Статті в журналах: "Cu2O Films"

1

Nordseth, Ørnulf, Raj Kumar, Kristin Bergum, Irinela Chilibon, Sean Erik Foss, and Edouard Monakhov. "Nitrogen-Doped Cu2O Thin Films for Photovoltaic Applications." Materials 12, no. 18 (September 19, 2019): 3038. http://dx.doi.org/10.3390/ma12183038.

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Cuprous oxide (Cu2O) is a p-type semiconductor with high optical absorption and a direct bandgap of about 2.1 eV, making it an attractive material for photovoltaic applications. For a high-performance photovoltaic device, the formation of low-resistivity contacts on Cu2O thin films is a prerequisite, which can be achieved by, for instance, nitrogen doping of Cu2O in order to increase the carrier concentration. In this work, nitrogen-doped p-type Cu2O thin films were prepared on quartz substrates by magnetron sputter deposition. By adding N2 gas during the deposition process, a nitrogen concentration of up to 2.3 × 1021 atoms/cm3 in the Cu2O thin films was achieved, as determined from secondary ion mass spectroscopy measurements. The effect of nitrogen doping on the structural, optical, and electrical properties of the Cu2O thin films was investigated. X-ray diffraction measurements suggest a preservation of the Cu2O phase for the nitrogen doped thin films, whereas spectrophotometric measurements show that the optical properties were not significantly altered by incorporation of nitrogen into the Cu2O matrix. A significant conductivity enhancement was achieved for the nitrogen-doped Cu2O thin films, based on Hall effect measurements, i.e., the hole concentration was increased from 4 × 1015 to 3 × 1019 cm−3 and the resistivity was reduced from 190 to 1.9 Ω⋅cm by adding nitrogen to the Cu2O thin films.

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2

Oshima, Takumi, Masaya Nohara, Takuya Hoshina, Hiroaki Takeda, and Takaaki Tsurumi. "Characterization of Cu₂O Thin Film Grown by Molecular Beam Epitaxy." Key Engineering Materials 582 (September 2013): 157–60. http://dx.doi.org/10.4028/www.scientific.net/kem.582.157.

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We report the growth of Cu2O thin films on glass and MgO(100) substrates by molecular beam epitaxy. Crystal orientation of Cu2O thin films on glass substrate were changed from (100) to (111) with increasing the deposition rate. The Cu2O thin films were epitaxially grown on MgO(100) substrate with an orientation relationship of Cu2O(110) // MgO(100). The film quality and electrical properties of Cu2O thin films were changed with deposition rate. The slow deposition rate resulted in high conductivity and mobility, as well as good crystallinity and orientation.

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3

Nordseth, Ørnulf, Irinela Chilibon, Bengt Gunnar Svensson, Raj Kumar, Sean Erik Foss, Cristina Vasiliu, Laurentiu Baschir, et al. "Characterization of Cuprous Oxide Thin Films for Application in Solar Cells." Diffusion Foundations 22 (May 2019): 65–73. http://dx.doi.org/10.4028/www.scientific.net/df.22.65.

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Cuprous oxide (Cu2O) has a high optical absorption coefficient and favourable electrical properties, which make Cu2O thin films attractive for photovoltaic applications. Using reactive radio-frequency magnetron sputtering, high quality Cu2O thin films with good carrier transport properties were prepared. This paper presents the characteristics of Cu2O thin films that were sputter deposited on quartz substrates and subjected to post-deposition rapid thermal annealing. The thickness of the thin films and the optical constants were determined by ellipsometry spectroscopy (SE). The optical transmittance increased in lower wavelength region after annealing at 900 ̊C in rapid thermal annealing (RTA). The structural and morphological properties of the Cu2O thin films were investigated by electronic scanning microscopy (SEM) and atomic force microscopy (AFM), whereas elemental analysis was performed by X-ray fluorescence spectroscopy (XRF). The carrier mobility, carrier density and film resistivity were changed after post-deposition rapid thermal annealing from respectively ~14 cm2/Vs, ~2.3 x 1015 cm-3 and ~193 Ωcm for the as-deposited Cu2O film to ~49 cm2/Vs, ~5.0 x 1014 cm-3 and ~218 Ωcm for the annealed Cu2O film. The investigation suggests that the sputter-deposited Cu2O thin films have good potential for application as absorber layers in solar cells.

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4

Chen, Lung-Chien, Chung-Chieh Wang, and Suz-Wei Lu. "Annealing Effects of Sputtered Cu2O Nanocolumns on ZnO-Coated Glass Substrate for Solar Cell Applications." Journal of Nanomaterials 2013 (2013): 1–6. http://dx.doi.org/10.1155/2013/891365.

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Cuprous oxide (Cu2O) films were prepared on an indium tin oxide glass substrate by radiofrequency magnetron sputtering using a high-purity Cu target. The temperature of annealing was varied to obtain Cu2O thin films with various elements, compositions, and surface structures. The p-Cu2O thin films thus formed were characterized by FESEM and XRD. After annealing at 500∘C, the bilayer structure which consisted of Cu nanoclusters on the surface of a film of Cu2O nanocolumns was observed. The Cu2O solar cell with the bilayered structure exhibited poor power conversion efficiency.

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5

El-Shaer, A., and A. R. Abdelwahed. "Potentiostatic Deposition and Characterization of Cuprous Oxide Thin Films." ISRN Nanotechnology 2013 (April 17, 2013): 1–4. http://dx.doi.org/10.1155/2013/271545.

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Electrodeposition technique was employed to deposit cuprous oxide Cu2O thin films. In this work, Cu2O thin films have been grown on fluorine doped tin oxide (FTO) transparent conducting glass as a substrate by potentiostatic deposition of cupric acetate. The effect of deposition time on the morphologies, crystalline, and optical quality of Cu2O thin films was investigated.

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6

Sundaresh, Sreeram, Akash Hari Bharath, and Kalpathy B. Sundaram. "Effect of Cu2O Sputtering Power Variation on the Characteristics of Radio Frequency Sputtered p-Type Delafossite CuCrO2 Thin Films." Coatings 13, no. 2 (February 9, 2023): 395. http://dx.doi.org/10.3390/coatings13020395.

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For the first time, the effect of Cuprous Oxide (Cu2O) sputtering power variation on the radio frequency sputtered Copper Chromium Oxide (CuCrO2) thin films was studied. In this work, the sputtering power of Cr2O3 was held constant at 200 W while the sputtering power of the Cu2O target was varied from 10 to 100 W. The films were subsequently annealed at 650 °C in N2 ambiance. The effects of Cu2O sputtering power variation on the structural, optical, and electrical properties of the films have been reported in this work. X-ray diffractometer (XRD) study revealed that the single-phase delafossite structure of CuCrO2 was only obtained at Cu2O sputtering power of 50 W. X-ray photoelectron spectroscopy (XPS) analysis further established the results of XRD study where Cu in 1+ oxidation state was identified in thin films obtained at 50 W of Cu2O sputtering power. The optical studies were conducted in this work on all the post-deposition annealed films in the wavelength range of 200–800 nm. The energy dispersive x-ray spectroscopy (EDS) study revealed a near stoichiometric composition ratio of 1:1.06 of Cu:Cr at% obtained in the films sputtered with 50 W of Cu2O sputtering power. The highest optical transmission of ~81% and the highest optical bandgap of 3.21 eV were observed for single-phase CuCrO2 thin films. The optical transmission and the optical bandgap were found to decrease with an increase in the Cu2O sputtering power. The electrical study performed on all the post-deposition annealed films revealed that the lowest resistivity of 0.652 Ω-cm was identified for single-phase CuCrO2 thin films obtained at 50 W of Cu2O sputtering power.

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7

LAI, GUOZHONG, HUIQING LAN, SUANZHI LIN, YAN QU, and FACHUN LAI. "OPTICAL PROPERTIES OF THE OXIDATION OF Cu THIN FILMS PREPARED BY THERMAL EVAPORATION." Surface Review and Letters 20, no. 01 (February 2013): 1350011. http://dx.doi.org/10.1142/s0218625x1350011x.

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Copper films with 87 nm thickness were deposited on quartz substrates by thermal evaporation. In order to investigate the oxidation process, the Cu films were oxidized at different temperatures in air with different durations to obtain the complete and uncompleted copper oxide films. The structure and optical properties of the samples were studied by X-ray diffraction, scanning electron microscopy and spectrophotometer, respectively. It is found that the sample oxidized at 220°C for 200 min is Cu2O film with 106 nm thickness. Both the transmittance and reflectance of the samples increase with the increase of oxidation duration. The optical constants of the Cu film and the Cu2O film were retrieved by simulating the reflectance or transmittance based on the optical dielectric models. The optical constants of the Cu and Cu2O mixed layer with different composition were calculated by the effective medium theories. Adjusting the mixed layers composition and thickness, and Cu2O layer thickness, the transmittance and reflectance of the uncompleted oxidation films were simulated by optical multilayer design software. The results show that the uncompleted oxidation films consist of the Cu and Cu2O mixed layers and Cu2O layer. According to the parabolic rate law, the increase rate of Cu2O layer thickness for the uncompleted oxide films at 200°C is 1.6 nm s-1/2.

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8

Trinkler, Laima, Dajin Dai, Liuwen Chang, Mitch Ming-Chi Chou, Tzu-Ying Wu, Jevgenijs Gabrusenoks, Dace Nilova, Rihards Ruska, Baiba Berzina, and Ramunas Nedzinskas. "Luminescence Properties of Epitaxial Cu2O Thin Films Electrodeposited on Metallic Substrates and Cu2O Single Crystals." Materials 16, no. 12 (June 13, 2023): 4349. http://dx.doi.org/10.3390/ma16124349.

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The luminescent properties of epitaxial Cu2O thin films were studied in 10–300 K temperature range and compared with the luminescent properties of Cu2O single crystals. Cu2O thin films were deposited epitaxially via the electrodeposition method on either Cu or Ag substrates at different processing parameters, which determined the epitaxial orientation relationships. Cu2O (100) and (111) single crystal samples were cut from a crystal rod grown using the floating zone method. Luminescence spectra of thin films contain the same emission bands as single crystals around 720, 810 and 910 nm, characterizing VO2+, VO+ and VCu defects, correspondingly. Additional emission bands, whose origin is under discussion, are observed around 650–680 nm, while the exciton features are negligibly small. The relative mutual contribution of the emission bands varies depending on the thin film sample. The existence of the domains of crystallites with different orientations determines the polarization of luminescence. The PL of both Cu2O thin films and single crystals is characterized by negative thermal quenching in the low-temperature region; the reason of this phenomenon is discussed.

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9

Markworth, Paul R., R. P. H. Chang, Y. Sun, G. K. Wong, and J. B. Ketterson. "Epitaxial stabilization of orthorhombic cuprous oxide films on MgO(110)." Journal of Materials Research 16, no. 4 (April 2001): 914–21. http://dx.doi.org/10.1557/jmr.2001.0130.

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Continuous epitaxial films of cuprous oxide (Cu2O) have been formed by the thermal oxidation of 1.5-μm-thick Cu metal films deposited on MgO(110) substrates. These films melted at 1118 °C in air, in agreement with equilibrium phase diagrams. Upon cooling from the liquid, a highly crystalline, epitaxial, 2.5-μm-thick Cu2O film was formed. X-ray diffraction spectroscopy revealed that the Cu2O film crystal structure was orthorhombically distorted from the bulk cubic crystal structure. High-resolution transmission electron microscopy showed that the film is coherent, and energy dispersive x-ray spectroscopy showed that interdiffusion is limited to the interface. These results suggest that a new epitaxially stabilized phase of Cu2O has been formed.

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10

Miller, Dean J., Jeffrey D. Hettinger, Ronald P. Chiarello, and Hyung K. Kim. "Epitaxial growth of Cu2O films on MgO by sputtering." Journal of Materials Research 7, no. 10 (October 1992): 2828–32. http://dx.doi.org/10.1557/jmr.1992.2828.

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The epitaxial growth of Cu2O films is of significant interest for the unique potential they offer in the development of multilayer devices and superlattices. While fundamental studies may be carried out on epitaxial films prepared by any technique, the growth of artificially layered superlattices requires that films grow epitaxially during deposition. The present study examined the growth of Cu2O on MgO substrates directly during deposition by sputtering. Although epitaxial thin films of Cu2O could be produced, a mosaic structure was observed. The structure of the film may be related to the growth mechanism in which islands coalesce to form a continuous film.

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11

Zhu, Hai Ling, Jun Ying Zhang, Xiang Lan, Chun Zhi Li, Tian Min Wang, and Bai Biao Huang. "Photo-Catalytic Activity of Cu₂O Films with Various Crystal Structures Prepared by DC Reactive Magnetron Sputtering." Materials Science Forum 610-613 (January 2009): 293–98. http://dx.doi.org/10.4028/www.scientific.net/msf.610-613.293.

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The direct current (DC) reactive magnetron sputtering of a metal copper target in oxygen-argon mixed atmospheres to produce thin films of crystalline copper oxides was described. The sputtering pressure, sputtering power and oxygen flow rate were established in order to control the structures and properties of Cu2O films. The as-deposited Cu2O films with various crystal structures have high visible absorption and photo-catalytic activity under visible light irradiation. The photo-catalytic properties of Cu2O films are affected by not only the crystal structure but also the surface morphology.

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12

Tseng, C. C., J. H. Hsieh, and W. Wu. "Microstructural analysis and optoelectrical properties of Cu2O, Cu2O–Ag, and Cu2O/Ag2O multilayered nanocomposite thin films." Thin Solid Films 519, no. 15 (May 2011): 5169–73. http://dx.doi.org/10.1016/j.tsf.2011.01.081.

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13

Yu, Xiao Jiao, A. Man Zhang, Jian Zhang, Jie Zhao, Bing Hua Yao, and Guang Jun Liu. "Preparation and Characterization of Cu₂O Thin Films by Electrodeposition." Advanced Materials Research 413 (December 2011): 371–74. http://dx.doi.org/10.4028/www.scientific.net/amr.413.371.

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Cu2O thin films is preparated through electrodeposition with conductive glass of coating indium tin oxide as work electrode.The effects of various factor upon Cu2O film morphology are investigated.The best conditions of electrodeposition Cu2O film are discussed.The deposition potential is determined by Linear sweep voltammetry.The results indicate that when pH is 5.50~ 6.00, the concentrations of Cu (CH3COO)2 is 0.015 ~ 0.04 mol/L,and the deposition potential is-0.075 ~ 0.225 V (vs SCE),Cu2O thin films morphology is dendritic crystal.

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14

Fortin, E., and E. Tsélépis. "Exciton diffusion in thin Cu2O films." Thin Solid Films 164 (October 1988): 289–93. http://dx.doi.org/10.1016/0040-6090(88)90151-4.

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15

Ristov, M., Gj Sinadinovski, and I. Grozdanov. "Chemical deposition of Cu2O thin films." Thin Solid Films 123, no. 1 (January 1985): 63–67. http://dx.doi.org/10.1016/0040-6090(85)90041-0.

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16

Wu, Lingling, Lok-kun Tsui, Nathan Swami, and Giovanni Zangari. "Photoelectrochemical Stability of Electrodeposited Cu2O Films." Journal of Physical Chemistry C 114, no. 26 (June 15, 2010): 11551–56. http://dx.doi.org/10.1021/jp103437y.

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17

Montero, José, and Lars Österlund. "Photodegradation of Stearic Acid Adsorbed on Copper Oxide Heterojunction Thin Films Prepared by Magnetron Sputtering." ChemEngineering 2, no. 3 (August 28, 2018): 40. http://dx.doi.org/10.3390/chemengineering2030040.

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Nanocrystalline copper oxide thin films were fabricated by reactive DC magnetron sputtering. The structure and optical properties of the films were measured with X-ray diffraction, scanning electron microscopy, and spectrophotometry. Variations of oxygen partial pressure resulted in oxide composition ranging from Cu, Cu-Cu2O, Cu2O-CuO1−x, and CuO. Optical band transitions at 2.06 eV and 2.55 eV were found for Cu2O corresponding to the direct forbidden and direct allowed interband transitions. For CuO an indirect allowed interband transition was found at 1.28 eV. The photocatalytic activity was determined by quantifying the rate constant and quantum yield (destroyed molecules/photons absorbed) under stearic acid degradation. Photocatalytic activity was found to be highest in mixed-phase films with Cu-Cu2O films the highest. Results from post-annealed Cu-Cu2O and CuO films show similar results. We interpret our results as being due to efficient electron-hole charge separation in the heterojunction films. The obtained quantum yields were generally about ten times lower than for comparable dense TiO2 and WO3 binary oxides, which calls for further studies of the spectral dependence of the quantum yield and electron-hole pair life times for oxides with different purity levels.

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18

Budi, S., D. I. Syafei, Yusmaniar, Q. F. Khasanah, and D. Laxmianti. "Electrodeposition of CU₂O Films at Room Temperature for Methylene Blue Photodegradation." Journal of Physics: Conference Series 2377, no. 1 (November 1, 2022): 012004. http://dx.doi.org/10.1088/1742-6596/2377/1/012004.

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The Cu2O films were synthesized using the electrodeposition technique at room temperature. To investigate the phase, electrochemical properties, and photocatalytic activity of the Cu2O films, the duration of electrodeposition was varied. The catalytic activity of methylene blue (MB) photodegradation was studied. The X-ray diffraction measurement showed that single-phase Cu2O was successfully formed from the prepared films. Electrochemical properties analysis under visible light irradiation showed that a high photocurrent recorded by the linear sweep voltammetry technique was obtained from Cu2O synthesized with deposition time of 60 minutes. This result could be associated with the lowest resistance charge transfer of the sample compared to other deposition times measured using the electrochemical impedance spectroscopy method. The catalytic activity showed that this Cu2O is the most effective photocatalyst, as it provides a 51.5% degradation of MB dye.

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19

Kim, Jun-A., Jung-Hwan Park, Sang-Geon Park, Chang-Sik Son, Young-Guk Son, and Dong-Hyun Hwang. "Effect of Substrate Temperature on Variations in the Structural and Optical Properties of Cu2O Thin Films Deposited via RF Magnetron Sputtering." Crystals 13, no. 4 (April 9, 2023): 643. http://dx.doi.org/10.3390/cryst13040643.

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In the present study, Cu2O films were deposited on a glass substrate via RF (radio frequency) magnetron sputtering under substrate temperature conditions that ranged from room temperature (RT, 25 °C) to 400 °C. The structural, compositional, and optical properties of the Cu2O films were analyzed in relation to the experimental variables by applying various measurement methods. The substrate temperature was a crucial factor in shaping the structural, compositional, and optical properties of the Cu2O films that were synthesized via RF-magnetron sputtering. Our findings revealed that the Cu2O films exhibited a cubic structure, which was confirmed by XRD analysis. Specifically, the (111) and (200) planes showed different trends with respect to the substrate temperature. The intensity of the (111) peak increased at 250 °C, and above 300 °C, the preferred orientation of the (111) plane was maintained. The grain size, which was determined via FE-SEM, displayed a positive correlation with the substrate temperature. Additionally, XPS analysis revealed that the binding energy (BE) of the Cu2O film sputtered at 400 °C was similar to that which was previously reported. Notably, the as-grown Cu2O film demonstrated the highest transmittance (15.9%) in the visible region, which decreased with increasing substrate temperature. Furthermore, the energy band gap (Eg) of the Cu2O films remained constant (2.51 eV) at low substrate temperatures (25 °C to 200 °C) but exhibited a slight increase at higher temperatures, reaching 2.57 eV at 400 °C.

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20

LAI, GUOZHONG, YANGWEI WU, LIMEI LIN, YAN QU, and FACHUN LAI. "OPTICAL PROPERTIES OF N-DOPED Cu2O THIN FILMS DEPOSITED BY RF-MAGNETRON SPUTTERING Cu2O TARGET." Surface Review and Letters 21, no. 04 (August 2014): 1450052. http://dx.doi.org/10.1142/s0218625x14500528.

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N -doped Cu 2 O films were deposited on quartz substrates by reactive magnetron sputtering a Cu 2 O target. The optical constants and thicknesses of the films with different nitrogen partial pressure (NPP) were retrieved from transmittance data by an optical model which combines the Forouhi–Bloomer model with modified Drude model. The results show that when NPP increases from 0.0 to 0.033 Pa, the optical gap decreases from 2.14 to 1.95 eV. Additionally, an optical absorption process in the infrared region below the optical band gap was observed for N -doped Cu 2 O films, which was not found in the pure Cu 2 O film. This is because an intermediate band (IB) in the band gap results from nitrogen doping. It is believed that N -doped Cu 2 O film with suitable NPP could be used to enhance the energy conversion efficiency for photovoltaic cells.

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21

Wu, W., C. C. Tseng, C. Li, C. K. Chang, and J. H. Hsieh. "Characterization of Cu2O and Cu2O–Ag2O thin films synthesized by plasma oxidation." Vacuum 118 (August 2015): 147–51. http://dx.doi.org/10.1016/j.vacuum.2015.02.010.

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22

Yeh, Chung Wei, and Kee Rong Wu. "Photoelectrocatalytic Activity of Cu₂O Films Prepared on Different Substrates in Connection with TiO₂ Electrodes." Advanced Materials Research 774-776 (September 2013): 987–91. http://dx.doi.org/10.4028/www.scientific.net/amr.774-776.987.

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In this study, we investigate Cu2O film electrically connected with TiO2 film, as a p-n type heterojunction, for enhancing the photoelectrocatalytic (PEC) activity towards degradation of methyl orange (MO) solution under ultraviolet irradiation. By using a versatile magnetron sputtering technique, the Cu2O films were deposited onto three different substrates, i.e., ITO, Ni/Cr and Pt, denoted as Cu2O/It, Cu2O/Ni and Cu2O/Pt, respectively, whereas the TiO2 film was deposited on ITO substrate. All three Cu2O films show about the same characteristics of preferential (111) plane of the Cu2O oxide. While electrically coupled with TiO2, the Cu2O/Pt exhibits the highest PEC activity on MO degradation among four different couples. Thus, the increase in PEC activity of the Cu2O/Pt-TiO2 is due to both the electron affinity of the Pt substrate and the effect of the equilibration of Fermi level of which is more compatible for Cu2O and TiO2 oxides, decreasing the electrochemical capacitances of the p-n heterojunction. The electric-assisted heterojunction offers an efficient way for photogenerated electron transport from TiO2 to holes in the Cu2O, rendering enhanced PEC activity.

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23

Gondolini, Angela, Nicola Sangiorgi, Alex Sangiorgi, and Alessandra Sanson. "Photoelectrochemical Hydrogen Production by Screen-Printed Copper Oxide Electrodes." Energies 14, no. 10 (May 19, 2021): 2942. http://dx.doi.org/10.3390/en14102942.

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In this work, copper oxides-based photocathodes for photoelectrochemical cells (PEC) were produced for the first time by screen printing. A total 7 × 10−3 g/m2 glycerine trioleate was found as optimum deflocculant amount to assure stable and homogeneous inks, based on CuO nano-powder. The inks were formulated considering different binder amounts and deposited producing films with homogenous thickness, microstructure, and roughness. The as-produced films were thermally treated to obtain Cu2O- and Cu2O/CuO-based electrodes. The increased porosity obtained by adding higher amounts of binder in the ink positively affected the electron transfer from the surface of the electrode to the electrolyte, thus increasing the corresponding photocurrent values. Moreover, the Cu2O/CuO system showed a higher charge carrier and photocurrent density than the Cu2O-based one. The mixed Cu2O/CuO films allowed the most significant hydrogen production, especially in slightly acid reaction conditions.

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24

Chang, Chih-Jui, Chih-Wei Lai, Wei-Cheng Jiang, Yi-Syuan Li, Changsik Choi, Hsin-Chieh Yu, Shean-Jen Chen, and YongMan Choi. "Fabrication and Characterization of P-Type Semiconducting Copper Oxide-Based Thin-Film Photoelectrodes for Solar Water Splitting." Coatings 12, no. 8 (August 17, 2022): 1206. http://dx.doi.org/10.3390/coatings12081206.

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Solar light-driven hydrogen by photocatalytic water splitting over a semiconductor photoelectrode has been considered a promising green energy carrier. P-type semiconducting copper oxides (Cu2O and CuO) have attracted remarkable attention as an efficient photocathode for photoelectrochemical (PEC) water splitting because of their high solar absorptivity and optical band gaps. In this study, CuO thin films were prepared using the sol-gel spin coating method to investigate the effects of aging time and layer dependency. Electrodeposition was also applied to fabricate Cu2O thin films. Cu2O thin films annealed at 300 °C are a hetero-phase system composed of Cu2O and CuO, while those at 400 °C are fully oxidized to CuO. Thin films are characterized using atomic force microscopy (AFM), scanning electron microscopy (SEM), ultraviolet-visible spectroscopy (UV-VIS), Fourier transform infrared spectroscopy (FTIR), spectroscopic ellipsometry (SE), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and Raman microscopy. The hetero-phase thin films increase the photoconversion efficiency compared to Cu2O. Fully oxidized thin films annealed at 400 °C exhibit a higher efficiency than the hetero-phase thin film. We also verified that CuO thin films fabricated using electrodeposition show slightly higher efficiency than the spin coating method. The highest photocurrent of 1.1 mA/cm2 at 0.10 V versus RHE was measured for the fully oxidized CuO thin film under one-sun AM1.5G illumination. This study demonstrates a practical method to fabricate durable thin films with efficient optical and photocatalytic properties.

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25

Wang, Yao, Jianqing Feng, Lihua Jin, and Chengshan Li. "Photocatalytic reduction of graphene oxide with cuprous oxide film under UV-vis irradiation." REVIEWS ON ADVANCED MATERIALS SCIENCE 59, no. 1 (June 27, 2020): 207–14. http://dx.doi.org/10.1515/rams-2020-0022.

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AbstractWe have grown Cu2O films by different routes including self-oxidation and metal-organic deposition (MOD). The reduction efficiency of Cu2O films on graphene oxide (GO) synthesized by modified Hummer’s method has been studied. Surface morphology and chemical state of as-prepared Cu2O film and GO sheets reduced at different conditions have also been investigated using atomic force microscopy (AFM) and x-ray photoelectron spectroscopy (XPS). Results show that self-oxidation Cu2O film is more effective on phtocatalytic reduction of GO than MOD-Cu2O film. Moreover, reduction effect of self-oxidation Cu2O film to GO is comparable to that of environmental-friendly reducing agent of vitamin C. The present results offer a potentially eco-friendly and low-cost approach for the manufacture of reduced graphene oxide (RGO) by photocatalytic reduction.

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26

Ooi, Poh Kok, Chin Guan Ching, Sha Shiong Ng, Mat Johar Abdullah, Abu Hassan Haslan, and Hassan Zainuriah. "Characteristics of Cuprous Oxide Thin Films Deposited on Glass and Polyethylene Terephthalate Substrates." Advanced Materials Research 895 (February 2014): 29–34. http://dx.doi.org/10.4028/www.scientific.net/amr.895.29.

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In this work, cuprous oxide (Cu2O) thin films grown on glass and polyethylene terephthalate (PET) substrates using reactive radio frequency magnetron sputtering system were investigated. Copper target with purity of 99.99% were used while high purity argon-oxygen gases were utilized as sputtering gases. Structural, morphological, and optical properties of the films were investigated by X-ray diffraction (XRD), atomic force microscopy and ultra-violet visible spectrophotometer. From the XRD results, only one single diffraction peak corresponding to cubic Cu2O (111) crystal structure were observed for both substrates. The surface morphologies of the samples were in a form of pillar-like. Root mean square surface roughness for Cu2O on glass and PET substrates were 3.37 nm and 3.20 nm, respectively. The films were highly transparent for wavelength above 600 nm. The Cu2O films have direct band gap values of around 2.56 eV as determined by Taucs method.

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Bartholazzi, Gabriel, M. M. Shehata, Daniel H. Macdonald, and Lachlan E. Black. "Atomic layer deposition of Cu₂O using copper acetylacetonate." Journal of Vacuum Science & Technology A 41, no. 2 (March 2023): 022402. http://dx.doi.org/10.1116/6.0002238.

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Cu2O is an important p-type semiconductor material with applications in thin-film transistors, photovoltaics, and water splitting. For such applications, pinhole-free and uniform thin films are desirable, thus making atomic layer deposition (ALD) the ideal fabrication technique. However, existing ALD Cu precursors suffer from various problems, including limited thermal stability, fluorination, or narrow temperature windows. Additionally, some processes result in CuO films instead of Cu2O. Therefore, it is important to explore alternative precursors and processes for ALD of Cu2O thin films. In this work, we report the successful deposition of Cu2O using copper acetylacetonate as a precursor and a combination of water and oxygen as reactants at 200 °C. Saturation of the deposition rate with precursor and reactant dose time was observed, indicating self-limiting behavior, with a saturated growth-per-cycle of 0.07 Å. The Cu2O film was polycrystalline and uniform (RMS roughness ∼2 nm), with a direct forbidden bandgap of 2.07 eV and a direct allowed bandgap of 2.60 eV.

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Halin, Dewi Suriyani Che, Haroon Haiza, Ibrahim Abu Talib, Abdul Razak Daud, and Muhammad Azmi Abd Hamid. "Microstructures Study on Cuprous Oxide Thin Films Deposited on Different Substrates by Using Sol-Gel Technique." Advanced Materials Research 626 (December 2012): 849–52. http://dx.doi.org/10.4028/www.scientific.net/amr.626.849.

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Cuprous oxide (Cu2O) thin films were formed onto three different substrates such as indium tin oxide (ITO) coated glass, titanium oxide (TiO2) and n-Si substrates by sol-gel spin coating technique. It was found that the formation mechanism of Cu2O films onto different substrates lead to different microstructures. The films were characterized by field-emission scanning electron microscopy (FESEM). Based on the FESEM micrographs the grain shape of film prepared were different on ITO, TiO2 and n-Si substrate with 114 nm, 154 nm and 84 nm respectively. The results indicate that the choice of substrate strongly affect the film morphology, structural and optical properties. Keywords: Cu2O, thin films, ITO, sol-gel, microstructures

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29

Khan, I. A., S. A. Hussain, A. S. Nadeem, M. Saleem, A. Hassnain, and R. Ahmad. "Role of Oxygen Pressure on the Surface Properties of Polycrystalline Cu2O Films Deposited By Thermal Evaporator." Materials Physics and Chemistry 1, no. 3 (May 22, 2019): 14. http://dx.doi.org/10.18282/mpc.v1i3.584.

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<p>Polycrystalline cuprous oxide (P-Cu2O) films are deposited on Cu substrates for various (0.2, 0.3 and 0.4 mbar) oxygen pressures (OP) by thermal evaporator. The XRD pattern shows the development of Cu (200), Cu2O (200) and Cu2O (311) diffraction planes which confirms the deposition of P-Cu2O films. The intensity of Cu2O (200) and Cu2O (311) planes is associated with the increase of OP. The crystallite size and microstrains developed in (200) and (311) planes are found to be 19.31, 21.18, 11.32 nm; 22.04, 23.11, 12.08 nm and 0.113, 0.103, 0.193; 0.099, 0.096, 0.181 with increasing OP respectively. The d-spacing and lattice constant are found to be 0.210, 0.128 nm and 0.421, 0.425 nm respectively. The bond length of P-Cu2O film is found to be 0.255 nm. The crystallites/unit area of these planes is found to be 12.21, 7.46, 45.16 nm-2 and 8.21, 5.75, 37.16 nm-2 respectively. The texture coefficients of these planes are found to be 1.22, 1.26, 1.11 and 0.78, 0.74 and 0.56 with increasing OP respectively. The O and Cu contents are found to be 5.31, 5.92, 6.94 wt % and 83.01, 82.44, 80.65 wt % respectively. The thickness and growth rate of P-Cu2O films are found to be 87.9, 71.9, 65.5 nm and 17.6, 14.2, 13.1 (nm/min) with increasing OP respectively. The SEM micro-structures reveal the formations of patches of irregular shapes, rounded nano-particles, clouds of nano-particles and their distribution depend on the increasing OP. The refractive index and energy band gap of P-Cu2O films are found to be 1.96, 1.89, 1.92 and 2.47, 2.44 and 2.25 eV with increasing OP respectively.<br /><br /></p>

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30

Markworth, P. R., X. Liu, J. Y. Dai, W. Fan, T. J. Marks, and R. P. H. Chang. "Coherent island formation of Cu2O films grown by chemical vapor deposition on MgO(110)." Journal of Materials Research 16, no. 8 (August 2001): 2408–14. http://dx.doi.org/10.1557/jmr.2001.0330.

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Cuprous oxide (Cu2O) films have been grown on single-crystal MgO(110) substrates by a chemical vapor deposition process in the temperature range 690–790 °C. X-ray diffraction measurements show that phase-pure, highly oriented Cu2O films form at these temperatures. The Cu2O films are observed to grow by an island-formation mechanism on this substrate. Films grown at 690 °C uniformly coat the substrate except for micropores between grains. However, at a growth temperature of 790 °C, an isolated, three-dimensional island morphology develops. Using a transmission electron microscopy and atomic force microscope, both dome- and hut-shaped islands are observed and are shown to be coherent and epitaxial. The isolated, coherent islands form under high mobility growth conditions where geometric strain relaxation occurs before misfit dislocation can be introduced. This rare observation for oxides is attributed to the relatively weak bonding of Cu2O, which also has a relatively low melting temperature.

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31

Huang, Xinwen, and Zongjian Liu. "Heterogeneous Deposition of Cu2O Nanoparticles on TiO2Nanotube Array Films in Organic Solvent." Journal of Nanomaterials 2013 (2013): 1–8. http://dx.doi.org/10.1155/2013/517648.

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A novel method for decoration of anodic TiO2nanotube array films (NAFs) with Cu2O nanoparticles has been reported. The method is based on the reduction of Cu(II) in a mixture of ethylene glycol and N,N-dimethylformamide at 120°C for 16 h, where the resulting Cu2O can heterogeneously nucleate and grow on TiO2NAFs. The nanosized Cu2O is found to be well dispersed on the wall of TiO2nanotubes without blocking the nanotube, a commonly observed phenomenon in the case of deposition of Cu2O via electrochemical method. The amount of Cu2O deposited on the TiO2NAFs can be varied by adjusting the concentration of Cu(II) in the organic solution. UV-vis spectra measurement indicates that the decoration of TiO2NAFs with Cu2O nanoparticles greatly improves their ability to respond to visible light. By examining the photocurrent and photodegradation of methyl orange under simulated sunlight, it is found that these Cu2O-decorated TiO2NAFs show much more photoactive in comparison with the as-prepared TiO2NAFs.

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32

Yin, Tai-Hsin, Bu-Jine Liu, Yu-Wei Lin, Yi-Syuan Li, Chih-Wei Lai, Yu-Pin Lan, Changsik Choi, Han-Chen Chang, and YongMan Choi. "Electrodeposition of Copper Oxides as Cost-Effective Heterojunction Photoelectrode Materials for Solar Water Splitting." Coatings 12, no. 12 (November 28, 2022): 1839. http://dx.doi.org/10.3390/coatings12121839.

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Photoelectrocatalytic hydrogen production is crucial to reducing greenhouse gas emissions for carbon neutrality and meeting energy demands. Pivotal advances in photoelectrochemical (PEC) water splitting have been achieved by increasing solar light absorption. P-type Cu-based metal oxide materials have a wide range of energy band gaps and outstanding band edges for PEC water splitting. In this study, we first prepared Cu2O thin films using electrodeposition and fabricated a heterojunction structure of CuO/Cu2O by controlling annealing temperatures. The surface morphological, optical, and electrochemical properties were characterized using various analytical tools. X-ray and Raman spectroscopic approaches were used to verify the heterojunction of CuO/Cu2O, while surface analyses revealed surface roughness changes in thin films as the annealing temperatures increased. Electrochemical impedance spectroscopic measurements in conjunction with the Mott–Schottky analysis confirm that the CuO/Cu2O heterojunction thin film can boost photocurrent generation (1.03 mA/cm2 at 0 V vs. RHE) via enhanced light absorption, a higher carrier density, and a higher flat band potential than CuO and Cu2O thin films (0.92 and 0.08 mA/cm2, respectively).

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33

Bhattacharyya, S. R., D. Reppin, P. Sanguino, R. Ayouchi, A. Polity, R. Schwarz, D. Hofmann, and B. K. Meyer. "Photoconductivity Study of Sputter-Deposited Cu2O Films." Acta Physica Polonica A 120, no. 6A (December 2011): A—11—A—14. http://dx.doi.org/10.12693/aphyspola.120.a-11.

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34

Sebastian, P. J., J. Quintana, F. Avila, and X. Mathew. "Electrodeposited Cu2O thin films for solar conversion." Surface Engineering 16, no. 1 (February 2000): 47–49. http://dx.doi.org/10.1179/026708400322911519.

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35

Mahalingam, T., J. S. P. Chitra, G. Ravi, J. P. Chu, and P. J. Sebastian. "Characterization of pulse plated Cu2O thin films." Surface and Coatings Technology 168, no. 2-3 (May 2003): 111–14. http://dx.doi.org/10.1016/s0257-8972(03)00211-1.

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36

Mohamad, Fariza, Kah Hao Cheong, Nabiah binti Zinal, Nurliyana binti Mohamad Arifin, Asyikin Sasha binti Mohd Hanif, Nik Hisyamudin Muhd Nor, and Masanobu Izaki. "Cyclic Voltammetry Measurement for n-Type Cu₂O Thin Film Using Copper Sulphate-Based Solution." Key Engineering Materials 730 (February 2017): 119–24. http://dx.doi.org/10.4028/www.scientific.net/kem.730.119.

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Cuprous oxide (Cu2O) is a promising material for solar cell application. Due to its various advantages over silicon material, it has been exploited extensively to be use in photovoltaic cell. Cu2O thin films were electrodeposited in sulfate-based solution. Cyclic voltammorgram (CV) measurement was used to investigate the reduction process under controlled parameters. Deposition potential of-0.1V vs. Ag/AgCl was used for the fabrication of Cu2O thin film based on the CV measurement. CV also revealed that the deposition speed was dependent on the bath pH and the temperature. X-ray diffraction (XRD) measurement, Field Emission Scanning-Electron Microscopy (FE-SEM) and Ultraviolet-visible spectroscopy (UV-Vis) were performed to characterize the deposited thin films. The n-Cu2O was successfully fabricated on FTO glass substrate with (111)-prefered orientation. Surface morphology of the thin films were observed to be in flower-like shape combination with pyramidal and triangular shape.

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37

Halin, D. S. C., I. A. Talib, A. R. Daud, and M. A. A. Hamid. "Characterizations of Cuprous Oxide Thin Films Prepared by Sol-Gel Spin Coating Technique with Different Additives for the Photoelectrochemical Solar Cell." International Journal of Photoenergy 2014 (2014): 1–6. http://dx.doi.org/10.1155/2014/352156.

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Cuprous oxide (Cu2O) thin films were deposited onto indium tin oxide (ITO) coated glass substrate by sol-gel spin coating technique using different additives, namely, polyethylene glycol and ethylene glycol. It was found that the organic additives added had a significant influence on the formation of Cu2O films and lead to different microstructures and optical properties. The films were characterized by X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), and ultraviolet-visible spectroscopy (UV-Vis). Based on the FESEM micrographs, the grain size of film prepared using polyethylene glycol additive has smaller grains of about 83 nm with irregular shapes. The highest optical absorbance film was obtained by the addition of polyethylene glycol. The Cu2O thin films were used as a working electrode in the application of photoelectrochemical solar cell (PESC).

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38

Halin, Dewi Suriyani Che, Haiza Haroon, Ibrahim Abu Talib, Abdul Razak Daud, and Muhammad Azmi Abd Hamid. "Preparation of Photoelectrochemical Cell of ITO/Cu₂O/PVC-LiClO₄/Graphite Using Cu₂O Films as an Active Layer." Advanced Materials Research 895 (February 2014): 526–30. http://dx.doi.org/10.4028/www.scientific.net/amr.895.526.

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Cuprous oxide (Cu2O) thin films were successfully grown on indium tin oxide (ITO) coated glass by sol-gel spin coating using diethanolamine (DEA) as a solubility agent. The films were annealed at 350 °C in 5% H2 + 95% N2 atmosphere. The films were characterized by X-ray diffraction (XRD) and field emission scanning electron microscopy (FESEM). Based on the SEM micrograph of the as obtained film, the film shows better coverage with the four sided pyramidal shape grain size of 108 nm. The prepared Cu2O thin film was used as an active electrode for photoelectrochemical cell of ITO/Cu2O/PVC-LiClO4/graphite. The photovoltaic cell was tested using current-voltage characteristic under light illumination of 100 mW/cm2.

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39

Ehara, Takashi, Taichi Sasaki, and Hiroo Motomiya. "Application of Small Size Solar Furnace onto Preparation of Copper Oxide Thin Films by Sol-Gel Route." Key Engineering Materials 703 (August 2016): 209–13. http://dx.doi.org/10.4028/www.scientific.net/kem.703.209.

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In this manuscript, we will describe the preparation of copper oxide thin films by sol-gel route using solar furnace with area of about 1.5 m2 as a rapid thermal annealing apparatus. The gel films prepared by spin-coating of Cu acetate solution transferred to CuO or Cu2O films after thermal annealing for 1 min employing solar furnace consists of Fresnel lens. The result reveals that the solar furnace can provide enough energy to cause the high temperature reaction of sol-gel route copper oxide synthesis. In addition, the result displays that the solar furnace is preferable apparatus to carry out a kind of high temperature rapid annealing. The oxidization reaction of the gel films significantly depends on the structure of the gel films before annealing. In the case of the gel film which contains little CuO, the film becomes mixture of CuO and Cu2O after the annealing by solar furnace. In contrast, the gel film with CuO structure transferred to pure Cu2O film after the annealing.

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40

Ahmed, Sohail, M. M. Shahid, Shahzad Abu Bakar, Numan Arshed, Wan Jefrey Basirun, and H. Fouad. "Fabrication and Characterization of SnO–Cu2O Mixed Metal Oxide Thin Films for Photoelectrochemical Applications." Journal of Nanoscience and Nanotechnology 20, no. 12 (December 1, 2020): 7705–9. http://dx.doi.org/10.1166/jnn.2020.18570.

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Herein, we report the synthesis of SnO, Cu2O and SnO–Cu2O mixed oxide thin films on fluorinedoped tin oxide (FTO) substrate by Aerosol-Assisted Chemical Vapour Deposition (AACVD) process using [Cu (dmae)2(H2O)] and [Sn (dmae) (OAc)]2 as molecular precursors for SnO and Cu2O, respectively at 400 °C. The X-ray diffraction (XRD) pattern can be ascribed to the tetragonal phase of SnO crystals with space group P4 and cubic phase of Cu2O crystals with space group Pn- 3m/nmm, respectively. The surface morphology characteristics of SnO, Cu2O and SnO–Cu2Omixed oxide have been investigated using Field Emission Scanning Electron Microscope (FESEM) which revealed that the SnO was grown homogeneously in cubical shape while Cu2O possess nano balls shaped morphologies. The UV band gap values of SnO–Cu2O mixed oxide thin film was found to be 2.6 eV appropriate for photoelectrochemical (PEC) applications. The synthesized material was proposed for PEC applications and has shown enhanced catalytic performance in the presence of light.

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Abdelfatah, Mahmoud, Nourhan Darwesh, Mohamed A. Habib, Omar K. Alduaij, Abdelhamid El-Shaer, and Walid Ismail. "Enhancement of Structural, Optical and Photoelectrochemical Properties of n−Cu2O Thin Films with K Ions Doping toward Biosensor and Solar Cell Applications." Nanomaterials 13, no. 7 (April 4, 2023): 1272. http://dx.doi.org/10.3390/nano13071272.

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n-type Cu2O thin films were grown on conductive FTO substrates using a low-cost electrodeposition method. The doping of the n−Cu2O thin films with K ions was well identified using XRD, Raman, SEM, EDX, UV-vis, PL, photocurrent, Mott–Schottky, and EIS measurements. The results of the XRD show the creation of cubic Cu2O polycrystalline and monoclinic CuO, with the crystallite sizes ranging from 55 to 25.2 nm. The Raman analysis confirmed the presence of functional groups corresponding to the Cu2O and CuO in the fabricated samples. Moreover, the samples’ crystallinity and morphology change with the doping concentrations which was confirmed by SEM. The PL results show two characteristic emission peaks at 520 and 690 nm which are due to the interband transitions in the Cu2O as well as the oxygen vacancies in the CuO, respectively. Moreover, the PL strength was quenched at higher doping concentrations which reveals that the dopant K limits e−/h+ pairs recombination by trapped electrons and holes. The optical results show that the absorption edge is positioned between 425 and 460 nm. The computed Eg for the undoped and K−doped n−Cu2O was observed to be between 2.39 and 2.21 eV. The photocurrent measurements displayed that the grown thin films have the characteristic behavior of n-type semiconductors. Furthermore, the photocurrent is enhanced by raising the doped concentration, where the maximum value was achieved with 0.1 M of K ions. The Mott–Schottky measurements revealed that the flat band potential and donor density vary with a doping concentration from −0.87 to −0.71 V and 1.3 × 1017 to 3.2 × 1017 cm−3, respectively. EIS shows that the lowest resistivity to charge transfer (Rct) was attained at a 0.1 M concentration of K ions. The outcomes indicate that doping n−Cu2O thin films are an excellent candidate for biosensor and photovoltaic applications.

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42

LI, WENHAO. "SYNTHESIS OF CUPROUS OXIDE THIN FILMS BY RF-MAGNETRON SPUTTERING." Surface Review and Letters 25, no. 02 (February 2018): 1850051. http://dx.doi.org/10.1142/s0218625x18500518.

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Cuprous oxide (Cu2O) thin films were produced from metallic Cu targets on [Formula: see text]-Al2O3 (000[Formula: see text]) substrate by radio frequency magnetron sputtering technology. Three batches of samples were deposited under various sputtering parameters by modulating substrate temperature, gas flow and sputtering power, respectively. The samples were characterized by X-ray diffraction and field-emission scanning electron microscopy. Through the experiment, the influences of the sputtering conditions were systematically investigated. It could be inferred that the crystallization extent and the crystal orientation in Cu2O thin films mainly depend on the temperature exchange, which contribute to the variation of the film morphology. Moreover, the gas flow has an effect on the valence of the copper ion in the film and the sputtering power mainly affects the growth rate of the films. This research promotes a more specific scheme to deposit proper Cu2O thin films with proper morphology and useful properties.

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43

Dasineh Khiavi, Negar, Reza Katal, Saeideh Kholghi Eshkalak, Saeid Masudy-Panah, Seeram Ramakrishna, and Hu Jiangyong. "Visible Light Driven Heterojunction Photocatalyst of CuO–Cu2O Thin Films for Photocatalytic Degradation of Organic Pollutants." Nanomaterials 9, no. 7 (July 13, 2019): 1011. http://dx.doi.org/10.3390/nano9071011.

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A high recombination rate and low charge collection are the main limiting factors of copper oxides (cupric and cuprous oxide) for the photocatalytic degradation of organic pollutants. In this paper, a high performance copper oxide photocatalyst was developed by integrating cupric oxide (CuO) and cuprous oxide (Cu2O) thin films, which showed superior performance for the photocatalytic degradation of methylene blue (MB) compared to the control CuO and Cu2O photocatalyst. Our results show that a heterojunction photocatalyst of CuO–Cu2O thin films could significantly increase the charge collection, reduce the recombination rate, and improve the photocatalytic activity.

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44

Hu, Fei, Zhi Yu He, Xiao Hong Li, and Yue Hui Hu. "Optical Transmittance and Band Gap of Electrodeposited Cu₂O/ITO Layers." Applied Mechanics and Materials 34-35 (October 2010): 1421–24. http://dx.doi.org/10.4028/www.scientific.net/amm.34-35.1421.

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Cuprous oxide films are successfully electrodeposited through the reduction of cupric ions in alkaline and acid electrolytes. The effect of electrodeposition parameters on the optical band gaps of Cu2O films is investigated using UV-vis spectroscopy. It is found that the optical transmittances and the band gaps of the Cu2O thin films are strongly influenced by the electrodeposition bath, the temperature, the current density, and the pH value. The band gaps are varied from 1.80 eV to 2.43 eV with different electrodeposition parameters.

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45

Smilyk, Vitaliy, Sergii Fomaniyk, Gennady Kolbasov, Igor Rysetskiy, and Michael Danilov. "SYNTHESIS AND PHOTOELECTROCHEMICAL PROPERTIES OF SU2O-CU3VO4 COMPOSITE FILMS." Ukrainian Chemistry Journal 89, no. 2 (March 24, 2023): 83–90. http://dx.doi.org/10.33609/2708-129x.89.02.2023.83-90.

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Cu2O-Cu3VO4 films were obtained by electrochemical synthesis. The analysis of polarization curves and Pourbaix diagrams for copper and vanadium ions made it possible to analyze the possible reactions that occur during the deposition of films. At potentials from 0 to -0.2V, mainly monovalent copper oxide Cu2O with Cu3VO4 impurities precipitated in the working solution. At the same time, there are two competing processes of acidification of the near-electrode layer as a result Cu2O formation reaction and alkalinization as a result of the chemical interaction of Cu2O with HVO42-. The formation of an excess of OH- ions can inhibit the reaction rate of the formation of Cu3VO4, accelerating the reaction of the formation of Cu2O. Thus, deposition of Cu3VO4 will take place to a lesser extent compared to Cu2O. Accordingly, to increase the yield of Cu3VO4, an attempt was made to reduce the deposition current, which, according to literature, helps to reduce the effect of the pH change near the electrode layer. Where, as known the critical current limit at change pH starts from 5 or more mA/cm2. For the synthesis of the films, a current of up to 1 mA/cm2 selected, which contributed to the production of the Cu3VO4 - Cu2O composite, as was established further from the analysis of X-ray patterns. It is shown that their photoelectrochemical properties depend on the heat treatment conditions. This is expressed by the difference in the spectral characteristics of the quantum yield and the value of the photocurrent in the samples annealed in air and argon. Using the X-ray phase analysis method, it was established that heat treatment in argon contributes to the formation of a Cu3VO4 and Cu2O composite, in contrast to heat treatment in air, where a mixture of CuO and V2O5 oxides is mainly formed. In the film annealed in air due to impact of wide-band oxide compounds, a smaller value of the quantum yield of the photoelectrochemical current and a narrower spectral dependence were observed. The stretching of the spectrum into the region of visible light on the spectral curves of the photocurrent quantum yield is caused by the contribution of copper vanadate with Eg = 1.5 eV. Analysis of photocurrent quantum output spectra and X-ray patterns showed that an increase in monovalent copper in the film structure contributes to the growth of photocurrent in the wavelength range of 450-600nm at a potential of -0.2 relative. h.s.e in 2 times. This indicates a positive effect of heat treatment in argon on increasing the efficiency of photocathodes based on a composite of Cu3VO4 and Cu2O for photoelectrochemical cells.

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46

Rahayu, Kharisma Luthfiaratri, Abdul Haris, and Gunawan Gunawan. "Effect of Ascorbic Acid Concentration on Cu2O Production for Photoelectrochemical Water Splitting on Photocathode Thin Films." Jurnal Kimia Sains dan Aplikasi 25, no. 12 (December 21, 2022): 442–49. http://dx.doi.org/10.14710/jksa.25.12.442-449.

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Hydrogen energy has great potential as a renewable energy source. Electrochemical water-splitting can be employed to obtain hydrogen by converting solar energy into hydrogen. In this study, Cu2O thin film electrodes have been successfully synthesized using ascorbic acid using the spin coating method. This study aimed to determine the effect of ascorbic acid in manufacturing Cu2O semiconductors as photocathodes and their activity for electrochemical water-splitting. The results indicated that ascorbate affected the photon current and onset potential of the Cu2O semiconductor. The synthesis results found that Cu2O at C1 (lower concentration than Cu2+) yielded 95.69%, and the yield for Cu2O at C2 (concentration equal to Cu2+) was 96.2%. The yield for Cu2O at C3 (concentration greater than Cu2+) was 99.82%. The photon currents generated by adding 3%, 6%, and 9% ascorbate solution were 1.18, 1.69, and 1.78 mA/cm2, respectively, at 0.3 V vs. RHE (Reversible Hydrogen Electrode). X-ray diffraction analysis revealed that the sample consisted of Cu2O C3 with an average grain size of 17.55 nm. Meanwhile, Cu2O C1 and Cu2O C2 had average grain sizes of 38.99 nm and 36.42 nm, respectively. SEM analysis showed the presence of Cu2O with a cuboid and flower-like morphology. EDX analysis showed that the samples contained elements of Cu: O, 73.97%: 26.03%; 79.89%: 20.11% and 98.43%: 1.57% respectively.

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47

Sawicka-Chudy, P., M. Sibiński, R. Pawełek, G. Wisz, B. Cieniek, P. Potera, P. Szczepan, S. Adamiak, M. Cholewa, and Ł. Głowa. "Characteristics of TiO2, Cu2O, and TiO2/Cu2O thin films for application in PV devices." AIP Advances 9, no. 5 (May 2019): 055206. http://dx.doi.org/10.1063/1.5093037.

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48

Nishi, Yuki, Toshihiro Miyata, and Tadatsugu Minami. "Electrochemically deposited Cu2O thin films on thermally oxidized Cu2O sheets for solar cell applications." Solar Energy Materials and Solar Cells 155 (October 2016): 405–10. http://dx.doi.org/10.1016/j.solmat.2016.06.013.

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49

Zi, Xing Fa, Rui Ming Liu, Qing Ye, and Xin Zhu Shu. "Structure and Optical Property of Cu₂O:N Thin Film Deposited by Reactive Pulse Magnetron Sputtering." Advanced Materials Research 951 (May 2014): 104–8. http://dx.doi.org/10.4028/www.scientific.net/amr.951.104.

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N-doped Cu2O (Cu2O:N) thin films were deposited on glass substrate by reactive pulse magnetron sputtering method using Cu target. Crystalline phases of thin films were controlled by adjusting N2/ O2flow rate ratio and sputtering power precisely during the sputtering process, and the single phase of Cu2O(111) thin films were obtained at room temperature. The thin films deposited at different sputtering powers were characteristics of 2D growth and the root mean square (RMS) of surface roughness of thin films gradually increased with the increasing of sputtering power. The optical band gap (Eg) of thin films were in the range 2.18-2.35 eV, and slightly decreased with increasing of sputtering power from 45 W to 90 W.

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Gahlawat, Soniya, Nusrat Rashid та Pravin P. Ingole. "n-Type Cu2O/α-Fe2O3 Heterojunctions by Electrochemical Deposition: Tuning of Cu2O Thickness for Maximum Photoelectrochemical Performance". Zeitschrift für Physikalische Chemie 232, № 9-11 (28 серпня 2018): 1551–66. http://dx.doi.org/10.1515/zpch-2018-1140.

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Abstract Here, we report the enhanced photoelectrochemical performance of surface modified hematite thin films with n-type copper oxide nanostructures (Cu2O/Fe2O3) obtained through simple electrochemical deposition method. The thickness and amount of cuprous oxide layer were varied by simply changing the number of electrodeposition cycles (viz. 5, 10, 25, 50 and 100) in order to understand its thermodynamic and kinetic influence on the photoelectrochemical activity of the resultant nano-heterostructures. Structural and morphological characteristics of the obtained Cu2O/Fe2O3 films have been studied by absorption spectroscopy, X-ray diffraction, scanning electron microscopy, and energy-dispersive X-ray spectroscopy analysis. Electrochemical investigations such as linear sweep voltammetry, Mott–Schottky analysis, and electrochemical impedance spectroscopy suggested the formation of n-type Cu2O layers over the hematite films with varying charge-carrier densities, ranging from 0.56×1019 to 3.94×1019 cm−3, that varies with the number of cycles of electrochemical deposition. Besides, the thickness of deposited cuprous oxide layer is noted to alter the net electrochemical and photo-electrochemical response of the base material. An interesting, peak event was recorded for a particular thickness of the cuprous oxide layer (obtained after 25 cycles of electrochemical deposition) below and above which the efficiency of catalyst was impaired. The heterojunction obtained thus, followed well known Z-scheme and gave appreciable increment in the photocurrent response.

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