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Готові списки джерел за темами / Compositionally graded materials / Статті в журналах

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Статті в журналах з теми "Compositionally graded materials"

Автор: Grafiati

Опубліковано: 14 вересня 2024

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1

Coco, Lorenzo, Florent Lefevre-Schlick, Olivier Bouaziz, Xiang Wang, J. K. Solberg, and David Embury. "The mechanical response of compositionally graded materials." Materials Science and Engineering: A 483-484 (June 2008): 266–69. http://dx.doi.org/10.1016/j.msea.2006.12.164.

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2

Torrecillas, R. "Compositionally graded zirconia-molybdenum materials without residual stress." Metal Powder Report 57, no. 6 (June 2002): 54. http://dx.doi.org/10.1016/s0026-0657(02)80261-2.

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3

Zhong, S., S. P. Alpay, Z. G. Ban, and J. V. Mantese. "Effective pyroelectric response of compositionally graded ferroelectric materials." Applied Physics Letters 86, no. 9 (February 28, 2005): 092903. http://dx.doi.org/10.1063/1.1866505.

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4

ChÃ©hab, BÃ©chir, Hatem Zurob, David Embury, Olivier Bouaziz, and Yves Brechet. "Compositionally Graded Steels: A Strategy for Materials Development." Advanced Engineering Materials 11, no. 12 (December 2009): 992–99. http://dx.doi.org/10.1002/adem.200900180.

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5

Popa, Monica, José-Maria Calderón Moreno, Pavol Hvizdoš, Raúl Bermejo, and Guy Anné. "Residual Stress Profile Determined by Piezo-Spectroscopy in Alumina/Alumina-Zirconia Layers Separated by a Compositionally Graded Intermediate Layer." Key Engineering Materials 290 (July 2005): 328–31. http://dx.doi.org/10.4028/www.scientific.net/kem.290.328.

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Анотація:

In order to understand the mechanical behavior of layered composites with compositional gradient, it is necessary to determine their state of residual stresses. Compositionally graded materials can offer the advantage of eliminating abrupt changes in composition between layers having different thermal expansion coefficients. The existence of a compositional gradient may reduce discontinuities in thermal residual stresses, something beneficial from the point of view of the mechanical properties. We present here a study of the state of the residual stresses in a layered material made of thicker (several mm) homogeneous layers of alumina and alumina-20%zirconia separated by a thinner (less than 300 µm) intermediate graded alumina-zirconia layer, obtained by controlled deposition of powders from a solution using an electrophoretic deposition method. The thermal residual stresses generated during cooling after sintering were measured in the homogeneous layers at each side, and at steps of about 30 µm in the graded layer along the direction of the compositional gradient, by using fluorescence ruby luminescence piezo-spectroscopy. Results show that the hydrostatic stresses on alumina grains vary continuously, indicating the absence of discontinuities in thermal residual stresses along the compositionally graded layer and at the interfaces of the homogeneous layers.

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6

Wu, Jiagang, John Wang, Dingquan Xiao, and Jianguo Zhu. "Compositionally graded bismuth ferrite thin films." Journal of Alloys and Compounds 509, no. 35 (September 2011): L319—L323. http://dx.doi.org/10.1016/j.jallcom.2011.05.076.

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7

Suresh, S., A. E. Giannakopoulos, and J. Alcalá. "Spherical indentation of compositionally graded materials: Theory and experiments." Acta Materialia 45, no. 4 (April 1997): 1307–21. http://dx.doi.org/10.1016/s1359-6454(96)00291-1.

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8

Peka, H. P., D. A. Pulemyotov, and M. P. Verkhovodov. "Compositionally graded semiconductors with intervalley crossover." Semiconductor Science and Technology 8, no. 8 (August 1, 1993): 1517–22. http://dx.doi.org/10.1088/0268-1242/8/8/006.

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9

Kim, Yeon-Wook, Tae-Hyun Nam, and Seong-Min Lee. "Martensitic Transformation Behaviors of Compositionally Graded Ti–Ni-Based Shape Memory Alloys." Science of Advanced Materials 12, no. 10 (October 1, 2020): 1586–90. http://dx.doi.org/10.1166/sam.2020.3802.

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In this study, we demonstrate a simple and effective way to fabricate functionally graded TiNi-based alloys with linear variations of composition and martensitic transformation behavior. Ti50Ni50 and Ti50Ni35Cu15 alloy strips were fabricated through a melt overflow process. The compositionally graded diffusion couple was fabricated by annealing two strips of different alloy compositions after being placed face to face in a pressing graphite mold. The mechanical properties and martensitic transformation behaviour of the diffusion couple were analysed by tensile test and DSC. The compositionally graded specimens exhibited unique superelastic property and wide martensitic formation temperature range. Such mechanical and thermal behaviors of the compositionally graded TiNi-based alloy offer good function and controllability for actuators.

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10

Klic, A., and M. Marvan. "Pseudo-spin model of compositionally graded ferroelectrics." Phase Transitions 79, no. 6-7 (June 2006): 493–503. http://dx.doi.org/10.1080/01411590600892377.

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11

Shut, V. N., S. R. Syrtsov, and V. L. Trublovsky. "Ferroelectric properties of compositionally graded BST ceramics." Phase Transitions 83, no. 5 (May 2010): 368–77. http://dx.doi.org/10.1080/01411594.2010.484900.

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12

Ban, Z. G., S. P. Alpay, and J. V. Mantese. "Hysteresis Offset and Dielectric Response of Compositionally Graded Ferroelectric Materials." Integrated Ferroelectrics 58, no. 1 (August 2003): 1281–91. http://dx.doi.org/10.1080/10584580390259470.

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13

Rousseau, C. E., and H. V. Tippur. "Compositionally graded materials with cracks normal to the elastic gradient." Acta Materialia 48, no. 16 (October 2000): 4021–33. http://dx.doi.org/10.1016/s1359-6454(00)00202-0.

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14

Gam, J. S., K. S. Han, S. S. Park, and H. C. Park. "Joining of TiB2-AL2O3Using Compositionally Graded Interlayers." Materials and Manufacturing Processes 14, no. 4 (January 1999): 537–46. http://dx.doi.org/10.1080/10426919908914848.

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15

Zeng, Minxiang, Yipu Du, Qiang Jiang, Nicholas Kempf, Chen Wei, Miles V. Bimrose, A. N. M. Tanvir, et al. "High-throughput printing of combinatorial materials from aerosols." Nature 617, no. 7960 (May 10, 2023): 292–98. http://dx.doi.org/10.1038/s41586-023-05898-9.

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AbstractThe development of new materials and their compositional and microstructural optimization are essential in regard to next-generation technologies such as clean energy and environmental sustainability. However, materials discovery and optimization have been a frustratingly slow process. The Edisonian trial-and-error process is time consuming and resource inefficient, particularly when contrasted with vast materials design spaces1. Whereas traditional combinatorial deposition methods can generate material libraries2,3, these suffer from limited material options and inability to leverage major breakthroughs in nanomaterial synthesis. Here we report a high-throughput combinatorial printing method capable of fabricating materials with compositional gradients at microscale spatial resolution. In situ mixing and printing in the aerosol phase allows instantaneous tuning of the mixing ratio of a broad range of materials on the fly, which is an important feature unobtainable in conventional multimaterials printing using feedstocks in liquid–liquid or solid–solid phases4–6. We demonstrate a variety of high-throughput printing strategies and applications in combinatorial doping, functional grading and chemical reaction, enabling materials exploration of doped chalcogenides and compositionally graded materials with gradient properties. The ability to combine the top-down design freedom of additive manufacturing with bottom-up control over local material compositions promises the development of compositionally complex materials inaccessible via conventional manufacturing approaches.

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16

Lee, Kenneth E., and Eugene A. Fitzgerald. "High-quality metamorphic compositionally graded InGaAs buffers." Journal of Crystal Growth 312, no. 2 (January 2010): 250–57. http://dx.doi.org/10.1016/j.jcrysgro.2009.10.041.

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17

Gao, Lei. "Optical nonlinearity enhancement of compositionally graded films." European Physical Journal B 44, no. 4 (April 2005): 481–86. http://dx.doi.org/10.1140/epjb/e2005-00147-x.

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18

Zhang, Tong-Yi. "A dislocation in a compositionally graded epilayer." Physica Status Solidi (a) 148, no. 1 (March 16, 1995): 175–89. http://dx.doi.org/10.1002/pssa.2211480115.

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19

Nakano, Junichi, Kimio Fujii, and Reiji Yamada. "Mechanical Properties of Oxidation-Resistant SiC/C Compositionally Graded Graphite Materials." Journal of the American Ceramic Society 80, no. 11 (November 1997): 2897–902. http://dx.doi.org/10.1111/j.1151-2916.1997.tb03209.x.

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20

Roumina, R., J. D. Embury, O. Bouaziz, and H. S. Zurob. "Mechanical behavior of a compositionally graded 300M steel." Materials Science and Engineering: A 578 (August 2013): 140–49. http://dx.doi.org/10.1016/j.msea.2013.04.006.

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21

Kulkarni, Tushar, H. Z. Wang, S. N. Basu, and V. K. Sarin. "Compositionally graded mullite-based chemical vapor deposited coatings." Journal of Materials Research 24, no. 2 (February 2009): 470–74. http://dx.doi.org/10.1557/jmr.2009.0062.

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Dense, crystalline mullite (3Al2O3ċ2SiO2) coatings have been deposited by chemical vapor deposition on Si-based substrates using the AlCl3–SiCl4–CO2–H2 system. A graded coating composition has been achieved in the coatings, with the Al/Si ratio being stoichiometric (∼3) at the coating/substrate interface, and increasing monotonically toward the outer coating surface. The highest reported Al-rich mullite has been deposited in the process. At high Al/Si ratios, the mullite structure breaks down and an aluminosilicate phase similar to the metastable δ* Al2O3 is nucleated. Experimental evidence is presented in this study that this phase has some Si-incorporation in it and has been called δ*(Si)Al2O3. Like the other known aluminosilicates, δ*(Si)Al2O3 converts to mullite on heating at elevated temperatures.

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22

Vallone, Marco, Michele Goano, Francesco Bertazzi, Giovanni Ghione, Stefan Hanna, Detlef Eich, and Heinrich Figgemeier. "FDTD simulation of compositionally graded HgCdTe photodetectors." Infrared Physics & Technology 97 (March 2019): 203–9. http://dx.doi.org/10.1016/j.infrared.2018.12.041.

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23

Okatan, M. B., A. L. Roytburd, V. Nagarajan, and S. P. Alpay. "Electrical domain morphologies in compositionally graded ferroelectric films." Journal of Physics: Condensed Matter 24, no. 2 (December 15, 2011): 024215. http://dx.doi.org/10.1088/0953-8984/24/2/024215.

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24

Pal, R., A. Malik, V. Srivastav, B. L. Sharma, V. Dhar, B. Sreedhar, and H. P. Vyas. "Compositionally graded interface for passivation of HgCdTe photodiodes." Journal of Electronic Materials 35, no. 10 (October 2006): 1793–800. http://dx.doi.org/10.1007/s11664-006-0159-0.

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25

Cai, Minglei, Tedi Kujofsa, Xinkang Chen, Md Tanvirul Islam, and John E. Ayers. "Interaction Length for Dislocations in Compositionally-Graded Heterostructures." International Journal of High Speed Electronics and Systems 27, no. 03n04 (September 2018): 1840022. http://dx.doi.org/10.1142/s0129156418400220.

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Several simple models have been developed for the threading dislocation behavior in heteroepitaxial semiconductor materials. Tachikawa and Yamaguchi [Appl. Phys. Lett., 56, 484 (1990)] and Romanov et al. [Appl. Phys. Lett., 69, 3342 (1996)] described models for the annihilation and coalescence of threading dislocations in uniform-composition layers, and Kujofsa et al. [J. Electron. Mater., 41, 2993 (2013)] extended the annihilation and coalescence model to compositionally-graded and multilayered structures by including the misfit dislocation-threading dislocation interactions. However, an important limitation of these previous models is that they involve empirical parameters. The goal of this work is to develop a predictive model for annihilation and coalescence of threading dislocations which is based on the dislocation interaction length Lint. In the first case if only in-plane glide is considered the interaction length is equal to the length of misfit dislocation segments while in the second case glide and climb are considered and the interaction length is a function of the distance from the interface, the length of misfit dislocations, and the density of the misfit dislocations. In either case the interaction length may be calculated using a model for dislocation flow. Knowledge of the dislocation interaction length allows predictive calculations of the threading dislocation densities in metamorphic device structures and is of great practical importance. Here we demonstrate the latter model based on glide and climb. Future work should compare the two models to determine which is more relevant to typical device heterostructures.

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26

Weiss, C. V., M. B. Okatan, S. P. Alpay, M. W. Cole, E. Ngo, and R. C. Toonen. "Compositionally graded ferroelectric multilayers for frequency agile tunable devices." Journal of Materials Science 44, no. 19 (October 2009): 5364–74. http://dx.doi.org/10.1007/s10853-009-3514-8.

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27

Wang, C. L., X. S. Wang, Y. Xin, Z. Wang, X. H. Xu, W. L. Zhong, and P. L. Zhang. "Phase transition properties of compositionally graded ferroelectric structure." Ferroelectrics 252, no. 1 (February 2001): 89–96. http://dx.doi.org/10.1080/00150190108016244.

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28

Shut, V. N., S. R. Syrtsov, V. L. Trublovsky, A. D. Poleyko, S. V. Kostomarov, and L. P. Mastyko. "Compositionally Graded BST Ceramics Prepared by Tape Casting." Ferroelectrics 386, no. 1 (August 12, 2009): 125–32. http://dx.doi.org/10.1080/00150190902961876.

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29

Chapa-cabrera, J., and I. E. Reimanis. "Crack deflection in compositionally graded Cu-W composites." Philosophical Magazine A 82, no. 17-18 (November 2002): 3393–403. http://dx.doi.org/10.1080/01418610208240450.

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30

Chapa-Cabrera, J., and I. E. Reimanis. "Crack deflection in compositionally graded Cu–W composites." Philosophical Magazine A 82, no. 17 (November 20, 2002): 3393–403. http://dx.doi.org/10.1080/0141861021000017819.

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31

Marvan, M., and J. Fousek. "Pyroelectricity and thermodynamic theory of compositionally graded ferroelectric films." Phase Transitions 79, no. 1-2 (January 2006): 153–62. http://dx.doi.org/10.1080/01411590600555834.

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32

Cho, Kyung Mok, Il Dong Choi, and Ik Min Park. "Thermal Properties and Fracture Behavior of Compositionally Graded Al-SiC_p Composites." Materials Science Forum 449-452 (March 2004): 621–24. http://dx.doi.org/10.4028/www.scientific.net/msf.449-452.621.

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Анотація:

Compositionally graded Al-SiCp composites were fabricated using pressureless infiltration process. Microstructure was examined and thermal properties were characterized for Al-SiCp composites. Al-SiCp composites with fairly uniform distribution and compositional gradient of SiC reinforcement in the Al matrix though the thickness direction was successfully fabricated. The thermal conductivity of Al-SiCp composites was measured at room temperature, 200°C and 400°C using laser flash method. Thermal conductivity of Al-SiCp composites increases non-linearly with decreasing the volume fraction of SiC. Cyclic thermal shock fatigue tests were performed by immersing Al-SiCp functionally graded materials(FGM) into water from the various heating temperatures of 400°C , 300°C and 200°C , repeatedly. After cyclic thermal shock fatigue tests, micro-hardness was measured and formation of cracks was investigated.e fati

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33

Kim, Eun Seong, Jeong Min Park, Gangaraju Manogna Karthik, Kyung Tae Kim, Ji-Hun Yu, Byeong-Joo Lee, and Hyoung Seop Kim. "Local composition detouring for defect-free compositionally graded materials in additive manufacturing." Materials Research Letters 11, no. 7 (April 5, 2023): 586–94. http://dx.doi.org/10.1080/21663831.2023.2192244.

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34

Merino, Rosa I., J. I. Peña, and V. M. Orera. "Compositionally graded YSZ–NiO composites by surface laser melting." Journal of the European Ceramic Society 30, no. 2 (January 2010): 147–52. http://dx.doi.org/10.1016/j.jeurceramsoc.2009.04.031.

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35

Ou, Canlin, Lu Zhang, Qingshen Jing, Vijay Narayan, and Sohini Kar‐Narayan. "Compositionally Graded Organic–Inorganic Nanocomposites for Enhanced Thermoelectric Performance." Advanced Electronic Materials 6, no. 1 (October 14, 2019): 1900720. http://dx.doi.org/10.1002/aelm.201900720.

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36

Singh, Rajiv, and James Fitz-Gerald. "Surface composites: A new class of engineered materials." Journal of Materials Research 12, no. 3 (March 1997): 769–73. http://dx.doi.org/10.1557/jmr.1997.0112.

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Анотація:

To integrate irreconcilable material properties into a single component, a new class of engineered materials termed “surface composites” has been developed. In this engineered material, the second phase is spatially distributed in the near surface regions, such that the phase composition is linearly graded as a function of distance from the surface. Surface composites are different from existing engineered materials such as “bulk composites” and “functionally graded materials” (FGM). Unlike bulk composites, the surface phase in surface composites is present only at the near surface regions. In contrast to FGM, the graded properties of surface composites are achieved by unique morphological surface modification of the bulk phase. To fabricate surface composites, the initial surface of the bulk material is transformed using a novel multiple pulse irradiation technique into truncated cone-like structures. The laser induced micro-rough structures (LIMS) possess surface areas which are up to an order of magnitude higher than the original surface. The second phase is deposited on the surface using thin or thick film deposition methods. A key characteristic of surface composites is the formation of a three-dimensional, compositionally and thermally graded interface, which gives rise to improved adhesion of the surface phase. Examples of various types of surface composites such as W/Mo, silica/SiC, diamond/steel, etc. are presented in this paper. The unique properties of surface composites make them ideal engineered materials for applications involving adherent thick film coatings of thermally mismatched materials, compositional surface modification for controlled catalytic activity, and creating adherent metal-ceramic and ceramic-polymeric joints.

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37

Ben-Artzy, A., A. Reichardt, J. P. Borgonia, R. P. Dillon, B. McEnerney, A. A. Shapiro, and P. Hosemann. "Compositionally graded SS316 to C300 Maraging steel using additive manufacturing." Materials & Design 201 (March 2021): 109500. http://dx.doi.org/10.1016/j.matdes.2021.109500.

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38

Yahyaoui, N., S. Aloulou, R. Chtourou, A. Sfaxi, and M. Oueslati. "Optical properties of compositionally graded InxAl1–xAs/GaAs heterostructures." Thin Solid Films 516, no. 7 (February 2008): 1604–7. http://dx.doi.org/10.1016/j.tsf.2007.03.083.

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39

Adikary, Sudarman Upali, Balakrishnan Sundaravel, Helen Lai-Wa Chan, Ian Howard Wilson, and Chung-Loong Choy. "Rutherford backscattering analysis of compositionally graded BaxSr1-xTiO3thin films." Ferroelectrics 262, no. 1 (January 2001): 287–92. http://dx.doi.org/10.1080/00150190108225164.

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40

Chen, Chang, Zi Liu, Gui Wang, and Xiao Feng. "Fabrication and characterization of compositionally graded Bi1−x GdxFeO3 thin films." Materials Science-Poland 32, no. 3 (September 1, 2014): 498–502. http://dx.doi.org/10.2478/s13536-014-0213-1.

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AbstractAn undoped BiFeO3 thin film, Gd doped Bi0.95Gd0.05FeO3 thin film with a constant composition, Gd up-graded doped Bi1−x GdxFeO3 and Gd down-graded doped Bi1−x GdxFeO3 thin films were successfully grown on Pt (111)/Ti/SiO2/Si (100) substrates using a sol-gel and spin coating technique. The crystal structure, ferroelectric and dielectric characteristics as well as the leakage currents of these samples were thoroughly investigated. The XRD (X-Ray Diffraction) patterns indicate that all these thin films consist of solely perovskite phase with polycrystalline structure. No other secondary phases have been detected. Clear polarization-electric field (P-E) hysteresis loops of all these thin films demonstrate that the incorporation of Gd3+ into the Bi site of BFO thin film have enhanced the ferroelectric performance of pure BiFeO3 thin film, and the Gd down-graded doped Bi1−x GdxFeO3 thin film has the best ferroelectric properties. Compared to other thin films, the optimal ferroelectric behavior of the Gd down-graded doped Bi1−x GdxFeO3 thin film results from its large dielectric constant, low dissipation factor and low leakage current.

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41

ZHONG, S., S. ALPAY, Z. G. BAN, and J. V. MANTESE. "DIELECTRIC PERMITTIVITY AND PYROELECTRIC RESPONSE OF COMPOSITIONALLY GRADED FERROELECTRICS." Integrated Ferroelectrics 71, no. 1 (July 2005): 1–9. http://dx.doi.org/10.1080/10584580590965005.

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42

Sbrockey, N. M., M. W. Cole, T. S. Kalkur, M. Luong, J. E. Spanier, and G. S. Tompa. "MOCVD Growth of Compositionally Graded BaxSr1-xTiO3 Thin Films." Integrated Ferroelectrics 126, no. 1 (January 2011): 21–27. http://dx.doi.org/10.1080/10584587.2011.574975.

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43

Matsumoto, Yuji, Shingo Maruyama, and Kenichi Kaminaga. "Compositionally graded crystals as a revived approach for new crystal engineering for the exploration of novel functionalities." CrystEngComm 24, no. 13 (2022): 2359–69. http://dx.doi.org/10.1039/d2ce00041e.

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44

Jia, Mingyong, Fei Chen, Yueqi Wu, Like Xu, Qiang Shen, Nan Jiang, and Jian Sun. "Microstructure and shear fracture behavior of Mo/AlN/Mo symmetrical compositionally graded materials." Materials Science and Engineering: A 834 (February 2022): 142591. http://dx.doi.org/10.1016/j.msea.2021.142591.

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45

Jandl, Adam, Mayank T. Bulsara, and Eugene A. Fitzgerald. "Materials properties and dislocation dynamics in InAsP compositionally graded buffers on InP substrates." Journal of Applied Physics 115, no. 15 (April 21, 2014): 153503. http://dx.doi.org/10.1063/1.4871289.

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46

Adikary, S. U., and H. L. W. Chan. "Compositionally graded BaxSr1−xTiO3 thin films for tunable microwave applications." Materials Chemistry and Physics 79, no. 2-3 (April 2003): 157–60. http://dx.doi.org/10.1016/s0254-0584(02)00255-9.

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47

Sakai, Joe, José Manuel Caicedo Roque, Pablo Vales-Castro, Jessica Padilla-Pantoja, Guillaume Sauthier, Gustau Catalan, and José Santiso. "Control of Lateral Composition Distribution in Graded Films of Soluble Solid Systems A1−xBx by Partitioned Dual-Beam Pulsed Laser Deposition." Coatings 10, no. 6 (June 1, 2020): 540. http://dx.doi.org/10.3390/coatings10060540.

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Lateral compositionally-graded thin films are powerful media for the observation of phase boundaries as well as for high-throughput materials exploration. We herein propose a method to prepare epitaxial lateral compositionally-graded films using a dual-beam pulsed laser deposition (PLD) method with two targets separated by a partition. Tuning the ambient pressure and the partition—substrate gap makes it possible to control of the gradient length of the deposits at the small sizes (≤ 10 mm) suitable for commercial oxide single crystal substrates. A simple Monte Carlo simulation qualitatively reproduced the characteristic features of the lateral thickness distribution. To demonstrate this method, we prepared (1−x)PbTiO3—xPbZrO3 and (1−x)LaMnO3—xLa0.6Sr0.4MnO3 films with lateral composition gradient widths of 10 and 1 mm, respectively, with the partitioned dual PLD.

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48

Li, Xuefei, Jianming Xu, Tieshi Wei, Wenxian Yang, Shan Jin, Yuanyuan Wu, and Shulong Lu. "Enhanced Properties of Extended Wavelength InGaAs on Compositionally Undulating Step-Graded InAsP Buffers Grown by Molecular Beam Epitaxy." Crystals 11, no. 12 (December 20, 2021): 1590. http://dx.doi.org/10.3390/cryst11121590.

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The extended wavelength InGaAs material (2.3 μm) was prepared by introducing compositionally undulating step-graded InAsyP1−y buffers with unequal layer thickness grown by solid-source molecular beam epitaxy (MBE). The properties of the extended wavelength InGaAs layer were investigated. The surface showed ordered crosshatch morphology and a low roughness of 1.38 nm. Full relaxation, steep interface and less than one threading dislocation in the InGaAs layer were demonstrated by taking advantage of the strain compensation mechanism. Room temperature photoluminescence (PL) exhibited remarkable intensity attributed to the lower density of deep non-radiative centers. The emission peak energy with varied temperatures was in good agreement with Varshni’s empirical equation, implying high crystal quality without inhomogeneity-induced localized states. Therefore, our work shows that compositionally undulating step-graded InAsP buffers with a thinner bottom modulation layer, grown by molecular beam epitaxy, is an effective approach to prepare InGaAs materials with wavelengths longer than 2.0 μm and to break the lattice limitation on the materials with even larger mismatch.

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49

Ayers, J. E., Tedi Kujofsa, Johanna Raphael, and Md Tanvirul Islam. "Recent Advances in the Modeling of Strain Relaxation and Dislocation Dynamics in InGaAs/GaAs (001) Heterostructures." International Journal of High Speed Electronics and Systems 29, no. 01n04 (March 2020): 2040005. http://dx.doi.org/10.1142/s0129156420400054.

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In this paper we describe state-of-the-art approaches to the modeling of strain relaxation and dislocation dynamics in InGaAs/GaAs (001) heterostructures. Current approaches are all based on the extension of the original Dodson and Tsao plastic flow model to include compositional grading and multilayers, dislocation interactions, and differential thermal expansion. Important recent break-throughs have greatly enhanced the utility of these modeling approaches in four respects: i) pinning interactions are included in graded and multilayered structures, providing a better description of the limiting strain relaxation as well as the dislocation sidewall gettering; ii) a refined model for dislocation-dislocation interactions including zagging enables a more accurate physical description of compositionally-graded layers and step-graded layers; iii) inclusion of back-and-forth weaving of dislocations provides a better description of dislocation dynamics in structures containing strain reversals, such as strained-layer superlattices or overshoot graded layers; and iv) the compositional dependence of the model kinetic parameters has been elucidated for the InGaAs material system, allowing more accurate modeling of heterostructures with wide variations in composition. We will describe these four key advances and illustrate their applications to heterostructures of practical interest.

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50

Yoon, Jong-Gul. "A New Approach to the Fabrication of Memristive Neuromorphic Devices: Compositionally Graded Films." Materials 13, no. 17 (August 20, 2020): 3680. http://dx.doi.org/10.3390/ma13173680.

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Energy-efficient computing paradigms beyond conventional von-Neumann architecture, such as neuromorphic computing, require novel devices that enable information storage at nanoscale in an analogue way and in-memory computing. Memristive devices with long-/short-term synaptic plasticity are expected to provide a more capable neuromorphic system compared to traditional Si-based complementary metal-oxide-semiconductor circuits. Here, compositionally graded oxide films of Al-doped MgxZn1−xO (g-Al:MgZnO) are studied to fabricate a memristive device, in which the composition of the film changes continuously through the film thickness. Compositional grading in the films should give rise to asymmetry of Schottky barrier heights at the film-electrode interfaces. The g-Al:MgZnO films are grown by using aerosol-assisted chemical vapor deposition. The current-voltage (I-V) and capacitance-voltage (C-V) characteristics of the films show self-rectifying memristive behaviors which are dependent on maximum applied voltage and repeated application of electrical pulses. Endurance and retention performance tests of the device show stable bipolar resistance switching (BRS) with a short-term memory effect. The short-term memory effects are ascribed to the thermally activated release of the trapped electrons near/at the g-Al:MgZnO film-electrode interface of the device. The volatile resistive switching can be used as a potential selector device in a crossbar memory array and a short-term synapse in neuromorphic computing.

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