Статті в журналах: "Development of thin films"

1

Lee, Dong Nyung. "Texture Development in Thin Films." Materials Science Forum 408-412 (August 2002): 75–94. http://dx.doi.org/10.4028/www.scientific.net/msf.408-412.75.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

2

Knorr, D. B., D. P. Tracy, and T. M. Lu. "Texture Development in Thin Metallic Films." Textures and Microstructures 14 (1991): 543–54. http://dx.doi.org/10.1155/tsm.14-18.543.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

3

Gorman, Brian P., and Harlan U. Anderson. "Microstructure Development in Unsupported Thin Films." Journal of the American Ceramic Society 85, no. 4 (December 20, 2004): 981–85. http://dx.doi.org/10.1111/j.1151-2916.2002.tb00203.x.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

4

Thompson, Carl V., and Roland Carel. "Texture development in polycrystalline thin films." Materials Science and Engineering: B 32, no. 3 (July 1995): 211–19. http://dx.doi.org/10.1016/0921-5107(95)03011-5.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

5

Braz Fernandes, Francisco Manuel, Rui M. S. Martins, Norbert Schell, Karimbi Koosappa Mahesh, and Rui Jorge C. Silva. "Texture Development in Ni-Ti Thin Films." Advances in Science and Technology 59 (September 2008): 69–76. http://dx.doi.org/10.4028/www.scientific.net/ast.59.69.

Повний текст джерела

Анотація:

The Shape Memory Effect on Ni-Ti thin films is strongly dependent on several factors: (i) chemical composition of the matrix, (ii) presence of precipitates and (iii) preferential orientation. Ni-Ti alloys derive their unique nonlinear and anisotropic mechanical behavior from stress-induced martensitic transformations, where the resulting strains are affected by crystallographic orientation. The influence of the texture on the transformation characteristics of Ni-Ti thin films is discussed on the basis of models and experimental results of the literature. A brief review of the texture build-up on thin films obtained by different fabrication techniques (sputtering, melt spinning, diffusion treatment of ultra-fine laminates, …) is presented. Details about in situ techniques allowing the identification of the preferential orientation during the fabrication process are presented. The processing parameters that more strongly influence the preferential orientation of the Ni-Ti thin films are identified. The mechanisms for the different microstructures are summarized and a special emphasis is put on the type of preferential orientation and its evolution along the processing time.

Стилі APA, Harvard, Vancouver, ISO та ін.

6

HIRONAKA, Seiichiro. "Development of New Carbon Thin Films. Preparation and Application of Fullerene Thin Films." Journal of the Surface Finishing Society of Japan 47, no. 5 (1996): 419–21. http://dx.doi.org/10.4139/sfj.47.419.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

7

Laibowitz, Robert B. "High Tc Superconducting Thin Films." MRS Bulletin 14, no. 1 (January 1989): 58–62. http://dx.doi.org/10.1557/s0883769400053926.

Повний текст джерела

Анотація:

While high Tc superconductivity was first discovered in bulk material, it was apparent that thin films of these materials, particularly the compound YBa2Cu3O7-δ, would be of great interest to both science and technology. In this sense the development of these materials parallels a similar history in the low Tc materials. Initially, most of the low Tc materials of interest were single element metals such as Nb, Pb and Al in bulk form. Later work, mostly in magnets, led to the development of compounds or alloys of such metals as Nb-Sn, Nb-Ti, and many others. However, many physical and technological investigations required thin films with thicknesses in the range of 0.1-10μm. Microwave, infrared, and critical current studies are examples of some of the scientific uses of thin films. A few examples of the applications would include josephson junction-based digital computer circuits, SQUID (Superconducting Quantum Interference Devices), transmission lines, and interconnects and rf mixers. These studies are also of great interest in the high Tc materials. It is readily apparent that scientific and technological developments in superconductivity are closely interwoven.The high level of interest in thin films can be appreciated by observing that it was barely a few months after the announcement of superconductivity above 77 K that the first films of these complex, multi-element materials, superconducting at about 86 K were announced. These early efforts at thin film fabrication were generally accomplished using multi-element deposition techniques but subsequent development has seen many varieties of film fabrication techniques used quite successfully to fabricate high-quality films.

Стилі APA, Harvard, Vancouver, ISO та ін.

8

Headley, T. J., B. A. Tuttle, J. A. Voigt, and J. R. Michael. "Microstructural development in solution-derived PZT thin films." Proceedings, annual meeting, Electron Microscopy Society of America 52 (1994): 578–79. http://dx.doi.org/10.1017/s0424820100170621.

Повний текст джерела

Анотація:

Lead zirconate titanate (PZT) thin films are of technological interest for a variety of electronic and optical applications such as nonvolatile memories, decoupling capacitors, infrared detectors, and optical storage media. Fabrication of PZT films by solution deposition techniques is attractive because of uniform, stoichiometric control at the molecular level, ease of processing, and both low capital investment and total cost. Control of phase evolution, microstructure, crystallite size and orientation, and ferroelectric domain assemblage during processing is essential to optimize electrical and/or optical properties of the films. Factors which play a major role in controlling these parameters are details of the solution chemistry and mixing, thermal processing, Pb stoichiometry, Zr/Ti ratio, and substrate characteristics. Electron microscopy techniques have been used extensively to correlate microstructural features with film processing parameters as will be emphasized in this presentation.As annealing temperature is increased, phase evolution in PZT thin films typically proceeds from amorphous to pyrochlore to the ferroelectric perovskite phase. Fine-grained pyrochlore crystallizes from the amorphous film at low annealing temperatures and also precedes crystallization of the perovskite phase at higher temperatures. There is evidence that the Zr/Ti stoichiometry influences the microstructure of the amorphous-to-pyrochlore transformation.

Стилі APA, Harvard, Vancouver, ISO та ін.

9

Mele, Paolo, Shiv J. Singh, Shrikant Saini, Alok K. Jha, and Malik I. Adam. "Nanostructured Oxide Thin Films for Sustainable Development." Procedia Engineering 171 (2017): 201–6. http://dx.doi.org/10.1016/j.proeng.2017.01.327.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

10

Yamashita, Akira, Hiroshi Ohji, Tatsuya Fukami, and Kazuhiko Tsutsumi. "Development of High TCR Platinum Thin Films." IEEJ Transactions on Sensors and Micromachines 124, no. 7 (2004): 242–47. http://dx.doi.org/10.1541/ieejsmas.124.242.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

11

Okuyama, Masanori. "Recent Research Development of Ferroelectric Thin Films." IEEJ Transactions on Sensors and Micromachines 127, no. 12 (2007): 513–17. http://dx.doi.org/10.1541/ieejsmas.127.513.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

12

Bedenbecker, M., R. Bandorf, H. Luethje, G. Braeuer, and H. H. Gatzen. "Development and fabrication of magnetic thin films." Microsystem Technologies 12, no. 7 (February 21, 2006): 655–58. http://dx.doi.org/10.1007/s00542-006-0093-3.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

13

Ji, Nian Jing, Ke Gao Liu, and Zhong Quan Ma. "The Development of CZTS Thin Films for Solar Cells." Applied Mechanics and Materials 182-183 (June 2012): 237–40. http://dx.doi.org/10.4028/www.scientific.net/amm.182-183.237.

Повний текст джерела

Анотація:

CZTS thin film, a potential candidate for application as absorber layer in thin film solar cells, has drawn much attention in these years due to its excellent photoelectric performance and nontoxic components. It provides a brief description of the development of CZTS thin film for solar cells, and surveys several methods of depositing CZTS films, then introduces the crystal structure of CZTS which is a problem for composition ratio affecting the properties of CZTS thin films. Here we also outline the development and the structure of solar cells based on CZTS thin films.

Стилі APA, Harvard, Vancouver, ISO та ін.

14

Benzarti, Zohra, and Ali Khalfallah. "Recent Advances in the Development of Thin Films." Coatings 14, no. 7 (July 12, 2024): 878. http://dx.doi.org/10.3390/coatings14070878.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

15

Nashimoto, Keiichi, Michael J. Cima, Paul C. McIntyre, and Wendell E. Rhine. "Microstructure development of sol-gel derived epitaxial LiNbO3 thin films." Journal of Materials Research 10, no. 10 (October 1995): 2564–72. http://dx.doi.org/10.1557/jmr.1995.2564.

Повний текст джерела

Анотація:

Film growth and microstructural evolution were investigated for sol-gel derived LiNbO3 thin films deposited on lattice-matched single-crystal substrates. Epitaxial LiNbO3 films of about 100 nm nominal thickness were prepared by spin coating a solution of the lithium niobium ethoxide on sapphire (0001) substrates and annealing at 400 °C or 700 °C in a humidified oxygen atmosphere. These films exhibited an epitaxial relationship with the substrate of the type LiNbO3 (0001) || α-Al2O3 (0001) and LiNbO3 [100] || α-Al2O3 [100] as determined by x-ray pole figure analysis. Transmission electron microscopy indicated the epitaxial films annealed at 400 °C consisted of slightly misoriented ∼5 nm subgrains and of numerous ∼10 nm enclosed pores. The microstructure and orientation development of these films was consistent with a heteroepitaxial nucleation and growth mechanism, in which epitaxial nuclei form at the substrate surface and grow upward into an amorphous and porous intermediate film: Epitaxial films annealed at 700 °C contained larger 150-200 nm subgrains and pinholes. Misorientations between adjacent subgrains appeared to be significantly smaller in films annealed at 700 °C than those in films annealed at 400 °C. Hydrolysis of the alkoxide precursor solution prior to spin coating promoted the development of polycrystalline films on single-crystal sapphire substrates. Infrared spectra and thermal analysis indicated that, independent of the degree of the solution hydrolysis, nucleation of LiNbO3 was immediately preceded by decomposition of an amorphous carbonate intermediate phase.

Стилі APA, Harvard, Vancouver, ISO та ін.

16

Ishida, Akira, and Morio Sato. "Development of Polyimide/SMA Thin-Film Actuator." Materials Science Forum 654-656 (June 2010): 2075–78. http://dx.doi.org/10.4028/www.scientific.net/msf.654-656.2075.

Повний текст джерела

Анотація:

Ti-Ni-Cu shape memory alloy (SMA) thin films were sputter-deposited on heated polyimide substrates. The (Ni,Cu) rich Ti-Ni-Cu films deposited at a substrate temperature of 543 K were found to possess a high martensitic transformation temperature above room temperature over a wide range of Cu content from 7 to 23 at%, which allows stable production of actuators that operate at room temperature. Additional deposition of a Cu film onto the Ti-Ni-Cu films facilitated the soldering of wires onto the actuators and also decreased the power consumption and response time of the actuator. The force of a polyimide/Ti-Ni-Cu SMA actuator could be increased merely by increasing the thickness of the polyimide film. An actuator composed of a 125 m thick polyimide film and an 8 m thick TiNiCu film was able to lift a 13.5 g weight. Furthermore, a Ti-Ni-Cu film could be pattern etched on a polyimide film to produce a circuit. The results indicate that a polyimide/SMA film actuator is a promising simple actuator that can be produced by simply cutting out an appropriately shaped piece with scissors or by punching and then connecting the two edges to a battery by soldering.

Стилі APA, Harvard, Vancouver, ISO та ін.

17

Shanthi, D., A. Yogananthb, S. Anandhavelu, V. Balasubramanian, J. Suresh, S. A. Babu, and S. Sarveswaran. "Development of chitosan base PbBiS2 thin films for photovoltaic application." Chalcogenide Letters 19, no. 10 (October 25, 2022): 725–34. http://dx.doi.org/10.15251/cl.2022.1910.725.

Повний текст джерела

Анотація:

Novel poly-crystalline nature of chitosan (CS) based Lead Bismuth Sulphide (PbBiS2) thin films have been deposited at different deposition temperatures by chemical bath deposition (CBD), a lucid and low cost technique. Structural, optical and electrical properties of the films were investigated using X-ray diffraction (XRD), Energy dispersive analysis of X-ray (EDAX), Scanning Electron Microscopy (SEM), Spectrophotometry, Photoluminescence, Hall Effect and Current-Voltage (I-V) estimations. The films were identified to be polycrystalline with orthorhombic shape. The films exhibited a highly reflective surface with a metal appearance. The optical band differences on the films ranged from 2.22 to 1.97 eV. The negative nature of the Hall coefficients indicated that the majority of load-carrying materials were electrons. The intensity of the photo-luminescence emission was increased. Current-voltage measurements reported the semiconductor nature of the film. The prepared thin films are suitable for solar cell applications.

Стилі APA, Harvard, Vancouver, ISO та ін.

18

Katagiri, Hironori, Kotoe Saitoh, Tsukasa Washio, Hiroyuki Shinohara, Tomomi Kurumadani, and Shinsuke Miyajima. "Development of thin film solar cell based on Cu2ZnSnS4 thin films." Solar Energy Materials and Solar Cells 65, no. 1-4 (January 2001): 141–48. http://dx.doi.org/10.1016/s0927-0248(00)00088-x.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

19

Musgraves, J. David, B. G. Potter, and Timothy J. Boyle. "Nanostructure development in photodeposited, titania-based thin films." Journal of Materials Research 24, no. 11 (November 2009): 3372–79. http://dx.doi.org/10.1557/jmr.2009.0411.

Повний текст джерела

Анотація:

Ultraviolet irradiation (λ = 248 nm) was used to photocatalyze a solution of the heteroleptic titanium alkoxide (OPy)2Ti(TAP)2 [where OPy = pyridine carbinoxide and TAP = 2,4,6 tris(dimethylamino)phenoxide], leading to the deposition of a titania-based thin film only in the exposed region. The effect of water addition to the (OPy)2Ti(TAP)2 pyridine solution on the properties of the final photodeposited film structure was examined by using vibrational spectroscopy and electron microscopy. Under consistent optical exposure conditions, the amount of water added altered the nanoscale porosity of the final material produced. Films deposited from a solution with a 1:1 H2O/Ti content exhibited surface pores ∼100 nm in diameter, whereas a 4:1 ratio yielded 10-nm pores, and material produced from a 8:1 solution appeared fully condensed. In addition, the effect of postdeposition thermal treatments on the nanostructure and chemistry of the photodeposited films was examined.

Стилі APA, Harvard, Vancouver, ISO та ін.

20

Wang, Zhi Gang, Wen Cheng Gao, Jing Li, and Ke Gao Liu. "Development of SnS Thin Films for Solar Cells." Applied Mechanics and Materials 556-562 (May 2014): 278–81. http://dx.doi.org/10.4028/www.scientific.net/amm.556-562.278.

Повний текст джерела

Анотація:

SnS thin film, a potential earth-abundant photovoltaic material, has particularly generated interest because of its nontoxic nature, the band gap of it matches well with solar spectrum and its high absorption coefficient. It provides a brief description of the development of SnS thin film for solar cells, and surveys several preparation methods of SnS thin film, then introduces the crystal structure of SnS. The effects of different doping elements and concentrations for SnS thin film on performance were outlined, and the development and the structure of solar cells based on SnS thin films were discussed. Finally, the development tendency and prospects were predicted.

Стилі APA, Harvard, Vancouver, ISO та ін.

21

Cop, P., S. Kitano, K. Niinuma, B. M. Smarsly, and H. Kozuka. "In-plane stress development in mesoporous thin films." Nanoscale 10, no. 15 (2018): 7002–15. http://dx.doi.org/10.1039/c8nr00793d.

Повний текст джерела

Анотація:

Ordered mesoporous thin films of TiO₂and Ce_xZr_1−xO₂(x= 0, 0.5, 1) were preparedviaan evaporation-induced self-assembly (EISA) process and subsequently investigated in terms of the developing intrinsic and residual in-plane stress.

Стилі APA, Harvard, Vancouver, ISO та ін.

22

TACHIBANA, Takeshi, Yoshihiro YOKOTA, Koichi MIYATA, and Koji KOBASHI. "Development of New Carbon Thin Films. Heteroepitaxial Growth of Diamond Films." Journal of the Surface Finishing Society of Japan 47, no. 5 (1996): 396–401. http://dx.doi.org/10.4139/sfj.47.396.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

23

Tuttle, Bruce A. "Electronic Ceramic Thin Films: Trends in Research and Development." MRS Bulletin 12, no. 7 (November 1987): 40–46. http://dx.doi.org/10.1557/s0883769400066938.

Повний текст джерела

Анотація:

Electronic ceramic materials research is one of the fastest growing, most highly publicized areas of materials science. Subjects receiving considerable attention include high temperature superconductors, multilayer ceramic composites for high density microelectronics packaging, and ferroelectric electro-optic thin films. A complete review of all aspects of electronic ceramics research is beyond the scope of this article, which will focus on two general topics whose development is representative of recent contributions to the field. These two areas are synthesis and characterization of electronic ceramic films,1 and controlled use of low level dopants (1,000 ppm or less) in bulk polycrystalline ceramics, thin films, and single crystals to achieve desired properties. Perspective of the progress in ceramic film development is given by a review of single-crystal synthesis and properties.Several examples of the impact that low level dopants and thin film synthesis have on electronic ceramics development are presented. Dopant concentrations of 1,000 ppm or less can have a dramatic effect on microstructural, optical, and electrical properties. For example, a decrease in aluminum content of 150 ppm resulted in an increase in grain size from 1 to 25 microns in otherwise identical ZnO varistors. Background aluminum concentrations for these varistors were less than 10 ppm. In another example, the photorefractive effect, the change in refractive index with optical light intensity, has been shown to be altered by orders of magnitude with ppm doping levels in ferroelectric electro-optic materials.Several electronic ceramic devices have recently been developed due to improvements in ceramic film processing. Examples of these devices include: 1. multilayer PZT transformers, which allow fabrication of complex monolithic passive multicom-ponent networks, 2. liquid cooled multilayer ceramic substrates, with 400×800 micron liquid transfer capillaries integrated into the multilayer structure via ceramic processing techniques for high density VLSI packaging, and 3. ferroelectric electrooptic thin films that are compatible with silicon or III-V technology. For all the above applications, synthesis of electronic ceramic materials into high purity films is essential.

Стилі APA, Harvard, Vancouver, ISO та ін.

24

YASUI, Haruyuki, Makoto TAKI, Yuuji HASEGAWA, and Shigeki TAKAGO. "Development of an Environmentally Conscious Carbon Thin Films." Journal of the Vacuum Society of Japan 53, no. 1 (2010): 30–36. http://dx.doi.org/10.3131/jvsj2.53.30.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

25

Fan Zhengxiu, 范正修. "Development and Recent Progress of Optical Thin Films." Acta Optica Sinica 31, no. 9 (2011): 0900131. http://dx.doi.org/10.3788/aos201131.0900131.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

26

Elbuken, Caglar, Mustafa Yavuz, and Mir Behrad Khamesee. "Development of crystalline magnetic thin films for microlevitation." Journal of Applied Physics 104, no. 4 (August 15, 2008): 044905. http://dx.doi.org/10.1063/1.2969832.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

27

Broitman, E., W. T. Zheng, H. Sjöström, I. Ivanov, J. E. Greene, and J. E. Sundgren. "Stress development during deposition of CNx thin films." Applied Physics Letters 72, no. 20 (May 18, 1998): 2532–34. http://dx.doi.org/10.1063/1.121410.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

28

Wei, H. L., Hanchen Huang, C. H. Woo, R. K. Zheng, G. H. Wen, and X. X. Zhang. "Development of 〈110〉 texture in copper thin films." Applied Physics Letters 80, no. 13 (April 2002): 2290–92. http://dx.doi.org/10.1063/1.1466518.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

29

Lim, Chang Hwy, Jongyul Kim, Suhyun Lee, Sang-Jin Cho, Young-Hyun Choi, Jong-Won Park, and Myung Kook Moon. "Development of B4C Thin Films for Neutron Detection." Journal of Radiation Protection and Research 40, no. 2 (June 30, 2015): 79–86. http://dx.doi.org/10.14407/jrp.2015.40.2.079.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

30

Mukhopadhyay, A. K., P. S. Das, A. Dey, M. Raychaudhuri, A. K. Mandal, and N. Dey. "Development and Characterization of Magnesium Hydroxide Thin Films." Journal of The Institution of Engineers (India): Series D 93, no. 2 (August 15, 2012): 53–57. http://dx.doi.org/10.1007/s40033-012-0010-0.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

31

Trogolo, J. A., R. A. Roy, J. J. Cuomo, and K. Rajan. "Microstructural Evolution and Texture Development in Thin Films." Materials Science Forum 94-96 (January 1992): 537–42. http://dx.doi.org/10.4028/www.scientific.net/msf.94-96.537.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

32

Mori, T., T. Aizawa, S. Mitani, N. Tsujii, I. Ohkubo, T. Tynell, Y. Kakefuda, et al. "Development of thermoelectric thin films and characterization methods." Journal of Physics: Conference Series 1407 (November 2019): 012055. http://dx.doi.org/10.1088/1742-6596/1407/1/012055.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

33

NAGASAWA, Katsuji, Norio TAGAWA, and Atsunobu MORI. "Development of Double-Layered Composite PZT Thin Films." Proceedings of the Conference on Information, Intelligence and Precision Equipment : IIP 2004 (2004): 150–51. http://dx.doi.org/10.1299/jsmeiip.2004.150.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

34

Iconaru, Simona Liliana, Daniela Predoi, Carmen Steluta Ciobanu, Mikael Motelica-Heino, Régis Guegan, and Coralia Bleotu. "Development of Silver Doped Hydroxyapatite Thin Films for Biomedical Applications." Coatings 12, no. 3 (March 5, 2022): 341. http://dx.doi.org/10.3390/coatings12030341.

Повний текст джерела

Анотація:

Silver doped hydroxyapatite [AgHAp, Ca10−xAg(PO4)6(OH)2], due to its antimicrobial properties, is an advantageous material to be used for various coatings. The AgHAp thin films with xAg = 0.05 and xAg = 0.1 were achieved using the spin-coating method. The resulting samples were examined by X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), Fourier transform infrared spectroscopy (FTIR), Raman spectroscopy, and X-ray photoelectron spectroscopy (XPS). XRD analysis revealed that the particles of both samples are ellipsoidal. Also, in agreement with the results obtained by XRD measurements, the results of the SEM studies have shown that the particles shape is ellipsoidal. Optical properties of silver doped hydroxyapatite thin films deposited on Si substrate were investigated through Fourier transform infrared spectroscopy (FTIR) and Raman spectroscopy. The results obtained by the two complementary techniques highlighted that the molecular structure of the studied samples is not influenced by the increase of the silver concentration in the samples. Our studies revealed that the surface morphology of the obtained samples consist of uniform and continuous layers. The biocompatibility of the obtained thin films was also evaluated with the aid of human osteosarcoma MG63 (ATCC CRL 1427) cell line. Moreover, the in vitro antifungal activity against Candida albicans fungal strain of the AgHAp thin films was studied and the obtained results revealed their antifungal effect. The results of the biological assays showed that the AgHAp thin films are a very promising material for biomedical applications.

Стилі APA, Harvard, Vancouver, ISO та ін.

35

INOMATA, Takashi. "Evaluation of Optical Thin Films and Development of Functional Thin Film Materials." Journal of The Surface Finishing Society of Japan 71, no. 10 (October 1, 2020): 613–19. http://dx.doi.org/10.4139/sfj.71.613.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

36

Sasani Ghamsari, Morteza. "Development of Thin Film Fabrication Using Magnetron Sputtering." Metals 13, no. 5 (May 16, 2023): 963. http://dx.doi.org/10.3390/met13050963.

Повний текст джерела

Анотація:

Due to their versatility, thin metal films are being used in many modern technologies, such as optoelectronics, microelectronics, catalysis, energy conversion and storage, sensors, actuators, and food packaging [...]

Стилі APA, Harvard, Vancouver, ISO та ін.

37

Bravman, John C., and William D. Nix. "Mechanical Behavior of Thin Films." MRS Bulletin 17, no. 7 (July 1992): 25–27. http://dx.doi.org/10.1557/s0883769400041622.

Повний текст джерела

Анотація:

The use of materials based on their mechanical behavior has moderated key aspects of the development of civilization. Starting perhaps with stone and wood, used more or less in forms provided directly by nature, progressing to the ferrous metallurgies that gave birth to the entire industrial revolution, and continuing with today's exotic high-strength, light-weight alloys and composites, materials have frequently been selected to fulfill the structural engineering needs of designers, builders, and inventors. Following these trends, studies of the mechanical behavior of solids, once the exclusive purview of blacksmiths and artisans, came to occupy the attention of scientists and engineers worldwide, and were foundational to the modern discipline of materials science and engineering.In this issue of the MRS Bulletin, we have selected five articles that highlight the intellectual coupling of traditional mechanical behavior investigations with the use of materials in thin film forms. Such a coupling is not entirely new. In an ASM-sponsored seminar held in 1963, for instance, one of the papers presented was entitled simply “Mechanical Properties of Thin Films.” Within the last decade, however, and due largely to developments within the microelectronic and magnetic disk industries, awareness of the need to predict, control, and understand the mechanical behavior of thin film media has grown rapidly. Many of the most important failure mechanisms operative in integrated circuits, for example, such as stress and electromigration voiding, are mechanical in nature.

Стилі APA, Harvard, Vancouver, ISO та ін.

38

Pallavolu, Mohan Reddy, Vasudeva Reddy Minnam Reddy, Phaneendra Reddy Guddeti, and Chinho Park. "Development of SnSe thin films through selenization of sputtered Sn-metal films." Journal of Materials Science: Materials in Electronics 30, no. 17 (August 9, 2019): 15980–88. http://dx.doi.org/10.1007/s10854-019-01968-9.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

39

Аймбетова, И. О., Э. О. Аймбетова, О. С. Байгенженов, Д. Берди, and Б. Умиров. "DEVELOPMENT OF A V2O5 THIN FILM DEPOSITION TECHNIQUE." Вестник ГГНТУ. Технические науки, no. 4(30) (December 22, 2022): 38–48. http://dx.doi.org/10.34708/gstou.2022.47.67.005.

Повний текст джерела

Анотація:

На основании технологического и экономического анализа самым оптимальным и технологически приемлемым методом получения термохромных композиций является легирование пленок фазопереходными материалами, позволяющих управлять основными параметрами энергосбережения и других термосвойств, с последующим нанесением на стеклянные и/или другие подложки. Исследован рост кристаллитов поликристаллических пленок, изготовленных путем одновременной вариации толщины напыленной пленки оксида ванадия и времени ее термообработки при различных температурах. Исследование структуры пленки осуществлено рентгеновским микрозондовым анализатором. Для определения оптимального ведения процесса осаждения тонких пленок оксида ванадия на поверхность стеклянной подложки были исследованы методы магнетронного осаждения, метод центрифугирования, нанесение опусканием в раствор с термохромным материалом. При spin-coating осаждении планарных покрытий тонких пленок V2O5 использована золь-гель техника. На основании проведенных исследований выявлено, что эффективные термохромные и электрохромные свойства демонстрируются пленками, поперечный размер которых менее 2 микрометров. Термическая обработка при температуре 400 позволяет кальцинацию и отжиг вещества. Выявлено, что при совместном послойном осаждении пентаоксида ванадия с оксидами переходных металлов на стеклянную подложку повышение/понижение температуры влияет на индуцированные изменения химических связей в комплексе и/ или координации лигандов вокруг иона переходного металла, который способствует снижению фотокаталической активности, порция ультрафиолетового света, поступающая на поверхность нанокатализатора, полностью поглощается каркасом слоя V2O5. Based on technological and economic analysis, the most optimal and technologically acceptable method for obtaining thermochromic compositions is the alloying of films of phase-transition materials that allow controlling the main parameters of energy saving and other thermal properties, followed by application to glass and/or other substrates. The growth of crystallites of polycrystalline films made by simultaneous variation of the thickness of the sprayed vanadium oxide film and the time of its heat treatment at different temperatures is investigated. The study of the film structure was carried out by an X-ray microprobe analyzer. In order to determine the optimal conduct of the process of deposition methods of thin films of vanadium oxide on the surface of a glass substrate, magnetron deposition methods, the method of centrifugation deposition by lowering into a solution with thermochromic material were investigated. During spin-coating deposition of planar coatings of V2O5 thin films, sol-gel technique was used. Based on the conducted studies, it was revealed that effective thermochromic and electrochromic properties are demonstrated by films whose transverse size is less than 2 micrometers. Heat treatment at a temperature of 400 allows calcination and annealing of the substance. It was revealed that during the joint layer-by-layer deposition of vanadium pentoxide with transition metal oxides on a glass substrate, an increase/decrease in temperature affects induced changes in chemical bonds in the complex and/or coordination of ligands around the transition metal ion, which contributes to a decrease in photocatalytic activity, a portion of ultraviolet light entering the surface of the nanocatalyst is completely absorbed by the framework of the V2O5 layer.

Стилі APA, Harvard, Vancouver, ISO та ін.

40

Jadi, Rajendra K., Divya J. Yadagiri, Mounika Kuchukuntla, Mounika Konatham, Mounika T. Gorle, and Vasudha Bakshi. "Development and Characterization of Sildenafil Citrate Oral Thin Films." International Journal of Pharmaceutical Sciences and Drug Research 13, no. 02 (March 29, 2020): 147–51. http://dx.doi.org/10.25004/ijpsdr.2021.130205.

Повний текст джерела

Анотація:

The current work aimed to develop sildenafil citrate (SC) oral thin films. SC oral thin films (OTF) were prepared by solvent casting method. The ingredients include hydroxypropyl methylcellulose (HPMC), E4 (as film former), glycerol (as lubricating agent), polyethylene glycol 600 (as plasticizer), rose oil (as flavoring agent), and de-ionized water (as solvent). The SC-OTFs were successfully prepared by the solvent casting method. The drug excipient compatibility studies showed the absence of drug excipient interactions in fourier transform infrared spectroscopy (FTIR) spectra. All the prepared formulations (F1 to F6) were evaluated for several physicochemical parameters like morphology (i.e., size, shape, color), thickness, uniformity (i.e., content and weight), surface pH measurement, in vitro disintegration time, in vivo studies (i.e., taste), tensile strength, folding endurance and in vitro drug release and all were found within pharmacopoeial limits. In vitro, drug release studies (F1 to F6) in simulated salivary fluid (6.8 pH phosphate buffer) showed that 98 ± 1.26% drug was released from F4 in 60 sec. The OTF is a promising formulation for SC that results in high solubility, rapid onset of action, and enhanced systemic bioavailability (BA).

Стилі APA, Harvard, Vancouver, ISO та ін.

41

Chien, A. T., L. Zhao, M. Colic, J. S. Speck, and F. F. Lange. "Microstructural development of BaTiO3 heteroepitaxial thin films by hydrothermal synthesis." Journal of Materials Research 13, no. 3 (March 1998): 649–59. http://dx.doi.org/10.1557/jmr.1998.0081.

Повний текст джерела

Анотація:

The hydrothermal growth of epitaxial BaTiO3 thin films on single-crystal SrTiO3 substrates occurs by the island growth mode. The aqueous solution chemistry is found to control interfacial characteristics and plays an important role in controlling film formation and faceting. Island faceting can be changed by the introduction of additional cations during synthesis. Electrophoretic data, confirmed by adsorption measurements, show that barium is a potential determining counterion and adsorbs on SrTiO3 surfaces. Initial electrical measurements show that the BaTiO3 films have a dielectric constant of 141 with a loss tangent of 0.9 that decreases with heat treatment.

Стилі APA, Harvard, Vancouver, ISO та ін.

42

Lin, C. R., D. H. Wei, M. K. BenDao, W. E. Chen, and T. Y. Liu. "Development of High-Performance UV Detector Using Nanocrystalline Diamond Thin Film." International Journal of Photoenergy 2014 (2014): 1–8. http://dx.doi.org/10.1155/2014/492152.

Повний текст джерела

Анотація:

Nanocrystalline diamond (NCD) films are promising materials for wide-spread applications due to their outstanding characteristics of chemical, physical, and highly smooth surface. Our present work aimed at the fabrication of high performance diamond-based UV detector. NCD films were prepared by microwave plasma enhanced chemical vapor deposition process, and then Au interdigital electrodes were deposited onto the surface of the as-grown NCD film by sputtering technique. Annealing procedures were conducted at various temperatures to obtain Ohmic contact of NCD/Au structure. The surface morphology, microstructure, and wettablity of the NCD films were analyzed by scanning electron microscopy, atomic forced microscopy, Raman spectroscopy, X-ray photoelectron spectroscopy, transmission electron microscopy, and water contact angle measurement, respectively. The electrical property and photoconductivity of the fabricated devices were tested for UV detection application. It was found that the NCD films possessed high sp3fraction of 68.6%, low surface roughness of 9.6 nm, and good hydrophobicity, as deposited under working pressure of 40 Torr. Also, the NCD/Au structure annealed at 500°C exhibited a good Ohmic contact characteristic, high detection efficiency, and fast response to UV irradiation in air ambient. The proposed study indeed demonstrates prospective applications of NCD films in UV detector, photocatalyst, solar cell, and so on.

Стилі APA, Harvard, Vancouver, ISO та ін.

43

Czigány, Zsolt. "Structure and Phase Transformations in Thin Films." Coatings 13, no. 7 (July 11, 2023): 1233. http://dx.doi.org/10.3390/coatings13071233.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

44

Malikov, V. N. "EDDY CURRENT METHOD FOR STUDYING INHOMOGENEITIES AND DEFECTS IN THIN METAL FILMS." Eurasian Physical Technical Journal 20, no. 4 (46) (December 19, 2023): 116–24. http://dx.doi.org/10.31489/2023no4/116-124.

Повний текст джерела

Анотація:

The variety of structure and specific properties associated with the small thickness of thin metal films lead to the fact that their physical characteristics differ significantly from the characteristics of the same materials in the bulk state. To determine the characteristics of thin metal films, the development of new non-destructive research methods is relevant. The article substantiates the advantages of the eddy current testing method for studying the surface of thin metal films of various metals. The design of a subminiature eddy current transducer designed to study the electrical conductivity, thickness and degree of damage of thin metal films is presented, and a hardware and software complex is designed that allows the control of the developed transducer. The study of metal films made it possible to show the inhomogeneity of the distribution of the substance over the surface of the substrate. The dependence of the signal amplitude of the developed transducer on the film thicknesswas also determined. To verify the results obtained, studies of the light transmittance of the films were carried out using the photometric method. Comparison of the measurement results obtained by the two methods showed a high degree of agreement betweenthe two developed methods for studying films.

Стилі APA, Harvard, Vancouver, ISO та ін.

45

Weinberger, Nikolaus, Tim Kodalle, Tobias Bertram, René Gunder, Andreas Saxer, Roman Lackner, Georg N. Strauss, and Christian A. Kaufmann. "Phase development in RbInSe2 thin films – a temperature series." Scripta Materialia 202 (September 2021): 113999. http://dx.doi.org/10.1016/j.scriptamat.2021.113999.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

46

Prasad, Brijesh, Ibrahim M. Alarifi, Fateh Singh Gill, Vikas Rathi, and Varij Panwar. "Development of conductive thin films as piezoresistive strain sensor." Materials Chemistry and Physics 276 (January 2022): 125371. http://dx.doi.org/10.1016/j.matchemphys.2021.125371.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

47

Nadzri, Nur Izzati Muhammad, Dayang Mas Shufina Ibrahim, and Saphuang Sompon. "A review of iron nitride based thin films development." IOP Conference Series: Materials Science and Engineering 701 (December 19, 2019): 012047. http://dx.doi.org/10.1088/1757-899x/701/1/012047.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

48

Yu, E., Jong Sik Shim, Inyoung Kim, Jongryoul Kim, Suk Hee Han, Hi Jung Kim, Ki Hyeon Kim, and M. Yamaguchi. "Development of FeCo-based thin films for gigahertz applications." IEEE Transactions on Magnetics 41, no. 10 (October 2005): 3259–61. http://dx.doi.org/10.1109/tmag.2005.854667.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

49

Chandra, R., Davinder Kaur, Amit Kumar Chawla, N. Phinichka, and Z. H. Barber. "Texture development in Ti–Si–N nanocomposite thin films." Materials Science and Engineering: A 423, no. 1-2 (May 2006): 111–15. http://dx.doi.org/10.1016/j.msea.2005.09.132.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

50

Zeiger, W., W. Brückner, J. Schumann, W. Pitschke, and H. Worch. "Stress development in FeAl8 thin films during heat treatment." Thin Solid Films 370, no. 1-2 (July 2000): 315–20. http://dx.doi.org/10.1016/s0040-6090(00)00857-9.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

Статті в журналах з теми "Development of thin films"

Оформте джерело за APA, MLA, Chicago, Harvard та іншими стилями