicon (Si) technology. However, since the last decade, the post-Si era began with the pervasive introduction of wide band gap (WBG) semiconductors, such as silicon carbide (SiC) and gallium nitride (GaN), which opened new perspectives for high-κ materials in these emerging technologies. In this context, aluminium and hafnium oxides (i.e., Al2O3, HfO2) and some rare earth oxides (e.g., CeO2, Gd2O3, Sc2O3) are promising high-κ binary oxides that can find application as gate dielectric layers in the next generation of high-power and high-frequency transistors based on SiC and GaN. This review paper gives a general overview of high-permittivity binary oxides thin films for post-Si electronic devices. In particular, focus is placed on high-κ binary oxides grown by atomic layer deposition on WBG semiconductors (silicon carbide and gallium nitride), as either amorphous or crystalline films. The impacts of deposition modes and pre- or postdeposition treatments are both discussed. Moreover, the dielectric behaviour of these films is also presented, and some examples of high-κ binary oxides applied to SiC and GaN transistors are reported. The potential advantages and the current limitations of these technologies are highlighted.

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48

Kalytka, Valeriy, Aleksandr Aliferov, Ali Mekhtiev, and Tat’yana Nikonova. "Mathematical description of quantum tunneling polarization in proton semiconductors and dielectrics." Proceedings of the Russian higher school Academy of sciences, no. 3 (October 25, 2018): 7–25. http://dx.doi.org/10.17212/1727-2769-2018-3-7-25.

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49

Chambers, Scott A. "Ferromagnetism in doped thin-film oxide and nitride semiconductors and dielectrics." Surface Science Reports 61, no. 8 (October 2006): 345–81. http://dx.doi.org/10.1016/j.surfrep.2006.05.001.

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50

Hamdouni, Yamen. "Quantum master equation approach to heat transport in dielectrics and semiconductors." Physica Scripta 96, no. 12 (November 2, 2021): 125022. http://dx.doi.org/10.1088/1402-4896/ac3201.

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