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Готові списки джерел за темами / Compact thermal modeling / Статті в журналах

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Статті в журналах з теми "Compact thermal modeling"

Автор: Grafiati

Опубліковано: 25 червня 2022

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1

Wei Huang, M. R. Stan, and K. Skadron. "Parameterized physical compact thermal modeling." IEEE Transactions on Components and Packaging Technologies 28, no. 4 (December 2005): 615–22. http://dx.doi.org/10.1109/tcapt.2005.859737.

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2

Lasance, C. "Special section on compact thermal modeling." IEEE Transactions on Components and Packaging Technologies 26, no. 1 (March 2003): 134–35. http://dx.doi.org/10.1109/tcapt.2003.814000.

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3

Codecasa, L., D. D'Amore, and P. Maffezzoni. "Compact Thermal Networks for Modeling Packages." IEEE Transactions on Components and Packaging Technologies 27, no. 1 (March 2004): 96–103. http://dx.doi.org/10.1109/tcapt.2004.825796.

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4

Narasimhan, S., A. Bar-Cohen, and R. Nair. "Thermal compact modeling of parallel plate heat sinks." IEEE Transactions on Components and Packaging Technologies 26, no. 1 (March 2003): 136–46. http://dx.doi.org/10.1109/tcapt.2003.811860.

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5

Janicki, Marcin, Przemysław Ptak, Tomasz Torzewicz, and Krzysztof Górecki. "Compact Thermal Modeling of Modules Containing Multiple Power LEDs." Energies 13, no. 12 (June 17, 2020): 3130. http://dx.doi.org/10.3390/en13123130.

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Анотація:

Temperature is an essential factor affecting the operation of light-emitting diodes (LEDs), which are often used in circuits containing multiple devices influencing each other. Therefore, the thermal models of such circuits should take into account not only the self-heating effects, but also the mutual thermal influences among devices. This problem is illustrated here based on the example of a module containing six LEDs forming on the substrate a hexagon. This module is supposed to operate without any heat sink in the natural convection cooling conditions, hence it has been proposed to increase the thermal pad area in order to lower the device-operating temperature. In the experimental part of the paper, the recorded diode-heating curves are processed using the network identification by deconvolution method. This allows for the computation of the thermal time constant spectra and the generation of device-compact thermal models. Moreover, the influence of the thermal pad surface area on the device temperature and the thermal coupling between LEDs is investigated.

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6

Chen, Ming, Yan Ting Yu, Bo Wang, and Yong Tang. "Test of IGBT Transient Thermal Impedance and Modeling Research on Thermal Model." Advanced Materials Research 148-149 (October 2010): 429–33. http://dx.doi.org/10.4028/www.scientific.net/amr.148-149.429.

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As the operation performances and reliability of semiconductor devices are tightly related to its operating temperature, the research on the heat transfer characteristic and thermal modeling do a significant meaning to extend services lifetime and improve application reliability of the IGBT modules. The physical structure and the conception, RC component network of thermal resistance, test principle and platform of the transient thermal impedance of IGBT module and three modeling methods are briefly introduced. The parameters of Cauer RC thermal network of a certain type IGBT is derived based on transmission line method. The junction-case thermal resistance can be deduced by Finite Element Method in the numerical simulator ANSYS and the transient thermal impedance curve. Thermal compact model can also be deduced from the numerical simulation and experimental results. An excellent agreement is obtained between experimental results derived by the transient thermal impedance curve and numerical simulation results based on FEM. The thermal compact model and experimental results could be helpful for modeling of thermal model and heat sink design for such electronic devices.

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7

Codecasa, Lorenzo, Vincenzo d’Alessandro, Alessandro Magnani, Niccolò Rinaldi, Andre G. Metzger, Robin Bornoff, and John Parry. "Partition-based approach to parametric dynamic compact thermal modeling." Microelectronics Reliability 79 (December 2017): 361–70. http://dx.doi.org/10.1016/j.microrel.2017.06.059.

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8

KOYAMADA, Koji, Yasuharu YAMADA, Toshihiko NISHIO, and Hidetoshi KOTERA. "Compact Modeling Approach using GA for Accurate Thermal Simulation." Transactions of the Japan Society of Mechanical Engineers Series B 65, no. 632 (1999): 1370–76. http://dx.doi.org/10.1299/kikaib.65.1370.

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9

Janicki, Marcin, Przemyslaw Ptak, Tomasz Torzewicz, and Krzysztof Gorecki. "Compact Thermal Modeling of Color LEDs—A Comparative Study." IEEE Transactions on Electron Devices 67, no. 8 (August 2020): 3186–90. http://dx.doi.org/10.1109/ted.2020.2998459.

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10

Bartholomeusz, Brian J. "Thermal modeling studies of organic compact disk-writable media." Applied Optics 31, no. 7 (March 1, 1992): 909. http://dx.doi.org/10.1364/ao.31.000909.

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11

KOYAMADA, Koji, Masanori KUZUNO, and Toshihiko NISHIO. "Compact Modeling for Thermal Simulation Using Response Surface Methodology." Proceedings of OPTIS 2000.4 (2000): 187–92. http://dx.doi.org/10.1299/jsmeoptis.2000.4.187.

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12

Roy, A. S., and C. C. Enz. "Compact Modeling of Thermal Noise in the MOS Transistor." IEEE Transactions on Electron Devices 52, no. 4 (April 2005): 611–14. http://dx.doi.org/10.1109/ted.2005.844735.

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13

Kaija, Kimmo, Pekka Heino, and Eero O. Ristolainen. "Modeling Thermal Behavior of System-in-Package with Dynamic Compact Model." Journal of Microelectronics and Electronic Packaging 2, no. 1 (January 1, 2005): 64–71. http://dx.doi.org/10.4071/1551-4897-2.1.64.

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Анотація:

Integrating more functionality into smaller size increases the heat dissipation density and emphasizes the need for thermal simulations and accurate thermal models. With a compact thermal model (CTM) the dynamic and steady state thermal behavior of a package with several heat dissipating dice can be modeled. The optimization of the model's parameters requires a properly defined cost function. In this paper a two-phase optimization routine was used to find simultaneously good capacitance and resistance values. The accuracy of the model was improved when effective surface areas defined the convections of a CTM. Parameter optimization in time domain, for variable thermal load and nonlinear system, was tested and found accurate, but time consuming.

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14

Wang, Y., H. Cai, L. A. B. Naviner, Y. Zhang, J. O. Klein, and W. S. Zhao. "Compact thermal modeling of spin transfer torque magnetic tunnel junction." Microelectronics Reliability 55, no. 9-10 (August 2015): 1649–53. http://dx.doi.org/10.1016/j.microrel.2015.06.029.

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15

Koyamada, Koji, Yasuharu Yamada, Toshihiko Nishio, and Hidetoshi Kotera. "Compact modeling approach using genetic algorithms for accurate thermal simulation." Heat Transfer?Asian Research 30, no. 1 (2000): 28–39. http://dx.doi.org/10.1002/1523-1496(200101)30:1<28::aid-htj4>3.0.co;2-3.

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16

Walter, Frederick M., and Jose A. Pons. "Modeling the Atmosphere of RX J1856.5−3754." Symposium - International Astronomical Union 218 (2004): 279–82. http://dx.doi.org/10.1017/s0074180900181173.

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Анотація:

The nearby compact object RX J1856.5−3754 may be a paradigm for the vast majority of neutron stars. Its spectral energy distribution lacks any non-thermal continuua or lines. Study of the thermal surface has provided insights into the surface and interior properties of neutron stars. We report on attempts to model the spectrum. Non-magnetic heavy metal atmospheres reproduce the overall spectral energy distribution, but not the lack of absorption lines.

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17

Alexeev, A., G. Martin, and G. Onushkin. "Multiple heat path dynamic thermal compact modeling for silicone encapsulated LEDs." Microelectronics Reliability 87 (August 2018): 89–96. http://dx.doi.org/10.1016/j.microrel.2018.05.014.

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18

Liu, Zao, Sheldon X. D. Tan, Hai Wang, Yingbo Hua, and Ashish Gupta. "Compact thermal modeling for packaged microprocessor design with practical power maps." Integration 47, no. 1 (January 2014): 71–85. http://dx.doi.org/10.1016/j.vlsi.2013.07.003.

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19

Wei Huang, S. Ghosh, S. Velusamy, K. Sankaranarayanan, K. Skadron, and M. R. Stan. "HotSpot: a compact thermal modeling methodology for early-stage VLSI design." IEEE Transactions on Very Large Scale Integration (VLSI) Systems 14, no. 5 (May 2006): 501–13. http://dx.doi.org/10.1109/tvlsi.2006.876103.

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20

Melczarsky, I., J. A. Lonac, F. Filicori, and A. Santarelli. "Compact Empirical Modeling of Nonlinear Dynamic Thermal Effects in Electron Devices." IEEE Transactions on Microwave Theory and Techniques 56, no. 9 (September 2008): 2017–24. http://dx.doi.org/10.1109/tmtt.2008.2001956.

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21

Lasance, C. J. M. "Two benchmarks to facilitate the study of compact thermal modeling phenomena." IEEE Transactions on Components and Packaging Technologies 24, no. 4 (2001): 559–65. http://dx.doi.org/10.1109/6144.974943.

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22

Chen, Ming, An Hu, Yong Tang, and Bo Wang. "SABER-Based Simulation for Compact Dynamic Electro-Thermal Modeling Analysis of Power Electronic Devices." Advanced Materials Research 291-294 (July 2011): 1704–8. http://dx.doi.org/10.4028/www.scientific.net/amr.291-294.1704.

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Анотація:

Power electronic modules including insulated gate bipolar transistor (IGBT) are widely used in the field of power converter application. The temperature distribution inside these modules becomes more important for electrical characteristics, reliability and lifetime of integrated power electronic modules. In this paper, a seven-layer compact RC thermal component network model based on the physical structure is presented. A dynamic electro-thermal model, which is composed of electrical model, compact RC thermal component network model and electro-thermal interface is developed for the IGBT. These models interact with each other to calculate the temperature of each layer of module and parameters of each model. The thermal model determines the evolution of the temperature distribution within the thermal network and thus determines the instantaneous junction temperature used by the electrical model. Such built dynamic electro-thermal simulation methodology is implemented in the Saber circuit simulator, and the simulation result is validated by the experimental study, which adopted with infrared thermal imaging camera. The built dynamic electro-thermal model could be helpful for the research on operation performance and heat sink design for such power electronic devices.

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23

Ding, Feilong, Baokang Peng, Xi Li, Lining Zhang, Runsheng Wang, Zhitang Song, and Ru Huang. "A review of compact modeling for phase change memory." Journal of Semiconductors 43, no. 2 (February 1, 2022): 023101. http://dx.doi.org/10.1088/1674-4926/43/2/023101.

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Abstract Phase change memory (PCM) attracts wide attention for the memory-centric computing and neuromorphic computing. For circuit and system designs, PCM compact models are mandatory and their status are reviewed in this work. Macro models and physics-based models have been proposed in different stages of the PCM technology developments. Compact modeling of PCM is indeed more complex than the transistor modeling due to their multi-physics nature including electrical, thermal and phase transition dynamics as well as their interactions. Realizations of the PCM operations including threshold switching, set and reset programming in these models are diverse, which also differs from the perspective of circuit simulations. For the purpose of efficient and reliable designs of the PCM technology, open issues and challenges of the compact modeling are also discussed.

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24

Merrikh, Ali Akbar. "Compact thermal modeling methodology for predicting skin temperature of passively cooled devices." Applied Thermal Engineering 85 (June 2015): 287–96. http://dx.doi.org/10.1016/j.applthermaleng.2015.04.007.

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25

Górecki, Paweł. "Compact Thermal Modeling of Power Semiconductor Devices with the Influence of Atmospheric Pressure." Energies 15, no. 10 (May 12, 2022): 3565. http://dx.doi.org/10.3390/en15103565.

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Анотація:

The efficiency of the heat dissipation process generated in semiconductor devices depends on many factors, related both to the parameters of the cooling system and environmental factors. Regarding the latter factors, ambient temperature and volume in which the device operates are typically indicated as the most important. However, in the case of the operation of semiconductor devices in non-standard conditions, e.g., in stratospheric airships, the thermal parameters of the device are significantly affected by a low value of atmospheric pressure. This paper presents a compact thermal model of a semiconductor device, considering the effects of reduced atmospheric pressure along with its experimental verification under various cooling conditions, thus obtaining high compliance for computation and measurement results. The formulated model is dedicated to circuit-level simulations, and it enables computations of the junction temperature of the semiconductor device in a short time. It is also shown that lowering atmospheric pressure can double the value of the junction-ambient thermal resistance.

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26

Domański, Krzysztof, Piotr Prokaryn, Daniel Tomaszewski, Michał Marchewka, and Piotr Grabiec. "Development and Modeling of Thermal Energy Harvesting Setup." Journal of Nano Research 39 (February 2016): 191–201. http://dx.doi.org/10.4028/www.scientific.net/jnanor.39.191.

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A setup for a thermal energy harvesting based on a conversion of a thermal energy into a mechanical energy followed by a conversion of the mechanical energy into an electric field energy has been developed. The key elements of such a setup are a bimetal spring and electrodes covered by electret layers with a permanent charge. The electrodes are kept at different temperatures. The bimetal spring exchanges the thermal energy with the "hot" and "cold" electrodes. The heating and cooling stimulates the spring vibratios. During the vibrations the spring acts as a common plate of two variable capacitors. The electrodes with the electret layers are the fixed plates of these capacitors. The charge induced continuously at the plates of the capacitors is transferred via a rectifying circuit to the external capacitor.Several aspects of the setup development have been considered, including different electret materials, different methods of the electret charging, and different load capacitors.A compact model of the charging effect has been also developed. It has been implemented in Qucs program, where it is represented as a so-called equation defined device component.

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27

Alexeev, Anton, Grigory Onushkin, Jean-Paul Linnartz, and Genevieve Martin. "Multiple Heat Source Thermal Modeling and Transient Analysis of LEDs." Energies 12, no. 10 (May 15, 2019): 1860. http://dx.doi.org/10.3390/en12101860.

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Анотація:

Thermal transient testing is widely used for LED characterization, derivation of compact models, and calibration of 3D finite element models. The traditional analysis of transient thermal measurements yields a thermal model for a single heat source. However, it appears that secondary heat sources are typically present in LED packages and significantly limit the model’s precision. In this paper, we reveal inaccuracies of thermal transient measurements interpretation associated with the secondary heat sources related to the light trapped in an optical encapsulant and phosphor light conversion losses. We show that both have a significant impact on the transient response for mid-power LED packages. We present a novel methodology of a derivation and calibration of thermal models for LEDs with multiple heat sources. It can be applied not only to monochromatic LEDs but particularly also to LEDs with phosphor light conversion. The methodology enables a separate characterization of the primary pn junction thermal power source and the secondary heat sources in an LED package.

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28

Patil, Chandrashekhar. "A Novel Thermal Modeling of Through Silicon Vias in 3-D IC structures." International Journal of Materials 7 (January 15, 2021): 104–10. http://dx.doi.org/10.46300/91018.2020.7.19.

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Heat mitigation is a major challenge in 3-D IC (ThreeDimensional Integrated Circuit) realization. A study of the analytical thermal behavior of the TSV (Through Silicon Via) is very important. Simple and compact yet other models were found deficient to solve this problem in the literature survey. In this paper resistance networks are used to model the heat transfer of the TSVs, in both vertical and horizontal directions, in simpler and compact models. The accuracy of such models is compared with commercially available CFD (Computational Fluid Dynamics) tool. The error of corrections between the tool and developed models are corrected by multiplication factors, resulted within 4.18% accuracy. Varying the thicknesses of a liner, filer, soldering and substrate materials are studied concerning heat transfer physical behavior of three planar TSV stacked systems. The major purpose is to incorporate both vertical and horizontal thermal resistance networks captured more accurately in heat dissipated paths. Proposed models of TSVs can be used in the active interposer simulations or in the face2face fabrication stacked methods of the 3-D IC structures.

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29

Ender, Ferenc, Márton Németh, Péter Pálovics, Andras Drozdy, and András Poppe. "Thermal compact modeling approach of droplet microreactor based Lab-on-a-Chip devices." Microelectronics Journal 45, no. 12 (December 2014): 1786–94. http://dx.doi.org/10.1016/j.mejo.2014.07.005.

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30

Zhang, Liuyang, Yuanqing Cheng, Wang Kang, Lionel Torres, Youguang Zhang, Aida Todri-Sanial, and Weisheng Zhao. "Addressing the Thermal Issues of STT-MRAM From Compact Modeling to Design Techniques." IEEE Transactions on Nanotechnology 17, no. 2 (March 2018): 345–52. http://dx.doi.org/10.1109/tnano.2018.2803340.

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31

Pacelli, A., P. Palestri, and M. Mastrapasqua. "Compact modeling of thermal resistance in bipolar transistors on bulk and SOI substrates." IEEE Transactions on Electron Devices 49, no. 6 (June 2002): 1027–33. http://dx.doi.org/10.1109/ted.2002.1003724.

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32

Shengjie, Ying, Y. C. Lam, S. C. M. Yu, and K. C. Tam. "Thermal debinding modeling of mass transport and deformation in powder-injection molding compact." Metallurgical and Materials Transactions B 33, no. 3 (June 2002): 477–88. http://dx.doi.org/10.1007/s11663-002-0058-6.

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33

Pohl, László, Gusztáv Hantos, János Hegedüs, Márton Németh, Zsolt Kohári, and András Poppe. "Mixed Detailed and Compact Multi-Domain Modeling to Describe CoB LEDs." Energies 13, no. 16 (August 5, 2020): 4051. http://dx.doi.org/10.3390/en13164051.

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Large area multi-chip LED devices, such as chip-on-board (CoB) LEDs, require the combined use of chip-level multi-domain compact LED models (Spice-like compact models) and the proper description of distributed nature of the thermal environment (the CoB substrate and phosphor) of the LED chips. In this paper, we describe such a new numerical solver that was specifically developed for this purpose. For chip-level, the multi-domain compact modeling approach of the Delphi4LED project is used. This chip-level model is coupled to a finite difference scheme based numerical solver that is used to simulate the thermal phenomena in the substrate and in the phosphor (heat transfer and heat generation). Besides solving the 3D heat-conduction problem, this new numerical simulator also tracks the propagation and absorption of the blue light emitted by the LED chips, as well as the propagation and absorption of the longer wavelength light that is converted by the phosphor from blue. Heat generation in the phosphor, due to conversion loss (Stokes shift), is also modeled. To validate our proposed multi-domain model of the phosphor, dedicated phosphor and LED package samples with known resin—phosphor powder ratios and known geometry were created. These samples were partly used to identify the nature of the temperature dependence of phosphor-conversion efficiency and were also used as simple test cases to “calibrate” and test the new numerical solver. With the models developed, combined simulation of the LED chip and the CoB substrate + phosphor for a known CoB LED device is shown, and the simulation results are compared to measurement results.

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34

Bahrami, M., J. R. Culham, and M. M. Yovanovich. "Modeling Thermal Contact Resistance: A Scale Analysis Approach." Journal of Heat Transfer 126, no. 6 (December 1, 2004): 896–905. http://dx.doi.org/10.1115/1.1795238.

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A compact analytical model is developed for predicting thermal contact resistance (TCR) of nonconforming rough contacts of bare solids in a vacuum. Instead of using probability relationships to model the size and number of microcontacts of Gaussian surfaces, a novel approach is taken by employing the “scale analysis method.” It is demonstrated that the geometry of heat sources on a half-space for microcontacts is justifiable for an applicable range of contact pressure. It is shown that the surface curvature and contact pressure distribution have no effect on the effective microthermal resistance. The present model allows TCR to be predicted over the entire range of nonconforming rough contacts from conforming rough to smooth Hertzian contacts. A new nondimensional parameter, i.e., ratio of the macro- over microthermal resistances, is introduced as a criterion to identify three regions of TCR. The present model is compared to collected TCR data for SS304 and showed excellent agreement. Additionally, more than 880 experimental data points, collected by many researchers, are summarized and compared to the present model, and relatively good agreement is observed. The data cover a wide range of materials, mechanical and thermophysical properties, micro- and macrocontact geometries, and similar and dissimilar metal contacts.

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35

Glowka, D. A., and C. M. Stone. "Thermal Response of Polycrystalline Diamond Compact Cutters Under Simulated Downhole Conditions." Society of Petroleum Engineers Journal 25, no. 02 (April 1, 1985): 143–56. http://dx.doi.org/10.2118/11947-pa.

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Abstract An analytical method is developed to predict temperatures in polycrystalline diamond compact (PDC) drag cutters under steady-state and transient downhole conditions. The method is used to determine mean wearflat temperatures for cutters under conditions used in previous experiments to measure cutter wear. A correlation between wearflat temperatures and cutter wear rates is demonstrated, and it is shown that, for the particular rock type tested, cutter wear rates increase significantly above 350 degrees C [662 degrees F]. The concept of a critical weight on bit, above which wearflat temperatures exceed this value, is introduced. The effects of several parameters on the critical WOB are examined. These include cutter thermal conductivity, diamond layer thickness, rock properties. convective cooling, bit balling, and transient events such as bit bounce. Preliminary results of thermal stress modeling show that Preliminary results of thermal stress modeling show that plastic yielding of the cutter structure can occur under plastic yielding of the cutter structure can occur under certain downhole conditions. Introduction Drill bits using PDC drag cutters have been used for the past few years with considerable success in the oil and past few years with considerable success in the oil and gas drilling industry. Such bits have been shown to be quite sensitive, however, to formation characteristics and operating conditions, and the economic success of a particular bit run is highly dependent on identifying particular bit run is highly dependent on identifying appropriate drilling intervals and operating the bit within its limits. Our interest in PDC bit technology has been in determining the drilling potential of these bits in the more severe environments associated with geothermal resources. This paper addresses the thermal limitations of PDC bits in such environments and investigates the effects of design and operating parameters on these limitations. The work reported in this paper is an extension of work reported earlier. More generalized boundary conditions are used for the finite element thermal modeling of single PDC cutters. The results are used to demonstrate the PDC cutters. The results are used to demonstrate the apparent adverse effect of operating temperature on cutter wear rates. A more restrictive safe operating limit of 350 degrees C [662 degrees F] is proposed, rather than the 750 degrees C [1,382 degrees F] limit assumed in the earlier work. Cutter Temperature Theory and Analysis The thermal phenomena considered in this analysis are frictional heating and convective cooling of PDC cutters under downhole drilling conditions. Fig. 1 is a graphical representation of this process. Because of the relative motion between the cutter and the rock, frictional heat is generated at the interface. The total quantity of frictional heat per unit wearflat area per unit time is (1) Because of the intimate contact between the cutter and the rock, this heat flux is divided between the cutter, Q1, and the rock, Qf, according to the value of the energy partitioning fraction a: partitioning fraction a: (2) and (3) The value of a depends on the relative thermal resistances of the cutter and the rock, which in turn depend on their thermal properties, convective cooling rates, cutting speed, and cutter geometry. A measure of the thermal resistance of the rock is obtained from the literature. Jaeger gives the solution for the mean temperature rise of the contact area between a sliding, square heat source and the surface of a semi-infinite slab as (4) where khf and af are thermal properties of the rock, L is the wearflat length parallel to the cutting direction, and v is the coning speed. Because of the intimate contact between the cutter and the rock, it may be assumed that (5) Combining Eqs. 2 through 5 and assuming that the wellbore has been cooled by the drilling fluid such that Tf = Tfl, the general result is (6) SPEJ p. 143

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36

Ceccarelli, L., A. S. Bahman, and F. Iannuzzo. "Impact of device aging in the compact electro-thermal modeling of SiC power MOSFETs." Microelectronics Reliability 100-101 (September 2019): 113336. http://dx.doi.org/10.1016/j.microrel.2019.06.028.

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37

Sahu, Yogendra, Pragya Kushwaha, Avirup Dasgupta, Chenming Hu, and Yogesh Singh Chauhan. "Compact Modeling of Drain Current Thermal Noise in FDSOI MOSFETs Including Back-Bias Effect." IEEE Transactions on Microwave Theory and Techniques 65, no. 7 (July 2017): 2261–70. http://dx.doi.org/10.1109/tmtt.2017.2666811.

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38

Lasance, Clemens J. M. "Ten Years of Boundary-Condition- Independent Compact Thermal Modeling of Electronic Parts: A Review." Heat Transfer Engineering 29, no. 2 (February 2008): 149–68. http://dx.doi.org/10.1080/01457630701673188.

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39

Cheng, Hsien-Chie, Siang-Yu Lin, and Yan-Cheng Liu. "Transient Electro-Thermal Coupled Modeling of Three-Phase Power MOSFET Inverter during Load Cycles." Materials 14, no. 18 (September 19, 2021): 5427. http://dx.doi.org/10.3390/ma14185427.

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Анотація:

This study introduces an effective and efficient dynamic electro-thermal coupling analysis (ETCA) approach to explore the electro-thermal behavior of a three-phase power metal–oxide–semiconductor field-effect transistor (MOSFET) inverter for brushless direct current motor drive under natural and forced convection during a six-step operation. This coupling analysis integrates three-dimensional electromagnetic simulation for parasitic parameter extraction, simplified equivalent circuit simulation for power loss calculation, and a compact Foster thermal network model for junction temperature prediction, constructed through parametric transient computational fluid dynamics (CFD) thermal analysis. In the proposed ETCA approach, the interactions between the junction temperature and the power losses (conduction and switching losses) and between the parasitics and the switching transients and power losses are all accounted for. The proposed Foster thermal network model and ETCA approach are validated with the CFD thermal analysis and the standard ETCA approach, respectively. The analysis results demonstrate how the proposed models can be used as an effective and efficient means of analysis to characterize the system-level electro-thermal performance of a three-phase bridge inverter.

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40

Kim, Duckjong, Sung Jin Kim, and Alfonso Ortega. "Compact Modeling of Fluid Flow and Heat Transfer in Pin Fin Heat Sinks." Journal of Electronic Packaging 126, no. 3 (September 1, 2004): 342–50. http://dx.doi.org/10.1115/1.1772415.

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Анотація:

In this work, a novel compact modeling method based on the volume-averaging technique is presented. Its application to the analysis of fluid flow and heat transfer in pin fin heat sinks are further analyzed. The pin fin heat sink is modeled as a porous medium. The volume-averaged momentum and energy equations for fluid flow and heat transfer in pin fin heat sinks are obtained by using the local volume-averaging method. The permeability, the Ergun constant, and the interstitial heat transfer coefficient required to solve these equations are determined experimentally and correlations for them are presented. To validate the compact model proposed in this paper, 20 aluminum pin fin heat sinks having a 101.43 mm×101.43 mm base size are tested with an inlet velocity ranging from 1 m/s to 5 m/s. In the experimental investigation, the heat sink is heated uniformly at the bottom. Pressure drop and heat transfer characteristics of pin fin heat sinks obtained from the porous medium approach are compared with experimental results. Upon comparison, the porous medium approach is shown to predict accurately the pressure drop and heat transfer characteristics of pin fin heat sinks. Finally, for minimal thermal resistance, the optimum surface porosities of the pin fin heat sink are obtained under constraints on pumping power and heat sink size. The optimized pin fin heat sinks are shown to be superior to the optimized straight fin heat sinks in thermal performance by about 50% under the same constraints on pumping power and heat sink size.

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41

Angelotti, Alberto Maria, Gian Piero Gibiino, Corrado Florian, and Alberto Santarelli. "Trapping Dynamics in GaN HEMTs for Millimeter-Wave Applications: Measurement-Based Characterization and Technology Comparison." Electronics 10, no. 2 (January 10, 2021): 137. http://dx.doi.org/10.3390/electronics10020137.

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Анотація:

Charge trapping effects represent a major challenge in the performance evaluation and the measurement-based compact modeling of modern short-gate-length (i.e., ≤0.15 m) Gallium Nitride (GaN) high-electron mobility transistors (HEMT) technology for millimeter-wave applications. In this work, we propose a comprehensive experimental methodology based on multi-bias large-signal transient measurements, useful to characterize charge-trapping dynamics in terms of both capture and release mechanisms across the whole device safe operating area (SOA). From this dataset, characterizations, such as static-IV , pulsed-IV, and trapping time constants, are seamlessly extracted, thus allowing for the separation of trapping and thermal phenomena and delivering a complete basis for measurement-based compact modeling. The approach is applied to different state-of-the-art GaN HEMT commercial technologies, providing a comparative analysis of the measured effects.

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42

Angelotti, Alberto Maria, Gian Piero Gibiino, Corrado Florian, and Alberto Santarelli. "Trapping Dynamics in GaN HEMTs for Millimeter-Wave Applications: Measurement-Based Characterization and Technology Comparison." Electronics 10, no. 2 (January 10, 2021): 137. http://dx.doi.org/10.3390/electronics10020137.

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Анотація:

Charge trapping effects represent a major challenge in the performance evaluation and the measurement-based compact modeling of modern short-gate-length (i.e., ≤0.15 μm) Gallium Nitride (GaN) high-electron mobility transistors (HEMT) technology for millimeter-wave applications. In this work, we propose a comprehensive experimental methodology based on multi-bias large-signal transient measurements, useful to characterize charge-trapping dynamics in terms of both capture and release mechanisms across the whole device safe operating area (SOA). From this dataset, characterizations, such as static-IV, pulsed-IV, and trapping time constants, are seamlessly extracted, thus allowing for the separation of trapping and thermal phenomena and delivering a complete basis for measurement-based compact modeling. The approach is applied to different state-of-the-art GaN HEMT commercial technologies, providing a comparative analysis of the measured effects.

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43

Son, Minji, Yesol Woo, Geunjae Kwak, Yun-Jo Lee, and Myung-June Park. "CFD modeling of a compact reactor for methanol synthesis: Maximizing productivity with increased thermal controllability." International Journal of Heat and Mass Transfer 145 (December 2019): 118776. http://dx.doi.org/10.1016/j.ijheatmasstransfer.2019.118776.

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44

Gao, Xin, Min Chen, G. Jeffrey Snyder, Søren Juhl Andreasen, and Søren Knudsen Kær. "Thermal Management Optimization of a Thermoelectric-Integrated Methanol Evaporator Using a Compact CFD Modeling Approach." Journal of Electronic Materials 42, no. 7 (March 7, 2013): 2035–42. http://dx.doi.org/10.1007/s11664-013-2514-2.

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45

Chirtoc, M., and N. Horny. "Toolbox for modeling frequency-domain photothermal experiments on multilayers." Journal of Applied Physics 131, no. 21 (June 7, 2022): 214502. http://dx.doi.org/10.1063/5.0091688.

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Анотація:

A general expression (master equation, ME) is derived for the thermal impedance in photothermal experiments in a multilayer system, based on one-dimensional (1D) periodic heat diffusion. The ME in a compact form benefits from newly defined generalized, higher-order thermal reflection and transmission coefficients. The modeled system comprises seven layers among which a semitransparent sample and a transducer that integrates the temperature field within it (e.g., a pyroelectric sensor). The ME can be adapted to various experimental cell structures used in photopyroelectric, photoacoustic, photothermal radiometry, or thermoreflectance methods using volume- or surface-temperature detection, in view of spectroscopic applications or thermophysical properties determination. The derivation of special cases is facilitated by applying simple contraction rules to dimensionless quantities. Modeling multiple heat sources in the system is done by superposition of individual solutions. The possible extension of the 1D model to 2D geometry is demonstrated, in general, and practical criteria are discussed.

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46

Saleh, Alaa, Abdel Kader El Rafei, Mountakha Dieng, Tibault Reveyrand, Raphael Sommet, Jean-Michel Nebus, and Raymond Quere. "Compact RF non-linear electro thermal model of SiGe HBT for the design of broadband ADC's." International Journal of Microwave and Wireless Technologies 4, no. 6 (August 29, 2012): 569–78. http://dx.doi.org/10.1017/s1759078712000566.

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Анотація:

The design of high speed integrated circuits heavily relies on circuit simulation and requires compact transistor models. This paper presents a non-linear electro-thermal model of SiGe heterojunction-bipolar transistor (HBT). The non-linear model presented in this paper uses a hybrid π topology and it is extracted using IV and S-parameter measurements. The thermal sub-circuit is extracted using low-frequency S-parameter measurements. The model extraction procedure is described in detail. It is applied here to the modeling of npn SiGe HBTs. The proposed non-linear electro-thermal model is expected to be used for the design of high-speed electronic functions such as broadband analog digital converters in which both electrical and thermal aspects are engaged. The main focus and contribution of this paper stands in the fact that the proposed non-linear model covers wideband-frequency range (up to 65 GHz).

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47

Colangelo, Alessandro, Elisa Guelpa, Andrea Lanzini, Giulia Mancò, and Vittorio Verda. "Compact Model of Latent Heat Thermal Storage for Its Integration in Multi-Energy Systems." Applied Sciences 10, no. 24 (December 16, 2020): 8970. http://dx.doi.org/10.3390/app10248970.

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Анотація:

Nowadays, flexibility through energy storage constitutes a key feature for the optimal management of energy systems. Concerning thermal energy, Latent Heat Thermal Storage (LHTS) units are characterized by a significantly higher energy density with respect to sensible storage systems. For this reason, they represent an interesting solution where limited space is available. Nevertheless, their market development is limited by engineering issues and, most importantly, by scarce knowledge about LHTS integration in existing energy systems. This study presents a new modeling approach to quickly characterize the dynamic behavior of an LHTS unit. The thermal power released or absorbed by a LHTS module is expressed only as a function of the current and the initial state of charge. The proposed model allows simulating even partial charge and discharge processes. Results are fairly accurate when compared to a 2D finite volume model, although the computational effort is considerably lower. Summarizing, the proposed model could be used to investigate optimal LHTS control strategies at the system level. In this paper, two relevant case studies are presented: (a) the reduction of the morning thermal power peak in District Heating systems; and (b) the optimal energy supply schedule in multi-energy systems.

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48

Scognamillo, Ciro, Antonio Pio Catalano, Michele Riccio, Vincenzo d’Alessandro, Lorenzo Codecasa, Alessandro Borghese, Ravi Nath Tripathi, Alberto Castellazzi, Giovanni Breglio, and Andrea Irace. "Compact Modeling of a 3.3 kV SiC MOSFET Power Module for Detailed Circuit-Level Electrothermal Simulations Including Parasitics." Energies 14, no. 15 (August 2, 2021): 4683. http://dx.doi.org/10.3390/en14154683.

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Анотація:

In this paper, an advanced electrothermal simulation strategy is applied to a 3.3 kV silicon carbide MOSFET power module. The approach is based on a full circuital representation of the module, where use is made of the thermal equivalent of the Ohm’s law. The individual transistors are described with subcircuits, while the dynamic power-temperature feedback is accounted for through an equivalent thermal network enriched with controlled sources enabling nonlinear thermal effects. A synchronous step-up DC-DC converter and a single-phase inverter, both incorporating the aforementioned power module, are simulated. Good accuracy was ensured by considering electromagnetic effects due to parasitics, which were experimentally extracted in a preliminary stage. Low CPU times are needed, and no convergence issues are encountered in spite of the high switching frequencies. The impact of some key parameters is effortlessly quantified. The analysis witnesses the efficiency and versatility of the approach, and suggests its adoption for design, analysis, and synthesis of high-frequency power converters in wide-band-gap semiconductor technology.

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49

Codecasa, Lorenzo, Vincenzo d'Alessandro, Alessandro Magnani, and Niccolo Rinaldi. "Fast Nonlinear Dynamic Compact Thermal Modeling With Multiple Heat Sources in Ultra-Thin Chip Stacking Technology." IEEE Transactions on Components, Packaging and Manufacturing Technology 7, no. 1 (January 2017): 58–69. http://dx.doi.org/10.1109/tcpmt.2016.2623420.

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50

Khoong, L. E., Y. C. Lam, J. C. Chai, J. Ma, and L. Jiang. "Modeling of mass transfers in a porous green compact with two-component binder during thermal debinding." Chemical Engineering Science 64, no. 12 (June 2009): 2837–50. http://dx.doi.org/10.1016/j.ces.2009.03.006.

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