Дисертації з теми "Crystal growth and design"
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Masaoka, Shigeyuki. "Studies on Crystal Design and Crystal Growth Control of Multinuclear Metal Complexes." 京都大学 (Kyoto University), 2004. http://hdl.handle.net/2433/147663.
Повний текст джерелаBerry, David J. "Pharmaceutical Co-crystals. Combining thermal microscopy and phase space considerations to facilitate the growth of novel phases." Thesis, University of Bradford, 2009. http://hdl.handle.net/10454/4932.
Повний текст джерелаPatel, Dhaval D. "KINETICS AND MECHANISMS OF CRYSTAL GROWTH INHIBITION OF INDOMETHACIN BY MODEL PRECIPITATION INHIBITORS." UKnowledge, 2015. http://uknowledge.uky.edu/pharmacy_etds/47.
Повний текст джерелаRamesh, Dinesh. "The Role of Interface in Crystal Growth, Energy Harvesting and Storage Applications." Thesis, University of North Texas, 2020. https://digital.library.unt.edu/ark:/67531/metadc1752367/.
Повний текст джерелаFrewin, Christopher L. "Design and Implementation of a 200mm 3C-SiC CVD Reactor." [Tampa, Fla] : University of South Florida, 2006. http://purl.fcla.edu/usf/dc/et/SFE0001855.
Повний текст джерелаDespréaux, Stéphane. "Optimisation de forme en cristallogenèse." Université Joseph Fourier (Grenoble), 1998. http://www.theses.fr/1998GRE10220.
Повний текст джерелаSmith, Matthew T. "Design And Development Of A Silicon Carbide Chemical Vapor Deposition Reactor." [Tampa, Fla.] : University of South Florida, 2003. http://purl.fcla.edu/fcla/etd/SFE0000145.
Повний текст джерелаKananagh, A. "The crystal growth and crystal growth inhibition of calcium carbonate." Thesis, University of Cambridge, 1986. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.383820.
Повний текст джерелаPeltier, Raoul. "Biomimetic modification of crystal growth." Thesis, University of Auckland, 2011. http://hdl.handle.net/2292/7150.
Повний текст джерелаLee, William Thomas. "Surface relaxations and crystal growth." Thesis, University of Cambridge, 2001. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.621106.
Повний текст джерелаGao, Wei. "Crystal growth of alpha-rhombohedral boron." Thesis, Manhattan, Kan. : Kansas State University, 2010. http://hdl.handle.net/2097/4171.
Повний текст джерелаDutt, Yougesh Chander. "Crystal growth of monosodium urate monohydrate." Thesis, University of British Columbia, 1985. http://hdl.handle.net/2429/24633.
Повний текст джерелаPharmaceutical Sciences, Faculty of
Graduate
Umemura, Ayako. "Modelling Crystal Growth in Zeolite A." Thesis, University of Manchester, 2009. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.506601.
Повний текст джерелаDay, Robert Watson. "Crystal Growth on One-Dimensional Substrates: Plateau-Rayleigh Crystal Growth and Other Opportunities for Core/Shell Nanowire Synthesis." Thesis, Harvard University, 2015. http://nrs.harvard.edu/urn-3:HUL.InstRepos:17464133.
Повний текст джерелаChemistry and Chemical Biology
Elliott, Mary Alice. "Crystal aging of terephthalic acid." Thesis, Georgia Institute of Technology, 1985. http://hdl.handle.net/1853/10935.
Повний текст джерелаDo-Quang, Minh. "Melt convection in welding and crystal growth." Doctoral thesis, Stockholm : Department of Mechanics, Royal Institute of Technology, 2004. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-83.
Повний текст джерелаHenderson, M. B. "Fatigue crack growth in single crystal superalloys." Thesis, University of Oxford, 1992. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.314993.
Повний текст джерелаHicks, T. W. "Hydrodynamics of liquid encapsulation Czochralski crystal growth." Thesis, University of Bristol, 1988. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.233905.
Повний текст джерелаMcComber, Kevin A. "Single-crystal germanium growth on amorphous silicon." Thesis, Massachusetts Institute of Technology, 2011. http://hdl.handle.net/1721.1/69792.
Повний текст джерелаCataloged from PDF version of thesis.
Includes bibliographical references (p. 130-136).
The integration of photonics with electronics has emerged as a leading platform for microprocessor technology and the continuation of Moore's Law. As electronic device dimensions shrink, electronic signals encounter crippling delays and heating issues such that signal transduction across large on-chip distances becomes increasingly more difficult. However, these issues may be mitigated by the use of photonic interconnects combined with electronic devices in electronic-photonic integrated circuits (EPICs). The electronics in proposed EPIC designs perform the logic operations and short-distance signal transmission, while photonic devices serve to transmit signals over longer lengths. However, the photonic devices are large compared to electronic devices, and thus the two types of devices would ideally exist on separate levels of the microprocessor stack in order to maximize the amount of silicon substrate available for electronic device fabrication. A CMOS-compatible back-end process for the fabrication of photonic devices is necessary to realize such a three-dimensional EPIC. Back-end processing is limited in thermal budget and does not present a single-crystal substrate for epitaxial growth, however, so high-quality crystal fabrication methods currently used for photonic device fabrication are not possible in back-end processing. This thesis presents a method for the fabrication of high-quality germanium single crystals using CMOS-compatible back-end processing. Initial work on the ultra-high vacuum chemical vapor deposition of polycrystalline germanium on amorphous silicon is presented. The deposition can be successfully performed by using a pre-growth hydrofluoric acid dip and by limiting the thickness of the amorphous silicon layer to less than 120 nm. Films deposited at temperatures of 350° C, 450° C, and 550° C show (110) texture, though the texture is most prevalent in growths at 450° C. Poly-Ge grown at 4500 C is successfully doped n-type in situ, and the grain size of as-grown material is enhanced by lateral growth over a barrier. Structures are fabricated for the growth of Ge confined in one dimension. The growths show faceting across large areas, in contrast to as-deposited poly-Ge, corresponding to enhanced grain sizes. Growth confinement is shown to reduce the defect density as the poly-Ge grows. When coalesced into a continuous film, the material grown from 1 D confinement exhibits a lower carrier density and lower trap density than as-deposited poly-Ge, indicating improved material quality. We measure an increased grain size from as-deposited poly-Ge to Ge grown from ID confinement. Single-crystal germanium is grown at 450° C from confinement in two dimensions. Such growths exhibit faceting across the entire crystal as well as the presence of E3 boundaries ({111} twins), with many growths showing no other boundaries. These twins mediate the growth of the crystal, as they serve as the points for heterogeneous surface nucleation of adatom clusters. The twins can form after the crystal nucleates and are strongly preferred in order to obtain appreciable crystal growth rates. We model the growths from the confining channels in order to find the optimum channel geometry for large, uniform, single-crystal growths that consistently emerge from the channel. The growths from 2D confinement show lower trap density than those from 1 D confinement, indicating a further enhancement of the crystal quality due to the increased confinement. This method of single-crystal growth from an amorphous substrate is extensible to any materials system in which selective non-epitaxial deposition is possible.
by Kevin A. McComber.
Ph.D.
Masheder, Benjamin. "Zirconium molybdate crystal growth and morphological control." Thesis, University of Bristol, 2011. http://hdl.handle.net/1983/e8beeb71-04f4-4a53-8ec8-aa4c1bbdd90b.
Повний текст джерелаBatchelor, E. "Acid:base Co-crystal formation in crystal engineering and supramolecular design." Thesis, University of Cambridge, 2001. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.596460.
Повний текст джерелаAswartham, Saicharan. "Crystal growth and physical properties of Ferro-pnictides." Doctoral thesis, Saechsische Landesbibliothek- Staats- und Universitaetsbibliothek Dresden, 2012. http://nbn-resolving.de/urn:nbn:de:bsz:14-qucosa-99601.
Повний текст джерелаMcmillen, Colin David. "Hydrothermal crystal growth of oxides for optical applications." Connect to this title online, 2007. http://etd.lib.clemson.edu/documents/1181251539/.
Повний текст джерелаHaire, Lesley Findlay. "Strategies for protein crystal growth-screening and optimization." Thesis, Imperial College London, 1996. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.243778.
Повний текст джерелаStevens, Sam. "Understanding Porous Crystal Growth By Scanning Electron Microscopy." Thesis, University of Manchester, 2010. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.532223.
Повний текст джерелаWebster, Gareth. "Sucrose crystal growth kinetics using a rotating disc." Thesis, University of Manchester, 1988. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.277687.
Повний текст джерелаBraybrook, Alison Louise. "Parallel computational and experimental studies of crystal growth." Thesis, Keele University, 2002. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.251513.
Повний текст джерелаLin, Chenting. "Single crystal growth and characterization of BSO (Bi12SiO20)." Thesis, Massachusetts Institute of Technology, 1994. http://hdl.handle.net/1721.1/11647.
Повний текст джерелаBordui, Peter Frank. "Crystal growth of KTiOPO₄ from high-temperature solution." Thesis, Massachusetts Institute of Technology, 1987. http://hdl.handle.net/1721.1/14962.
Повний текст джерелаMICROFICHE COPY AVAILABLE IN ARCHIVES AND SCIENCE.
Vita.
Bibliography: leaves 117-119.
by Peter Frank Bordui.
Ph.D.
Brakel, Thomas W. "Mathematical modelling of the Czochralski crystal growth process." Doctoral thesis, University of Cape Town, 2006. http://hdl.handle.net/11427/4868.
Повний текст джерелаIn this document a mathematical model for the Czochralski crystal growth process is developed. The trend in current research involves developing cumbersome numerical simulations that provide little or no understanding of the underlying physics. We attempt to review previous research methods, mainly devoted to silicon, and develop a novel analytical tool for indium antimonide (lnSb) crystal growth. This process can be subdivided into two categories: solidification and fluid mechanics. Thus far, crystal solidification of the Czochralski process has been described in the literature mainly qualitatively. There has been little work in calculating actual solidification dynamics. Czochralski crystal growth is a very sensitive process, particularly for lnSb, so it is crucial to describe the system as accurately as possible. A novel ID quasi-steady method is proposed for the shape and temperature field of an lnSb crystal, incorporating the effects of the melt. The fluid mechanics of the Czochralski melt have been modelled by numerous researchers,with calculations performed using commercial software. However, a descriptionof the buoyancy and rotation interaction in the melt has not been adequatelyperformed. Many authors have presented flow patterns but none have indicated either: melt conditions preferential for crystal growth or at least a description of a typical melt structure. In this work, a scale analysis is performed that implies an idealized flow structure. An asymptotic model is then derived based on this order of magnitude analysis, resulting in a fast and efficient fluid flow calculation. The asymptotic model is validated against a numerical solution to ensure that the macroscopic features of the flow structure are present. The asymptotic model does not show exact agreement, but does provide an estimate of the melt heat flux that is necessary for the solidification calculation. The asymptotic model is also used to predict macroscopic changes in the melt due to rotation.
Zhang, Hao. "Gravity-dependent transport phenomena in zeolite crystal growth." Case Western Reserve University School of Graduate Studies / OhioLINK, 1992. http://rave.ohiolink.edu/etdc/view?acc_num=case1060021149.
Повний текст джерелаVompe, Dmitry A. "Numerical modeling of crystal growth in bridgman device /." The Ohio State University, 1997. http://rave.ohiolink.edu/etdc/view?acc_num=osu1487947501136706.
Повний текст джерелаSmith, Rachel. "Probing crystal growth in methanol-to-olefins catalysts." Thesis, University of Manchester, 2016. https://www.research.manchester.ac.uk/portal/en/theses/probing-crystal-growth-in-methanoltoolefins-catalysts(83b999a1-775e-4e55-8e94-47403d2a86c6).html.
Повний текст джерелаDahal, Yuba Raj. "Equilibrium and kinetic factors in protein crystal growth." Diss., Kansas State University, 2017. http://hdl.handle.net/2097/36220.
Повний текст джерелаDepartment of Physics
Jeremy D. Schmit
Diseases such as Alzheimer’s, Parkinson’s, eye lens cataracts, and Type 2 diabetes are the results of protein aggregation. Protein aggregation is also a problem in pharmaceutical industry for designing protein based drugs for long term stability. Disordered states such as precipitates and gels and ordered states such as crystals, micro tubules and capsids are both possible outcomes of protein–protein interaction. To understand the outcomes of protein–protein interaction and to find the ways to control forces, it is required to study both kinetic and equilibrium factors in protein–protein interactions. Salting in/salting out and Hofmeister effects are familiar terminologies used in protein science field from more than a century to represent the effects of salt on protein solubility, but they are yet to be understood theoretically. Here, we build a theory accounting both attractive and repulsive electrostatic interactions via the Poisson Boltzmann equation, ion–protein binding via grand cannonical partition function and implicit ion–water interaction using hydrated ion size, for describing salting in/salting out phenomena and Hofmeister and/or salt specific effect. Our model free energy includes Coulomb energy, salt entropy and ion–protein binding free energy. We find that the salting in behavior seen at low salt concentration near the isoelectric point of the protein is the output of Coulomb energy such that the addition of salt not only screens dipole attraction but also it enhances the monopole repulsion due to anion binding. The salting out behavior appearing after salting in at high salt concentration is due to a salt mediated depletion interaction. We also find that the salting out seen far from the isoelectric point of the protein is dominated by the salt entropy term. At low salt, the dominant effect comes from the entropic cost of confining ions within the aggregates and at high salt, the dominant effect comes from the entropy gain by ions in solution by enhancing the depletion attraction. The ion size has significant effects on the entropic term which leads to the salt specificity in the protein solubility. Crystal growth of anisotropic and fragile molecules such as proteins is a challenging task because kinetics search for a molecule having the correct binding state from a large ensemble of molecules. In the search process, crystal growth might suffer from a kinetic trap called self–poisoning. Here, we use Monte Carlo simulation to show why protein crystallization is vulnerable to the poisoning and how one can avoid such trap or recover crystal growth from such trap during crystallization. We show that self–poisoning requires only three minimal ingredients and these are related to the binding affinity of a protein molecule and its probability of occurrence. If a molecule attaches to the crystal in the crystallographic state then its binding energy will be high but in protein system this happens with very low probability (≈ 10−5). On the other hand, non–crystallographic binding is energetically weak, but it is highly probable to happen. If these things are realized, then it will not be surprising to encounter with self–poisoning during protein crystallization. The only way to recover or avoid poisoning is to alter the solution condition slightly such as by changing temperature or salt concentration or protein concentration etc.
Woo, Robyn Lai-wun. "Crystal growth and properties of indium phosphide nanowires." Diss., Restricted to subscribing institutions, 2008. http://proquest.umi.com/pqdweb?did=1692370461&sid=1&Fmt=2&clientId=1564&RQT=309&VName=PQD.
Повний текст джерелаSuccaw, Gary Lee. "Dynamics of crystal growth of self-assembling systems /." view abstract or download file of text, 2004. http://wwwlib.umi.com/cr/uoregon/fullcit?p3136448.
Повний текст джерелаTypescript. Includes vita and abstract. Includes bibliographical references (leaves 209-215). Also available for download via the World Wide Web; free to University of Oregon users.
Rocco, Luisa. "Crystal growth and physical properties of helimagnetic oxides." Doctoral thesis, Universita degli studi di Salerno, 2017. http://hdl.handle.net/10556/2572.
Повний текст джерелаThis work is focused on two helimagnetic materials: Ba2CuGe2O7 and Cu3Nb2O8. Recent studies report a number of interesting anisotropic proper- ties [1, 2, 3]. Ba2CuGe2O7 melilite oxide shows a complex magnetic behaviour, indeed it is known that at low temperature the system undergoes a transition from a paramagnetic phase to an incommensurate antiferromagnetic cycloid spin structure. Applying a magnetic field, additional magnetic transitions take place, as for example a spin-cone phase [3]. Moreover, Ba2CuGe2O7 shows also multiferroic properties [1]. Several works report that the physical properties of melilite oxides mainly depend on the nature of the transition metal ion, thus interesting proper- ties could emerge in mixed melilite oxides. In this work Ba2MGe2O7 with M=Cu,Ni and Mn have been studied. Cu3Nb2O8 is an unusual helimagnetic compound that undergoes a series of magnetic ordering at low temperature. Development of electric polarization P has been reported at TN=25K corresponding to emergence of a non-collinear helicoidal ordering. P is oriented perpendicularly to the common plane of rotation of the spins. This observation cannot be reconciled with the conven- tional theory developed for cycloidal multiferroics [2]. The study of all these complex anisotropic phenomena requires the availability of good single crystals. In this thesis, an investigation on crystal growth conditions of Ba2MGe2O7 and of Cu3Nb2O8 will be presented [4, 5]. Single crystal samples are vital to study the physical properties exhibited by compounds which have high magnetic/ferroelectric anisotropy where significantly different behaviour is seen along different crystallographic directions. Preliminarily, high quality polycrystalline powders have been prepared for all compounds, indeed this is a critical point to grow pure crystalline samples. 1 Abstract 2 In this work the procedure to synthesize polycrystalline powders with high purity is reported. Moreover, by using powder X-ray diffraction and energy dispersive spectroscopy (EDS), the composition of the starting polycrystalline powder is checked. Successfully, the growth conditions to realize large and pure single crystals suitable for low temperature magnetometry and lattice dynamic studies are described. The chemical composition and the morphology of the crystals are investigated by X-ray diffraction and by scanning electron microscopy (SEM), with wave- length dispersive spectrometry (WDS). Furthermore, the excellent quality of the crystals is confirmed by rocking curve measurements. The X-ray Laue back reflection and electron backscattered diffraction (EBSD) techniques are used to orient single crystals specifically for selected experi- ments. To study the magnetic phase diagrams of grown crystals, magnetization measurement vs temperature is performed in the range 1.5 K
SIBILIA, MIRTA. "Organic semiconducting single crystal growth on naostructured matrices." Doctoral thesis, Università degli Studi di Trieste, 2017. http://hdl.handle.net/11368/2908140.
Повний текст джерелаAl-Tamimi, Mohammed A. "Growth of gallium nitride on silicon substrate using the interlayer growth technique." Ohio : Ohio University, 2001. http://www.ohiolink.edu/etd/view.cgi?ohiou1173462509.
Повний текст джерелаPerryman, L. J. "Cavity growth mechanism maps." Thesis, University of Surrey, 1988. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.381676.
Повний текст джерелаLloyd, Gareth Owen. "Crystal engineering of porosity." Thesis, Link to the online version, 2006. http://hdl.handle.net/10019/1087.
Повний текст джерелаRätsch, Christian. "Effects of strain on heteroepitaxial growth dynamics." Diss., Georgia Institute of Technology, 1994. http://hdl.handle.net/1853/30647.
Повний текст джерелаTong, Wusheng. "Chemical beam epitaxial growth of ZnS : growth kinetics and novel electroluminescent strutures." Diss., Georgia Institute of Technology, 1996. http://hdl.handle.net/1853/31012.
Повний текст джерелаSrivastava, Ankit. "Void Growth and Collapse in a Creeping Single Crystal." Thesis, University of North Texas, 2011. https://digital.library.unt.edu/ark:/67531/metadc84281/.
Повний текст джерелаMoh, Pak Yan. "Crystal growth of the metal-organic framework ZIF-8." Thesis, University of Manchester, 2012. https://www.research.manchester.ac.uk/portal/en/theses/crystal-growth-of-the-metalorganic-framework-zif8(03e7bf63-dc66-48f7-9786-86b98caaf6eb).html.
Повний текст джерелаBrendel, Lothar. "Lebensdauer lagenweisen Kristallwachstums Lifetime of layer wise crystal growth /." [S.l. : s.n.], 2001. http://deposit.ddb.de/cgi-bin/dokserv?idn=965481476.
Повний текст джерелаBrendel, Lothar. "Lebensdauer lagenweisen Kristallwachstums - Lifetime of Layer-Wise Crystal Growth." Gerhard-Mercator-Universitaet Duisburg, 2002. http://www.ub.uni-duisburg.de/ETD-db/theses/available/duett-09272002-010843/.
Повний текст джерелаZhumekenov, Ayan A. "Halide Perovskite Single Crystals: Design, Growth, and Characterization." Diss., 2020. http://hdl.handle.net/10754/664934.
Повний текст джерелаHsia, Ying-Ting, and 夏英庭. "Zone-Leveling Czochralski Growth of Lithium Niobate Crystals-Crystal Diameter Control and Hot-Zone Design." Thesis, 2004. http://ndltd.ncl.edu.tw/handle/30544748039818108456.
Повний текст джерела國立臺灣大學
化學工程學研究所
92
In industry, lithium niobate (LN) single crystals are usually grown by the Czochralski (Cz) method. Because the Cz growth is a batch process, the distribution of dopant concentration in not uniform in the growth direction direction due to segregation. With a continuous solid feeding, this problem can be improved greatly by the zone-leveling Czochralski (ZLCz) method. Nevertheless, the ZLCz LN growth still has problems in diameter control and cracking of the crystal. In principle, the ZLCz method is a self-stabilized system, and the crystal diameter could be controlled by the temperature gradient above the melt level. Unfortunately, due to the end effect of the thermal environment, a constant diameter growth is hard to achieve. In this study, an upper weighting system was designed, and applied successfully to the diameter control of LN growth. The diameter variation of a 4-cm-diameter crystal over 9 cm in length was below 3%. On the other hand, the crystal cracking was found to be the cause of a large thermal gradient of over 20oC/cm for a 2-in-diameter crystal having the growth rate of 3mm/h. By using a heat pipe and a cover made of platinum, the region having smaller thermal gradients was extended to more than 9cm. As a result, a cracking-free single crystal could be easily grown.
Winkenwerder, Wyatt August 1981. "Surface chemistry of FeHx with dielectric surfaces : towards directed nanocrystal growth." 2008. http://hdl.handle.net/2152/17825.
Повний текст джерелаtext