Статті в журналах: "Dark Count Rate (DCR)"

1

Wang, Wei, Guang Wang, Hongan Zeng, Yuanyao Zhao, U.-Fat Chio, and Jun Yuan. "A low dark count rate single photon avalanche diode with standard 180 nm CMOS technology." Modern Physics Letters B 33, no. 09 (March 30, 2019): 1950099. http://dx.doi.org/10.1142/s0217984919500994.

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A single photon avalanche diode (SPAD) structure designed with standard 180 nm CMOS technology is investigated in detail. The SPAD employs a [Formula: see text]-well anode, rather than the conventional [Formula: see text] layer, and with a [Formula: see text]-well/deep [Formula: see text]-well junction with square shape, a deep retrograde [Formula: see text]-well virtual guard ring which prevents the premature edge avalanche breakdown. The analytical and simulation results show that the SPAD exhibits a uniform electric field distribution in [Formula: see text]-well/deep [Formula: see text]-well junction with the active area of [Formula: see text], and the avalanche breakdown voltage is as low as 9 V, the peak of the photon detection efficiency (PDE) is about 33% at 500 nm, the relatively low dark count rate (DCR) of 0.66 KHz at room temperature is obtained.

2

Xu, Qing Yao, Hong Pei Wang, Xiang Chao Hu, Hai Qian, Ying Cheng Peng, Xiao Hang Ren, and Yan Jie Li. "Quenching Circuit of Avalanche Diodes for Single Photon Detection." Applied Mechanics and Materials 437 (October 2013): 1073–76. http://dx.doi.org/10.4028/www.scientific.net/amm.437.1073.

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To reduce the afterpulsing in single photon detection based on avalanche diodes, an advanced passive quenching circuit for operation in free-running mode is developed. The measurement setup is designed. The dark count rate (DCR) and afterpulsing of Single photon avalanche diodes (SPADs) are measured. The results show that the new passive quenching circuit has a better afterpulsing performance compared to traditional circuits.

3

Wu, Ming-Lo, Emanuele Ripiccini, Ekin Kizilkan, Francesco Gramuglia, Pouyan Keshavarzian, Carlo Alberto Fenoglio, Kazuhiro Morimoto, and Edoardo Charbon. "Radiation Hardness Study of Single-Photon Avalanche Diode for Space and High Energy Physics Applications." Sensors 22, no. 8 (April 11, 2022): 2919. http://dx.doi.org/10.3390/s22082919.

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The radiation hardness of 180 nm complementary metal–oxide–semiconductor (CMOS) and 55 nm bipolar–CMOS–double-diffused MOS single-photon avalanche diodes (SPADs) is studied using 10 MeV and 100 MeV protons up to a displacement damage dose of 1 PeV/g. It is found that the dark count rate (DCR) levels are dependent on the number and the type of defects created. A new stepwise increase in the DCR is presented. Afterpulsing was found to be a significant contributor to the observed DCR increase. A new model for DCR increase prediction is proposed considering afterpulsing. Most of the samples under test retain reasonable DCR levels after irradiation, showing high tolerance to ionizing and displacement damage caused by protons. Following irradiation, self-healing was observed at room temperature. Furthermore, high-temperature annealing shows potential for accelerating recovery. Overall, the results show the suitability of SPADs as optical detectors for long-term space missions or as detectors for high-energy particles.

4

Liu, Fang, Xiaoxue Fan, Xilei Sun, Bin Liu, Junjie Li, Yong Deng, Huan Jiang, Tianze Jiang, and Peiguang Yan. "Characterization of a Mass-Produced SiPM at Liquid Nitrogen Temperature for CsI Neutrino Coherent Detectors." Sensors 22, no. 3 (January 31, 2022): 1099. http://dx.doi.org/10.3390/s22031099.

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Silicon Photomultiplier (SiPM) is a sensor that can detect low-light signals lower than the single-photon level. In order to study the properties of neutrinos at a low detection threshold and low radioactivity experimental background, a low-temperature CsI neutrino coherent scattering detector is designed to be read by the SiPM sensor. Less thermal noise of SiPM and more light yield of CsI crystals can be obtained at the working temperature of liquid nitrogen. The breakdown voltage (Vbd) and dark count rate (DCR) of SiPM at liquid nitrogen temperature are two key parameters for coherent scattering detection. In this paper, a low-temperature test is conducted on the mass-produced ON Semiconductor J-Series SiPM. We design a cryogenic system for cooling SiPM at liquid nitrogen temperature and the changes of operating voltage and dark noise from room to liquid nitrogen temperature are measured in detail. The results show that SiPM works at the liquid nitrogen temperature, and the dark count rate drops by six orders of magnitude from room temperature (120 kHz/mm2) to liquid nitrogen temperature (0.1 Hz/mm2).

5

Xun, Mingzhu, Yudong Li, Jie Feng, Chengfa He, Mingyu Liu, and Qi Guo. "Effect of Proton Irradiation on Complementary Metal Oxide Semiconductor (CMOS) Single-Photon Avalanche Diodes." Electronics 13, no. 1 (January 4, 2024): 224. http://dx.doi.org/10.3390/electronics13010224.

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The effects of proton irradiation on CMOS Single-Photon Avalanche Diodes (SPADs) are investigated in this article. The I–V characteristics, dark count rate (DCR), and photon detection probability (PDP) of the CMOS SPADs were measured under 30 MeV and 52 MeV proton irradiations. Two types of SPAD, with and without shallow trench isolation (STI), were designed. According to the experimental results, the leakage current, breakdown voltage, and PDP did not change after irradiation at a DDD of 2.82 × 108 MeV/g, but the DCR increased significantly at five different higher voltages. The DCR increased by 506 cps at an excess voltage of 2 V and 10,846 cps at 10 V after 30 MeV proton irradiation. A γ irradiation was conducted with a TID of 10 krad (Si). The DCR after the γ irradiation increased from 256 cps to 336 cps at an excess voltage of 10 V. The comparison of the DCR after proton and γ-ray irradiation with two structures of SPAD indicates that the major increase in the DCR was due to the depletion region defects caused by proton displacement damage rather than the Si-SiO2 interface trap generated by ionization.

6

Razeto, A., F. Acerbi, V. Camillo, M. Carlini, L. Consiglio, A. Flammini, C. Galbiati, et al. "Very large SiPM arrays with aggregated output." Journal of Instrumentation 17, no. 05 (May 1, 2022): P05038. http://dx.doi.org/10.1088/1748-0221/17/05/p05038.

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Abstract In this work we will document the design and the performances of a SiPM-based photo-detector with a surface area of 100 cm2 conceived to operate as a replacement for PMTs. The signals from 94 SiPMs are summed up to produce an aggregated output that exhibits in liquid nitrogen a dark count rate (DCR) lower than 100 cps over the entire surface, a signal to noise ratio better than 13, and a timing resolution better than 5.5 ns. The module feeds about 360 mW at 5 V with a dynamic range in excess of 500 photo-electrons on a 100 Ω differential line. The unit can also operate at room temperature, at the cost of an increase of DCR to 108 cps.

7

Zeng, Mei-Ling, Yang Wang, Xiang-Liang Jin, Yan Peng, and Jun Luo. "Design, Fabrication, and Verification of Blue-Extended Single-Photon Avalanche Diode with Low Dark Count Rate and High Photon Detection Efficiency." Journal of Nanoelectronics and Optoelectronics 16, no. 4 (April 1, 2021): 546–51. http://dx.doi.org/10.1166/jno.2021.2975.

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Single-photon avalanche diodes (SPADs) can detect extremely weak optical signals and are mostly used in single-photon imaging, quantum communication, medical detection, and other fields. In this paper, a low dark count rate (DCR) single-photon avalanche diode device is designed based on the 180 nm standard BCD process. The device has a good response in the 450~750 nm spectral range. The active area of the device adopts a P+/N-Well structure with a diameter of 20 µm. The low-doped N-Well increases the thickness of the depletion region and can effectively improve the detection sensitivity; the P-Well acts as a guard ring to prevent premature breakdown of the PN junction edge; the isolation effect of the deep N-Well reduces the noise coupling of the substrate. Use the TCAD simulation tool to verify the SPAD’s basic principles. The experimental test results show that the avalanche breakdown voltage of the device is 11.7 V. The dark count rate is only 123 Hz when the over-bias voltage is 1 V, and the peak photon detection efficiency (PDE) reaches 37.5% at the wavelength of 500 nm under the 0.5 V over-bias voltage. PDE exceeds 30% in the range of 460~640 nm spectral range, which has a good response in the blue band. The SPAD device provides certain design ideas for the research of fluorescence detectors.

8

White, Sebastian. "Signal processing to reduce dark noise impact in precision timing." Journal of Instrumentation 18, no. 07 (July 1, 2023): P07051. http://dx.doi.org/10.1088/1748-0221/18/07/p07051.

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Abstract We introduce a technique to mitigate the effects of low frequency noise on precision timing. The example of Dark Count Noise Rate (DCR) in Silicon Photomultipliers (SiPMs) is emphasized. This technique exploits the correlation between time shifts on the leading edge of a signal and the residual slope of the baseline (due to noise) which remains after baseline subtraction. In fast timing applications (such as for Time-of-flight particle ID) the signal arrival time is typically captured on the signal leading edge. The signal risetime is often fixed by the physics of the sensor and input circuit. Then accurate pulse timing can be achieved by correcting a leading edge threshold time (depending on a slope proportional to both the Amplitude and the risetime) to a “constant fraction” time. This compensation for time walk due to amplitude fluctuations breaks down once we introduce interference from low frequency noise on the leading edge. In this paper we demonstrate that an additional measurement of the slope at threshold can be used to correct for this noise jitter.

9

Sanzaro, Mirko, Fabio Signorelli, Paolo Gattari, Alberto Tosi, and Franco Zappa. "0.16 µm–BCD Silicon Photomultipliers with Sharp Timing Response and Reduced Correlated Noise." Sensors 18, no. 11 (November 3, 2018): 3763. http://dx.doi.org/10.3390/s18113763.

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Silicon photomultipliers (SiPMs) have improved significantly over the last years and now are widely employed in many different applications. However, the custom fabrication technologies exploited for commercial SiPMs do not allow the integration of any additional electronics, e.g., on-chip readout and analog (or digital) processing circuitry. In this paper, we present the design and characterization of two microelectronics-compatible SiPMs fabricated in a 0.16 µm–BCD (Bipolar-CMOS-DMOS) technology, with 0.67 mm × 0.67 mm total area, 10 × 10 square pixels and 53% fill-factor (FF). The photon detection efficiency (PDE) surpasses 33% (FF included), with a dark-count rate (DCR) of 330 kcps. Although DCR density is worse than that of state-of-the-art SiPMs, the proposed fabrication technology enables the development of cost-effective systems-on-chip (SoC) based on SiPM detectors. Furthermore, correlated noise components, i.e., afterpulsing and optical crosstalk, and photon timing response are comparable to those of best-in-class commercial SiPMs.

10

Minga, Joana, Paolo Brogi, Gianmaria Collazuol, Gian-Franco Dalla Betta, Pier Simone Marrocchesi, Fabio Morsani, Lucio Pancheri, Lodovico Ratti, Gianmarco Torilla, and Carla Vacchi. "A Wireless, Battery-Powered Probe Based on a Dual-Tier CMOS SPAD Array for Charged Particle Sensing." Electronics 12, no. 11 (June 5, 2023): 2549. http://dx.doi.org/10.3390/electronics12112549.

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A compact probe for charged particle imaging, with potential applications in source activity mapping and radio-guided surgery was designed and tested. The development of this technology holds significant implications for medical imaging, offering healthcare professionals accurate and efficient tools for diagnoses and treatments. To fulfill the portability requirements of these applications, the probe was designed for battery operation and wireless communication with a PC. The core sensor is a dual-layer CMOS SPAD detector, fabricated using 150 nm technology, which uses overlapping cells to produce a coincidence signal and reduce the dark count rate (DCR). The sensor is managed and interfaced with a microcontroller, and custom firmware was developed to facilitate communication with the sensor. The performance of the probe was evaluated by characterizing the on-board SPAD detector in terms of the DCR, and the results were consistent with the characterization measurements taken on the same chip samples using a purposely developed benchtop setup.

11

Rybnikov, A., N. Anfimov, M. Qu, A. Chetverikov, G. Cao, D. Fedoseev, H. Wang, et al. "Performance of the mass testing setup for arrays of silicon photomultipliers in the TAO experiment." Journal of Instrumentation 19, no. 05 (May 1, 2024): P05035. http://dx.doi.org/10.1088/1748-0221/19/05/p05035.

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Abstract Modern neutrino physics detectors often employ thousands, and sometimes even hundreds of thousands, of Silicon Photomultipliers (SiPMs). The TAO experiment [1] is a notable example that utilizes a spherical scintillator barrel with a diameter of 1.8 meters, housing approximately 130,000 SiPMs organized into 4,100 tiles. Each tile with size of 5×5 cm2 consists of a 32-SiPM array functioning as a single detector unit. To achieve an unparalleled energy resolution of 2% at 1 MeV within this volume, the SiPMs must possess cutting-edge parameters, including a photon detection efficiency (PDE) exceeding 50%, cross-talk of approximately 10%, and an extremely low dark count rate (DCR) below 50 Hz/mm2. Maintaining the setup at a negative temperature of -50°C is necessary to achieve the desired DCR. This article presents the setup and methods employed to individually characterize the mass of SiPMs across all 4,100 tiles at the specified negative temperature.

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Scott, Ryan, Wei Jiang, Xuanyu Qian, and M. Jamal Deen. "A Multi-Time-Gated SPAD Array with Integrated Coarse TDCs." Electronics 11, no. 13 (June 27, 2022): 2015. http://dx.doi.org/10.3390/electronics11132015.

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Time-gating of single-photon avalanche diodes (SPADs) was commonly used as a method to reduce dark noise in biomedical imaging applications where photon events are correlated with a reference clock. Time-gating was also used to obtain timing information of photon events by shifting the gate windows applied to a SPAD array. However, in this approach, fine timing resolution comes at the cost of a lengthened measurement time due to the large number of counts required for each shift. As a solution, we present a multi-time-gated SPAD array that simultaneously applies shifted gate windows to an array of SPADs, which has the potential to reduce the measurement time compared to a single time gate window. Compared to similar works, this design has fully integrated the multi-gate generation using shared circuitry which also functions as a coarse time-to-digital converter. The proposed array, fabricated in the TSMC 65 nm standard CMOS process, achieved a median dark count rate (DCR) of 37 kHz, 4.37 ns gate widths, 550 ps timing resolution, and a peak photon detection probability (PDP) of 42.9% at 420 nm, all at a 0.8 V excess bias.

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Diehl, I., K. Hansen, T. Vanat, G. Vignola, F. Feindt, D. Rastorguev та S. Spannagel. "Monolithic MHz-frame rate digital SiPM-IC with sub-100 ps precision and 70 μm pixel pitch". Journal of Instrumentation 19, № 01 (1 січня 2024): P01020. http://dx.doi.org/10.1088/1748-0221/19/01/p01020.

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Abstract This paper presents the design and characterization of a monolithic integrated circuit (IC) including digital silicon photomultipliers (dSiPMs) arranged in a 32 × 32 pixel matrix at 70 μm pitch. The IC provides per-quadrant time stamping and hit-map readout, and is fabricated in a standard 150-nm CMOS technology. Each dSiPM pixel consists of four single-photon avalanche diodes (SPADs) sharing a quenching and subsequent processing circuitry and has a fill factor of 30 %. A sub-100 ps precision, 12-bit time-to-digital converter (TDC) provides timestamps per quadrant with an acquisition rate of 3 MHz. Together with the hit map, the total sustained data throughput of the IC amounts to 4 Gbps. Measurements obtained in a dark, temperature-stable environment as well as by using a pulsed laser environment show the full dSiPM-IC functionality. The dark-count rate (DCR) as function of the overvoltage and temperature, the TDC resolution, differential and integral nonlinearity (DNL/INL) as well as the propagation delays across the matrix are presented. With aid of additional peripheral test structures, the main building blocks are characterized and key parameters are presented.

14

Gao, Shaochen, Duc-Tung Vu, Thibauld Cazimajou, Patrick Pittet, Martine Le Berre, Mohammadreza Dolatpoor Lakeh, Fabien Mandorlo, et al. "Shallow Trench Isolation Patterning to Improve Photon Detection Probability of Single-Photon Avalanche Diodes Integrated in FD-SOI CMOS Technology." Photonics 11, no. 6 (June 1, 2024): 526. http://dx.doi.org/10.3390/photonics11060526.

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The integration of Single-Photon Avalanche Diodes (SPADs) in CMOS Fully Depleted Silicon-On-Insulator (FD-SOI) technology under a buried oxide (BOX) layer and a silicon film containing transistors makes it possible to realize a 3D SPAD at the chip level. In our study, a nanostructurated layer created by an optimized arrangement of Shallow Trench Isolation (STI) above the photosensitive zone generates constructive interferences and consequently an increase in the light sensitivity in the frontside illumination. A simulation methodology is presented that couples electrical and optical data in order to optimize the STI trenches (size and period) and to estimate the Photon Detection Probability (PDP) gain. Then, a test chip was designed, manufactured, and characterized, demonstrating the PDP improvement due to the STI nanostructuring while maintaining a comparable Dark Count Rate (DCR).

15

Gautam, V., R. Casanova, S. Terzo, and S. Grinstein. "Development of single photon avalanche detectors for NIR light detection." Journal of Instrumentation 17, no. 12 (December 1, 2022): C12019. http://dx.doi.org/10.1088/1748-0221/17/12/c12019.

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Abstract Near-infrared (NIR) light is used in several non-invasive biomedical techniques to measure the blood flow in deep tissues. The BIOSPAD project targets the development of SPAD arrays specifically designed for Diffuse Correlation Spectroscopy (DCS) in the NIR to measure deep tissue microvascular blood flow. In the first stage of the project, single SPADs with multiplication layers buried at different depths have been designed at IFAE and produced in a 150 nm CMOS technology. In this study, we present results of the characterization of SPAD devices with an area of 50 × 50 µm2 operated with an external passive quenching circuit. We compared properties, such as Dark Count Rate (DCR) and Photon Detection Efficiency (PDE) of the different SPAD designs. The PDE for 780 nm light of SPADs with a buried multiplication layer was observed to be in the range of 10–20% with a DCR of the order of 2 kHz. The results of these first prototypes are promising and are being followed up by the development of a new generation of CMOS SPADs designed to further improve the NIR light response.

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Wang, Wei, Ting Chen, Yongchun He, Mengjia Huang, Hao Yang, Guanyu Wang, Zhenglin Yang, and Jun Yuan. "The design and characterization of high photon detection efficiency CMOS single-photon avalanche diode." Modern Physics Letters B 32, no. 25 (September 5, 2018): 1850302. http://dx.doi.org/10.1142/s0217984918503025.

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The high photon detection efficiency (PDE) single-photon avalanche diode (SPAD) designed with a low voltage standard 0.18 [Formula: see text]m CMOS process is investigated in detail. The proposed CMOS SPAD is with P+/N-well junction structure, and its multiplication region is surrounded by a virtual guard ring, with which the premature edge avalanche breakdown can be prevented. The analytical and simulation results show that the CMOS SPAD has a uniform electric field distribution in P+/N-well junction, and the breakdown voltage is as low as 8.2 V, the PDE is greater than 40% at the wavelength range of 650–950 nm, at a low excess bias voltage (light intensity is about 0.001 W/cm2), and the peak PDE at 800 nm is about 48%, the relatively low dark count rate (DCR) of 1.4 KHz is obtained.

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Morimoto, Kazuhiro, and Edoardo Charbon. "A Scaling Law for SPAD Pixel Miniaturization." Sensors 21, no. 10 (May 15, 2021): 3447. http://dx.doi.org/10.3390/s21103447.

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The growing demands on compact and high-definition single-photon avalanche diode (SPAD) arrays have motivated researchers to explore pixel miniaturization techniques to achieve sub-10 μm pixels. The scaling of the SPAD pixel size has an impact on key performance metrics, and it is, thereby, critical to conduct a systematic analysis of the underlying tradeoffs in miniaturized SPADs. On the basis of the general assumptions and constraints for layout geometry, we performed an analytical formulation of the scaling laws for the key metrics, such as the fill factor (FF), photon detection probability (PDP), dark count rate (DCR), correlated noise, and power consumption. Numerical calculations for various parameter sets indicated that some of the metrics, such as the DCR and power consumption, were improved by pixel miniaturization, whereas other metrics, such as the FF and PDP, were degraded. Comparison of the theoretically estimated scaling trends with previously published experimental results suggests that the scaling law analysis is in good agreement with practical SPAD devices. Our scaling law analysis could provide a useful tool to conduct a detailed performance comparison between various process, device, and layout configurations, which is essential for pushing the limit of SPAD pixel miniaturization toward sub-2 μm-pitch SPADs.

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Wang, Wei, Xiaoyuan Bao, Li Chen, Ting Chen, Guanyu Wang та Jun Yuan. "High photon detection efficiency single photon avalanche diode in 0.18 μm standard CMOS process". Modern Physics Letters B 31, № 17 (8 червня 2017): 1750193. http://dx.doi.org/10.1142/s0217984917501937.

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This paper proposed a single photon avalanche diodes (SPADs) designed with 0.18 [Formula: see text] standard CMOS process. One of the major challenges in CMOS SPADs is how to raise the low photon detection efficiency (PDE). In this paper, the device structure and process parameters of the CMOS SPAD are optimized so as to improve PDE properties which have been investigated in detail. The CMOS SPADs are designed in p+/n-well/deep n-well (DNW) structure with the p-sub and the p-well guard ring (GR). The simulation results show that with the p-well GR, the quantum efficiency (QE) is about 80% with the breakdown voltage of 12.7 V, the unit responsivity is as high as 0.38 A/W and the PDE of 51% and 53% is obtained when the excess bias is at 1 V and 2 V, respectively. The dark count rate (DCR) is 6.2 kHz when bias voltage is 14 V. With the p-sub GR, the breakdown voltage is 13 V, the unit responsivity is up to 0.26 A/W, the QE is 58%, the PDE is 33% and 37% at excess bias of 1 V and 2 V, respectively. The DCR is 3.4 kHz at reverse bias voltage of 14 V.

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Jegannathan, Gobinath, Hans Ingelberts, and Maarten Kuijk. "Current-Assisted Single Photon Avalanche Diode (CASPAD) Fabricated in 350 nm Conventional CMOS." Applied Sciences 10, no. 6 (March 22, 2020): 2155. http://dx.doi.org/10.3390/app10062155.

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A current-assisted single-photon avalanche diode (CASPAD) is presented with a large and deep absorption volume combined with a small p-n junction in its middle to perform avalanche trigger detection. The absorption volume has a drift field that serves as a guiding mechanism to the photo-generated minority carriers by directing them toward the avalanche breakdown region of the p-n junction. This drift field is created by a majority current distribution in the thick (highly-resistive) epi-layer that is present because of an applied voltage bias between the p-anode of the avalanching region and the perimeter of the detector. A first CASPAD device fabricated in 350-nm CMOS shows functional operation for NIR (785-nm) photons; absorbed in a volume of 40 × 40 × 14 μm3. The CASPAD is characterized for its photon-detection probability (PDP), timing jitter, dark-count rate (DCR), and after pulsing.

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Zhang, Chunling, Liying Zhang, Ru Yang, Kun Liang, and Dejun Han. "Time-Correlated Raman and Fluorescence Spectroscopy Based on a Silicon Photomultiplier and Time-Correlated Single Photon Counting Technique." Applied Spectroscopy 67, no. 2 (February 2013): 136–40. http://dx.doi.org/10.1366/12-06736.

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We report a time-correlated Raman spectroscopy technique based on a silicon photomultiplier (SiPM) and a time-correlated single photon counting (TCSPC) technique to exploit the natural temporal separation between Raman and fluorescence phenomena to alleviate the high fluorescence background with conventional Raman detection. The TCSPC technique employed can greatly reduce the effect of high dark count rate (DCR) and crosstalk of SiPM that seriously hinder its application in low light level detection. The operating principle and performance of the 400 ps time resolution system are discussed along with the improvement of the peak-to-background ratio (PBR) for bulk trinitrotoluene (TNT) Raman spectrum relative to a commercial Raman spectrometer with charge coupled device (CCD). The fluorescence lifetime for solid TNT and Surface Enhanced Raman Scattering (SERS) spectrum for 10−6 mol/L trace TNT have also been obtained by this system, showing excellent versatility and convenience in spectroscopy measurement.

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Merzi, Stefano, Fabio Acerbi, Massimo Capasso, Alberto Mazzi, Giovanni Paternoster, Giancarlo Pepponi, Nicola Zorzi, and Alberto Gola. "Low-energy X-ray spectroscopy with RGB-HD SiPMs coupled to CsI(Tl) scintillator." Journal of Instrumentation 17, no. 11 (November 1, 2022): P11007. http://dx.doi.org/10.1088/1748-0221/17/11/p11007.

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Abstract The continuous improvement of Silicon Photomultiplier (SiPM) characteristics opens new perspectives for the application of these detectors in middle to low energy X-ray scintillation light readout. Compared to traditional PET detectors this application poses an additional challenge because of the much lower number of photons generated in the scintillator. Many SiPM characteristics influence the energy resolution of the detected radiation, including Photon Detection Efficiency (PDE), primary noise and Excess Noise Factor (ENF). The most recent development of the RGB-HD SiPM technology at Fondazione Bruno Kessler (FBK, Italy) provides a PDE up to 40% at 550 nm while keeping the Dark Count Rate (DCR) below 500 kc.p.s./mm2. A low DCR value is fundamental in improving the energy resolution for soft X-rays. In this work we coupled a 1×1 mm2 RGB-HD SiPM to a 0.9×0.9×2 mm3 CsI(Tl) crystal allowing the detection of 55Fe 5.9 keV photons with an energy resolution of 39% FWHM. A 4×4 mm2 RGB-HD SiPM with a 3×3×5 mm3 CsI(Tl) was used for the readout of a 57Co source (6.4 keV, 14.4 keV and 122 keV) in order to prove the dynamic range of the system. The energy resolution of these three peaks shows different trends with respect to the SiPM bias and to the signal integration time. This is related to the fact that SiPM parameters such as PDE, DCR and ENF, and readout parameters such as integration time, become more or less relevant depending on the energy of the primary photon.

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Liu, Danlu, Ming Li, Tang Xu, Jie Dong, Yuming Fang, and Yue Xu. "Study of the influence of virtual guard ring width on the performance of SPAD detectors in 180 nm standard CMOS technology." Journal of Semiconductors 44, no. 11 (November 1, 2023): 114102. http://dx.doi.org/10.1088/1674-4926/44/11/114102.

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Abstract The influence of the virtual guard ring width (GRW) on the performance of the p-well/deep n-well single-photon avalanche diode (SPAD) in a 180 nm standard CMOS process was investigated. TCAD simulation demonstrates that the electric field strength and current density in the guard ring are obviously enhanced when GRW is decreased to 1 μm. It is experimentally found that, compared with an SPAD with GRW = 2 μm, the dark count rate (DCR) and afterpulsing probability (AP) of the SPAD with GRW = 1 μm is significantly increased by 2.7 times and twofold, respectively, meanwhile, its photon detection probability (PDP) is saturated and hard to be promoted at over 2 V excess bias voltage. Although the fill factor (FF) can be enlarged by reducing GRW, the dark noise of devices is negatively affected due to the enhanced trap-assisted tunneling (TAT) effect in the 1 μm guard ring region. By comparison, the SPAD with GRW = 2 μm can achieve a better trade-off between the FF and noise performance. Our study provides a design guideline for guard rings to realize a low-noise SPAD for large-array applications.

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Qian, Xuanyu, Wei Jiang, Ahmed Elsharabasy, and M. Jamal Deen. "Modeling for Single-Photon Avalanche Diodes: State-of-the-Art and Research Challenges." Sensors 23, no. 7 (March 24, 2023): 3412. http://dx.doi.org/10.3390/s23073412.

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With the growing importance of single-photon-counting (SPC) techniques, researchers are now designing high-performance systems based on single-photon avalanche diodes (SPADs). SPADs with high performances and low cost allow the popularity of SPC-based systems for medical and industrial applications. However, few efforts were put into the design optimization of SPADs due to limited calibrated models of the SPAD itself and its related circuits. This paper provides a perspective on improving SPAD-based system design by reviewing the development of SPAD models. First, important SPAD principles such as photon detection probability (PDP), dark count rate (DCR), afterpulsing probability (AP), and timing jitter (TJ) are discussed. Then a comprehensive discussion of various SPAD models focusing on each of the parameters is provided. Finally, important research challenges regarding the development of more advanced SPAD models are summarized, followed by the outlook for the future development of SPAD models and emerging SPAD modeling methods.

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Yang, Jian, Yang Wang, Xiang-Liang Jin, Yan Peng, and Jun Luo. "Design and Fabrication of Near Ultraviolet Enhanced Composite Single Photon Avalanche Diode for Fluorescence Lifetime Imaging." Journal of Nanoelectronics and Optoelectronics 17, no. 2 (February 1, 2022): 267–74. http://dx.doi.org/10.1166/jno.2022.3193.

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The near ultraviolet photon detection probability (PDP) of single photon avalanche diodes (SPADs) is very important for the fluorescence lifetime imaging. However, the PDP of traditional SPAD (T-SPAD) devices in the near-ultraviolet is not ideal, which is difficult to meet the requirements of fluorescence lifetime imaging. In response to the above problems, this paper realizes a near ultraviolet enhanced composite SPAD (NUEC-SPAD) based on photogate. The device is based on a photogate and a PN junction formed by P+/N-Well to detect photons. Therefore, the PDP of the device in the near ultraviolet is greatly improved. In addition, the shallow trench isolation (STI) and multiplication regions are isolated by photogate, and the dark count rate (DCR) of the device is greatly reduced. The principle of NUEC-SPAD device is simulated and verified based on the Technology-Computer-Aided-Design (TCAD). The NUEC-SPAD device and the T-SPAD device are fabricated based on the 0.18 μm BCD process. The experimental data show that the avalanche breakdown voltage of NUEC-SPAD device is 12 V. The device has good PDP in the range of 360 nm to 700 nm. Under the excess bias voltage of 0.5 V, the PDP of NUEC-SPAD device is 43.81% (@460 nm), which is 45.50% higher than that of T-SPAD device. Under the excess bias voltage of 1 V, the DCR of NUEC-SPAD device is only 0.24 Hz/μm2.

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Gola, Alberto, Fabio Acerbi, Massimo Capasso, Marco Marcante, Alberto Mazzi, Giovanni Paternoster, Claudio Piemonte, Veronica Regazzoni, and Nicola Zorzi. "NUV-Sensitive Silicon Photomultiplier Technologies Developed at Fondazione Bruno Kessler." Sensors 19, no. 2 (January 14, 2019): 308. http://dx.doi.org/10.3390/s19020308.

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Different applications require different customizations of silicon photomultiplier (SiPM) technology. We present a review on the latest SiPM technologies developed at Fondazione Bruno Kessler (FBK, Trento), characterized by a peak detection efficiency in the near-UV and customized according to the needs of different applications. Original near-UV sensitive, high-density SiPMs (NUV-HD), optimized for Positron Emission Tomography (PET) application, feature peak photon detection efficiency (PDE) of 63% at 420 nm with a 35 um cell size and a dark count rate (DCR) of 100 kHz/mm2. Correlated noise probability is around 25% at a PDE of 50% at 420 nm. It provides a coincidence resolving time (CRT) of 100 ps FWHM (full width at half maximum) in the detection of 511 keV photons, when used for the readout of LYSO(Ce) scintillator (Cerium-doped lutetium-yttrium oxyorthosilicate) and down to 75 ps FWHM with LSO(Ce:Ca) scintillator (Cerium and Calcium-doped lutetium oxyorthosilicate). Starting from this technology, we developed three variants, optimized according to different sets of specifications. NUV-HD–LowCT features a 60% reduction of direct crosstalk probability, for applications such as Cherenkov telescope array (CTA). NUV-HD–Cryo was optimized for cryogenic operation and for large photosensitive areas. The reference application, in this case, is the readout of liquid, noble-gases scintillators, such as liquid Argon. Measurements at 77 K showed a remarkably low value of the DCR of a few mHz/mm2. Finally, vacuum-UV (VUV)-HD features an increased sensitivity to VUV light, aiming at direct detection of photons below 200 nm. PDE in excess of 20% at 175 nm was measured in liquid Xenon. In the paper, we discuss the specifications on the SiPM related to different types of applications, the SiPM design challenges and process optimizations, and the results from the experimental characterization of the different, NUV-sensitive technologies developed at FBK.

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Jegannathan, Gobinath, Thomas Van den Dries, and Maarten Kuijk. "Current-Assisted SPAD with Improved p-n Junction and Enhanced NIR Performance." Sensors 20, no. 24 (December 11, 2020): 7105. http://dx.doi.org/10.3390/s20247105.

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Single-photon avalanche diodes (SPADs) fabricated in conventional CMOS processes typically have limited near infra-red (NIR) sensitivity. This is the consequence of isolating the SPADs in a lowly-doped deep N-type well. In this work, we present a second improved version of the “current-assisted” single-photon avalanche diode, fabricated in a conventional 350 nm CMOS process, having good NIR sensitivity owing to 14 μm thick epilayer for photon absorption. The presented device has a photon absorption area of 30 × 30 µm2, with a much smaller central active area for avalanche multiplication. The photo-electrons generated in the absorption area are guided swiftly towards the central area with a drift field created by the “current-assistance” principle. The central active avalanche area has a cylindrical p-n junction as opposed to the square geometry from the previous iteration. The presented device shows improved performance in all aspects, most notably in photon detection probability. The p-n junction capacitance is estimated to be ~1 fF and on-chip passive quenching with source followers is employed to conserve the small capacitance for bringing monitoring signals off-chip. Device physics simulations are presented along with measured dark count rate (DCR), timing jitter, after-pulsing probability (APP) and photon detection probability (PDP). The presented device has a peak PDP of 22.2% at a wavelength of 600 nm and a timing jitter of 220 ps at a wavelength of 750 nm.

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Gu, Huangling, and Long Wang. "A High-Detection-Efficiency Optoelectronic Device for Trace Cadmium Detection." Sensors 22, no. 15 (July 28, 2022): 5630. http://dx.doi.org/10.3390/s22155630.

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Cadmium (Cd) pollution in soil is a serious threat to food security and human health, while, currently, the most widely used detection methods cannot accurately reflect the content of heavy metals in soil. Soil heavy metal detection combined with microelectronic sensors has become an important means of environmental heavy metal pollution prevention and control. X-ray Fluorescence spectrometry (XRF) can capture the excitation spectrum of metal elements, which is often used to detect Cd (II). However, due to the lack of high-performance optoelectronic devices, the analysis accuracy of the system cannot meet the requirements. Therefore, this study proposes a high-detection-efficiency photodiode (HDEPD) which can effectively improve the detection accuracy of the analyzer. The HDEPD is manufactured based on a 0.18 μm standard complementary metal-oxide-semiconductor (CMOS) process. The volt-ampere curve, spectral response and noise characteristics of the device are obtained by constructing a test circuit combined with a spectral detection system. The test results show that the threshold voltage of HDEPD is 12.15 V. When the excess bias voltage increases from 1 V to 3 V, the spectral response peak of the device appears at 500 nm, and the photon detection probability (PDP) increases from 41.7% to 52.8%. The dark count rate (DCR) is 31.9 Hz/μm2 at a 3 V excess bias voltage. Since the excitation spectrum peak of Cd (II) is between 500 nm and 600 nm, the wavelength response range of HDEPD fully meets the detection requirements of Cd (II).

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Shi Zhu, 石. 柱., 代. 千. Dai Qian, 宋海智 Song Haizhi, 谢和平 Xie Heping, 覃文治 Qin Wenzhi, 邓. 杰. Deng Jie, 柯尊贵 Ke Zungui, and 孔繁林 Kong Fanlin. "Low dark count rate InGaAsP/InP SPAD." Infrared and Laser Engineering 46, no. 12 (2017): 1220001. http://dx.doi.org/10.3788/irla201746.1220001.

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Gaskill, D. Kurt, Jun Hu, X. Xin, Jian Hui Zhao, Brenda L. VanMil, Rachael L. Myers-Ward, and Charles R. Eddy. "Proton Irradiation of 4H-SiC Ultraviolet Single Photon Avalanche Diodes." Materials Science Forum 679-680 (March 2011): 551–54. http://dx.doi.org/10.4028/www.scientific.net/msf.679-680.551.

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The effects of proton irradiation on uv 4H-SiC single photon avalanche photodiodes (SPADs) are reported. The SPADs, grown by chemical vapor deposition, were designed for uv operation with dark count rates (DCR) of about 30 kHz and single photon detection efficiency (SPDE) of 4.89%. The SPADs were irradiated with 2 MeV protons to a fluence of 1012 cm-2. After irradiation, the I-V characteristics show forward voltage (<1.9 V) generation-recombination currents 2 to 3 times higher than before irradiation. Single photon counting measurements imply generation-recombination centers created in the band gap after irradiation. For threshold voltage ranging from 23 to 26 mV, the 4H-SiC SPAD showed low DCR (<54 kHz) and high SPDE (>1%) after irradiation. The SPADs demonstrated proton radiation tolerance for geosynchronous space applications.

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Real, Diego, David Calvo, Juan de Dios Zornoza, Mario Manzaneda, Rebecca Gozzini, Carlos Ricolfe-Viala, Rafael Lajara, and Francisco Albiol. "Fast Coincidence Filter for Silicon Photomultiplier Dark Count Rate Rejection." Sensors 24, no. 7 (March 25, 2024): 2084. http://dx.doi.org/10.3390/s24072084.

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Silicon Photomultipliers find applications across various fields. One potential Silicon Photomultiplier application domain is neutrino telescopes, where they may enhance the angular resolution. However, the elevated dark count rate associated with Silicon Photomultipliers represents a significant challenge to their widespread utilization. To address this issue, it is proposed to use Silicon Photomultipliers and Photomultiplier Tubes together. The Photomultiplier Tube signals serve as a trigger to mitigate the dark count rate, thereby preventing undue saturation of the available bandwidth. This paper presents an investigation into a fast and resource-efficient method for filtering the Silicon Photomultiplier dark count rate. A low-resource and fast coincident filter has been developed, which removes the Silicon Photomultiplier dark count rate by using as a trigger the Photomultiplier Tube input signals. The architecture of the coincidence filter, together with the first results obtained, which validate the effectiveness of this method, is presented.

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Panglosse, Aymeric, Philippe Martin-Gonthier, Olivier Marcelot, Cedric Virmontois, Olivier Saint-Pe, and Pierre Magnan. "Dark Count Rate Modeling in Single-Photon Avalanche Diodes." IEEE Transactions on Circuits and Systems I: Regular Papers 67, no. 5 (May 2020): 1507–15. http://dx.doi.org/10.1109/tcsi.2020.2971108.

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Ratti, Lodovico, P. Brogi, G. Collazuol, G. F. Dalla Betta, A. Ficorella, P. S. Marrocchesi, L. Pancheri, and C. Vacchi. "Dark Count Rate Distribution in Neutron-Irradiated CMOS SPADs." IEEE Transactions on Electron Devices 66, no. 12 (December 2019): 5230–37. http://dx.doi.org/10.1109/ted.2019.2944482.

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Xiong, Anwen, XingYa Li, Nong Yang, Xiangjiao Meng, Qitao Yu, Liping Tan, Qiming Wang, et al. "Efficacy and safety of SY-5007, a highly potent and selective RET inhibitor, in Chinese patients with advanced RET-fusion positive non-small cell lung cancer (NSCLC): Results from a multicenter, single-arm, phase II study." Journal of Clinical Oncology 42, no. 16_suppl (June 1, 2024): 3106. http://dx.doi.org/10.1200/jco.2024.42.16_suppl.3106.

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3106 Background: Lung cancer is the leading cause for all cancer-related death, with NSCLC accounting for 85% of all cases. The oncogenic RET-fusion is identified in 1-2% of NSCLC patients. Several RET inhibitors have been approved. This pivotal phase II study aimed to evaluate the efficacy and safety of SY-5007, a novel, highly selective RET inhibitor, in Chinese patients with advanced, positive RET NSCLC. Methods: This trial enrolled two cohorts of patients with RET-fusion positive NSCLC. Cohort 1 comprised treatment-naive patients, and cohort 2 included those previously treated with systemic therapy. Both cohorts received oral SY-5007 at 160 mg twice daily in a 28-day cycle. Primary endpoint was overall response rate (ORR) assessed by blinded independent central review (BICR) per RESICST v1.1. Secondary endpoints included ORR assessed by investigators, disease control rate (DCR), progression-free survival (PFS), overall survival (OS), and safety. Results: As of the data cutoff date on January 16, 2024, the trial enrolled 105 patients, with a median follow-up of 4.57 months (95% confidence interval [CI] 0.2-10.3). The BICR-assessed overall ORR was 77.1% (95% CI 67.9-84.8) and DCR was 83.8% (95% CI 75.3-90.3). The investigator-assessed overall ORR was 77.1% (95% CI 67.9-84.8) and DCR was 90.5% (95% CI 83.2-95.3). In treatment-naive patients (cohort 1, n=56), SY-5007 showed an ORR of 83.9% (95% CI 71.4-92.4) and a DCR of 91.1% (95% CI 80.4-97.0). In pre-treated patients (cohort 2, n=49), SY-5007 exhibited an ORR of 69.4% (95% CI 54.6-81.7) and a DCR of 89.8% (95% CI 77.8-96.6). For 29 patients with baseline brain metastasis, the ORR and DCR were 69.0% (95% CI 49.2-84.7) and 86.2% (95% CI 68.3-96.1). Meanwhile, the ORR and DCR for 76 patients without baseline brain metastasis were 80.3% (95% CI 69.5-88.5) and 92.1% (95% CI 83.6-97.0). Among 10 patients with baseline intracranial target lesions, intracranial ORR and DCR were 80.0% (95% CI 44.4-97.5) and 100% (95% CI 47.8-100). Median PFS, DoR or OS were not reached. Treatment-related adverse events (TRAEs) were reported in 96.2% of patients, with common events (≥ 30%) including increased AST, increased ALT, decreased neutrophil count, decreased white blood cell count and decreased platelet count. Grade ≥ 3 TRAEs and treatment-related serious adverse events were observed in 42.9% and 10.5% of patients. TRAE-induced dose interruption and dose reduction occurred in 39.0% and 23.8% of patients, respectively. TRAEs led to SY-5007 discontinuation in two patients (1.9%), with no deaths due to TRAE. Conclusions: SY-5007 demonstrated promising efficacy and safety for advanced NSCLC with positive RET. Clinical trial information: NCT05278364 .

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Naka, Angelica, and Midori Kurahashi. "Sedimentation Rate of Dunaliella salina in Dark Conditions." Applied Biosciences 2, no. 1 (January 10, 2023): 14–20. http://dx.doi.org/10.3390/applbiosci2010002.

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Microalgae are a source of carbohydrates, proteins and lipids. Thus, they can be considered as raw material to transition from current fossil fuel-based refineries to biorefineries. Microalgae harvesting is considered a major challenge in biomass production. There are several harvesting techniques, but the majority of them are either expensive or not effective. The harvesting method that we propose is sedimentation-induced by light blockage, taking advantage of the motility characteristics of certain microalgae. In this research, the halophilic microalgae Dunaliella salina was selected. Experiments were conducted under light and dark conditions to compare the sedimentation rates. Sedimentation behavior was measured by collecting data on the optical density and cell count under both light and dark conditions. The results showed that, under light conditions, the cell count in the middle of the flask decreased from 1 × 106 cell/mL to 5 × 104 cell/mL after 50 days. Under dark conditions sedimentation took less than 10 days for complete settlement. Leaving Dunaliella salina under dark conditions may constitute a promising harvest method as this provides a high recovery rate and requires low energy.

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Drukier, A. K., K. Freese, and D. N. Spergel. "Detecting Cold Dark Matter Candidates." Symposium - International Astronomical Union 117 (1987): 490. http://dx.doi.org/10.1017/s0074180900150703.

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We consider the use of superheated superconducting colloids as detectors of weakly interacting galactic halo candidate particles (e.g. photinos, massive neutrinos, and scalar neutrinos). These low temperature detectors are sensitive to the deposition of a few hundreds of eV's. The recoil of a dark matter particle off of a superheated superconducting grain in the detector causes the grain to make a transition to the normal state. Their low energy threshold makes this class of detectors ideal for detecting massive weakly interacting halo particles.We discuss realistic models for the detector and for the galactic halo. We show that the expected count rate (≈103 count/day for scalar and massive neutrinos) exceeds the expected background by several orders of magnitude. For photinos, we expect ≈1 count/day, more than 100 times the predicted background rate. We find that if the detector temperature is maintained at 50 mK and the system noise is reduced below 5 × 10−4 flux quanta, particles with mass as low as 2 GeV can be detected. We show that the earth's motion around the Sun can produce a significant annual modulation in the signal.

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Prochazka, Ivan, Josef Blazej, and Jan Kodet. "Effective dark count rate reduction by modified SPAD gating circuit." Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 787 (July 2015): 212–15. http://dx.doi.org/10.1016/j.nima.2014.12.001.

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Wilson, S. T., S. Fargher, R. Foster, M. Malek, M. Needham, A. Scarff, and G. D. Smith. "Characterisation of the temperature-dependent dark rate of Hamamatsu R7081-100 10” photomultiplier tubes." Journal of Instrumentation 18, no. 08 (August 1, 2023): P08017. http://dx.doi.org/10.1088/1748-0221/18/08/p08017.

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Abstract Dark noise is a dominant background in photomultiplier tubes (PMTs), which are commonly used in liquid-filled particle detectors for single-photon detection to see the results of particle interactions. A major contribution to dark noise is thermionic emission from the photocathode. The dark noise of Hamamatsu R7081-100 PMTs is characterised in a temperature and purity controlled water tank, with the thermionic emission contribution isolated. The results suggest that the intrinsic dark rate of PMTs does not depend on the medium, but does follow Richardson's law of thermionic emission. There are external contributions to the overall observed PMT count rate identified, but the intrinsic PMT dark rate in water matches that measured in air.

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Liu, Liping, Zhe-Yu Hu, Ning Xie, Xiaohong Yang, Huawu Xiao, Jing Li, Can Tian, et al. "Eribulin mesylate versus eribulin plus anlotinib in patients with advanced or metastatic breast cancer: Results of a phase II study." Journal of Clinical Oncology 40, no. 16_suppl (June 1, 2022): 1094. http://dx.doi.org/10.1200/jco.2022.40.16_suppl.1094.

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1094 Background: Eribulin mesylate is a structurally simplified, synthetic, macrocyclic ketone analogue of Halichondrin B. We investigated the efficacy and safety of eribulin monotherapy versus eribulin plus the oral anti-angiogenesis inhibitor anlotinib in patients with advanced or metastatic breast cancer. Methods: This Phase II study included adult Chinese patients with locally advanced or metastatic breast cancer previously treated with at least two chemotherapy regimens, including both anthracycline- and taxane-based therapy (NCT05206656). Patients were randomized (1:1) to receive eribulin (1.4 mg/m2, intravenously, on days 1−8), alone or in combination with anlotinib (12 mg orally once daily), in 21-day cycles. The primary endpoint was investigator-assessed disease control rate (DCR), per RECIST version 1.1. Key secondary endpoints included objective response rate (ORR), progression-free survival (PFS) and safety. Results: Between February 12, 2020, and July 22, 2021, 56 patients were randomized to eribulin (n=32) or eribulin plus anlotinib (n=24) (Table). Sites of metastasis were: bone (60.7%), lung (52.7%), liver (53.6%), lymph nodes (73.2%) and soft tissue (7.1%). Among all patients, the DCR was 66.7% versus 100% (treatment difference, 33.3%; P=0.007), the ORR was 37.0% versus 38.9%, and the median PFS was 3.7 months versus 9.7 months (adjusted hazard ratio, 0.20; 95% CI, 0.04 to 0.91; P=0.04) for patients receiving eribulin versus eribulin plus anlotinib, respectively. Among 36 (64.3%) patients with triple-negative breast cancer, the DCR was 55.6% versus 72.2% (treatment difference, 16.7%; P=0.300) and the median PFS was 3.6 months versus 9.7 months (log rank P=0.030) with eribulin alone versus eribulin plus anlotinib, respectively. The most frequent grade 3-4 adverse events in the eribulin and eribulin plus anlotinib groups were decreased neutrophil count (25.0% [n=8] vs. 29.2% [n=7]) elevated transaminase (6.3% [n=2] vs. 0.0%) and decreased thrombocyte count (3.1% [n=1] vs. 0.0%), respectively. Conclusions: Eribulin plus anlotinib was associated with a significantly better DCR, ORR and PFS than eribulin monotherapy in patients with locally advanced or metastatic breast cancer previously treated with anthracyclines and taxanes. Clinical trial information: NCT05206656. [Table: see text]

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Jiang, Zefei, Tao Sun, Xiaojia Wang, Qiang Liu, Min Yan, Zhongsheng Tong, Cuizhi Geng, et al. "A multiple center, open-label, single-arm, phase II clinical trial of MRG002, an HER2-targeted antibody-drug conjugate, in patients with HER2-low expressing advanced or metastatic breast cancer." Journal of Clinical Oncology 40, no. 16_suppl (June 1, 2022): 1102. http://dx.doi.org/10.1200/jco.2022.40.16_suppl.1102.

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1102 Background: MRG002 is a novel HER2-targeted ADC, composed of a sugar-modified trastuzumab, MMAE payload and a cleavable vc-linker. MRG002 was effective in HER2-low expressing breast cancer in preclinical studies. Hence, we conducted the phase II study to evaluate the safety and anti-tumor efficacy of MRG002 in HER-low breast cancer. Methods: HER2 low tumor expression was determined by a central lab and had to be immunohistochemistry (IHC)1+ or 2+/ISH-. Eligible patients had advanced/metastatic HER2-low expressing breast cancer that failed standard therapies. MRG002 was administered intravenously once every 3 weeks at the dose of 2.6 mg/kg, until disease progression or unacceptable toxicity which ever occurred first. The primary endpoint was objective response rate (ORR) assessed by independent review committee (IRC). The secondary endpoints were progression-free survival (PFS), disease control rate (DCR), and safety. Results: A total of 56 female patients with HER2-low advanced or metastatic breast cancer were enrolled at the time of data cut-off (Dec 31, 2021) and had received at least one cycle of MRG002. The median age was 55 (30-72) years. Most patients were HER2 IHC1+ (83.9%), hormone receptor positive (HR+) (85.7%), and with a ECOG PS of 1 (57.1%). Twenty-eight patients (50.0%) had received at least 2 lines of chemotherapy and the median treatment was 3. Forty-one patients (73.2%) had visceral metastasis and 31 patients (55.4%) had bone metastasis. The ORR and DCR in 49 evaluable patients were 34.7% and 75.5%, with 17 PR, 20 SD and 12 PD. Subgroup analysis indicated that the ORR was 39.5% (15/38) and DCR was 76.3% (29/38) among the evaluable patients with visceral metastasis. The tumor responses were similar in both the HER2 IHC 1+ and IHC 2+ subgroups, as is 34.1% and 37.5% respectively, which might be attributed to fewer IHC 2+ enrollment in this trial. Although only 8 HR- subjects enrolled in our study, the ORR (37.5%) and DCR (62.5%) is promising in these triple negative BC patients post to ≥2 line therapies. Most common treatment related adverse events (TRAEs) were grade 1 or 2. The most common TRAEs (≥20%) were neutrophil count decreased (53.6%), white blood cell count decreased (48.2%), AST increased (46.4%), alopecia and ALT increased (39.3%), blood lactate dehydrogenase increased(33.9%), GGT increased (32.1%), nausea (32.1%), vomiting (23.2%), constipation (23.2%), diarrhea(23.2%) and hyperglycemia (21.4%). Most common grade ≥3 TRAE(≥10%) was neutrophil count decreased(14.3%). No patients died due to MRG002. Conclusions: MRG002 shows promising efficacyand well tolerated in patients with HER2-low breast cancer. Further evaluation is underway. Clinical trial information: NCT04742153.

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VERT, ALEXEY, STANSILAV SOLOVIEV, JODY FRONHEISER, and PETER SANDVIK. "SOLAR-BLIND SINGLE-PHOTON 4H-SiC AVALANCHE PHOTODIODES." International Journal of High Speed Electronics and Systems 19, no. 01 (March 2009): 85–92. http://dx.doi.org/10.1142/s0129156409006114.

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A solar blind 4 H - SiC single photon avalanche diode (SPAD) is reported. The SPAD with separate absorption and multiplication layers was designed for operation with low dark counts. A thin film optical filter deposited on a sapphire window of the device package provided sensitivity in the wavelength range between 240 and 280 nm with a very high solar photon rejection ratio. An estimated dark current of 0.4 pA (0.75 nA/cm2) at a gain of 1000 was measured on a device with an effective mesa diameter of 260 µm. A single photon detection efficiency of 9% (linear mode) and 9.5% (gated Geiger mode) were achieved at a wavelength of 266 nm for the same device. Corresponding dark count rate and dark count probability were 600 Hz and 4×10-4.

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Liu Yanxin, 刘岩鑫, 范青 Fan Qing, 李翔艳 Li Xiangyan, 李少康 Li Shaokang, 王勤霞 Wang Qinxia, 李刚 Li Gang, 张鹏飞 Zhang Pengfei, and 张天才 Zhang Tiancai. "Realization of Silicon Single-Photon Detector with Ultra-Low Dark Count Rate." Acta Optica Sinica 40, no. 10 (2020): 1004001. http://dx.doi.org/10.3788/aos202040.1004001.

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Bérard, P., M. Couture, P. Deschamps, F. Laforce, and H. Dautet. "Characterization study of a new UV–SiPM with low dark count rate." Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 695 (December 2012): 35–39. http://dx.doi.org/10.1016/j.nima.2011.11.040.

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Shibata, Hiroyuki, Kentaro Fukao, Naoto Kirigane, Shinichi Karimoto, and Hideki Yamamoto. "SNSPD With Ultimate Low System Dark Count Rate Using Various Cold Filters." IEEE Transactions on Applied Superconductivity 27, no. 4 (June 2017): 1–4. http://dx.doi.org/10.1109/tasc.2016.2631947.

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Xiang, Gao, Sun Shi-Hai, and Liang Lin-Mei. "General Theory of Decoy-State Quantum Cryptography with Dark Count Rate Fluctuation." Chinese Physics Letters 26, no. 10 (September 29, 2009): 100307. http://dx.doi.org/10.1088/0256-307x/26/10/100307.

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Shibata, Hiroyuki, Kaoru Shimizu, Hiroki Takesue, and Yasuhiro Tokura. "Ultimate low system dark-count rate for superconducting nanowire single-photon detector." Optics Letters 40, no. 14 (July 15, 2015): 3428. http://dx.doi.org/10.1364/ol.40.003428.

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Zhou, Yuan-yuan, Hua Jiang, and Ying-jian Wang. "Practical decoy-state quantum key distribution method considering dark count rate fluctuation." Optoelectronics Letters 8, no. 5 (September 2012): 384–88. http://dx.doi.org/10.1007/s11801-012-2026-y.

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Rebuzzi, Sara Elena, Francesco Atzori, Marilena Di Napoli, Marco Stellato, Marco Messina, Silvia Chiellino, Francesca Vignani та ін. "Baseline and early change of systemic inflammation index (bSII and ΔSII) as prognostic factors in metastatic renal cell carcinoma (mRCC) patients treated with Nivolumab: Final results of the Meet-URO 15 (I-BIO-REC) study." Journal of Clinical Oncology 38, № 15_suppl (20 травня 2020): 5072. http://dx.doi.org/10.1200/jco.2020.38.15_suppl.5072.

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5072 Background: Biomarkers to select mRCC patients most likely to benefit to immunotherapy are still needed. The retrospective multicentre Meet-URO-15 study evaluated the prognostic role of peripheral blood cells in mRCC patients treated with Nivolumab. Methods: Complete blood count was collected at the first four cycles of Nivolumab. The primary endpoint was median overall survival (mOS) according to baseline neutrophil-to-lymphocyte ratio. Secondary analyses included bSII defined as platelet x NLR (cutoff = 1375) and ΔSII defined as the difference between SII at 2ndcycle and bSII (median used as cutoff = 383). Results: From October 2015 to October 2019, 470 patients started Nivolumab as 2nd(67%), 3rd(22%) and > 3rd(11%) line. Median age was 66 years, 71% were male and 83% had clear cell histology. Baseline IMDC group was favorable in 25%, intermediate in 63% and poor in 12%. Lymph-nodes, visceral and bone metastases were present in 54%, 91% and 36%. mOS and progression-free survival (PFS) were 34.8 and 7.5 months. Overall response rate (ORR) and disease control rate (DCR) were 30% and 61%. SII was available in 404 patients: SII < 1375 (82%) correlated with statistically significant improvement of PFS [10.2 vs 4.1 months, HR 2.06 (1.54-2.76), p< 0.001], OS [46.2 vs 9.5 months, HR 3.16 (2.23-4.49), p< 0.001], ORR (35% vs 21%, p= 0.035) and DCR (67% vs 40%, p< 0.001). ΔSII was available in 360 patients: ΔSII < 383 (75%) correlated with statistically significant improvement of PFS [11.3 vs 4.7 months; HR 1.64 (1.23-2.18), p= 0.001] and OS [NR vs 21.1 months; HR 1.76 (1.21-2.56), p= 0.003], ORR (37% vs 24%, p= 0.023) and DCR (68% vs 53%, p= 0.01). Multivariate analyses adjusted for IMDC group, line of therapy and metastatic sites, confirmed the statistically significant correlation of bSII and ΔSII with OS, PFS and DCR. Conclusions: Our study showed the statistically significant correlation of lower bSII and early ΔSII with longer OS, PFS and higher DCR in mRCC patients treated with Nivolumab.

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Rebuzzi, Sara Elena, Sebastiano Buti, Marco Maruzzo, Ugo De Giorgi, Andrea Sbrana, Paolo Andrea Zucali, Emanuela Fantinel та ін. "Baseline and early change of neutrophil to lymphocyte ratio (bNLR and ΔNLR) as prognostic factors in metastatic renal cell carcinoma (mRCC) treated with Nivolumab: Final results of the Meet-URO 15 (I-BIO-REC) study." Journal of Clinical Oncology 38, № 15_suppl (20 травня 2020): e17081-e17081. http://dx.doi.org/10.1200/jco.2020.38.15_suppl.e17081.

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e17081 Background: Biomarkers to select mRCC patients most likely to benefit to immunotherapy are needed. The retrospective multicentre Meet-URO-15 study evaluated the prognostic role of peripheral blood cells in mRCC patients treated with Nivolumab. Methods: Complete blood count was assessed at the first four cycles of Nivolumab. The primary endpoint was median overall survival (mOS) according to bNLR. NLR was defined as neutrophil / lymphocyte (cutoff = 3) and ΔNLR the difference between NLR at 2nd cycle and bNLR (median as cutoff = 1.1). Results: From October 2015 to October 2019, 470 patients started Nivolumab as 2nd (67%), 3rd (22%) and > 3rd (11%) line. Median age was 66 years, 71% were male and 83% had clear cell histology. Baseline IMDC group was favorable in 25%, intermediate in 63% and poor in 12%. Lymph-nodes, visceral and bone metastases were present in 54%, 91% and 36%. mOS and progression-free survival (PFS) were 34.8 and 7.5 months. Overall response rate (ORR) and disease control rate (DCR) were 30% and 61%. bNLR was available in 404 patients: bNLR < 3 (54%) correlated with statistically significant longer PFS [11.4 vs 5.4 months; HR 1.69 (1.33-2.15)] and OS [46.2 vs 17.2 months; HR 2.37 (1.72-3.26)] (both p< 0.001), with similar ORR (35% vs 30%, p= 0.28) but higher DCR (71% vs 52%, p< 0.001). ΔNLR was available in 360 patients: ΔNLR < 1.1 (73%) correlated with a statistically significant improvement of PFS [11.2 vs 4.9 months; HR 1.53 (1.16-2.03), p= 0.03], OS [Not Reached vs 19.7 months; HR 1.83 (1.28-2.61), p= 0.001], ORR (37% vs 23%, p= 0.011) and DCR (68% vs 53%, p= 0.008). Multivariate analyses adjusted for IMDC group, line of therapy and metastatic sites, confirmed the statistically significant correlation of bNLR and ΔNLR with OS, PFS and DCR. Conclusions: Our study showed the statistically significant correlation of lower bNLR and early ΔNLR with longer OS, PFS and higher DCR in mRCC patients treated with Nivolumab.

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Meng, Xiao, Shiyu Xie, Xinxin Zhou, Niccolò Calandri, Mirko Sanzaro, Alberto Tosi, Chee Hing Tan, and Jo Shien Ng. "InGaAs/InAlAs single photon avalanche diode for 1550 nm photons." Royal Society Open Science 3, no. 3 (March 2016): 150584. http://dx.doi.org/10.1098/rsos.150584.

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A single photon avalanche diode (SPAD) with an InGaAs absorption region, and an InAlAs avalanche region was designed and demonstrated to detect 1550 nm wavelength photons. The characterization included leakage current, dark count rate and single photon detection efficiency as functions of temperature from 210 to 294 K. The SPAD exhibited good temperature stability, with breakdown voltage dependence of approximately 45 mV K −1 . Operating at 210 K and in a gated mode, the SPAD achieved a photon detection probability of 26% at 1550 nm with a dark count rate of 1 × 10 8 Hz. The time response of the SPAD showed decreasing timing jitter (full width at half maximum) with increasing overbias voltage, with 70 ps being the smallest timing jitter measured.

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He, Tingting, Xiaohong Yang, Yongsheng Tang, Rui Wang, and Yijun Liu. "High photon detection efficiency InGaAs/InP single photon avalanche diode at 250 K." Journal of Semiconductors 43, no. 10 (October 1, 2022): 102301. http://dx.doi.org/10.1088/1674-4926/43/10/102301.

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Abstract Planar semiconductor InGaAs/InP single photon avalanche diodes with high responsivity and low dark count rate are preferred single photon detectors in near-infrared communication. However, even with well-designed structures and well-controlled operational conditions, the performance of InGaAs/InP SPADs is limited by the inherent characteristics of avalanche process and the growth quality of InGaAs/InP materials. It is difficult to ensure high detection efficiency while the dark count rate is controlled within a certain range at present. In this paper, we fabricated a device with a thick InGaAs absorption region and an anti-reflection layer. The quantum efficiency of this device reaches 83.2%. We characterized the single-photon performance of the device by a quenching circuit consisting of parallel-balanced InGaAs/InP single photon detectors and single-period sinusoidal pulse gating. The spike pulse caused by the capacitance effect of the device is eliminated by using the characteristics of parallel balanced common mode signal elimination, and the detection of small avalanche pulse amplitude signal is realized. The maximum detection efficiency is 55.4% with a dark count rate of 43.8 kHz and a noise equivalent power of 6.96 × 10−17 W/Hz1/2 at 247 K. Compared with other reported detectors, this SPAD exhibits higher SPDE and lower noise-equivalent power at a higher cooling temperature.

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