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Статті в журналах з теми "Cu2SnS3 Films"
Reddy, Tippasani Srinivasa, and M. C. Santhosh Kumar. "Influence of Substrate Temperature on Structural and Optical Properties of Co-Evaporated Cu<sub>2</sub>SnS<sub>3</sub>/ITO Thin Films." Materials Science Forum 1048 (January 4, 2022): 189–97. http://dx.doi.org/10.4028/www.scientific.net/msf.1048.189.
Повний текст джерелаDias, Sandra, and S. B. Krupanidhi. "Temperature dependent electrical behaviour of Cu2SnS3 films." AIP Advances 4, no. 3 (March 2014): 037121. http://dx.doi.org/10.1063/1.4869639.
Повний текст джерелаKuku, Titilayo A., and Olaosebikan A. Fakolujo. "Photovoltaic characteristics of thin films of Cu2SnS3." Solar Energy Materials 16, no. 1-3 (August 1987): 199–204. http://dx.doi.org/10.1016/0165-1633(87)90019-0.
Повний текст джерелаBerg, Dominik M., Rabie Djemour, Levent Gütay, Susanne Siebentritt, Phillip J. Dale, Xavier Fontane, Victor Izquierdo-Roca, and Alejandro Pérez-Rodriguez. "Raman analysis of monoclinic Cu2SnS3 thin films." Applied Physics Letters 100, no. 19 (May 7, 2012): 192103. http://dx.doi.org/10.1063/1.4712623.
Повний текст джерелаGhediya, Prashant R., Tapas K. Chaudhuri, Vidur Raj, Dhaval Vankhade, Hark Hoe Tan, and Chennupati Jagadish. "Electrical Properties of Compact Drop-Casted Cu2SnS3 Films." Journal of Electronic Materials 49, no. 11 (August 14, 2020): 6403–9. http://dx.doi.org/10.1007/s11664-020-08380-8.
Повний текст джерелаBayazıt, Tuğba, Mehmet Ali Olgar, Tayfur Küçükömeroğlu, Emin Bacaksız, and Murat Tomakin. "Growth and characterization of Cu2SnS3 (CTS), Cu2SnSe3 (CTSe), and Cu2Sn(S,Se)3 (CTSSe) thin films using dip-coated Cu–Sn precursor." Journal of Materials Science: Materials in Electronics 30, no. 13 (June 3, 2019): 12612–18. http://dx.doi.org/10.1007/s10854-019-01622-4.
Повний текст джерелаBouaziz, M., M. Amlouk, and S. Belgacem. "Structural and optical properties of Cu2SnS3 sprayed thin films." Thin Solid Films 517, no. 7 (February 2009): 2527–30. http://dx.doi.org/10.1016/j.tsf.2008.11.039.
Повний текст джерелаNaji, Iqbal S. "Impact of thickness and heat treatment on some physical properties of thin Cu2SnS3 films." Iraqi Journal of Physics (IJP) 14, no. 30 (February 3, 2019): 120–28. http://dx.doi.org/10.30723/ijp.v14i30.207.
Повний текст джерелаTiwari, Devendra, Tristan Koehler, Reiner Klenk, and David J. Fermin. "Solution processed single-phase Cu2SnS3 films: structure and photovoltaic performance." Sustainable Energy & Fuels 1, no. 4 (2017): 899–906. http://dx.doi.org/10.1039/c7se00150a.
Повний текст джерелаZaretskaya, E. P., V. F. Gremenok, V. A. Ivanov, A. V. Stanchik, O. M. Borodavchenko, D. V. Zhyhulin, S. Özçelik, and N. Akçay. "Phase Composition, Microstructure, and Optical Properties of Cu2SnS3 Thin Films." Journal of Applied Spectroscopy 87, no. 3 (July 2020): 488–94. http://dx.doi.org/10.1007/s10812-020-01028-9.
Повний текст джерелаДисертації з теми "Cu2SnS3 Films"
Belaqziz, Mohamed. "Association des procédés hydrothermal et CVD à courte distance pour l'élaboration de couches minces photovoltaiques à partir d'une source nanostructurée du composé Cu2SnS3." Thesis, Perpignan, 2018. http://www.theses.fr/2018PERP0007/document.
Повний текст джерелаThe Cu2SnS3 compound (CTS) is a semiconductor characterized by a direct band gap and a high optical absorption coefficient in the visible range. These properties make it one of the most attractive materials for thin-film photovoltaic (PV) applications. Compared to competing technologies, CTS derives its main benefits from the number and nature of its constituent elements. They are abundant and non-toxic. This encouraging trend is propitious for the development of future low cost and environmentally friendly solar cell technology. The aim of our study is to develop CTS thin films from the same nanostructured source material. To this end, we have have developed an original experimental procedure, by combining two simple, low-cost and environmentally friendly processes: Hydrothermal and Short-Range CVD. This approach has made it unnecessary to use the conventional costly processes presently employed
Dias, Sandra. "Quest for New Chalcopyrite Semiconductors for Photodetector Applications." Thesis, 2015. https://etd.iisc.ac.in/handle/2005/4557.
Повний текст джерелаChang, Shih-Chang, and 張世昌. "Synthesis of Cu2SnS3 and Cu2SnSe3 Absorbers for Thin-Film Solar Cell by Solvent-Thermal Refluxing Method and Annealing." Thesis, 2015. http://ndltd.ncl.edu.tw/handle/5dmc8c.
Повний текст джерела國立臺南大學
電機工程學系碩博士班
103
In this study, we investigated the ternary I–IV–VI compounds semiconductor layer synthesized by a simple and low-cost solvent-thermal refluxing method follow annealing. The thin films are suitable to be absorber layer of solar cells. At first, we fabricated the varied concentration of Cu-Sn-S precursor ink. After sulfurization, we obtained pure phase of CTS by sulfurizing the Cu-Sn-S precursor of the lower concentration. The CTS thin film is p-type with a carrier concentration of ∼5.23×1017 cm-3, and hole mobility of 14.2 cm2 V−1 s−1, which is suitable to be absorber layer of solar cells. We fabricated the Cu-Sn-Se precursor ink by different reaction time. At the longer reaction time, we obtained pure phase of CTSe. At the shorter reaction time, we obtained Cu2-xSe crystals and unformed Cu-Sn-Se groups. After selenization, the structures of Cu2SnSe3 were destructured and binary CuSe appeared. In contrast, after selenization, the precursors of short reaction time transform into pure Cu2SnSe3. The CTSe thin film is p-type with a carrier concentration of ∼1.9×1017 cm−3, and higher hole mobility of 13.66 cm2 V−1 s−1, which is suitable to be absorber layer of solar cells. In this study, we fabricated the ternary I–IV–VI compounds thin films by a simple and low-cost solvent-thermal refluxing method and and annealing.
Saragih, Albert Daniel, and Albert Daniel Saragih. "Investigation of Cu2SnSe3 and Mg-doped Cu2SnSe3 Thin Films for Photovoltaic Applications." Thesis, 2015. http://ndltd.ncl.edu.tw/handle/22800329344533239817.
Повний текст джерела國立臺灣科技大學
材料科學與工程系
103
Due to the energy crisis, we rush into the solar cell research and development. Fulfillment of energy is an issue that is always covered by each of the countries, coupled with the increasing rate of world population growth the energy consumption will continue to increase. Solar cell is one of the best choices, solar cells has been studied for more than fifty years but the last decade has seen the drastic growth in the research and development in the sector and because of that, now we have so many different types of solar cells design with megawatt production capabilities. Modern solar cells design can be fabricated using different materials and can have different structure. Cu2SnSe3 (CTSe) is a potential candidate for absorber materials of solar cells. In this study, we report the effects of doping Mg on the structural, electrical, and optical properties of these CTSe thin films for devolepment of highly efficient solar cells for long term energy production. Thin films of the CTSe and Mg-doped CTSe were sputtered with two different targets of Cu and Sn or Cu-Mg and Sn, respectively , followed by the selenization at 500-600 oC under the Se vapor. The films were characterized by FE-SEM, EDS, XRD, and Hall measurement and other analyses to explore the effects of Mg-doping with different ratios on CTSe thin film. All the thin films CTSe and Mg-doped CTSe were deposited by DC magnetron co-sputtering at room temperature with the powers of 26 W for Cu target and 16 W for Sn target for CTSe thin films and 26 W for Cu-Mg target and 16 W for Sn target for Mg-CTSe for 1hour. A two-step selenization process was executed at 300 oC and holding period of 30 min before reaching to three different selenization temeperatures of 500 oC, 550 oC, and 600 oC. The selenization procedure had been done in Se ambient arisen from SnSe2 pellet. Almost all thin films selenized at 550 oC-selenized films had the composition closed to expected stoichiometry of Cu2SnSe3. The major XRD diffraction peaks appeared at 2θ of 26.8°, 44.8°, 53.2°, 65.5°, and 72.3° which could be attributed to (111), (220), (311), (400), and (331) planes, respectively. All the diffraction peaks of CTSe could be assigned to the crystal planes from standard structure of Cu2SnSe3 (JCPDS No.89-2879). The optical band gaps obtained by extrapolating the linear region of the absorption spectra did not significantly change. The optical absorption studies indicated a direct band gap of 1.18 ~ 1.20 eV. Undoped CTSe and Mg-0.1-CTSe films selenized at 550 oC exhibited p-type conductivity and they were n-type for Mg-0.2-CTSe and Mg-0.3-CTSe. The Hall measurements for carrier concentration and Hall mobility were 2.54×1019 cm−3 and 681 cm2V−1s−1, respectively, for undoped CTSe film, 9.08 ’ 1018 cm-3 and 71 cm2V-1s-1 for Mg-0.1-CTSe, 1.18 ’ 1019cm−3 and 11 cm2V−1s−1 for Mg-0.2-CTSe, and 1.06 ’ 1019cm−3 and 43 cm2V−1s−1 for Mg-0.3-CTSe, after selenization at 550 oC.
Huang, Wei-di, and 黃瑋迪. "Preparation and characterization of sputtered Cu2SnSe3 thin films." Thesis, 2009. http://ndltd.ncl.edu.tw/handle/04908759369258486576.
Повний текст джерела國立臺灣科技大學
材料科技研究所
97
Recently, the research of solar cells is much more attractive and its technological progress is very fast. Although solar cells have reached a good conversion efficiency, high cost has limited their further applications. Lowering the cost with the finding of new materials is necessary. Although there are many CuInSe2 replacements, low-cost Cu2SnSe3 thin films with an energy band gap of 0.7-0.9 eV have not been seriously investigated for the absorption layer of the solar cells. In this study, the effects of the target composition, substrate temperature, annealing temperature, and the Se compensating discs on the sputtered Cu2SnSe3 thin films are discussed. The physical characteristics of the Cu2SnSe3 thin films were invstigated by XRD, FE-SEM, and EDS XRD. Hall measurement and Absorption spectroscopy were used for the electrical and optical properties, respectively. The experimental results shows that the sputtered Cu2SnSe3 thin films deposited at 400oC followed by annealing at 500oC have a better performance. At this condition, the films are p-type and have well crystallized with a large grain size of 1-3 �慆, a direct energy gap of 0.7-0.8 eV, an absorption coefficient of 104 cm-1 before and after annealing, a carrier concentration of 5×1019 cm-3, and the highest carrier mobility of 8~10 cm2V-1s-1.
Liang, Yan-Cheng, and 梁晏誠. "Synthesis of I2-IV-VI3 Compound Cu2SnSe3 Thin Films by Printing Processes." Thesis, 2014. http://ndltd.ncl.edu.tw/handle/95mhdx.
Повний текст джерела國立虎尾科技大學
材料科學與綠色能源工程研究所
102
In this study, ternary Cu2SnSe3 thin films were synthesized by non-vacuum processes. First of all, Cu, Sn and Se elements with different ratio, were melted in quartz tubes at 1050 oC to form ingots from Cu-poor, stoichiometric to Cu-rich mixtures (Cu/Sn atomic ratio = 1.5, 2.0 and 2.5, respectively). Inks of the mixtures were made using wet-type ball milling, and printed onto a glass substrate to form a precursor film by spin coating. Then, the samples were heated with rapid thermal annealing(RTA) in a furnace at 300 to 550 oC, respectively, for 10 minutes. The compositions of the films were determined by inductively coupled plasma-mass spectrometer (ICP) and energy dispersive spectroscopy (EDS) measurements. Surface and cross-section morphologies were observed by scanning electron microscopy (SEM). The crystal structure of the films was analyzed by X-ray diffraction (XRD) and the band gaps were obtained by Photoluminescence (PLE) measurement. Optical properties were recorded by UV-Vis-NIR spectrometer. Based on the results of the experiments, the thin films (Cu/Sn atomic ratio = 1.5) with sphalerite structure were obtained by RTA 450 oC , 10 minutes. It also showed higher crystallinity with larger grain size, and the band gap was 1.00eV.
Wang, Hsuan-Kai, and 王宣凱. "The study of Cu2ZnSnSe4 thin film formation using Zn and Cu2SnSe3 bi-layers." Thesis, 2009. http://ndltd.ncl.edu.tw/handle/40821467329340243945.
Повний текст джерела國立成功大學
微電子工程研究所碩博士班
97
This thesis investigated the possible reaction route of quaternary semiconductor Cu2ZnSnSe4 (CZTSe) absorber synthesized by surface Zn diffusion to underneath Copper-Tin-Selenide ternary layer at 500oC. The electrical property of CZTSe was also investigated for the first time. In this thesis, Zn thickness and duration of annealing were optimized to fabricate near stoichiometric CZTSe film. Single phase CZTSe was produced by annealing 300 nm Zn/2.65 um Cu2SnSe3 at 500oC for 1.5 hours. Raman scattering analysis was used to identified the phase transformation from Cu2SnSe3 to CZTSe. It also showed that the synthesized film was single phase CZTSe without ZnSe binary compound. Hall measurement results showed that these films are p-type with low resistivity and high carrier concentration of 1021cm-3. Finally, the insufficient Se ratio problem was resolved by replacing the of Cu-Sn selenization temperature from 450oC to 250oC so as to increase the incorpoaration of Se with Cu and Sn to form CuSe2 and SnSe instead of ternary. CZTSe film with grain size up to 1.5 um and nearly stichiometric ratio was obtained.
Lai, Kai-Zhi, and 賴楷智. "Synthesis of Cu2ZnSn(SSe)4 Thin Films by Using Ternary Cu2SnSe4 and Binary ZnS Compounds." Thesis, 2015. http://ndltd.ncl.edu.tw/handle/b48d8z.
Повний текст джерела國立虎尾科技大學
材料科學與綠色能源工程研究所
103
The experiment is investigate on the application of Cu2ZnSn(SSe)4 for solar cell absorber layer materials. First of all, copper, tin, selenium the three elements, prepared by melting into the ternary mixture, and adding a binary synthesis (ZnS)compound to mix, the ink is prepared using wet-ball milling , Cu/Zn+Sn atomic ratio were 0.6、0.8、1、1.5,by spin coating. The precursor layer is placed in RTP furnace, and then heated at the temperature between 300 oC to 500oC,respectively, for 10minutes,prepared Cu2ZnSn(SSe)4 2-3μm thick film.In passing a high purity nitrogen gas under high temperature by diffusion。 The compositions of the films were determined by inductively coupled plasma-mass spectrometer(ICP)measurements,Surface and cross-section morphologies were observed by scanning electron microscopy.The crystal structure of the films was analyzed by X-ray diffraction .Optical properties were recorded by UV-Vis-NIR spectrometer. Based on the results of the experiments, the thin films (Cu/Zn+Sn atomic ratio = 0.8) with Better crystalline were obtained by RTA 500 oC , 10 minutes. It also showed higher crystallinity with larger grain size, and the band gap was 1.44eV.
Hu, Yi-Wei, and 胡逸威. "Synthetic hybrid nanoinks by solvothermal refluxing method and selenization for preparation of Cu2SnSe3(CTSe) thin film solar cell absorbers." Thesis, 2018. http://ndltd.ncl.edu.tw/handle/xw6udh.
Повний текст джерела國立臺南大學
電機工程學系碩博士班
106
Abstract In this paper, a simple, low-cost non-vacuum solvothermal refluxing method is used to obtain a I-IV-VI ternary compound Cu2SnSe3(CTSe) film after selenization heat treatment. The CTSe film is suitable as an absorber layer for light sensors and thin film solar cells. First, we successfully synthesized a mixed nano ink of Cu2Se and SnSe2 and CuSe and SnSe2 by adding a new organic solvent Polyetheramine(D400) by non-vacuum solvothermal reflux method, and both used a stoichiometric ratio of 2:1:3. The ratio of copper, tin and selenium was obtained by heat treatment by selenization to obtain a ternary single phase Cu2SnSe3(CTSe) film. The former has a selenization temperature of 550°C and the heating time is 5 minutes, while the latter has a selenization temperature of 550°C and a heating time of 15 minutes. Finally, because the quality of the film is not enough for us to make further applications, so we will try to look at the new preparation method to improve the crystallization and compactness of the film in the next chapter. Next, in order to improve the quality of the film, Cu2SnSe3(CTSe) single phase and CuSe and SnSe2 hybrid phase precursor film were successfully prepared by non-vacuum solvothermal refluxing method and centrifugal powders and blade coating. CTSe ternary single phase was obtained by rapid selenization heat treatment under pressure. The best conditions for the two groups are a selenization temperature of 500°C and a heating time of 60 minutes. Finally, compared to the experimental method in the previous chapter, we think this is a way to find an improvement. Although the crystallinity and compactness have a certain degree of improvement in quality, but the quality of the film after selenization may not be very stable, so we can still carry out more tests and compare the operation methods of the blade coating, to continue to do related applications.
CHANG, CHUNG-JUI, and 張崇睿. "Fabrication of Cu2SnSe3 Absorber with Hybrid Nanoinks for Thin-Film Solar Cell using Solvothermal Refluxing Method with Polyetheramine as Solvent." Thesis, 2017. http://ndltd.ncl.edu.tw/handle/61167330278400946128.
Повний текст джерела國立臺南大學
電機工程學系碩博士班
105
In this education, we examined the ternary I–IV–VI mixes semiconductor layer synthesized by a humble and low-cost solvent-thermal refluxing method follow annealing. The thin films are appropriate to be absorber layer of solar cells. Cu-containing ternary chalcogenides (Cu2SnSe3) were positively synthesized by stoichiometric amount of the preliminary resources via a simple and suitable solvent-thermal-reflux reaction of copper powder, tin powder with selenium powder in the time variety of 30min-12hr for 150℃、190℃、230℃. In this study, we firstly examine nonvacuum process polyetheramine synthesized Cu2SnSe3 (CTSe) nanoink creation device based on time reliant on phase development and particle nucleation and development. We fabricated the Cu-Sn-Se precursor hybrid nanoink by different reaction time. After selenization, the structures of Cu2SnSe3 were destructured and binary CuSe seemed. In contrast, after selenization, the precursors of short reaction time alter into pure Cu2SnSe3. The CTSe thin film is p-type with a carrier concentration of ∼1.9×1019 cm−3, and higher hole mobility of 13.66 cm2 V−1 s−1, which is suitable to be absorber layer of solar cells. In this study, we fabricated the ternary I–IV–VI compounds thin films by a simple and low-cost solvent-thermal refluxing method and and annealing.
Частини книг з теми "Cu2SnS3 Films"
Rahaman, Sabina, Jagannatha K. B., Thyagaraj Tanjavur, and Lakshmisagar. "Investigating the Effect of Annealing on the Properties of Cu2SnS3 Thin Films Using Spin Coating." In Current Approaches in Science and Technology Research Vol. 14, 106–11. Book Publisher International (a part of SCIENCEDOMAIN International), 2021. http://dx.doi.org/10.9734/bpi/castr/v14/2562f.
Повний текст джерелаТези доповідей конференцій з теми "Cu2SnS3 Films"
Kuku, Titilayo A., and Olaosebikan A. Fakolujo. "Photovoltaic Characteristics Of Thin Films Of Cu2SnS3." In 1986 International Symposium/Innsbruck, edited by Claes-Goeran Granqvist, Carl M. Lampert, John J. Mason, and Volker Wittwer. SPIE, 1986. http://dx.doi.org/10.1117/12.938349.
Повний текст джерелаPatel, Biren, Manmohansingh Waldiya, Ranjan K. Pati, Indrajit Mukhopadhyay, and Abhijit Ray. "Spray pyrolyzed Cu2SnS3 thin films for photovoltaic application." In 2ND INTERNATIONAL CONFERENCE ON CONDENSED MATTER AND APPLIED PHYSICS (ICC 2017). Author(s), 2018. http://dx.doi.org/10.1063/1.5033015.
Повний текст джерелаRaja, V. Sundara, U. Chalapathi, and S. Uthanna. "Growth and characterization of Cu2SnS3 thin films by spray pyrolysis." In INDIAN VACUUM SOCIETY SYMPOSIUM ON THIN FILMS: SCIENCE AND TECHNOLOGY. AIP, 2012. http://dx.doi.org/10.1063/1.4732382.
Повний текст джерелаPatel, Biren, R. Narasimman, Ranjan K. Pati, Indrajit Mukhopadhyay, and Abhijit Ray. "Preparation and characterization of Cu2SnS3 thin films by electrodeposition." In INTERNATIONAL CONFERENCE ON NANOMATERIALS FOR ENERGY CONVERSION AND STORAGE APPLICATIONS: NECSA 2018. Author(s), 2018. http://dx.doi.org/10.1063/1.5035248.
Повний текст джерелаRahaman, Sabina, Vikas Gowda R. D., Y. Madhavi G. Shenoy, V. Nitya Krishna, Saumya Shekhar, and Habibuddin Shaik. "Effect of annealing on the properties of Cu2SnS3 thin films using spin coating." In INTERNATIONAL CONFERENCE ON TRENDS IN MATERIAL SCIENCE AND INVENTIVE MATERIALS: ICTMIM 2019. Author(s), 2019. http://dx.doi.org/10.1063/1.5100686.
Повний текст джерелаSunny, Gincy, C. Sudha Kartha, and K. P. Vijayakumar. "Tuning of opto-electronic properties of Cu2SnS3 thin films through variation of stoichiometry." In SOLID STATE PHYSICS: Proceedings of the 58th DAE Solid State Physics Symposium 2013. AIP Publishing LLC, 2014. http://dx.doi.org/10.1063/1.4873100.
Повний текст джерелаReddy, G. Phaneendra, and K. T. Ramakrishna Reddy. "Sulfurization effect on optical properties of Cu2SNS3 thin films grown by two-stage process." In DAE SOLID STATE PHYSICS SYMPOSIUM 2016. Author(s), 2017. http://dx.doi.org/10.1063/1.4980717.
Повний текст джерелаEspinoza, Ignacio Estevez, Y. Matsumoto Kuwabara, M. Ortega Lopez, and J. Octavio Estevez Espinoza. "Phase composition of Cu2SnS3 thin films prepared by Ultrasonic Spray Pyrolysis as potential photovoltaic material." In 2018 15th International Conference on Electrical Engineering, Computing Science and Automatic Control (CCE). IEEE, 2018. http://dx.doi.org/10.1109/iceee.2018.8533900.
Повний текст джерелаNomura, T., T. Maeda, and T. Wada. "Preparation of Narrow Band-gap Cu2SnS3 and Cu2Sn(S,Se)3 and Fabrication of Their Films by Printing/High-pressure Sintering Process." In 2012 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2012. http://dx.doi.org/10.7567/ssdm.2012.ps-15-18l.
Повний текст джерелаRahaman, Sabina, M. Anantha Sunil, Habibuddin Shaik, and Kaustab Ghosh. "Influence of vacuum annealing on the properties of Cu2SnS3 thin films using low cost ultrasonic spray pyrolysis." In PROCEEDINGS OF THE INTERNATIONAL SEMINAR ON METALLURGY AND MATERIALS (ISMM2017): Metallurgy and Advanced Material Technology for Sustainable Development. Author(s), 2018. http://dx.doi.org/10.1063/1.5038717.
Повний текст джерела