Дисертації з теми "Cu based cells"
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Fairbrother, Andrew. "Development of Cu(2)ZnSn(S,Se)(4) based solar cells." Doctoral thesis, Universitat de Barcelona, 2014. http://hdl.handle.net/10803/145615.
Повний текст джерелаEn los últimos años ha habido un rápido desarrollo en las tecnologías de celdas solares basadas en capa delgada, siendo hasta el momento los dispositivos basados en calcopiritas (Cu(In,Ga)Se2) los que han mostrado una mayor eficiencia de conversión fotovoltaica a escala de laboratorio. Sin embargo, y a pesar de tan prometedores resultados, existe una preocupación sobre la viabilidad a medio y largo término de estos materiales debido a la presencia en su composición de elementos relativamente escasos en la corteza terrestre, como son el In y el Ga. Esto ha llevado al desarrollo de tecnologías fotovoltaicas basadas en kesterita (Cu2ZnSn(S,Se)4), que es especialmente prometedora dada su gran similitud con la calcopirita. En este compuesto, el indio y el galio son reemplazados por elementos más abundantes como son el cinc y el estaño. Los valores de eficiencia de los dispositivos aún están por debajo de los del Cu(In,Ga)Se2, pero nuevas investigaciones y técnicas de desarrollo han llevado a importantes avances en los últimos años. A día de hoy, tanto los parámetros de fabricación como la estructura de los dispositivos basados en kesterita han seguido un camino prácticamente idéntico al de las tecnologías basadas en calcopiritas. El objetivo de esta tesis es el de profundizar en el desarrollo de las tecnologías basadas en kesterita, lo que cubre algunos de los retos básicos relacionados con ellas, como son la formación e identificación de fases secundarias o la optimización de las áreas de contacto frontal y posterior. Se ha puesto especial énfasis en la deposición y los procesos térmicos implicados en el crecimiento de este compuesto, y en ver cómo afectan a la posible formación de las fases secundarias y las propiedades del dispositivo. La tesis en sí está estructurada a partir de los diversos estudios publicados en revistas científicas. Dichos estudios incluyen una caracterización detallada por espectroscopia de dispersión Raman, difracción de rayos X, microscopia electrónica de barrido, y otras técnicas. Los puntos principales de este trabajo son: el desarrollo de un ataque químico selectivo para la eliminación del ZnS (una fase secundaria comúnmente presente en este sistema), con la consecuente mejora de las características del dispositivo; la elaboración de un método de sulfo-selenización para la formación de Cu2ZnSn(S,Se)4 a partir de precursores metálicos; y la resolución de cómo influyen los parámetros de los diferentes procesos térmicos en la formación y distribución de las fases.
Gouillart, Louis. "Development of ultrathin Cu(In,Ga)Se ₂ –based solar cells with reflective back contacts." Thesis, université Paris-Saclay, 2020. http://www.theses.fr/2020UPASS007.
Повний текст джерелаReducing the absorber thickness of thin-film photovoltaic devices is a promising way to improve their industrial competitiveness, thanks to a lower material usage and an increased throughput. It can also increase their efficiency due to a shorter pathway for the separation of photogenerated charge carriers. Still, the efficiency of ultrathin Cu(In,Ga)Se ₂ -based (CIGS) solar cells , which have an absorber thickness ≤500 nm that is approximately 5 times thinner than standard devices, is limited by two phenomena: the non-radiative recombination of charge carriers at the back contact and the incomplete absorption of the incident light. Several strategies were studied in order to mitigate those losses. First, the composition of ultrathin CIGS layers was optimized to create a grading of the semiconductor’s conduction band minimum. The resulting electric field contributes to a better charge carrier separation and a lower back contact recombination rate. The incorporation of silver in the CIGS composition greatly improved the performances of ultrathin cells, leading to an efficiency of 14.9% (540 nm of ACIGS, without antireflection coating), close to the current record of 15.2% (490 nm of CIGS, with antireflection coating). Besides, the addition of an alumina passivation layer at the interface between CIGS (470 nm) and Mo was also investigated, and resulted in an improvement of the open-circuit voltage of 55 mV. Second, a novel architecture of reflective back contacts was developed. It consists of a silver mirror that is encapsulated with layers of transparent conductive oxides. Based on a transmission electron microscopy study, this back contact was shown to be compatible with the co-evaporation of CIGS at 500°C or more. Thanks to a high reflectivity and an ohmic contact with CIGS, it led to an increase of the efficiency from 12.5% to 13.5% and of the short-circuit current from 26.2 mA/cm² to 28.9 mA/cm² as compared to cells with a standard molybdenum back contact. This reflective back contact paves the way toward higher photovoltaic efficiencies as well as novel strategies for further light trapping
Khanal, Rajendra R. "Carbon Single Wall Nanotubes: Low Barrier, Cu- Free Back Contact to CdTe Based Solar Cells." University of Toledo / OhioLINK, 2014. http://rave.ohiolink.edu/etdc/view?acc_num=toledo1396625969.
Повний текст джерелаPaire, Myriam. "Highly efficient solar cells in low dimensionality based on Cu(In,Ga)Se2 chalcopyrite materials." Paris 6, 2012. http://www.theses.fr/2012PA066439.
Повний текст джерелаIn this thesis we explored the potential of thin film microscale concentrator solar cells. The aim of the study is to develop a highly efficient photovoltaic technology, based on large-area processes for high throughput, and which is raw-material thrifty to meet the constraints of terawatt development. The miniaturization of thin film solar cells leads to a low resistive architecture, with easy thermal management, which is therefore adapted to the concentrating regime. The scale effects are studied from an analytical and numerical point of view. Prototype Cu(In,Ga)Se2 solar cells are fabricated with help of photolithography techniques and tested to evaluate the performance of the microcells. A 5% absolute efficiency increase was measured, which led to a 21. 3% efficiency of a 50 µm diameter microcell at a concentration of ×475. The influence of the incident spectra is highlighted. The specific features of the high illumination regime are studied for the first time on Cu(In,Ga)Se2. The photoconductive behavior of Cu(In,Ga)Se2 is analyzed. The screening of the electric field in the Cu(In,Ga)Se2 heterojunction under high light fluxes is evidenced by simulation and may explain the influence of the illumination level on the collection efficiency observed experimentally. The possibility of an industrial application is tackled via the fabrication of mesa delineated microcells, which proves that the edge surface of the microcells have a low recombination velocity (< 4 103 cm/s). A bottom-up approach is studied via electrodeposition. This selective deposition technique enables the synthesis of CuInSe2 on microelectrodes
Mollica, Fabien. "Optimization of ultra-thin Cu(In,Ga)Se2 based solar cells with alternative back-contacts." Thesis, Paris 6, 2016. http://www.theses.fr/2016PA066556/document.
Повний текст джерелаIn the past three years, record efficiency of Cu(In,Ga)Se2 (CIGS) based solar cells has improved from 20% up to 22.6%. These results show that CIGS absorber is ideal for thin-film solar cells, even if this technology could be more competitive with a lower manufacture cost. The fabrication of devices with thinner CIGS absorbers is a way to increase the throughput of a factory and to reduce material consumption. This PhD thesis aims to develop cells with a CIGS thickness below 500 nm instead of the conventional 2.0-2.5 µm. However, as reported in the literature, we observed a decrease in cell performance. We carefully analyzed this effect by the comparison between simulations and sample characterizations: it is attributed, on one hand, to a lack of light absorption in the CIGS layer and, on the other hand, to an increased impact of the back-contact (high recombination and low reflectivity). To resolve these problems, we demonstrated theoretically and experimentally that the use of an alternative back-contact, other than molybdenum, such as a transparent conducting oxide coupled with a light reflector, improves the cell efficiency. To achieve this result, an optimization of the CIGS deposition was necessary. Moreover, we proved that a porous oxide layer inserted between the CIGS and the back-contact limits the charge-carrier recombination and removes some parasitic resistance. Finally, an efficiency of 10.7% was achieved for a 480-nm-thick CIGS solar cell with a SnO2:F back-contact passivated with a porous Al2O3 layer
Wennerberg, Johan. "Design and Stability of Cu(In,Ga)Se2-Based Solar Cell Modules." Doctoral thesis, Uppsala universitet, Fasta tillståndets elektronik, 2002. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-1630.
Повний текст джерелаYu, Zhiqiang. "Transient Studies of Ni-, Cu-Based Electrocatalysts in CH4 Solid Oxide Fuel Cell." Akron, OH : University of Akron, 2007. http://rave.ohiolink.edu/etdc/view?acc%5Fnum=akron1194625466.
Повний текст джерела"December, 2007." Title from electronic dissertation title page (viewed 03/12/2008) Advisor, Steven S. C. Chuang; Committee members, Lu-Kwang Ju, Edward Evans, W. B. Arbuckle, Stephen Z. D. Cheng; Department Chair, Lu-Kwang Ju; Dean of the College, George K. Haritos; Dean of the Graduate School, George R. Newkome. Includes bibliographical references.
Platzer-Björkman, Charlotte. "Band Alignment Between ZnO-Based and Cu(In,Ga)Se2 Thin Films for High Efficiency Solar Cells." Doctoral thesis, Uppsala universitet, Fasta tillståndets elektronik, 2006. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-6263.
Повний текст джерелаJutteau, Sébastien. "Design, prototyping and characterization of micro-concentrated photovoltaic systems based on Cu(In,Ga) Se2 solar cells." Thesis, Paris 6, 2016. http://www.theses.fr/2016PA066666/document.
Повний текст джерелаIn this thesis, we studied the design, prototyping and characterization of micro-concentrated photovoltaic systems based on Cu(In,Ga)Se2 solar cells. The objective is to reduce the use of rare materials using the concentration of light, and benefit from the effect of miniaturization such as heat dissipation and lower resistive losses. First, the optical design of 1D and 2D concentrating systems based on spherical microlenses is presented. Using a ray-tracing software Zemax OpticStudio, we evaluated the best combination of elements, thickness and radii of curvature of the lenses, as well as the tolerances of fabrication and positioning of the system. An optical system of 1 mm thickness with a geometrical ratio of 100 and an angular tolerance of +/- 3.5° has been designed. Second, fabrication processes have been created and optimized to fabricate a 5x5 cm² prototypes with 2500 microcells. The best mini-module showed a concentration factor of 72x with an absolute increase of the efficiency of +1.6%. Third, numerical and experimental studies have been performed on concentrating systems based on Luminescent Solar Concentrators (LSC) and Compound Parabolic Concentrators (CPC). The LSC showed a low concentration factor and suffered from repeatability issues while the CPC is a very efficient solution but its specific geometry makes it difficult to fabricate at the micron scale. Finally, we developed a MATLAB code to estimate the producible energy of the designed systems, in order to evaluate the relevance of future technological choices that will be made
Platzer-Björkman, Charlotte. "Band alignment between ZnO-based and Cu(In,Ga)Se₂ thin films for high efficiency solar cells /." Uppsala : Acta Universitatis Upsaliensis : Universitetsbiblioteket [distributör], 2006. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-6263.
Повний текст джерелаHalbe, Ankush. "CHARACTERIZATION OF MICROSTRUCTURAL AND CHEMICAL FEATURES IN CU-IN-GA-SE-S-BASED THIN-FILM SOLAR CELLS." Master's thesis, University of Central Florida, 2006. http://digital.library.ucf.edu/cdm/ref/collection/ETD/id/2694.
Повний текст джерелаM.S.M.S.E.
Department of Mechanical, Materials and Aerospace Engineering;
Engineering and Computer Science
Materials Science and Engineering
Deibel, Carsten. "Defect spectroscopy on Cu(In, Ga)(S, Se)2-based heterojunction solar cells role of the damp heat treatment /." [S.l. : s.n.], 2002. http://deposit.ddb.de/cgi-bin/dokserv?idn=966279530.
Повний текст джерелаInsignares, Cristina. "Raman scattering based strategies for assessment of advanced chalcopyrite photovoltaic technologies: Characterisation of electrodeposited Cu(In,Ga)(S,Se)2 solar cells." Doctoral thesis, Universitat de Barcelona, 2015. http://hdl.handle.net/10803/384606.
Повний текст джерелаEl principal objetivo de esta tesis es el desarrollo de metodologías basadas en la espectroscopia Raman para el análisis de tecnologías fotovoltaicas Cu(In,Ga)(S,Se)2 avanzadas basadas en procesos electroquímicos, con la identificación y caracterización de parámetros relevantes para la eficiencia de las celdas solares y módulos. El trabajo desarrolla y propone metodologías y herramientas que pueden ser implementadas para aplicaciones de control de calidad y monitorización de procesos a nivel "on-line", contribuyendo a incrementar el rendimiento y la fiabilidad de los procesos involucrados en la fabricación de estos dispositivos. La tesis está estructurada en siete capítulos. El primer capítulo es una introducción a las tecnologías fotovoltaicas de la calcopirita, incluyendo las estrategias actuales de producción y su caracterización óptica por medio de técnicas basadas en espectroscopia Raman; más tarde en el capítulo se presenta la espectroscopia Raman como la técnica principal utilizada en el trabajo y se describe el enfoque abordado en la tesis para el desarrollo de técnicas para la monitorización de los procesos. Los espectros Raman permiten obtener información de parámetros estructurales y químico-físicos de las diferentes capas en la estructura que determinan la eficiencia del dispositivo, como la calidad cristalina y presencia de defectos, composición química, estrés y presencia de fases secundarias. El Segundo capítulo describe los sistemas experimentales que se han desarrollado en el trabajo, y las condiciones experimentales determinadas para garantizar la fiabilidad de las medidas. Una descripción más detallada de la aplicación de la espectroscopia Raman se describe en los siguientes capítulos, que abordan la detección de fases secundarias en la capa del absorbedor que son relevantes para la eficiencia de la celda en dispositivos de alta eficiencia (Capítulo 3), la caracterización química de la región superficial de las capas absorbedoras (Capítulo 4), el espesor de las capa buffer de CdS (capítulo 5) y la conductividad eléctrica de las capas ventana (capítulo 6). El último capítulo de la tesis resume las principales conclusiones del trabajo.
Haug, Annegret Veronika [Verfasser], and H. [Akademischer Betreuer] Kalt. "Properties of the Back Contact Interface for Non-Vacuum Deposited Precursor-Based Cu(In,Ga)Se₂ Solar Cells / Annegret Veronika Haug ; Betreuer: H. Kalt." Karlsruhe : KIT-Bibliothek, 2018. http://d-nb.info/1155474317/34.
Повний текст джерелаHauschild, Dirk [Verfasser], and Friedrich Theodor [Gutachter] Reinert. "Electron and soft x-ray spectroscopy of indium sulfide buffer layers and the interfaces in Cu(In,Ga)(S,Se)2-based thin-film solar cells / Dirk Hauschild. Gutachter: Friedrich Theodor Reinert." Würzburg : Universität Würzburg, 2016. http://d-nb.info/1111784574/34.
Повний текст джерелаWennerberg, Johan. "Design and stability of Cu(In, Ga)Se₂-based solar cell modules /." Uppsala : Acta Universitatis Upsaliensis : Univ.-bibl. [distributör], 2002. http://publications.uu.se/theses/91-554-5214-0/.
Повний текст джерелаPosada, Parra Jorge Ivan. "Optimisation d'un procédé hybride de co-pulvérisation/évaporation pour l'obtention de cellules solaires à base de Cu(In,Ga)Se2." Thesis, Paris 6, 2015. http://www.theses.fr/2015PA066057/document.
Повний текст джерелаCu(In,Ga)Se2 (CIGS) thin film solar cells are a very promising technology for high efficiency energy conversion. Several techniques are used to synthesize CIGS absorbers. Magnetron reactive sputtering is an attractive deposition technique for depositing CIGS absorbers because of its potential for providing uniform coatings over large areas, thus offering the possibility for more competitive industrial scale-up. The objective of this work is to develop and optimize a hybrid alternative co-sputtering/evaporation CIGS deposition process. To meet this goal, various studies have been conducted to ensure control of the various deposition parameters. Initially, plasma was studied with Optical Emission Spectroscopy in order to establish correlations between plasma species and thin film composition, structure and morphology. This has allowed to establish in-situ calibration curves for monitoring the deposited layers composition and their homogeneity, and to determine the existence of different sputtering modes, linked to the selenium evaporation temperature. Then, different CIGS absorbers were synthesized with the stabilized hybrid process. These absorbers were deposited in one and three stages to analyze the influence of composition gradients on their morphological, structural and optoelectronic properties. A CIGS absorber giving a maximum conversion efficiency of 10.4 % was fabricated with a one step process. A 9.3 % efficiency solar cell was obtained with a three-stage deposition process
Hildebrandt, Thibaud. "Optimisation des interfaces absorbeur/couche tampon/fenêtre avant dans les cellules solaires à base de Cu(In,Ga)Se2." Thesis, Paris 6, 2014. http://www.theses.fr/2014PA066720.
Повний текст джерелаThe replacement of CdS-based buffer layer in Cu(In,Ga)Se2 solar cells has been one of the main challenges of the research community for the last decade. Today, one of the most promising alternative material is the chemically bath deposited Zn(S,O,OH). Because of its low deposition rate and of metastable behavior, it becomes necessary to proceed to an optimization of experimental conditions and of the various interfaces. The first part of this work has been dedicated to the optimization of the deposition bath thanks to the introduction of new additives. It has been possible to underline the additive effects on both the deposition rate and on the chemical composition of the deposited layers. The second part of this work has been dedicated to the optimization of the (Zn,Mg)O/ZnO:Al window layer. Thanks to an improvement of the sputtering conditions, it has been possible to reduce metastability of the solar cells, and to limit sodium migration up to the Zn(S,O,OH) layer. These optimized conditions combined to the variation of the CIGSe surface composition have allowed us to outperform CdS-based references solar cells
Handick, Evelyn [Verfasser], Marcus [Akademischer Betreuer] Bär, Dieter [Akademischer Betreuer] Schmeißer та Bernd [Akademischer Betreuer] Rech. "Surface and interface characterization by X-ray and electron spectroscopies - revealing the peculiarities of Cu(In,Ga)Se₂ chalcopyrite and CH₃NH₃PbI(₃-ᵪ)Clᵪ perovskite-based thin film solar cell structures / Evelyn Handick ; Marcus Bär, Dieter Schmeißer, Bernd Rech". Cottbus : BTU Cottbus - Senftenberg, 2017. http://d-nb.info/113690445X/34.
Повний текст джерелаBabych, Kateryna. "Deciphering the effects of metal-based drugs on cell signaling pathways in cancer cells." Master's thesis, 2019. http://hdl.handle.net/10400.1/13998.
Повний текст джерелаO termo „cancro‟ abrange um largo número de doenças, que são caracterizadas pelo desenvolvimento anormal de células que se dividem, crescem e propagam-se de forma descontrolada por todo o organismo, propagando-se através do sangue ou dos vasos linfáticos para os tecidos vizinhos. A quimioterapia é um tipo de tratamento anticancerígeno, que tem por base o uso de fármacos que atuam por parar ou por diminuir o crescimento de células cancerígenas, células que se dividem anormalmente causando tumores. Na maioria dos casos, ao prescrever um fármaco específico, o uso combinado de dois ou mais fármacos é preferencial, sendo que não deve haver nenhum tipo de interação entre os mesmos, quer no mecanismo de ação e/ou metabolismo, quer na eliminação. A segunda e a terceira geração de fármacos existentes, mostraram um aumento da bioatividade contra o cancro, contudo, os efeitos secundários continuam a ser uma grande preocupação. Estudos recentes têm demonstrado um interesse significativo em fármacos com compostos metálicos, sendo que alguns destes fármacos já são usados como agentes antitumorais, com eficácia e menos efeitos secundários comprovados, comparativamente com outros fármacos. O Cobre (II), tanto como metal, tanto complexado com vários compostos orgânicos, mostrou ter atividade citotóxica a baixas concentrações. O objetivo desde trabalho é analisar, em linhas celulares humanas, os efeitos de complexos de cobre recentemente sintetizados, tanto em termos de citotoxicidade como em termos de mecanismo de ação. Neste trabalho de investigação, dois compostos com base no cobre (II), (cobre(II)-tropolone) e cobra(II)-hinokitiol complexos), foram observados e avaliados quanto às suas propriedade citotóxicas, e testados na linha celular humana de cancro da mama MCF7 e MDA-MB-231, quanto ao seu efeito na viabilidade, no stress oxidativo, na apoptose e na interação com o DNA. Adicionalmente, como modelo para estudos in vivo, foi conduzido um teste modelo 3D quanto à viabilidade, onde foram observados resultados positivos contra a linha celular MCF7 sobrevivente. Simultaneamente, foi realizada uma análise comparativa dos complexos sintetizados, dos seus ligandos e do sal de cobre. Estes compostos mostraram resultados promissores com efeitos potenciais como fármacos antitumorais.
Chang, Wei-En, and 張瑋恩. "Characterization of Electrodes for Cu(In,Ga)Se2-based solar cells." Thesis, 2009. http://ndltd.ncl.edu.tw/handle/22268750716232241790.
Повний текст джерела國立東華大學
電機工程學系
97
The electrodes for the Cu(In,Ga)Se2-based solar cells were deposited on the glass substrates by the direct-current magnetron sputtering method in this thesis. The correlations between the sputtering parameters and properties of the deposited films were studied by characterizing the electrical, optical, crystallinity, morphology, and compositional properties. Aluminum-doped zinc oxide films of the front electrodes for the Cu(In,Ga)Se2-based solar cells were deposited on corning 1737 glass substrates with a ZnO/Al2O3 target (Al2O3 2wt.%). The dependences of the carrier concentration, carrier mobility, transmittance, crystallinity, grain size, film stress, surface morphology, and composition of the films on the working voltage, working pressure, substrate temperature, working power, substrate-bias, film thickness, target-substrate distance, and O2/Ar flow ratio were investigated, respectively. The properties of as-deposited aluminum-doped zinc oxide films were analyzed by using the Hall-effect Measurement, UV-VIS Spectrophotometer, X-ray Diffraction, Field Emission Scanning Electron Microscopy, and Energy Dispersive Spectrometer Spectrophotometry. The optimal transparent conductive aluminum-doped zinc oxide films were prepared with a target-substrate distance of 3.5cm, substrate temperature of 200℃, sputtering power of 300W, working pressure of 3m torr, and Ar flux rate of 50 sccm, resulting in the film thickness of 462.5 nm, optical transmittance up to 91.36% in the visible range, and electrical resistivity of down to 7.05 Ω-cm. The back electrodes of molybdenum films were deposited on the soda-lime glass substrates with a molybdenum target (3N5). Both the low resistivity and good adhesion of as-deposited Mo films were obtained by varying the sputtering parameters. The high-quality aluminum-doped zinc oxide and molybdenum films were achieved for the front and back contacts of Cu(In,Ga)Se2-based solar cells, respectively.
"Buffer layers for Cu(In,Ga)Se2 based thin film solar cell." 2014. http://library.cuhk.edu.hk/record=b6115709.
Повний текст джерела基於本實驗室在生長高質量銅銦鎵硒吸收層的先進技術,本工作重點研究了位於吸收層和透明窗口層之間的緩衝層和高阻窗口層。 這兩層的常規結構是由化學水浴法生長的硫化鎘層和本征氧化鋅層組成。 本論文的第一部分是關於這種常規結構的參數優化。 經過優化,本實驗室實現了在小型組件(總面積60 平方釐米)上15.6%的最高轉換效率。
本論文的第二部分關於用化學水浴法生長緩衝層。 我們發展了一種新型生長制備,用於避免氣泡和孔洞在吸收層表面的形成。 表面形貌測試結果顯示,使用此種設備生長的緩衝層能均勻的覆蓋銅銦鎵硒吸收層的表面。 其它硫化鎘的生長參數也根據新設備的特點進行了優化。 優化結果顯示,在空間電荷區的復合對電池轉換效率影響較大,而這種復合損失可以經過調整緩衝層與吸收能之間能帶結構得到減少。 我們研究了另外一種用化學水浴法生長的緩衝層:硫化鋅。 硫化鋅是一種無毒的寬禁帶材料,在短波部分有較少的光吸收。因此,它是一種很好的硫化鎘替代物。 我們研究了在不同生長溫度下的生長動力學機制。 最優的生長溫度是95 攝氏度。 經過生長結束後的退火過程,硫化鋅的禁帶寬度由3.61eV 下降到3.2eV。 再經過在氧氣環境中的退火,禁帶寬度可由3.2eV 繼續下降到2.9eV。 在單結電池中,硫化鋅的最優厚度在43 納米到62 納米之間。 在此厚度範圍中,具有硫化鋅緩衝層的電池實現了相對於具有硫化鎘緩衝層的電池更高的轉換效率。硫化鋅電池實現了與硫化鎘電池相近的開路電壓。 此項改進主要是由於在高溫條件下生長的硫化鋅與銅銦鎵硒層形成了更合適的能帶結構。
本論文的第三部分是關於用共濺射的方法生長鋅鎂氧化物緩衝層。 實驗結果顯示,鋅鎂氧化物的晶體結構和禁帶寬度與鎂含量相關。 當鎂含量小於0.4 時,鋅鎂氧化物具有(002)從優方位的纖鋅礦結構。 晶體質量隨鎂含量的增加而降低,同時,鋅鎂氧化物的禁帶寬度隨鎂含量的增加線性增加。 對於濺射方法生長的緩衝層,吸收層的表面鈍化對提高轉化效率非常重要。
本論文的最後一部分是關於高阻窗口層的研究。 相比於由本征氧化鋅構成的高阻窗口層,由鋅鎂氧化物構成的高阻窗口層能使電池有更優的穩定性。對於單結電池,本層的最優厚度是50 納米。對於小型組件,最優厚度在100 納米左右。 關於鎂的最優組分,結果仍爭議,但可以確定的是由較高濺射功率(大於2.2 瓦每平方釐米)產生的濺射損傷是應當盡量避免的。關於光照產生的亞穩定性的研究表明,亞穩定性強度與濺射環境中的氧氣含量正相關。 相對於無氧氣摻雜的電池,通過將1%的氧氣摻入氬氣濺射環境中,電池效率提高了0.5 個百分點。
Cu(In,Ga)Se2 (CIGS)-based thin film solar cells have been regarded as a promising technology for cheap and environmentally friendly electricity generation. CIGS based solar cell has achieved 20.9% conversion effciency, while the offcial record for multicrystalline Silicon solar cell is 20.4%. A series of improvements have lead to this record for thin film based solar cell. An important improvement originated from the replacement of 1- to 2-um-thick doped (Cd,Zn)S layer by a thin, undoped CdS and a transparent conductive oxide(TCO).
Based on our techniques on growing high quality CIGS absorber layer, this work focuses on further optimization of buffer layer and high resistance window layer located between the CIGS absorber and the TCO window layer. The standard buffer structure includes a chemical-bath-deposited CdS layer and an intrinsic ZnO layer. The first part of this thesis is about optimization of this standard structure carried out in our laboratory. The best conversion effciency achieved on mini-module with total area of 60 cm² is 15.6 %.
The second part is about the fabrication of alternative buffer layers by chemical bath deposition. New deposition equipment has been invented to eliminate stationary bubbles and uncovered pinholes on absorber surface in the deposition of CBD CdS. Surface morphology studies shown that the buffer layer grown by this equipment has uniform coverage on the CIGS surface. Other deposition parameters in the chemical bath deposition of CdS buffer layer have been systematically studied employing this new equipment. Our results suggest that the detrimental effect of recombination in SCR region can be mitigated by proper band alignment in the buffer/absorber interface.
Another buffer layer grown by CBD method is ZnS. Because the wider bandgap and less light absorption in short wavelength range, ZnS is a good candidate to replace the toxic CdS buffer layer. The growth kinetics under different deposition temperature have been studied. The optimal temperature profile has been achieved by setting temperature at 95°C. The results of post annealing after deposition indicate that the bandgap energy of CBD ZnS decreases from 3.61 eV to 3.2 eV by annealing in vacuum. A further decrease from 3.2 eV to 2.9 eV could be caused by annealing with oxygen gas. The optimum thickness of ZnS used in single solar cells is between 43nm and 62nm. In this range, devices with CBD-ZnS buffer layer have achieved higher conversion effciency than CBD-CdS buffer layer solar cell. The open circuit voltage for ZnS-buffer devices has approached the value with CdS-buffer. The improvement is mainly due to proper band alignment of ZnS/CIGS interface achieved under high deposition temperature of CBD process.
The third part of this thesis is to study how to deposit (Zn,Mg)O buffer layers by co-sputtering method. It was found that the crystalline structure and optical bandgap of sputtered (Zn,Mg)O varies with Mg concentration. (Zn,Mg)O thin films with Mg concentration less than 0.4 have preferential orientation with a wurtzite phase (002). The crystal quality decreases with increasing Mg concentration and the band gap of the (Zn,Mg)O films has a linear relationship with the Mg concentration in this range. An interesting finding to emerge from this study is that oxygen passivation of absorber surface is critical to improve device performance with (Zn,Mg)O buffer layer deposited by sputtering method.
The last chapter assesses the effect of replacing high resistance window layer with (Zn,Mg)O in devices with CBD-ZnS buffer layer. Compared to devices with i-ZnO (high-resistance window) HRW layer, better device stability has been confirmed on solar cells with (Zn,Mg)O HRW layer. For single cells, the optimum thickness of HRW layer is about 50 nm, and the optimum thickness for mini-modules is around 100nm. Although no conclusion can be drawn with the optimum Mg concentration, the sputtering damage caused by sputtering power density higher than 2.2 W/cm² should be avoided. It was also shown that the metastability effect activated by illumination has positive correlation with the number of energetic oxygen ions in sputtering process. Compared to devices without oxygen doping, a higher effciency (increase of 0.5 % unit) has been achieved by the oxygen/argon doping ratio of 1 %.
Detailed summary in vernacular field only.
Detailed summary in vernacular field only.
Detailed summary in vernacular field only.
Detailed summary in vernacular field only.
Detailed summary in vernacular field only.
Zhu, Jiakuan = 基於銅銦鎵硒薄膜太陽能電池的緩衝層結構研究 / 朱家寬.
Thesis (Ph.D.) Chinese University of Hong Kong, 2014.
Includes bibliographical references (leaves 121-134).
Abstracts also in Chinese.
Zhu, Jiakuan = Ji yu tong yin jia xi bo mo tai yang neng dian chi de huan chong ceng jie gou yan jiu / Zhu Jiakuan.
Teixeira, Jennifer Cláudia Passos. "Optoelectronic study of Thin Film Solar Cells Based on Chalcogenide." Doctoral thesis, 2019. http://hdl.handle.net/10773/27750.
Повний текст джерелаNesta tese, foi estudado o papel dos defeitos nas propriedades optoelectrónicas de dois materiais com grande potencial para aplicações fotovoltaicas, Cu2ZnSnS4 (CZTS) e Cu(In, Ga)Se2 (CIGS). Ambos os materiais são fortemente dopados e compensados, sendo que as suas propriedades optoelectrónicas são governadas pelas suas estruturas de níveis eletrónicos complexas. No sentido de melhor compreender o impacto da estrutura eletrónica no desempenho das células solares, diferentes estudos foram realizados utilizando principalmente a técnica de fotoluminescência, complementada com análise morfológica, estrutural e elétrica. Para as células solares baseadas em CZTS, foram estudadas três séries de amostras para as quais o impacto i) do tempo da temperatura máxima de sulfurização, ii) do método de sulfurização, iii) do tratamento térmico após a deposição, foi avaliado nas propriedades optoelectrónicas da camada CZTS. Para o CIGS, três tópicos principais foram abordados, i) células solares com arquitetura convencional, ii) células solares para as quais se exploram novas arquiteturas, iii) influência dos defeitos no desempenho das células solares a partir da comparação de modelos teóricos com resultados experimentais. A influência das flutuações de potencial foi evidenciada, sendo que a luminescência obtida, tanto envolvendo o CZTS como o CIGS, foi completamente explicada a partir de modelos de recombinação que envolvem a presença destas flutuações. Os estudos óticos desenvolvidos no âmbito das células solares de CZTS revelaram um grande impacto de mecanismos não radiativos e de recombinação envolvendo defeitos profundos que se relacionam com um fraco desempenho dos dispositivos estudados. Para diferentes séries de amostras de células solares baseadas em CIGS foi obtida uma correlação entre a influência das flutuações de potencial e desempenho dos dispositivos estudados. Os resultados óticos obtidos para CIGS revelaram dois mecanismos principais de desexcitação dos canais radiativos envolvendo aglomerados de dadores pouco profundos e o defeito aceitador VCu. A partir das análises teórica e experimental de células solares de CIGS, obtevese uma maior correlação entre a influência das flutuações de potencial electroestáticas com as perdas de tensão de circuito aberto, do que aquela observada para as flutuações de hiato. Finalmente, foi demonstrada a influência das flutuações de potencial na tecnologia CIGS à temperatura ambiente. Nesta tese, foi mostrado que as propriedades optoelectrónicas do CZTS e CIGS são consistentes com a existência de flutuações de potencial, sendo que o seu impacto no desempenho das células solares é significativamente diferente em cada uma das tecnologias. Enquanto no CZTS os mecanismos de recombinação aparecem como um problema com um impacto no desempenho das células solares mais significativo que as flutuações de potencial, no CIGS uma correlação entre a influência das flutuações de potencial e o desempenho das células solares é notória.
The author acknowledge the financial support of the project UID/CTM/50025/2019, and IF/00133/2015/CP1325/CT0001 from the FCT.
Programa Doutoral em Física
Akhavan, Vahid Atar. "Photovoltaic devices based on Cu(In1-xGax)Se2 nanocrystal inks." Thesis, 2011. http://hdl.handle.net/2152/ETD-UT-2011-08-4285.
Повний текст джерелаtext
Ntholeng, Nthabiseng. "Synthesis and characterization of Cu-based telluride semiconductor materials for application in photovoltaic cells." Thesis, 2017. http://hdl.handle.net/10539/23532.
Повний текст джерелаThe colloidal method has extensively been used to synthesize ternary and quaternary copper sulfides and selenides. Although tellurides form part of the chalcogenides, little has been reported on them particularly the synthesis of these nanostructures. Achieving high-quality nanocrystals through colloidal synthesis requires thorough monitoring of parameters such as time, solvent, precursor as they affect nucleation and growth of the nanocrystals. Herein, we report on the colloidal synthesis of ternary CuInTe2 and quaternary CuIn1-xGaxTe2 nanostructured semiconductor materials. A typical synthesis of CuInTe2 entailed varying reaction temperature. At temperatures below 250 °C, no formation of CuInTe2 was seen. At 250 °C formation of CuInTe2 could be observed with the formation of binary impurities. A change in the sequence in which precursors were added at 250 °C yielded pure CuInTe2. Applying different surfactants aided in achieving differently structured morphologies of CuInTe2 nanocrystals. Morphology varied from rods, cubes, nanosheets etc. Different morphologies resulted in different optical properties with the high optical band gap of 1.22 eV measured for 1D rods. Different precursors were employed in the synthesis of quaternary CuIn1-xGaxTe2. Precursor 2 (entailed the use of Cu (acac)2, In (acac)3 and Ga(acac)3) yielded pure CuIn1-xGaxTe2 phase with no formation of impurities. Variation in reaction time influenced the optical properties of the quaternary CuIn1-xGaxTe2 with high band gap obtained at low reaction time (30 min). A change in Ga and In concentration resulted in reduced lattice parameters a and c with lowest values obtained with the highest Ga concentration. However, achieving the intended concentration proved challenging due to the loss of the material during synthesis. Increasing the Ga concentration resulted in a high optical band gap. Conducting the reaction with Hexadecylamine (HDA) resulted in a relatively high optical band though the formation of impurities was evident. The obtained band gap can be attributed to small sized particles as evident from TEM results. Heterojunction ZnO/CIT and ZnO/CIGT solar cell devices were fabricated through a simple solution approach. The performance of ZnO/CIGT device was superior to that of ZnO/CIT in which efficiency increased from 0.26-0.78%. In the ZnO/CIT device, high Voc of 880 mV was recorded while 573.66 mV was measured for ZnO/CIGT device. Chemical and thermal treatments were performed on the ZnO/CIGT devices. The efficiency increased from 0.78 1.25% when the device was chemically treated with a short-chain EDT ligand. A high conversion efficiency of 2.14% was recorded for devices annealed at 300 °C. High annealing temperatures resulted in poor device performance with the lowest efficiency of 0.089% obtained at annealing temperatures of 500 °C attributed to the leaching out of In and Ga into the ZnO layer.
LG2017
"Design of rapid thermal processing system for Cu(In,Ga)Se₂-based solar cells." 2009. http://library.cuhk.edu.hk/record=b5894108.
Повний текст джерелаThesis (M.Phil.)--Chinese University of Hong Kong, 2009.
Includes bibliographical references (p. 87-91).
Abstract also in Chinese.
Yang, Shihang = Tong yin jia xi tai yang neng dian chi zhong bai guang tui huo xi tong de she ji / Yang Shihang.
Chapter 1 --- Introduction to Photovoltaics --- p.1
Chapter 1.1 --- "Developments, markets and forecasts" --- p.1
Chapter 1.2 --- The physics of solar cells --- p.2
Chapter 1.2.1 --- Light Absorption --- p.2
Chapter 1.2.2 --- Charge Carrier Separation --- p.6
Chapter 1.2.3 --- Solar Cell I-V Characteristics --- p.7
Chapter 1.3 --- Classifications of Solar Cells --- p.10
Chapter 1.3.1 --- Crystalline silicon solar cell --- p.10
Chapter 1.3.2 --- Thin film solar cells --- p.12
Chapter 1.3.3 --- Organic and polymer solar cells --- p.12
Chapter 1.4 --- "Cu(In,Ga)Se2 Solar Cells" --- p.13
Chapter 1.4.1 --- State of the art --- p.13
Chapter 1.4.2 --- Material properties --- p.14
Chapter 1.4.3 --- Basic processing steps --- p.15
Chapter 2 --- Equipment design --- p.24
Chapter 2.1 --- System design concepts --- p.24
Chapter 2.2 --- Sample transfer chamber --- p.26
Chapter 2.3 --- Co-evaporation chamber --- p.28
Chapter 2.3.1 --- Load-lock chamber --- p.28
Chapter 2.3.2 --- Co-evaporation chamber --- p.31
Chapter 2.4 --- Sputtering chambers --- p.34
Chapter 2.4.1 --- Mo sputtering chamber --- p.34
Chapter 2.4.2 --- Three targets sputtering chamber --- p.36
Chapter 2.5 --- Other chambers --- p.38
Chapter 3 --- Design of Rapid Thermal Processing System --- p.42
Chapter 3.1 --- Introduction to RTP --- p.42
Chapter 3.1.1 --- History and current status of RTP --- p.42
Chapter 3.1.2 --- Advantages of RTP system compared to conventional furnaces --- p.45
Chapter 3.2 --- Computational simulation for RTP system design --- p.47
Chapter 3.2.1 --- Introduction to Ansys Fluent --- p.47
Chapter 3.2.2 --- Model setup steps --- p.54
Chapter 3.2.3 --- Physical principles --- p.57
Chapter 3.2.4 --- Models setup and comparisons --- p.62
Chapter 3.3 --- Rapid thermal processing system --- p.76
Chapter 3.3.1 --- Se deposition chamber --- p.76
Chapter 3.3.2 --- Quartz chamber --- p.78
Chapter 3.3.3 --- Lamp frame --- p.79
Chapter 4 --- Conclusions --- p.83
Chapter 4.1 --- RTP heater design --- p.83
Chapter 4.2 --- Future prospect --- p.83
Bibliography --- p.87
LIU, YING-CHEN, and 劉瀅溱. "Efficiency Enhancement of Ink-based Cu(In,Ga)Se2 Solar Cells via Indium Incorporation." Thesis, 2013. http://ndltd.ncl.edu.tw/handle/72767116371821321664.
Повний текст джерелаHsu, Chhia-Hao, and 許家豪. "Fabrication of Cu(In, Ga)Se2-based solar cells by sputtering from a quaternary target." Thesis, 2011. http://ndltd.ncl.edu.tw/handle/87601440972053334413.
Повний текст джерела國立清華大學
材料科學工程學系
99
Cu(In , Ga ) Se2 (CIGS)-based solar cell is one of the most promising candidates for future photo-voltaic application. In this thesis, we developed a one-step sputtering process from a single quaternary target. This straightforward process might be suitable for large-area application in industry. In this work, CIGS thin films were fabricated by sputtering from a single target at elevated temperature without additional selenium supply. Both film properties and device properties were investigated. Two targets with different composition were studied, namely, one copper-poor target and one copper-rich target. In the study concerning copper-poor target, we found that grain boundary passivation was quite critical. Hence, additional efforts were put into sodium incorporation. For the copper-rich target, the efficiency of 6\% was achieved. However, high carrier concentration and high copper concentration might limit the device performance. For the copper-poor target, the conversion efficiency was increased from 0.2\% to over 7.5\% by controlling sodium composition.
Goud, Siva Charan Bache. "Edible Battery Design for Bio-Medical applications." Thesis, 2022. https://etd.iisc.ac.in/handle/2005/5969.
Повний текст джерелаLin, Tzung-Sheng, and 林宗聖. "Fluorescence and Magnetic Resonance Based Contrast Agent for Detection of Cu(II) ion in Living Cells." Thesis, 2010. http://ndltd.ncl.edu.tw/handle/22511134088753198134.
Повний текст джерела國立交通大學
生物科技學系
98
Over the past few decades, increasing attention has been paid to synthesize contrast agent for magnetic resonance imaging (MRI). MRI is a non-invasive and high resolution technique that has become a powerful diagnostic tool in medicine. In this study, we designed and synthesized a tryptophan based contrast agent (4S)-4-indolyl-3,6,10-tri(carboxymethyl) -3,6,10-triazadodecanedioic acid (Try-TTDA) and its Gd(III) chelate ([Gd(Try-TTDA)]2?{) that can recognize Cu2+ ion in the living cells. Moreover, the Gd3+ complex attributes excellent selectivity for Cu2+ over a choice of other metal ions. The interaction between Cu2+ and side chain indole of [Gd(Try-TTDA)]2?{ was quenching of intrinsic tryptophan fluorescence. A gradual increases in the relaxivity and signal enhancement of ex-vitro and in vitro MR imaging upon Cu2+ detection. These results implicate that a new MR based contrast agent can serve as a Cu2+ sensor using fluorescence spectrophotometer and MR imaging.
Alex, Sherine. "Development of Cu-based Intermetallic Reflector Materials for Concentrated Solar Power Application." Thesis, 2017. https://etd.iisc.ac.in/handle/2005/4277.
Повний текст джерелаTing, Yu-Ting, and 丁于庭. "Study of segregative behavior for Gallium in Cu(In1-x,Gax)Se2 based thin film solar cells." Thesis, 2013. http://ndltd.ncl.edu.tw/handle/vp39k6.
Повний текст джерела國立臺北科技大學
製造科技研究所
101
In this research, the tranditional two stage process was utilized to fabricate CIGS absorber.In the two stage process, CIGSe films are prepared by selenization of CuInGa (CIG) metallic percursors that CIG precursors are subjected to get diffused with Se vapor. However, In atoms might migrate toward the surface with higher Se concentration during selenization because of chemical affinity of In-Se and Ga-Se. the result would contribute to the accumulation of Ga atoms, causing detrimental influences such as Ga segregation or CuInSe2 and CuGaSe2 phase separation and further affect PV performance of CIGSe solar cells. In this study, we thus prepared the CIG precursors with various Cu/(In+Ga) ratio by sequential sputtering of In and Cu3Ga targets in DC sputtering system, followed by selenization process. In addition, we also investigated the effect of Ga segregation on the micro-structural and electro-optical characteristics on CIGS thin films. The results indicate that the crystalline size in the morphology observation continue to extend with an increase in Cu/(In+Ga) compositional ratio. Moreover, the single phase chalcopyrite CuIn0.7Ga0.3Se2 is predominant in the XRD and Raman results. The phenomenon of apparently Ga segregation can also be observed. After TEM analysis, the phase on the bottom of films shows CuGaSe2. The observation of Ga segregation and elemental distribution is clarified using EMPA and AES as well. In the section of electro-optical characteristicsof CIGSe thin films, all the CIGSe thin film we prepared reveal P-type conductivity. The carrier contentration would alter from1015-1018 cm-3 with varied Cu/(In+Ga) composition ratio. According to result the by extrapolating the slope of the α2(hν) curve and the abscissa, Band gap (Eg) can enhance with an increase in Ga content. However, the In atoms in chalcopyrite structure can not be substituted by Ga efficiently, the trend of extending Eg would be presented apparently. In this case, we utilized sulfurization process to improve the uniformity and Ga segregation throughout the films. In addition, we investigated the effects of temperature and duration on the characteristics like morphology, structure, and photoelectric property of CIGSeS thin films during sulfurization. The results indicate the influence of S incorporation do exert effect on the homogenization of CIGSeS thin films that can improve uniformity and segregation. The open-circuit voltage (Voc) and Band gap (Eg) would be enhanced, resulting in extending the conversional efficiency.
Zhung, Tang-Xuan, and 鍾堂軒. "Utilizing reactive sputtering and MO-sputtering prepare the absorber of Cu-III-VI2-based thin film solar cells." Thesis, 2001. http://ndltd.ncl.edu.tw/handle/16715584959038046063.
Повний текст джерела國立清華大學
電子工程研究所
89
Cu-III-VI2 ternary compound semiconductor is one of the most promising materials for thin film photovoltalic devices, especially solar cells, due to the suitability of its band gap and its high absorption coefficient. Recently, the National Renewable Energy Laboratory (NREL) has reported that the total-area efficiency of the solar cell based on Cu(In,Ga)(Se,S)2 has reached 18.8% ,growing by 3-stage evaporation method. Martin A. Green indicated in his book that the efficiency of a tandem solar cell with three-layer structures, in which energy gaps are 1.0eV, 1.6eV, and 2,2 eV, respectively, could reach 35%. This could be reached by Cu-III-VI2 material due to its band gap can be varied from 1 to 3.5eV by composition control. Therefore, how to develop a suitable industry technique to produce a large area, uniform, high throughput, and inexpensive Cu-III-VI2- based solar cell is very important in 21th’s century. In order to develop a suitable industry technology to prepare the absorber of Cu-III-IV2-based solar cells, we choose the sputtering method as our experimental method. In our experiments, reactive sputtering method with different CuIn alloy targets was utilized to prepare the CuInS2 films. We prepared CuInS2 thin films under different process conditions such as substrate temperatures, RF power, Ar and H2S flow rates. Generally, Cu-rich films we prepared have good crystalline quality and low resitivity. But, it also limed by it rough surface and the problem resulting from surface secondary phases. In-rich films we prepared have smooth surface morphology, but it also suffer from low carrier mobility and smaller grain size. Near-stoichiometric films could be prepared by utilizing a target with Cu/In=0.95 at atomic percentage. The best process condition occurred at a small H2S flow rate ( <=7.5 sccm) and a temperature of 400 °C. In this condition, the films have good crystal quality without surface secordary phases. To control the composition of the films, futher, we also try to add a negative bias to the Mo-coated glass. Although the details of the bias sputtering are not always clearly understood, there is a little doubt that the weak-bounded species grown on the surface of the films may be resputtered due to a low-energy ion bombardment. Increasing the magnitude of the negative bias results that the Cu/In become smaller than 1 and the surface become more smooth. Besides preparing CuInS2 by the reactive sputtering method, we also developed a new technology, named MO-sputtering process, which added a small amount of metal-organic gas during sputtering process to solve the disadvantages that composition control is difficult in the sputtering process using an alloy target. TMGa has been utilized as our metal organic source to prepare Cu(In,Ga)S2 thin films. We have prove that the mo-sputtering can be developed as a new technique to prepare Cu-III-VI2 solar cells.
Wei, Ling-fang, and 魏翎芳. "Highly Selective Flourorescent Sensors for Thiols and Cu (II) ion Based on Coumarin and Their Applications in Living Cells." Thesis, 2015. http://ndltd.ncl.edu.tw/handle/mrjv6g.
Повний текст джерела國立交通大學
應用化學系碩博士班
103
In this thesis, coumarin was used as a signal unit for chemosensors AC and PHC. Chemosensor AC indicates the presence of cysteine and homocysteine among other amino acids with high selectivity by a significant blue emission. Chemosensor AC displays good sensitivity in buffer solution at the pH value 6.0 to 9.0. The detection limits of AC for cysteine and homocysteine are 65 and 78 nM, respectively. In addition, chemosensor AC can be used as a fluorescent probe for detecting cysteine and homocysteine in living cells. Chemosensor PHC indicates the presence of copper ions among other amino acids with high selectivity by a significant blue emission. The detection limit of PHC for Cu (II) is 8 nM. In addition, chemosensor PHC can be used as a fluorescent probe for detecting Cu (II) in living cells.
Lin, Yu-Chien, and 林雨芊. "Study of Electric Conductivity, Temperature Sensing, and Catalytic Effect of Cu-Based Materials for Anode of Solid Oxide Fuel Cells." Thesis, 2018. http://ndltd.ncl.edu.tw/handle/qcuk7n.
Повний текст джерела國立臺灣大學
材料科學與工程學研究所
106
Carbon deposition and catalytic ability of anodes are two important issues when using hydro-carbon fuels for solid oxide fuel cells. Nickel based anode (NiO/YSZ) shows a serious carbon deposition reported in recent research. Therefore, CuO is added to replace the NiO. In this study, three anode powders (100%Ni with 8YSZ, 50%Cu-50%Ni with 8YSZ and 100%Cu with 8YSZ) are prepared by powder mixing in well-dispersed slurry. A new approach to verify the effects of carbon deposition by measuring the permeability of the anodes are used in this study. C50N50Z shows a good catalytic ability and low coking rate for CH4. The conductivity of C50N50Z is 1503 Scm-1 at 650 oC. Another two functions of copper can be combined with this anode. Four copper-based metal and nickel wires (Cu, Cu11Ni, Cu-38Zn, Cu9Ni6Sn, Ni) are tested for their electric conductivity at room to high temperature. Due to a high electric conductivity, Cu is good enough to apply as a material for current collector. Five different thermocouples made from above wires are also aging in air for more than 100 h at 200 oC~650 oC. Because of sensibility and less drift (<5%) of thermopotential at 200 oC to 650 oC, three thermocouples Cu-Cu11Ni, Cu-Cu9Ni6Sn and Cu-Ni are suitable for intermediate-temperature SOFC as temperature sensors. Thus, triple function of Cu-based materials can be applied on anode side of SOFCs.
Deibel, Carsten [Verfasser]. "Defect spectroscopy on Cu(In, Ga)(S, Se)2-based heterojunction solar cells : role of the damp heat treatment / Carsten Deibel." 2002. http://d-nb.info/966279530/34.
Повний текст джерелаMa, Giang N. "XAFS investigation of the local structure of cadmium in Cu(In[subscript 0.7]Ga[subscript 0.3])Se���-based thin films." Thesis, 2004. http://hdl.handle.net/1957/30970.
Повний текст джерелаGraduation date: 2004
Tsao, Hsiang-Wei, and 曹翔崴. "Investigation of Light Soaking Effect on Chemical Bath Deposited Zn(O,S) Buffer Layer-based Cu(In,Ga)(S,Se)2 Thin Film Solar Cells." Thesis, 2018. http://ndltd.ncl.edu.tw/handle/35z5jr.
Повний текст джерелаHauschild, Dirk. "Electron and soft x-ray spectroscopy of indium sulfide buffer layers and the interfaces in Cu(In,Ga)(S,Se)2-based thin-film solar cells." Doctoral thesis, 2015. https://nbn-resolving.org/urn:nbn:de:bvb:20-opus-126766.
Повний текст джерелаDie vorliegende Arbeit untersucht Dünnschichtsolarzellen auf Basis von Cu(In,Ga)(S,Se)2 (CIGSSe). Um hohe Effizienzen bei CIGSSe-basierten Solarzellen zu erreichen, wurde bisher meist eine toxische und schlecht in einen Vakuumprozess integrierbare nasschemische CdS Pufferschicht verwendet. Mit Indiumsulfid konnte stattdessen eine vielversprechende alternative Pufferschicht gefunden werden, die diese nachteiligen Eigenschaften von CdS nicht aufweist und Solarzellen mit diesem Puffermaterial zeigen gute bis sehr gute Wirkungsgrade. Um die Ursachen der guten Leistungen herauszufinden, wurden die in der Solarzelle vorkommenden Oberflächen und Grenzflächen, die für den Ladungstransport eine zentrale Rolle spielen, Schritt für Schritt als Modellsysteme charakterisiert. Für einen InxSy-basierten Puffer, der durch die physikalische Gasphasenabscheidung aufgebracht wird, fehlt der Reinigungsprozess der Absorberoberflächen durch die nasschemische CdS Abscheidetechnik. Deshalb müssen Adsorbatbildung, Oxidation und Segregation von Absorberelementen die innerhalb der ersten Tage nach der Herstellung auftreten (je nach Feuchtigkeitsgehalt und Temperatur der Umgebung) berücksichtigt werden. Im ersten Teil der Arbeit werden solche Einflüsse auf die Oberfläche des Absorbers untersucht. Zellen mit einem Indiumsulfidpuffer zeigen Wirkungsgrade, die von der nominellen Indiumkonzentration x abhängen und bei x = 42% ein Optimum aufweisen. Eine stöchiometrische Analyse der InxSy Oberflächen ergab für 40.2% ≤ x ≤ 43.2% eine schwefelarme bzw. indiumreiche Oberfläche im Vergleich zu stöchiometrischem In2S3 (40% In und 60% S). Allerdings zeigen die untersuchten Proben für verschiedene Indiumkonzentrationen im Rahmen der oberflächensensitiven Photoemission (PES) und volumensensitiven Röntgenemission (XES) keine quantitativen Unterschiede. Mit Hilfe der PES und inversen PES (IPES) wurde der Bandverlauf an der InxSy/CISSe Grenzfläche in Abhängigkeit von der Indiumkonzentration untersucht und für x = 42% konnte ein flacher Bandverlauf ermittelt werden. Um den Einfluss des im Herstellungsprozess vorkommenden Temperaturschritts zu untersuchen, wurden die Proben für 30 Minuten auf 200 °C geheizt. Dabei konnte eine signifikante Diffusion von Kupfer aus dem Absorber in den Puffer beobachtet werden. Der Temperaturschritt führt neben der bereits bekannten Effizienzerhöhung vor allem zu einer Verringerung der Bandlücke des Puffers. Der Einfluss der Kupferdiffusion auf die verborgene InxSy/CISSe Grenzfläche wurde analysiert und für x = 40:2% wurde ein deutlicher "Cliff" (Stufe im Leitungsband nach unten) gefunden. Für Indiumkonzentrationen 41% ≤ x ≤ 43.2% wurde ein kleiner "Spike" (Stufe im Leitungsband nach oben) identifiziert, was dabei im Einklang mit den optimalen Wirkungsgraden ist. In einem weiteren Schritt wurde ein mit Natrium dotierter Indiumsulfidpuffer Na:InxSy, der verbesserte Wirkungsgrade zeigt, untersucht. Diese konnte zum einen auf eine deutlich vergrößerte Oberflächenbandlücke des Puffers zurückgeführt werden. Zum anderen wurde nach dem Temperaturschritt im Vergleich zu dem InxSy Puffer eine um den Faktor zwei verringerte Kupferdiffusion an der Oberfläche festgestellt. Des Weiteren konnte bei dem Temperaturschritt eine Diffusion von Selen festgestellt werden, die den vor dem Temperaturschritt vorhandenen "Spike" im Leitungsbandverlauf verringert. Nach dem Aufbringen der i-ZnO Schicht (i = intrinsisch, nicht absichtlich dotiert) als Teil des Frontkontakts auf den Na:InxSy Puffer, wurden Durchmischungseffekte an der i-ZnO/Na:InxSy Grenzfläche gefunden. Im weiteren Verlauf zeigte sich, dass der nominell auftretende "Cliff" zwischen i-ZnO und Na:InxSy durch die Bildung von ZnS reduziert bzw. vernachlässigt werden kann. Im letzten Teil der Arbeit wurde die etablierte oberflächensensitive reflektive Elektronenenergieverlustspektroskopie auf die Absorber- sowie Indiumsulfidoberflächen angewandt. Die ermittelten inelastisch gestreuten Verlustspektren λK(E) wurden mit dem Drude-Lindhard Modell simuliert und somit die dielektrische Funktion der jeweiligen Oberflächen bestimmt. Ein Vergleich mit volumensensitiven optischen Werten zeigt für die InxSy Schichten eine gute Übereinstimmung. Bei der CIGSSe Oberfläche konnten hingegen signifikante Unterschiede festgestellt werden. Dabei wurde erstmals die Oberflächenbandlücke eines Cu(In,Ga)(S,Se)2 Absorbers unabhängig von PES/IPES zu E^Ex_Gap = (1.4 ±0.2) eV verifiziert. Abschließend wurden die mittleren freien Weglängen der Elektronen l für die drei untersuchten Oberflächen für unterschiedliche Energien mit theoretischen Werten und der universellen Kurve verglichen
"Cu-Silica Based Programmable Metallization Cell: Fabrication, Characterization and Applications." Doctoral diss., 2017. http://hdl.handle.net/2286/R.I.44992.
Повний текст джерелаDissertation/Thesis
Doctoral Dissertation Electrical Engineering 2017
Cai, Jheng-Yan, and 蔡政諺. "Simulation for Cu-platted Front Side Metallization of Si-based Solar Cell." Thesis, 2017. http://ndltd.ncl.edu.tw/handle/v7evnw.
Повний текст джерела國立中央大學
物理學系
105
In recent decades, the solar energy techniques grow very quickly. Because solar energy cannot exhaust greenhouse gas that is the main cause of greenhouse effect. Currently, the solar cell cannot be commonly employed since its price is still expensive. Our goal in this study is to greatly reduce the cost but only losing little efficiency. One solution is to replace a portion of silver front side metallization by copper. In our simulation, we change number, height and composition of fingers to simulate solar cell efficiency. First, we obtained the parameters which are independent of fingers, and then used PC1D to calculate cell’s IV-data. Secondly, the single diode model is employed to obtain the short circuit current, the series resistance which are independent fingers, dark current, the ideal factor and the shunt resistances. Finally, once the finger’s electrical and structural parameters are included, the cell’s efficiency can be calculated. For cupper-plated front side metallization, the simulation process is similar but considering electric and structural parameters of copper. We discussed the relations between silver height, copper height and efficiency; and the relation between widening ratio and efficiency. By comparing single layer finger with Cu-plated finger, we successfully reduce about 24.47% of Ag with additional 21.38% of Cu , while, only 0.012% of efficiency is losing. This reveals a promising reduction of cost in Si-based solar cell with Cu-platted front side metallization. Finally, we propose a promising calculation tools, combining the PC1D and circuit model, to simulate the best combination of Si-based solar cell with Cu-platted front side metallization, as long as the real electrical and structural parameters implemented from experimental results.
GIUSI, DANIELE. "Development of Cu-based electrodes and cell design for photo- and electro-catalytic CO2 reduction." Doctoral thesis, 2021. http://hdl.handle.net/11570/3184194.
Повний текст джерелаThe process of carbon dioxide (CO2) reduction has attracted a great attention in the scientific community in the last years. The development of materials and systems capable to convert H2O and CO2 into valuable products by using renewable and clean energy represents an attractive challenge for the next future. In this context, the aim of the present PhD work is to explore different routes by photo- and electrocatalytic approaches to convert CO2 into value-added chemicals and fuels. The research activity concerned both the synthesis of the catalytic materials used for the preparation/assembling of the electrodes and the design and engineering of the electrochemical devices. Most of the activities were carried out at the laboratory CASPE/INSTM (Laboratory of Catalysis for Sustainable Production and Energy) of the University of Messina. Moreover, during the second year, one month was spent at the Institut Català d'Investigació Química (ICIQ Tarragona, Spain) and two months at the Institute for Chemical and Bioengineering (ETH Zürich, Switzerland) in the framework of H2020 A-LEAF Project and Research and Mobility ARCADIA Project. The thesis is organized in six chapters, plus the conclusions. Chapter 1 focuses on CO2 environmental issues, general implications and consequent opinions and strategies adopted by the scientific community in a long-term period to address these problems, with regard to the main common carbon capture and storage (CCS) strategies and photochemical, biochemical, photo- and electrocatalytic routes. Chapters 2 and 3 concern the theoretical basis on photo- and electro-chemical CO2 reduction routes, including the state-of-the-art of the main photo- and electro-catalytic electrodes used so far and the engineering aspects of reactor design. In particular, the most promising photo-electro-chemical and photovoltaic devices are discussed, with emphasis on the advanced strategies concerning the coupling of these systems with different configurations and using different advanced materials, to achieve higher catalytic performances. Chapters 4 and 5 refer to the experimental results obtained by photo- and electro-catalytic approaches. The states of the art for these two different approaches are presented, together with the specific scope of each chapter, especially highlighting their differences but also the many common points in terms of reaction mechanism and kinetics. The catalysts used for the experimental investigation were nanostructured CuxO-based materials, prepared by different techniques, such as precipitation, solvothermal and electrodeposition methods, and then deposited on metallic, metal oxides or carbon-based substrates. Particularly, electrodeposition was a very versatile method allowing a direct controlled deposition of Cu2O by modulating some parameters during the synthesis, such as time deposition, pH and type of electrolyte. Most of the study was focused on cuprous oxide (Cu2O) semiconductor, for its interesting characteristics: it is an earth abundant material, non-toxic, showing a band gap of around 2.2 eV as bulk material. It has been widely used for solar cell sensitizers, sensors (see Chapter 6) and in CO2 photocatalysis, especially for the formation of CO and CH4. Chapter 4 of this work shows that, due to a novel concept of gas flow-through photo(electro)catalytic reactor, the process selectivity can be shifted to more interesting carbon products, involving the formation of C-C bonds. This novel homemade device uses copper-functionalized nanomembranes, based on aligned TiO2 nanotube arrays (prepared by controlled anodic oxidation) grown over a microperforated metallic substrate, acting as an electron collector and to provide the necessary robustness, which are then functionalized with CuxO by electrodeposition. This concept is quite different from the conventional CO2 photocatalytic approaches. Due to the peculiar characteristics and conditions in the novel photoreactor (working under a cross-flow of gaseous CO2 saturated with water crossing through the photocatalytic nanomembrane), it is possible to evidence for the first time the highly selective CO2 conversion to C1-C2 carboxylic acids (formic, acetic and oxalic acids) without formation of H2, CO, CH4 or other hydrocarbons. Copper-oxide introduces an additional reaction pathway to C1-C3 alcohols (methanol, ethanol and isopropanol) or derived products (methyl formate). The best performances were obtained when Cu2O nanoparticles (p-type) are deposited over n-type TiO2 nanotubes, due to the creation of a p-n type heterojunction that improves visible light harvesting, giving an apparent quantum yield (ratio between electrons reacted and photons absorbed) with solar illumination of about 21 %. The Faradaic Efficiency on this photocatalyst was about 42 % to methanol and 44 % to acetic acid. Among the tested samples, Faradaic Efficiency up to 47 % to methanol or up to 73 % to acetic acid are observed. The relevance of these results on the mechanism of CO2 photoreduction was also discussed along Chapter 4. Chapter 5 focuses instead on the electrocatalytic reduction of CO2. In this part of the work, Cu2O was employed as pure oxide (at different oxidation states, I and II) or doped with other elements, such as S and In (CuSx and Cu-In), for the design of composite electrodes able to address the process selectivity towards formic acid or carbon monoxide, respectively, through the modification of binding energy of the reaction intermediates with the catalytic active sites. Specifically, the research activities concerned preliminarily the optimization of the operating conditions in terms of reactor configuration, cathodic pH, applied potential at the working electrode (in the investigated range from -0.4 V to -1.0 V vs. RHE), CO2 inlet flow and type of membrane (i.e. cationic, anionic or bipolar). A precise protocol was defined for carrying out each electrochemical test, ranging from cyclic voltammetry and capacitance determination to chronoamperometry steps, the latter including the determination of CO2 reduction products. Testing with pure CuxO deposited on a carbon gas diffusion layer (GDL) in presence of a liquid electrolyte (0.1 M KHCO3 aqueous solution) showed that i) the optimal catalyst loading on GDL was 10 mg cm-2; ii) the best productivity and Faradaic efficiency (FE) to formic acid and carbon monoxide was obtained at -0.6 V vs. RHE (12.8 mol h-1 and 5.5%, respectively); CuO/GDL behaved better than Cu2O/GDL, with an increase of catalytic performance (i.e. FE = 12.6 %). The electrochemical behaviours of both the electrocatalysts were also investigated by Electrochemical Impedance Spectroscopy (EIS), evidencing a lower charge transfer resistance for CuO/GDL (6.5 Ω) with respect to Cu2O/GDL (39.5 Ω). The electrocatalytic activity strongly increased when advanced electrodes like CuSx and Cu-In were used, providing a FE to formic acid of 58.5% and a FE % to carbon monoxide of 55.6%, respectively. Different cell configurations were investigated by using these catalysts, depending on the pathways of gas flow within the cell in three different compartments (a gas chamber, a liquid catholyte compartment, a liquid anolyte compartment). The best configuration in terms of maximum FE and minimization of H2 formation (by proton reduction as side reaction) referred to the separation of gas and liquid products, collecting the gas products directly from the outlet of the gas chamber, thus overcoming issues related to the low solubility of CO2 in aqueous solution. The behaviours of many commercial selective membranes were also evaluated, i.e. cationic (protonic), anionic and bipolar, also reinforced with Teflon. Results showed that Teflon reinforced protonic (Nafion N324) and bipolar (Fumasep FBM-PK) membranes provided the best activity; however, the reinforced Nafion allowed better to minimize osmosis of electrolyte and cross-over of the reduction products, avoiding their oxidation at the anode side. Finally, Chapter 6 focuses on strategies for the glucose detection in biofermentation processes and particularly on the amperometric methods based on the use of non-enzymatic glucose sensors. The most important biofermentation process is the alcoholic fermentation, which consists in the production of CO2 and ethanol starting from several sugar substrates like glucose, sucrose and fructose. Industrial applications today are aimed to decrease the dependence of crude oil producing bioethanol, which is blended with the gasoline. In this context, Cu2O nanocubes deposited on commercial screen printed carbon electrodes (SPCEs) with different particles size were developed as sensors. The performances of these Cu-modified SPCEs were evaluated in terms of glucose selectivity and sensitivity by cyclic voltammetry and chronoamperometry analysis and impedance resistance measurements. The developed electrodes showed a good sensitivity (1040µA/mM cm-2) and selectivity towards the glucose detection with a high linear range response, without interference by other substrates, suggesting that the SPCE modification with Cu2O could be a simple way to fabricate inexpensive and reliable sensors to monitor glucose in bio-fermentation processes.
Chou, Chih-Shiun, and 周志勳. "Application of Cu-Based Material on Solid Oxide Fuel Cell (SOFC) and Development of Melt-Extrusion (ME) Module." Thesis, 2015. http://ndltd.ncl.edu.tw/handle/26619039355834384597.
Повний текст джерела國立臺灣大學
材料科學與工程學研究所
103
This study used Cu-based materials as an anode of solid oxide fuel cells (SOFCs) and conducted the following R&D works. Properties of Cu and Cu-Zn alloy were investigated, including electrical conductivity, coefficient of thermal expansion (CTE), hardness and oxidation behavior. The oxidation-resistance of Cu, Ni and Ti-6Al-4V was investigated and compared. Moreover, the microstructure of the oxide layers was observed to verify the results of TGA test. This study also developed cobalt-doped SDC cermet as an electrolyte for intermediate temperature (IT)-SOFC. The Cu-based electrode provided good electronic conductivity and prevented carbon deposition. The SDC was used as catalyst and ionic conductor. The methods to synthesize SDC and sinter a dense SDC electrolyte were also provided in this study. Maximum power density of the Cu-based SOFC was 112 mW cm-2 at 750 oC. On the other hand, due to a low melting point and good formability of Cu-Zn alloy, it was suitably applied on 3D printing (3DP) technique. As a result, a melt-extrusion (ME) module was designed to print Cu-Zn alloy. The ME module could reach 1100 oC to extrude Cu-Zn alloy. Besides, the heat insulation of the module was excellent, which was 51 oC outside the module while the temperature in the nozzle was 1000 oC.
賴哲賢. "Studies of depth-dependent compositions and band structure in Cu(In,Ga)(Se,S)2-based solar cell device." Thesis, 2014. http://ndltd.ncl.edu.tw/handle/6es74r.
Повний текст джерела國立清華大學
先進光源科技學位學程
102
In this study, we investigated the depth-dependent compositions and band structure of Cu(In,Ga)(Se,S)2-based solar cell device. In order to measure the elemental composition distribution and the band structure of the multiple-layered films, we polished the CIGSSe-based solar cell with a gradient along the normal direction of the sample to observe the variations of elemental distributions, chemical bonds and electronic band structure by means of X-ray photoemission spectroscopy (XPS). The structural characteristic at the interfaces of layers were also investigated by using X-ray absorption spectroscopy (XAS). According to the observation of the band offset at the interface between CdS and CIGSSe layers, we can deduce that the conduction band corresponds to the cliff type (Ec= -0.47 eV). Therefore, this type of band structure is possibly increased the recombination probability at the interface and lead to a limitation in the open circuit voltage. The fitting results of B 1s photoelectron spectra reveals that in the bottom of ZnO layer, the concentration of the dopant boron becomes increased with respect to the boron oxide. Because the carrier concentration is increased in the region of ZnO layer near CdS, it would be beneficial to improve the carrier transport. Copper depletion was observed in the whole region of CIGSSe layer, which plays a role of acceptor due to copper vacancies and facilitates the formation of p-type semiconductor. The concentration ratio of In/Ga is decreased from the top to the bottom of the CIGSSe layer. The optimal band-gap distribution could be achieved by controlling the In/Ga ratios. We also found that the Mo(S,Se)2 layer was formed at the interface of CIGSSe and Mo layers, providing an ohmic contact and increasing the open circuit voltage to improve the device performance of the CIGSSe solar cell.
Hsiao, Sheng-Wei, and 蕭聖偉. "Depth Profiling and Band Structure Studies of Cu(In,Ga)(Se,S)2-based Solar Cell Using Scanning Photoelectron Microscopy (SPEM)." Thesis, 2014. http://ndltd.ncl.edu.tw/handle/2jc49g.
Повний текст джерела大同大學
光電工程研究所
102
High-efficiency Cu(In,Ga)(Se,S)2 (CIGSSe) thin-flim solar cells have many advantages, including 1. low cost and flexibility, 2. its higher stability under long-term exposure, 3. higher optoelectric efficiency compared with the other thin-film solar cells, 4. wide absorption spectrum. In this research, we present the depth profile of element composition and electronic structure of ZnO/CdS/CIGSSe/Mo/soda-lime glass using scanning photoelectron microscopy (SPEM).SPEM enables us to directly “observe” the depth-dependent composition of the thickness-gradient ZnO/CdS/CIGSSe/Mo/soda-lime glass due to its high spatial resolution (~200 nm) in photoelectron emission. In the results, we found that the upper region of ZnO layer exhibits the upward shift of valence band maximum, which can be attributed to the lower concentration of B-doped ZnO. The band structure of CdS/CIGSSe reveals a spike type. It is also found that the concentration ratios of Ga/In and Se/S are higher at the bottom of CIGSSe layer, leading to a larger band gap and a higher conduction-band minimum near the CIGSSe/Mo interface. In addition, the oxidization effects on the surface of CIGSSe layer under atmosphere exposure are also studied. The experimental results reveal that the oxidized species of Se and Ga at the surface of CIGSSe layer will be formed after several-hour air exposure. We can realize the surface contamination of CIGSSe absorber layer in the manufacturing process and try to provide a critical method for improving the efficiency of solar cell.