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Статті в журналах з теми "Cryogenic electronic"

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Автор: Grafiati

Опубліковано: 14 березня 2023

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1

KAMIOKA, YASUHARU. "Cryogenics and Cryogenic Technology." Journal of the Institute of Electrical Engineers of Japan 123, no. 12 (2003): 786–87. http://dx.doi.org/10.1541/ieejjournal.123.786.

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2

Fitelson, Michael M. "Cryogenic electronic systems." Physica C: Superconductivity 372-376 (August 2002): 189–93. http://dx.doi.org/10.1016/s0921-4534(02)00651-2.

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3

McIntyre, Peter. "Testing of the Superconducting Magnet and Cryogenics for the AMS-02 Experiment." IEEE Transactions on Applied Superconductivity 21, no. 3 (June 2011): 1868–71. http://dx.doi.org/10.1109/tasc.2010.2087731.

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Анотація:

The superconducting magnet, cryogenics, and detector systems of the AMS experiment was fully integrated and tested in test beam at CERN during 2009. In Spring 2010 the experiment underwent thermal vacuum tests at ESTEC, where it was operated in conditions simulating those that will pertain in orbit. All elements of the superconducting magnet and cryogenics performed as designed, and equilibrium operation was attained at several values of vacuum case temperature. Details of the tests are presented. A thermal model of the overall cryogenic system was calibrated from those measurements. The model was used to predict the cryogenic lifetime of the experiment, as it would be staged on ISS, to be (28 ± 6) months.

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4

Buchanan, Ernest D., Dominic J. Benford, Joshua B. Forgione, S. Harvey Moseley, and Edward J. Wollack. "Cryogenic applications of commercial electronic components." Cryogenics 52, no. 10 (October 2012): 550–56. http://dx.doi.org/10.1016/j.cryogenics.2012.06.017.

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5

Dahlberg, Peter D., Allison H. Squires, Annina M. Sartor, Haijun Liu, Robert E. Blankenship, and W. E. Moerner. "Cryogenic Dissection of the Phycobilisome's Electronic Structure." Biophysical Journal 114, no. 3 (February 2018): 169a. http://dx.doi.org/10.1016/j.bpj.2017.11.943.

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6

Haldar, P., H. Ye, H. Efstathiadis, J. Raynolds, M. J. Hennessy, O. M. Mueller, and E. K. Mueller. "Improving Performance of Cryogenic Power Electronics." IEEE Transactions on Appiled Superconductivity 15, no. 2 (June 2005): 2370–75. http://dx.doi.org/10.1109/tasc.2005.849668.

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7

Claassen, J. H. "Inductor Design for Cryogenic Power Electronics." IEEE Transactions on Appiled Superconductivity 15, no. 2 (June 2005): 2385–88. http://dx.doi.org/10.1109/tasc.2005.849678.

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8

Szczepaniak, Urszula, Robert Kołos, Marcin Gronowski, Michèle Chevalier, Jean-Claude Guillemin, Michał Turowski, Thomas Custer, and Claudine Crépin. "Cryogenic Photochemical Synthesis and Electronic Spectroscopy of Cyanotetracetylene." Journal of Physical Chemistry A 121, no. 39 (September 25, 2017): 7374–84. http://dx.doi.org/10.1021/acs.jpca.7b07849.

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9

Tanaka, Toshikatsu, and Isidor Sauers. "Editorial - Cryogenic dielectrics." IEEE Transactions on Dielectrics and Electrical Insulation 15, no. 3 (June 2008): 619. http://dx.doi.org/10.1109/tdei.2008.4543096.

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10

Divyasheesh, Viplove, and Rakesh Jain. "Feasibility of Quantum Computers in Cryogenic Systems." International Journal of Engineering and Computer Science 9, no. 01 (January 21, 2020): 24919–20. http://dx.doi.org/10.18535/ijecs/v9i01.4412.

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Анотація:

Quantum computers consist of a quantum processor – sets of quantum bits or qubits operating at an extremely low temperature – and a classical electronic controller to read out and control the processor. The machines utilize the unusual properties of matter at extremely small scales – the fact that a qubit, can represent “1” and “0” at the same time, a phenomenon known as superposition. (In traditional digital computing, transistors in silicon chips can exist in one of two states represented in binary by a 1 or 0 not both). Under the right conditions, computations carried out with qubits are equivalent to numerous classical computations performed in parallel, thus greatly enhancing computing power compared to today’s powerful supercomputers and the ability to solve complex problems without the sort of experiments necessary to generate quantum phenomena. this technology is unstable and needs to be stored in a cool environment for faster and more secure operation.In this paper, we discuss the possibility of integrating quantum computers with electronics at deep cryogenic temperatures.

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11

Ardron, M. R., P. G. J. Lucas, T. Onions, M. D. J. Terrett, and M. S. Thurlow. "Rotating cryogenic platform." Physica B: Condensed Matter 165-166 (August 1990): 55–56. http://dx.doi.org/10.1016/s0921-4526(90)80877-l.

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12

Skrbek, L., J. J. Niemela, and R. J. Donnelly. "Cryogenic fluid dynamics." Physica B: Condensed Matter 280, no. 1-4 (May 2000): 41–42. http://dx.doi.org/10.1016/s0921-4526(99)01438-6.

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13

Noudeviwa, Albert, Yannick Roelens, François Danneville, Aurélien Olivier, Nicolas Wichmann, Nicolas Waldhoff, Sylvie Lepilliet, et al. "Sb-HEMT: Toward 100-mV Cryogenic Electronics." IEEE Transactions on Electron Devices 57, no. 8 (August 2010): 1903–9. http://dx.doi.org/10.1109/ted.2010.2050109.

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14

ALEKSANDROVA, I. V., E. R. KORESHEVA, and I. E. OSIPOV. "Free-standing targets for applications to ICF." Laser and Particle Beams 17, no. 4 (October 1999): 713–27. http://dx.doi.org/10.1017/s0263034699174160.

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Анотація:

In conventional inertial confinement fusion (ICF), a high power laser system is used to compress a cryogenic target and create energy. One of the challenges for ICF cryogenics is producing the homogeneous and uniform fuel on the inside surface of a spherical polymer shell. In this report, we will discuss a conceptual approach based on freestanding targets and the results of our recent and current developments.

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15

Antoniou, Nicholas. "Failure Analysis of Electronic Material Using Cryogenic FIB-SEM." EDFA Technical Articles 15, no. 3 (August 1, 2013): 12–19. http://dx.doi.org/10.31399/asm.edfa.2013-3.p012.

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Abstract FIB milling is difficult if not impossible with III-V compound semiconductors and certain interconnect metals because the materials do not react well with the gallium used in most FIB systems. This article discusses the nature of the problem and explains how cryogenic FIB-SEM techniques provide a solution. It describes the basic setup of a FIB-SEM system and provides examples of its use on InN nanocrystals, GaN films, and copper-containing multilayer photovoltaic materials.

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16

Mar, D. J., R. M. Westervelt, and P. F. Hopkins. "Cryogenic field‐effect transistor with single electronic charge sensitivity." Applied Physics Letters 64, no. 5 (January 31, 1994): 631–33. http://dx.doi.org/10.1063/1.111072.

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17

Garcia, E., C. Bales, W. Patterson, A. Zaslavsky, and V. F. Mitrović. "Cryogenic probe for low-noise, high-frequency electronic measurements." Review of Scientific Instruments 93, no. 10 (October 1, 2022): 103902. http://dx.doi.org/10.1063/5.0106239.

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Анотація:

The design and performance of a low-noise, modular cryogenic probe, which is applicable to a wide range of measurements over a broad range of working frequencies, temperatures, and magnetic fields, is presented. The design of the probe facilitates the exchange of sample holders and sample-stage amplifiers, which, combined with its characteristic low transmission and reflection loss, make this design suitable for high precision or low sensitivity measurements. The specific example of measuring the shot noise of magnetic tunnel junctions is discussed. We highlight various design characteristics chosen specifically to expand the applicability of the probe to measurement techniques such as nuclear magnetic resonance.

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18

Babus'Haq, Ramiz, and S. Douglas Probert. "Cryogenic and immersion cooling of optics and electronic equipment." Applied Energy 39, no. 3 (January 1991): 259–60. http://dx.doi.org/10.1016/0306-2619(91)90013-n.

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19

Dillon, A., K. McCusker, J. Van Dyke, B. Isler, and M. Christiansen. "Thermal interface material characterization for cryogenic electronic packaging solutions." IOP Conference Series: Materials Science and Engineering 278 (December 2017): 012054. http://dx.doi.org/10.1088/1757-899x/278/1/012054.

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20

Weber, E. M. M., H. Vezin, J. G. Kempf, G. Bodenhausen, D. Abergél, and D. Kurzbach. "Anisotropic longitudinal electronic relaxation affects DNP at cryogenic temperatures." Physical Chemistry Chemical Physics 19, no. 24 (2017): 16087–94. http://dx.doi.org/10.1039/c7cp03242k.

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21

Meister, T. G., G. Ya Zelikina, and O. M. Artamonova. "Electronic absorption spectra of cryogenic systems with hydrogen bonds." Journal of Molecular Structure 196 (May 1989): 193–99. http://dx.doi.org/10.1016/0022-2860(89)85016-1.

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22

Zhang, Haidong, Xianguo Yan, Qiang Hou, and Zhi Chen. "Effect of Cyclic Cryogenic Treatment on Wear Resistance, Impact Toughness, and Microstructure of 42CrMo Steel and Its Optimization." Advances in Materials Science and Engineering 2021 (January 11, 2021): 1–13. http://dx.doi.org/10.1155/2021/8870282.

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Анотація:

Cyclic cryogenic treatment, a major cycle accompanied by zero or more subsidiary cycles, was conducted on the hardened 42CrMo steel using orthogonal design method to investigate the effect of different parameters (cryogenic temperature, holding time, and cycles number) of cryogenic treatment on wear resistance and impact toughness of the steel. Range analysis was performed to obtain the influencing order of the three parameters and their optimum values. The results show that after cryogenic treatment, the steel exhibits higher wear resistance and impact toughness, whereas no significant change in hardness. For wear resistance, the influencing order of parameters is cryogenic temperature, holding time, and cycles number, and the optimum values of the parameters are −160°C, 24 h and two cycles, respectively. For impact toughness, the influencing order of parameters is cryogenic temperature, cycles number, and holding time, and the optimum values are −120°C, 24 h and three cycles, respectively. The wear topography and fracture topography were examined using scanning electronic microscopy (SEM) to investigate the wear mechanism and fracture mechanism of the steel after cryogenic treatment, respectively. The results show that after cryogenic treatment, the wear mechanism is the combination of abrasive wear and adhesive wear with oxidative wear, and the fracture mechanism is a quasicleavage fracture. The microstructure was also examined by SEM to investigate the influencing mechanism of cryogenic treatment for improving wear resistance and impact toughness of the steel. It suggests that more precipitation of fine carbides dispersively distributed in the matrix is responsible for the beneficial effect of cryogenic treatment on wear resistance and impact toughness of the steel.

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23

Ivanov, Boris I., Dmitri I. Volkhin, Ilya L. Novikov, Dmitri K. Pitsun, Dmitri O. Moskalev, Ilya A. Rodionov, Evgeni Il’ichev, and Aleksey G. Vostretsov. "A wideband cryogenic microwave low-noise amplifier." Beilstein Journal of Nanotechnology 11 (September 30, 2020): 1484–91. http://dx.doi.org/10.3762/bjnano.11.131.

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A broadband low-noise four-stage high-electron-mobility transistor amplifier was designed and characterized in a cryogen-free dilution refrigerator at the 3.8 K temperature stage. The obtained power dissipation of the amplifier is below 20 mW. In the frequency range from 6 to 12 GHz its gain exceeds 30 dB. The equivalent noise temperature of the amplifier is below 6 K for the presented frequency range. The amplifier is applicable for any type of cryogenic microwave measurements. As an example we demonstrate here the characterization of the superconducting X-mon qubit coupled to an on-chip coplanar waveguide resonator.

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24

Basu, Tuhin Shuvra, Simon Diesch, and Elke Scheer. "Single-electron transport through stabilised silicon nanocrystals." Nanoscale 10, no. 29 (2018): 13949–58. http://dx.doi.org/10.1039/c8nr01552j.

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25

Zheleznov, D. S., V. V. Zelenogorskii, E. V. Katin, I. B. Mukhin, O. V. Palashov, and Efim A. Khazanov. "Cryogenic Faraday isolator." Quantum Electronics 40, no. 3 (May 26, 2010): 276–81. http://dx.doi.org/10.1070/qe2010v040n03abeh014247.

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26

Tuncer, E., I. Sauers, D. R. James, A. R. Ellis, M. Pace, K. L. More, S. Sathyamurthy, J. Woodward, and A. J. Rondinone. "Nanodielectrics for Cryogenic Applications." IEEE Transactions on Applied Superconductivity 19, no. 3 (June 2009): 2354–58. http://dx.doi.org/10.1109/tasc.2009.2018198.

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27

Chien, Wei-Chen, Shun-Jhou Jhan, Kuei-Lin Chiu, Yu-xi Liu, Eric Kao, and Ching-Ray Chang. "Cryogenic Materials and Circuit Integration for Quantum Computers." Journal of Electronic Materials 49, no. 11 (September 28, 2020): 6844–58. http://dx.doi.org/10.1007/s11664-020-08442-x.

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Анотація:

Abstract Over the last decade, quantum computing has experienced significant changes and captured worldwide attention. In particular, superconducting qubits have become the leading candidates for scalable quantum computers, and a number of cryogenic materials have scientifically demonstrated their potential uses in constructing qubit chips. However, because of insufficient coherence time, establishing a robust and scalable quantum platform is still a long-term goal. Another consideration is the control circuits essential to initializing, operating and measuring the qubits. To keep noise low, control circuits in close proximity to the qubits require superior reliability in the cryogenic environment. The realization of the quantum advantage demands qubits with appropriate circuitry designs to maintain long coherence times and entanglement. In this work, we briefly summarize the current status of cryogenic materials for qubits and discuss typical cryogenic circuitry designs and integration techniques for qubit chips. In the end, we provide an assessment of the prospects of quantum computers and some other promising cryogenic materials.

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28

van Niekerk, P. C., and C. J. Foarie. "Cryogenic cmos-based control system for superconductor electronics." SAIEE Africa Research Journal 99, no. 2 (June 2008): 43–48. http://dx.doi.org/10.23919/saiee.2008.9485228.

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29

Gui, Handong, Ruirui Chen, Jiahao Niu, Zheyu Zhang, Leon M. Tolbert, Fei Fred Wang, Benjamin J. Blalock, Daniel Costinett, and Benjamin B. Choi. "Review of Power Electronics Components at Cryogenic Temperatures." IEEE Transactions on Power Electronics 35, no. 5 (May 2020): 5144–56. http://dx.doi.org/10.1109/tpel.2019.2944781.

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30

Ye, Hua, Harry Efstathiadis, and Pradeep Haldar. "Numerical Thermal Simulation of Cryogenic Power Modules Under Liquid Nitrogen Cooling." Journal of Electronic Packaging 128, no. 3 (August 15, 2005): 267–72. http://dx.doi.org/10.1115/1.2229226.

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Анотація:

Understanding the thermal performance of power modules under liquid nitrogen cooling is important for the design of cryogenic power electronic systems. When the power device is conducting electrical current, heat is generated due to Joule heating. The heat needs to be efficiently dissipated to the ambient in order to keep the temperature of the device within the allowable range; on the other hand, it would be advantageous to boost the current levels in the power devices to the highest possible level. Projecting the junction temperature of the power module during cryogenic operation is a crucial step in designing the system. In this paper, we present the thermal simulations of two different types of power metal-oxide semiconductor field effect transistor modules used to build a cryogenic inverter under liquid nitrogen pool cooling and discussed their implications on the design of the system.

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31

Li, Tiaoyang, Mengchuan Tian, Shengman Li, Mingqiang Huang, Xiong Xiong, Qianlan Hu, Sichao Li, Xuefei Li, and Yanqing Wu. "Black Phosphorus Radio Frequency Electronics at Cryogenic Temperatures." Advanced Electronic Materials 4, no. 8 (June 26, 2018): 1800138. http://dx.doi.org/10.1002/aelm.201800138.

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32

Yung, Chris S., and Brian H. Moeckly. "Magnesium Diboride Flexible Flat Cables for Cryogenic Electronics." IEEE Transactions on Applied Superconductivity 21, no. 3 (June 2011): 107–10. http://dx.doi.org/10.1109/tasc.2010.2080655.

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33

Forsyth, A. J., S. Y. Yang, P. A. Mawby, and P. Igic. "Measurement and modelling of power electronic devices at cryogenic temperatures." IEE Proceedings - Circuits, Devices and Systems 153, no. 5 (2006): 407. http://dx.doi.org/10.1049/ip-cds:20050359.

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34

Szczepaniak, Urszula, Robert Kołos, Marcin Gronowski, Michèle Chevalier, Jean-Claude Guillemin, and Claudine Crépin. "Synthesis and Electronic Phosphorescence of Dicyanooctatetrayne (NC10N) in Cryogenic Matrixes." Journal of Physical Chemistry A 122, no. 25 (June 6, 2018): 5580–88. http://dx.doi.org/10.1021/acs.jpca.8b02700.

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35

Shively, R. "Submerged cryogenic motor materials development." IEEE Electrical Insulation Magazine 19, no. 3 (May 2003): 7–11. http://dx.doi.org/10.1109/mei.2003.1203016.

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36

Zagorec-Marks, Wyatt, James E. T. Smith, Madison M. Foreman, Sandeep Sharma, and J. Mathias Weber. "Intrinsic electronic spectra of cryogenically prepared protoporphyrin IX ions in vacuo – deprotonation-induced Stark shifts." Physical Chemistry Chemical Physics 22, no. 36 (2020): 20295–302. http://dx.doi.org/10.1039/d0cp03614e.

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Анотація:

We present electronic spectra containing the Q_x and Q_y absorption bands of singly and doubly deprotonated protoporphyrin IX, prepared as mass selected ions in vacuo at cryogenic temperatures, revealing vibronic structure of both bands.

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37

Park, D. H., V. Yun, J. Luo, A. K. ‐Y Jen, and W. N. Herman. "EO polymer at cryogenic temperatures." Electronics Letters 52, no. 20 (September 2016): 1703–5. http://dx.doi.org/10.1049/el.2016.1406.

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38

Parker, Matthew. "Controlling qubits with cryogenic devices." Nature Electronics 5, no. 3 (March 2022): 125. http://dx.doi.org/10.1038/s41928-022-00740-y.

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39

Verhagen, Tim, Valentino L. P. Guerra, Golam Haider, Martin Kalbac, and Jana Vejpravova. "Towards the evaluation of defects in MoS2 using cryogenic photoluminescence spectroscopy." Nanoscale 12, no. 5 (2020): 3019–28. http://dx.doi.org/10.1039/c9nr07246b.

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Electronic and optical properties of two-dimensional transition metal dichalcogenides are strongly influenced by defects. Cryogenic photoluminescence spectroscopy is a superb tool for characterization of the nature and density of these defects.

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40

Jin, Renxi, Shuo Zhao, Chong Liu, Meng Zhou, Gihan Panapitiya, Yan Xing, Nathaniel L. Rosi, James P. Lewis, and Rongchao Jin. "Controlling Ag-doping in [AgxAu25−x(SC6H11)18]−nanoclusters: cryogenic optical, electronic and electrocatalytic properties." Nanoscale 9, no. 48 (2017): 19183–90. http://dx.doi.org/10.1039/c7nr05871c.

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Анотація:

Synthesis of heavily Ag-doped [Ag_xAu_25−x(SC₆H₁₁)₁₈]⁻nanoclusters by a one-phase method and their cryogenic optical, electronic and electrocatalytic properties have been demonstrated.

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41

Müller, David, and Otto Dopfer. "Vibronic optical spectroscopy of cryogenic flavin ions: the O2+ and N1 tautomers of protonated lumiflavin." Physical Chemistry Chemical Physics 22, no. 33 (2020): 18328–39. http://dx.doi.org/10.1039/d0cp03650a.

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Анотація:

The electronic structure of cryogenic protonated lumiflavin ions probed by photodissociation spectroscopy and density functional theory calculations reveals the presence of the two most stable tautomers protonated at the O2+ and N1 positions.

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42

Skrbek, L. "Turbulence in cryogenic helium." Physica C: Superconductivity 404, no. 1-4 (May 2004): 354–62. http://dx.doi.org/10.1016/j.physc.2003.11.030.

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43

Johansen, Tom K., Oleksandr Rybalko, Vitaliy Zhurbenko, Berhanu Bulcha, and Jeffrey Hesler. "A comprehensive study of cryogenic cooled millimeter-wave frequency multipliers based on GaAs Schottky-barrier varactors." International Journal of Microwave and Wireless Technologies 10, no. 2 (January 28, 2018): 217–26. http://dx.doi.org/10.1017/s1759078717001490.

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Анотація:

AbstractThe benefit of cryogenic cooling on the performance of millimeter-wave GaAs Schottky-barrier varactor-based frequency multipliers has been studied. For this purpose, a dedicated compact model of a GaAs Schottky-barrier varactor using a triple-anode diode stack has been developed for use with a commercial RF and microwave CAD tool. The model implements critical physical phenomena such as thermionic-field emission current transport at cryogenic temperatures, temperature dependent mobility, reverse breakdown, self-heating, and high-field velocity saturation effects. A parallel conduction model is employed in order to include the effect of barrier inhomogeneities which is known to cause deviation from the expected I--V characteristics at cryogenic temperatures. The developed model is shown to accurately fit the I--V --T dataset from 25 to 295 K measured on the varactor diode stack. Harmonic balance simulations using the model are used to predict the efficiency of a millimeter-wave balanced doubler from room to cryogenic temperatures. The estimation is verified experimentally using a 188 GHz balanced doubler cooled down to 77 K. The model has been further verified down to 14 K using a 78 GHz balanced doubler.

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44

Gira, Gabriele, Elena Ferraro, and Mattia Borgarino. "On the VCO/Frequency Divider Interface in Cryogenic CMOS PLL for Quantum Computing Applications." Electronics 10, no. 19 (October 1, 2021): 2404. http://dx.doi.org/10.3390/electronics10192404.

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Анотація:

The availability of quantum microprocessors is mandatory, to efficiently run those quantum algorithms promising a radical leap forward in computation capability. Silicon-based nanostructured qubits appear today as a very interesting approach, because of their higher information density, longer coherence times, fast operation gates, and compatibility with the actual CMOS technology. In particular, thanks to their phase noise properties, the actual CMOS RFIC Phase-Locked Loops (PLL) and Phase-Locked Oscillators (PLO) are interesting circuits to synthesize control signals for spintronic qubits. In a quantum microprocessor, these circuits should operate close to the qubits, that is, at cryogenic temperatures. The lack of commercial cryogenic Design Kits (DK) may make the interface between the Voltage Controlled Oscillator (VCO) and the Frequency Divider (FD) a serious issue. Nevertheless, currently this issue has not been systematically addressed in the literature. The aim of the present paper is to investigate the VCO/FD interface when the temperature drops from room to cryogenic. To this purpose, physical models of electronics passive/active devices and equivalent circuits of VCO and the FD were developed at room and cryogenic temperatures. The modeling activity has led to design guidelines for the VCO/FD interface, useful in the absence of cryogenic DKs.

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45

Dulf, Eva H., and Clement Festila. "Sensors for Cryogenic Isotope-Separation Column." Sensors 20, no. 14 (July 13, 2020): 3890. http://dx.doi.org/10.3390/s20143890.

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Анотація:

Cryogenic isotope-separation equipment is special, encountered in relative few research centers in the world. In addition to the main equipment used in the operation column, a broad range of measuring devices and actuators are involved in the technological process. The proper sensors and transducers exhibit special features; therefore, common, industrial versions cannot be used. Three types of original sensors with electronic adapters are presented in the present study: a sensor for the liquid carbon monoxide level in the boiler, a sensor for the liquid nitrogen level in the condenser and a sensor for the electrical power dissipated in the boiler. The integration of these sensors in the pilot equipment is needed for comprehensive system monitoring and control. The sensors were tested on the experimental equipment from the National Institute for Research and Development of Isotopic and Molecular Technologies from Cluj-Napoca.

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46

WU Duo, 吴. 铎., 王. 凯. WANG Kai, 叶. 新. YE Xin, 王玉鹏 WANG Yu-peng, and 方. 伟. FANG Wei. "Space Cryogenic Absolute Radiometer." Chinese Journal of Luminescence 40, no. 8 (2019): 1015–21. http://dx.doi.org/10.3788/fgxb20194008.1015.

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47

Beckers, Arnout, Farzan Jazaeri, and Christian Enz. "Inflection Phenomenon in Cryogenic MOSFET Behavior." IEEE Transactions on Electron Devices 67, no. 3 (March 2020): 1357–60. http://dx.doi.org/10.1109/ted.2020.2965475.

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48

de Souza, Michelly, Marcelo A. Pavanello, Renan D. Trevisoli, Rodrigo T. Doria, and Jean-Pierre Colinge. "Cryogenic Operation of Junctionless Nanowire Transistors." IEEE Electron Device Letters 32, no. 10 (October 2011): 1322–24. http://dx.doi.org/10.1109/led.2011.2161748.

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49

Ye, Hua, Changwoo Lee, Randy W. Simon, and Pradeep Haldar. "Development of cryogenic power modules for superconducting hybrid power electronic system." International Journal of Materials and Product Technology 34, no. 1/2 (2009): 188. http://dx.doi.org/10.1504/ijmpt.2009.022412.

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50

Xu, Shuang, James E. T. Smith, and J. Mathias Weber. "The electronic spectrum of cryogenic ruthenium-tris-bipyridine dications in vacuo." Journal of Chemical Physics 145, no. 2 (July 14, 2016): 024304. http://dx.doi.org/10.1063/1.4955262.

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