Дисертації з теми "Conductive oxide"
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Boltz, Janika [Verfasser]. "Sputtered tin oxide and titanium oxide thin films as alternative transparent conductive oxides / Janika Boltz." Aachen : Hochschulbibliothek der Rheinisch-Westfälischen Technischen Hochschule Aachen, 2012. http://d-nb.info/1019850485/34.
Yavas, Hakan. "Development Of Indium Tin Oxide (ito) Nanoparticle Incorporated Transparent Conductive Oxide Thin Films." Master's thesis, METU, 2012. http://etd.lib.metu.edu.tr/upload/12614475/index.pdf.
ITO sols&rdquo
and &ldquo
ITO nanoparticle-incorporated hybrid ITO coating sols&rdquo
were prepared using indium chloride (InCl3
Dinh, Minh A. "Hydrogen in transition metal doped transparent conductive oxide SnO₂." Thesis, Massachusetts Institute of Technology, 2020. https://hdl.handle.net/1721.1/127301.
Cataloged from the official PDF of thesis.
Includes bibliographical references (pages 83-85).
First-principles, thermodynamic, and kinetic Monte Carlo methods are used to study the behavior of hydrogen defects in doped-tin oxides. The calculated results indicate that Mo-, W-, Nb-, F-doped SnO2 are the best doped-tin oxides at reducing hydrogen solubility in their matrices. We expect these oxides also to be the best for removing hydrogen via proton reduction and hydrogen evolution from their surfaces due to the relatively high electron concentration they can have. Especially, W-doped is also found to perform best as a hydrogen blocker at all temperature range due to its ability to block hydrogen diffusion in the form of substitutional defect at low-temperature regime around 600K, and its nature to increase tin cation vacancies blocking hydrogen diffusion at high-temperature regime around 1200K. The computational approach developed here can accelerate the design of insulating materials where hydrogen reactions and proton transport are important.
by Minh Anh Dinh.
S.M.
S.M. Massachusetts Institute of Technology, Department of Nuclear Science and Engineering
DIANETTI, MARTINA. "Transparent Conductive Oxide-free hybrid and organic solar cells." Doctoral thesis, Università degli Studi di Roma "Tor Vergata", 2014. http://hdl.handle.net/2108/202335.
Song, Dengyuan Centre for Photovoltaic Engineering UNSW. "Zinc oxide TCOs (Transparent Conductive Oxides) and polycrystalline silicon thin-films for photovoltaic applications." Awarded by:University of New South Wales. Centre for Photovoltaic Engineering, 2005. http://handle.unsw.edu.au/1959.4/29371.
Sechogela, Thulaganyo P. "Vanadium dioxide nanocomposite thin film embedded in zinc oxide matrix as tunable transparent conductive oxide." Thesis, University of the Western Cape, 2013. http://hdl.handle.net/11394/4529.
This project is aimed at fabricating a smart material. Zinc oxide and vanadium dioxide have received a great deal of attention in recent years because they are used in various applications. ZnO semiconductor in particular has a potential application in optoelectronic devices such as light emitting diodes (LED), sensors and in photovoltaic cell industry as a transparent electrode. VO2 also has found application in smart windows, solar technology and infrared smart devices. Hence the need to synthesis or fabricate a new smart material using VO2 and an active ZnO based nano-composites family in which ZnO matrix will be hosting thermally active VO2 nano-crystals is the basis of this study. Since VO2 behave as an MIT Mott’s type oxides and exhibits a thermally driven semiconductor-metal phase transition at about 68 oC and as a direct result ZnO:VO2 nano-composites would exhibit a reversible and modulated optical transmission in the infra-red (IR) while maintaining a constant optical transmission in the UV-Vis range. The synthesis is possible by pulsed laser deposition and ion implantation. Synthesis by pulsed laser deposition will involve thin films multilayer fabrication. ZnO buffer layer thin film will be deposited on the glass and ZnO single crystals and subsequent layer of VO2 and ZnO will be deposited on the substrate. X-ray diffraction (XRD) reveals that the series of ZnO thin films deposited by Pulsed Laser Deposition (PLD) on glass substrates has the hexagonal wurtzite structure with a c-axis preferential orientation. In addition the XRD results registered for VO2 samples indicate that all thin films exhibits a monoclinic VO2 (M) phase. UV-Vis NIR measurements of multilayered structures showed the optical tunability at the near-IR region and an enhanced transparency (>30 %) at the visible range.
Riedel, Christoph Alexander. "Transparent conductive oxide based hybrid nanostructures for electro-optical modulation." Thesis, University of Southampton, 2018. https://eprints.soton.ac.uk/420940/.
Alquraini, Zahra. "Highly Conductive Solid Polymer Electrolytes: Poly(ethylene oxide)/LITFSI Blends." DigitalCommons@Robert W. Woodruff Library, Atlanta University Center, 2018. http://digitalcommons.auctr.edu/cauetds/145.
Huang, Long. "Copper Electrodeposition on Iridium, Ruthenium and Its Conductive Oxide Substrate." Thesis, University of North Texas, 2003. https://digital.library.unt.edu/ark:/67531/metadc4416/.
Livingstone, Veronica Jean. "One-Pot In-Situ Synthesis of Conductive Polymer/Metal Oxide Composites." University of Toledo / OhioLINK, 2020. http://rave.ohiolink.edu/etdc/view?acc_num=toledo158860469194691.
Auckett, Josie Elise. "Structural and physical studies of oxide ionic-conductive brownmillerite single crystals." Thesis, The University of Sydney, 2015. http://hdl.handle.net/2123/13668.
Shih, Grace Hwei-Pyng. "Nanostructure and Optoelectronic Phenomena in Germanium-Transparent Conductive Oxide (Ge:TCO) Composites." Diss., The University of Arizona, 2012. http://hdl.handle.net/10150/228175.
Balestrieri, Matteo. "Transparent conductive oxides with photon converting properties in view of photovoltaic applications : the cases of rare earth-doped zinc oxide and cerium oxide." Thesis, Strasbourg, 2014. http://www.theses.fr/2014STRAE019/document.
The objective of this thesis was to investigate the photon converting properties of rare earths (RE) ions embedded in transparent oxide hosts in view of potential application on silicon solar cells. In particular, the goal was to functionalize thin films that are already used in solar cells such as anti-Reflection coatings or transparent conductive oxides.Two host materials (ZnO and CeO2) have been selected, which are compatible with silicon solar cells.This work shows that RE-Doped transparent oxide films are a viable low-Cost solution for obtaining photon-Converting layers that can be applied on solar cells, but that achieving high efficiencies is much more difficult than it might appear in theory. Nevertheless, very valuable information has been obtained on the effect of the host material on the photon management properties and on the energy transfer mechanisms in these systems. In particular, the energy level diagram of some of the rare earth ions in the specific matrices has been reconstructed
Sun, Xinxin. "Conductive behaviour of carbon nanotube based composites." Thesis, Loughborough University, 2009. https://dspace.lboro.ac.uk/2134/6280.
Arbuzov, A. A., V. E. Muradyan, B. P. Tarasov, and E. A. Sokolov. "Preparation of Amino-Functionalized Graphene Sheets and their Conductive Properties." Thesis, Sumy State University, 2013. http://essuir.sumdu.edu.ua/handle/123456789/35639.
Tsai, Chih-Long. "Ceramic processing and electrochemical analysis of proton conductive solid oxide fuel cell." Thesis, Montana State University, 2010. http://etd.lib.montana.edu/etd/2010/tsai/TsaiC0510.pdf.
Pfeffer, Michael Ulrich [Verfasser], та Oliver [Akademischer Betreuer] Eibl. "Pseudo-γ aluminum oxide : A new transparent conductive oxide with outstanding structural properties / Michael Ulrich Pfeffer ; Betreuer: Oliver Eibl". Tübingen : Universitätsbibliothek Tübingen, 2020. http://d-nb.info/1203623097/34.
Book, Martin. "Magnetron sputtering of highly transparent p-conductive NiO thin films." Thesis, Uppsala universitet, Solcellsteknik, 2020. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-423322.
Zhu, Zhaozhao, and Zhaozhao Zhu. "Emerging Materials for Transparent Conductive Electrodes and Their Applications in Photovoltaics." Diss., The University of Arizona, 2017. http://hdl.handle.net/10150/623062.
Frroku, Saimir <1988>. "Nanoscale electrical characterization by advanced conductive atomic force microscopy techniques of all oxide heterojunctions." Master's Degree Thesis, Università Ca' Foscari Venezia, 2021. http://hdl.handle.net/10579/19670.
Winarski, David J. "Synthesis and Characterization of Transparent Conductive Zinc Oxide Thin Films by Sol-gel Spin Coating Method." Bowling Green State University / OhioLINK, 2015. http://rave.ohiolink.edu/etdc/view?acc_num=bgsu1434124579.
Hoyt-Lalli, Jennifer K. "Synthesis of Functionalized Polysiloxanes and Investigation of Highly Filled Thermally Conductive Microcomposites." Diss., Virginia Tech, 2002. http://hdl.handle.net/10919/30007.
Ph. D.
Kingdom, Rachel Michele. "Conducting Polymer Matrix Poly(2,2’-Bithiophene) Mercuric Metal Ion Incorporation." Wright State University / OhioLINK, 2009. http://rave.ohiolink.edu/etdc/view?acc_num=wright1259889438.
Wang, Sung-Li, and 王菘豊. "Fabrication and Analysis of Indium Gallium Oxide Transparent Conductive Oxide." Thesis, 2004. http://ndltd.ncl.edu.tw/handle/57150595771755302479.
國立臺灣大學
光電工程學研究所
92
There are two issues in this thesis. The first issue is the growth of indium gallium oxide thin film. We grow indium gallium oxide thin film successfully in two ways. One way is by photoelectrical chemical method (PEC method). The other way is by thermal evaporation. The second issue is the characteristics study of the indium gallium oxide thin film. After the growth of indium gallium oxide, we take some optical measurements such as transmission, reflection, and photoluminescence .Electrical measurements such as circle transmission line method (CTLM) and Hall measurement. Besides, SEM、EDX、XRD、XPS and surface profiler are also done on the samples in order to study the characteristics and quality of the oxide layer. Finally, we make a discussion on the characteristics and quality issue of indium gallium oxide film. Our indium gallium oxide film has 80% of transparency while photon energy below 3.54 eV. And the lowest resistivity(ρ) is 4x10-3Ω-cm .
Caldas, Mafalda Sofia Fonseca. "Stacks of alternating conductive and non-conductive oxides studied by ellipsometry." Master's thesis, 2018. http://hdl.handle.net/10362/58087.
Chien, Huang-pin, and 錢皇賓. "Wet Coating of Transparent Conductive Oxide (AZO) Film." Thesis, 2008. http://ndltd.ncl.edu.tw/handle/41304913102342763093.
國立中央大學
化學工程與材料工程研究所
96
Significant progress has been made in transparent conductive oxide (TCO) films, largely motivated by the emergence of LCD and solar cell industries. In the search for a cheaper and indium-free materials to replace the traditional ITO, aluminum-doped zinc oxide (AZO) has been the leading candidate. Therefore, the objective of this research is to identify experimentally the controlling factors that ultimately govern the transparency and electrical conductivity of AZO film. ZnO nanoparticles of size 5~6 nm have been successfully synthesized previously in our Lab by titrating zinc chloride with sodium hydroxide in ethylene glycol solution, followed by low temperature aging. However, such method has two serious drawbacks – the production of unwanted sodium chloride byproduct, and a low concentration (4 wt%). This would require multiple coatings and sintering needed to achieve the desired thickness. To achieve the desired AZO film thickness with a single coating, the concentration of ZnO solution must be about 50 wt%. At the same time the NaCl byproduct must be remove. Using PGME as a co-solvent to dissolve hexane in EG, ZnO nanoparticles were precipitaled while redisperse after evaporation of hexane. TGA analysis showed an increased in weight percent (64 wt%). After dilution with methanol to 30 wt%, the as-prepared film with one dip-coating cycle was sintered in air at 400oC. The resulting film showed a transparency of higher than 90% and a thickness of 300 nm as measured by SEM. Subsequent study involved the dopping of aluminum and sintering conditions on the electrical conductivity and transparency of AZO films. Variables sadas sintering atomsphere and temperature were also tested to study their respective impacts.
Chen, Bo-Chao, and 陳柏超. "Oxide-reduction Produced the Transparent Conductive Graphene Film." Thesis, 2013. http://ndltd.ncl.edu.tw/handle/58769854968320690907.
崑山科技大學
電子工程研究所
101
This study oxide-reduction produced the transparent conductive graphene film, a oxide-reduction method has the advantages of lower cost and technology,first graphite subjexcted tooxidation treatment,then produced graphene oxide with DI water were mixed, graphene oxide aqueous solution,the graphene oxide aqueous solution of aspin coating on a glass substrate,and in the environment of argon/hydrogen mixed gas reduction by heating to produce the transparent conductive graphene film. First, the X-ray diffraction (XRD), field emission scanning electron microscope (FE-SEM), energy dispersive spectroscopy (EDS), Raman spectroscopy analysis of the morphology of the film, the lattice structure and its constituent content by XRD analysis that at 10. Places a strong peak produced can be proved that the graphene oxide, observed by SEM at a concentration of 1 mg / ml are found in significant film channel, and in the lower 0.1,0.5 mg / ml two group of the surface with a uniform particle size, particle composition by EDS analyzes are recognized as carbon, Raman analysis of ID / IG> 1, I2D/IG <1.3, the more defects of the multi-graphene structure, then the UV-VIS spectrometer after that, as the concentration increases, the transmittance decreases, while that by the four-point probe sheet resistance, as the concentration increases, the sheet resistance decreases, the best argument for the reduction temperature 300 ℃ concentration 0.1 mg / ml ( 3 layer )
"Metal-Oxide Based Transparent Conductive Oxides and Thin Film Transistors for Flexible Electronics." Doctoral diss., 2011. http://hdl.handle.net/2286/R.I.8850.
Dissertation/Thesis
Ph.D. Materials Science and Engineering 2011
Lin, Shin-Wei, and 林仕尉. "Conductive transparent oxide applied to GaN Schottky barrier diodes." Thesis, 2005. http://ndltd.ncl.edu.tw/handle/04735008512118252762.
TSAI, DONG-HUN, and 蔡東翰. "Transparent Conductive Oxide of Crack Filling Flexible Substrate Technology." Thesis, 2016. http://ndltd.ncl.edu.tw/handle/685kg9.
南臺科技大學
光電工程系
104
Indium tin oxide (ITO) with good electro-optical properties has been widely used in display and touch panel nowadays. Currently substrates are still base on glass, but products will be lightweight, flexible and extremely high impact in the future, Therefore the flexible substrate will become the mainstream. In this study, that pre-cracked ITO to produce cracks by self-made bending me-chanical. When bending, individual bend radius 12mm, 10mm and 4mm repeatedly bent 1000 cycles. Then use the sputtering machine to deposited 20nm, 40nm and 60nm thickness in cracks. During deposited, administered flexible substrate a pre-strain. To investigate the above-described method whether helps ITO film to reply electrical and to increase the mechanical properties. Result showed that ITO substrate after flexing, the resistance will higher, even brock and can’t conductive. Crack Filling will reduce the resistance impedance has risen ITO. When the ITO film after the bending process, the resistance will not bend to a cer-tain bending radius has sharply increased the situation will be gradual rise. When re-peated bending, although not yet the same mechanical properties as the original PET/ITO. In 127μmPET / ITO presplit + 40nmITO its mechanical properties closest to the original ITO film.
Zheng, Jun-Jie, and 鄭俊傑. "Transparent Conductive Oxide Thin Films for Solar Cell Application." Thesis, 2011. http://ndltd.ncl.edu.tw/handle/59161629052745668661.
國立高雄海洋科技大學
微電子工程研究所
99
Zinc oxide is a wide and direct band gap of semiconductor. The excitation wavelength of light is short wavelength, so it is widely used in optical materials. Therefore, this thesis focuses on transparent conductive oxide - zinc oxide(ZnO). This thesis will try doped aluminum, nitrogen atoms in the ZnO film for analysis of materials and research the practical application. This thesis will use Sol-gel method to derive aluminum doped ZnO (AZO, ZnO: Al) and p-type aluminum co-doped ZnO (NZO, ZnO: Al: N) film. For different preparation conditions and heat treatment conditions, the film’s electrical, optical and structural properties were measured by using UV-VIS-NIR spectrophotometer, photoluminescence(PL), Raman spectroscopy, scanning electron microscopy (SEM), X-ray diffraction (XRD) and Hall’s measurement. Finally, based on the investigation results, the film’s properties were identified and discussed.
LIN, PO-CHUN, and 林柏均. "Manufacturing process and application of conductive nickel oxide fiims." Thesis, 2016. http://ndltd.ncl.edu.tw/handle/36895117639598766494.
Wang, Chin-wen, and 王志文. "Deposition of transparent conductive oxide films by spray pyrolysis." Thesis, 2012. http://ndltd.ncl.edu.tw/handle/57647545803062306579.
國立臺南大學
材料科學系碩士班
100
Transparent conductive films have been widely used in various optoelectronic devices, wherein the fluorine-doped tin oxide (FTO) films are suitable for the solar cells application because of good thermal stability and higher acid resistance. In recent years, some researchers have tried to change the FTO surface texture to improve the performance of solar cells. As for dye-sensitized solar cells, the structure of photoanode is an important parameter for enhancing their performance. In this research, the spray pyrolysis method will be used to prepare the conductive FTO film and the porous layer of aluminum-doped zinc oxide (AZO). For the FTO film, we could enhance its haze by changing the spray parameters. By changing the spray time, the FTO surface would produce some spherical particles which contribute to increasing the haze of FTO films. In infrared region the haze was improved by 7 % and a 12 % improvement was obtained in the visible region. In the spray deposition of AZO coatings, we could get porous layer by adding PVB to zinc salt solution. In addition, we could also take advantage of the rapid deposition of the spray pyrolysis with the sol-gel solution to achieve porous layers.
Hsieh, Cheng-Kang, and 謝振剛. "Characteristics of transparent and conductive aluminum zinc oxide thin film." Thesis, 2005. http://ndltd.ncl.edu.tw/handle/20899995915943894960.
Hsieh, Chi-Hsing, and 謝繼興. "Studies on Graphene Oxide-Ag and Conductive Polythiophene Nano-Composites." Thesis, 2012. http://ndltd.ncl.edu.tw/handle/a68te2.
國立臺北科技大學
有機高分子研究所
100
The aim of this study is to prepare graphene oxide-Ag /conductive poly (3-4ethylenedioxythiophene) nano-composites. We blend graphene oxide before and after the surface attractive of nano Ag and poly(3-4ethylenedioxythiophene) - polystyrene sulfonic acid that synthesized. The dispersion of graphene in composites and conductivity were tested and discussed. The polythiophene derivatives we synthesized are monomer 3-4ethylenedioxythiophene、poly(3-4ethylenedioxythiophene) -polystyrene sulfonic acid (PEDOT:PSS) polymer. There are two parts about the surface modification of graphene, the first part of the Hummers method oxidized graphene (GO) ; second part of the nano Ag ion attract mechanism by chemical reduction of graphene oxide to make nano Ag ions to restore nano Ag and graphene. We blend graphene oxide before and after the surface attractive of nano Ag and poly(3-4ethylenedioxythiophene) - polystyrene sulfonic acid that synthesized. The dispersion of graphene in composites and conductivity were tested and discussed.The products were characterized by NMR、FT-IR、TGA、UV-vis、XRD、Raman、XPS、AFM、SEM、TEM、Milliohmmeter identification of samples of characteristics.
Kao, Yu-chun, and 高鈺鈞. "Growth and Characterization of Transparent Conductive Oxide InGaSnO Thin Films." Thesis, 2014. http://ndltd.ncl.edu.tw/handle/946pan.
大同大學
光電工程研究所
102
In this work, InGaSnO (IGTO) thin films were grown by plasma-assisted molecular beam epitaxy in order to demonstrate quaternary semiconductor IGTO suitable for transparent conductive oxide (TCO) applications. First of all, In1-xGaxO (x means the cation atoms percentage of the gallium in the compound) thin films were fabricated on sapphire. Concentration of material Ga was controlled by tuning Ga cell temperature between 480 oC ~700 oC, and value of x was between 0.34 ~ 0.7, respectively. The X-ray diffraction (XRD), Transmittance, and Hall measurement are employed to characterize the physical and electrical properties. When x is lower than 0.41, IGO thin films are revealed cubic structure. However, IGO thin films are appeared amorphous between 0.41< x <0.7. With flux of Ga rising above 0.7, crystalline of monoclinic structure of IGO is exhibited by XRD results. Furthermore, high transmittance is estimated as 86% and resistivity is 3.4×10-2 ohm-cm. For TCO requirement, the results of IGO thin films are insufficient on its electrical characterization. In the second step, Sn was lead into IGO to produce high electrical efficiency quaternary semiconductor IGTO. XRD results were demonstrated amorphous structure of IGTO thin films which exhibited lowest resistivity as 4.0×10-4 ohm-cm and high transmittance 94% approximately when concentration of Sn was smaller than 70%. In further, surface roughness was calculated only 1.5 nm by atomic force microscope (AFM). Finally, reducing growth temperature was obtained the best electrical efficiency behavior, conductivity is increase 1.5 times from 600 oC to 400 oC.
Chen, Xin-En, and 陳馨恩. "Effects of Annealing Process on AZO Transparent Conductive Oxide Film." Thesis, 2005. http://ndltd.ncl.edu.tw/handle/41785583565286333088.
國立屏東科技大學
機械工程系
93
The purpose of this study is to deposite AZO transparent conductive film on corning glass substrate using radio frequency magnetron sputtering, then treats AZO thin film in laser annealing. Meanwhile, the effects of process parameters on resistivity are investigated. The construct of this study can be divided into three parts: Firstly, one-factor-at-a-time method is used to arrange the sputtering parameters for experimental work. The selected sputtering parameters include Al RF power, DC bias and working gas. Sputtering experiments are performed using the RF magnetron sputtering system, while the measurements of resistivity are conducted and compared. Consequently, the optimum setting of sputtering parameters for resistivity can be found. Secondly, an orthogonal array of Taguchi method is used to arrange the laser annealing parameters for experimental work. The selected laser annealing parameters include peak power, focused position, working speed and number of pulse. Annealing process is carried out using a pulsed Nd:YAG laser machine. An improvement of decreasing resistivity has been found which corresponding to a setting of optimum laser annealing parameters. Thirdly, the measurements of deposited rate, microstructure and Optical transmission are performed, then the relationship between their characteristics with the resistivity of AZO film is developed. In this study, the results indicate that the minimum resistivity for sputtering process is 6.087×10-3 Ω-cm. It can be reduced to a less value of 4.119×10-3 Ω-cm after conducting the optimal parameters for annealing treatment that improving 32.3% in resistivity. In addition, it shows that the Al RF power and peak power are the most significant sputtering parameters affecting resistivity of AZO film. If the Al RF power increases, then deposited rate increases. Consequently, the thin film attains more detailed grown surface, smaller crystalline size and increasing diffraction intensity that makes resistivity reduce. However, an increase in DC bias and the introduce of hydrogen causes a decrease in deposited rate that leads an over detailed grown surface and a decrease in diffraction intensity. As a result, the resistivity is unable be improved anymore. When the laser annealing process performed, it gives peak power increasing, makes better crystallizing of thin film such that lower resistivity can be obtained. On the other hand, the optical transmission reaches above 85% in spite of the change in settings of parameters for AZO thin film. It indicates that the composition of thin film makes no effect on optical characteristic.
Peng, Yen-chun, and 彭彥鈞. "Zinc Oxide as Transparent Conductive Material from First Principles Analysis." Thesis, 2012. http://ndltd.ncl.edu.tw/handle/32145363935128155397.
明志科技大學
材料工程研究所
100
In this work, the properties of electrical and optical in ZnO and GZO (Ga-doped ZnO)will be studied from first-principle. In GGA+Ud+Up method, The calculated band gap and lattice parameter of pure ZnO are 3.37 eV and 3.258 Å , which are good with the experiments. The calculated band structures of substitutional and interstitial Ga-doped ZnO show that the interstitial Ga atom will be generated deep level in band gap, which will significantly decrease the transmittance in the visible light region. Comparing with the pure ZnO, transmittance decrease from 89.2% to 59.0(Gai(oct) ) or 66.1%(Gai(tet) ). When the doping concentration from 1.4 to 25.0 at%, the optical band gap are increased with impurities states of CBM. However, the occupied states is displayed delocalization at 12.5 at% doping concentration. In contrast, the concentration of 25.0 at% will be become localized state, which show that the free carries mobility are decrease. The optical propurties show that the average transmittance are maintained more than 90% when doping concentration from 1.4 to 6.2 at%. However, the high doping concentration will strongly reduce transmittance because of large carries absorption.The research of GZO with nature defects found that the VZn and Oi easy to form at O-rich condition. And the contribution of acceptor levels which kill Ga donors. Although all the band gap narrowing(3.0 and 2.88 eV) and maintained high ransmittance, but the larger energy barrier cannot excited free electrons form valence band to conduction band. In addition, the analysis of PDOS show that the states of localized O-2p will be decreased free carries mobility.
Chang, Chun-Yu, and 張淳瑜. "The Properties of Transparent Conductive Oxide ITO Films Flexible Substrates." Thesis, 2013. http://ndltd.ncl.edu.tw/handle/77824003032172702583.
淡江大學
機械與機電工程學系碩士班
101
Precipitation method In this study were prepared successfully doped La, Mo, K –doped ITO powders, its doping concentration of 4at%, 6at%, 8at%, to explore its powder color, electrical and optical properties. And solvothermal increase the ITO powder doped with oxygen ion vacancies by XRD diffraction doping elements that do not change the characteristic peak ITO, and then analyzed by the full spectrum, that there are La,K-doped can improve the transmittance of ITO, so that in the visible region to achieve good penetrate, penetration Mo-doped will make the poor; by the Hall voltage measurements of its electrical properties, can know the doping element does not improve the conductivity of ITO, the amount of dopant ions will increase the carrier concentration, but will decrease the mobility.
Kao, Ruei-Hung, and 高瑞鴻. "Growth and Characterization of Transparent Conductive Oxide ZnSnO Thin Films." Thesis, 2013. http://ndltd.ncl.edu.tw/handle/31834541829439541488.
大同大學
光電工程研究所
101
ZnSnO (ZTO) thin films were grown on sapphire by using plasma-assisted molecular beam epitaxy. The tin concentration was controlled by varying tin cell temperature. When tin content reaches to 5 at.%, the structure of ZnSnO thin films is transferred from crystalline to amorphous, which is determined by X-ray diffraction (XRD). The lattice constant in c-axis of ZnO:Sn films linearly increases with TSn increased, which implied the valence electron number of tin is +2. Based on absorption spectra result, the principal structure of ZTO is respectively on ZnO in crystalline region (denoted as c-ZTO) and SnO2 in amorphous region (a-ZTO). There is the lowest resistivity (7.09 × 10-4 ohm-cm) and the highest mobility (18.9 cm2/V-s) in a-ZTO as tin content reached 32.3%. In addition, the mobility of a-ZTO is enhanced by decreasing growth temperature. The SnO2-based ZTO (32.3% Sn content) grown on 600℃ substrate temperature has the highest mobility as 23 cm2/V-s.
Jie, Chen Zheng, and 陳政傑. "A study of indium tin-oxide transparent conductive oxide films by using electron-beam evaporation." Thesis, 2012. http://ndltd.ncl.edu.tw/handle/60540112983326686828.
明新科技大學
化學工程與材料科技系碩士班
101
Transparent conductive electrodes with high transmittance and low resistance to optoelectronic device have gradually been widely used,such as touch panel、solar call、liquid crystal displays、with the rapid expansion of these product markets、the growth transparent conductive electrode rapidly increase in demand.Wherein the Indium tin oxide (Indium Tin Oxide; ITO) plays the important role of the conductive electrodes in a plane display. ITO film having a low resistance, and have a high transmittance in the visible range, the method of the preparation of indium tin oxide, mainly by sputtering method and electron beam deposition method, wherein the electron beam deposition method does not cause the surface of the elementinjury, and therefore subject to widespread attention. In this study, using an electron beam deposition method a growing Indium tin oxide thin film on the sodaline glass. Study their structural, electrical and optical properties of the thin film micro different deposition thickness, substrate temperature, spot oxygen flow and subsequent heat process.Using X-ray diffraction analyzer crystalline; Scanning electron microscope to observe the surface morphology of the sample; UV / VIS / NIR spectrometer transmittance ; sheet resistance of the four-point probe studies; Hall effectThe measurement to obtain the carrier concentration and the mobility of the thin film. The interpretation of the results, indium tin oxide film at a substrate temperature of 200 oC growth ITO film 100 nm thin film growth leads to 8 sccm O2 annealing at 300 ℃ in the 550nm transmittance of 98%, you can get a better quality factor of 0.055Ω-1, the experimental results using an electron beam vapor deposition by appropriate annealing the transparent conductive film of low resistance and high transmittance can be obtained.
Cheng, Hao-Wen, and 鄭皓文. "Aluminum Doped Zinc Oxide Transparent Conductive Oxide Thin Film Deposited by Arc Ion Plating System." Thesis, 2017. http://ndltd.ncl.edu.tw/handle/kmzc4r.
國立交通大學
平面顯示技術碩士學位學程
105
The project aims to analysis the properties of Transparent Conducting Oxide thin film of Al doped ZnO (AZO) deposited on glass、silicon wafer and PET substrates though controlling various parameters including alloy target with 2% and 3% Al-Zn and oxygen flow from 10-150 sccm in a 100℃ chamber of Arc ion plating system.The film properties analysis include optical character, electrical and structure properties by UV-Visible, Hall measurement, X-ray powder diffraction (XRD), Scanning Electron Microscope (SEM), Alpha-step, and Four Point Probe systems. Furthermore, the optical characters and electrical properties will be studied on PET substrate by different radius of curvature of flexural loads. From the testing results, the average transmittance under visible range (about 400-700nm) of all the AZO films are higher than 80%. The best result of average transmittance could reached 89%. The best resistivity was 3.769×10-4 Ω-cm. The homogeneity of electrical resistance on 10×10 cm2 PET substrate was 9.5%.The films deposited under 100℃ chamber will carry the properties of (002) C-axis orientation by XRD analysis.
Lu, Chun-Yu, and 盧俊宇. "The Application of Indium Tin Oxide Conductive Layer for AlGaInP LEDs." Thesis, 2009. http://ndltd.ncl.edu.tw/handle/82555931496472810357.
大葉大學
電機工程學系
97
Indium-Tin Oxide, was introduced to enhance the current spreading and been a transparent electrode. ITO is widely used on electro optical devices due to its high conductance (ρ=2.5×10-4Ω‧cm) and superior transparency (>90%). On a conventional AlGaInP LED, it is hard to form a good ohmic contact between ITO and GaP window layer. In order to resolve this issue, we formed a Ni/ITO layer on GaP to obtain a good ohmic contact in this study. In this work, a Ni(6 nm)/ITO(230 nm) layer was deposited onto the AlGaInP LED by an electron beam evaporation system, then we measured the sheet resistance and transmittance.The transmittance of Ni/ITO layer can reach 91% at 630nm in this experiment. The Ni/ITO layer, annealed in a furnace at 450℃ under air ambient for 15 min, is found to achieve the lowest sheet resistance. We regard the Ni/ITO layer as a contact layer of window layer of AlGaInP LEDs for application, the drive voltage, drop of about 0.04V and 0.13V at an operation current of 20mA, as compared to the LED with GaP and GaP/ITO structure. The luminous intensity of GaP/Ni/ITO structure LED is 1.23 and 1.62 times higher than that of GaP and GaP/ITO structure LED at an operation current of 100mA. Key Words: ITO, AlGaInP, LEDs.
張旻瑋. "With different substrate deposition of zinc oxide transparent conductive film studies." Thesis, 2013. http://ndltd.ncl.edu.tw/handle/22329978781985140281.
建國科技大學
電機工程系暨研究所
101
In this study, the use of RF magnetron sputtering at four different substrates (Glass, a-SiC/glass, a-Si/glass, Si) deposition of aluminum zinc oxide (AZO) transparent conductive film, and explore different RF power, heat effects. Using the spectrophotometer (UV / VIS) analysis of the optical properties of thin films, X-ray diffraction (XRD) analysis of crystal structure, electrical properties, the use of the Hall effect device (Hall Effect) measuring resistivity, carrier concentration and electron mobility . The a-Si substrate, a working pressure of the sputtering power of 100W in an Ar gas flow rate 15sccm 5mtorr the carrier concentration 7.07x1020cm-3, mobility 1.455cm2/Vs, resistivity of 6.07x10-3Ω-cm, temperature of 400 ℃ annealing time is 10min the carrier concentration 8.6x1020cm-3, mobility 9.45cm2/Vs, resistivity 6.71x10-4Ω-cm, in the visible range, the film transmittance of the glass substrate than 80%, a-Si substrate, it is because the a-Si it will accommodate a light absorption film penetration is not high. Keyword:AZO、RF magnetron sputter、different substrates
Liao, Wei Chun, and 廖韋竣. "Preparation and characteristics of Al-doped zinc oxide transparent conductive films." Thesis, 2013. http://ndltd.ncl.edu.tw/handle/14976210732554546355.
明新科技大學
精密機電工程研究所
101
ZnO is the n-type II-VI semiconduction with a wurtzite structure of hexagonal crystal and lattice constant of a =3.25 Å, c=5.207 Å. This semiconductor material has a wide-bandgap (3.37 eV) and high exction binding energy (60 meV). One-dimensional zinc oxide nanorods for the electrode material of dye-sensitized solar cells (DSSCs), have caused move discussion in recent years, due to nanorods of zinc oxide and titanium dioxide, and zinc oxide nano-particles have higher mobility. In this thesis, the radio frequency (RF) magnetron sputtering sytem is used to deposit conducting AZO thin films on the ITO glass substrate. The Al-doped zinc oxide films were processed at various annealing temperatures of (150℃, 250℃, 350℃,450℃) for (30 min and 60 min) to investigate the optimal processing condition oxide seed layer deposited on substrate and then surface modification for seed layer by H2 plasma, resulting in the enhanced surface roughness and hydrophilic of aluminum-doped oxide seed layer. The physical the electrical, microstructure characteristics of Al-doped ZnO films were measured by using the X-ray diffraction for crystal structure analysis, UV-visible spectrometer (UV-Vis) for optical properties, four-point measurement for electrical characterization, and emission scanning electron microscope (SEM) for surface morphology analysis. To investigate the optimization of process parameters of Al-doped zinc oxide thin films, by the mentioned above measurment. Experimental results show that the resistivity of thin film resistor form 1.26x10-2 Ω.cm reduced to 1.08x10-4Ω.cm, and the optical transmittance of 85.0%. From the annealing treatment at temperatures of 150℃, 250℃, 350℃,450℃ for 30 minutes, it can be found at the annealing temperature of 450℃ for 30 minnutes, the optimum resistivity of 1.08x10-4 Ω.cm and optical transmittance of 85.0% were achieced. AZO/ITO film on substrate processed at annealing temperature of 450℃, and H2 plasma treatment, the contact angle of the substrate surface decreased, and exhibited surface hydrophilic and -OH functional groups, which is in favor of applications of solar energy, a transparent conductive film, light emitting diodes, LCD.
Chen, Wen-Hua, and 陳文華. "Growth of Zinc Oxide Transparent Conductive Film by RF Magnetron Sputtering." Thesis, 2005. http://ndltd.ncl.edu.tw/handle/45633610755800844278.
國立成功大學
化學工程學系碩博士班
93
Radio-frequency magnetron sputtering method has been employed to deposit Aluminum-doped zinc oxide. The mechanism of doping by incorporating Aluminum in zinc oxide was studied. Besides, attempts have been made to deposit at right condition to get zinc oxide film with high conductivity and high transparency in visible light range. Aluminum incorporation was demonstrated to be able to enhance the conductivity of zinc oxide significantly. Various properties of Aluminum doped zinc oxide were studied by varying the deposition conditions. Aluminum doped zinc oxide films on corning glass have been prepared by rf reactive magnetron sputtering from targets with different dopant concentrations, oxygen partial pressure, working pressure, RF power and substrate bias. The optical, electric, surface morphology and structure properties of the sputtered ZnO:Al thin films have been investigated by spectroscopy (UV-Vis), X-ray diffraction , SEM , ESCA and Hall effect measurement. When the Aluminum composition in the film is too low, the carrier concentration in zinc oxide film becomes low. When the Aluminum composition is too high, the donors in the zinc oxide film will induce electron scattering by the ionized impurities. Therefore, an optimum hydrogen composition exists to minimize the resistivity of the doped zinc oxide film. Radio-frequency power affects the degree of ionization of inlet gas in the plasma, the sputtering yield and the crystallization process, 100W is found to be the optimum power to obtain a high conductivity zinc oxide film.
Chen, Bo-Quan, and 陳柏全. "Study of MAPbI3 perovskite solar cells without transparent conductive oxide film." Thesis, 2018. http://ndltd.ncl.edu.tw/handle/hqa6j4.
國立臺北科技大學
光電工程系
106
In this study, perovskite solar cells were fabricated using highly conductive PEDOT:PSS as conductive material instead of traditional indium tin oxide (ITO). First, a conductive layer, a hole transport layer, and an active layer film are prepared by spin-coating, and then a C60 and silver electrode are formed by a thermal evaporation method. The structure is as follows: Glass/highly conductive PEDOT:PSS /PEDOT:PSS/CH3NH3PbI3/ C60/Ag. In this study, DMSO was used to stabilize the film stability of conductive film, and a flat MAPbI3 crystal film was formed on the PEDOT:PSS film by One-Step spin coating to realize the production of an organic perovskite solar cell. Field emission scanning electron microscope (FESEM), X-ray diffraction (XRD), and UV-VIS transmission spectroscopy were used to observe the optical properties such as surface morphology, crystallite size, crystal phase, and light transmission. We changed the thickness of the transparent conductive layer and the hole transport layer, discussed the differences of solar cells under different conditions, and measured the optical properties under different conditions to be inseparable from the perovskite solar cells. The J-V curve, open circuit voltage (VOC), short circuit current density (JSC), fill factor (F.F), and power conversion efficiency (PCE) of the solar cells.
LAI, CHI-HUAI, and 賴祈淮. "Preparation of silver/thiol reduced graphene oxide composites for conductive materials." Thesis, 2019. http://ndltd.ncl.edu.tw/handle/g8rs57.
國立臺北科技大學
資源工程研究所
107
In recent years, due to the rapid development of the electronics industry, the characteristics of a single material can not meet the progress of the times. In this study, the surface properties and electrical properties of reduced graphene oxide were mainly used to adsorb silver ions after modification with MPTMS, thereby improving the conductivity of reduced graphene oxide. The study is divided into four parts: The first part is the discussion on the modification of graphene oxide. The solvothermal method is used to prepare thiol-graphene oxide. The mechanism of MPTMS on the degree of surface modification and surface reaction of graphene oxide is discussed. The second part is to investigate the effect of thiol-graphene oxide on the adsorption of Ag(I) in silver nitrate at different pH, time, concentration and temperature, and discuss its adsorption mode. The third part is to use L-ascorbic acid as a reducing agent to investigate the change between surface thiol-graphene oxide and silver metal particles before and after silver/thiol-graphene oxide reduction. The fourth part is to discuss the conductivity analysis of silver/thiol-reduced graphene oxide and silver/reduced graphene oxide. The experimental results show that L-ascorbic acid can effectively reduce graphene oxide without destroying the mercaptan structure in MPTMS. In this study, the optimal mass of MPTMS was 5%, and after the adsorption, the surface silver ions were reduced to silver metal particles. After the reduction, the amount of extra silver added could reach 4469 S/cm, so the silver/thiol reduction oxidation was used in this study. Graphene has the potential of conductive materials.
Peng, Yeh-Chun, and 彭彥鈞. "Electrochemical behavior of transparent conductive Al-doped zinc oxide(AZO) and tin-doped indium oxide(ITO) films." Thesis, 2007. http://ndltd.ncl.edu.tw/handle/40131951394867959955.
國立中央大學
機械工程研究所
95
The electrochemical behavior of Al-doped zinc oxide(AZO)、Tin-doped indium oxide(ITO)、Sc-doped AZO and AZO annealed at 300℃ for 1hr were immersed in 3.5%NaCl and in different buffer solutions varying with pH were investigated in this work. Electrochemical techniques such as measurement of open circuit potential, linear polarization, cyclic voltammograms, electrochemical impedance spectroscopy were employed. Reaction products on the surface of oxides under different potentials were examined for those produced on a variety of potentials in different duration. The corrosion resistance of difference oxide films to 3.5%NaCl solution decreases in the order: annealed 300℃ AZO>ITO>Sc-doped AZO>AZO. Sc-doped tends to in increase the corrosion resistance of the AZO thin films. The corrosion resistance to 3.5%NaCl for Sc-doped AZO decreases with decreasing the concentration of Sc-doped:0.242wt%>0.134wt%>0.006wt%>0wt%. The electrochemical behavior of AZO and the AZO anneal at 300℃ for 1h in various buffer solutions was studied using cyclic voltammetry under a scan rate of 50mV/s. The reduction current and characteristic oxidation current are lower in the annealed AZO then the usual AZO, this fact reflects that annealed AZO is more resistance to corrosion in buffer solutions.
Huang, Chia-Cheng, and 黃家城. "Study of properties of transparent conductive oxide thin films and related heterojunction." Thesis, 2013. http://ndltd.ncl.edu.tw/handle/46218736657405112748.
國立中興大學
電機工程學系所
101
In this study, The p-type nickel oxide (NiO), n-type gallium-doped zinc oxide (GZO) and titanium-doped zinc oxide (TZO) thin films were deposited on glass by RF magnetron sputtering. We investigated the effects of deposition parameters on structure, optics and electrical of properties of p-type NiO thin, n-type GZO and TZO thin films. Finally, transparent p-n heterojunction diodes were fabricated using the developed NiO, GZO and TZO films to study the effects of sputter power on their structure, optics and electrical properties. We investigated the effects of deposition parameters such as sputtering power, deposition time and gas ratio on properties of NiO thin films. Increasing oxygen gas ratio(0% to 100%), the transmittance of the film will result in significantly decreased, the resistivity will be significantly reduced. The oxygen gas ratio 100% of NiO thin film has low a resistivity of 5.7×10-2 Ω-cm. The resistivity of the NiO thin films decreased with increasing deposition power, but the transmittance of the NiO thin films decreased. Increasing sputter power at 75 to 150 W, the prepared films achieved the resistivity of 1.4×10-1 Ω-cm and average transmittance of 62% in the wavelength range of 400-700 nm at the RF power of 100 W. Radio frequency magnetron sputtering was used to deposit GZO thin films (deposited by changing the deposition power from 75W to 150W) on glass substrates to form p(NiO)-n(GZO) heterojunction diodes with high transmittance. XRD analysis showed that only the (111) diffraction peak of NiO and the (002) and (004) diffraction peaks of ZnO (GZO) were observable in the NiO/GZO heterojunction devices, and the GZO thin films showed a good c-axis orientation perpendicular to the glass substrates. The resistivity of the GZO thin films decreased and then increased with increasing deposition power. All the GZO thin films had average optical transmittance 81% in the wavelength range of 400-700 nm. The variations in the optical band gap (Eg value) of the GZO thin films were revealing that the measured Eg value decreased with increasing deposition power. The prepared films had excellent electrical properties (ρ=4.1×10-3Ω-cm) and average optical transmittance 84% in the wavelength range of 400-700 nm for theGZO thin films deposited with the RF power of 125W. In the forward bias condition, the turn-on voltages of the NiO/GZO heterojunction diodes were about 1.85 V, 1.37 V, 0.97 V, and 1.25 V as the deposition powers of the GZO thin films were 75 W, 100 W, 125 W, and 150 W, respectively. The result show that the NiO/GZO heterojunction diode was dominated by the space-charge-limited-current (SCLC) theory. All the the NiO/GZO heterojunction diodes had average optical transmittance 51~65 % in the wavelength range of 400-700 nm. The variations in the optical band gap (Eg value) of the the NiO/GZO heterojunction diodes were revealing that the measured Eg value decreased with increasing deposition power. Radio frequency magnetron sputtering was used to deposit TZO thin films (deposited by changing the deposition power from 75W to 150W) on glass substrates to form p(NiO)-n(TZO) heterojunction diodes with high transmittance. XRD analysis showed that only the (111) diffraction peak of NiO and the (002) and (004) diffraction peaks of ZnO (TZO) were observable in the NiO/TZO heterojunction devices, and the TZO thin films showed a good c-axis orientation perpendicular to the glass substrates. The resistivity of the TZO thin films decreased with increasing deposition power. All the TZO thin films had average optical transmittance 82% in the wavelength range of 400-700 nm. The variations in the optical band gap (Eg value) of the TZO thin films were revealing that the measured Eg value decreased with increasing deposition power. The prepared films had excellent electrical properties (ρ=2.2×10-3Ω-cm) and average optical transmittance 82% in the wavelength range of 400-700 nm for the TZO thin films deposited with the RF power of 150W. In the forward bias condition, the turn-on voltages of the NiO/TZO heterojunction diodes were about 2.57 V, 1.83 V, and 2.05 V as the deposition powers of the TZO thin films were 100 W, 125 W, and 150 W, respectively. The result show that the NiO/TZO heterojunction diode was dominated by the space-charge-limited-current (SCLC) theory. All the the NiO/TZO heterojunction diodes had average optical transmittance 63~68 % in the wavelength range of 400-700 nm. The variations in the optical band gap (Eg value) of the the NiO/GZO heterojunction diodes were revealing that the measured Eg value decreased with increasing deposition power.