Готові списки джерел за темами / Cu-Si systems

Добірка наукової літератури з теми "Cu-Si systems"

Автор: Grafiati

Опубліковано: 6 вересня 2023

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Статті в журналах з теми "Cu-Si systems"

Cao Bo, Bao Liang-Man, Li Gong-Ping, and He Shan-Hu. "Diffusion and interface reaction of Cu and Si in Cu/SiO2/Si (111) systems." Acta Physica Sinica 55, no. 12 (2006): 6550. http://dx.doi.org/10.7498/aps.55.6550.

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Laurila, T., K. Zeng, J. Molarius, T. Riekkinen, I. Suni, and J. K. Kivilahti. "Effect of oxygen on the reactions in Si/Ta/Cu and Si/TaC/Cu systems." Microelectronic Engineering 64, no. 1-4 (October 2002): 279–87. http://dx.doi.org/10.1016/s0167-9317(02)00800-6.

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Soldi, Luca, Annabelle Laplace, Mathieu Roskosz, and Stéphane Gossé. "Phase diagram and thermodynamic model for the Cu-Si and the Cu-Fe-Si systems." Journal of Alloys and Compounds 803 (September 2019): 61–70. http://dx.doi.org/10.1016/j.jallcom.2019.06.236.

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ARSLAN, Hüseyin. "Viscosity Values of Ternary Au-Ag-Cu, Al-Cu-Si and Quaternary Al-Cu-Mg-Si Alloy Systems." Afyon Kocatepe University Journal of Sciences and Engineering 23, no. 4 (August 29, 2023): 865–73. http://dx.doi.org/10.35414/akufemubid.1198907.

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Анотація:

Bu çalışmada, üçlü Au-Ag-Cu sıvı alaşım sisteminin, Al-Cu-Si sıvı alaşım sisteminin ve dörtlü Al-Cu-Mg-Si sıvı alaşım sisteminin viskoziteleri altının, aliminyumun ve bakırın bir fonksiyonu olarak Au-Ag-Cu (xAg / xCu=0.543) 1373 K de, Alx(Cu50-Si50)(1-x), Cux(Al50-Si50)(1-x) 1375 K de ve Al-Cu7.6-Mg1.99-Si34.76 1500 K de farklı geometrik modeller kullanılarak hesaplanmıştır. Tüm sonuçlar, özellikle de Muggianu modeli ile hesaplanan sonuçlar, deneysel sonuçlarla iyi bir uyum göstermiştir. xSi = xCu, xMg / xCu = r ve r = 0.1, 0.5, 1 oranlarda Al-Cu-Mg-Si alaşımlarının viskozitelerinin alüminyumun bir fonksiyonu olarak büyük bileşimsel bağımlılık gösterdiği ve Al kompozisyonunun (0.4-0.8) arasındaki değerlerine eşlik eden viskozite değerlerinin max. ve min. (1.4-0.3) mPas olduğu görüldü.

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Umemoto, M., M. Udaka, K. Kawasaki, and X. D. Liu. "Formation of ultrafine powders of binary alloy systems by plasma jet." Journal of Materials Research 13, no. 6 (June 1998): 1511–16. http://dx.doi.org/10.1557/jmr.1998.0210.

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Recently, a new method, i.e., a plasma jet method, was developed in our lab for the production of ultrafine powders. In the present work, we investigated the formation of binary Al–Fe, Al–Si, Fe–Si, Al–Cu, Al–Ni, Ni–Ti, Fe–Cu, and Fe–Ti ultrafine powders using this method. Premixed pure elemental powders of various compositions of Al–Fe, Al–Si, Fe–Si, Al–Cu, Al–Ni, Ni–Ti, Fe–Cu, and Fe–Ti were used as starting materials. These premixed powders were injected into the plasma jet of Ar–N2 working gas to form ultrafine powders. The obtained ultrafine powders were characterized by x-ray diffraction and transmission electron microscope to check the microstructures of ultrafine particles.

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Zhao, Jing Rui, Yong Du, Li Jun Zhang, Shu Hong Liu, Jin Huan Xia, and Jin Wei Wang. "Thermodynamic Calculation of the Liquidus Projections of the Al-Cu-Fe-Mg, Al-Cu-Mg-Si, and Al-Fe-Mg-Si Quaternary Systems on Al-Rich Corner." Materials Science Forum 993 (May 2020): 1031–42. http://dx.doi.org/10.4028/www.scientific.net/msf.993.1031.

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The thermodynamic calculations of Al-Cu-Fe-Mg, Al-Cu-Mg-Si and Al–Fe–Mg–Si quaternary systems were carried out using CALPHAD method, based on the Al–Cu–Fe–Mg–Si thermodynamic database. The liquidus projection of Al–Cu–Fe–Mg, Al–Cu–Mg–Si and Al–Fe–Mg–Si quaternary systems at Al-rich corner were constructed, and the solidification structures of Al-12Cu-7Mg-1Fe, Al-14Cu-2Mg-4Si, Al-0.3Fe-6Mg-12Si (wt.%) alloys were analyzed by the Scheil solidification simulation. The calculated results agree well with the previous experimental data. The liquidus projections of three quaternary aluminum alloys at the Al-rich corner were accurately plotted, which could be helpful for the analysis of solidification process of multicomponent alloy systems, and provide an important theoretical basis for the material design of aluminum alloys.

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Jacobs, MHG, and PJ Spencer. "Thermodynamic evaluation of the systems Cu-Si, Mg-Ni, Si-Sn and Si-Zn." Journal de Chimie Physique 90 (1993): 167–73. http://dx.doi.org/10.1051/jcp/1993900167.

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Wang, Aijun, Liangcai Zhou, Yi Kong, Yong Du, Zi-Kui Liu, Shun-Li Shang, Yifang Ouyang, Jiong Wang, Lijun Zhang, and Jianchuan Wang. "First-principles study of binary special quasirandom structures for the Al–Cu, Al–Si, Cu–Si, and Mg–Si systems." Calphad 33, no. 4 (December 2009): 769–73. http://dx.doi.org/10.1016/j.calphad.2009.10.007.

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Gao, Xing Xin, Yan Hui Jia, Gong Ping Li, Jun Ping Ma, and Yun Bo Wang. "The Diffusion and Interfacial Reaction of Cu/Si(100) Systems." Advanced Materials Research 287-290 (July 2011): 2302–7. http://dx.doi.org/10.4028/www.scientific.net/amr.287-290.2302.

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The Cu thin films have been deposited on Si(100) substrates by magnetron sputtering at room temperature. The samples were heat treated by conventional thermal annealing in different temperatures: 230°C, 350°C, 450°C and 500°C. The interface reaction and atomic diffusion of the Cu films and Si substrates between as-deposited and as-annealed at different temperatures are investigated by means of Rutherford backscattering spectrometry(RBS) and X-ray diffraction(XRD). Some significant results are obtained on the following aspects: (1) According to RBS, as-deposited Cu/Si(100) samples are not found interdiffusion, and the onset temperature of interdiffusion is 230°C. With the increase of temperature, the interdiffusion becomes more apparent. (2) After annealing at 230°C, the XRD results of the samples showed formation of Cu3Si(300). As the annealing temperature increases, the other copper-silicide phases are formed. The main copper-silicide phase is Cu3Si(300) after annealing at 500°C. It means that Cu3Si is a reliable copper-silicide in a wide range for the Cu/Si(100) interface.

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Zhao, Jing Rui, Yong Du, Li Jun Zhang, Shu Hong Liu, Jin Huan Xia, and Jin Wei Wang. "Thermodynamic Calculation of the Liquidus Projections of the Al-Cu-Fe-Si and Al-Cu-Fe-Mg-Si Multicomponent Systems on Al-Rich Side." Materials Science Forum 993 (May 2020): 984–95. http://dx.doi.org/10.4028/www.scientific.net/msf.993.984.

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The thermodynamic calculations of Al–Cu–Fe–Si quaternary system and Al–Cu–Fe–Mg–Si quinary system were carried out using CALPHAD approach based on the Al–Cu–Fe–Mg–Si thermodynamic database. The liquidus surface projection of Al–Cu–Fe–Si quaternary system at the Al-rich corner was constructed, and then the solidification structures of four Al–Cu–Fe–Si alloys were analyzed by the Gulliver-Scheil solidification simulation. The calculated results were in good agreement with the previous experimental data. The liquidus surface projections of A1–Cu–Fe–Mg–Si quinary system at the region of Al-Cu, Al-Si and Al-Mg were constructed, respectively. The liquidus projection of the multicomponent aluminum alloy system at the Al-rich side was accurately drawn, which could accurately predict the primary phase in the solidification process of the alloy. This work has an important guiding significance for the design of the aluminum alloys.

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Дисертації з теми "Cu-Si systems"

Zhang, Duyao. "Thermodynamic characterisation of semi-solid processability in alloys based on Al-Si, Al-Cu and Al-Mg binary systems." Thesis, University of Leicester, 2015. http://hdl.handle.net/2381/32538.

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The processing window is important for the semisolid processability of alloys. Applications of semi-solid metal (SSM) processing, especially aluminium alloys have been expanding for their excellent mechanical properties. However, the alloys well suited and commercially used for SSM processing today are limited in types. The main purpose of this Ph.D. project is to understand what makes an alloy suitable for SSM processing on both aspects of thermodynamics and kinetics. This research started with a fundamental study of binary alloys based on Al-Si, Al-Cu and Al-Mg systems (wt%): Al-1Si, Al-5Si, Al-12Si and Al-17Si; Al-1Cu, Al-2Cu and Al-5Cu; Al-0.5Mg, Al-3Mg and Al-5.5Mg. These are representative of Si, Cu and Mg contents in commercial alloys used for SSM processing. The Single-Pan Scanning Calorimeter (SPSC) and Differential Scanning Calorimeter (DSC) were used to investigate the liquid fraction changes during heating and cooling of these binary alloys. Thermo-Calc and DICTRA (DIffusion-Controlled TRAnsformations) software have been used to predict the fraction liquid versus temperature taking into account both thermodynamics and kinetics. Comparison of the predictions with experimental data revealed that the simulation results show the same pattern with experimental results in the fraction liquid-temperature relationship. However, the SPSC results are closer to the prediction than DSC curves are, even with the relatively large sample size associated with SPSC. This is potentially a significant result as predicting the liquid fraction versus temperature for the heating of a billet for semi-solid processing remains one of the challenges. The results also suggest that the fraction liquid sensitivity to time should be identified as a critical parameter of the process window for semi-solid processing in addition to the fraction liquid sensitivity to temperature. For microstructure investigation, microanalysis techniques, including Scanning Electron Microscopy (SEM) and micro-indentation testing, have been used on polished sections, and compared to theoretical predictions. In addition, some parts of this project are in cooperation with General Research Institute for Nonferrous Metals (GRINM), which aims to design and develop high performance semi-solid alloys. Thermodynamic analysis (both predictions and experiments) were carried out on thixoformed 319s (2.95Cu, 6.10Si, 0.37Mg, wt%) and 201 (4.80Cu, 0.7Ag, wt%) aluminium alloys. SEM techniques and Transmission Electron Microscopy (TEM) were used for the microstructural characterisation. The results showed that the DSC curves were sensitive to microsegregation in SSM alloys and resulted in a lower liquid fraction than the cast alloys calculated through the integration method from the DSC results. Al2Cu phase in SSM alloys 319s and 201 can be dissolved into matrix up to 0.4 % before melting temperature under 3K/min heating rate when compared with 10K/min heating rate. The DSC scan rate should be carefully selected as higher heating rate can inhibit dissolution of the intermetallic phases during heating leading to less accurate liquid fractions predictions.

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Bayerl, Dominik Verfasser], Rainer [Gutachter] [Schmid-Fetzer, and Babette [Gutachter] Tonn. "Beitrag zur Etablierung der Kinetik-Simulation zur Legierungs- und Prozessoptimierung ausscheidungshärtender Werkstoffe am Beispiel des Cu-Co-Ni-Si Systems / Dominik Bayerl ; Gutachter: Rainer Schmid-Fetzer, Babette Tonn." Clausthal-Zellerfeld : Technische Universität Clausthal, 2018. http://d-nb.info/1231363959/34.

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Reshöft, Klaus. "Zeitaufgelöste STM-Untersuchungen zur Silizid- und Metall-Epitaxie der Systeme Fe-, Cu-, Pt-Si(111) und Cu-W(110)." [S.l. : s.n.], 2001. http://e-diss.uni-kiel.de/diss>=/d525.pdf.

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Banda, Wezi. "High temperature phase equilibria in the Fe-Co-Cu-Si system pertinent to slag cleaning." Thesis, Link to the online version, 2006. http://hdl.handle.net/10019.1/1351.

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Kovarik, Libor. "Microstructural study and modeling of metastable phases and their effect on strenghthening [sic] in Al-Mg-Cu-Si alloying system." The Ohio State University, 2006. http://rave.ohiolink.edu/etdc/view?acc_num=osu1149006665.

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Yen, I.-Shan, and 顏意珊. "Interfacial reactions of Au/Cu/Si and Ta/Cu/Si systems." Thesis, 1994. http://ndltd.ncl.edu.tw/handle/79442262924381827660.

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Liu, Lian. "μSR Study of B20 Magnetic Systems: MnSi, Mn₀.₉Fe₀.₁Si and Cu₂OSeO₃". Thesis, 2016. https://doi.org/10.7916/D82F7ND1.

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A skyrmion is a vortex-like spin pattern which has been observed in so-called B20 magnetic systems such as MnSi, (Mn,Fe)Si and a few other metallic magnets as well as in insulating Cu₂OSeO₃. We conduct a comprehensive study of muon spin relaxation (μSR) on bulk single crystals of MnSi and (Mn,Fe)Si, a MBE thin film of MnSi, and a ceramic specimen of Cu₂OSeO₃ in this work. The generic second-order like phase transition indicated by 1/T₁ peaks at T_c in bulk systems is discussed in light of the Brazovskii-type first-order phase transition due to the presence of the DM interaction. We also discuss the different temperature dependences of μ⁺ spin-lattice relaxation rate 1/T₁ in bulk pure systems MnSi and Cu₂OSeO₃ and their commonalities in the paramagnetic state and the ordered state due to the DM interaction. Furthermore, we highlight the enhanced 1/T₁ in the skyrmion crystal (SkX) phase compared to neighboring conical phases due to an abundance of low-energy magnetic fluctuations/excitations. This abundance is corroborated by the reduced static order parameter in the SkX phase of MnSi compared to neighboring conical phases, deduced by combining μSR experiments and magnetic field simulations. The intermediate (IM) region above T_c, where the modification of magnetic transition by the DM interaction starts to appear in MnSi, exhibit multi-time scale spin fluctuations, topologically non-trivial Hall resistivity and non-Fermi-liquid exponent of longitudinal resistivity in single-crystal Mn₀.₉Fe₀.₁Si and the MnSi MBE thin film, similar to the magnetically disordered phase of pure MnSi under hydrostatic pressure. These three defining features indicate a fluctuating skyrmion liquid in this magnetically ordered state, stabilized by pressure, disorder or reduced dimensionality. Moreover, the magnetic transition is strongly first order in the MnSi MBE thin film sample, different from the Brazovskii-type weakly first order transition in bulk samples, suggesting the importance of reduced dimensionality in modifying the nature of magnetic phase transitions in B20 systems.

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Somaiah, Nalla. "Mass Transport in Cu-Interlayer-Si Systems under Various Thermo-Electro-Mechanical Excursions." Thesis, 2018. https://etd.iisc.ac.in/handle/2005/4946.

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This work falls in general area of the electro-thermo-mechanical driven mass transport in Cu-Si systems, which often finds relevance while accessing reliability issues pertaining to thin film interconnects in microelectronic devices. In such a system, the major driving forces are electric potential gradient (and hence electromigration), current crowding induced temperature gradient (and hence thermomigration) and coefficient of thermal expansion (CTE) mismatch induced stresses. Herein, a coupling between different driving forces, such as electromigration and thermomigration, may also occur, which can subdue or accelerate the mass transport in Cu. In addition, due to decrease in the thickness of interconnects to a few nanometers, the contribution of diffusion through the Cu-Si interface in overall mass transport cannot be neglected due to an increase in the interface area to volume ratio. Therefore, it can be inferred that electromigration, thermomigration and thermal stress induced failures of Cu-Si systems should be sensitive to the property of the interface, making it imperative to investigate the role of the interlayer placed in between Cu and Si on mass transport. Accordingly, this work focuses on studying the role of the coupling between the aforementioned major driving forces, especially electric potential gradient and temperature gradient, and the interlayer on the mass transport behavior in Cu-Si system. Firstly, the effect of current crowding induced temperature gradient on the electric current induced mass transport in Cu films was studied. This effect was studied using samples fabricated according to the standard Blech configuration, wherein long Cu thin film was deposited on Si substrate with a very thin W interlayer. In these tests, regular mass transport at the cathode, termed as forward mass transport, was observed along with an anomalous mass depletion at the anode, termed as backward mass transport, especially when currents of very high current density (>106 A/m2) was passed. The anomalous backward mass transport behavior is explained by illuminating the coupling between the temperature gradient induced mass transport (i.e., thermomigration) and the electric current induced mass transport (i.e., electromigration) at the anode. Herein, temperature gradient was estimated using finite element analysis, performed using COMSOL Multiphysics, using the full-length scale model. The kinetics of the anomalous backward mass transport at the anode was also studied by varying current density. The anomalous mass transport, which has origins in the establishment of very high temperature gradients at the anode, became more pronounced with increase in the higher current density. In addition to the temperature gradient, the temperature of the sample also increased with an increase in the current density, and since the kinetics of electromigration as well as thermomigration induced mass transport are diffusion controlled, an increase in the current density further exacerbates the net mass transport, irrespective of whether it is regular forward or anomalous backward mass transport. Subsequent to establishment of the existence of significant thermomigration-electromigration coupling in samples fabricated using Blech configuration, systemic experiments were performed to understand the role of the thermomigration-electromigration coupling induced mass transport on the so-called Blech length effect1. Herein, experiments were performed by passing current through a sample wherein a long Cu film on Si substrate with W interlayer was segmented into multiple stripes with length varying from 10 m to 200 m. Contrary to the Blech length effect, these samples showed enhancement in the regular mass transport at the 1 Blech length effect is understood as elimination of electromigration (i.e., material depletion at the cathode and material accumulation in form of whiskers or hillocks at anode) when the product of the current density and the sample length is smaller than a critical value. cathode with a decrease in the stripe length. We term this behavior as inverse Blech length effect. These results imply that thermomigration, besides electromigration, should also be considered while understanding the role of electric current on reliability of Cu-Si systems having bends, e.g., modern 3-D Cu interconnects fabricated using dual damascene process, etc., as the thermomigration-electromigration coupling violates the conventional wisdoms of mass depletion only at the cathode, existence of Blech length effect, etc. Finally, the role of interlayers, such as W, Ta, and Ti, in the mass transport in Cu in Cu-Si system due to the electromigration-thermomigration coupling and CTE mismatch induced thermal stresses was studied. A significant role of the interlayer was observed in the electromigration-thermomigration coupling induced mass transport, wherein a strongly bonded interface, such as Cu-Ti, did not show an inverse Blech length effect, whereas a weakly bonded interface, such as Cu-Ta, Cu-W and Cu-TiO2, showed the aforementioned inverse Blech length effect. The interface structure was characterized using transmission electron microscope, and the obtained information, along with the finite element analysis, was used to explain the observed results. Similarly, the experiments performed by cycling the temperature of the Cu-Si samples between -50 to 150 oC revealed a significant role of the interlayer on the extent as well as the nature of plastic deformation in Cu. These experiments were performed by depositing Cu islands on Si substrate with Ni, W or no interlayer and by measuring the extent of sliding of Cu film. In addition to sliding, a few Cu grains also protruded to accommodate the CTE mismatch induced stresses. In summary, the mass transport in Cu-Si system can be tuned by understanding the role of the sample geometry, coupling between driving forces and the interlayer.

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Wang, Hong-I., and 王弘毅. "Reliability of Cu/SiO2/Si system." Thesis, 1995. http://ndltd.ncl.edu.tw/handle/63741354802081463183.

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碩士
國立交通大學
電子研究所
83
Thermal stability of the Cu/SiO2/Si system was investigated with respect to the dielectric degradation and Cu ion migration in the Cu-gate MOS capacitor. We used the rapid thermal annealing (RTA) and the technique of bias-temperature stress in conjunction with the dielectric breakdown field (Ebd) and SiO2/ Si interface state density (Dit) measurements to characterize the thermal stability of the Cu/SiO2/Si system. We found that the Ebd degradation started to occur after Cu/SiO2/Si structure was annealed with 60 sec RTA at a temperature as low as 300℃; and the dielectric strength deteriorated progressively with the increase of annealing temperature. The dielectric degradation is presumably due to Cu dissolution in SiO2 layer in the form of positive ion. The mobility of Cu ion in the SiO2 layer was evaluated using the data obtained from the bias- temperature stress. The Cu ion concentration in the SiO2 layer of Cu-gate MOS capacitor resulting from RTA anneal was also evaluated using a simple extractation scheme. It is also concluded that Cu is a fast diffusion specises in SiO2 and may diffuse into Si substrate once it arrives at the SiO2/Si interface.

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Mitrasinovic, Aleksandar. "Characterization of the Cu-Si System and Utilization of Metallurgical Techniques in Silicon Refining for Solar Cell Applications." Thesis, 2010. http://hdl.handle.net/1807/26210.

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Two methods for refining metallurgical grade silicon to solar grade silicon have been investigated. The first method involved the reduction of impurities from metallurgical grade silicon by high temperature vacuum refining. The concentrations of analyzed elements were reduced several times. The main steps in the second refining method include alloying with copper, solidification, grinding and heavy media separation. A metallographic study of the Si-Cu alloy showed the presence of only two microconstituents, mainly pure silicon dendrites and the Cu3Si intermetallic. SEM analysis showed a distinct boundary between the silicon and the Cu3Si phases, with a large concentration of microcracks along the boundary, which allowed for efficient separation. After alloying and grinding, a heavy media liquid was used to separate the light silicon phase from the heavier Cu3Si phase. Cu3Si residues together with the remaining impurities were found to be located at the surface of the pure silicon particles, and should be efficiently removed by acid leaching. Thirty elements were analyzed by the Inductively Coupled Plasma Mass Spectrometry (ICP) chemical analysis technique. ICP revealed a several times higher impurity level in the Cu3Si intermetallic than in the pure silicon; furthermore, the amounts of 22 elements in the refined silicon were reduced below the detection limit where the concentrations of 7 elements were below 1ppmw and 6 elements were below 2ppmw. The results showed that the suggested method is efficient in removing impurities from metallurgical grade silicon with great potential for further development.

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Книги з теми "Cu-Si systems"

μSR Study of B20 Magnetic Systems: MnSi, Mn₀.₉Fe₀.₁Si and Cu₂OSeO₃. [New York, N.Y.?]: [publisher not identified], 2016.

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Ourdjini, A. Growth kinetics, microstructure and mechanical properties in directionally solidified Al-Si and Al-Cu eutectic systems. Manchester: UMIST, 1993.

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Materials Science International Services Staff. Selected Systems from Co-Fe-Si to Cu-Fe-Pt. Springer, 2008.

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Iron Systems, Part 4: Selected Systems from Cu-Fe-Si to Fe-N-U. Berlin, Heidelberg: Springer Berlin Heidelberg, 2008.

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Частини книг з теми "Cu-Si systems"

Carow-Watamura, U., D. V. Louzguine, and A. Takeuchi. "Au-Cu-Si." In Physical Properties of Ternary Amorphous Alloys. Part 1: Systems from Ag-Al-Ca to Au-Pd-Si, 366–67. Berlin, Heidelberg: Springer Berlin Heidelberg, 2011. http://dx.doi.org/10.1007/978-3-642-03481-7_115.

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Carow-Watamura, U., D. V. Louzguine, and A. Takeuchi. "Cu-Pd-Si (248)." In Physical Properties of Ternary Amorphous Alloys. Part 3: Systems from Cr-Fe-P to Si-W-Zr, 141–68. Berlin, Heidelberg: Springer Berlin Heidelberg, 2011. http://dx.doi.org/10.1007/978-3-642-14133-1_37.

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Carow-Watamura, U., D. V. Louzguine, and A. Takeuchi. "Cu-Si-Zr (249)." In Physical Properties of Ternary Amorphous Alloys. Part 3: Systems from Cr-Fe-P to Si-W-Zr, 169. Berlin, Heidelberg: Springer Berlin Heidelberg, 2011. http://dx.doi.org/10.1007/978-3-642-14133-1_38.

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Froumin, N., M. Aizenshtein, N. Frage, and M. P. Dariel. "Interface Phenomena and Wettability in the B4C/(Me-Si) Systems (Me =Cu, Au, Sn)." In Ceramic Transactions Series, 93–101. Hoboken, NJ, USA: John Wiley & Sons, Inc., 2012. http://dx.doi.org/10.1002/9781118406038.ch12.

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Carow-Watamura, U., D. V. Louzguine, and A. Takeuchi. "Cu-Ga-Zr." In Physical Properties of Ternary Amorphous Alloys. Part 3: Systems from Cr-Fe-P to Si-W-Zr, 69–70. Berlin, Heidelberg: Springer Berlin Heidelberg, 2011. http://dx.doi.org/10.1007/978-3-642-14133-1_15.

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Carow-Watamura, U., D. V. Louzguine, and A. Takeuchi. "Cu-Gd-Mg." In Physical Properties of Ternary Amorphous Alloys. Part 3: Systems from Cr-Fe-P to Si-W-Zr, 71–72. Berlin, Heidelberg: Springer Berlin Heidelberg, 2011. http://dx.doi.org/10.1007/978-3-642-14133-1_16.

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Carow-Watamura, U., D. V. Louzguine, and A. Takeuchi. "Cu-Hf-Ti." In Physical Properties of Ternary Amorphous Alloys. Part 3: Systems from Cr-Fe-P to Si-W-Zr, 79–82. Berlin, Heidelberg: Springer Berlin Heidelberg, 2011. http://dx.doi.org/10.1007/978-3-642-14133-1_20.

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Carow-Watamura, U., D. V. Louzguine, and A. Takeuchi. "Cu-Mg-Tb." In Physical Properties of Ternary Amorphous Alloys. Part 3: Systems from Cr-Fe-P to Si-W-Zr, 87–89. Berlin, Heidelberg: Springer Berlin Heidelberg, 2011. http://dx.doi.org/10.1007/978-3-642-14133-1_24.

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Carow-Watamura, U., D. V. Louzguine, and A. Takeuchi. "Cu-Mo-Zr." In Physical Properties of Ternary Amorphous Alloys. Part 3: Systems from Cr-Fe-P to Si-W-Zr, 111. Berlin, Heidelberg: Springer Berlin Heidelberg, 2011. http://dx.doi.org/10.1007/978-3-642-14133-1_26.

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Carow-Watamura, U., D. V. Louzguine, and A. Takeuchi. "Cu-P-Pt." In Physical Properties of Ternary Amorphous Alloys. Part 3: Systems from Cr-Fe-P to Si-W-Zr, 137–38. Berlin, Heidelberg: Springer Berlin Heidelberg, 2011. http://dx.doi.org/10.1007/978-3-642-14133-1_34.

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Тези доповідей конференцій з теми "Cu-Si systems"

Zolanvari, A., and H. Sadeghi. "Characterization of Annealed Ni/Cu Multilayers on Si(100)." In 2009 Fifth International Conference on MEMS NANO, and Smart Systems. IEEE, 2009. http://dx.doi.org/10.1109/icmens.2009.59.

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Teh, W. H., C. Deeb, J. Burggraf, D. Arazi, R. Young, C. Senowitz, and A. Buxbaum. "Post-bond sub-500 nm alignment in 300 mm integrated face-to-face wafer-to-wafer Cu-Cu thermocompression, Si-Si fusion and oxideoxide fusion bonding." In 2010 IEEE International 3D Systems Integration Conference (3DIC). IEEE, 2010. http://dx.doi.org/10.1109/3dic.2010.5751447.

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Takeyama, Mayumi B., Masaru Sato, and Mitsunobu Yasuda. "Barrier properties of thin TaWN films in Cu(111)/TaWN/Si systems." In 2020 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2020. http://dx.doi.org/10.7567/ssdm.2020.c-1-04.

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Hasan, M. M., R. J. Highmore, and R. E. Somekh. "Effects of Sputtering Pressure on Roughness and Resputtering of Multilayers." In Physics of X-Ray Multilayer Structures. Washington, D.C.: Optica Publishing Group, 1992. http://dx.doi.org/10.1364/pxrayms.1992.mb2.

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This summary outlines studies of W-Si and Co-Cu multilayers. We recognize that W-Si is unlikely to make optimal x-ray mirrors, because Si is more strongly absorbing than, say, carbon for most radiation wavelengths, and because the known propensity of metal-silicon couples to interdiffuse to form silicides suggests that interfaces’are unlikely to be very sharp. W-Si is, though, a useful model system. A more extensive account of our work with W-Si and related systems is contained in [1]. Interfacial roughness is important in determining the properties not only of x-ray mirrors, but also of multilayer systems which exhibit so-called "giant magnetoresistance". We are using Co-Cu as a model system with which to study this phenomenon.

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Gokon, Nobuyuki, Tomoya Yamaguchi, Hyun-seok Cho, Selvan Bellan, Tsuyoshi Hatamachi, and Tatsuya Kodama. "Thermal storage/discharge performances of Cu-Si alloy for solar thermochemical process." In SOLARPACES 2016: International Conference on Concentrating Solar Power and Chemical Energy Systems. Author(s), 2017. http://dx.doi.org/10.1063/1.4984465.

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Pascucci, Jacopo, Fosca Conti, Sri Krishna Bhogaraju, Raffaella Signorini, E. Liu, Danilo Pedron, and Gordon Elger. "Micro-Raman to detect stress phenomena in Si-chips bonded onto Cu substrates." In Integrated Optics: Design, Devices, Systems and Applications VI, edited by Pavel Cheben, Jiří Čtyroký, and Iñigo Molina-Fernández. SPIE, 2021. http://dx.doi.org/10.1117/12.2576414.

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Takeyama, Mayumi B., Kazumi Satoh, Takaomi Itoi, Masakazu Sakagami, and Atsushi Noya. "Application of Thin Nano-Crystalline VN Barrier in Cu/VN/SiO2/Si Systems." In 2002 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2002. http://dx.doi.org/10.7567/ssdm.2002.p4-13.

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Watanabe, Naoya, Masahiro Aoyagi, Daisuke Katagawa, Tsubasa Bandoh, Takahiko Mitsui, and Eiichi Yamamoto. "Small-diameter TSV reveal process using direct Si/Cu grinding and metal contamination removal." In 2014 International 3D Systems Integration Conference (3DIC). IEEE, 2014. http://dx.doi.org/10.1109/3dic.2014.7152144.

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Ottaviani, M., F. Rondino, M. Moreno, L. Della Seta, P. Gislon, V. Orsetti, A. Rufoloni, A. Santoni, P. P. Prosini, and M. Pasquali. "Cu-catalyzed Si-NWs grown on “carbon paper” as anodes for Li-ion cells." In 15th International Conference on Concentrator Photovoltaic Systems (CPV-15). AIP Publishing, 2019. http://dx.doi.org/10.1063/1.5123571.

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Ma, Jun, Cody Gonzalez, Christopher Rahn, Mary Frecker, and Donghai Wang. "Experimental Study of Multifunctional NCM-Si Batteries With Self-Actuation." In ASME 2018 Conference on Smart Materials, Adaptive Structures and Intelligent Systems. American Society of Mechanical Engineers, 2018. http://dx.doi.org/10.1115/smasis2018-8004.

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Among anode materials for lithium ion batteries, silicon (Si) in known for high theoretical capacity and low cost. Si exhibits over 300% volume change during cycling, potentially providing large displacement. In this paper, we present the design, fabrication and testing of a multifunctional NCM-Si battery that not only stores energy, but also utilizes the volume change of Si for actuation. The battery is transparent, thus allowing the visualization of the actuation process during cycling. This paper shows Si anode design that stores energy and actuates through volume change associated with lithium insertion. Experimental results from a transparent battery show that a Cu current collector single-side coated with Si nanoparticles can store 10.634 mWh (charge)/2.074mWh (discharge) energy and bend laterally with over 40% beam length displacement. The unloaded anode is found to remain circular shape during cycling. Using a unimorph cantilever model, the Si coating layer actuation strain is estimated to be 30% at 100% SOC.

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