Статті в журналах з теми "Crystal growth and design"
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Boons, Sofie. "Crystal Growing Design method: An investigation into the growing of crystals for jewellery designs." Craft Research 13, no. 2 (September 1, 2022): 303–26. http://dx.doi.org/10.1386/crre_00081_1.
Повний текст джерелаChoi, Jung Woo, Jung Gyu Kim, Byung Kyu Jang, Sang Ki Ko, Myung Ok Kyun, Jung Doo Seo, Kap Ryeol Ku, Jeong Min Choi, and Won Jae Lee. "Modified Hot-Zone Design for Large Diameter 4H-SiC Single Crystal Growth." Materials Science Forum 963 (July 2019): 18–21. http://dx.doi.org/10.4028/www.scientific.net/msf.963.18.
Повний текст джерелаDerby, Jeffrey J. "Theoretical Modeling of Czochralski Crystal Growth." MRS Bulletin 13, no. 10 (October 1988): 29–35. http://dx.doi.org/10.1557/s0883769400064162.
Повний текст джерелаSteed, Jonathan W. "Crystal Growth & Design in Lockdown." Crystal Growth & Design 21, no. 1 (January 6, 2021): 1–2. http://dx.doi.org/10.1021/acs.cgd.0c01484.
Повний текст джерелаLi, Shi, Jihe Zhao, Xiao Wang, Zhihua Li, Xuefeng Gui, Jiwen Hu, Shudong Lin, and Yuanyuan Tu. "Preparation of polyethylene oxide single crystals via liquid gating technology and morphology design strategy." Acta Crystallographica Section B Structural Science, Crystal Engineering and Materials 77, no. 5 (September 18, 2021): 819–23. http://dx.doi.org/10.1107/s2052520621008076.
Повний текст джерелаTurner, T. D., T. T. H. Nguyen, P. Nicholson, G. Brown, R. B. Hammond, K. J. Roberts, and I. Marziano. "A temperature-controlled single-crystal growth cell for the in situ measurement and analysis of face-specific growth rates." Journal of Applied Crystallography 52, no. 2 (March 28, 2019): 463–67. http://dx.doi.org/10.1107/s1600576719002048.
Повний текст джерелаZhang, Shengtao, Guoqing Fu, Hongda Cai, Junzhi Yang, Guofeng Fan, Yanyu Chen, Tie Li, and Lili Zhao. "Design and Optimization of Thermal Field for PVT Method 8-Inch SiC Crystal Growth." Materials 16, no. 2 (January 12, 2023): 767. http://dx.doi.org/10.3390/ma16020767.
Повний текст джерелаLi, Jinjin, Carl J. Tilbury, Seung Ha Kim, and Michael F. Doherty. "A design aid for crystal growth engineering." Progress in Materials Science 82 (September 2016): 1–38. http://dx.doi.org/10.1016/j.pmatsci.2016.03.003.
Повний текст джерелаBatur, Celal, Walter M. B. Duval, and Robert J. Bennett. "Control and design of crystal growth furnace." ISA Transactions 38, no. 1 (January 1999): 73–85. http://dx.doi.org/10.1016/s0019-0578(98)00043-3.
Повний текст джерелаCabric, B., and T. Pavlovic. "Apparatus for crystal growth." Journal of Applied Crystallography 38, no. 2 (March 11, 2005): 368–69. http://dx.doi.org/10.1107/s002188980500511x.
Повний текст джерелаKu, Kap Ryeol, Jung Kyu Kim, Jung Doo Seo, Ju Young Lee, Myung Ok Kyun, Won Jae Lee, Geun Hyoung Lee, Il Soo Kim, and Byoung Chul Shin. "High Quality SiC Crystals Grown by the Physical Vapor Transport Method with a New Crucible Design." Materials Science Forum 527-529 (October 2006): 83–86. http://dx.doi.org/10.4028/www.scientific.net/msf.527-529.83.
Повний текст джерелаJung, Jung Young, Sang Il Lee, Mi Seon Park, Doe Hyung Lee, Hee Tae Lee, Won Jae Lee, Soon Ku Hong, and Myong Chuel Chun. "The Effect of Modified Crucible Design and Seed Attachment on SiC Crystal Grown by PVT." Materials Science Forum 740-742 (January 2013): 77–80. http://dx.doi.org/10.4028/www.scientific.net/msf.740-742.77.
Повний текст джерелаSun, Congting, and Dongfeng Xue. "Chemical bonding theory of single crystal growth and its application to crystal growth and design." CrystEngComm 18, no. 8 (2016): 1262–72. http://dx.doi.org/10.1039/c5ce02328a.
Повний текст джерелаSchmalenberg, Mira, Stephanie Kreis, Lena K. Weick, Christian Haas, Fabian Sallamon, and Norbert Kockmann. "Continuous Cooling Crystallization in a Coiled Flow Inverter Crystallizer Technology—Design, Characterization, and Hurdles." Processes 9, no. 9 (August 29, 2021): 1537. http://dx.doi.org/10.3390/pr9091537.
Повний текст джерелаLiu, Zenghui, Hua Wu, Jian Zhuang, Gang Niu, Nan Zhang, Wei Ren, and Zuo-Guang Ye. "High Curie temperature bismuth-based piezo-/ferroelectric single crystals of complex perovskite structure: recent progress and perspectives." CrystEngComm 24, no. 2 (2022): 220–30. http://dx.doi.org/10.1039/d1ce00962a.
Повний текст джерелаTian, Maozhang, Xi Chen, Qun Zhang, Xinyuan Zou, Desheng Ma, Jiaming Xuan, Wentao Wang, and Meiwen Cao. "Peptide-Mediated Synthesis of Zeolitic Imidazolate Framework-8: Effect of Molecular Hydrophobicity, Charge Number and Charge Location." Nanomaterials 11, no. 10 (October 12, 2021): 2665. http://dx.doi.org/10.3390/nano11102665.
Повний текст джерелаHarada, S., Goki Hatasa, Kenta Murayama, Tomohisa Kato, M. Tagawa, and Toru Ujihara. "Solvent Design for High-Purity SiC Solution Growth." Materials Science Forum 897 (May 2017): 32–35. http://dx.doi.org/10.4028/www.scientific.net/msf.897.32.
Повний текст джерелаJang, Byung Kyu, Jong Hwi Park, Jung Woo Choi, Eunsu Yang, Jung Gyu Kim, Sang Ki Ko, Myung Ok Kyun, Kap Ryeol Ku, Yeon Suk Jang, and Won Jae Lee. "Modified Hot-Zone Design of Growth Cell for Reducing the Warpage of 6”-SiC Wafer." Materials Science Forum 1004 (July 2020): 32–36. http://dx.doi.org/10.4028/www.scientific.net/msf.1004.32.
Повний текст джерелаLi, K., and W. R. Hu. "Magnetic field design for floating zone crystal growth." Journal of Crystal Growth 230, no. 1-2 (August 2001): 125–34. http://dx.doi.org/10.1016/s0022-0248(01)01331-8.
Повний текст джерелаKamaruddin, W. H. A., Hamdan Hadi Kusuma, and Zuhairi Ibrahim. "Effect of New Thermal Insulation to the Growth of LiNbO3 Single Crystal by Czochralski Method." Advanced Materials Research 701 (May 2013): 108–12. http://dx.doi.org/10.4028/www.scientific.net/amr.701.108.
Повний текст джерелаBlack, Simon N., Adrian Hutchinson, and Roger J. Davey. "Concerning the selection of crystallization modifiers for non-hydrogen bonded systems: the case of benzophenone." CrystEngComm 23, no. 5 (2021): 1281–93. http://dx.doi.org/10.1039/d0ce01547d.
Повний текст джерелаChoi, Si Young, and Suk Joong L. Kang. "Control of Boundary Structure and Grain Growth for Microstructural Design." Materials Science Forum 475-479 (January 2005): 3891–96. http://dx.doi.org/10.4028/www.scientific.net/msf.475-479.3891.
Повний текст джерелаDropka, Natasha, Xia Tang, Gagan Kumar Chappa, and Martin Holena. "Smart Design of Cz-Ge Crystal Growth Furnace and Process." Crystals 12, no. 12 (December 5, 2022): 1764. http://dx.doi.org/10.3390/cryst12121764.
Повний текст джерелаGevelber, M. A., and G. Stephanopoulos. "Control and System Design for the Czochralski Crystal Growth Process." Journal of Dynamic Systems, Measurement, and Control 115, no. 1 (March 1, 1993): 115–21. http://dx.doi.org/10.1115/1.2897385.
Повний текст джерелаWang, Xiangmei, Zeliang Gao, Chunyan Wang, Xiaojie Guo, Youxuan Sun, Yu Jia, and Xutang Tao. "Design, growth, and characterization of Y2Mo4O15 crystals for Raman laser applications." RSC Advances 11, no. 2 (2021): 1164–71. http://dx.doi.org/10.1039/d0ra08609f.
Повний текст джерелаRogers, Robin D. "Crystal Growth & Design Around the World in 2012." Crystal Growth & Design 12, no. 1 (January 4, 2012): 1–2. http://dx.doi.org/10.1021/cg201654d.
Повний текст джерелаSrinivasan, A., C. Batur, R. Veillette, B. N. Rosenthal, and W. M. B. Duval. "Projective control design for multi-zone crystal growth furnace." IEEE Transactions on Control Systems Technology 2, no. 2 (June 1994): 142–47. http://dx.doi.org/10.1109/87.294337.
Повний текст джерелаSun, Congting, and Dongfeng Xue. "Crystal Growth and Design of Sapphire: Experimental and Calculation Studies of Anisotropic Crystal Growth upon Pulling Directions." Crystal Growth & Design 14, no. 5 (April 22, 2014): 2282–87. http://dx.doi.org/10.1021/cg401867c.
Повний текст джерелаKang, Suk Joong L., Yang Il Jung, and Kyoung Seok Moon. "Principles of Microstructural Design in Two-Phase Systems." Materials Science Forum 558-559 (October 2007): 827–34. http://dx.doi.org/10.4028/www.scientific.net/msf.558-559.827.
Повний текст джерелаMoreno, Abel, and Manuel Soriano-García. "Crystal-growth kinetics of protein single crystals along capillary tubes in the gel-acupuncture technique." Acta Crystallographica Section D Biological Crystallography 55, no. 2 (February 1, 1999): 577–80. http://dx.doi.org/10.1107/s0907444998013985.
Повний текст джерелаKim, Jung Kyu, Kap Ryeol Ku, Dong Jin Kim, Sang Phil Kim, Won Jae Lee, Byoung Chul Shin, Geun Hyoung Lee, and Il Soo Kim. "SiC Crystal Growth by Sublimation Method with Modification of Crucible and Insulation Felt Design." Materials Science Forum 483-485 (May 2005): 47–50. http://dx.doi.org/10.4028/www.scientific.net/msf.483-485.47.
Повний текст джерелаQin, Zuoyan, Wenhao Chen, Danxia Deng, Zhenhua Sun, Baikui Li, Ruisheng Zheng, and Honglei Wu. "Simulation and Experiment for Growth of High-Quality and Large-Size AlN Seed Crystals by Spontaneous Nucleation." Sensors 20, no. 14 (July 15, 2020): 3939. http://dx.doi.org/10.3390/s20143939.
Повний текст джерелаWarzecha, Monika, Alastair J. Florence, and Peter G. Vekilov. "The Ambiguous Functions of the Precursors That Enable Nonclassical Modes of Olanzapine Nucleation and Growth." Crystals 11, no. 7 (June 26, 2021): 738. http://dx.doi.org/10.3390/cryst11070738.
Повний текст джерелаLi, Jingjie, Jiachen Wang, and Changmeng Liu. "The process and mechanical properties of GH4169 columnar crystals fabricated by wire arc additive manufacturing." Advances in Engineering Technology Research 1, no. 1 (May 17, 2022): 259. http://dx.doi.org/10.56028/aetr.1.1.259.
Повний текст джерелаLuo, Hao, Xuefeng Han, Yuanchao Huang, Deren Yang, and Xiaodong Pi. "Numerical Simulation of a Novel Method for PVT Growth of SiC by Adding a Graphite Block." Crystals 11, no. 12 (December 18, 2021): 1581. http://dx.doi.org/10.3390/cryst11121581.
Повний текст джерелаChoi, Su Hun, Young Gon Kim, Yun Ji Shin, Seong Min Jeong, Myung Hyun Lee, Chae Young Lee, Jeong Min Choi, Mi Seon Park, Yeon Suk Jang, and Won Jae Lee. "The Effect of Stepped Wall of the Graphite Crucible in Top Seeded Solution Growth of SiC Crystal." Materials Science Forum 924 (June 2018): 27–30. http://dx.doi.org/10.4028/www.scientific.net/msf.924.27.
Повний текст джерелаPerlovich, German. "Melting points of one- and two-component molecular crystals as effective characteristics for rational design of pharmaceutical systems." Acta Crystallographica Section B Structural Science, Crystal Engineering and Materials 76, no. 4 (July 21, 2020): 696–706. http://dx.doi.org/10.1107/s2052520620007362.
Повний текст джерелаZhang, Hui, Lili Zheng, and Haisheng Fang. "Hot zone design for controlled growth to mitigate cracking in laser crystal growth." Journal of Crystal Growth 318, no. 1 (March 2011): 695–99. http://dx.doi.org/10.1016/j.jcrysgro.2010.11.130.
Повний текст джерелаDai, Feng Yan, Wen Gang Ji, and Jian Shu Cao. "Design and Analysis of Ultra-Low Speed Movement Equipment System." Applied Mechanics and Materials 130-134 (October 2011): 1475–79. http://dx.doi.org/10.4028/www.scientific.net/amm.130-134.1475.
Повний текст джерелаde Sandro, J. P., and A. Chevy. "Novel design of graphite crucible for AgGaSe2 single-crystal growth." Journal of Crystal Growth 144, no. 1-2 (November 1994): 65–69. http://dx.doi.org/10.1016/0022-0248(94)90011-6.
Повний текст джерелаRabeh, Wael, and Joel Bernstein. "Crystal Growth to Foster Inquiry–Based Learning: First Year Science Laboratory." Acta Crystallographica Section A Foundations and Advances 70, a1 (August 5, 2014): C1383. http://dx.doi.org/10.1107/s2053273314086161.
Повний текст джерелаLiang, Yuan-Chang, and Wei-Cheng Zhao. "Crystal Growth and Design of Disk/Filament ZnO-Decorated 1D TiO2 Composite Ceramics for Photoexcited Device Applications." Nanomaterials 11, no. 3 (March 8, 2021): 667. http://dx.doi.org/10.3390/nano11030667.
Повний текст джерелаJeon, Hye Jun, Hyeonwook Park, Ganesh Koyyada, Salh Alhammadi, and Jae Hak Jung. "Optimal Cooling System Design for Increasing the Crystal Growth Rate of Single-Crystal Silicon Ingots in the Czochralski Process Using the Crystal Growth Simulation." Processes 8, no. 9 (September 1, 2020): 1077. http://dx.doi.org/10.3390/pr8091077.
Повний текст джерелаYao, Xiaogang, Zhen Kong, Shengfu Liu, Yong Wang, Yongliang Shao, Yongzhong Wu, and Xiaopeng Hao. "Comparative Studies of c- and m-Plane AlN Seeds Grown by Physical Vapor Transport." Materials 15, no. 24 (December 9, 2022): 8791. http://dx.doi.org/10.3390/ma15248791.
Повний текст джерелаLu, Dazhi, Xiaoheng Li, Haohai Yu, Huaijin Zhang, and Jiyang Wang. "Review of the Yb3+:ScBO3 Laser Crystal Growth, Characterization, and Laser Applications." Applied Sciences 11, no. 22 (November 17, 2021): 10879. http://dx.doi.org/10.3390/app112210879.
Повний текст джерелаNakamura, Hirohiko, Sachiko Takahashi, Koji Inaka, and Hiroaki Tanaka. "Semi-empirical model to estimate ideal conditions for the growth of large protein crystals." Acta Crystallographica Section D Structural Biology 76, no. 12 (November 26, 2020): 1174–83. http://dx.doi.org/10.1107/s205979832001445x.
Повний текст джерелаWang, Lan, Guilin Liu, Xi Xi, Guofeng Yang, Lifa Hu, Bingjie Zhu, Yifeng He, et al. "Annealing Engineering in the Growth of Perovskite Grains." Crystals 12, no. 7 (June 24, 2022): 894. http://dx.doi.org/10.3390/cryst12070894.
Повний текст джерелаJeon, Hye Jun, Hyeonwook Park, Salh Alhammadi, Jae Hak Jung, and Woo Kyoung Kim. "Optimal Magnetic Graphite Heater Design for Impurity Control in Single-Crystal Si Grower Using Crystal Growth Simulation." Processes 10, no. 1 (December 30, 2021): 70. http://dx.doi.org/10.3390/pr10010070.
Повний текст джерелаKuz’micheva, Galina, Irina Kaurova, Victor Rybakov, and Vadim Podbel’skiy. "Crystallochemical Design of Huntite-Family Compounds." Crystals 9, no. 2 (February 15, 2019): 100. http://dx.doi.org/10.3390/cryst9020100.
Повний текст джерелаChen, Q. S., H. Zhang, V. Prasad, C. M. Balkas, and N. K. Yushin. "Modeling of Heat Transfer and Kinetics of Physical Vapor Transport Growth of Silicon Carbide Crystals." Journal of Heat Transfer 123, no. 6 (April 9, 2001): 1098–109. http://dx.doi.org/10.1115/1.1409263.
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