Дисертації з теми "CuGaS2"
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Branch, Matthew Stewart. "Epitaxial growth and characterisation of CuGaS2." Thesis, Nelson Mandela Metropolitan University, 2006. http://hdl.handle.net/10948/438.
Повний текст джерелаMovaghgharnezhad, Shirin. "Electrodeposition of CuGaS2 from Aqueous and Non-aqueous Electrolyte Mixtures." OpenSIUC, 2017. https://opensiuc.lib.siu.edu/theses/2251.
Повний текст джерелаCapet, Frédéric. "Évolution sous pression hydrostatique des propriétés structurales, optiques et électroniques du semi-conducteur ternaire : cugas2." Lille 1, 1995. http://www.theses.fr/1995LIL10148.
Повний текст джерелаMeeder, Alexander. "Defektspektroskopie an CuGaSe2 aus der halogenunterstützten Gasphasenabscheidung." [S.l.] : [s.n.], 2004. http://www.diss.fu-berlin.de/2004/15/index.html.
Повний текст джерелаGerhard, Andreas. "Elektrische Defektspektroskopie an CuGaSe2 und verwandten Halbleiterdünnschichten." [S.l. : s.n.], 2000. http://www.diss.fu-berlin.de/2000/142/index.html.
Повний текст джерелаFischer, Daniel. "Eigenschaften von CuGaSe2-Dünnschichten hergestellt mit chemischer Gasphasenabscheidung." [S.l. : s.n.], 2000. http://www.diss.fu-berlin.de/2001/27/index.html.
Повний текст джерелаKlenk, Markus. "CuGaSe2-Absorberschichten aus mehrstufigen Prozessen : Materialcharakterisierung und Solarzellenherstellung /." [S.l. : s.n.], 2001. http://www.bsz-bw.de/cgi-bin/xvms.cgi?SWB9673658.
Повний текст джерелаSchuler, Steffen. "Transporteigenschaften und Defekte in polykristallinen CuGaSe2-Schichten und Heterostrukturen." [S.l. : s.n.], 2002. http://www.diss.fu-berlin.de/2002/294/index.html.
Повний текст джерелаSchmid, Martina [Verfasser]. "Optik der CuGaSe2-Solarzelle für hocheffiziente Tandemkonzepte / Martina Schmid." Berlin : Freie Universität Berlin, 2010. http://d-nb.info/1024006301/34.
Повний текст джерелаRomain, Nahel. "Caractérisations de couches minces de CuGaSe2 obtenues par MOVCD." Montpellier 2, 1999. http://www.theses.fr/1999MON20203.
Повний текст джерелаLuckert, Franziska. "Optical properties of the chalcopyrite semiconductors CuInSe₂, CuInS₂ and CuGaSe₂." Thesis, University of Strathclyde, 2012. http://oleg.lib.strath.ac.uk:80/R/?func=dbin-jump-full&object_id=25805.
Повний текст джерелаBauknecht, Andreas. "CuGaSe2 für die Anwendung in der Photovoltaik metallorganische Gasphasenepitaxie und optische Charakterisierung /." [S.l. : s.n.], 1999. http://www.diss.fu-berlin.de/2000/19/index.html.
Повний текст джерелаFiedeler, Ulrich. "Rekombination und Diffusion in CuGaSe2-Solarzellen Photolumineszenz- und Quanteneffizienzuntersuchungen an MOCVD gewachsenen Absorbern /." [S.l.] : [s.n.], 2001. http://www.diss.fu-berlin.de/2002/26/index.html.
Повний текст джерелаMeyer, Nikolaus. "Phasenbildung im Raum Cu-Ga-Se und halogenunterstützte Gasphasenabscheidung von CuGaSe2-Absorberschichten für Solarzellen." [S.l. : s.n.], 2000. http://www.diss.fu-berlin.de/2000/74/index.html.
Повний текст джерелаFuertes, Marrón David. "Structural and electronic characterisation of thin film solar cells based on CVD grown CuGaSe2." [S.l. : s.n.], 2003. http://www.diss.fu-berlin.de/2003/228/index.html.
Повний текст джерелаRivalland, Adrien. "Elaboration et caractérisation de cellules solaires photovoltaïques tandem CuGaSe₂ / silicium cristallin : vers une approche monolithique à deux terminaux." Thesis, Nantes, 2020. http://www.theses.fr/2020NANT4065.
Повний текст джерелаTo overcome 30% conversion efficiency, tandem solar cells based on crystalline silicon (c-Si) sub-cells are one of the most promising architecture regarding the theoretical predictions. Furthermore, a monolithic two-terminal approach using wide bandgap thin films as top cell does not require significant modification of the existing solar modules. Cu(In,Ga)(S,Se)₂ absorber layer is a promising candidate thanks to its high efficiency (the module record efficiency is around 19%) and to its tunable bandgap energy. In addition, industrial solar cells are currently produced from this material. In-free CuGaSe₂ (CGSe) can also be used as top cell absorber in a multi-junction device thanks to its optimal bandgap value (1.68eV). Nevertheless, the actual conversion efficiency of CGSe based solar cells is still low (11.9%). The objective of this thesis is to optimize the development of a single-junction solar cell based on CGSe, to develop top cell deposition process without degradation nor contamination of the c-Si bottom cell and finally to elaborate functional CGSe / c-Si tandem solar cells
ZOUAD, SARDI MAMA. "Analyses et proprietes electrochimiques des composes de structure chalcopyrite : cuinse#2, cugase#2 et cu (in, ga) se#2." Paris 6, 1989. http://www.theses.fr/1989PA066532.
Повний текст джерелаФедорова, Е. А. "Гидрохимический синтез пленок со структурой халькопирита CuGaSe2 и кестерита Cu2ZnSnSe4 : диссертация на соискание ученой степени кандидата химических наук : 02.00.04". Thesis, б. и, 2016. http://hdl.handle.net/10995/41621.
Повний текст джерелаФедорова, Е. А. "Гидрохимический синтез пленок со структурой халькопирита CuGaSe2 и кестерита Cu2ZnSnSe4 : автореферат диссертации на соискание ученой степени кандидата химических наук : 02.00.04". Thesis, б. и, 2016. http://hdl.handle.net/10995/41612.
Повний текст джерелаRenaud, Adèle. "Semi-conducteurs de type p pour une application en cellules solaires à colorant." Nantes, 2013. https://archive.bu.univ-nantes.fr/pollux/show/show?id=bc5d055e-878e-4b2d-af7c-44949293c4df.
Повний текст джерелаThese thesis works focused on the realization of p-type dye sensitized solar cells (DSSCp) with a photocathode using an alternative to NiO. The objective was to replace the p-type semiconductor by more transparent and conductive materials and displaying a lower valence band energy to enable the generation of higher open circuit voltages (Voc). In this context, CuGaO2, LaOCuS and ZnO:N compounds were synthesized in nanoparticles form, characterized by X-ray diffraction and their flat band potentials (Vfb) were determined by complex impedance spectroscopy. As a result CuGaO2, LaOCuS and ZnO:N have Vfb significantly higher (0. 49 V/SCE), similar (0. 36 V/SCE) and lower (0. 20 V/SCE) than that of NiO (0. 33 V/SCE). Thus, dye sensitized solar cells based on the delafossite material were made and tested with the PMI-NDI dyad as dye and a cobalt complex as redox mediator. A greater VOC than that observed for NiO under the same conditions is highlighted. This result is unfortunately altered by a lower short circuit current (Jsc). To try to overcome this drawback, CuGaO2:Mg materials with a higher specific surface area than that of CuGaO2 have been prepared and tested. Simultaneously, we have focused on the achievement of cells based on LaOCuS, more conductive material than NiO. In addition, the p-type conductivity of ZnO:N was further characterized
Kessler, John. "Etude photoelectrochimique des alliages cuin::(1-x)ga::(x)se::(2) : relation entre les proprietesphotovoltaiques des couches minces de cugase::(2) et leur composition." Paris 7, 1988. http://www.theses.fr/1988PA077189.
Повний текст джерелаImanieh, Mohsen. "Growth and characterisation of CuInSeâ†2 and CuGAâ†XInâ†1-â†XSeâ†2 single crystals." Thesis, University of Salford, 1989. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.253047.
Повний текст джерелаKessler, John. "Etude photoélectrochimique des alliages Culn-x GaxSe relation entre les propriétés photovoltaïques des couches minces de CuGaSex et leur composition /." Grenoble 2 : ANRT, 1988. http://catalogue.bnf.fr/ark:/12148/cb37614733f.
Повний текст джерелаGoudreault, Roger D. "Some properties of the semimagnetic semiconductor alloy system Cd2x(CuGa)yMn2zTe2." Thesis, University of Ottawa (Canada), 1988. http://hdl.handle.net/10393/5499.
Повний текст джерелаYarhzou, Lahsen. "Elaboration et caractérisation des matériaux photovoltai͏̈ques CuGa(Se,Te)2 massifs et en couches minces." Perpignan, 1993. http://www.theses.fr/1993PERP0158.
Повний текст джерелаChebabi, Abramides Gisela. "Effectiveness of an Integrated Vector Management control strategy for the tiger mosquito (Aedes albopictus): a case study in Sant Cugat del Vallès (Barcelona)." Doctoral thesis, Universitat Autònoma de Barcelona, 2012. http://hdl.handle.net/10803/117521.
Повний текст джерелаThe Asian tiger mosquito, Aedes albopictus (Skuse, 1894), is an invasive species that is currently found in the five continents, spreading from its native area in Southeast Asia through the international trade of used tires and lucky bamboo. In Catalonia it was first reported in 2004 in the municipality of Sant Cugat del Vallès, and has quickly expanded over the last five years to more than 200 municipalities in Catalonia and Alicante. This species is a vector of several arboviruses, and it has been associated with the transmission of dengue and chikungunya virus in several areas of the world causing serious concerns to people and public health authorities. In Europe, the outbreak of chikungunya fever in Italy during 2007, and subsequent autochthonous cases of dengue fever in France and Croatia in 2010, raised the urgency of establishing effective surveillance and control programs for the vector. The objectives of this study were: (1) To evaluate the effectiveness of an Integrated Vector Management (IVM) control strategy of the Aedes albopictus population in Sant Cugat del Vallès; (2) to determine the several key factors affecting mosquito populations in the premises inspected during the “door-to-door” campaigns; (3) to describe the larval containers preferred by the species; (4) to explore the perception and the involvement of the population of Sant Cugat in the control of this invasive species and (5) to propose a standard protocol towards an IVM control strategy at local level. During 2008-2010 an IVM campaign was performed in six neighbourhoods of Sant Cugat del Vallès. The IVM strategy included source reduction campaign (with door-to-door visits), larvicide treatments (Bacillus thuringiensis israelensis and diflubenzuron), adulticide treatments (alpha-cipermetrin) and cleaning up uncontrolled landfills. The effectiveness of the introduction was evaluated through Generalised Linear Models based on the differences in the abundance of mosquitoes monitored through oviposition traps. In addition in 2010 a larval survey was carried out. In total 3720 dwellings were visited and 820 householders were interviewed. The results showed the number of eggs significantly reduced in the intervened areas in 2008-2009 when compared to the control ones. In 2008, the accumulate median of eggs was 175 and 272 in the intervention and control areas, respectively. In 2009, these medians were 884 and 1668 eggs. In the three study years an association was observed between some environmental factors, such as premises with vegetable garden (15%; CI 95%: 9-20%), stacked materials (15%; CI 95%: 9-20%), coops (5%; CI 95%: 2-8%) as well as commercial premises (11%; CI 95%: 7-15%), and sites with works (3%; CI 95%: 1-6%), with the detection of larval breeding containers. The larval density surveys highlight small containers (≤0.5 l) as preferred breeding sites for this species. In the peridomestic areas of the inspected premises, containers as scuppers, drums, solid waste and buckets were frequently found with Aedes albopictus larval breeding. Citizen cooperation proved to be an essential factor for success. A high level of collaboration by the home onwers, who allowed entry into their private dwellings was attained. These findings suggest that the strategy was effective in reducing the number of eggs. Finally, we propose a protocol building on our practical experience and research on the control of this species over the years of this study. This work might be a model for controlling the populations of Ae. albopictus in other municipalities of the Mediterranean region.
Makoond, Nirvan Chandra. "Structural diagnosis of masonry heritage : contributions to non-destructive testing, structural health monitoring and risk assessment." Doctoral thesis, Universitat Politècnica de Catalunya, 2020. http://hdl.handle.net/10803/670624.
Повний текст джерелаMuchos sitios de patrimonio cultural en todo el mundo consisten en estructuras de mampostería. Para asegurar la preservación de tales estructuras, la evaluación precisa de su condición estructural es a menudo de suma importancia. Sin embargo, las incertidumbres recurrentes con respecto a las propiedades de los materiales, así como la compleja interacción entre los distintos elementos estructurales a menudo hacen que esta sea una tarea desafiante. Como consecuencia, ha habido un esfuerzo de investigación considerable en el ámbito del desarrollo de métodos y herramientas que puedan facilitar esta tarea, y los expertos responsables de la evaluación de estructuras de mampostería generalmente necesitan sopesar la información de diversos estudios de diagnóstico antes de decidir el mejor curso de acción para su conservación. Las fuentes típicas de información son fuentes históricas, inspecciones in situ, ensayos no destructivos, auscultación estructural (SHM, del inglés Structural Health Monitoring) y el análisis estructural, entre otros. En una primera instancia, el trabajo de investigación presentado en esta tesis contribuye a la mejora de algunos métodos clave para el análisis de estructuras de mampostería. Se abordan temas específicos relacionados con los ensayos de materiales, los ensayos de vibración de estructuras y el SHM. Posteriormente, esto conduce al desarrollo de herramientas específicas de apoyo a la toma de decisiones que pueden ayudar en la toma de decisiones para la mitigación de riesgos. El trabajo de investigación realizado en el campo de los ensayos de materiales ha implicado un estudio experimental sobre las propiedades dinámicas elásticas de los componentes de mampostería de ladrillo, que se sabe que difieren de sus contrapartes estáticas. A pesar de ser una propiedad de deformación fundamental, la determinación experimental del módulo elástico estático en compresión para los componentes de la mampostería de ladrillo sigue siendo una tarea desafiante. Ello se debe principalmente a las dificultades inherentes en la medición precisa de las deformaciones en el rango de deformación elástica de materiales frágiles. Como resultado, las estimaciones del módulo estático muestran generalmente una dispersión mucho mayor que las involucradas en la determinación del módulo elástico dinámico. Aunque se prefiere la propiedad estática para las verificaciones estructurales comunes, la relación entre las dos aún no se comprende bien para los componentes típicos de mampostería de ladrillo. De hecho, existen muy pocos estudios que evalúen la idoneidad de diferentes técnicas para estimar las propiedades dinámicas elásticas de estos materiales. Como tal, actualmente hay muy poca orientación disponible sobre cómo estimar de manera fiable estas propiedades para dichos materiales. Tras una campaña experimental para determinar los módulos dinámicos elásticos y de corte de una variedad de ladrillos y morteros, esta investigación propone un procedimiento robusto basado en la combinación de dos métodos de ensayo no destructivos para estimar de manera fiable estas propiedades dinámicas. Además, también se proporciona una expresión empírica para estimar el módulo de elasticidad estático de los componentes de mampostería de ladrillo a partir de su contraparte dinámica. Con respecto a ensayos de vibración de estructuras, el presente estudio considera específicamente campanarios de mampostería y las técnicas de análisis modal operacional (OMA, del inglés Operational Modal Analysis)) utilizadas para extraer parámetros modales a partir de adquisiciones. A pesar de avances significativos en las técnicas de OMA, la precisión de las estimaciones resultantes de las pruebas de vibración aún depende en gran medida en las condiciones de la prueba, la calidad de la adquisición y las técnicas empleadas para la estimación de parámetros modales. Este trabajo tuvo como objetivo, en primer lugar, diseñar un sistema y programa de adquisición adecuados para ensayos de vibración del campanario de la Seu Vella en Lleida, Cataluña. Se investigaron varias técnicas de identificación de sistemas y de análisis modal y se discuten las más adecuadas para identificar parámetros modales particulares en diferentes condiciones de adquisición. El componente de SHM de esta investigación se ha centrado en el análisis de datos de sistemas de SHM estáticos que implican la medición continua de parámetros clave de variación lenta durante largos períodos de tiempo. Las estructuras patrimoniales de mampostería a menudo se ven afectadas por mecanismos lentos de deterioro irreversible que pueden poner en peligro la estabilidad estructural en un futuro próximo. El SHM estático tiene el potencial de identificar tales mecanismos en etapas tempranas. Ello puede facilitar enormemente la implementación de medidas preventivas y correctivas adecuadas que pueden ser críticas para asegurar que tales estructuras se preserven para las generaciones venideras. Sin embargo, dado que los parámetros monitoreados generalmente experimentan variaciones estacionales reversibles del mismo orden de magnitud que los cambios causados por mecanismos activos, la identificación de estos últimos es a menudo una tarea difícil. El Capítulo 5 de esta tesis presenta un procedimiento de análisis de datos automatizado totalmente integrado para sistemas completos de SHM estáticos que utilizan modelos de regresión lineal dinámica para filtrar los efectos causados por variaciones ambientales. El método no solo produce tasas de evolución estimadas, sino que también clasifica las respuestas monitoreadas en estados predefinidos de evolución. El procedimiento se ha utilizado con éxito para identificar áreas vulnerables en dos importantes estructuras patrimoniales medievales en España, a saber, la catedral de Mallorca y la iglesia del monasterio de Sant Cugat. Finalmente, todos los hallazgos anteriores se utilizan para la elaboración de herramientas de toma de decisiones multicriterio (MCDM, del inglés Muli-Criteria Decision-Making) destinadas a mejorar la objetividad, claridad y transparencia de las decisiones de mitigación de riesgos para estructuras patrimoniales de mampostería. Se propone un procedimiento sistemático de evaluación de riesgos que involucra el cálculo de dos índices MCDM: un índice relacionado con el riesgo estimado de daño y otro con la incertidumbre detrás de esta estimación. También se incluyen aplicaciones a varios casos de estudios para demostrar la utilidad de las herramientas propuestas
Un gran nombre de llocs de patrimoni cultural consisteixen en estructures de maçoneria. La responsabilitat comuna de protegir aquestes estructures és ara àmpliament reconeguda i, sovint, és fonamental una avaluació acurada de la seva condició estructural actual per tal d’assegurar tal protecció. No obstant això, en molts casos, les incerteses recurrents en les propietats dels materials i la complexa interacció entre elements estructurals converteixen l’avaluació de la seguretat estructural en una tasca difícil. Com a conseqüència, hi ha hagut un considerable esforç investigador sobre el desenvolupament de mètodes i eines que puguin facilitar aquesta tasca, i els experts responsables de l’avaluació de la seguretat d’estructures del patrimoni de maçoneria necessiten normalment contrastar informació provinent de diverses activitats de diagnosi abans de decidir les millors actuacions per a la seva preservació. Les fonts típiques d’informació són documents històrics, inspeccions in situ, assajos no destructius, monitorització de l’estructura (SHM, de l’anglès Structural Health Monitoring), i anàlisi estructural, entre altres. En una primera instància, el treball de recerca presentat en aquesta tesi contribueix a la millora d’alguns mètodes clau per a l’anàlisi d’estructures de maçoneria. S’aborden temes específics relacionats amb l’assaig de materials, assajos de vibració d’estructures i SHM. Posteriorment, això condueix al desenvolupament d’eines específiques de suport a la presa de decisions que poden ajudar en la presa de decisions per a la mitigació de riscos. La recerca realitzada en el camp dels assajos de materials va implicar un estudi experimental de les propietats elàstiques dinàmiques de constituents de la fàbrica de maó, de les quals es coneix que difereixen de les estàtiques. Malgrat ser una propietat de deformació fonamental, la determinació experimental del mòdul elàstic estàtic a la compressió per a constituents de maçoneria de maó és encara una tasca desafiant. Això és principalment a causa de les dificultats vinculades a la forma exacta de mesurar tensions en el camp de deformació elàstic dels materials fràgils. Com a resultat, estimacions del mòdul estàtic mostren usualment una major dispersió que les estimacions obtingudes per al mòdul elàstic dinàmic. Tot i que la propietat estàtica és preferida per a verificacions estructurals comunes, encara cal entendre la relació entre la dues per a constituents de maçoneria de maó típics. De fet, hi ha molt pocs estudis que avaluïn la idoneïtat de diferents tècniques per a estimar les propietats elàstiques dinàmiques d’aquests materials. Com a tal, actualment no hi ha gaires orientacions disponibles per a estimar de manera fiable aquestes propietats per a tals materials. Després d’una campanya experimental per a determinar el mòdul elàstic dinàmic i de cisalla d’una varietat de materials constituents de maçoneria de maó, aquest treball proposa un procediment robust basat en la combinació de dos mètodes d’assaig no destructiu per a una estimació fiable d’aquestes propietats dinàmiques. A més a més, també es proporciona una expressió empírica per estimar el mòdul elàstic estàtic de constituents de fàbrica del maó a partir del seu homòleg dinàmic. Respecte als assajos de vibració, el present estudi tracta de campanars de maçoneria i de tècniques d’anàlisi modal operacional (OMA, de l’anglès Operational Modal Analysis) utilitzades per a extreure paràmetres modals (freqüències naturals, modes de vibració, i coeficients d’amortiment) a partir d’assajos d’adquisició. Malgrat avanços significatius en la identificació de sistemes i les tècniques d’anàlisi modal, la precisió d’estimacions de paràmetres modals resultants d’assajos de vibració d’estructures encara són altament dependents de les condicions de l’assaig, la qualitat de l’adquisició i les tècniques emprades per a l’estimació dels paràmetres modals. Per tal d’entendre millor els efectes reals d’aquests factors en la pràctica, aquest treball ha dissenyat un sistema d’adquisició adequat i un programa per a l’assaig de vibració del campanar de la Seu Vella a Lleida, Catalunya. Dues freqüències naturals, incloent la fonamental, van ser clarament identificats a partir de les vibracions adquirides. Aquests resultats es van utilitzar per a calibrar un model d’elements finits de l’estructura i per a estimar el mòdul elàstic dinàmic del material de la torre. Es van investigar diverses tècniques d’identificació de sistema i d’anàlisi modal, i es discuteixen les més adequades en diferents condicions d’assaig. La part relacionada amb la monitorització en aquest treball s’ha enfocat particularment en l’anàlisi de dades obtingudes a partir de sistemes estàtics de SHM que consisteixen en la mesura contínua de paràmetres clau de variació lenta sobre períodes de temps llargs. Les estructures de patrimoni de maçoneria es veuen sovint afectades per mecanismes de deteriorament irreversibles i lents que poden posar en risc l’estabilitat estructural en un futur pròxim. El SHM estàtic té el potencial d’identificar tals mecanismes en etapes primerenques. Això pot facilitar la implementació de mesures preventives i de rehabilitació adequades, les quals poden ser crítiques per assegurar que tals estructures siguin preservades per a futures generacions. Tot i això, donat que els paràmetres controlats experimenten variacions estacionals reversibles del mateix ordre de magnitud com els canvis causats per mecanismes actius, la identificació d’aquests mecanismes és sovint una tasca difícil. Aquesta tesi presenta un procediment plenament automatitzat per a l’anàlisi de dades per a sistemes de SHM estàtics, el qual utilitza models de regressió lineals dinàmics per filtrar els efectes causats per variacions ambientals. El mètode no només produeix una estimació de les taxes d’evolució, sinó que també classifica les respostes monitorejades en diferents estats d’evolució predefinits. El procediment ha estat utilitzat amb èxit per a identificar àrees vulnerables en dos important estructures de patrimoni medieval a Espanya: la catedral de Mallorca i l’església del monestir de Sant Cugat. Finalment, totes les troballes anteriors s’utilitzen per a l’elaboració d’eines de presa de decisió multicriteri (MCDM, de l’anglès Multi-Criteria Decision-Making) destinades a millorar l’objectivitat, claredat i transparència de les decisions de mitigació de riscos per a estructures del patrimoni de maçoneria. Es proposa un procediment sistemàtic d’estimació de risc estructural que implica la computació de dos índexs MCDM: un índex relacionat amb el risc estimat de dany, i un altre relacionat ambla incertesa darrere d’aquesta estimació. Les aplicacions a diversos casos d’estudi també s’inclouen per demostrar la utilitat de les eines proposades.
Sung, Bi-Shiung, and 宋碧雄. "Preparation of Optical Absorber CuGaS2 Thin Films by Non-vacuum Processes for Solar Cells Applications." Thesis, 2011. http://ndltd.ncl.edu.tw/handle/vyew38.
Повний текст джерела國立虎尾科技大學
材料科學與綠色能源工程研究所
99
The thesis is focused on the application of CuGaS2 for solar cell absorber layer materials. In this study, the nanoparticle ink is prepared using wet-ball milling, and then the ink is deposited on a substrate to form a precursor layer by spin coating. The ink consists of two compound powders, CuS and Ga2S3. By adjust Cu/Ga ratio of CuS to Ga2S3. The precursor layer is placed in RTA furnace, and then heated at the temperature between 400℃ and 800℃ to form the compound layer with chalcopyrite structure. Non-vacuum processing is capable of reducing the cost of manufacturing significantly. CGS2 thin film with the full width at half maximum becoming narrow as the Cu content increases. The mean crystallite size also increases when Cu/Ga ratio is increased. Some displacement towards higher diffraction angles is detected when the Cu content increases. According to the original composition of Cu/Ga ratio, the prepared precursor samples can be classified to two types: Cu-rich and Cu-poor samples based. Microstructural studies are carried out using X-ray diffractometer. The analysis result shows that these samples have chalcopyrite structure. We have developed a novel technique for fabricating CuGaS2 thin film without long heat treatment and selenization. Based on the analysis results of this experiment, CuGaS2 thin film with chalcopyrite structure can be obtained by heating at 650℃ for 10 minutes.
CHEN, WEI, and 陳瑋. "Epitaxial Growth of CuGaSe2 Thin Film." Thesis, 1995. http://ndltd.ncl.edu.tw/handle/76938742942880955360.
Повний текст джерелаTsai, Kenny, and 蔡坤益. "Improved quality of CuGaSe2 epitaxial thin film." Thesis, 1999. http://ndltd.ncl.edu.tw/handle/72349778972592564614.
Повний текст джерелаChien-Hung, Lin, and 林建宏. "A study on interdiffusion of CuGaSe2/CuInSe2." Thesis, 1999. http://ndltd.ncl.edu.tw/handle/24605043863286892308.
Повний текст джерелаLee, Yu-Chin, and 李昱嶔. "Characteristics of P-type CuGaO2 Optoelectronic Semiconductor." Thesis, 2015. http://ndltd.ncl.edu.tw/handle/83771986340068153857.
Повний текст джерела亞洲大學
光電與通訊學系
103
In this study, we prepared CuGaO2 film by using sputtering method and the annealing under controlled nitrogen atmosphere, with the attempt to identify the structure and optoelectronic properties. During the Cu-Ga-O phase change, CuGa2O4 and CuO were the intermediate phases of the reaction for forming CuGaO2, the temperature of CuGaO2 formation is 750°C. CuGaO2 had its structure remaining steady at high temperature, and had its cross-section formed by stacked polygonal microstructure. With the increase of the annealing temperature, the CuGaO2 film had its surface roughness, average grain size and direct band gap increased. The CuGaO2 films had its surface roughness values of 5.70~7.31 nm. The average CuGaO2 grain sizes were 35.59~39.02 nm. When CuGaO2 films were annealed at 750, 800, 850, and 900°C, its direct band gaps were 3.45, 3.50, 3.64, and 3.65eV, respectively. CuGaO2 absorbed mainly the photons with short wavelengths. The CuGaO2 film exhibited transmittance of 68% at a wavelength of 800nm. The positive Hall coefficient proves that the CuGaO2 is a p-type semiconductor.
Permanasari, Rina. "Electrochemical deposition of thin film CuGaSe��� for photovoltaics." Thesis, 2004. http://hdl.handle.net/1957/33321.
Повний текст джерелаGraduation date: 2004
LAI, HSIN CHIH, and 賴新枝. "PL Spectrums of CuInSe2 and CuGaSe2 Thin Films." Thesis, 1996. http://ndltd.ncl.edu.tw/handle/12924407775684672963.
Повний текст джерелаChao, Bo-Heng, and 趙伯亨. "Device modeling and analysis of CuGaSe2 solar cells." Thesis, 2011. http://ndltd.ncl.edu.tw/handle/91360894511654594266.
Повний текст джерела國立東華大學
電機工程學系
99
The numerical simulation of CuGaSe2/CdS photovoltaic devices was studied by using AMPS. The simulated results of the energy band diagram and performance parameters for the CuGaSe2 (CGS) solar cells were analyzed. The effects of the interface properties, buffer properties, and conduction band offset between CdS and CGS films on the CGS solar cell were investigated. The effects of various buffers including CdS, ZnS, In(OH,S), or ZnMgO films on the performance of CGS solar cells were studied.
Chen, Chien-Ming, and 陳建銘. "Fabrication of CuGaSe2/Si heterostructures for solar-cell applications." Thesis, 2016. http://ndltd.ncl.edu.tw/handle/62378035998612047542.
Повний текст джерела國立中山大學
材料與光電科學學系研究所
104
For the composition control and testing electric properties, polycrystalline CuGaSe2 (CGSe) films with near-stoichiometric compositions were deposited by three-source co-evaporation on glass without the substrate rotation. XRD analysis veried that the film is single phase with the chalcopyrite structure. From Cu-rich to Ga-rich regions for the film grown on a glass substrate,the film resistivities varied from 3.7x10-1 Ω‧cm to 7.4x104 Ω‧cm. Further experiments on the formation of Ohmic contacts onto CGSe films indicated that the remaining Cu-Se phase on the surface of Cu-rich CGSe could improve the contact properties for the film attached with Mo metal electrodes. Since the successful epitaxial growth should be demonstrated prior to device fabrication, Cu-rich CGSe(p-type CGSe) films were grown on (100) n-type Si wafers.XRD analysis reveal that the c-axis of tetragonal unit cell aligned parallel to the substrate surface to lower the strain energy and thus leaded to the formation of orientation domain structure. For the films grown at 550℃, the XRD peak of CGSe was broden and asymmetric indicating an interduffusion at the CGSe/Si interface. Auger depth profiling showed that a conderable amount of Si was diffused into CGSe. Considering in a Cu-rich CGSe that Si might incorporate into the lattice site of Ga and became as a donor, which could compensate the acceptor in p-type CGSe. This would seriously degrade the junction properties of p-CGSe/n-Si device structure. It is strongly suggested that a low-temperature process such as photo-assited MBE should be employed for the film growth. Keywords:Molecular beam deposition,orientation domain structure,CuGaSe2 epitaxy, CuGaSe2/Si heterojunction solar cell
Meeder, Alexander [Verfasser]. "Defektspektroskopie an CuGaSe2 aus der halogenunterstützten Gasphasenabscheidung / von Alexander Meeder." 2004. http://d-nb.info/970273320/34.
Повний текст джерелаFischer, Daniel [Verfasser]. "Eigenschaften von CuGaSe2-Dünnschichten hergestellt mit chemischer Gasphasenabscheidung / von Daniel Fischer." 2000. http://d-nb.info/961806974/34.
Повний текст джерелаGerhard, Andreas [Verfasser]. "Elektrische Defektspektroskopie an CuGaSe2 und verwandten Halbleiterdünnschichten / vorgelegt von Andreas Gerhard." 2000. http://d-nb.info/961410752/34.
Повний текст джерелаGu, GinLern, and 古俊能. "A Study on Growth and Properties of Epitaxial CuGaSe2 Thin Films." Thesis, 1999. http://ndltd.ncl.edu.tw/handle/08728161429271529009.
Повний текст джерела國立中山大學
材料科學研究所
87
CuGaSe2 chalcopyrite compound was grown heteroepitaxially on (001)GaAs substrate by molecular beam epitaxy (MBE) system. Phase identification and crystalline orientation of thin films were examined by X-ray diffraction measurement. Surface morphology and microstructure were observed by electron microscopy. Chemical composition was measured by electron probe microanalyzer (EPMA). Optical and electrical properties were characterized by photoluminescence (PL) measurement, photoreflectance (PR) measurement, and four-point probe method. Epitaxial and second phase free films can be obtained by the control of substrate temperature, growth rate, and film composition. Antiphase domains present in as-grown films. PL spectra were affected obviously by composition. In Cu-rich films, PL showed two remarkable peaks at 1.71 eV and 1.67 eV which were attributed to exciton recombination and conduction band-to-acceptor transition, respectively. In Ga-rich films, an intense peak due to a donor-to-acceptor pair transition was observed at 1.62 eV. Energies of A, B, and C excitons associated with three uppermost valence bands were determined from analysis of PR spectra. Resistivity of CuGaSe2 films could be ranged from 10-1 to 105 -cm by varying Cu/Ga ratio.
Deniozou, Thalia [Verfasser]. "Properties of the CuGaSe2 and CuInSe2 (001) surface / vorgelegt von Thalia Deniozou." 2005. http://d-nb.info/978153707/34.
Повний текст джерелаSchuler, Steffen [Verfasser]. "Transporteigenschaften und Defekte in polykristallinen CuGaSe2-Schichten und Heterostrukturen / von Steffen Schuler." 2002. http://d-nb.info/966078659/34.
Повний текст джерелаKlenk, Markus [Verfasser]. "CuGaSe2-Absorberschichten aus mehrstufigen Prozessen : Materialcharakterisierung und Solarzellenherstellung / vorgelegt von Markus Klenk." 2001. http://d-nb.info/963488686/34.
Повний текст джерелаChuang, Wen-Jie, та 莊雯倢. "Numerical simulation of CuInSe2/CuGaSe2 and CuInSe2/α-Si:H tandem solar cells". Thesis, 2009. http://ndltd.ncl.edu.tw/handle/80918213970436640941.
Повний текст джерела國立東華大學
電子工程研究所
97
In this thesis, we research the impacts of the top cell performance on the efficiency of tandem solar cells by numerical study. The device physics and parameters of the top cells as the input variables for the device simulation tool of AMPS-1D to study the performance of thin-film tandem solar cells. The band gap energy of the absorber layer for the top cells is employed as the variables to improve the conversion efficiencies of the tandem solar cells. In order to understand the effects of device loss, firstly we vary the junction parameters of CdS/CuGaSe2 solar cells by considering the surface-defect-layer model and Cd-diffusion model for the investigation of device performance. Secondly we change the thickness and bandgap energy of the intrinsic amorphous silicon absorber layer of thin-film solar cells, and discuss the relationship between the amorphous silicon material properties and the p-i-n structure for the amorphous silicon solar cells. In this work, we simulate the best efficiencies of thin-film CuGaSe2 solar cells and of thin-film amorphous silicon solar cells are 13.4%, and 8.0%, respectively.
Chen, Ching-yun, and 陳靖允. "The Study of theCuInSe2 Characteristics and The Synthesis of CuGaSe2 Nano Powders." Thesis, 2006. http://ndltd.ncl.edu.tw/handle/32551579881671454234.
Повний текст джерела國立中山大學
材料科學研究所
94
In this experiment,we used the solvothermal method that described by Y.Qian et al,to synthesize nano powder which have different morphology.We had demonstrated it that by controlling and changing the temperature,reaction time and washing agents,to control the size and it leads to the change of the energy gap.In others,we changed the ,and used the same method to synthesize CuGaSe2 powder.It was used to improve the efficirncy of the solar cell devices. The synthetic temperature 180℃ and rection time 48hrs are the best condition in nano spherical powder experiment.The synthetic temperature 180℃ and reaction time 42hrsare the best condition in nano rods experiment.The synthetic temperature 210℃ and reation time 24hrs,we synthesize CuGaSe2.And in the kinetic mechanism of nano powder,we think that the second phase is the important factor that influence the growth of nano poweder,and also influence the size of powder.
Liu, Yi-heng, and 劉以珩. "Design of a Si-Ge interlayer for CuGaSe2/Si heterojunction solar cells." Thesis, 2017. http://ndltd.ncl.edu.tw/handle/8ghv47.
Повний текст джерела國立中山大學
材料與光電科學學系研究所
106
Current silicon solar cell is developing towards ultra-thin feature for cost lowering, recombination suppressing and potential flexible applications. In this work, we examine the viability of chalcopyrite materials assisting ultra-thin solar cells performance with simulation software AFORS-HET. P type silicon with n type surface doping is support with CISe for light absorption, between them compositional-variated SiGe buffer layer to lower lattice mis-match (SCH-1 layout). Simulation shows Ge induces narrow bandgap and large energy barrier, witch severely reduce Isc. By replacing buffer layer with InSe passivation layer to resolve band structure issues, p-cSi+InSe+CISe design reaches 30% efficiency while remaining under 10μm, being the most promised design, and provided with utmost fabrication value. N type silicon is matched with CGSe, CIGSe, n-type CISe and SiGe buffer layer forming CGSe(CIGSe) +buffer +n-cSi+buffer+CISe heterojunction cell (SCH-2 design), both SiGe buffer layers form energy barrier and greatly hinder hole transportation. Replacing lower buffer with InSe forms reverse field, thus remove CISe, redesigned CIGSe+buffer+150μm cSi structure also failed to reach 20% due to barrier problems from SiGe buffer. CGSe possesses 1.66eV band gap, forming an even higher energy barrier after contacting with SiGe buffer, cancel out the benefit of CISe. After removing CISe and substitute SiGe with amourphous SiGe to bridge band structure between Si and CGSe, CGSe+a-SiGe +150μm n-cSi structure can reach 24.21% efficiency. However, the lack of CISe and ultra thin CGSe of optimized cell does not differ itself from other silicon-based solar cells.
Bauknecht, Andreas [Verfasser]. "CuGaSe2 für die Anwendung in der Photovoltaik : metallorganische Gasphasenepitaxie und optische Charakterisierung / von Andreas Bauknecht." 1999. http://d-nb.info/96112654X/34.
Повний текст джерелаChen, Chien-An, and 陳建安. "A Studey of Silicon Dioxide Deposited by Liquid Phase Deposition Method on CuInSe2 and CuGaSe2." Thesis, 2000. http://ndltd.ncl.edu.tw/handle/11431030504804507720.
Повний текст джерела國立中山大學
材料科學研究所
88
In this paper, we use a room temperature processing system, Liquid Phase Deposition(LPD) method, to grow silicon dioxide. The advantages are cheap equipment, low temperature growth, and no thermal stress. The quality is good enough to be used in IC devices. To inverstigate the properties of silicon Dioxide, we have done different physical and chemical test, including AES,TEM,FTIR,P-etch rate. We used the high frequency C-V curve to study the interface properties. The leakage current help to clarify the film quality. Moreover, we also discuss the growth mechanism in order to more understanding of LPD method.
Liao, Shih-Yun, and 廖士運. "Preparation and Characterization of chalcopyrite CuGaSe2 polycrystalline thin films for the photovoltaic solar cells materials." Thesis, 2009. http://ndltd.ncl.edu.tw/handle/tw5wqw.
Повний текст джерела國立虎尾科技大學
材料科學與綠色能源工程研究所
97
Copper indium gallium selenide (CuIn(1-x)GaxSe2, CIGS) has attracted much attentions for its applications in thin film solar cells. Copper gallium selenide (CuGaSe2) thin film has been used in Mo/CGS/CIS/CdS/ZnO solar cell fabrication as a absorber layer and it plays an important role in improving efficiency. We propose a method to prepare CuGaSe2 films by using mechanical milling to form a paste or an ink which is suitable for coating on silicon substrates in the form of a thin precursor layer with dual-source precursors, Cu2Se and Ga2Se3. Composition control, or the control of the Cu/Ga metallic mol ratio is an important concern in chalcopyrite film growth. Subsequently, these precursor layers were annealed in a argon atmosphere at a temperature range from 300 to 800℃ for 10 min. Heat treatment steps were used to convert the powdery precursor layers into solar-cell-grade chalcopyrite absorbers. The Cu2Se and Ga2Se3 are the precursors which are deposited form this experimentation and distinguish thin films between Cu-rich and Cu-poor by Cu/Ga ratio. The structure of CuGaSe2/CIGS films was determined by XRD. It is found that the films are at single chalcopyrite phase. The optical bandgap of CIS/CIGS films could be adjusted from 1.04 eV to 1.68 eV by changing the growth conditions. Therefore, the tandem cell of CIGS-based solar cells can be fabricated by using this technique and may improve the conversion efficiency over 25% in the future. In this work, we demonstrate new techniques of growing CuGaSe2 and CIGS films. In our study, Cu2Se and Ga2Se3 powders were mixed with precursor pastes and precursor layers were selenized in a argon atmosphere. No toxic gases were used and produced during the whole testing process. Chalcopyrite CuGaSe2 was formed at 650℃/10 min and the crystalline of this phase was improved as temperature rises. Thus, the development of CIGS-based solar cells and related devices can easily be achieved by using Ball Milling/Printing technique with a single in-line process.
Fiedeler, Ulrich [Verfasser]. "Rekombination und Diffusion in CuGaSe2-Solarzellen : Photolumineszenz- und Quanteneffizienzuntersuchungen an MOCVD gewachsenen Absorbern / von Ulrich Fiedeler." 2001. http://d-nb.info/963975234/34.
Повний текст джерела