Статті в журналах: "Cu-Al Thin Film"

1

Hung, Fei Shuo, Fei Yi Hung, Che Ming Chiang, and Truan Sheng Lui. "Innovation and Annealed Effect of Sn-Al and Sn-Cu Composite Thin Films on the Electromagnetic Interference Shielding for the Green Materials." Advanced Materials Research 347-353 (October 2011): 547–54. http://dx.doi.org/10.4028/www.scientific.net/amr.347-353.547.

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Sn, Al and Cu not only possess electromagnetic interference shield efficiency, but also have the acceptable costs. In this study, sputtered Sn-Al thin films and Sn-Cu thin film were used to investigate the effect of the crystallization mechanism and film thickness on the electromagnetic interference (EMI) characteristics. In addition, the annealed microstructure, electrical conductivity and EMI of the Sn-xAl films and the Sn-xCu films were compared. The results show that Sn-Al film increased the electromagnetic interference (EMI) shielding after annealed. Sn-Cu films with higher Cu atomic concentration, the low frequency EMI shielding could not be improved. After annealing, the Sn-Cu thin film with lower Cu content possessed excellent EMI shielding at lower frequencies, but had an inverse tendency at higher frequencies.

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2

Yue, An Na, Kun Peng, Ling Ping Zhou, Jia Jun Zhu, and De Yi Li. "Influence of Ti Layer on the Structure and Properties of Al/Cu Thin Film." Advanced Materials Research 750-752 (August 2013): 1879–82. http://dx.doi.org/10.4028/www.scientific.net/amr.750-752.1879.

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Titanium and aluminum films were deposited on oxygen-free copper substrates by electron beam evaporation method to obtain Al/Cu and Al/Ti/Cu layer composites. Evolution of microstructure and properties of Al/Cu and Al/Ti/Cu thin film during heat treatment processes were investigated by XRD, SEM and electrical properties analysis. The introduce of Ti layer can prevent the formation of Cu-Al intermetallic compounds, and has no obvious influence on the electrical resistivity of Al/Cu thin film, which can be used as a pad in microelectronic package and devices.

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3

Rose, J. H., J. R. Lloyd, A. Shepela, and N. Riel. "Microstructure of Al-Cu thin-film interconnect." Proceedings, annual meeting, Electron Microscopy Society of America 49 (August 1991): 820–21. http://dx.doi.org/10.1017/s0424820100088415.

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The precipitate structure of bulk aluminum alloys was heavily studied with x-ray diffraction commencing in the 1930s and via direct observation with the development of transmission electron microscopy (TEM) techniques in the 1950s. In 1970, recognition of the electromigration performance benefits of Cu additions to Al interconnect in integrated circuit devices precipitated studies on Al-Cu thin films. However, the microstructure of these films remains only partially known, in part due to the many process and interconnect geometry variables. In particular, there has been minimal attempt to study films which mimic as closely as possible the environment and thermal history of real interconnect (prior studies typically have examined unpatterned or unpassivated films.) In the present work, Al-Cu films in standard life test devices have been studied. This work is directed at understanding the evolution of microstructure during device processing and life testing and application of this knowledge to a better understanding of the role of microstructure in electromigration in Al-Cu interconnect. The present contribution describes initial microstructural observations on a variety of annealed samples.

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4

Afifah, Faras, Arif Tjahjono, Aga Ridhova, Pramitha Yuniar Diah Maulida, Alfian Noviyanto, and Didik Aryanto. "Influence of Al and Cu Doping on the Structure, Morphology, and Optical Properties of ZnO Thin Film." Indonesian Journal of Chemistry 23, no. 1 (January 19, 2023): 44. http://dx.doi.org/10.22146/ijc.73234.

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In this study, ZnO thin films doped with Al (AZO) and Cu (CZO) were fabricated on a glass substrate via sol-gel spin coating. The influence of 1 atomic % Al and Cu doping on the structure, morphology, as well as optical properties of ZnO thin film was then analyzed with X-ray diffraction (XRD), atomic force microscopy (AFM), and UV-Vis spectroscopy. XRD analysis revealed that all samples possessed hexagonal wurtzite crystal structures with 3 to 4 preferred orientations. Al and Cu doping caused a decrease in crystal size, while the lattice strain (e) and dislocation density (ρ) were increased. AFM indicated that Al and Cu doping reduced the surface roughness of the ZnO thin film. Optical measurement showed that all samples exhibited high transmittance (> 80%) in the visible light region. Transmittance was reduced after doping, while the band gaps for ZnO, AZO, and CZO thin films are 3.26, 3.28, and 3.23 eV. This study showed that an addition of 1 atomic % transition metal (Al and Cu) greatly influences the structure, morphology, and optical properties of ZnO thin film.

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5

Lucadamo, G., K. Barmak, and K. P. Rodbell. "Texture in Ti/Al and Nb/Al multilayer thin films: Role of Cu." Journal of Materials Research 16, no. 5 (May 2001): 1449–59. http://dx.doi.org/10.1557/jmr.2001.0202.

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Fiber texture in Ti/Al and Nb/Al polycrystalline multilayer thin films, with bilayer thicknesses (Λ) ranging from 20–333 nm and having a fixed stoichiometry of 1/3, has been investigated by using x-ray pole figures and transmission electron microscopy. Two sets of films were deposited; one set contained pure Al and the other Al–1.0 wt% Cu. The results indicated that texture was strengthened by the formation of a coherent superlattice for the Nb/pure-Al film with the smallest bilayer thickness. By contrast, the texture in Ti/pure-Al films with a similar period was not as strong. The texture also decreased with increasing Λ for both the Ti/pure-Al and Nb/pure-Al films. An increase in the width of the Al (111) peak and an offset of the fiber axis from the substrate normal of 5–8° was observed in the Λ = 333 nm films prepared by using Al–1.0 wt% Cu. The decrease in texture on addition of Cu to Al was attributed primarily to an increase in interlayer roughness as a consequence of reduction in the Al(Cu) grain size. These observations were interpreted in the context of structure zone and dynamic roughness models of film growth.

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6

Sato, Yuichi, Toshifumi Suzuki, Hiroyuki Mogami, Fumito Otake, Hirotoshi Hatori, and Suguru Igarashi. "Solid Phase Growth of some Metal and Metal Oxide Thin Films on Sapphire and Quartz Glass Substrates." Materials Science Forum 753 (March 2013): 505–9. http://dx.doi.org/10.4028/www.scientific.net/msf.753.505.

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Solid phase growth of thin films of copper (Cu), aluminum (Al) and zinc oxide (ZnO) on single crystalline sapphire and quartz glass substrates were tried by heat-treatments and their crystallization conditions were investigated. ZnO thin films relatively easily recrystallized even when they were deposited on the amorphous quartz glass substrate. On the other hand, Cu and Al thin films hardly recrystallized when they were deposited on the quartz glass substrate. The metal thin films could be recrystallized at only extremely narrow windows of the heat-treatment conditions when they were deposited on the single crystalline sapphire substrate. The window of the solid phase heteroepitaxial growth condition of the Al film was wider than that of the Cu film.

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7

Ryabtsev, S. I., O. V. Sukhova, and V. A. Polonskyy. "Structure and corrosion in NaCl solution of quasicrystalline Al–Cu–Fe cast alloys and thin films." Journal of Physics and Electronics 27, no. 1 (October 17, 2019): 27–30. http://dx.doi.org/10.15421/331904.

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For the first time, quasicrystalline Al60Cu28Fe12 films with 260 nm thickness cooled at 1012–1014 K/s were produced by the modernized method of three-electrode ion-plasma sputtering. Films were deposited on NaCl substrate. The structure of as-sputtered films was investigated in comparison with that of as-cast specimens by methods of quantitative metallography, X-ray analysis, and scanning electron microscopy. Corrosion behavior in 5% NaCl aqueous solution was studied by potentiodynamic method and model tests. In the structure of the as-cast Al–Cu–Fe alloy, the quasicrystalline icosahedral i-phase was established to co-exist with λ -Al13Fe4 , τ-AlCu(Fe), η-AlCu, and θ-Al2Cu crystalline phases and occupy ~56 % of the alloy volume. The Al–Cu–Fe film contains dispersive quasicrystalline i-phase (~3 nm in size) that is stable up to 723 К. Corrosion of the as-sputtered Al–Cu–Fe film runs at the lower rate as compared with that of the as-cast alloy of the same composition. Model corrosion tests for 1, 2, 3, 4, 8 days with 5% NaCl solution at 293 K indicate that the investigated Al–Cu–Fe film remains virtually untouched by corrosion. No marks of pittings typical for as-cast Al–Cu–Fe alloys are observed on the film surface affected by saline solution.

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8

Palmstro/m, C. J., J. W. Mayer, B. Cunningham, D. R. Campbell, and P. A. Totta. "Thin film interactions of Al and Al(Cu) on TiW." Journal of Applied Physics 58, no. 9 (November 1985): 3444–48. http://dx.doi.org/10.1063/1.335765.

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9

Eriksson, Fredrik, Simon Olsson, Magnus Garbrecht, Jens Birch, and Lars Hultman. "Phase Evolution of Al/Cu/Co Thin Films into Decagonal Quasicrystalline Phases." Acta Crystallographica Section A Foundations and Advances 70, a1 (August 5, 2014): C82. http://dx.doi.org/10.1107/s2053273314099173.

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Quasicrystals have drawn increased scientific attention during the past decade not only for the purpose of fundamental research, but also due to their possible applications as bulk materials or thin films [1]. In particular, decagonal (d) quasicrystals could be very attractive because of their anisotropic structure being quasiperiodic in two dimensions and periodic in the third. Recently it has been shown that icosahedral quasicrystalline Al-Cu-Fe and approximant Al-Si-Cu-Fe thin films can be prepared by annealing a multilayer thin film on a sapphire or Si substrate, respectively [2]. In this work, multilayered Al/Cu/Co thin films have been deposited by magnetron sputtering onto Al2O3 (0001) and Si (001) substrates. The multilayers were produced with a multilayer period of 100 nm, repeated 3 times to a total thickness of 300 nm. The Al:Cu:Co layer thickness ratios were adjusted to obtain films with global compositions around the ideal decagonal quasicrystalline phase d-Al65Cu17.5Co17.5. The phase evolution during annealing, and the concurrent changes in film microstructure and crystal quality was investigated. The decagonal d-Al-Cu-Co and d-Al-Cu-Co-Si phases were both found by X-ray diffraction, electron diffraction, and high-resolution (scanning) electron microscopy to form at 5000C on Al2O3 and Si, respectively, and at 6000C these were the only phases present. Figure 1 shows the HRTEM micrograph of the Al-Cu-Co-Si phase after annealing to 7000C. At increasing temperatures, the quasicrystal grains grew larger in size, up to 500 nm, and the Al-Cu-Co obtained a preferred orientation with the 10-fold periodic axis aligned with the Al2O3 substrate normal. The d-Al-Cu-Co phase persisted to more than 8500C, with a complete 00001-texturing, while the d-Al-Cu-Co-Si phase was replaced by other crystalline phases at 8000C. The d-Al-Cu-Co-Si phase was also observed to grow into the Si substrate by a solid-state diffusion reaction.

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10

WANG, YUE, HAO GONG, and LING LIU. "CRYSTAL STRUCTURE AND PROPERTIES OF CU-AL-O THIN FILMS." International Journal of Modern Physics B 16, no. 01n02 (January 20, 2002): 308–13. http://dx.doi.org/10.1142/s0217979202009809.

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P-type transparent conducting oxide thin films have attracted much attention due to their potential applications in novel transparent p-n junction devices. In this work, the transparent conducting Cu-Al-O thin films were prepared by the plasma enhanced chemical vapor deposition using metal organic precursors of Cu(acac) 2 and Al(acac) 3 (acac=acetylacetonate) while the substrate temperature was varied from 700 to 800°C. The x-ray diffraction and SEM results are analyzed to investigate the structure of the as-deposited and annealed films. The films contain metal copper and small grains of CuAlO 2. After annealing, metal copper turned into CuO . Hall effect measurements reveal that these films are p-type semiconductors and the film conductivity increased with the growth temperature.

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11

Bilican, Doga, Samer Kurdi, Yi Zhu, Pau Solsona, Eva Pellicer, Zoe H. Barber, Alan Lindsay Greer, Jordi Sort, and Jordina Fornell. "Epitaxial Versus Polycrystalline Shape Memory Cu-Al-Ni Thin Films." Coatings 9, no. 5 (May 8, 2019): 308. http://dx.doi.org/10.3390/coatings9050308.

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In this work, two different approaches were followed to obtain Cu-Al-Ni thin films with shape memory potential. On the one hand, Cu-Ni/Al multilayers were grown by magnetron sputtering at room temperature. To promote diffusion and martensitic/austenitic phase transformation, the multilayers were subjected to subsequent heat treatment at 800 °C and quenched in iced water. On the other hand, Cu, Al, and Ni were co-sputtered onto heated MgO (001) substrates held at 700 °C. Energy-dispersive X-ray spectroscopy, X-ray diffraction, and transmission electron microscopy analyses were carried out to study the resulting microstructures. In the former method, with the aim of tuning the thin film’s composition, and, consequently, the martensitic transformation temperature, the sputtering time and applied power were adjusted. Accordingly, martensitic Cu-14Al-4Ni (wt.%) and Cu-13Al-5Ni (wt.%) thin films and austenitic Cu-12Al-7Ni (wt.%) thin films were obtained. In the latter, in situ heating during film growth led to austenitic Cu-12Al-7Ni (wt.%) thin films with a (200) textured growth as a result of the epitaxial relationship MgO(001)[100]/Cu-Al-Ni(001)[110]. Resistance versus temperature measurements were carried out to investigate the shape memory behavior of the austenitic Cu-12Al-7Ni (wt.%) thin films produced from the two approaches. While no signs of martensitic transformation were detected in the quenched multilayered thin films, a trend that might be indicative of thermal hysteresis was encountered for the epitaxially grown thin films. In the present work, the differences in the crystallographic structure and the shape memory behavior of the Cu-Al-Ni thin films obtained by the two different preparation approaches are discussed.

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12

Colgan, E. G., and B. Blanpain. "The effect of Cu on morphological instabilities in thin Al/Pt films." Journal of Materials Research 7, no. 5 (May 1992): 1093–95. http://dx.doi.org/10.1557/jmr.1992.1093.

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Al films deposited on Pt layers developed voids after annealing at 250 °C. The amount of Al in the area surrounding the voids increased relative to the as-deposited film. The addition of 1 or 4% Cu to the Al suppressed the void formation and lateral Al migration. The void formation is related to compound formation with the Pt. The addition of Cu to the Al did not modify the Pt2Al3 formation.

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13

Mingard, K. P., and B. Cantor. "Microstructural characterization of reactions in Al–Zr thin film couples." Journal of Materials Research 8, no. 2 (February 1993): 274–85. http://dx.doi.org/10.1557/jmr.1993.0274.

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The mechanisms of reaction in sputter-deposited Al–Zr thin film couples have been investigated using extensive transmission electron microscopy (TEM) observations of cross-sectional specimens prepared by the novel use of an ultramicrotome. The TEM observations greatly facilitated understanding of composition-depth profiles obtained by Rutherford backscattering spectroscopy (RBS). The reaction between Al and Zr in thin films, and the influence of Cu on this reaction, was shown by the TEM to be much more complex than previously reported in studies that largely used RBS. Reaction of Al and Zr in sputter-deposited films occurs in two stages. Initially reaction occurs by growth of an amorphous layer at the Zr interface and is promoted by intermixing of Al and Zr during deposition. Growth of an amorphous layer in an Al-transition metal thin film couple has not been reported previously. Subsequently, the amorphous layer is consumed by growth of microcrystalline Al3Zr from the Zr/reaction layer interface. The transition from growth of amorphous to microcrystalline Al3Zr results in thickening of the reaction layer with an overall growth rate exponent of 1/3. The Al3Zr grows with the metastable L12 cubic structure, except in the presence of Cu, when it grows with the tetragonal DO23 structure. The fine initial Al and Zr grain sizes limit the influence of Cu on the morphology of the reaction; in all cases, a continuous and uniform reaction layer thickness is observed by TEM.

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14

Zhang, Yongjian, Zhengtang Liu, Duyang Zang, Liping Feng, Xingsen Che, and Yanyan Li. "Optical and Electrical Properties of Magnetron Sputtering Deposited Cu–Al–O Thin Films." International Journal of Antennas and Propagation 2012 (2012): 1–7. http://dx.doi.org/10.1155/2012/823089.

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We have successfully prepared Cu–Al–O films on silicon (100) and quartz substrates with copper and aluminum composite target by using radio frequency (RF) magnetron sputtering method. We have related the structural and optical-electrical properties of the films to the sputtering area ratio of Cu/Al for the target (rCu/Al). The deposition rate of the film andrCu/Alcan be fitted by an exponential function.rCu/Alplays a critical role in the final phase constitution and the preferred growth orientation of the CuAlO2phase, thus affecting the film surface morphology significantly. The film with main phase of CuAlO2has been obtained withrCu/Alof 45%. The films show p-type conductivity. With the increase ofrCu/Al, the electrical resistivity decreases first and afterwards increases again. WithrCu/Alof 45%, the optimum electrical resistivity of 80 Ω·cm is obtained, with the optical transmittance being 72%–79% in the visible region (400–760 nm). The corresponding direct band gap and indirect band gap are estimated to be 3.6 eV and 1.7 eV, respectively.

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15

Ding, Su-Ying, Si-Qi Yu, Xiao-Xia Wang, Zi-Hua Wu, Wen-Qin Li, Wei Jia, and Hua-Qing Xie. "Fabrication of Buffer-Window Layer System for Cu(In, Ga)Se₂ Thin Film Devices by Chemical Bath Deposition and Sol–Gel Methods." Journal of Nanoelectronics and Optoelectronics 16, no. 12 (December 1, 2021): 1913–22. http://dx.doi.org/10.1166/jno.2021.3145.

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Recently, nontoxic fabrication for Cu(In, Ga)Se2 thin films gained increasing popularity. In this work, chemical bath deposition and Sol–gel methods were utilized in the fabrication of an environmentally buffer-window (ZnS-ZnO/ZnO:Al) layer system for Cu(In, Ga)Se2 thin film devices. The influences of conditions like annealing temperature, coating times, and Al-doping amount were investigated. The surface morphology and optical properties illustrated a compact and uniform ZnS film with a band-gap of 3.78, which can be a good alternative to CdS film. Resistivity of 0.35 Ω·cm for the ZnO/ZnO:Al film was achieved by the ideal condition of 9 coating times and 5 Al-doping amounts. A cross-sectional view of the complete Cu(In, Ga)Se2 thin film was obtained, and the structure status was analyzed.

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16

David Theodore, N., Renu Sharma, and Juan Carrejo. "TEM/AFM correlative studies of thin-film metallization." Proceedings, annual meeting, Electron Microscopy Society of America 50, no. 2 (August 1992): 1414–15. http://dx.doi.org/10.1017/s042482010013170x.

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Since the invention of AFM (atomic force microscopy) applications of the technique have grown from year to year. It is expected that with time, there will be an increased use of AFM in the semiconductor industry for analysis of surface-topography and microstructure of thin films and heterostructures. However, before the technique can be used on its own for analyzing the behavior of thin films, it is necessary to establish legitimate areas of application of the technique. The present study uses AFM and TEM (transmission electron-microscopy) to study a few examples of thin-film metallizations and then looks at the extent of correlation between the two. It turns out that TEM and AFM work very well as complementary techniques. Caution is required in interpreting AFM micrographs.As examples of metallization Al(Cu), polysilicon and TiW thin films were investigated using AFM and TEM. Al(1.5%Cu) films were sputtered onto SiO2/Si substrates for ∼1 second (unbiased) at a substrate temperature of 450°C.

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17

LIM, WEI QIANG, SUBRAMANI SHANMUGAN, and MUTHARASU DEVARAJAN. "EVALUATION ON THE THERMAL AND STRUCTURAL PROPERTIES OF COPPER ALUMINUM OXIDE (Cu-Al2O3) THIN FILM ON AL SUBSTRATE: EFFECT OF ANNEALING TEMPERATURE." Surface Review and Letters 25, no. 07 (October 2018): 1950017. http://dx.doi.org/10.1142/s0218625x19500173.

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Layer stacking technique is incorporated in the deposition of copper aluminium oxide (Cu-Al2O3) thin films on Al substrate using RF magnetron sputtering. The Cu/Al2O3 stack is sputtered using Cu and Al2O3 target at ambient temperature and then annealed to yield the resultant Cu-Al2O3 films. The structural properties of the films are investigated through X-ray Diffraction (XRD) whereas the chemical structure of the films is studied using Fourier-transform infrared (FTIR). The thermal conductivity analyzer is used to evaluate the thermal properties of coated film on the Al substrate. XRD analysis revealed that the synthesized films are polycrystalline film composed mainly of CuAl2O4 phase along with Al2O3 and CuO phases. The thermal properties of Cu-Al2O3 coated Al substrates showed improvement in terms of thermal conductivity and diffusivity compared to bare Al substrate. The Cu-Al2O3 sample annealed at 400∘C exhibited a significant difference in thermal conductivity ([Formula: see text][Formula: see text]W/mK) compared to bare Al. The difference in thermal conductivity displayed by the annealed sample verified that TIMs did enhance the thermal path of entire substrate by allowing the heat to dissipate to surrounding environment more efficiently, thereby improving the heat dissipation system. From the results observed, it can be concluded that Cu-Al2O3 coated Al substrate can be made as alternative TIM in thermal management application.

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18

Mozetič, M., A. Zalar, and M. Drobnič. "Self-controlled diffusion of Al in Cu thin film." Vacuum 50, no. 1-2 (May 1998): 1–3. http://dx.doi.org/10.1016/s0042-207x(98)00016-5.

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19

Wei, Xianshun, Chengxi Ying, Jing Wu, Haoran Jiang, Biao Yan, and Jun Shen. "Fabrication, Corrosion, and Mechanical Properties of Magnetron Sputtered Cu–Zr–Al Metallic Glass Thin Film." Materials 12, no. 24 (December 11, 2019): 4147. http://dx.doi.org/10.3390/ma12244147.

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The appearance of thin film metallic glasses (TFMGs) is gaining increasing interest because of their unique mechanical and anticorrosion properties and potential engineering applications. In this study, Cu–Zr–Al ternary thin film metallic glasses were fabricated by using DC magnetron sputtering equipment with various target powers. The evolution of the structure was systematically investigated by grazing incidence X-ray diffractometer, scanning electron microscopy, and transmission electron microscopy. The deposition rate increases with the increasing of applied target power. The as-deposited thin films show an amorphous structure. The compositional fluctuations on the nanometer scale indicate the presence of two Cu- and Zr-rich amorphous phases. The electrochemical corrosion measurements indicated that Cu–Zr–Al thin film metallic glasses had good corrosion resistance in the sulfuric acid solution. Nanoindentation results showed that the mechanical deformation was found to be homogenous and reproducible with a high value range for the hardness and modulus.

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20

Park, M., S. J. Krause, and S. R. Wilson. "Growth kinetics of Al2Cu in an Al-1.5Cu thin film by in Situ TEM." Proceedings, annual meeting, Electron Microscopy Society of America 51 (August 1, 1993): 1172–73. http://dx.doi.org/10.1017/s0424820100151696.

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Cu alloying in Al interconnection lines on semiconductor chips improves their resistance to electromigration and hillock growth. Excess Cu in Al can result in the formation of Cu-rich Al2Cu (θ) precipitates. These precipitates can significantly increase corrosion susceptibility due to the galvanic action between the θ-phase and the adjacent Cu-depleted matrix. The size and distribution of the θ-phase are also closely related to the film susceptibility to electromigration voiding. Thus, an important issue is the precipitation phenomena which occur during thermal device processing steps. In bulk alloys, it was found that the θ precipitates can grow via the grain boundary “collector plate mechanism” at rates far greater than allowed by volume diffusion. In a thin film, however, one might expect that the growth rate of a θ precipitate might be altered by interfacial diffusion. In this work, we report on the growth (lengthening) kinetics of the θ-phase in Al-Cu thin films as examined by in-situ isothermal aging in transmission electron microscopy (TEM).

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21

Jeon, I., Yong Bum Park, Hisahiro Inoue, and Kikuo Kishimoto. "Thermo-Mechanical Stress in Passivated Al-0.5%Cu Thin Films." Key Engineering Materials 261-263 (April 2004): 507–12. http://dx.doi.org/10.4028/www.scientific.net/kem.261-263.507.

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The volume-averaged hydrostatic parts of thermo-mechanical stresses in the metal interconnect line determined by XRD method and finite element method are compared with each other. Two typical shapes of passivated Al-0.5%Cu thin film with SiN or FOx(Flowable Oxide) are selected for this study. For the numerical calculation, the stress concentration effect around the edge of Al-Cu thin film and elastic-plastic behavior of the film following its hardening rule are considered. For the stress obtained by XRD, the experimental results of Park and Jeon[Microelectron. Eng., 69 (2003) p.26] are introduced. A good agreement is found between the volume-averaged hydrostatic stresses obtained from each method.

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22

Lallouche, S., and M. Y. Debili. "Electrical Resistivity Improvement by Precipitation and Strain in Al-Cu Thin Films." Defect and Diffusion Forum 305-306 (October 2010): 33–37. http://dx.doi.org/10.4028/www.scientific.net/ddf.305-306.33.

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This work deals with Al-Cu thin films, deposited onto glass substrates by RF (13.56MHz) magnetron sputtering, and annealed at 773K. The film thickness was approximately the same 3-4µm. They are characterized with respect to microstructure, grain size, microstrain, dislocation density and resistivity versus copper content. Al (Cu) deposits containing 1.8, 7.21, 86.17 and 92.5at%Cu have been investigated. The use of X-ray diffraction analysis and transmission electron microscopy lead to the characterization of different structural features of films deposited at room temperature (< 400K) and after annealing (773K). The resistivity of the films was measured using the four-point probe method. The microstrain profile obtained from XRD thanks to the Williamson-Hall method shows an increase with increasing copper content.

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23

Srivastava, C., G. Thompson, D. Reinhard, J. Sebastian, T. Prosa, D. Larson, Z. Reddy, S. Gupta, W. Butler, and M. Weaver. "Atom Probe Tomography of Al-Cu Precipitation in an Al-5 at.%Cu Thin Film." Microscopy and Microanalysis 12, S02 (July 31, 2006): 1752–53. http://dx.doi.org/10.1017/s1431927606066207.

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24

Xia, Yanqiu, Yanan Cao, Xin Feng, and Haris M_ P_. "A comparative study on the electrical and tribological characteristic of magnetron sputtered Ag, Cu and Al films under current-carrying friction." Industrial Lubrication and Tribology 73, no. 10 (May 19, 2021): 1219–25. http://dx.doi.org/10.1108/ilt-07-2020-0267.

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Purpose The purpose of this paper is to compare the electrical conductivity and tribological properties of magnetron sputtered silver (Ag), copper (Cu) and aluminum (Al) thin films under conductive grease lubrication. Design/methodology/approach Three types of silver (Ag), copper (Cu) and aluminum (Al) thin films were prepared by magnetron sputtering. Current-carrying friction tests were carried out by a ball-on-plate reciprocating friction and wear tester. Scanning electron microscopy (SEM), X-ray diffraction (XRD) and energy dispersive X-ray spectroscopy (EDX) were used to observe and analyze the worn surface and cross-section morphology of the films. Findings Silver and Cu films exhibited good conductivity and tribological properties, which were mainly attributed to the synergy of the protective tribofilm generated by conductive grease, current-induced thermal effect and magnetron sputtered films effect. Al film was worn through. Large pitting storing lubricate were only found in Ag film. Cu film showed a similar surface uniformity with Ag film. Originality/value This study provides a reference for the design and application of conductive grease and investigates the current-carrying friction behaviors of magnetron sputtered films as electrical contact materials. The comparison of current-carrying friction behaviors of the three films was rarely covered in previous studies.

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25

Park, M., S. J. Krause, and S. R. Wilson. "The effects of deposition and annealing condition on the microstractural evolution of Al-Cu and Al-Cu-Si thin films." Proceedings, annual meeting, Electron Microscopy Society of America 49 (August 1991): 822–23. http://dx.doi.org/10.1017/s0424820100088427.

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Aluminum alloys (Al-Cu and Al-Cu-Si) are the most extensively used metals for interconnects in integrated circuits. Cu additions enhance electro-thermal migration resistance, but may increase corrosion susceptibility in both reactive ion etching and wet processing due to the formation of Al2Cu (θ) precipitates. Si was originally added to minimize erosion in contact windows, however it was recently found that the addition of 1.5% or 0.5% Si in Al-Cu alloy improves its corrosion resistance. θ precipitates in binary alloys have been found to occur at the Al/sublayer interface during high temperature (>200°C) deposition due to the fast surface diffusion of Cu. For the higher temperature deposition in the Al solid solution region, platelike θ precipitates were also formed at the interface and grain boundaries during a fast cooldown of wafers. However, it has not been well understood how the addition of Si in Al-Cu alters the thin film microstructure and increases the corrosion resistance. In this work, the effects of Si addition and deposition temperature on the film microstructure were studied for different alloy compositions and sublayers. The effects of thermal annealing on the interaction of Al films with Ti-W sublayer were also studied.

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26

Romig, A. D., D. R. Frear, and T. J. Headley. "High-spatial-resolution x-ray microanalysis of Al-2wt.% Cu aluminum thin films." Proceedings, annual meeting, Electron Microscopy Society of America 47 (August 6, 1989): 216–17. http://dx.doi.org/10.1017/s0424820100153051.

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Aluminum - 2 wt.% copper alloys are commonly used in thin film form as interconnect metallization lines for integrated circuits. Experience has shown that the addition of the Cu to the Al, albeit at a decrease in conductivity, makes the metallizations more resistant to failure by electromigration. However, the mechanism by which Cu increases the resistance to electromigration has never been positively identified. One theory proposes that Cu coats the Al grain boundaries (boundaries are enriched in Cu) and retards grain boundary diffusion thereby reducing electromigration. Another theory suggests that a continuous thin layer of CuAl2 forms along the boundaries also reducing grain boundary transport and therefore the tendency to electromigrate. Recently, Frear et al. have reported on a detailed set of experiments to examine these theories from a microstructural viewpoint. Here, the details of the high spatial resolution microanalysis done to support the study of Fear, et al. are reported.Al- 2wt.% Cu was magnetron sputtered onto a borosilicate glass (BSG) coated (100) Si wafer. The Al-Cu films were sputtered at room temperature from a single source under an argon atmosphere at a deposition rate of 100 nm/min. Films 400 and 800 nm thick were prepared. The films were annealed under a 15% hydrogen forming gas (reducing) at 425°C for 35 min.

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27

Saoula, Imene, Chahinez Siad, Khedidja Djedidi, Nassiba Allag, and Abdelouahad Chala. "Effect of (Al, Zn, Cu, and Sr) doping on structural, optical and electrical properties of sprayed SnO2 thin films." Acta Metallurgica Slovaca 29, no. 2 (June 20, 2023): 59–62. http://dx.doi.org/10.36547/ams.29.2.1730.

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Tin dioxide thin films deposited onto a glass substrate were prepared by spray pyrolysis technique, and then doped with different elements which are: Al, Zn, Cu, and Sr by electroplating method, these elements were chosen for their different atomic radii. XRD illustrate that all the films were polycrystalline with a tetragonal rutile structure and a strong preferred orientation of (200) plane. Uv-vis spectrophotometer specters showed that the highest average transmittance of Al/SnO2 film was about 86.77% in the visible region and the Sr/SnO2 film had the highest band gap of 3.95 eV. From the MEB images, the morphological characteristics improved when the SnO2 thin films doped with Al and Zn but the opposite happened when it doped with Cu and Sr. The four-point probe showed that the best sample was for Al/SnO2 because it had the highest electrical conductivity around 692.306 (Ω.cm) -1.

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28

WENG Wei-xiang, 翁卫祥, 于光龙 YU Guang-long, 贾贞 JIA Zhen, 李昱 LI Yu, and 郭太良 GUO Tai-liang. "Oxidation-Resistant of Cr/Cu/Al/Cr Thin Film Electrodes." Chinese Journal of Liquid Crystals and Displays 26, no. 2 (2011): 183–87. http://dx.doi.org/10.3788/yjyxs20112602.0183.

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29

Shute, C. J., and J. B. Cohen. "Determination of yielding and debonding in Al–Cu thin films from residual stress measurements via diffraction." Journal of Materials Research 6, no. 5 (May 1991): 950–56. http://dx.doi.org/10.1557/jmr.1991.0950.

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The yield strength and interfacial bonding are properties of interest for understanding void formation in thin film interconnect and subsequent failure of VLSI devices. A method is presented to examine the mechanical properties of thin polycrystalline films attached to substrates by measuring the change in thermal residual stress, due to the difference in coefficient of expansion between the film and substrate, as a function of decreasing temperature of the sample. The yield strengths of passivated 0.5, 1.0, and 2.0 μm thin films of Al–2% Cu on oxidized Si wafer substrates have been determined with this method to be 325, 170, and 120 MPa, respectively. Unpassivated films of the same thicknesses were also examined, but yielding did not occur for these films even though the residual stress reached a value of over 400 MPa. The lack of yielding in the unpassivated samples and the thickness dependence of the passivated samples is attributed to the grain size of these materials, which is less than the film thickness for the unpassivated case and greater than the film thickness after passivation. Debonding occurred in the 2 μm unpassivated sample but in none of the others, indicating a thickness dependence of the energy for delamination.

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Kandel, Hom, Milko Iliev, Nathan Arndt, and Tar-Pin Chen. "Investigation of Phonon Vibrational Modes in Ga, Al, Fe, Co, Ni, and Zn Doped (110)-Oriented PBCO Thin Films." Advances in Materials Science and Engineering 2020 (June 28, 2020): 1–8. http://dx.doi.org/10.1155/2020/5937494.

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We performed Raman scattering measurements and a comprehensive study of different types of Raman modes associated with phonon vibrations on pure and Ga, Al, Fe, Co, Ni, and Zn doped (110)-oriented PrBa2Cu3O7 (PBCO) thin films to identify the substitution of Cu (1) or Cu (2) ions in PBCO lattice. In Raman spectrum of (110)–oriented PBCO thin film, we observed four prominent Ag type Raman modes at ∼130 cm−1, ∼150 cm−1, ∼440 cm−1, and ∼520 cm−1 corresponding to Ba, Cu (2), O (2)–O (3) in-phase, and O (4) apical oxygen vibration along c-axis, respectively. The Raman mode of pure PBCO at ∼520 cm−1 softened on Ga, Al, Fe, and Co doped PBCO thin films while it remained unaffected on Zn and Ni doped PBCO thin films. We explain these results in the context of their correlation with Cu (1)–O (4) and Cu (2)–O (4) bond lengths. In addition, we observed a new Raman mode near 610 cm−1 in the Raman spectra of Ga, Al, Fe, and Co doped PBCO thin films, an infrared (IR) active mode that became Raman active when the symmetry was broken at the Cu-O chain site after the partial substitution of Cu (1) ion. Moreover, the “O (2)–O (3) in-phase Raman mode” near 440 cm−1 remained unaffected in Fe, Co, Ga, and Al doped PBCO thin films but softened in Zn and Ni doped PBCO thin films. Based on these results, we argue that Ga, Al, Fe, and Co ions replace Cu (1) ion at the Cu-O chain site, break the crystal symmetry, and produce disorder locally, whereas Zn and Ni ions replace Cu (2) ion at the CuO2 plane of the PBCO lattice structure.

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31

Arora, Swati, Y. C. Sharma, and Y. K. Vijay. "Resonant Tunnelling Diode Using Al-Se-Cu Thin Film Structure." Oxford Journal of Intelligent Decision and Data Science 2019 (2019): 1–7. http://dx.doi.org/10.5899/2019/ojids-00042.

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32

Kumaresh, K. J., P. Deepak Raj, and M. Sridharan. "Al and Cu Thin Film Capacitors for Void Fraction Measurement." Asian Journal of Applied Sciences 7, no. 8 (November 1, 2014): 809–13. http://dx.doi.org/10.3923/ajaps.2014.809.813.

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33

Chen, H., and S. M. Heald. "Glancing angle EXAFS studies of Cu-Al thin film interfaces." Physica B: Condensed Matter 158, no. 1-3 (June 1989): 658–59. http://dx.doi.org/10.1016/0921-4526(89)90427-4.

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34

Haidara, Fanta, Marie-Christine Record, Benjamin Duployer, and Dominique Mangelinck. "Solid state reactions in Al–Cu–Fe thin film systems." Intermetallics 21, no. 1 (February 2012): 62–66. http://dx.doi.org/10.1016/j.intermet.2011.09.010.

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35

Son, K. A., N. Missert, J. C. Barbour, J. J. Hren, R. G. Copeland, and K. G. Minor. "Growth and Oxidation of Thin Film Al[sub 2]Cu." Journal of The Electrochemical Society 148, no. 7 (2001): B260. http://dx.doi.org/10.1149/1.1376635.

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36

Hafner, Martina, Andrei Ionut Mardare, and Achim Walter Hassel. "Vapour phase co-deposition of Al-Cu thin film alloys." physica status solidi (a) 210, no. 5 (May 2013): 1006–12. http://dx.doi.org/10.1002/pssa.201200781.

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37

Grünwald, Eva, Robert Nuster, Günther Paltauf, Thomas Maier, Robert Wimmer-Teubenbacher, Ruth Konetschnik, Daniel Kiener, Verena Leitgeb, Anton Köck, and Roland Brunner. "Laser Ultrasonic Thin Film Characterization of Si-Cu-Al-Cu Multi-Layered Stacks." Materials Today: Proceedings 4, no. 7 (2017): 7122–27. http://dx.doi.org/10.1016/j.matpr.2017.08.006.

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38

Yang, Ying Xiang, Qing Nan Shi, and Hong Lin Tan. "Effect of Annealing Temperature on Structural and Optical Properties of (Cu, Al):ZnO Thin Film by Sol-Gel Method." Advanced Materials Research 852 (January 2014): 314–18. http://dx.doi.org/10.4028/www.scientific.net/amr.852.314.

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The (Cu,Al):ZnO thin films were prepared on glass substrates by sol-gel spin coating technique.The effect of annealing temperature on the structural and optical properties of the (Cu, Al):ZnO thin film was investigated by means of X-ray diffraction and UV-vis spectrophotometer. It has been found that the grain sizes, Optical band gap and the preferred orientation growth of (002) plane were decreased with annealing temperature. the annealing temperature also played a significant role in the blue-shifted phenomenon.

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39

Abd El-Fattah, Hanan A., Iman El-Mahallawi, Mostafa H. Shazly, and Waleed A. Khalifa. "Microstructure Evolution of NiTi Magnetron Sputtered Thin Film on Different Substrates." Key Engineering Materials 835 (March 2020): 68–74. http://dx.doi.org/10.4028/www.scientific.net/kem.835.68.

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Understanding the microstructure evolution of metal thin films on various substrates is essential for developing thin films that need specific requirements. The microstructure of thin films has been identified to be related to the mobility of the adatoms during growth. Recently, the theory of non-classical crystallisation of thin films has been introduced to explain the structure formation in chemical vapor deposition (CVD) and physical vapor deposition (PVD) processes. Much work has been conducted on CVD deposited thin films, while little data appears on PVD techniques. The effect of substrate material on the microstructure of the deposited nickel-titanium (NiTi) thin film and its optical absorbance is studied in this work. Three different substrates with identified surface conditions were used to deposit thin films of NiTi in the same chamber under the same processing conditions. The NiTi thin film was deposited using radio frequency (RF) PVD sputtering process on stainless steel (SS), aluminium (Al) and copper (Cu) substrates. The results were analysed in view of state of art structure models and mechanisms. The microstructure was studied by scanning electron microscopy (SEM) and X-ray diffraction (XRD). The optical absorbance was measured by spectrophotometery. The results have shown that the structure and morphology of the grown films have varied in all conditions. Amorphous structures were obtained for Al and Cu substrates, while crystalline structures were obtained for the stainless-steel substrate at the same sputtering conditions.

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40

Xu, Jia Xiong. "Growth of Mo Thin Films on Flexible Polymer and Metal Foil Substrates for Solar Cell Application." Applied Mechanics and Materials 670-671 (October 2014): 117–20. http://dx.doi.org/10.4028/www.scientific.net/amm.670-671.117.

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The Mo thin films have been used as the back electrodes of Cu (In,Ga)Se2and Cu2ZnSn (S,Se)4thin film solar cells. In this study, the Mo thin films were sputtered on flexible polyimide, polyethylene terephthalate, stainless steel foil, Ti foil, and Al foil substrates. The experimental results indicate that the Mo thin films with promising properties can grow on different flexible substrates. The favourable substrate material is stainless steel foil. By post-annealing, the average sheet resistance of Mo thin film on stainless steel foil substrate reduces to 2.05 Ω/sq.

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41

Yang, Ying Xiang, Hong Lin Tan, Cheng Lin Ni, and Chao Xiang. "The Structural and Optical Properties of(Cu, Al):ZnO Films." Advanced Materials Research 641-642 (January 2013): 547–50. http://dx.doi.org/10.4028/www.scientific.net/amr.641-642.547.

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Un-doped and (Cu, Al)-doped ZnO thin films were prepared by sol-gel spin coating technique on glass substrate. The effect of(Cu, Al)incorporation on the structural, morphological and optical properties of the Zinc oxide (ZnO)film was investigated by means of X-ray diffraction, scanning electron microscopy and UV-vis spectrophotometer. It has been found that the grain sizes, Optical band gap and the preferred orientation growth of (002) plane were decreased with increasing of (Cu, Al) dopants amount in ZnO films.

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42

Park, M., S. J. Krause, and S. R. Wilson. "Processing and microstructure correlations of aluminum alloys for thin-film metallizations." Proceedings, annual meeting, Electron Microscopy Society of America 48, no. 4 (August 1990): 972–73. http://dx.doi.org/10.1017/s0424820100177994.

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Aluminum alloys, such as Al-Cu and Al-Cu-Si are the most extensively used metals for interconnects in integrated circuit. The beneficial effect of the Cu addition is to increase the resistance to electromigration and hillock growth. Si is also often added to minimize the erosion in contact windows and enhance the metal corrosion resistance in the wet photoresist development process. Due to the importance of grain boundary transport in electromigration failure, factors such as grain size and grain size distribution, have an important influence on the failure threshold in conjunction with the level of Cu. In addition, the level of Cu and Si has many detrimental effects, such as microcorrosion caused by the galvanic action of Al2Cu precipitates and the occurrence of Si precipitates, which result in points of high resistance. It is not clear what deposition conditions and what quantities of Cu and Si would lead to the optimum properties, in relation to the grain size and the size and distribution of Al2Cu and Si precipitates. Reductions of Cu and Si content can help to decrease the formation of Al2Cu and Si precipitates, but it is believed that these precipitates are readily formed due to the large surface to volume ratio. In the present study, the specific correlations between processing conditions, the amount of Cu and Si additions, and the microstructure of the Al alloy thin film are evaluated for the development of an improved alloy system.

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43

Meng-Burany, X., and A. E. Curzon. "The effect of specimen tilt on back-scattered electron image contrast in scanning electron microscopy." Proceedings, annual meeting, Electron Microscopy Society of America 49 (August 1991): 506–7. http://dx.doi.org/10.1017/s0424820100086830.

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The present work concerns the back-scattered electron image contrast of a thin film of Cu64Mo36 on a silicon substrate. The contrast is defined by the ratio(1)where If and Ib are the backscattered electron signals from the film and from an adjacent bulk reference specimen. In previous work on thin sputtered films of Cu-Mo, Cu-W and Cu-Al both the film and the bulk reference specimen were perpendicular to the incident electron beam. It was found that the dependence of r on the accelerating voltage of the electron beam could be used to obtain both the thickness and the composition of the films. It is the purpose of the present work to determine whether the simple method previously used to extract the required information can be extended to include tilted specimens. As will be seen the method can be adapted to films tilted by less than 50°.

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44

CHEN, TAR-PIN, KE WU, S. Z. WANG, QI LI, BENJAMIN CHEN, UDOM TIPPARAACH, and CHI-JEN CHEN. "FINITE SIZE EFFECT ON YBCO/PBCAO AND YBCO/PBCGO NANOMETER MULTILAYERS." International Journal of Modern Physics B 27, no. 15 (June 4, 2013): 1362009. http://dx.doi.org/10.1142/s0217979213620099.

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We have fabricated (110) epitaxy YBa 2 Cu 3 O 7-δ (YBCO), PrBa 2 Cu 0.8 Al 0.2 O 7 (PBCAO), PrBa 2 Cu 0.8 Ga 0.2 O 7-δ (PBCGO) nanometer-thin films and YBCO/PBCAO, YBCO/PBCGO multilayers of a variety of film thicknesses. Electrical resistivities measured from these systems were plotted against temperatures and film thicknesses and are presented in this paper. Superconducting onset temperature Tc of the YBCO films was estimated and plotted against YBCO film thickness. Superconducting coupling length was deduced. Finite size effect and 2D to 3D transition are also discussed.

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45

Lu, Ye Bo, and Masumi Saka. "Effect of Surface Film on the Al Whisker Fabrication by Utilizing Stress Migration." Advanced Materials Research 630 (December 2012): 110–13. http://dx.doi.org/10.4028/www.scientific.net/amr.630.110.

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The effect of surface film on the Al whisker fabrication by utilizing stress migration was investigated. The sample was a thin aluminum film deposited on an oxidized silicon substrate and covered with a surface film. Aluminum oxide layer, silicon oxide layer and Cu oxide layer were used as the surface films. Al whiskers were obtained only in the samples with aluminum oxide layer and silicon oxide layer after heat treatment. It was found that both the brittle surface films and compressive stress determined the Al whisker growth.

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46

Muhunthan, N., Om Pal Singh, M. K. Thakur, P. Karthikeyan, Dinesh Singh, M. Saravanan, and V. N. Singh. "Interfacial Properties of CZTS Thin Film Solar Cell." Journal of Solar Energy 2014 (November 26, 2014): 1–8. http://dx.doi.org/10.1155/2014/476123.

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Cu-deficient CZTS (copper zinc tin sulfide) thin films were grown on soda lime as well as molybdenum coated soda lime glass by reactive cosputtering. Polycrystalline CZTS film with kesterite structure was produced by annealing it at 500°C in Ar atmosphere. These films were characterized for compositional, structural, surface morphological, optical, and transport properties using energy dispersive X-ray analysis, glancing incidence X-ray diffraction, Raman spectroscopy, scanning electron microscopy, atomic force microscopy, UV-Vis spectroscopy, and Hall effect measurement. A CZTS solar cell device having conversion efficiency of ~0.11% has been made by depositing CdS, ZnO, ITO, and Al layers over the CZTS thin film deposited on Mo coated soda lime glass. The series resistance of the device was very high. The interfacial properties of device were characterized by cross-sectional SEM and cross-sectional HRTEM.

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47

Lim, Wei Qiang, Mutharasu Devarajan, and Shanmugan Subramani. "Performance of Cu-Al2O3 thin film as thermal interface material in LED package: thermal transient and optical output analysis." Microelectronics International 35, no. 1 (January 2, 2018): 33–44. http://dx.doi.org/10.1108/mi-07-2016-0053.

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Purpose This paper aims to study the influence of the Cu-Al2O3 film-coated Cu substrate as a thermal interface material (TIM) on the thermal and optical behaviour of the light-emitting diode (LED) package and the annealing effect on the thermal and optical properties of the films. Design/methodology/approach A layer-stacking technique has been used to deposit the Cu-Al2O3 films by means of magnetron sputtering, and the annealing process was conducted on the synthesized films. Findings In this paper, it was found that the un-annealed Cu-Al2O3–coated Cu substrate exhibited low value of thermal resistance compared to the bare Cu substrate and to the results of previous works. Also the annealing effect does not have a significant impact on the changes of properties of the films. Research limitations/implications It is deduced that the increase of the Cu layer thickness can further improve the thermal properties of the deposited film, which can reduce the thermal resistance of the package in system-level analysis. Practical implications The paper suggested that the Cu-Al2O3–coated Cu substrate can be used as alternative TIM for the thermal management of the application of LEDs. Originality value In this paper, the Cu substrate has been used as the substrate for the Cu-Al2O3 films, as the Cu substrate has higher thermal conductivity compared to the Al substrate as shown in previous work.

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48

Chen, Hsien-Wei, Kai-Chieh Hsu, Yu-Chen Chan, Jenq-Gong Duh, Jyh-Wei Lee, Jason Shian-Ching Jang, and Guo-Ju Chen. "Antimicrobial properties of Zr–Cu–Al–Ag thin film metallic glass." Thin Solid Films 561 (June 2014): 98–101. http://dx.doi.org/10.1016/j.tsf.2013.08.028.

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49

Shih, W. C., and A. L. Greer. "A new precipitate phase in Al-4wt. % Cu thin-film interconnects." Journal of Electronic Materials 23, no. 12 (December 1994): 1315–23. http://dx.doi.org/10.1007/bf02649897.

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50

Venkatraman, Ramnath, and John C. Bravman. "Separation of film thickness and grain boundary strengthening effects in Al thin films on Si." Journal of Materials Research 7, no. 8 (August 1992): 2040–48. http://dx.doi.org/10.1557/jmr.1992.2040.

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We have measured stress variations with temperature as a function of film thickness and a given grain size in pure Al and Al–0.5% Cu films on Si substrates. The variation in thickness for a given grain size is brought about by using the same film and the repeated controlled growth and dissolution of a barrier anodic oxide which can be grown uniformly on the film. Stress measurements were made as a function of temperature by measuring wafer curvature after successively removing each 0.1 μm of Al film. The components of strengthening due to the film thickness and the presence of grain boundaries were separated by assuming that the flow stress of the film is simply the sum of these two components. It is found that strengthening due to film thickness varies inversely with the thickness, which is consistent with results obtained by us using laser-reflowed films in an earlier work. The Hall–Petch coefficients calculated from the strengthening due to the grain boundaries are slightly higher than those reported for bulk Al. However, it is also recognized that the variation of the flow stress as g−1, where g is the grain size, is more plausible than that predicted by the Hall–Petch relation (i.e., as g−1/2). The variations of these two components with temperature, and under tension and compression, are discussed.

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