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Статті в журналах з теми "Cu-Al Thin Film"
Hung, Fei Shuo, Fei Yi Hung, Che Ming Chiang, and Truan Sheng Lui. "Innovation and Annealed Effect of Sn-Al and Sn-Cu Composite Thin Films on the Electromagnetic Interference Shielding for the Green Materials." Advanced Materials Research 347-353 (October 2011): 547–54. http://dx.doi.org/10.4028/www.scientific.net/amr.347-353.547.
Повний текст джерелаYue, An Na, Kun Peng, Ling Ping Zhou, Jia Jun Zhu, and De Yi Li. "Influence of Ti Layer on the Structure and Properties of Al/Cu Thin Film." Advanced Materials Research 750-752 (August 2013): 1879–82. http://dx.doi.org/10.4028/www.scientific.net/amr.750-752.1879.
Повний текст джерелаRose, J. H., J. R. Lloyd, A. Shepela, and N. Riel. "Microstructure of Al-Cu thin-film interconnect." Proceedings, annual meeting, Electron Microscopy Society of America 49 (August 1991): 820–21. http://dx.doi.org/10.1017/s0424820100088415.
Повний текст джерелаAfifah, Faras, Arif Tjahjono, Aga Ridhova, Pramitha Yuniar Diah Maulida, Alfian Noviyanto, and Didik Aryanto. "Influence of Al and Cu Doping on the Structure, Morphology, and Optical Properties of ZnO Thin Film." Indonesian Journal of Chemistry 23, no. 1 (January 19, 2023): 44. http://dx.doi.org/10.22146/ijc.73234.
Повний текст джерелаLucadamo, G., K. Barmak, and K. P. Rodbell. "Texture in Ti/Al and Nb/Al multilayer thin films: Role of Cu." Journal of Materials Research 16, no. 5 (May 2001): 1449–59. http://dx.doi.org/10.1557/jmr.2001.0202.
Повний текст джерелаSato, Yuichi, Toshifumi Suzuki, Hiroyuki Mogami, Fumito Otake, Hirotoshi Hatori, and Suguru Igarashi. "Solid Phase Growth of some Metal and Metal Oxide Thin Films on Sapphire and Quartz Glass Substrates." Materials Science Forum 753 (March 2013): 505–9. http://dx.doi.org/10.4028/www.scientific.net/msf.753.505.
Повний текст джерелаRyabtsev, S. I., O. V. Sukhova, and V. A. Polonskyy. "Structure and corrosion in NaCl solution of quasicrystalline Al–Cu–Fe cast alloys and thin films." Journal of Physics and Electronics 27, no. 1 (October 17, 2019): 27–30. http://dx.doi.org/10.15421/331904.
Повний текст джерелаPalmstro/m, C. J., J. W. Mayer, B. Cunningham, D. R. Campbell, and P. A. Totta. "Thin film interactions of Al and Al(Cu) on TiW." Journal of Applied Physics 58, no. 9 (November 1985): 3444–48. http://dx.doi.org/10.1063/1.335765.
Повний текст джерелаEriksson, Fredrik, Simon Olsson, Magnus Garbrecht, Jens Birch, and Lars Hultman. "Phase Evolution of Al/Cu/Co Thin Films into Decagonal Quasicrystalline Phases." Acta Crystallographica Section A Foundations and Advances 70, a1 (August 5, 2014): C82. http://dx.doi.org/10.1107/s2053273314099173.
Повний текст джерелаWANG, YUE, HAO GONG, and LING LIU. "CRYSTAL STRUCTURE AND PROPERTIES OF CU-AL-O THIN FILMS." International Journal of Modern Physics B 16, no. 01n02 (January 20, 2002): 308–13. http://dx.doi.org/10.1142/s0217979202009809.
Повний текст джерелаДисертації з теми "Cu-Al Thin Film"
Birkett, Martin. "Optimisation of the performance characteristics of Cu-Al-Mo thin film resistors." Thesis, Northumbria University, 2009. http://nrl.northumbria.ac.uk/2013/.
Повний текст джерелаWeaver, David John. "A study of graphoepitaxially grown Al and Cu interconnects." Thesis, University of York, 1998. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.265566.
Повний текст джерелаHaidara, Fanta. "Etude des mécanismes de formation de phases dans des films minces du système ternaire Al-Cu-Fe." Thesis, Aix-Marseille 3, 2011. http://www.theses.fr/2011AIX30008.
Повний текст джерелаThe mechanisms of phase formation in thin films have been studied in the Al-Cu, Al-Fe, Fe-Cu and Al-Cu-Fe systems. Several samples with different compositions have been prepared by sputtering. Aluminium, copper and iron layers were deposited onto oxidized silicon substrates, they were heat treated and characterized by using several techniques. In situ X-ray diffraction and resistivity measurements were used to follow the phase formation. Thermal annealings followed by quenching have also been carried out to get additional information.Differential Scanning Calorimetry and coupled in-situ resistivity and X-ray diffractionmeasurements were performed. The whole results allowed us to suggest a mechanism of phase formation for each sample and by using theoretical models of growth we determined kinetic data on the phase formation
Burger, Sofie [Verfasser]. "High Cycle Fatigue of Al and Cu Thin Films by a Novel High-Throughput Method / Sofie Burger." Karlsruhe : KIT Scientific Publishing, 2013. http://www.ksp.kit.edu.
Повний текст джерелаAninat, Rémi. "Study of Cu(In,Al)Se2 thin films prepared by selenisation of sputtered metallic precursors for application in solar cells." Thesis, Northumbria University, 2012. http://nrl.northumbria.ac.uk/11373/.
Повний текст джерелаJeliazova, Yanka Martcheva. "The growth of multilayer systems, consisting of thin oxidic (Ga2O3, Al2O3) and metallic (Ga, Al, Co, Au) films on Ni(100) and Cu(111) surfaces." [S.l. : s.n.], 2002. http://deposit.ddb.de/cgi-bin/dokserv?idn=96635611X.
Повний текст джерелаRoss, Nick. "Interfacial Electrochemistry of Cu/Al Alloys for IC Packaging and Chemical Bonding Characterization of Boron Doped Hydrogenated Amorphous Silicon Films for Infrared Cameras." Thesis, University of North Texas, 2016. https://digital.library.unt.edu/ark:/67531/metadc849696/.
Повний текст джерелаWu, Wei-Jung, and 巫偉融. "Preparation and characterization of Cu(In,Al)Se2 thin film." Thesis, 2010. http://ndltd.ncl.edu.tw/handle/72348410582631819120.
Повний текст джерела國立中山大學
材料與光電科學學系研究所
98
Polycrystalline Cu(In,Al)Se2 films were deposited by four-source evaporation of Cu, In, Al, and Se using Knudsen type sources in which the elemental fluxes were coincident onto soda lime glass substrates. The single-phase films with composition of Cu:In:Al:Se = 28:15:9:48 which were confirmed by X-ray diffraction and micro-Raman spectroscopy were deposited at substrate temperature of 560℃. Secondary phases were observed when temperature of substrate is below 560℃ due to incompletely reaction. Under fixed effusion flux, the value of Cu/(In+Al) becomes larger as temperature of substrate increase. However, the value of Al/(In+Al) keeps nearly constant as temperature increase. The band gap is 1.53 eV derived from the result of spectrophotometer. The room temperature resistivity, Hall mobility and carrier concentration of the films are 0.28 Ωcm, 24.63 cm2V-1s-1 and 1.27x1019 cm-3 respectively. And the conductive type is p-type. By the way, we try to grow Cu(In,Al)Se2 film in the presence of an Sb beam at substrate temperature of 440℃. After the addition of an Sb beam, surface morphology become smooth and compact, but there is no significant grain growth. No matter an Sb beam adds or not, secondary phases were observed in both case due to the low temperature of substrate.
Tien, Hung-Chi, and 田宏吉. "Improvement of Against Oxidation and Electrical Properties of Passivated Cu(Al) Thin Film." Thesis, 2010. http://ndltd.ncl.edu.tw/handle/t78j23.
Повний текст джерела國立虎尾科技大學
材料科學與綠色能源工程研究所
98
In this study, the characteristics of Cu(Al) alloy thin films and its applications as the materials of interconnect were investigation. Copper has much lower electrical resistivity and higher electron migration (EM) resistance than that of aluminum. The copper suffers from poor adhesion with glass substrated and self-passivation layer after anneal. This work aims at preparing a low resistivity, high adhesion, oxidation resistance and self-passivated Cu(Al) alloy thin film, which will be potentially as gate material on TFT-LCD and interconnection on microelectronics. Cu1-xAlx (x = 1.75-7.50 at.%) films were prepared by a co-sputtering method and were subsequently annealed by a RTA in a temperature range of 200°C - 600°C for 10-30 min in oxygen ambient. Self-passivated Cu thin film in the form of Al2O3/Cu/SiO2 was therefore obtained because Al diffused easily from matrix to the surface and reacted with oxygen by forming, thus oxidation of copper film can be prevented. The formation of Al2O3/Cu/SiO2 improved the resistivity, adhesion to SiO2, oxidation resistance and passivative behavior of the studied film. The Cu (1.75 at.% Al) thin film had the lowest resistivity of 3.04 μΩcm, and exhibited a superior passivated behavior among the studied films.
Kuo-ChanHuang and 黃國展. "Investigation of Cu(In,Al)Se2 thin film solar cell fabricated by using electrodeposition technique." Thesis, 2015. http://ndltd.ncl.edu.tw/handle/y5vw25.
Повний текст джерела國立成功大學
微電子工程研究所
103
In this dissertation, we exploit the low cost electrodepositon technique to investigate the fabrication of Cu(In,Al)Se2 thin film solar cell. The research content is divided into four segments. In the first segment, the cyclic voltammetric studies are used to realize the element’s and compounds reduction potentials and identify a suitable potential as co-electrodeposition. In combination with the XRD analysis, chemical reaction mechanism for presuming the formation routes of quaternary Cu(In,Al)Se2 films are defined. Furthermore, It is found that the SDS additive promotes the deposited potential of each element closing to each other for a better co-elecorodeposition environment, and simultaneously change the nucleation mechanism of Cu(In,Al)Se2 films from instantaneous nucleation to progressive nucleation. This feature is helpful to obtain a smooth precursor Cu(In,Al)Se2film and round-like structure. In addition, we find the stoichiometry of Cu(In,Al)Se2 film changes from Cu-rich to Cu-poor type and the morphology of Cu(In,Al)Se2 film transfers from round-like structure to cauliflower-like structure by increasing deposited potential. In the second segment, we focus on the adjustment of stoichiometry and optical energy band gap of Cu(In,Al)Se2 films. By adjusting the Al and In concentration is solutions, the ratio of Al to (Al+In) in Cu(In,Al)Se2 films can be successfully controlled from 0.21 to 0.42, and the corresponding optical energy band gap of Cu(In,Al)Se2 films can be varied from1.17 eV to 1.48 eV to match with optimum band gap value for the solar spectrum. Furthermore, X-ray diffraction (XRD) patterns reveal three preferred growth orientations along the (112), (204/220), and (116/312) planes for all species. In the third segment, we focus on the surface morphology of Cu(In,Al)Se2 films and the relationship between precursor Cu(In,Al)Se2 films and post-annealed Cu(In,Al)Se2 films. The nucleation mechanism of electrodeposited Cu(In,Al)Se2 films change from instantaneous nucleation to progressive nucleation is observed by increasing the copper concentration. The research results exhibit that precursor Cu(In,Al)Se2 films had roughly cauliflower-like and triangular structures with Cu-poor composition at instantaneous nucleation mechanism, whereas smooth and round structures with Cu-rich composition at progressive nucleation mechanism. After post-annealing treatment, the surface morphology of Cu-rich Cu(In,Al)Se2 films shows high quality with compact structures and large grains, that is more beneficial to be the absorber layer of solar cell. A 1.96% efficient Cu(In,Al)Se2 thin film solar cell fabricated by electrodeposition technique is first time achieved and publish in international journal. The corresponding values of open-circuit voltage (Voc), short-circuit current (Jsc), fill factor (FF), Rsh and Rs are 0.189 V, 29.21 mA/cm2, 35.4%, 125Ω and 2.82Ω, respectively. In the fourth segment, the binary structure precursor Cu(In,Al)Se2 films are utilized to improve the surface morphology and of Cu(In,Al)Se2 films and investigate the characteristics of CdS and Cu(In,Al)Se2 interface. It is found that the upper Cu–Se compounds in binary structure can form a liquid phases during the post-annealing process, which enhances elemental migration and promotion of large grains and smooth surface formation and reduction of RMS roughness less than 100 nm. The subsequently deposition of CdS film on binary structure Cu(In,Al)Se2 films exhibit good spreadability and smoothness, leading to efficiently diminish the distribution of leakage current paths. The dark current–voltage characteristics of the CdS/CIAS heterojuncions shows that the reverse dark current density is decreased by approximately one order of magnitude from 4.02 x 10-4 A/cm2 (single structure) to 4.26 x 10-5 A/cm2 (binary structure). Furthermore, the conversion efficiency of CIAS solar cells is enhanced from 0.52 % (single structure) to 1.44 % (binary structure) with increase in Voc and Jsc.
Книги з теми "Cu-Al Thin Film"
Burger, Sofie. High Cycle Fatigue of Al and Cu Thin Films by a Novel High-Throughput Method. KIT Scientific Publishing, 2013.
Знайти повний текст джерелаЧастини книг з теми "Cu-Al Thin Film"
Jeon, Insu, Masaki Omiya, Hirotsugu Inoue, Kikuo Kishimoto, and Tadashi Asahina. "A New Specimen for Measuring the Interfacial Toughness of Al-0.5%Cu Thin Film on Si Substrate." In Key Engineering Materials, 521–26. Stafa: Trans Tech Publications Ltd., 2005. http://dx.doi.org/10.4028/0-87849-978-4.521.
Повний текст джерелаYu, Jun Young, and Youngman Kim. "The In-situ Intrinsic Stress Measurements of Cu and Al Thin Films." In Supplemental Proceedings, 281–88. Hoboken, NJ, USA: John Wiley & Sons, Inc., 2012. http://dx.doi.org/10.1002/9781118356074.ch37.
Повний текст джерелаLi, You Zhen, and Ji Cheng Zhou. "Fabrication of Ta-Al-N Thin Films and its Cu Diffusion on Barrier Properties." In Advanced Materials Research, 593–96. Stafa: Trans Tech Publications Ltd., 2007. http://dx.doi.org/10.4028/0-87849-463-4.593.
Повний текст джерелаMunir, Badrul, Rachmat Adhi Wibowo, Eun Soo Lee, and Kyoo Ho Kim. "Growth of Cu(In1-xAlx)Se2 Thin Films by Atmospheric Pressure Selenization of Sputtered Precursors." In Solid State Phenomena, 931–34. Stafa: Trans Tech Publications Ltd., 2007. http://dx.doi.org/10.4028/3-908451-31-0.931.
Повний текст джерелаMunir, Badrul, Rachmat Adhi Wibowo, and Kyoo Ho Kim. "Synthesis of Cu(In0.75Al0.25)Se2 Thin Films from Binary Selenides Powder Compacted Targets by Sputtering and Selenization." In Solid State Phenomena, 99–102. Stafa: Trans Tech Publications Ltd., 2008. http://dx.doi.org/10.4028/3-908451-48-5.99.
Повний текст джерелаBROTZEN, F. R., C. T. ROSENMAYER, and R. J. GALE. "MECHANICAL BEHAVIOR OF ALUMINUM AND Al–Cu(2%) THIN FILMS." In Metallurgical Coatings 1988, 291–98. Elsevier, 1988. http://dx.doi.org/10.1016/b978-1-85166-985-1.50034-0.
Повний текст джерелаIdrac, Jonathan, Peter Skeldon, Yanwen Liu, Teruo Hashimoto, Georges Mankowski, George Thompson, and Christine Blanc. "Morphology, composition and structure of anodic films on binary Al-Cu alloys." In Passivation of Metals and Semiconductors, and Properties of Thin Oxide Layers, 167–72. Elsevier, 2006. http://dx.doi.org/10.1016/b978-044452224-5/50028-7.
Повний текст джерелаТези доповідей конференцій з теми "Cu-Al Thin Film"
Shi, Gang, Zhen Sun, Geng-Fu Xu, Yun-Hao Min, Jun-Yi Luo, Yong Lu, Bing-Zong Li, et al. "Electromigration performance improvement of Al-Si-Cu/TiN/Ti/n+Si contact." In Third International Conference on Thin Film Physics and Applications, edited by Shixun Zhou, Yongling Wang, Yi-Xin Chen, and Shuzheng Mao. SPIE, 1998. http://dx.doi.org/10.1117/12.300685.
Повний текст джерелаHu, C. K., D. C. Edelstein, C. Uzoh, and T. Sullivan. "Comparison of electromigration in submicron Al(Cu) and Cu thin film lines." In Third international stress workshop on stress-induced phenomena in metallization. AIP, 1996. http://dx.doi.org/10.1063/1.50926.
Повний текст джерелаSusla, Bronislaw, Eugeniusz Chimczak, Miroslawa Bertrandt-Zytkowiak, and Maciej Kaminski. "Point contact spectroscopy of ZnS:Mn,Cu-Al thin film cells." In International Conference on Solid State Crystals '98, edited by Antoni Rogalski and Jaroslaw Rutkowski. SPIE, 1999. http://dx.doi.org/10.1117/12.344741.
Повний текст джерелаOda, Y., R. Hamazaki, S. Fukamizu, A. Yamamoto, T. Minemoto, and H. Takakura. "Cu(In,Al)S2 thin film solar cells prepared from sulfurization of Cu-In-Al precursors." In 2011 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2011. http://dx.doi.org/10.7567/ssdm.2011.l-3-2.
Повний текст джерелаZhao, Wen, Yong Wang, Ming Li, and Liming Gao. "Effect of Al-0.5%Cu thin film on reliability of IGBT module." In 2014 Joint IEEE International Symposium on the Applications of Ferroelectrics, International Workshop on Acoustic Transduction Materials and Devices & Workshop on Piezoresponse Force Microscopy (ISAF/IWATMD/PFM). IEEE, 2014. http://dx.doi.org/10.1109/isaf.2014.6918029.
Повний текст джерелаZhao, Wen, Yong Wang, Ming Li, and Liming Gao. "Effect of Al-0.5%Cu thin film on reliability of IGBT module." In 2014 15th International Conference on Electronic Packaging Technology (ICEPT). IEEE, 2014. http://dx.doi.org/10.1109/icept.2014.6922820.
Повний текст джерелаHasan, Mohd Rezaul, Md Abu Sayeed, and K. M. A. Hussain. "Effect of Aluminium (Al) and Copper (Cu) Doping on Characteristics of Tin Oxide (SnO2) Thin Film." In 2020 IEEE Region 10 Symposium (TENSYMP). IEEE, 2020. http://dx.doi.org/10.1109/tensymp50017.2020.9230800.
Повний текст джерелаGao, Yang, Weiming Cheng, Pengfei Zhou, and Songlin Zhuang. "Improving mechanical properties of optical thin films by ion assisted deposition." In OSA Annual Meeting. Washington, D.C.: Optica Publishing Group, 1989. http://dx.doi.org/10.1364/oam.1989.mnn8.
Повний текст джерелаKim, Byoung-Joon, Hae-A.-Seul Shin, In-Suk Choi, and Young-Chang Joo. "Electrical Failure and Damage Analysis of Multi-Layer Metal Films on Flexible Substrate during Cyclic Bending Deformation." In ISTFA 2011. ASM International, 2011. http://dx.doi.org/10.31399/asm.cp.istfa2011p0001.
Повний текст джерелаLIU, CHEN, OLIVER NAGLER, FLORIAN TREMMEL, MARIANNE UNTERREITMEIER, JESSICA J. FRICK, and DEBBIE G. SENESKY. "ACOUSTIC EMISSION SIGNAL PROCESSING STUDY OF NANOINDENTATION ON THIN FILM STACK STRUCTURES USING GAUSSIAN MIXTURE MODEL." In Structural Health Monitoring 2021. Destech Publications, Inc., 2022. http://dx.doi.org/10.12783/shm2021/36364.
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