Статті в журналах з теми "Crystalline Silicon (C-Si)"
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Hafdi, Zoubeida. "Electrical and Optical Characterization of Non-Hydrogenated a-Si/c-Si Heterojunction Solar Cells." Journal of Renewable Energies 24, no. 2 (December 31, 2021): 202–13. http://dx.doi.org/10.54966/jreen.v24i2.981.
Повний текст джерелаAgbo, Solomon, Pavol Sutta, Pavel Calta, Rana Biswas, and Bicai Pan. "Crystallized silicon nanostructures — experimental characterization and atomistic simulations." Canadian Journal of Physics 92, no. 7/8 (July 2014): 783–88. http://dx.doi.org/10.1139/cjp-2013-0442.
Повний текст джерелаBatstone, J. L. "In situ crystallization of amorphous silicon." Proceedings, annual meeting, Electron Microscopy Society of America 50, no. 2 (August 1992): 1346–47. http://dx.doi.org/10.1017/s042482010013136x.
Повний текст джерелаPamungkas, Mauludi Ariesto, and Rendra Widiyatmoko. "Effect of Hydrogenation Temperature on Distribution of Hydrogen Atoms in c-Si and a-Si: Molecular Dynamic Simulations." Key Engineering Materials 706 (August 2016): 55–59. http://dx.doi.org/10.4028/www.scientific.net/kem.706.55.
Повний текст джерелаWang, Ying Lian, and Jun Yao Ye. "Review and Development of Crystalline Silicon Solar Cell with Intelligent Materials." Advanced Materials Research 321 (August 2011): 196–99. http://dx.doi.org/10.4028/www.scientific.net/amr.321.196.
Повний текст джерелаHolla, M., Tzanimir Arguirov, Winfried Seifert, and Martin Kittler. "Analysis of Silicon Carbide and Silicon Nitride Precipitates in Block Cast Multicrystalline Silicon." Solid State Phenomena 156-158 (October 2009): 41–48. http://dx.doi.org/10.4028/www.scientific.net/ssp.156-158.41.
Повний текст джерелаMiddya, A. R., and Kartik Ghosh. "Quasicrystalline Phase of Silicon on Glass." MRS Proceedings 1493 (2013): 169–74. http://dx.doi.org/10.1557/opl.2013.225.
Повний текст джерелаEch-chamikh, E., A. Essafti, M. Azizan, F. Debbagh, and Y. Ijdiyaou. "Annealing Effects on RF Sputter Deposited a-Si/a-C Multilayers." Journal of Nano Research 4 (January 2009): 103–6. http://dx.doi.org/10.4028/www.scientific.net/jnanor.4.103.
Повний текст джерелаZhang, Junling, Shimou Chen, Haitao Zhang, Suojiang Zhang, Xue Yao, and Zhaohui Shi. "Electrodeposition of crystalline silicon directly from silicon tetrachloride in ionic liquid at low temperature." RSC Advances 6, no. 15 (2016): 12061–67. http://dx.doi.org/10.1039/c5ra23085c.
Повний текст джерелаMoreno, Mario, Arturo Ponce, Arturo Galindo, Eduardo Ortega, Alfredo Morales, Javier Flores, Roberto Ambrosio, et al. "Comparative Study on the Quality of Microcrystalline and Epitaxial Silicon Films Produced by PECVD Using Identical SiF4 Based Process Conditions." Materials 14, no. 22 (November 17, 2021): 6947. http://dx.doi.org/10.3390/ma14226947.
Повний текст джерелаLin, Jian, Hongsub Jee, Jangwon Yoo, Junsin Yi, Chaehwan Jeong, and Jaehyeong Lee. "Surface Passivation of Crystalline Silicon Wafer Using H2S Gas." Applied Sciences 11, no. 8 (April 15, 2021): 3527. http://dx.doi.org/10.3390/app11083527.
Повний текст джерелаZheng, Zhen, Junyang An, Ruiling Gong, Yuheng Zeng, Jichun Ye, Linwei Yu, Ileana Florea, Pere Roca i Cabarrocas, and Wanghua Chen. "Coupled Investigation of Contact Potential and Microstructure Evolution of Ultra-Thin AlOx for Crystalline Si Passivation." Nanomaterials 11, no. 7 (July 12, 2021): 1803. http://dx.doi.org/10.3390/nano11071803.
Повний текст джерелаKIEBACH, RAGNAR, ZHENRUI YU, MARIANO ACEVES-MIJARES, DONGCAI BIAN, and JINHUI DU. "THE DEPOSITION AND CONTROL OF SELF ASSEMBLED SILICON NANO ISLANDS ON CRYSTALLINE SILICON." International Journal of High Speed Electronics and Systems 18, no. 04 (December 2008): 901–10. http://dx.doi.org/10.1142/s0129156408005862.
Повний текст джерелаNussupov, K. Kh, N. B. Beisenkhanov, S. A. Kukushkin, A. T. Sultanov, S. Keiinbay, D. S. Shynybayev, and A. Zh Kusainova. "FORMATION OF CRYSTALLINE SiC IN NEAR-SURFACE SILICON LAYERS BY METHOD OF COORDINATED SUBSTITUTION OF ATOMS." Herald of the Kazakh-British technical university 20, no. 2 (July 1, 2023): 27–35. http://dx.doi.org/10.55452/1998-6688-2023-20-2-27-35.
Повний текст джерелаHaberl, Bianca, Malcolm Guthrie, David J. Sprouster, Jim S. Williams, and Jodie E. Bradby. "New insight into pressure-induced phase transitions of amorphous silicon: the role of impurities." Journal of Applied Crystallography 46, no. 3 (May 15, 2013): 758–68. http://dx.doi.org/10.1107/s0021889813010509.
Повний текст джерелаPakhuruddin, Mohd Zamir. "Ray Tracing of Light Trapping Schemes in Thin Crystalline Silicon for Photovoltaics." Solid State Phenomena 301 (March 2020): 183–91. http://dx.doi.org/10.4028/www.scientific.net/ssp.301.183.
Повний текст джерелаFollstaedt, D. M., J. A. Knapp, and S. M. Myers. "Mechanical properties of ion-implanted amorphous silicon." Journal of Materials Research 19, no. 1 (January 2004): 338–46. http://dx.doi.org/10.1557/jmr.2004.19.1.338.
Повний текст джерелаFangsuwannarak, Thipwan, K. Amonsurintawong, and Suwat Sopitpan. "Aluminum-Induced Crystallization of p+ Silicon Pinholes for the Formation of Rear Passivation Contact in Solar Cell." Key Engineering Materials 547 (April 2013): 31–40. http://dx.doi.org/10.4028/www.scientific.net/kem.547.31.
Повний текст джерелаGrzonka, Justyna, Ryszard Mania, János L. Lábár, and Jerzy Morgiel. "Effect of Silicon Additions in CrSi (10, 20, 30, 40 at. % Si) Magnetron Targets on Microstructure of Reactively Deposited (Cr,Si)N Coatings." Solid State Phenomena 186 (March 2012): 182–87. http://dx.doi.org/10.4028/www.scientific.net/ssp.186.182.
Повний текст джерелаWang, Dashan, James J. Tunney, Xiaomei Du, Michael L. Post, and Raynald Gauvin. "Transmission electron microscopy investigation of interfacial reactions between SrFeO3 thin films and silicon substrates." Journal of Materials Research 22, no. 1 (January 2007): 76–88. http://dx.doi.org/10.1557/jmr.2007.0005.
Повний текст джерелаJia, Xuguang, Ziyun Lin, Terry Chien-Jen Yang, Binesh Puthen-Veettil, Lingfeng Wu, Gavin Conibeer, and and Ivan Perez-Wurfl. "Post-Sputtering Heat Treatments of Molybdenum on Silicon Wafer." Applied Sciences 8, no. 9 (September 18, 2018): 1692. http://dx.doi.org/10.3390/app8091692.
Повний текст джерелаChen, Yusi, Yangsen Kang, Jieyang Jia, Yijie Huo, Muyu Xue, Zheng Lyu, Dong Liang, Li Zhao, and James S. Harris. "Nanostructured Dielectric Layer for Ultrathin Crystalline Silicon Solar Cells." International Journal of Photoenergy 2017 (2017): 1–6. http://dx.doi.org/10.1155/2017/7153640.
Повний текст джерелаDing, K., U. Aeberhard, A. Lambertz, V. Smirnov, B. Holländer, F. Finger, and U. Rau. "Impact of doped microcrystalline silicon oxide layers on crystalline silicon surface passivation." Canadian Journal of Physics 92, no. 7/8 (July 2014): 758–62. http://dx.doi.org/10.1139/cjp-2013-0627.
Повний текст джерелаJin, Jing, Xiao Lei Qu, and Wei Min Shi. "Two-Step Annealing for Solution-Based Metal Induced Crystallization of Amorphous Silicon Films." Advanced Materials Research 1052 (October 2014): 109–14. http://dx.doi.org/10.4028/www.scientific.net/amr.1052.109.
Повний текст джерелаPonomarev, Ilia, and Peter Kroll. "29Si NMR Chemical Shifts in Crystalline and Amorphous Silicon Nitrides." Materials 11, no. 9 (September 7, 2018): 1646. http://dx.doi.org/10.3390/ma11091646.
Повний текст джерелаYu, Kaihao, Tao Xu, Xing Wu, Wen Wang, Hui Zhang, Qiubo Zhang, Luping Tang, and Litao Sun. "In Situ Observation of Crystalline Silicon Growth from SiO2 at Atomic Scale." Research 2019 (October 30, 2019): 1–9. http://dx.doi.org/10.34133/2019/3289247.
Повний текст джерелаZhang, Cong, Ling Qu, and Wenjie Yuan. "Effects of Si/C Ratio on the Phase Composition of Si-C-N Powders Synthesized by Carbonitriding." Materials 13, no. 2 (January 12, 2020): 346. http://dx.doi.org/10.3390/ma13020346.
Повний текст джерелаPark, Sang-Hui, Han-Gyeol Lee, Jin-Hoon Ju, Sang-Hee Park, Gyu-Bong Cho, and Ki-Won Kim. "Electrochemical Properties of Silicon-Polyacrylonitrile (PAN) Composite Anodes for Flexible Batteries." Journal of Nanoscience and Nanotechnology 20, no. 11 (November 1, 2020): 7039–44. http://dx.doi.org/10.1166/jnn.2020.18831.
Повний текст джерелаKrajangsang, Taweewat, Apichan Moollakorn, Sorapong Inthisang, Amornrat Limmanee, Kobsak Sriprapha, Nattaphong Boriraksantikul, Tianchai Taratiwat, Nirod Akarapanjavit, and Jaran Sritharathikhun. "Study of an Amorphous Silicon Oxide Buffer Layer for p-Type Microcrystalline Silicon Oxide/n-Type Crystalline Silicon Heterojunction Solar Cells and Their Temperature Dependence." International Journal of Photoenergy 2014 (2014): 1–5. http://dx.doi.org/10.1155/2014/251508.
Повний текст джерелаShahriar, Ahnaf, Saif Hasnath, and Md Aminul Islam. "Effects of Operating Temperature on the Performance of c-Si, a-Si:H, CIGS, and CdTe/CdS Based Solar Cells." EDU Journal of Computer and Electrical Engineering 1, no. 1 (August 20, 2020): 31–37. http://dx.doi.org/10.46603/ejcee.v1i1.21.
Повний текст джерелаPENG, YINQIAO, JICHENG ZHOU, JIEHONG GONG, QINRONG YU, and GUIBIN LEI. "MICROSTRUCTURE AND DIELECTRIC PROPERTIES OF SILICON CARBONITRIDE DIELECTRIC BARRIER FILMS DEPOSITED BY SPUTTERING." Surface Review and Letters 25, no. 03 (March 8, 2018): 1850065. http://dx.doi.org/10.1142/s0218625x18500658.
Повний текст джерелаNikolskaia, A. B., S. S. Kozlov, M. F. Vildanova, O. K. Karyagina, and O. I. Shevaleevskiy. "Four-terminal perovskite-silicon tandem solar cells for low light applications." Journal of Physics: Conference Series 2103, no. 1 (November 1, 2021): 012191. http://dx.doi.org/10.1088/1742-6596/2103/1/012191.
Повний текст джерелаPerný, Milan, Vladimír Šály, František Janíček, Miroslav Mikolášek, Michal Váry, and Jozef Huran. "Electric measurements of PV heterojunction structures a-SiC/c-Si." Journal of Electrical Engineering 69, no. 1 (January 1, 2018): 52–57. http://dx.doi.org/10.1515/jee-2018-0007.
Повний текст джерелаNAKHMANSON, S. M., N. MOUSSEAU, G. T. BARKEMA, P. M. VOYLES, and D. A. DRABOLD. "MODELS OF PARACRYSTALLINE SILICON WITH A DEFECT-FREE BANDGAP." International Journal of Modern Physics B 15, no. 24n25 (October 10, 2001): 3253–57. http://dx.doi.org/10.1142/s0217979201007580.
Повний текст джерелаJusto, João F., Cesar R. S. da Silva, I. Pereyra, and Lucy V. C. Assali. "Structural and Electronic Properties of Si1-xCxO2." Materials Science Forum 483-485 (May 2005): 577–80. http://dx.doi.org/10.4028/www.scientific.net/msf.483-485.577.
Повний текст джерелаAbdulkadir, Auwal, Azlan Abdul Aziz, and Mohd Zamir Pakhuruddin. "Properties of PEDOT:PSS on Black Silicon and Hybrid Textured Surfaces." Solid State Phenomena 336 (August 30, 2022): 109–17. http://dx.doi.org/10.4028/p-5o4tp7.
Повний текст джерелаLi, Wei, Dong Lin Xia, Ming Xia Song, Zhen Zhong Zhang, Jia Miao Ni, and Xiu Jian Zhao. "Nickel Induced Lateral Crystallization of Amorphous Silicon Film by Electroless Planting." Advanced Materials Research 66 (April 2009): 147–50. http://dx.doi.org/10.4028/www.scientific.net/amr.66.147.
Повний текст джерелаChrostowski, Marta, José Alvarez, Alessia Le Donne, Simona Binetti, and Pere Roca i Cabarrocas. "Annealing of Boron-Doped Hydrogenated Crystalline Silicon Grown at Low Temperature by PECVD." Materials 12, no. 22 (November 19, 2019): 3795. http://dx.doi.org/10.3390/ma12223795.
Повний текст джерелаLu, You Jun, Hong Fang Shen, and Sheng Wei Guo. "Microwave Synthesis of Silicon Carbide Nano Powders with Silicon and Carbon." Key Engineering Materials 602-603 (March 2014): 118–21. http://dx.doi.org/10.4028/www.scientific.net/kem.602-603.118.
Повний текст джерелаGerardi, Gary J., Edward H. Poindexter, and David J. Keeble. "Paramagnetic Centers and Dopant Excitation in Crystalline Silicon Carbide." Applied Spectroscopy 50, no. 11 (November 1996): 1428–34. http://dx.doi.org/10.1366/0003702963904755.
Повний текст джерелаGedvilas, L. M., and A. H. Mahan. "Identification of Possible Bonding Sites for Post Deposition Oxygen Absorption in Microcrystalline Silicon." MRS Proceedings 808 (2004). http://dx.doi.org/10.1557/proc-808-a9.2.
Повний текст джерелаAichberger, S. v., O. Hahneiser, J. Löffler, H. Feist, and M. Kunst. "Excess Charge Carrier Kinetics in Amorphous Silicon/Crystalline Silicon Heterojunctions." MRS Proceedings 507 (1998). http://dx.doi.org/10.1557/proc-507-163.
Повний текст джерелаChu, Feihong, Xianlin Qu, Yongcai He, Wenling Li, Xiaoqing Chen, Zilong Zheng, Miao Yang, et al. "Prediction of sub-pyramid texturing as the next step towards high efficiency silicon heterojunction solar cells." Nature Communications 14, no. 1 (June 16, 2023). http://dx.doi.org/10.1038/s41467-023-39342-3.
Повний текст джерелаPearton, S. J. "Hydrogen in Crystalline Silicon." MRS Proceedings 59 (1985). http://dx.doi.org/10.1557/proc-59-457.
Повний текст джерелаSohn, Dong Kyun, Dae Gyu Moon, and Byung Tae Ahn. "Copper-Enhanced Solid Phase Crystallization of Amorphous Silicon Films." MRS Proceedings 424 (1996). http://dx.doi.org/10.1557/proc-424-225.
Повний текст джерелаFarrokh Baroughi, Mahdi, and Siva Sivoththaman. "Interface Study Of Nanocrystalline Silicon and Crystalline Silicon Using Microwave Photoconductivity Decay." MRS Proceedings 910 (2006). http://dx.doi.org/10.1557/proc-0910-a04-04.
Повний текст джерелаHuh, Hwang, and Jung H. Shin. "Formation of Large, Orientation-Controlled, Nearly Single Crystalline Si Thin Films on SiO2 Using Contact Printing of Rolled and Annealed Nickel Tapes." MRS Proceedings 762 (2003). http://dx.doi.org/10.1557/proc-762-a17.13.
Повний текст джерелаIslam, Md N., Sanjay K. Ram, and Satyendra Kumar. "Electronic Transport Across Porous/Crystalline Silicon Heterojunctions." MRS Proceedings 716 (2002). http://dx.doi.org/10.1557/proc-716-b11.7.
Повний текст джерелаZhu, X. F., J. S. Williams, D. J. Llewellyn, and J. C. McCallum. "Microstructure of Ultra High Dose Self Implanted Silicon." MRS Proceedings 504 (1997). http://dx.doi.org/10.1557/proc-504-27.
Повний текст джерелаNogales, E., B. Méndez, J. Piqueras, and R. Plugaru. "STM-REBIC study of nanocrystalline and crystalline silicon." MRS Proceedings 738 (2002). http://dx.doi.org/10.1557/proc-738-g7.6.
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