Дисертації: "Cu-Al Thin Film"

1

Birkett, Martin. "Optimisation of the performance characteristics of Cu-Al-Mo thin film resistors." Thesis, Northumbria University, 2009. http://nrl.northumbria.ac.uk/2013/.

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This thesis presents a novel approach to the manufacture of thin film resistors using a new low resistivity material of copper, aluminium and molybdenum, which under industrially achievable optimised process conditions, is shown to be capable of producing excellent temperature coefficient of resistance (TCR) and long term stability properties. Previous developments in the field of thin film resistors have mainly centred around the well established resistive materials such as nickel-chromium, tantalum-nitride and chromium-silicon-monoxide. However recent market demands for lower value resistors have been difficult to satisfy with these materials due to their inherent high resistivity properties. This work focuses on the development and processing of a thin film resistor material system having lower resistivity and equal performance characteristics to that of the well established materials. An in depth review of thin film resistor materials and manufacturing processes was undertaken before the electrical properties of a binary thin film system of copper and aluminium were assessed. These properties were further enhanced through the incorporation of a third doping element, molybdenum, which was used to reduce the TCR and improve the electrical stability of the film. Once the desired chemical composition was established, the performance of the film was then fine tuned through optimisation of critical manufacturing process stages such as sputter deposition, heat treatment and laser adjustment. The results of these investigations were then analysed and used to generate a set of optimum process conditions, suitable for repeatedly producing thin film resistors in the 1 to 10Ω resistance range, to tolerances of less than ±0.25% and TCR values better than ±15ppm/oC.

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2

Weaver, David John. "A study of graphoepitaxially grown Al and Cu interconnects." Thesis, University of York, 1998. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.265566.

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3

Haidara, Fanta. "Etude des mécanismes de formation de phases dans des films minces du système ternaire Al-Cu-Fe." Thesis, Aix-Marseille 3, 2011. http://www.theses.fr/2011AIX30008.

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Les mécanismes de formation de phases dans des films minces du système ternaire Al-Cu-Fe et des systèmes binaires Al-Cu, Al-Fe et Cu-Fe ont été étudiés. Dans chacun des systèmes, plusieurs échantillons avec des compositions distinctes ont été préparés par pulvérisation cathodique. Des couches d’aluminium, de cuivre et de fer ont été déposées séquentiellement sur des substrats de silicium oxydé et ont été traités thermiquement par différentes méthodes puis caractérisés. Des mesures de diffraction de rayons X et de résistivité in-situ ont été effectuées pour suivre la formation des phases. Des recuits thermiques suivis de trempe ont été réalisés et les échantillons ont été caractérisés par diffraction des rayons X. L’analyse enthalpique différentielle a également été utilisée ainsi que des mesures simultanées in-situ de résistivité et de diffraction des rayons X. L’ensemble des résultats obtenus nous a permis de proposer des mécanismes de formation de phases pour chacun des échantillons étudiés et en utilisant des modèles théoriques de croissance de phases nous avons pu déterminer des données cinétiques sur la formation de phases dans ces films
The mechanisms of phase formation in thin films have been studied in the Al-Cu, Al-Fe, Fe-Cu and Al-Cu-Fe systems. Several samples with different compositions have been prepared by sputtering. Aluminium, copper and iron layers were deposited onto oxidized silicon substrates, they were heat treated and characterized by using several techniques. In situ X-ray diffraction and resistivity measurements were used to follow the phase formation. Thermal annealings followed by quenching have also been carried out to get additional information.Differential Scanning Calorimetry and coupled in-situ resistivity and X-ray diffractionmeasurements were performed. The whole results allowed us to suggest a mechanism of phase formation for each sample and by using theoretical models of growth we determined kinetic data on the phase formation

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4

Burger, Sofie [Verfasser]. "High Cycle Fatigue of Al and Cu Thin Films by a Novel High-Throughput Method / Sofie Burger." Karlsruhe : KIT Scientific Publishing, 2013. http://www.ksp.kit.edu.

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5

Aninat, Rémi. "Study of Cu(In,Al)Se2 thin films prepared by selenisation of sputtered metallic precursors for application in solar cells." Thesis, Northumbria University, 2012. http://nrl.northumbria.ac.uk/11373/.

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Cu-In, Cu-Al and Cu-In-Al metallic precursor layers were deposited using radio-frequency magnetron sputtering and selenised to produce thin films of CuInSe2 (CIS), CuAlSe2 (CAS) and CuIn1-xAlxSe2 (CIAS), respectively. The selenisation stage of this 2-stage process was carried out in a tube furnace (TF) or a rapid thermal processor (RTP) in the presence of elemental Se, either deposited on top of the precursor film or provided from an external source in the chamber, in order to fabricate the chalcopyrite material. The aim was to produce single phase, device quality CIS, CAS and CIAS for use as an absorber layer material in thin film photovoltaic solar cells. Profilometry performed on the as-deposited Cu-In-Al metallic precursors showed an important increase in surface roughness compared to the Cu-In and Cu-Al precursors. This was found to be due to the preferential formation of Cu9(In,Al)4, which stoichiometry led the excess In to form island-shaped In phases at the surface of the bulk, while only Cu2In and CuIn2 formed in Cu-In precursors. Regarding the selenisation, temperatures ranging from 250°C to 550°C were used, and the resulting samples were investigated using scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDS), X-ray diffraction (XRD), secondary ion mass spectroscopy (SIMS) and glow-discharge optical emission spectroscopy (GD-OES). Thin films of single phase CIS and CAS were successfully produced with energy band gaps of 0.99 eV and 2.68 eV, respectively. However the incorporation of Al proved to be difficult. The results showed that no incorporation of the Al into the chalcopyrite lattice was achieved in the samples selenised in the RTP, which was believed to be due to the oxidation of the element Al into amorphous Al2O3. In the tube furnace, possibly due to lower levels of oxidation, incorporation occurred more readily but Al and In segregated towards the back and front of the layer, respectively. The causes of the segregation were studied and solutions to avoid it developed, resulting under certain conditions in successful production of CuIn1-xAlxSe2. Samples were tested in a photoelectrochemical cell and showed (apparent) external quantum efficiency values comparable to a CuInSe2 (CIS) sample used as a standard.

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6

Jeliazova, Yanka Martcheva. "The growth of multilayer systems, consisting of thin oxidic (Ga2O3, Al2O3) and metallic (Ga, Al, Co, Au) films on Ni(100) and Cu(111) surfaces." [S.l. : s.n.], 2002. http://deposit.ddb.de/cgi-bin/dokserv?idn=96635611X.

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7

Ross, Nick. "Interfacial Electrochemistry of Cu/Al Alloys for IC Packaging and Chemical Bonding Characterization of Boron Doped Hydrogenated Amorphous Silicon Films for Infrared Cameras." Thesis, University of North Texas, 2016. https://digital.library.unt.edu/ark:/67531/metadc849696/.

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We focused on a non-cooling room temperature microbolometer infrared imaging array device which includes a sensing layer of p-type a-Si:H component layers doped with boron. Boron incorporation and bonding configuration were investigated for a-Si:H films grown by plasma enhanced chemical deposition (PECVD) at varying substrate temperatures, hydrogen dilution of the silane precursor, and dopant to silane ratio using multiple internal reflection infrared spectroscopy (MIR-IR). This study was then confirmed from collaborators via Raman spectroscopy. MIR-IR analyses reveal an interesting counter-balance relationship between boron-doping and hydrogen-dilution growth parameters in PECVD-grown a-Si:H. Specifically, an increase in the hydrogen dilution ratio (H2/SiH4) or substrate temperature was found to increase organization of the silicon lattice in the amorphous films. It resulted in the decrease of the most stable SiH bonding configuration and thus decrease the organization of the film. The new chemical bonding information of a-Si:H thin film was correlated with the various boron doping mechanisms proposed by theoretical calculations. The study revealed the corrosion morphology progression on aluminum alloy (Al, 0.5% Cu) under acidic chloride solution. This is due to defects and a higher copper content at the grain boundary. Direct galvanic current measurement, linear sweep voltammetry (LSV), and Tafel plots are used to measure corrosion current and potential. Hydrogen gas evolution was also observed (for the first time) in Cu/Al bimetallic interface in areas of active corrosion. Mechanistic insight that leads to effective prevention of aluminum bond pad corrosion is explored and discussed. (Chapter 4) Aluminum bond pad corrosion activity and mechanistic insight at a Cu/Al bimetallic interface typically used in microelectronic packages for automotive applications were investigated by means of optical and scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDX) and electrochemistry. Screening of corrosion variables (temperature, moisture, chloride ion concentration, pH) have been investigated to find their effect on corrosion rate and to better understand the Al/Cu bimetallic corrosion mechanism. The study revealed the corrosion morphology progression on aluminum alloy (Al, 0.5% Cu) under acidic chloride solution. The corrosion starts as surface roughening which evolves into a dendrite structure and later continues to grow into a mud-crack type corrosion. SEM showed the early stage of corrosion with dendritic formation usually occurs at the grain boundary. This is due to defects and a higher copper content at the grain boundary. The impact of copper bimetallic contact on aluminum corrosion was explored by sputtering copper microdots on aluminum substrate. Copper micropattern screening revealed that the corrosion is activated on the Al/Cu interface area and driven by the large potential difference; it was also seen to proceed at much higher rates than those observed with bare aluminum. Direct galvanic current measurement, linear sweep voltammetry (LSV), and Tafel plots are used to measure corrosion current and potential. Hydrogen gas evolution was also observed (for the first time) in Cu/Al bimetallic interface in areas of active corrosion. Mechanistic insight that leads to effective prevention of aluminum bond pad corrosion is explored and discussed. Micropattern corrosion screening identified hydrogen evolution and bimetallic interface as the root cause of Al pad corrosion that leads to Cu ball lift-off, a fatal defect, in Cu wire bonded device. Complete corrosion inhibition can be achieved by strategically disabling the mutually coupled cathodic and anodic reaction cycles.

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8

Wu, Wei-Jung, and 巫偉融. "Preparation and characterization of Cu(In,Al)Se2 thin film." Thesis, 2010. http://ndltd.ncl.edu.tw/handle/72348410582631819120.

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Анотація:

碩士
國立中山大學
材料與光電科學學系研究所
98
Polycrystalline Cu(In,Al)Se2 films were deposited by four-source evaporation of Cu, In, Al, and Se using Knudsen type sources in which the elemental fluxes were coincident onto soda lime glass substrates. The single-phase films with composition of Cu:In:Al:Se = 28:15:9:48 which were confirmed by X-ray diffraction and micro-Raman spectroscopy were deposited at substrate temperature of 560℃. Secondary phases were observed when temperature of substrate is below 560℃ due to incompletely reaction. Under fixed effusion flux, the value of Cu/(In+Al) becomes larger as temperature of substrate increase. However, the value of Al/(In+Al) keeps nearly constant as temperature increase. The band gap is 1.53 eV derived from the result of spectrophotometer. The room temperature resistivity, Hall mobility and carrier concentration of the films are 0.28 Ωcm, 24.63 cm2V-1s-1 and 1.27x1019 cm-3 respectively. And the conductive type is p-type. By the way, we try to grow Cu(In,Al)Se2 film in the presence of an Sb beam at substrate temperature of 440℃. After the addition of an Sb beam, surface morphology become smooth and compact, but there is no significant grain growth. No matter an Sb beam adds or not, secondary phases were observed in both case due to the low temperature of substrate.

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9

Tien, Hung-Chi, and 田宏吉. "Improvement of Against Oxidation and Electrical Properties of Passivated Cu(Al) Thin Film." Thesis, 2010. http://ndltd.ncl.edu.tw/handle/t78j23.

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碩士
國立虎尾科技大學
材料科學與綠色能源工程研究所
98
In this study, the characteristics of Cu(Al) alloy thin films and its applications as the materials of interconnect were investigation. Copper has much lower electrical resistivity and higher electron migration (EM) resistance than that of aluminum. The copper suffers from poor adhesion with glass substrated and self-passivation layer after anneal. This work aims at preparing a low resistivity, high adhesion, oxidation resistance and self-passivated Cu(Al) alloy thin film, which will be potentially as gate material on TFT-LCD and interconnection on microelectronics. Cu1-xAlx (x = 1.75-7.50 at.%) films were prepared by a co-sputtering method and were subsequently annealed by a RTA in a temperature range of 200°C - 600°C for 10-30 min in oxygen ambient. Self-passivated Cu thin film in the form of Al2O3/Cu/SiO2 was therefore obtained because Al diffused easily from matrix to the surface and reacted with oxygen by forming, thus oxidation of copper film can be prevented. The formation of Al2O3/Cu/SiO2 improved the resistivity, adhesion to SiO2, oxidation resistance and passivative behavior of the studied film. The Cu (1.75 at.% Al) thin film had the lowest resistivity of 3.04 μΩcm, and exhibited a superior passivated behavior among the studied films.

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10

Kuo-ChanHuang and 黃國展. "Investigation of Cu(In,Al)Se2 thin film solar cell fabricated by using electrodeposition technique." Thesis, 2015. http://ndltd.ncl.edu.tw/handle/y5vw25.

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博士
國立成功大學
微電子工程研究所
103
In this dissertation, we exploit the low cost electrodepositon technique to investigate the fabrication of Cu(In,Al)Se2 thin film solar cell. The research content is divided into four segments. In the first segment, the cyclic voltammetric studies are used to realize the element’s and compounds reduction potentials and identify a suitable potential as co-electrodeposition. In combination with the XRD analysis, chemical reaction mechanism for presuming the formation routes of quaternary Cu(In,Al)Se2 films are defined. Furthermore, It is found that the SDS additive promotes the deposited potential of each element closing to each other for a better co-elecorodeposition environment, and simultaneously change the nucleation mechanism of Cu(In,Al)Se2 films from instantaneous nucleation to progressive nucleation. This feature is helpful to obtain a smooth precursor Cu(In,Al)Se2film and round-like structure. In addition, we find the stoichiometry of Cu(In,Al)Se2 film changes from Cu-rich to Cu-poor type and the morphology of Cu(In,Al)Se2 film transfers from round-like structure to cauliflower-like structure by increasing deposited potential. In the second segment, we focus on the adjustment of stoichiometry and optical energy band gap of Cu(In,Al)Se2 films. By adjusting the Al and In concentration is solutions, the ratio of Al to (Al+In) in Cu(In,Al)Se2 films can be successfully controlled from 0.21 to 0.42, and the corresponding optical energy band gap of Cu(In,Al)Se2 films can be varied from1.17 eV to 1.48 eV to match with optimum band gap value for the solar spectrum. Furthermore, X-ray diffraction (XRD) patterns reveal three preferred growth orientations along the (112), (204/220), and (116/312) planes for all species. In the third segment, we focus on the surface morphology of Cu(In,Al)Se2 films and the relationship between precursor Cu(In,Al)Se2 films and post-annealed Cu(In,Al)Se2 films. The nucleation mechanism of electrodeposited Cu(In,Al)Se2 films change from instantaneous nucleation to progressive nucleation is observed by increasing the copper concentration. The research results exhibit that precursor Cu(In,Al)Se2 films had roughly cauliflower-like and triangular structures with Cu-poor composition at instantaneous nucleation mechanism, whereas smooth and round structures with Cu-rich composition at progressive nucleation mechanism. After post-annealing treatment, the surface morphology of Cu-rich Cu(In,Al)Se2 films shows high quality with compact structures and large grains, that is more beneficial to be the absorber layer of solar cell. A 1.96% efficient Cu(In,Al)Se2 thin film solar cell fabricated by electrodeposition technique is first time achieved and publish in international journal. The corresponding values of open-circuit voltage (Voc), short-circuit current (Jsc), fill factor (FF), Rsh and Rs are 0.189 V, 29.21 mA/cm2, 35.4%, 125Ω and 2.82Ω, respectively. In the fourth segment, the binary structure precursor Cu(In,Al)Se2 films are utilized to improve the surface morphology and of Cu(In,Al)Se2 films and investigate the characteristics of CdS and Cu(In,Al)Se2 interface. It is found that the upper Cu–Se compounds in binary structure can form a liquid phases during the post-annealing process, which enhances elemental migration and promotion of large grains and smooth surface formation and reduction of RMS roughness less than 100 nm. The subsequently deposition of CdS film on binary structure Cu(In,Al)Se2 films exhibit good spreadability and smoothness, leading to efficiently diminish the distribution of leakage current paths. The dark current–voltage characteristics of the CdS/CIAS heterojuncions shows that the reverse dark current density is decreased by approximately one order of magnitude from 4.02 x 10-4 A/cm2 (single structure) to 4.26 x 10-5 A/cm2 (binary structure). Furthermore, the conversion efficiency of CIAS solar cells is enhanced from 0.52 % (single structure) to 1.44 % (binary structure) with increase in Voc and Jsc.

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11

Hong, Wei-Cheng, and 洪偉城. "Study on the Alloy Bulks and Thin Film properties of Al-Co-Cu-Sn-Ti Equal-Mole Alloys." Thesis, 2004. http://ndltd.ncl.edu.tw/handle/36702286434826442743.

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Анотація:

碩士
中國文化大學
材料科學與製造研究所
92
This thesis is according to the concept of equal-mole multi-principal alloys by Dr.Ye. Using this concept to compound the elements of Al,Co,Cu,Sn,Ti into equal-mole alloys. Five 4-component equal-mole alloys and one 5-component equal-mole alloy were selected for this paper equal-more alloys. We proceed to research of microstructures, analysis of phases, thermal property, the hardness and thermal electric property. However, AlCuSnTi had the best properties among these alloys. It is a four phase equal-mole alloy and this alloy was selected to cast it into target. Further we take it thin film sputtering and analysis of its property. The results of Al-Co-Cu-Sn-Ti equal-mole alloys showed: (1)They have higher hardness values, because the alloys contained different element, atom size was different and coursed solid-solution strengthening. Therefore, equal-mole alloys had higher hardness than that of tradition alloys. Under as-cast state, AlCoCuTi alloy and AlCoCuSnTi alloy were HV698 and HV368. (2) Respectively, The seebeck coefficient values of equal-mole alloys were not good enough. In this study, the maximum seebeck coefficient values of AlCoCuTi alloy was 25.7μv/k. (3) The alloys have nano grain structure from TEM observing, and the grain size is less than 10nm. AlCoCuTi and AlCoCuSn alloys had super-lattice structures. (4) In thin film sputtering, increase the power of sputtering or flow rate of Argon, it could improve the deposition rate of thin film.

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12

Chu, Jia-Hong, and 朱嘉鴻. "Microstructure, Thermal, Mechanical and Antimicrobial Properties in Zr-Cu-Ni-Al Thin Film Metallic Glass via Processing Temperature Control." Thesis, 2013. http://ndltd.ncl.edu.tw/handle/69051543404337407936.

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Анотація:

碩士
國立清華大學
材料科學工程學系
101
Zr-based thin film metallic glass (TFMG) exhibiting the unique properties of good glass forming ability (GFA), corrosion resistance, and biocompatibility can be applied in various novel fields of industries. In addition, an ultra smooth surface is obtained with the TFMG coatings, which is beneficial to modify the surface condition of stainless steel and can be extended to medical appliances such as surgical blades and micro-surgery scissors. Since the thin film materials are customarily employed to biomedical applications and micro-electro-mechanical system (MEMS), the improvement of mechanical properties and functionality of thin film metallic glass is imperative. The aims of this study are to fabricate the antimicrobial TFMG coatings onto SUS304 plates and to investigate the characteristics of coatings with various substrate temperatures. The amorphous matrix and cluster structure are slightly affected by the processing temperatures due to high cooling rate during deposition and superior glass-forming ability (GFA). All the coatings exhibit similar structural and thermal properties, yet the hardness and elastic modulus can significantly increase to 7.1 GPa and 135 GPa, respectively, with increasing the processing temperature up to 400 oC, well above the values of 4.7 GPa and 109 GPa at room temperature. The enhancement of mechanical properties are attributed to the shortening of average atomic distance, the increase of the short range ordered clusters and the vanish of free volumes. Liquid culture methods and plate counting methods are used to assess the antimicrobial performance of specimens. The antimicrobial rate against Escherichia coli (E. coli) and Staphylococcus aureus (S. aureus) under JIS standard is over 99%. The results show that the surface of SUS 304 stainless steel substrate can be modified with deposited Zr-Cu-Ni-Al TFMG, and their improved antimicrobial efficacy against those bacteria is attributed to their amorphous rough surface, hydrophobic properties and released copper ion. In addition, the phenomenon of interaction between TFMG and bacteria has also been discussed. The TFMG developed in this study with adequate hardness, good glass forming ability and antimicrobial efficiencies can be used as a promising candidate to improve the surface properties of the medical appliances and also to reduce the possibility of nosocomial infection.

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13

Chen, Pao-Sheng, and 陳寳升. "Doping of Tantalum and Nitrogen in Zr-Cu-Al-Ag Thin Film Metallic Glass for Improved Thermal and Mechanical Properties." Thesis, 2012. http://ndltd.ncl.edu.tw/handle/49467610135590179692.

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Анотація:

碩士
國立清華大學
材料科學工程學系
100
Owing to the unique properties, such as excellent mechanical performance, and nano-scale surface roughness, metallic glass can be applied in various novel fields. Meanwhile, the improvement of thermal stability and hardness is the common target in these applications. Minor alloying is an effective method to enhance the thermal and mechanical properties of metallic glasses. Different from elements used to be doped into metallic glass, the role nitrogen atoms play in metallic glass is quite distinct and critically important, owing to its strong electronegativity and small atomic radius. In this work, an alternative class of metallic glass is developed. By adding nitrogen into Zr-Cu-Al-Ag TFMG, the configuration energy of short range structure is greatly modified. From the viewpoint of thermal behavior, the evolution of Tg and elastic modulus with nitrogen could be well correlated, implying significant effect of nitrogen atoms on the potential energy landscape (PEL) of the TFMGs. Besides, more amounts of nitrogen addition lead to the increase of short range order structure in the amorphous matrix. That is, most metallic atoms are strongly attracted by nitrogen, forming the nitrogen-centered cluster, in which more energy is required to cause plastic deformation. On the other hand, a meta-stable state with lower energy is attained as indicated by the much higher Tx than normal Zr-based metallic glasses. However, the amorphicity region of nitrogen in Zr-Cu-Al-Ag metallic glass is not wide enough, restricting the enhancement amount of thermal and mechanical performances. By incorporating Ta firstly, the competing ZrN crystalline phase is destabilized, leading to the wider amorphicity region of nitrogen in Ta-Zr-Cu-Al-Ag TFMG. As a result, hardness over 10 GPa, Tg near 800 K, and supercool liquid region as wide as 112K is achieved in the nitrogen-doped Ta-Zr-Cu-Al-Ag TFMG.

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14

Tu, Wei-Ting, and 涂維庭. "A Study of t a-Ge/Al and a-Ge/Cu bilayer Recording Thin Film for Blue-ray Write-once Disk." Thesis, 2008. http://ndltd.ncl.edu.tw/handle/35252054279063153367.

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Анотація:

碩士
國立中興大學
材料科學與工程學系
96
In this study, a-Ge(15nm)/Cu(5nm), a-Ge(20nm)/Cu(5nm) and a-Ge(10nm)/Al(10nm) bilayer recording film for the write-once blue-ray disc were prepared by an ion beam assisted deposition system(IBAD). Form the results of thermal analysis, the reflectivity of the a-Ge(15nm)/Cu(5nm) bilayer recording film showed a first-step increase between room temperature and 2200C, and showed a second-step increase between 3000C and 3250C. The results of GIAD and TEM confirmed that the first-step increase of reflectivity was attributed to formation of Cu3Ge, and the second-step one was caused by the crystallization of amorphous germanium. The reflectivity the of a-Ge(10nm)/Al(10nm) bilayer recording film showed an obvious change at temperatures between 4000C and 4500C , and the change of reflectivity was caused by the crystallization of amorphous germanium. The results of AES, showed that Cu and Ge undergo inter-diffusion after annealing. Inter-diffusion of Ge and Al atoms took place at the as-deposited stage, and present layer exchange phonemes after annealing. The activation energy for crystallization of the a-Ge in a-Ge(15nm)/Cu(5nm) bilayer recording film was about 2.75±0.15eV and that of the a-Ge in a-Ge(20nm)/Cu(5nm) bilayer recording film was about 2.23±0.24eV. It is found that the compressive stress of the a-Ge(20nm)/Cu(5nm) bilayer recording film is smaller than that of the a-Ge(15nm)/Cu(5nm) bi-layer recording film which has less heat loss during the releasing of strain energy. Therefore, it is easier to break the bonding energy for diffusion and hence a lower activation energy for crystallization is obtained. The optical properties revealed that a-Ge(15nm)/Cu(5nm), a-Ge(20nm)/Cu(5nm) and a-Ge(10nm)/Al(10nm) bilayer recording films exhibit sufficient high absorbance, reflectivity, optical contrast at blue ray wavelength, and fulfill the requirements for the write-once blue ray disk.

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15

Chen, I.-Ching, and 陳怡靜. "1.Study of Electron Injection Layer Containing Lithium Acetate 2.Study and Characteristics of Al-Cu Thin Film and Its Applications in Organic Light-Emitting Devices." Thesis, 2004. http://ndltd.ncl.edu.tw/handle/02963542074355805289.

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16

Ruo-PingChang and 張若蘋. "Study of Cu(In,Al)Se2 related thin films for photodetector applications." Thesis, 2013. http://ndltd.ncl.edu.tw/handle/94233279331069661159.

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Анотація:

博士
國立成功大學
微電子工程研究所碩博士班
101
In this dissertation, we investigate Cu(In,Al)Se2 related thin films as absorption layer in photodetector. By modifying the concentration of Cu, In, and Al in the precursor of CuInAl alloy and using appropriate selenization or sulfurization process, we obtain Cu(In,Al)Se2 or Cu(In,Al)S2 thin films with suitable bandgap for near-infrared (NIR) or ultraviolet (UV) photodetector, respectively. The thesis contents have three distinct subjects. In the first subject, metal-semiconductor-metal (MSM) NIR photodetector is studied. In the second subject, the distinction of detecting schemes between MSM and nano-structured NIR photodetector is evaluated. Finally, we focus on the characteristics of Cu(In,Al)S2 thin film and its applications for UV photodetector. In the first subject, a novel application of Cu(In,Al)Se2 thin film for MSM NIR photodetector is demonstrated. Cu(In,Al)Se2 materials have a high optical absorption coefficient, high quantum efficiency and high conversion efficiency, so they are attractive candidates for photodetector. By adjusting the ratio of Al/ In+Al from 0 to 0.5, the corresponding bandgap of the Cu(In,Al)Se2 thin film are 1.02-1.7 eV, which are within the range of NIR wavelength (700-2500 nm). We have achieved a single phased polycrystalline Cu(In,Al)Se2 thin film with smooth surface and super large (2-5 μm) grains by using optimal selenization process. The MSM finger spacing and grain size of the film play an important role on the photocurrent amplification. The photodetector with 5-μm electrode spacing demonstrated a four-order of magnitude in photocurrent amplification due to fewer grain boundaries. The photo response data suggest that the Cu(In,Al)Se2 NIR photodetectors have a cut-off frequency near 790 nm and is in agreement with the results of the photoluminescence (PL) analysis. In the second subject, we demonstrate nano-structured Cu(In,Al)Se2 NIR photodetectors. The Cu(In,Al)Se2 NIR photodetectors were fabricated on ZnO nanowires/ZnO/Mo/ITO glass substrate. Cu(In,Al)Se2 thin film acted as a sensing layer and sparse ZnSe nanowires, which converted from ZnO nanowires after selenization process, were embedded in the Cu(In,Al)Se2 thin film to improve the amplification performance of the NIR photodetectors. Two detection schemes, a plain Al-Cu(In,Al)Se2-Al MSM structure and a vertical structure with Cu(In,Al)Se2/ZnSe nanowires annular p-n junction, are studied. The nano-structured NIR photodetector demonstrate two orders of magnitude for the annular p-n junction and one order of magnitude for the MSM structure in photocurrent amplification. The nano-structured photodetector with annular p-n junction exhibits a better amplification because of fewer grain boundaries between sensing electrodes, nano-structured detection scheme having a shorter distance for carrier collections, and carrier generated near the p-n junctions. The responsivities of the photodetectors using both sensing structures have the same cut-off frequency near 790 nm. In the third subject, we study the characteristics of Cu(In,Al)S2 thin film and its application to UV photodetectors using MSM and plain p-n junction sensing structures. CuAlS2-based materials have a wide direct bandgap, rather low melting point, high absorbance of over 90% in the ultraviolet region, and a low reflectance range of -2.1%-21% in near ultraviolet region. Consequently, they have potential to be used in UV photodetectors. By replacing Al with a small amount of In in a CuAlS2 thin film, the bandgap of Cu(In,Al)S2 thin film can be adjusted to be within the UV-A radiation range of 320-400 nm. Formation of Cu(In,Al)S2 thin film suitable for UV detection is a challenging task. We realized the film using rapid thermal annealing and sulfurization process. The I-V characteristics also show that the photocurrent amplification via a plain p-n junction is better than that of a plain MSM structure. In addition, the I-V characteristics with 5-μm electrode spacing are superior to that of the 10-μm finger spacing for the MSM-structured UV photodetector.

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17

Tsai, Ming-Wei, and 蔡明威. "Characterization of Cu-Al-O Thin Films Annealed at High Temperature under Controlled Atmosphere." Thesis, 2009. http://ndltd.ncl.edu.tw/handle/36402855961222351532.

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碩士
國立高雄應用科技大學
化學工程與材料工程系
97
In this study, Cu-Al-O films were annealed at high temperature under various atmosphere and then the microstructural changes and the related properties of the films are also examined. The Cu-Al-O films were deposited onto silicon substrates by using dc reactive sputtering technique. After that, the films were annealed at 500℃ to 1000℃ for 2h under different atmospheres which consisting of the different pO2. The as-deposited Cu-Al-O films were amorphous. When the films were annealed in N2, the CuO and CuAl2O4 were appeared between 500℃ and 700℃, and the single CuAlO2 phase was showed up above 800℃. The CuO and CuAl2O4 existed in the whole annealing temperature in air and O2.The phase changes could be explained by thermodynamic reason. The surface and cross sectional morphologies of the films were examined by field-emission scanning electron microscope. The results indicated that the grain growth occurred with annealing temperature. The optical bandgap of CuAlO2 phase was 3.32 eV determining by photoluminescence. The CuAlO2 was p-type conductivity and the electrical conductivity was 0.035 S/cm, respectively.

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18

Hirano, Kei, and 平野惠. "The preparation of Cu(In,Al)Se2 thin films using selenization of R.F. magnetron sputtering Cu-In-Al metal precursors for solar energy application." Thesis, 2013. http://ndltd.ncl.edu.tw/handle/83043685648163962524.

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碩士
長庚大學
化工與材料工程學系
101
In this study, Cu-In-Al-Se semiconductor thin films were grown on the soda-lime glass substrates and indium-tin-oxide-coated glass substrates using selenization of R.F. magnetron sputtered Cu-In-Al metal precursors. The effect of Al/(In+Al) molar ratio in samples on the structure, physical, optical, electrical and electrochemical properties of the samples were investigated. X-ray diffraction pattern of samples revealed that samples were all chalcopyrite CuInSe2 phase. With a decrease in the sputtering time of indium target, the molar ratio of Al/(In+Al) in samples were increasing, which were in the range of 0.26 ~ 0.56. The crystal size of samples were increased with increasing of Al/(In+Al) molar ratio in samples when the Al/(In+Al) in samples were in the range of 0.26-0.40. However, when the molar ratio of Al/(In+Al) in samples above 0.4, the crystal size of samples became smaller, and had some large crystals observed on the surface of sample. Electrical and optical analysis of samples showed that all samples were p-type semiconductors, and the direct energy band gap of the samples varied in the range of 0.86 ~ 1.08 eV. Maximum photo-enhanced current density of sample reached to 5.88 mA/cm2 with the external bias kept at -1.5 V vs. Ag/AgCl reference electrode in aqueous H2SO4 solution.

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19

Chien-TingChen and 陳建廷. "Study of electrodeposition of CuAlSe2 and Cu(In,Al)Se2 thin films with triethanolamine as the complexing agent." Thesis, 2014. http://ndltd.ncl.edu.tw/handle/9cvb96.

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碩士
國立成功大學
化學系
102
In our experiments, CAS and CIAS were deposited on ITO glass from chloride electrolytes by the method of co-electrodeposition. The parameters include: individual ion concentration, annealing temperature and annealing time, TEA concentration, deposition potential and deposition time. Among all conditions, the optimum condition was 5 mM CuCl2 + 30 mM AlCl3 + 22 mM SeO2 + 0.2 M TEA deposited at pH 2.50 and then under annealing at 300 °C for 1.0 hr. Current density, particle size, thickness and band gap were found to be affected by the deposition potential. The crystal structure, compositions and morphologies of the deposited thin films were determined by X-ray powder diffractometer, energy dispersive spectrometer and scanning electron microscope, respectively. X-ray diffraction patterns revealed the peak intensities of the deposits were altered when the parameters mentioned above changed. From the analysis of EDS, the atomic ratios of Se in the films of deposits were discovered lower than the stoichiometric ratio. This phenomenon would narrow down the band gap, which can be calculated from formulas. To investigate the optical properties, transmittance and reflectance of the films could be examined by UV-VIS-NIR-Spectrophotometer, and it would cause different absorption coefficients which were calculated from formulas. Overall, the absorption coefficient of the deposited films was as high as 104 cm-1, demonstrates that the films are potential absorbing materials because it possesses strong sunlight-absorbing characteristics.

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20

Liang, Shoudeng. "MAXIMUM recent implementation and application to the study of corrosion induced microstructures in thin films of Al-Cu-Si metallization /." 1994. http://catalog.hathitrust.org/api/volumes/oclc/31535852.html.

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Thesis (Ph. D.)--University of Wisconsin--Madison, 1994.
Typescript. eContent provider-neutral record in process. Description based on print version record. Includes bibliographical references (leaves 166-178).

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21

Fan, Miao Hsuan, and 范妙璇. "The study of Cu(In,Al)S2 thin films prepared using the sulfurization of thermal evaporated method and their photoelectrochemical properties." Thesis, 2012. http://ndltd.ncl.edu.tw/handle/57698346673971204114.

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Анотація:

碩士
長庚大學
化工與材料工程學系
100
In this study, the Cu(In,Al)S2 semiconductor thin films were deposited on soda-lime glass substrates and indium-tin-oxide(ITO) using the sulfurization of thermal-evaporated Cu-In-Al metal alloys. The effect of the Al/(In+Al) molar ratio in Cu(In,Al)S2 samples on the structural, optical and electrical properties of the thin film were investigated. X-ray diffraction pattern of samples revealed that samples were chalcopyrite Cu(In,Al)S2 phase. With an increase in the content of Al level in the Cu(In,Al)S2 thin film, the peaks in XRD patterns of samples shifted to higher angles and the intensities of peaks in XRD patterns decreased. Sample (a)~(e) were nearly the stoichiometric Cu(In,Al)S2. The thicknesses and direct band gaps of the Cu(In,Al)S2 samples were in the ranges of 1769~1863nm and 1.39~1.42 eV, respectively. The photo-enchanced current density of samples ranged from 0.07 to 0.6 mA/cm2 with the external bias kept at -1 V vs. Ag/AgCl reference electrode in aqueous K2SO4 solution. All samples are p-type semiconductors. The carrier concentration of samples varied from 6.23 x 1016 ~1.11 x 1014 cm-3 obtained using Hall measurement. The mobility of samples increased with an increase in Al/(In+Al) molar ratio in samples. The Solar cell with glass/Mo/ Cu(In,Al)S2/ In2S3/i-ZnO/AZO structure gaves the Voc of 0.18 V, the Jsc of 18.43 mA/cm2, the FF of 0.284, and conversion efficiency of 0.948%. The photo-enchanced current density of samples ranged from 0.02 to 1.4 mA/cm2 with the external bias kept at -1 V vs. Ag/AgCl reference electrode in aqueous K2SO4 solution.

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22

Sou-Hui, Hsiao, and 蕭受惠. "Studies on Inherent Internal Friction of TiNiCu Shape Memory Alloys and Surface Properties of Cu-Al-O Thin Films Deposited on 316L Stainless Steel." Thesis, 2014. http://ndltd.ncl.edu.tw/handle/27074753103124863414.

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Анотація:

碩士
國立宜蘭大學
化學工程與材料工程學系碩士班
102
The first part of this study is to investigate the inherent internal friction of TiNiCu shape memory alloys. Ti50Ni50-xCux(x≥10) shape memory alloys (SMAs) with (IFPT+IFI)B2→B19 and (IFPT+IFI)B19→B19’ peaks both exhibited better damping capacity than the Ti50Ni45Cu5 SMA with a (IFPT+IFI)B2→B19’ peak did, because the twinning shear values of the B19 martensite were much lower than that of the B19’ martensite. Compare with other Ti50Ni50-xCux SMAs with higher Cu contents, the Ti50Ni40Cu10 SMA was more suitable for high-damping applications under isothermal conditions, because it had both the advantages of acceptable inherent internal friction and adequate workability. The second part of this study is to investigate the surface properties of Cu-Al-O thin films deposited on 316L stainless steel. Electrochemical results showed that the 316L stainless steel possessed higher Ecorr and Ebr values, lower icorr after being coated with CuAlO2 films, the CuAlO2 coatings significantly improved the surface corrosion resistance properties of 316L stainless steel, even though the film thickness was only 100 nm. Cu-Al-Ca-O thin films with higher Al/Cu ratios exhibited lower average icorr values and higher Ebr values, indicating that the corrosion resistance of Cu-Al-Ca-O films increases with increasing of the Al/Cu ratios. The bovine serum albumin (BSA) assay results revealed that the trend of the protein adsorption of the 316L stainless steel is not significant with the CuAlO2 coatings. The Cu-Al-Ca-O thin film deposited on 316L stainless steel with higher Al/Cu ratios exhibites more protein adsorption in the BSA tests. Therefore, further surface modifacations for CuAlO2 and Cu-Al-Ca-O films are required for their pratical biomedical applications.

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23

Gonçalves, Victor Sérgio Fernandes. "Estudo das interações de filmes finos intermetálicos do tipo Ti- Me (Me = Ag, Au, Al, Cu) com sistemas biológicos, aplicados à funcionalização de elétrodos-sensores do tipo polimérico para dispositivos biomédicos." Master's thesis, 2018. http://hdl.handle.net/1822/55872.

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Dissertação de mestrado em Biofísica e Bionanossistemas
Nas últimas décadas tem havido uma crescente solicitação na inovação e desenvolvimento de elétrodos/sensores biomédicos capazes de detetar sinais provenientes de tecidos vivos e convertê-los em sinais mensuráveis. Neste contexto tem havido uma grande quantidade de materiais a serem desenvolvidos e aplicados para o fabrico deste tipo de sensores. Dentro desses materiais, os materiais poliméricos funcionalizados com filmes finos intermetálicos de Ti-Me (Me=Al, Au, Ag e Cu) têm demonstrado um enorme potencial na obtenção de sensores com características muito especificas, tais como: boa elasticidade, manipulação fácil, baixo custo de produção e bom comportamento elétrico e mecânico. No entanto, têm surgido preocupações sobre o impacto que os nanomateriais e este novo conceito de sensor possam ter em sistemas biológicos, levando a questões sobre o tipo de repercussões podem ocorrer a longo prazo. Neste sentido, o trabalho efetuado durante esta dissertação teve como objetivo o estudo do impacto dos filmes finos de Ti-Me em fibroblastos e queratinócitos, procurando caracterizar a influência dos filmes no comportamento in vitro destas células. Na realização deste estudo foram produzidos filmes finos de Ti-Me por pulverização catódica em magnetrão não balanceado usando diferentes áreas de metal Me, sendo depois estudada a composição química dos filmes e o seu efeito sobre a viabilidade celular metabólica, indução de stress oxidativo, e capacidade inflamatória em fibroblastos e queratinócitos. Os resultados de composição química mostraram que houve a produção de filmes finos de Ti- Me com diferentes percentagens atómicas de Me e os estudos in vitro demonstram em alguns resultados um efeito tóxico principalmente dependente da percentagem atómica, mas também dependente do tempo de condicionamento e do Me. Apesar de terem sido observados alguns efeitos a nível da indução de stresse oxidativo e inflamação em alguns dos filmes de Ti-Me produzidos, é necessário realizar estudos in vitro mais detalhados e estudos in vivo de modo a ser possível retirar conclusões sobre a segurança da aplicação destes filmes na pele humana.
In recent decades there has been a growing demand for innovation and development of biomedical electrodes/sensors capable of detecting signals from living tissue and convert them into measurable signals. In this context, a great number of materials have been developed and applied for the manufacture of this type of sensors. Within these materials the polymeric materials functionalized with intermetallic thin films of Ti-Me (Me = Al, Au, Ag and Cu) have demonstrated a great potential to obtain sensors with very specific characteristics, such as: good elasticity, easy handling, low production cost and good electrical and mechanical behavior. However, concerns have arisen about the impact that nanomaterials and this new sensor concept may have on biological systems, leading to questions about the type of cellular interactions that can be triggered and the kind of long-term efects that may occur. Given that Ti-Me thin film sensors are designed to interact with the surface of the human skin, it is important to study the cytotoxic effects that they may have when applied to cells that are characteristic of this organ. In this sense, the objective of this work was to study the impact of Ti-Me thin films on the in vitro biological behavior of fibroblasts and keratinocytes. In this study, thin films of Ti-Me were produced by unbalanced magnetron sputtering using different areas of Me metal. The chemical composition of the films and their effect on metabolic cell viability, induction of oxidative stress, and inflammatory capacity in fibroblasts and keratinocytes was evaluated. The results of chemical composition showed that Ti-Me thin films were produced with different atomic percentages of Me. The in vitro studies demonstrated some cytotoxic effect, capacity to induce oxidative stress and inflammation, dependent on the atomic percentage, time of incubation and the nature of Me atom. Although potential cytotoxic effects have been observed in some of the produced Ti-Me films, more studies have to be performed in order to draw conclusions about the safety of the application of these films on human skin.

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24

Jeliazova, Yanka Martcheva [Verfasser]. "The growth of multilayer systems, consisting of thin oxidic (Ga2O3, Al2O3) and metallic (Ga, Al, Co, Au) films on Ni(100) and Cu(111) surfaces / vorgelegt von Yanka Martcheva Jeliazova." 2002. http://d-nb.info/96635611X/34.

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