Добірка наукової літератури з теми "Degenerate semiconductors"
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Статті в журналах з теми "Degenerate semiconductors"
Khan, Arif, and Atanu Das. "Diffusivity-Mobility Relationship for Heavily Doped Semiconductors with Non-Uniform Band Structures." Zeitschrift für Naturforschung A 65, no. 10 (October 1, 2010): 882–86. http://dx.doi.org/10.1515/zna-2010-1017.
Повний текст джерелаKhan, Arif, and Atanu Das. "General Diffusivity-Mobility Relationship for Heavily Doped Semiconductors." Zeitschrift für Naturforschung A 64, no. 3-4 (April 1, 2009): 257–62. http://dx.doi.org/10.1515/zna-2009-3-414.
Повний текст джерелаPreezant, Yevgeni, Yohai Roichman, and Nir Tessler. "Amorphous organic devices degenerate semiconductors." Journal of Physics: Condensed Matter 14, no. 42 (October 11, 2002): 9913–24. http://dx.doi.org/10.1088/0953-8984/14/42/306.
Повний текст джерелаDas, Atanu, and Arif Khan. "The Diffusivity-Mobility Relationship of Heavily Doped Semiconductors Exhibiting a Non-Parabolic Band Structure and Bandgap Narrowing." Zeitschrift für Naturforschung A 62, no. 10-11 (November 1, 2007): 605–8. http://dx.doi.org/10.1515/zna-2007-10-1108.
Повний текст джерелаDmitriev, A. P., E. Borovitskaya, M. E. Levinshtein, S. L. Rumyantsev, and M. S. Shur. "Low frequency noise in degenerate semiconductors." Journal of Applied Physics 90, no. 1 (July 2001): 301–5. http://dx.doi.org/10.1063/1.1379556.
Повний текст джерелаKeyes, R. W. "Potentials and junctions in degenerate semiconductors." Solid-State Electronics 32, no. 2 (February 1989): 159–64. http://dx.doi.org/10.1016/0038-1101(89)90183-4.
Повний текст джерелаLax, M., and B. I. Halperin. "Impurity band tails in degenerate semiconductors." International Journal of Quantum Chemistry 1, S1 (June 18, 2009): 767. http://dx.doi.org/10.1002/qua.560010683.
Повний текст джерелаAktsipetrov, O. A., I. M. Baranova, K. N. Evtyukhov, T. V. Murzina, and I. V. Chernyĭ. "Reflected second harmonic in degenerate semiconductors: nonlinear electroreflection under surface degeneracy conditions." Soviet Journal of Quantum Electronics 22, no. 9 (September 30, 1992): 807–14. http://dx.doi.org/10.1070/qe1992v022n09abeh003603.
Повний текст джерелаMondal, M., and K. P. Gnatak. "Effect of carrier degeneracy on the screening length in degenerate tetragonal semiconductors." physica status solidi (b) 135, no. 1 (May 1, 1986): 239–51. http://dx.doi.org/10.1002/pssb.2221350125.
Повний текст джерелаNagaev, É. L. "Phase separation in degenerate magnetic oxide semiconductors." Physics of the Solid State 40, no. 11 (November 1998): 1873–77. http://dx.doi.org/10.1134/1.1130676.
Повний текст джерелаДисертації з теми "Degenerate semiconductors"
Canto, Edesly J. "Picosecond degenerate four-wave mixing in semiconductors." Thesis, University of North Texas, 1990. https://digital.library.unt.edu/ark:/67531/metadc798147/.
Повний текст джерелаConduit, C. J. "Collective phenomena in correlated semiconductors, degenerate Fermi gases, and ferroelectrics." Thesis, University of Cambridge, 2009. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.597887.
Повний текст джерелаIkeda, Katsumoto. "Magnetothermoelectric properties of the degenerate semiconductor Hg1-xFexSe." Thesis, National Library of Canada = Bibliothèque nationale du Canada, 2001. http://www.collectionscanada.ca/obj/s4/f2/dsk3/ftp04/MQ53000.pdf.
Повний текст джерелаGabel, Allan Harley. "Degenerate four wave mixing in semiconductor doped glass waveguides." Diss., The University of Arizona, 1988. http://hdl.handle.net/10150/184367.
Повний текст джерелаBonafè, Filippo. "Charge accumulation and transport in degenerately doped semiconducting polymers with mixed ionic and electronic conductivity." Master's thesis, Alma Mater Studiorum - Università di Bologna, 2020. http://amslaurea.unibo.it/21710/.
Повний текст джерелаWinarski, David J. "Development of zinc oxide based flexible electronics." Bowling Green State University / OhioLINK, 2019. http://rave.ohiolink.edu/etdc/view?acc_num=bgsu1558088851479794.
Повний текст джерелаCornelius, Steffen. "Charge transport limits and electrical dopant activation in transparent conductive (Al,Ga):ZnO and Nb:TiO2 thin films prepared by reactive magnetron sputtering." Doctoral thesis, Saechsische Landesbibliothek- Staats- und Universitaetsbibliothek Dresden, 2014. http://nbn-resolving.de/urn:nbn:de:bsz:14-qucosa-156145.
Повний текст джерелаYang, Chao-Neng, and 楊肇能. "Exploring spatial and temporal states in optically pumped semiconductor lasers at degenerate cavities and non-degenerate cavities." Thesis, 2016. http://ndltd.ncl.edu.tw/handle/40012032726465660757.
Повний текст джерела國立交通大學
理學院應用科技學程
104
We use high-power optically pumped semiconductor laser module as experimental architecture, the laser resonant cavity composed by the different curvatures plano-concave lens as an output mirror, via adjusting the pumping power and laser resonator length, observe transverse pattern, temporal trace and RF power spectrum in the non-degenerate and degenerate cavity. During the experiment, we add an aperture in the resonance cavity and investigate the influence of high-order transverse modes on the self-mode locking (SML) in an optically pumped semiconductor laser (OPSL). We discovered the temporal behavior becomes the random dynamics when too many high-order transverse modes are excited. In the degenerate cavity we found the laser spot that presents special triangular pattern when the ratio of fT and fL approaches to 1/3, we also found that the curve of output power will drop first and then rise.
Cornelius, Steffen. "Charge transport limits and electrical dopant activation in transparent conductive (Al,Ga):ZnO and Nb:TiO2 thin films prepared by reactive magnetron sputtering: Charge transport limits and electrical dopant activation in transparent conductive (Al,Ga):ZnO and Nb:TiO2 thin films prepared by reactive magnetron sputtering." Doctoral thesis, 2013. https://tud.qucosa.de/id/qucosa%3A28409.
Повний текст джерелаЧастини книг з теми "Degenerate semiconductors"
Tadyszak, Patrick, Alain Cappy, Francois Danneville, Lino Reggiani, Luca Varani, and Lucio Rota. "Hot-Carrier Noise under Degenerate Conditions." In Hot Carriers in Semiconductors, 413–15. Boston, MA: Springer US, 1996. http://dx.doi.org/10.1007/978-1-4613-0401-2_94.
Повний текст джерелаUhrig, A., U. Woggon, M. Portuné, V. Sperling, and C. Klingshirn. "Dephasing Time Measurements in Quantum Dots by Non-Degenerate Four Wave Mixing." In Coherent Optical Interactions in Semiconductors, 261–65. Boston, MA: Springer US, 1994. http://dx.doi.org/10.1007/978-1-4757-9748-0_12.
Повний текст джерелаForeman, Bradley A. "New effective-mass theory for degenerate bands in semiconductors." In Springer Proceedings in Physics, 41–42. Berlin, Heidelberg: Springer Berlin Heidelberg, 2001. http://dx.doi.org/10.1007/978-3-642-59484-7_11.
Повний текст джерелаOhta, Hiromichi, S. Ohta, and K. Koumoto. "High-Temperature Thermoelectric Performance of Strontium Titanate Degenerate Semiconductors." In Ceramic Transactions Series, 343–48. Hoboken, NJ, USA: John Wiley & Sons, Inc., 2011. http://dx.doi.org/10.1002/9781118144121.ch33.
Повний текст джерелаRudan, M., and G. Perroni. "A Method for Determining the Screening Length of the Coulombic Scattering in Non-Degenerate and Degenerate Semiconductors." In Simulation of Semiconductor Processes and Devices 2004, 121–24. Vienna: Springer Vienna, 2004. http://dx.doi.org/10.1007/978-3-7091-0624-2_29.
Повний текст джерелаKantner, Markus, and Thomas Koprucki. "Non-isothermal Scharfetter–Gummel Scheme for Electro-Thermal Transport Simulation in Degenerate Semiconductors." In Finite Volumes for Complex Applications IX - Methods, Theoretical Aspects, Examples, 173–82. Cham: Springer International Publishing, 2020. http://dx.doi.org/10.1007/978-3-030-43651-3_14.
Повний текст джерелаHalperin, B. I. "Degenerately-Doped Semiconductors in Strong Magnetic Fields." In Condensed Matter Theories, 259–64. Boston, MA: Springer US, 1987. http://dx.doi.org/10.1007/978-1-4613-0917-8_28.
Повний текст джерелаIsler, M., D. Liebig, and K. Schünemann. "Efficient Modeling of Spatially Varying Degeneracy in Monte Carlo Particle Simulation of Highly Doped Submicron HEMT." In Simulation of Semiconductor Processes and Devices 1998, 169–72. Vienna: Springer Vienna, 1998. http://dx.doi.org/10.1007/978-3-7091-6827-1_43.
Повний текст джерела"Degenerate Ferromagnetic Semiconductors." In Colossal Magnetoresistance and Phase Separation in Magnetic Semiconductors, 189–241. PUBLISHED BY IMPERIAL COLLEGE PRESS AND DISTRIBUTED BY WORLD SCIENTIFIC PUBLISHING CO., 2002. http://dx.doi.org/10.1142/9781860949661_0005.
Повний текст джерела"Non-degenerate Ferromagnetic Semiconductors." In Colossal Magnetoresistance and Phase Separation in Magnetic Semiconductors, 85–131. PUBLISHED BY IMPERIAL COLLEGE PRESS AND DISTRIBUTED BY WORLD SCIENTIFIC PUBLISHING CO., 2002. http://dx.doi.org/10.1142/9781860949661_0003.
Повний текст джерелаТези доповідей конференцій з теми "Degenerate semiconductors"
Salamat, Shuaib, Muneeb Ahsan, and Irslan Arif. "Thermoelectric performance of non-degenerate and degenerate semiconductors." In 2017 Fifth International Conference on Aerospace Science & Engineering (ICASE). IEEE, 2017. http://dx.doi.org/10.1109/icase.2017.8374246.
Повний текст джерелаHannes, Wolf-Rüdiger, Laura Krauß-Kodytek, Claudia Ruppert, Markus Betz, and Torsten Meier. "Intensity-dependent degenerate and non-degenerate nonlinear optical absorption of direct-gap semiconductors." In Ultrafast Phenomena and Nanophotonics XXIII, edited by Markus Betz and Abdulhakem Y. Elezzabi. SPIE, 2019. http://dx.doi.org/10.1117/12.2503539.
Повний текст джерелаKira, M., and S. W. Koch. "Photoluminescence and quantum-degenerate exciton states in semiconductors." In Microelectronics, MEMS, and Nanotechnology, edited by Derek Abbott, Yuri S. Kivshar, Halina H. Rubinsztein-Dunlop, and Shanhui Fan. SPIE, 2005. http://dx.doi.org/10.1117/12.649847.
Повний текст джерелаSurmalyan, Ash V. "Electron mobility variance in metals and degenerate semiconductors." In 2013 International Conference on Noise and Fluctuations (ICNF). IEEE, 2013. http://dx.doi.org/10.1109/icnf.2013.6578973.
Повний текст джерелаEvlyukhin, Andrey B., Alexey V. Dmitriev, and Alexey Artamkin. "Interband breakdown in a Kane semiconductor with a degenerate hole distribution." In PHYSICS OF SEMICONDUCTORS: 28th International Conference on the Physics of Semiconductors - ICPS 2006. AIP, 2007. http://dx.doi.org/10.1063/1.2729809.
Повний текст джерелаFolkes, Patrick A., Mitra B. Dutta, Sergey Rudin, Hongen Shen, Monica A. Taysing-Lara, Doran D. Smith, Peter G. Newman, and Melanie W. Cole. "Excitonic recombination of degenerate two-dimensional electrons with localized photoexcited holes in a single heterojunction quantum well." In Semiconductors '92, edited by Gottfried H. Doehler and Emil S. Koteles. SPIE, 1992. http://dx.doi.org/10.1117/12.137601.
Повний текст джерелаReichert, Matthew, Brendan Turnbull, Dmitry A. Fishman, Himansu Pattanaik, Scott Webster, David J. Hagan, and Eric W. Van Stryland. "Extremely Non-Degenerate Two-Photon Emission in Direct-Gap Semiconductors." In Laser Science. Washington, D.C.: OSA, 2012. http://dx.doi.org/10.1364/ls.2012.lth2i.6.
Повний текст джерелаGüçlü, A. D., P. Potasz, P. Hawrylak, Jisoon Ihm, and Hyeonsik Cheong. "Optical Properties of Graphene Quantum Dots with Fractionally Filled Degenerate Shell of Zero Energy States." In PHYSICS OF SEMICONDUCTORS: 30th International Conference on the Physics of Semiconductors. AIP, 2011. http://dx.doi.org/10.1063/1.3666604.
Повний текст джерелаRudolph, J., J. H. Buß, F. Semond, and D. Hägele. "Dyakonov-perel electron spin relaxation in a highly degenerate wurtzite semiconductor." In THE PHYSICS OF SEMICONDUCTORS: Proceedings of the 31st International Conference on the Physics of Semiconductors (ICPS) 2012. AIP, 2013. http://dx.doi.org/10.1063/1.4848435.
Повний текст джерелаYee, K. J., J. H. Kim, M. H. Jung, B. H. Hong, K. J. Kong, Jisoon Ihm, and Hyeonsik Cheong. "Observation of Different Transient Absorptions Between Single and Multilayer Graphene from Non-degenerate Pump-probe Spectroscopy." In PHYSICS OF SEMICONDUCTORS: 30th International Conference on the Physics of Semiconductors. AIP, 2011. http://dx.doi.org/10.1063/1.3666609.
Повний текст джерела