Добірка наукової літератури з теми "Cu2SnS3"
Оформте джерело за APA, MLA, Chicago, Harvard та іншими стилями
Ознайомтеся зі списками актуальних статей, книг, дисертацій, тез та інших наукових джерел на тему "Cu2SnS3".
Біля кожної праці в переліку літератури доступна кнопка «Додати до бібліографії». Скористайтеся нею – і ми автоматично оформимо бібліографічне посилання на обрану працю в потрібному вам стилі цитування: APA, MLA, «Гарвард», «Чикаго», «Ванкувер» тощо.
Також ви можете завантажити повний текст наукової публікації у форматі «.pdf» та прочитати онлайн анотацію до роботи, якщо відповідні параметри наявні в метаданих.
Статті в журналах з теми "Cu2SnS3"
Budanov, Alexander V., Yury N. Vlasov, Gennady I. Kotov, Evgeniy V. Rudnev та Pavel I. Podprugin. "Формирование тонких пленок соединений Cu2SnS3 и Cu2SnSe3". Kondensirovannye sredy i mezhfaznye granitsy = Condensed Matter and Interphases 21, № 1 (5 березня 2019): 24–29. http://dx.doi.org/10.17308/kcmf.2019.21/713.
Повний текст джерелаAhamed, M. I., M. Ahamed, A. Sivaranjani, and S. Chockalingam. "Energy bandgap studies on copper chalcogenide semiconductor nanostructures using cohesive energy." Chalcogenide Letters 18, no. 5 (May 2021): 245–53. http://dx.doi.org/10.15251/cl.2021.185.245.
Повний текст джерелаLi, Cai Xia, Jun Guo, Danyu Jiang, and Qiang Li. "Synthesis and Characterization of Graphene/Cu2SnS3 Quantum Dots Composites." Advanced Materials Research 624 (December 2012): 59–62. http://dx.doi.org/10.4028/www.scientific.net/amr.624.59.
Повний текст джерелаRzaguliyev, Vidadi A., Oruj S. Kerimli, Dilbar S. Ajdarova, Sharafat H. Mammadov та Ozbek M. Aliev. "Фазовые равновесия в системах Ag8SnS6–Cu2SnS3 и Ag2SnS3–Cu2Sn4S9". Kondensirovannye sredy i mezhfaznye granitsy = Condensed Matter and Interphases 21, № 4 (19 грудня 2019): 544–51. http://dx.doi.org/10.17308/kcmf.2019.21/2365.
Повний текст джерелаPogue, Elizabeth A., Melissa Goetter, and Angus Rockett. "Reaction kinetics of Cu2-xS, ZnS, and SnS2 to form Cu2ZnSnS4 and Cu2SnS3 studied using differential scanning calorimetry." MRS Advances 2, no. 53 (2017): 3181–86. http://dx.doi.org/10.1557/adv.2017.384.
Повний текст джерелаIrshad Ahamed, M., and K. Sathish Kumar. "Studies on Cu2SnS3 quantum dots for O-band wavelength detection." Materials Science-Poland 37, no. 2 (June 1, 2019): 225–29. http://dx.doi.org/10.2478/msp-2019-0022.
Повний текст джерелаBUDANOV, A. V., YU N. VLASOV, G. I. KOTOV, YU V. SYNOROV, S. YU PANKOV, E. V. RUDNEV, V. E. TERNOVAYA, and S. A. IVKOV. "HETEROJUNCTION p-Cu2SnS3/n-ZnO." Chalcogenide Letters 17, no. 9 (September 2020): 457–59. http://dx.doi.org/10.15251/cl.2020.179.457.
Повний текст джерелаMammadov, Sharafat Gadzhiaga. "Phase formation in the Cu2SnS3-Sb2S3 system." Vestnik Тomskogo gosudarstvennogo universiteta. Khimiya, no. 18 (June 1, 2020): 18–26. http://dx.doi.org/10.17223/24135542/18/2.
Повний текст джерелаMammadov, Sharafat G. "Phase equilibrium in Cu2SnS3-Cu3SbS3 system." Vestnik Тomskogo gosudarstvennogo universiteta. Khimiya, no. 15 (December 1, 2019): 26–35. http://dx.doi.org/10.17223/24135542/15/3.
Повний текст джерелаde Wild, Jessica, Erika V. C. Robert, Brahime El Adib, and Phillip J. Dale. "Optical characterization of solution prepared Cu2SnS3 for photovoltaic applications." MRS Proceedings 1771 (2015): 151–56. http://dx.doi.org/10.1557/opl.2015.624.
Повний текст джерелаДисертації з теми "Cu2SnS3"
Lohani, Ketan. "Development of Cu2SnS3 based thermoelectric materials and devices." Doctoral thesis, Università degli studi di Trento, 2022. http://hdl.handle.net/11572/344345.
Повний текст джерелаMarquez, Prieto Jose. "Development of Cu2ZnSnSe4 and Cu2SnS3 based absorbers by PVD processes." Thesis, Northumbria University, 2016. http://nrl.northumbria.ac.uk/36010/.
Повний текст джерелаBelaqziz, Mohamed. "Association des procédés hydrothermal et CVD à courte distance pour l'élaboration de couches minces photovoltaiques à partir d'une source nanostructurée du composé Cu2SnS3." Thesis, Perpignan, 2018. http://www.theses.fr/2018PERP0007/document.
Повний текст джерелаThe Cu2SnS3 compound (CTS) is a semiconductor characterized by a direct band gap and a high optical absorption coefficient in the visible range. These properties make it one of the most attractive materials for thin-film photovoltaic (PV) applications. Compared to competing technologies, CTS derives its main benefits from the number and nature of its constituent elements. They are abundant and non-toxic. This encouraging trend is propitious for the development of future low cost and environmentally friendly solar cell technology. The aim of our study is to develop CTS thin films from the same nanostructured source material. To this end, we have have developed an original experimental procedure, by combining two simple, low-cost and environmentally friendly processes: Hydrothermal and Short-Range CVD. This approach has made it unnecessary to use the conventional costly processes presently employed
Доброжан, Олександр Анатолійович, Александр Анатольевич Доброжан, Oleksandr Anatoliiovych Dobrozhan, Анатолій Сергійович Опанасюк, Анатолий Сергеевич Опанасюк та Anatolii Serhiiovych Opanasiuk. "Синтез нанокристалических тетраподов Cu2SnSe3". Thesis, Издательство ЮЗГУ, Курск, Россия, 2014. http://essuir.sumdu.edu.ua/handle/123456789/38313.
Повний текст джерелаIn work Cu2SnSe3 nanotetrapods using colloidal synthesis were obtained. By transmission electron microscopy, X-ray diffractometry, energy dispersive spectroscopy were studied morphological, structural properties and chemical composition of the obtained ternary chalcogenide zinc (Cu2SnSe3). The nanoparticles had the form of a core with symmetrically arranged 4 "hands". X-ray diffraction analysis showed the presence sphalerite and wurtzite phases in nanoparticles with the elemental composition Cu1,83Sn0,86Sn3
Chang, Shih-Chang, and 張世昌. "Synthesis of Cu2SnS3 and Cu2SnSe3 Absorbers for Thin-Film Solar Cell by Solvent-Thermal Refluxing Method and Annealing." Thesis, 2015. http://ndltd.ncl.edu.tw/handle/5dmc8c.
Повний текст джерела國立臺南大學
電機工程學系碩博士班
103
In this study, we investigated the ternary I–IV–VI compounds semiconductor layer synthesized by a simple and low-cost solvent-thermal refluxing method follow annealing. The thin films are suitable to be absorber layer of solar cells. At first, we fabricated the varied concentration of Cu-Sn-S precursor ink. After sulfurization, we obtained pure phase of CTS by sulfurizing the Cu-Sn-S precursor of the lower concentration. The CTS thin film is p-type with a carrier concentration of ∼5.23×1017 cm-3, and hole mobility of 14.2 cm2 V−1 s−1, which is suitable to be absorber layer of solar cells. We fabricated the Cu-Sn-Se precursor ink by different reaction time. At the longer reaction time, we obtained pure phase of CTSe. At the shorter reaction time, we obtained Cu2-xSe crystals and unformed Cu-Sn-Se groups. After selenization, the structures of Cu2SnSe3 were destructured and binary CuSe appeared. In contrast, after selenization, the precursors of short reaction time transform into pure Cu2SnSe3. The CTSe thin film is p-type with a carrier concentration of ∼1.9×1017 cm−3, and higher hole mobility of 13.66 cm2 V−1 s−1, which is suitable to be absorber layer of solar cells. In this study, we fabricated the ternary I–IV–VI compounds thin films by a simple and low-cost solvent-thermal refluxing method and and annealing.
Saragih, Albert Daniel, and Albert Daniel Saragih. "Investigation of Cu2SnSe3 and Mg-doped Cu2SnSe3 Thin Films for Photovoltaic Applications." Thesis, 2015. http://ndltd.ncl.edu.tw/handle/22800329344533239817.
Повний текст джерела國立臺灣科技大學
材料科學與工程系
103
Due to the energy crisis, we rush into the solar cell research and development. Fulfillment of energy is an issue that is always covered by each of the countries, coupled with the increasing rate of world population growth the energy consumption will continue to increase. Solar cell is one of the best choices, solar cells has been studied for more than fifty years but the last decade has seen the drastic growth in the research and development in the sector and because of that, now we have so many different types of solar cells design with megawatt production capabilities. Modern solar cells design can be fabricated using different materials and can have different structure. Cu2SnSe3 (CTSe) is a potential candidate for absorber materials of solar cells. In this study, we report the effects of doping Mg on the structural, electrical, and optical properties of these CTSe thin films for devolepment of highly efficient solar cells for long term energy production. Thin films of the CTSe and Mg-doped CTSe were sputtered with two different targets of Cu and Sn or Cu-Mg and Sn, respectively , followed by the selenization at 500-600 oC under the Se vapor. The films were characterized by FE-SEM, EDS, XRD, and Hall measurement and other analyses to explore the effects of Mg-doping with different ratios on CTSe thin film. All the thin films CTSe and Mg-doped CTSe were deposited by DC magnetron co-sputtering at room temperature with the powers of 26 W for Cu target and 16 W for Sn target for CTSe thin films and 26 W for Cu-Mg target and 16 W for Sn target for Mg-CTSe for 1hour. A two-step selenization process was executed at 300 oC and holding period of 30 min before reaching to three different selenization temeperatures of 500 oC, 550 oC, and 600 oC. The selenization procedure had been done in Se ambient arisen from SnSe2 pellet. Almost all thin films selenized at 550 oC-selenized films had the composition closed to expected stoichiometry of Cu2SnSe3. The major XRD diffraction peaks appeared at 2θ of 26.8°, 44.8°, 53.2°, 65.5°, and 72.3° which could be attributed to (111), (220), (311), (400), and (331) planes, respectively. All the diffraction peaks of CTSe could be assigned to the crystal planes from standard structure of Cu2SnSe3 (JCPDS No.89-2879). The optical band gaps obtained by extrapolating the linear region of the absorption spectra did not significantly change. The optical absorption studies indicated a direct band gap of 1.18 ~ 1.20 eV. Undoped CTSe and Mg-0.1-CTSe films selenized at 550 oC exhibited p-type conductivity and they were n-type for Mg-0.2-CTSe and Mg-0.3-CTSe. The Hall measurements for carrier concentration and Hall mobility were 2.54×1019 cm−3 and 681 cm2V−1s−1, respectively, for undoped CTSe film, 9.08 ’ 1018 cm-3 and 71 cm2V-1s-1 for Mg-0.1-CTSe, 1.18 ’ 1019cm−3 and 11 cm2V−1s−1 for Mg-0.2-CTSe, and 1.06 ’ 1019cm−3 and 43 cm2V−1s−1 for Mg-0.3-CTSe, after selenization at 550 oC.
Huang, Wei-di, and 黃瑋迪. "Preparation and characterization of sputtered Cu2SnSe3 thin films." Thesis, 2009. http://ndltd.ncl.edu.tw/handle/04908759369258486576.
Повний текст джерела國立臺灣科技大學
材料科技研究所
97
Recently, the research of solar cells is much more attractive and its technological progress is very fast. Although solar cells have reached a good conversion efficiency, high cost has limited their further applications. Lowering the cost with the finding of new materials is necessary. Although there are many CuInSe2 replacements, low-cost Cu2SnSe3 thin films with an energy band gap of 0.7-0.9 eV have not been seriously investigated for the absorption layer of the solar cells. In this study, the effects of the target composition, substrate temperature, annealing temperature, and the Se compensating discs on the sputtered Cu2SnSe3 thin films are discussed. The physical characteristics of the Cu2SnSe3 thin films were invstigated by XRD, FE-SEM, and EDS XRD. Hall measurement and Absorption spectroscopy were used for the electrical and optical properties, respectively. The experimental results shows that the sputtered Cu2SnSe3 thin films deposited at 400oC followed by annealing at 500oC have a better performance. At this condition, the films are p-type and have well crystallized with a large grain size of 1-3 �慆, a direct energy gap of 0.7-0.8 eV, an absorption coefficient of 104 cm-1 before and after annealing, a carrier concentration of 5×1019 cm-3, and the highest carrier mobility of 8~10 cm2V-1s-1.
Chang, Chia-Chi, and 張佳祺. "Electrical and thermal transport properties of Sb doped Cu2SnSe3." Thesis, 2017. http://ndltd.ncl.edu.tw/handle/8xq5pw.
Повний текст джерела國立東華大學
物理學系
105
The effect of Sb doping on the thermoelectric properties including electrical resistivity, thermal conductivity, and Seebeck oefficient of Cu2SnSe3 has been studied in the temperature range of 10 - 400 K. Besides, thermoelectric performance of the Cu2Sn1-xSbxSe3 (0 ≤ x ≤ 0.04) series with different preparation processes, i.e. conventional solid state route and spark plasma sintering (SPS), is compared. For samples prepared by conventional solid state route, electrical resistivity is found to decrease with increase in Sb content up to x = 0.02, then it increases with further increase in x. The Seebeck coefficient for all samples is positive, indicating that the dominant charge carries are holes. The thermal conductivity is found to decrease with increase in Sb concentration, presumably due to point-defect scattering as a result of Sb substitution. The electronic thermal conductivity κe is estimated to be about 1% of the total thermal conductivity, suggesting that the thermal conduction is mainly associated with lattice thermal conductivity κL. The highest value of figure of merit at 400 K is equal to 0.0137 for the sample Cu2Sn0.99Sb0.01Se3 which is about eight times greater than that of the pristine sample. It is observed that electrical resistivity for all the samples prepared by SPS technique is reduced considerably than the samples prepared by solid state reaction method, which is favorable in enhancing ZT because the electrical resistivity should be low for good thermoelectric materials. It is also noted that the Seebeck coefficient for samples prepared by SPS are significantly enhanced in comparison with the samples prepared by solid state reaction method. In particular, Seebeck coefficient of the x = 0.01 sample is about 295 μV/K at 400 K, which is about two times greater than that of the sample prepared by solid state reaction method. In addition, it is clearly seen that thermal conductivity values for samples prepared using SPS method are larger than that of samples prepared using solid state reaction method, demonstrating that SPS could produce denser samples with a better crystallinity. The maximum ZT value reaches 0.046 at 400 K for the Cu2Sn0.96Sb0.04Se3 sample, which is about 18 times greater than the sample prepared by solid state reaction method. In conclusion, it is found that the presently studied Cu2Sn1-xSbxSe3 (0 ≤ x ≤ 0.04) samples prepared by SPS exhibits a better thermoelectric performance than solid state route.
Hong, Yu Chen, and 洪郁宸. "Preparation and characterization of Cu2SnSe3 powders using solution growth technology." Thesis, 2016. http://ndltd.ncl.edu.tw/handle/nmqfjt.
Повний текст джерела長庚大學
化工與材料工程學系
104
In this study, the ternary Cu2SnSe3 semiconductor thin films were prepared using the thermal treatment of Cu2SnSe3 particles obtained from solution growth technology. The effects of Cu/Sn molar ratios in samples on the structural, electrical, and optical properties of the samples were investigated. The average particle size of the samples decreased with an increase in [Sn]/[Cu] molar ratio. X-ray diffraction pattern(XRD) and energy dispersive analysis of X-ray(EDAX) show that there were Se vacancies when the annealing temperature is higher than 450°C and the optimal annealing temperature is 410°C. The crystal phase of the films changed from cubic-Cu2Se to cubic-Cu2SnSe3 with an increase in [Sn]/[Cu] molar ratio. The direct energy band gaps of thin films varied from 0.98~1.10eV, respectively, depending on [Sn]/[Cu] molar ratio in samples. From the Hall measurement analysis, the carrier concentration decreased and the resistivity increased with an increase in [Sn]/[Cu] molar ratio in samples. Hall measurement showed the conduction type of samples (A) and (B) were p-type, but samples (C)~(E) were n-type. The flat band potentials of samples were in the range of -0.56~-0.13V(vs. Normal hydrogen electrode, NHE) in the 0.5M K2SO4 solution obtained using Mott-Schottky measurements. The Maximum photoelectrochemical performance of samples reached to 0.24 mA/cm2 at the external potential of +0.4 V(vs. Ag/AgCl) in the 0.5M K2SO4 solution.
Sousa, Afonso Pereira Correia de. "Investigation of detection limits of ZnSe and Cu2SnSe3 secondary phases in Cu2ZnSnSe4." Master's thesis, 2016. http://hdl.handle.net/10316/31589.
Повний текст джерелаQuaternary Cu2ZnSnSe4 (CZTSe) is a promising semiconductor material for absorber layer in thin lm solar cells due to direct band gap around 1eV and high absorption coe cient (> 104cm1) (7). The highest conversion e - ciency of CZTSe solar cells is above 11% (8). Nevertheless, a low open circuit voltage with respect to the band gap is a common phenomenon in CZTSe photovoltaic devices. A plausible reason for this is a reduction in the e ective band gap due to inhomogeneities in structure, phase, or composition. To gain a detailed knowledge of the in uence of phase inhomogeneities on the performance of solar cells, the understanding of detection limits of conventionally used characterization methods is essential. The aim of this work is to study the sensitivity limits of X-ray di raction and Raman spectroscopy to the presence of two very common secondary phases for Cu2ZnSnSe4{ZnSe and Cu2SnSe3. Polycrystalline powder of two CZTSe samples (slightly Zn-rich) and one Cu2SnSe3 sample have been grown using the solid state reaction method in evacuated silica tubes. Additionally, an industrially produced powder of ZnSe has been used to produce a number of mixtures of corresponding CZTSe with 1%, 2%, 3%, 5%, 10% and 20% of ZnSe or Cu2SnSe3 respectively. The structural characterization of the starting materials as well as of mixtures was carried out by powder X-ray di raction (PXRD) and subsequent Rietveld analysis of the di raction data using the FullProf suite (11). Rietveld re nement of di raction data of the mixtures was performed, paying a special attention to the in uence of amounts of ZnSe and Cu2SnSe3 on the di raction patterns of the mixtures. The amounts of secondary phases determined by Rietveld re nement have been compared with the initial data, determining in this way the detection limits of PXRD for these secondary phases. To study the crystal structure of the synthesized mixtures at the micrometer scale Raman spectroscopy has been employed. In these measurements a 632:8nm laser line was employed and it was found to be e cient for both ZnSe and Cu2SnSe3 phase detection. By performing Raman line scan measurements we evaluated characteristic Raman mode intensities corresponding to the di erent phases and thus are able to estimate the mixture composition.
Частини книг з теми "Cu2SnS3"
Mammadov, A. N., I. Dz Alverdiev, Z. S. Aliev, D. B. Tagiev, and M. B. Babanly. "Thermodynamic Modeling of the Phase Diagram for Cu2SnS3-Cu2SnSe3 System." In Advances in Intelligent Systems and Computing, 888–95. Cham: Springer International Publishing, 2019. http://dx.doi.org/10.1007/978-3-030-35249-3_118.
Повний текст джерелаLokhande, A. C., V. C. Karade, V. C. Lokhande, C. D. Lokhande, and Jin Hyeok Kim. "Chemical Processing of Cu2SnS3 Nanoparticles for Solar Cells." In Chemically Deposited Metal Chalcogenide-based Carbon Composites for Versatile Applications, 271–95. Cham: Springer International Publishing, 2023. http://dx.doi.org/10.1007/978-3-031-23401-9_10.
Повний текст джерелаAmiri, Iraj Sadegh, and Mahdi Ariannejad. "Copper Tin Sulfide (CU2SnS3) Solar Cell Structures and Implemented Methodology." In SpringerBriefs in Electrical and Computer Engineering, 37–47. Cham: Springer International Publishing, 2019. http://dx.doi.org/10.1007/978-3-030-17395-1_3.
Повний текст джерелаVillars, P., K. Cenzual, J. Daams, R. Gladyshevskii, O. Shcherban, V. Dubenskyy, V. Kuprysyuk, O. Pavlyuk, I. Savysyuk, and S. Stoyko. "Cu2SiS3." In Structure Types. Part 7: Space Groups (160) R3m - (156) P3m1, 697. Berlin, Heidelberg: Springer Berlin Heidelberg, 2009. http://dx.doi.org/10.1007/978-3-540-69949-1_283.
Повний текст джерелаRoy, Devsmita, Rajeshwari Garain, Arindam Basak, Subrat Behera, Ranjeeta Patel, and Udai P. Singh. "Impact of Performance Parameters on the Efficiency of Cu2SnS3 (CTS)/Si Tandem Solar Cell by SCAPS-1D." In Lecture Notes in Electrical Engineering, 63–75. Singapore: Springer Nature Singapore, 2023. http://dx.doi.org/10.1007/978-981-19-6605-7_5.
Повний текст джерелаChihara, H., and N. Nakamura. "NQRS Data for Cu2SnU (Subst. No. 2124)." In Substances Containing C10H16 … Zn, 996. Berlin, Heidelberg: Springer Berlin Heidelberg, 2010. http://dx.doi.org/10.1007/978-3-642-02943-1_859.
Повний текст джерелаRahaman, Sabina, Jagannatha K. B., Thyagaraj Tanjavur, and Lakshmisagar. "Investigating the Effect of Annealing on the Properties of Cu2SnS3 Thin Films Using Spin Coating." In Current Approaches in Science and Technology Research Vol. 14, 106–11. Book Publisher International (a part of SCIENCEDOMAIN International), 2021. http://dx.doi.org/10.9734/bpi/castr/v14/2562f.
Повний текст джерелаТези доповідей конференцій з теми "Cu2SnS3"
Kuku, Titilayo A., and Olaosebikan A. Fakolujo. "Photovoltaic Characteristics Of Thin Films Of Cu2SnS3." In 1986 International Symposium/Innsbruck, edited by Claes-Goeran Granqvist, Carl M. Lampert, John J. Mason, and Volker Wittwer. SPIE, 1986. http://dx.doi.org/10.1117/12.938349.
Повний текст джерелаde Wild, Jessica, Erika V. C. Robert, and Phillip J. Dale. "Chemical stability of the Cu2SnS3/Mo interface." In 2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC). IEEE, 2016. http://dx.doi.org/10.1109/pvsc.2016.7749626.
Повний текст джерелаLahlali, S., M. Belaqziz, H. Chehouani, L. Essaleh, K. Djessas, and K. Medjnoun. "Low temperature electrical conduction in thin film Cu2SnS3." In 2016 International Renewable and Sustainable Energy Conference (IRSEC). IEEE, 2016. http://dx.doi.org/10.1109/irsec.2016.7984081.
Повний текст джерелаPatel, Biren, Manmohansingh Waldiya, Ranjan K. Pati, Indrajit Mukhopadhyay, and Abhijit Ray. "Spray pyrolyzed Cu2SnS3 thin films for photovoltaic application." In 2ND INTERNATIONAL CONFERENCE ON CONDENSED MATTER AND APPLIED PHYSICS (ICC 2017). Author(s), 2018. http://dx.doi.org/10.1063/1.5033015.
Повний текст джерелаPatel, Biren, R. Narasimman, Ranjan K. Pati, Indrajit Mukhopadhyay, and Abhijit Ray. "Preparation and characterization of Cu2SnS3 thin films by electrodeposition." In INTERNATIONAL CONFERENCE ON NANOMATERIALS FOR ENERGY CONVERSION AND STORAGE APPLICATIONS: NECSA 2018. Author(s), 2018. http://dx.doi.org/10.1063/1.5035248.
Повний текст джерелаZakutayev, Andriy, Lauryn L. Baranowski, Adam W. Welch, Colin A. Wolden, and Eric S. Toberer. "Comparison of Cu2SnS3 and CuSbS2 as potential solar cell absorbers." In 2014 IEEE 40th Photovoltaic Specialists Conference (PVSC). IEEE, 2014. http://dx.doi.org/10.1109/pvsc.2014.6925421.
Повний текст джерелаTiwari, Devendra, T. K. Chaudhuri, T. Shripathi, and U. Deshpande. "Cu2SnS3 as a potential absorber for thin film solar cells." In SOLID STATE PHYSICS: Proceedings of the 56th DAE Solid State Physics Symposium 2011. AIP, 2012. http://dx.doi.org/10.1063/1.4710361.
Повний текст джерелаRaja, V. Sundara, U. Chalapathi, and S. Uthanna. "Growth and characterization of Cu2SnS3 thin films by spray pyrolysis." In INDIAN VACUUM SOCIETY SYMPOSIUM ON THIN FILMS: SCIENCE AND TECHNOLOGY. AIP, 2012. http://dx.doi.org/10.1063/1.4732382.
Повний текст джерелаRobert, Erika V. C., Jessica de Wild, and Phillip J. Dale. "Cu2SnS3-based thin film solar cell from electrodeposition-annealing route." In 2015 IEEE 42nd Photovoltaic Specialists Conference (PVSC). IEEE, 2015. http://dx.doi.org/10.1109/pvsc.2015.7356086.
Повний текст джерелаAcebo, Laura, Ignacio Becerril-Romero, Dioulde Sylla, Yudania Sanchez, Florian Oliva, Victor Izquierdo-Roca, Paul Pistor, and Edgardo Saucedo. "Development of Cu2SnS3 based solar cells by a sequential process." In 2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC). IEEE, 2016. http://dx.doi.org/10.1109/pvsc.2016.7749619.
Повний текст джерела