Дисертації з теми "CuInGaSe"

Целью данной работы является исследование наиболее эффективных фоточувствительных материалов, сравнение их характеристик; расчёт поглощательной способности и выбор оптимального материала и размеров фотопреобразователя для эффективного преобразования энергии.

Целью данной работы является исследование наиболее эффективных фоточувствительных материалов, сравнение их характеристик; расчёт поглощательной способности и выбор оптимального материала и размеров фотопреобразователя для эффективного преобразования энергии.

The aim of this work was to make low cost, high efficiency, graded bandgap, thin film CuInGaSe2 solar cells by electrodeposition, using novel device designs proposed by Dharmadasa et al. These new designs were first experimentally tested using well researched GaAs and AlxGa(1-x)As materials grown using MOCVD, these ideas were then transferred to electrodeposited CuInGaSe2.New designs of graded bandgap solar cells based on p-type window materials, using the well researched GaAs and AlxGa(1-x)As alloy system, have been experimentally tested. The size of the cell was gradually scaled up from 0.5 mm diameter (0.002 cm2) to 3x3 mm2 (0.090 cm2) and to 5x5 mm2 (0.250 cm2), these were then assessed using I-V and QE techniques. The devices showed Voc in the range of 1070-1175 mV, exceeding reported values, FF in the range 0.80-0.87, and Jsc in the range 11-12 mA cm-2. The reason for the low current density was believed to be due to the GaAs capping layer used in the device, which acted as a filter. To confirm this, a second set of devices was fabricated, replacing the GaAs cap with GaAlP, this increased the Jsc to ~14 mA cm-2, Voc and FF remained the same. New PV device structures based on CuInGaSe2 starting from the front contact, instead of the conventional Mo back contact, have been grown by electrodeposition from aqueous solutions using a single bath. In order to investigate the effect of bath concentrations on the film properties, 3 different bath concentrations were used. PEC was used to determine the electrical conduction of these layers, and it was found that it was possible to grow p+, p, i, n, n+ layers by changing the deposition voltage. XRF was used to determine the stoichiometry of the corresponding layers, and XRD to investigate the bulk structure. The morphological properties were studied using AFM and SEM. A four-layer n-n-i-p solar cell structure was initially fabricated and I-V measurements were carried out to assess the devices. The devices were PV active with parameters Voc~235 mV, Jsc~22 mA cm-2, FF~0.38 and n~2.0%.Due to problems annealing CdS at high temperature and the difficulty of incorporating gallium into the layer, CuInSe2 cells with Mo as the substrate were deposited. To understand the mechanisms of film growth, detailed cyclic voltammetry was carried out, leading to the construction of a Pourbaix diagram for the Cu-In-Se system. Depositing the films at -0.476 V for 20 minutes, followed by 50 minutes at -0,576 mV gave the best quality films, with p-type electrical conduction. XRF and XRD were used to determine stoichiometry and structural properties respectively. A method to anneal the CuInSe2 layers without the use of H2Se was devised, and a detailed study using SEM to determine the effects of annealing time and temperature was carried out. Annealing the films at 550°C for 30 minutes gave the best results. I-V measurements were carried out using an electrolyte contact, the devices were photo active, (Voc~866 mV, Jsc~0.9 mA cm-2, FF~0.40).

Dans ce travail, nous nous intéressons aux défauts qui peuvent exister dans les couches minces de CIGS préparés par pulvérisation RF à partir d’une cible quaternaire. Pour réaliser les dispositifs, nous avons mis au point un protocole de dépôt à quatre étapes qui a permis d’obtenir des films minces de façon fiable. Malgré une disproportion des atomes dans le dépôt orignal, les analyses spectroscopiques montrent que les caractéristiques correspondent aux CuInGaSe2 sous forme de chalcopyrite. Ensuite, nous avons déterminé les caractéristiques courant-tension. Nous mesurons les paramètres des pièges dans les diodes par la spectroscopie des pièges profonds par la charge. Nous mettons en évidence les deux groupes de piège dans le composé ceux peu profonds (ET<100meV) et ceux profonds (>100meV) Nous montrons également que ces pièges sont sensibles à la nature de l’interface composé/électrode et que la nature et la densité de pièges sont affectées par la nature du métal employé au contact Schottky
In this work, we have focused on defects that can be formed in the film of CIGS obtained by RF sputtering of a quaternary target. For fabrication of diodes, we have set up a four step protocol to deposit reproducible composite thin films. We found that the film composition is different from that of the best absorber layer, but the spectroscopic analyses performed on the obtained films showed that their characteristics matched those of chalcopyrite in CIGS. We have determined the electrical characteristics of Schottky diodes using CIGS as an active layer by current-voltage measurements. We determined the trap parameters of the devices making use of the charge based deep level transient spectroscopy. Two trap groups have been identified: shallow trap group with activation energy (<100meV) and deep trap group (>100meV). The trap density is sensitive to the nature of the interfacial regions between the compound and the electrode showing that the Schottky contact impacts strongly on defect formations

碩士
雲林科技大學
材料科技研究所
98
In this study, the CuInGaSe 2 is prepared by electrodeposition. First of all, Cu is electrodeposited onto stainless steel and to find out the best condition to deposit Cu by changing different parameters. Second, Indium and Gallium were electrodeposited by using Orthogonal array of L 18 . Final, that the In/Cu/S.S. and In/Ga/Cu/S.S be selenized, and the selenized condition is heated at 500℃ for 1hour in Argon atmosphere. The CIGS should be characterized by XRD, FE-SEM and EDS. The results show the best parameters for the electrodeposition of Cu/In layer by Taguchi method (current : 25mA, pH : 11, InCl 3 solution: 150mM and KNaC 4 H 4 O 6．4H 2 O solution: 1M and the deposition time is 30 minutes.) The results show the best parameters for the electrodeposition of Cu/Ga layer by Taguchi method (current : 60mA, pH : 11.5, GaCl 3 solution : 75mM and C 6 H 5 Na 3 O 7 solution : 1M and the deposition time is 40 minutes.) After selenided, by using XRD, CIS phase has be found in In/Cu/S.S. and CGS phase has be found in In/Ga/Cu/S.S.. After EDS analysis, the content of In in In/Ga/Cu/S.S. is too low to make it to be CIGS.

碩士
國立高雄大學
電機工程學系碩士班
97
In this dissertation, we study the deposition of Copper Indium Gallium Selenium ( CIGS ) thin-film on glass substrate by sputtering with followed selenium heat treatment. Deposition parameters such as power, temperature and gas flow were studied. Following heat treatment parameters such as temperature and gases were studied also. Film morphology, concentration and mobility for these films were analyzed. With controlled parameters, p-type CIGS thin-films can be achieved and p-n diode were fabricated by deposition the CIGS film on n-type Si substrate. The current-voltage behavior and spectral responsivity were characterized for this diode.

碩士
國立臺南大學
電機工程學系碩士班
100
CIGS thin film solar cells, has been recognized as one of the most promising absorber materials. For improving the absorber layer characteristics of solar cells, it is essential to followed selenization heat treatment process. The dissertation mainly uses Copper Indium Gallium Selenium (CIGS) single quaternary alloy target, which can simplify the process control. The power was kept at 100w and substrate temperature was 400 ℃ to deposit on the substrate, absorption precursor layer CIGS by RF-sputtering was obtained. By controlling different selenization heat treatment parameters, p-type and low resistivity CIGS thin film absorption layer can be fabricated. Furthermore, it was observe that the thin film with larger grain size as selenization temperature was 550℃, and the selenization holding temperature time was 30 minutes, crystal structure with better quality. From the Raman spectra signal peak gave an evidence of the formation of the CIGS quaternary compounds, and the energy band gap can be easily reached the above of 1eV. Therefore, this studies investigated for the enhanced reasons of CIGS thin film absorber layer, and it was expect to provide a better heat selenization method for effective enhancement.

碩士
國立中正大學
光機電整合工程研究所
99
In this study, we carriered out the ink by solvothermal method. The selenide compounds and the nitrate compound of copper, indium, and gallium were dissolved in alcohol then mix them well as a precursor. Then add the appropriate bonding agent and dispersing agent for viscosity adjustment, so that it can be uniform and completely coating on the glass substrate. By using this method, we have fabricated thin film of copper indium gallium selenide successfully. And we found that as annealing temperature increases, the intensity of X-ray diffraction peak increases and the location will be slightly shift; the lattice constant will result in be different. Experimental results show that after adding the dispersant agent in the precursor, heat stirring under atmospheric environment, and annealing in the the right amount of hydrogen gas will be available to increasing the intensity of X-ray diffraction peak and obtain larger grain size. After the measurement of sheet resistence by four-point probe, we had calculated the resistivity of our sample and obtain the best valude is 0.406 Ω-cm. Comparing with other research, our sample has higher conductivity.

博士
國立清華大學
光電工程研究所
100
Chalcopyrite compounds of Cu(In,Ga)Se2 and related alloys are among the most promising materials for photovoltaic applications. Sputtering of Cu-In-Ga precursors followed by selenization has been a preferred industrial process for Cu(In,Ga)Se2 solar cell manufacturing. In a sputtering process, many studies using co-sputtering or sequential sputtering from CuGa and In magnetron targets for preparation of the metallic precursors. In this study, the metallic precursors were deposited by sputtering a single Cu-In-Ga ternary target and compared with the In/CuGa stocked precursors and these samples were selenized using the Se vapor. It was observed that Ga tends to segregate near the Mo electrode after selenization thus reducing the band gap of the Cu(In,Ga)Se2 absorber near the surface. Since the open circuit voltage (Voc) depends on the band gap in the space charge region (SCR) near the surface of absorber. The device fabricated using this process, however, tends to have a relatively low Voc value due to the Ga element migration to near the Mo electrode. 一、Proposed and demonstrated a novel sandwiched precursor structure we demonstrated a novel sandwiched structure to improve the Ga distribution and grain growth in the absorption layer and thus increase the open circuit voltage Voc and Jsc. We discuss the employment of a novel precursor structure using a single CuInGa layer sandwiched between thin CuGa and In layers. This precursor structure was constructed by having a thin CuGa film on top of the CuInGa ternary layer and a thin In layer to the bottom of the CuGa/CuInGa stacked layer. It is observed that when a thin CuGa film was sputtered on top of the surface of CuInGa ternary precursor, it enhanced the grain growth of Cu(In,Ga)Se2 absorber and increased the Ga concentration in the space charge region, therefore improved the open circuit voltage (Voc). In addition, we observed when a thin In layer was added to the bottom of CuGa/CuInGa stacked layer, it reduced the minimum band gap of devices, and therefore increased the absorption of solar spectrum. By employing this novel structure, the open circuit voltage for the solar cell devices in our studies increased by 18.2% (from 390 mV to 460 mV), the short current density by 13.8% (from 29 mA/cm2 to 33 mA/cm2), and the conversion efficiency by 50 % (from 6.26 % to 9.52 %). 二、Investigation of selenization and sulferization process we discuss three kinds of selenization methods including (a) the RTP process, (b) H2Se selenization process and (c) sulferization after selenization process which were used in studying the Ga distribution and grain growth of Cu(In,Ga)Se2 absorbers under these three selenization processes. In an experiment study of selenization using RTP, our result shows by shortening the annealing time, CuGaSe2 and CuInSe2 would produce almost within the same time and therefore could reduce the segregation of Ga into the bottom of Cu(In,Ga)Se2 absorber. These experiments directly confirmed that the segregation of Ga element due to a difference in the formation temperature of the CuGaSe2 phase higher than that of the CuInSe2 phase. From the results of our study of the H2Se selenization process using XPS and SEM analyses, it further suggests a higher selenization temperature did not affect the Ga distribution in the absorber, however, it could enhance the grain growth near the bottom of Cu(In,Ga)Se2 absorber. As a result, it lead to an increase of the conversion efficiency of the solar cell devices from 9.5% to 12.8%; an enhancement of about 34%. From the experiment results of sulferization after the selenization process, the sulfur element incorporate into the Cu(In,Ga)Se2 absorber would form smaller grains. By comparing the results of GIXRD and SEM, it suggests that a lower selenization temperature would increases the S content in the surface area of Cu(In,Ga)(Se,S)2 film and form smaller grains of absorber and the energy band gap of the absorber. As a result, by using sulferization after the selenization process, the open circuit voltage (Voc ) of the device was further improved by 10%, and the overall conversion efficiency of the solar cell devices increased by about 10% from 12.8% to 14%. 三、Near infrared enhancement in Cu(In,Ga)Se2-based solar Near infrared enhancement in Cu(In,Ga)Se2-based solar cells utilizing a ZnO:H window layer were also investigated in this study. The hydrogen atoms incorporated into a ZnO film as a shallow donor could decrease the resistivity of ZnO film. The ZnO:H film has sa imilar resistivity to that of the ZnO:Al film of about 1.29×10-3 Ω-cm. The advantage of ZnO:H film is higher Hall mobility than ZnO:Al film and thus the carrier concentration of ZnO:H film is lower than that of ZnO:Al film which can decrease free carrier absorption in the NIR. It is found that the cell efficiency is enhanced by 4.8% for the ZnO:H device. This is attributed to the fact that the ZnO:H film has higher transmittance than the ZnO:Al film in the NIR which results in the improvement of short-circuit current (Jsc) from 34.5 to 35.6 mA/cm2.

碩士
中華技術學院
電子工程研究所碩士班
96
With global energy crisis, the rising of environmental awareness, surging of oil prices, and the signing of Kyoto Protocol, as well as the subsidized use of solar energy in the U.S. and EU, the adoption and the research of solar cells have become increasingly important. Experiment One – The objective of this thesis is to use DC Sputter to deposite copper indium gallium diselenide (also known as CIGS) thin film on plastics, P-SI and glass substrates. As a I-III-VI2 quaternary compound, CIGS possesses the advantages of high absorbance, low cost and easy processing. The lattice direction of an excellent CIGS thin film should contain 112 facets. In this experiment we use X-ray diffraction (XRD) to analyze, and then choose substrate with 112 facets for further experimental analysis. Furthermore, We use DC Sputter to deposit copper indium gallium diselenide thin film onto plastic substrate, then conduct Hall Measurement with parameters of difference processes to analyze whether the CIGS thin film possesses good majority carrier content, low resistance, P/N type and majority carrier mobility. Next, we measure the thickness of the thin film with the Spectra Thick Series, analyze the thin film with spectroscope, convert and calculate the energy gap and then observe the crystalline facet structure with XRD. Combining results from all the analysis and measurements described above, we can then analyze and study the deposition time, thin film thickness, and the electrical property to determine whether the deposited CIGS thin film can act as an excellent main absorbing layer of the solar cells

碩士
國立成功大學
微電子工程研究所碩博士班
101
In this study , using the CuInGaSe2 nano powder , KD1 dispersant and ethyl cellulose formulated into uniform slurry. Using the slurry fabricated CuInGaSe2 thin films by screen priting and Two-stage heat treatment completed p-CuInGaSe2.Advantages of screen printing are low equipment cost , easy fabrication , negligible waste of chemicals and possibility to deposit over large area. The disadvantages of the film are difficult to control the thickness and easy have carbon residue.The CdS thin film is fabricated by CBD method and use different sources of cadmium. The thin films of p-CIGS and n-CdS analysis by SEM, EDS, Raman spectroscopy, XRD, Hall electrical measurements, UV-VIS transmittance measurement and energy gap conversion. Finally, the optimal CIGS film was applied as the absorber layer for device configuration: SLG/Mo/CIGS/CdS/ZnO/AZO/ Al.Measuring the CIGS device with area of 0.25cm2, CdS fabricated by cadmium sulfate has conversion efficiency of 1.39% and CdS fabricated by cadmium chloride has conversion efficiency of 0.99%.

碩士
國防大學理工學院
光電工程碩士班
102
The Characterization of copper-indium-gallium selenide absorbers is studied by two step preparation method. To uniformly control the metal composition, the precursor of copper-indium-gallium metal are stacked in sequence of Cu(300nm)/In(700nm)/Ga (300nm) by a thermal evaporator. The precursor was selenized by a furnace and Se powder in a closed tube. From EDS analysis, it is found that no gallium exists in the formation film. A thicker Ga metal is used to increase the Ga content. However, it is still no Ga content in the formation films. The reason may be attributed to uneffective selenization processes. Therefore, multistep selenizations are used to effectively control the metal composition. The Ga content of the formation film is about 6~8%. However, the thicker the In layer, the larger the surface roughness. Too large surface roughness will result in the coverage problem of CdS buffer layer deposition. Uncover region of CdS thin film may cause a leakage current path. It will seriously degrade the solar efficiency. It is found that a low surface roughness and good metal composition of Cu(24.93%)/Ga(6.11%)/In(20.03%) are obtained when the thickness of In layer decreases from 350nm to 110nm.

碩士
國立成功大學
電機工程學系碩士在職專班
102
In this dissertation, I sputtered Copper-Indium-Gallium metallic precursors on Mo-coated soda-lime glass substrates followed by high temperature selenization process to form the CuInGaSe2 (CIGS) absorber films. I used a novel chemical mechanical polishing process to improve the roughness or flatness of the CIGS absorber layer. Improved CIGS film roughness could benefit for better ZnS coverage and therefore better effective junction formation, which in term can improve the conversion efficiency of the CIGS solar cells. In this study, I found that Br2 concentration in slurry, revolution speed of the slurry solution, and down force of polishing can significantly influence on CIGS film’s roughness or flatness. I used scanning electron microscope (SEM), X-ray diffraction (XRD), and Zygo white light interferometer to analyze film’s morphology, film composition, crystalline phase/orientation, and topography of the film. The best condition in my study is 1 Kg down force, 6x revolution speed, 120 sec polish time with Br2 concentration of 0.050% and using 70 nm abrasive.

碩士
明新科技大學
電子工程研究所
99
The device structure of Cu(In,Ga)Se2 thin-film solar cells includes substrate, back contact, absorber layer, buffer layer, transparent conductive oxide (TCO) film, antireflection coating and front contact. The content of this research focuses on the preparation of absorber and TCO films and the investigation physical properties of the resultant films. The content of this research has two part, the first part studies the preparation of Cu(In,Ga)Se2 thin films, which was carried out by the pulsed laser deposition techniques. CuInGaSe2 films were deposited on various substrates of glass, soda lime glass(SLG), Mo-coated glass and Mo-coated soda lime glass. The physical properties of the prepared films, which were treated at different substrate temperatures of 450°C, 500°C, 550°C and 600°C, have been measured and demonstrated. Cu(In,Ga)Se2 compound films deposited on Mo-coated soda lime glass at substrate temperature of 550°C exhibit the single-phase chalcopyrite structure and better crystallinity. The resultant film reveals the resistivity of 1.93x10-3 Ohm-cm and the optical energy bandgap of 1.2-1.34eV. The second part investigated the preparation and properties of boron-doped zinc oxide (B-doped ZnO) targets with various weight ratio of 0.25%, 0.5%, 0.75% and 1.5%, the results show the optimal doing amount of boron to be 0.75wt%. The resultant films have been deposited on glass substrate by using a B-doped target (with 0.75wt%) and the pulsed laser deposition technique. The boron-doped ZnO films were deposited at substrate temperatures of 150 ℃, 200 ℃, 250 ℃ and 300 ℃, respectively. The resistivity, transmittance and optical bandgap of the best boron-doped ZnO films deposited at substrate temperature of 250℃ show 1.5x10-3 Ohm-cm, > 80% and 3.55eV, respectively.

碩士
國立虎尾科技大學
材料科學與綠色能源工程研究所在職專班
100
Cu (In, Ga) Se2 (CIGS) plays a very important role in the development of thin film solar cells. In this thesis, According to different proportions, we present a study on copper, indium, gallium, selenium to smelting Cu-rich ,Stoichiometric and Cu-poor of two alloying elements of CuInGaSe2 by non-vacuum process. The CuInGaSe2 slurry was prepared using ball milling. And the CuInGaSe2 slurry was printed onto a silicon substrate and glass substrate to form a precursor layer by spin coating, then rapid thermal annealing process within the RTA furnace. The purpose is to be able to obtain CuInGaSe2 precursor layer liquid phase sintering without toxic Se or H2Se atmosphere. Then observation elemental composition was characterized by using EDS, surface morphology and cross-section determined by SEM, and observation composition of the changes by X-ray diffraction (XRD). The results of this experiment indicated that the precursor layer was been quaternary alloying elements after smelting to form the different structure and complete coating specimens after rapid thermal annealing cause grain structure has a greater a significantly change.

碩士
國立臺灣科技大學
材料科學與工程系
100
The non-vacuum processes for Cu(In,Ga)Se2(CIGSe) solar cells have gradually attracted the researches’ attentions. However, the major problem of the non-vacuum processes is the densification, grain size and the purity of the p-type absorption layer. In the study, CIGSe thin film solar cells were prepared by using ink-printing on alumina substrates. The p-type absorption layers were prepared with different precursor (CIGSe, CIGSe + 10 mol% Te, CIGSe + 5 mol% Sb2S3, and CIG and CIGZT cermets), followed by selenization with different Se sources and annealing temperatures. The CIGSe solar cell was constituted with the stacking form of Ag/ITO/ZnO/CdS/ ink-printing CIGSe/Mo/Al2O3. The quality of the absorption layer was analyzed by X-ray diffractometer, field-emission scanning electron microscope equipped with energy dispersive X-ray spectrometer and Hall measurement. The performance of the solar cells was evaluated under the standard AM1.5 illumination. The experimental results showed that the ink-printing CIGSe thin film of a thickness of 2-5 μm with the CIGSe + 5 mol% Sb2S3 ceramic precursor after selenization at 650 oC had shown the best performance with dense microstructure, desired composition, and the grain size of 500 nm. On the other hand, the CIGSe films obtained from CIG and CIGZT cermet precursors after selenization at 650 oC had good crystillinity and large grain size of 1-2μm. The stacked solar cells displayed the power conversion efficiencies of 0.268% (CIGSe + 5mol % Sb2S3), 0.96% (CIG) and 0.861% (CIGZT).

碩士
明新科技大學
化學工程與材料科技研究所
100
Zinc oxide with low cost and high stability, but the carrier concentration in the film is not enough.. Hence, ZnO with different impurity dopants can be used to increase carrier concentration and conductivity. In this study, the electrical characteristics, crystallinity, and the position correlation between substrate and target position for the aluminum-doped zinc oxide (AZO) layer by sputtering with the different sputtering conditions (RF power, distance of target and substrate, process pressure, substrate temperature) were studied. The results indicate that the uniformity of the conductivity in the film was determined by the plasma ion bombardment. The AZO specimen, which were located at the 6 cm away from the center position ,with the RF power of 100 W, the distance between target and substrate distance of 5 cm, the process pressure of 1.6 mtorr, substrate temperature of 200 C, exhibits better electrical conductivity (4.8 ×10-4 ohm-cm). The optical and electrical properties of AZO thin films deposited on glass under the rapid thermal annealing treatment with different temperature and process duration time were also studied. As the AZO sample were annealed by rapid thermal annealing treatment at the temperature of 300 ℃, process time of 30 min, show the sheet resistance of 1.17 ohm/□, the highest average visible transmittance of 92.47% in the wavelength range from 400 ~ 800 nm. Finally, the AZO films with different substrate temperatures on the CuInGaSe2 thin film solar cells located at the position of 6 and 8 cm from the center were used as the top electrode.. By using AZO deposited at the substrate temperature of 200 ° C, the CIGS cell exhibits the highest Voc is 0.5968 V, Jsc of 28.46 mA/cm2 and the photoelectric conversion efficiency of 11%, the contact resistance of 7.16 ohm-cm2, Rsh of approximately 2267.2 ohm. An enough substrate temperature can increase the photoelectric conversion efficiency of CIGS solar cell.

碩士
國立成功大學
微電子工程研究所碩博士班
101
In this thesis, we investigated the strain-induced reliability of back-contact for electrode deposited on polyimide (PI) substrate for flexible CIGS solar cells applications, and we integrated the electrode with silver nanowires (NWs) to enhance the flexibility of the back-contact electrode. The thesis content can be divided into three subjects. The first one is the investigation of cracks induced by the internal strain resulting from the fabrication process and the method we used to fix cracks of the conventional Mo back-contact electrode. For the second subject, the reliability of pure Mo and Al- or Ag-added Mo structures were evaluated by a home-made bending tester. For the last subject, silver NWs-embedded contacting layers as an electrode were evaluated. It demonstrated superior performance with minimal resistivity evolution before and after the bending tests and more flexibility than the conventional Mo electrodes. First, various efforts to reduce process-induced strain, such as lowering the annealing ramping rate, depositing an additional back-side Mo film, and adding an Mo annealing pretreatment, were investigated. The annealing ramping rate was adjusted from 25 to 5⁰C/min to minimize the thermal stress of Mo film but had no success in fixing the cracks. Neither could the additional back-side Mo film fix the cracks, but only served to reduce the sample curving after the selenization process. In one instance, crack of Mo electrode was fixed by a one hour 390⁰C annealing pretreatment, but the reproducibility was very low. The annealing pretreatment could improve the Mo film quality and partially alleviate the process-induced strain. For the second subject, we fabricated Al- and Ag-added Mo structures, including MoAl, MoAg alloys and Al/Mo, Ag/Mo bi-layer structures, as alternative contacting layers. The annealing pretreatment was applied to these structures for further improvement. A bending test was designed to study the flexibility of these various structures. For the as-deposited films, none of the Al- and Ag-added Mo structures exhibited a better performance in the bending test than that of the conventional Mo, which could sustain 0.16% tensile strain and 0.28% compressive strain without obvious resistance increment. The annealing pretreatment did boost the sustainability of tensile strain up to 0.42% for Mo, MoAl and MoAg structures, but the pretreatment on pure Mo is more effective than those impurity-added Mo structures. In the final subject, the silver NWs-embedded Mo layers, Mo/Ag NWs/Mo (MAM) and Ag NWs/Mo (AM) structures, with or without annealing were studied. CIGS film was formed on these structures for further investigation. For the as-deposited structures, macroscopic cracks occurred on the CIGS films and the electrode layers after the selenization process. Their resistances were increased to 100 ohm from tens ohm under 1.68% highly tensile or compressive strain. For the annealed structures, crack-free electrodes with low resistance (3.12 Ω, 1.04 Ω/□) were observed. They demonstrated more flexible (resistance kept below 5.6Ω and 3.2 Ω after 5-cycle 0.84% tensile and compressive bending respectively) and the superior performance of the MAM electrode is reproducible.

碩士
崑山科技大學
機械工程研究所
99
CIGS solar cells show a considerable number of advantages among a number of thin-film photovoltaic materials. For example: the high absorption coefficient, high conversion efficiency, can absorb most wavelength sunlight. The fabrication process of CIGS is mostly done in a vacuum environment. The alloy thin-film of copper, indium and gallium is made by co-evaporating or sputtering, then this alloy thin film is annealed in sulfur vapor pressure to complete CIGS2 structure. Using 350W power can obtain the best uniformity for the copper gallium target, thus the experiments use the 350W as the power parameter. The thin film surface homogeneity and roughness are within an acceptable range by using 400W power for indium target, and it can be grown in a relatively short period of time to the desired thickness. But it is rougher comparing with the 250W power, thus the 250W power is applied as the most appropriate parameter for indium target. Analysis results indicated that better composition ratio of the bilayer and multilayer coated metal precursor layer of copper gallium and indium is 1:2, and EDS analysis results indicated that the ratio of Cu/Ga:In of 1:2 deposited by the experiments is the better CIGS thin film composition ratio, the composition ratio of Cu:Ga:In close to 1:1:2 (ideal composition ratio). The XRD diffraction analysis of the available CIGS preferred crystallographic orientation (112) peak, and multilayer laminated can get larger and dense crystalline layer of the metal precursor layer.

碩士
國立臺北科技大學
化學工程研究所
97
The CuInGaS2, and CdS semi conduction thin films were grown on indium-tin-oxide coated glass substrates by using chemical bath deposition. The influences of various deposition parameters on structural, optical, electrical performances of films have been investigated. The thickness, band gaps and carrier densities of CuInGaS2 determined from transmittance spectra and electrochemical analysis are in the range of 200~700nm, 1.5eV, and 2.14×1015~4.5×1015 cm-3, respectively. The band gaps of CdS were 2.25eV .The flat band potentials of n-type CIS2,p-type CIGS2,and CdS are located between -0.55~ -0.1 V,0.3~0.53V,and -1.35~ -1.1 V(v.s Ag/AgCl) versus normal hydrogen electrode with the Mott-Schottky measurements, respectively. The maximum photocurrent density of CuInGaS2 was found to be -1.28mA/cm2 by the illumination of a 300W of Xe lamp system.

碩士
國立交通大學
照明與能源光電研究所
102
The Copper Indium Gallium Diselenide (CIGS) is the most promising material for solar cell application. Until now, the best conversion efficiency reaches 20.4% by EMPA, Swiss. However, the traditional buffer material is cadmium sulfide (CdS), the cadmium is toxic for environment. Thus the zinc sulfide (ZnS) was adopted for the alternative material for buffer layer in this thesis. On the other hand, the direct manner improved the conversion efficiency is application of anti-reflection layer. However, the traditional anti-reflection layer unable to reach broad-band anti-reflection due to the limitation of design. Thus, zinc oxide nanorod (ZnO NR) with graded refraction index was adopted for the anti-refleciton layer, and further improve the conversion efficiency of solar cell. For the ZnS buffer layer, we improved the deposition conditions consisted of initial point of deposition and mixed order of reactant and according to the growth mechanism in the chemical bath deposition, enhance the heterogeneous and suppress the homogeneous nucleation as possible to acquire the ZnS thin film with 100-nm-thick and 1.44-Zn/S ratio. For ZnO NR antireflection layer, we study the relationship between the height of ZnO NR and optical properties. We found the surface reflectance was reduced via the increase of height of ZnO NR but the transmittance was decreased accordingly. The absorption effect was proposed. After analyzing, the most promising period of ZnO NR growth for improvement of efficiency was between 8 and 14 minutes. Finally, we used ZnS as buffer layer and ZnO NR as anti-reflection layer for fabrication of CIGS solar cells. After analyzing the current-voltage characteristics, the CIGS solar cell with NR deposited for 11 minutes acquired the relative gains of conversion efficiency and short-circuit are 8.3% and 7.56%, respectively.

碩士
國立臺北科技大學
製造科技研究所
99
In this study, CIGS films were fabricated by selenization of single-sputtered CuInGa precursors using a CuInGa ternary alloy target. The effects of 2-stage and 4-stage selenization process on the CIGS thin films were investigated. SEM, XRD, EPMA and Hall meansurement were used to indentify the morphologies, micro-structures, compositions and electrical properties of the CIGS thin films. It was found that CuInGa precursors show Cu11(In,Ga)9 single phase with Cu/(In+Ga) ratio between 0.80-0.85, corresponding to the stoichiometric proportion of CuInGa target. As the sputtering power is maintained at 0.2 W/cm2, the CuInGa precursor shows flat topography with small grain size of 80–100 nm. All selenized CIGS films exhibited chalcopyrite structure with preferred orientation along (112) plane and In-rich componet with Cu/(In+Ga) between 0.85-1.01. Material loss in 2-stage selenization process was reduced by inducing 4-stage selenization procedure. The surface roughness of CIGS films depended on the topography of the precursors which could be improved by reducing the sputtering power density. Hall measurement on CIGS films yielded carrier concentration of -1.566×1019-1.66×1020 cm-3. In conclusion, utilizing CuInGa ternary target on precursor deposition is a possible way for CIGS thin film preparation which beneficially simplifies the manufacturing procedures and precisely controls the composition.

碩士
國立中興大學
物理學系所
99
CuInxGa1-xSe2 (CIGS) films were prepared on soda-lime glass (SLG) by a selenization process under atmospheric pressure using a new Se-containing precursor, ditert-butylselenide (DTBSe). Purified N2 was utilized to serve as carrier gas. The physical properties and surface morphologies of CIGS films were investigated by photoluminescence spectroscopy (PL), x-ray diffractometry (XRD), scanning electron microscopy (SEM), energy dispersive spectroscopy (EDS), x-ray photoelectron spectroscopy (XPS) and Hall measurement. It was found that the multi-stage selenization process led to the formation of p-type CIGS films with uniform thickness, good stoichiometry and high crystalline quality.

碩士
國立中央大學
光電科學研究所
98
CIGS is the material that has the best potential for the development of thin film solar cells. The 20.1% efficiency for CIGS is the new world record. However, the high vacuum processes needed for production are too expensive and thus not suitable for large scale production. The development of a non-vacuum process is necessary. In this work, we fabricate Cu(In,Ga)(S,Se)2 absorbers layers by a non-vacuum spray process without external selenization, and it took only 3 minutes to reach the chalcopyrite structure in the Rapid Thermal Annealing (RTA). Besides, we strive to replace CdS with ZnS. The Stainless / CIGS/ ZnS/ ZnO/ITO solar cells with efficiency of 3.926 %.