Добірка наукової літератури з теми "Dépôt chimique en phase vapeur d’organométalliques (MOCVD)"
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Дисертації з теми "Dépôt chimique en phase vapeur d’organométalliques (MOCVD)"
Riaz, Adeel. "Conception, optimisation et caractérisation avancée de nouvelles microstructures d'électrodes pour piles à oxydes solides." Electronic Thesis or Diss., Université Grenoble Alpes, 2024. http://www.theses.fr/2024GRALI006.
Повний текст джерелаSolid oxide cells (SOCs) are electrochemical energy conversion devices which can work in either fuel cell mode to convert fuel into electrical power or vice versa when working in electrolysis mode. SOCs are ceramic-based devices with a dense solid oxide electrolyte, able to conduct negative oxygen ions, sandwiched between two electrodes. This thesis focuses on the oxygen electrode optimization and advanced characterization using thin films deposited by Pulsed Injection-Metal Organic Chemical Vapor Deposition (PI-MOCVD). La2NiO4+δ (L2NO4) is an oxide with a Ruddlesden-Popper phase layered structure consisting of alternated rock salt and perovskite layers. It is a promising oxygen electrode material for intermediate (500- 700 °C) and low temperature (< 500 °C) operation due to its high oxygen surface exchange and diffusion coefficients, and thermal expansion coefficients close to the commonly used electrolytes. This study is aimed at tailoring and optimizing the nanostructure of L2NO4 thin films for high performance reversible solid oxide cells (rSOCs) and micro-solid oxide cells (μ-SOCs). Kinetic studies have been performed by Electrical Relaxation Conductivity (ECR) and Electrochemical Impedance Spectroscopy (EIS). Advanced characterization tools such as in situ Raman spectroscopy have been utilized to understand the phase transitions of L2NO4 and quantify the kinetic mass transport properties by Isotopic Exchange Raman Spectroscopy (IERS). Other advanced tools such as in situ X-ray diffraction and in situ spectroscopy ellipsometry have been used to study the structural and optical properties of L2NO4 when varying the oxygen content. Finally, full cell measurements and stability tests in SOFC and SOEC modes have been carried out on anode-supported and electrolyte-supported cells
Karsi, Mustapha. "Dépôt chimique en phase vapeur de cuivre à partir de composés métal-organiques (MOCVD) : étude de l'activation photonique et de la sélectivité." Toulouse, INPT, 1995. http://www.theses.fr/1995INPT027G.
Повний текст джерелаBonnefond, Pierre. "Elaboration à basse température par MOCVD de revêtements de nitrures et carbonitrures de vanadium à partir du tetrakis (diethylamido) vanadium." Toulouse, INPT, 1997. http://www.theses.fr/1997INPT014G.
Повний текст джерелаGueroudji, Latifa. "Etude de l'incorporation du carbone dans les revêtements à base de chrome élaborés par MOCVD." Toulouse, INPT, 1996. http://www.theses.fr/1996INPT031G.
Повний текст джерелаBrevet, Aude. "Les premiers instants de la croissance de films minces d'oxydes métalliques par MOCVD : caractérisation physico-chimique de l'interface film/substrat." Dijon, 2006. http://www.theses.fr/2006DIJOS003.
Повний текст джерелаThe initial stages of Metalorganic Chemical Vapour Deposition (MOCVD) of TiO2 thin films on Si(100) were studied in situ by surface analyses (XPS, ARXPS, AES). An original experimental set-up was built for this purpose and developed. Information obtained from these in situ experiments was completed by ex situ characterisations (HRTEM, SIMS, GIXRD. . . ). The formation of an interfacial SiOy<2 layer resulting of the interaction of the precursor Ti(OCH(CH3)2)4 with the substrate takes place before the formation of stoichiometric TiO2 and leads to the presence of carbon at the interface. At the deposition temperature, 675 °C, silicon diffusion within the TiO2 external layer was also revealed. Concerning the crystalline structure of the films, anatase and rutile crystallites were observed growing within the TiO2 amorphous layer from initial stages of the growth. Rutile grains growth stops during deposition while anatase grains follow their growth forming monocrystalline columns
Briot, Olivier. "Le semiconducteur II-VI ZnSe : épitaxie par MOCVD et étude de la compensation." Montpellier 2, 1990. http://www.theses.fr/1990MON20085.
Повний текст джерелаGallon, Philippe. "Mise en oeuvre de différents processus de dépôts MOCVD pour la croissance du matériau photovoltaïque CuInSe2." Montpellier 2, 1997. http://www.theses.fr/1997MON20209.
Повний текст джерелаOuchen, Fahima. "Etude des couches minces de CuInSe2 obtenues par la technique de MOCVD en une ou plusieurs étapes pour des applications photovoltai͏̈que." Montpellier 2, 1996. http://www.theses.fr/1996MON20101.
Повний текст джерелаCaubel, Yannick. "Contribution à l'élaboration de couches minces d'YBa2Cu3O7-x par MOCVD sur aciers : les couches de conversion comme couches intermédiaires." Toulouse, INPT, 1995. http://www.theses.fr/1995INPT011G.
Повний текст джерелаManole, Claudiu Constantin. "MOCVD and electrochemical polymeric thin films : elaboration, characterization, properties ans applications." Thesis, Toulouse, INPT, 2012. http://www.theses.fr/2012INPT0165/document.
Повний текст джерелаThe thesis deals with two types of polymeric thin films: poly (methyl methacrylate) (PMMA) and polypyrrole (PPy). The thin films were grown by a dry and a wet route. The dry route involved the growth of the polymeric films by an original process of Chemical Vapor Deposition, namely Photo-CVD. The growth involves the UV activation of the monomer species in the gas phase. Both PMMA and PPy were obtained for the first time by this Photo-CVD. The characterization highlighted properties with possible applications in microelectronics, micro-optics and as heat generating devices. The wet route involved the growth of polymeric and hybrid organic/inorganic thin films by an electrochemical approach. Organic PPy and inorganic TiO2 nanostructures were obtained and characterized by various electrochemical techniques. The growth aspects of PPy were supplementary highlighted by the Surface Plasmon Resonance
Книги з теми "Dépôt chimique en phase vapeur d’organométalliques (MOCVD)"
The MOCVD Challenge: Volume 1, A Survey of GaInAsP-InP for Photonic and Electronic Applications (Mocvd Challenge). Taylor & Francis, 1989.
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