Дисертації з теми "CNT MODEL FOR FIELD EMISSION"
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Parmee, Richard. "X-ray generation by field emission." Thesis, University of Cambridge, 2018. https://www.repository.cam.ac.uk/handle/1810/284924.
Повний текст джерелаChristy, Larry A. "Field Emission Properties of Carbon Nanotube Fibers and Sheets for a High Current Electron Source." University of Cincinnati / OhioLINK, 2014. http://rave.ohiolink.edu/etdc/view?acc_num=ucin1406819279.
Повний текст джерелаNavitski, Aliaksandr [Verfasser]. "Scanning field emission investigations of structured CNT and MNW cathodes, niobium surfaces and photocathodes / Aliaksandr Navitski." Wuppertal : Universitätsbibliothek Wuppertal, 2010. http://d-nb.info/1009494678/34.
Повний текст джерелаSrinivasan, Srikant. "A Compact Model for the Coaxially Gated Schottky Barrier Carbon Nanotube Field Effect Transistor." University of Cincinnati / OhioLINK, 2006. http://rave.ohiolink.edu/etdc/view?acc_num=ucin1161897189.
Повний текст джерелаJones, Randolph D. "Circuit model of a low-voltage field emission cathode." Diss., Georgia Institute of Technology, 1985. http://hdl.handle.net/1853/15631.
Повний текст джерелаZhu, Weiming. "Multiscale Model of Heat Dissipation Mechanisms During Field Emission from Carbon Nanotube Fibers." University of Cincinnati / OhioLINK, 2018. http://rave.ohiolink.edu/etdc/view?acc_num=ucin1530880336075941.
Повний текст джерелаEberhardt, Oliver, and Thomas Wallmersperger. "Analysis of the mechanical behavior of single wall carbon nanotubes by a modified molecular structural mechanics model incorporating an advanced chemical force field." SPIE, 2018. https://tud.qucosa.de/id/qucosa%3A35173.
Повний текст джерелаDionne, Martin. "Optimized carbon nanotube array cathodes for thermo-field emission in plasmas: a theoretical model and an experimental verification." Thesis, McGill University, 2011. http://digitool.Library.McGill.CA:80/R/?func=dbin-jump-full&object_id=97045.
Повний текст джерелаDans le cadre de ce projet nous avons développé un modèle en 3-D pour l'émission électronique par effet thermo-champ stimulée par un plasma. Nos premiers résultats ont indiqué que des réseaux denses de nanotubes de carbone (NTC) agissant en tant qu'émetteurs dans le vide pouvaient supporter les températures résultant de densité de courant moyennes très élevées de l'ordre de celles présentes dans les taches cathodiques d'arcs opérant sur des cathodes non-réfractaires. Une étude comparative des modèles pour l'émission électronique pour les surfaces froides soumises à de forts champs électriques a révélé l'existence d'une relation simple entre l'équation imprécise de Fowler-Nordheim (F-N) et le résultat accepté fourni par la théorie de Murphy et Good (M-G). Nous avons donc proposé une équation paramétrique précise et simple pour la densité de courant émise. L'usage de la théorie de M-G a aussi fourni une explication pour l'effet de refroidissement à la pointe décrit dans une étude précédente sur la destruction de NTC émettant par effet de champ: l'effet Nottingham. Pour des émetteurs très courts, cet effet particulier chauffe la surface et accélère le processus de destruction et pour de longs émetteurs, il crée une petite zone isotherme à la pointe de l'émetteur qui est détruite lorsqu'elle atteint une température critique (approximativement 1850 K). Lorsque combiné à des données sur la longueur de l'émetteur, son diamètre, la tension appliquée et le courant mesuré, notre modèle peut fournir le travail de sortie de l'émetteur, sa résistivité à la température ambiante et la valeur de la résistance de contact thermique entre l'émetteur et son substrat. Une autre version de ce modèle inclut un calcul du champ électrique de surface en présence d'un plasma froid. À cette fin, nous avons modifié le modèle développé par Mackeown et obtenu un résultat général pour des surfaces en 3-D. Cette expression générale requiert le calcul du facteur d'amplification du flux ionique, lequel peut être obtenu en résolvant l'équation de Laplace au dessus de la structure d'intérêt. Cette approche simple nous permet de décrire comment les ions sont redistribués à l'intérieur de la gaine vers la pointe des NTC où le champ électrique augmente. Ces prédictions ont été testées en développant simultanément un procédé de fabrication pour une électrode composite correspondant au schéma optimisé que nous suggérions. Des patrons d'oxyde anodique d'aluminium furent utilisés en tant que substrats pour faire croître nos réseaux de NTC mais afin de faciliter leur usage à grande échelle nous avons modifié le procédé de production des NTC pour permettre l'usage directe d'aluminium commercial anodisé. Nos électrodes furent ensuite utilisées comme cathodes dans des décharges à basse pression. Les tensions et densités de courant mesurées sont différentes des valeurs typiques rencontrées dans les décharges électroluminescentes utilisant comme électrodes, des surfaces d'aluminium. En fait, en raison du très faible travail de sortie des sites d'émission pointus et relativement ordonnés et de la présence simultanée d'un patron de céramique autour d'eux, nos électrodes ont produit des points d'attachement très diffus pour le plasma d'une façon similaire à ce qui est observé pour des cathodes réfractaires chaudes telles que le tungstène. Les tensions d'opération, dans la plage 38-140 V, sont de beaucoup inférieures aux tensions observées avec des électrode d'aluminium (>200 V). Nos électrodes ont aussi démontré leur capacité de maintenir ces décharges à basse tension pour au moins 500 heures si leur température moyenne était maintenue sous 60 Celsius et si de la vapeur d'eau était ajoutée au gaz injecté. Nos expériences dans des mélanges d'azote et d'eau ont démontré la faisabilité de produire de larges quantités de photons UV pour un potentiel anodique (cathode mise à la terre) de 90-100 V. Ces résultats sont très prometteurs pour de futures applications en éclairage.
Abdioskouei, Maryam. "Improving air quality prediction through characterizing the model errors using data from comprehensive field experiments." Diss., University of Iowa, 2018. https://ir.uiowa.edu/etd/6535.
Повний текст джерелаMIZUTANI, Teruyoshi, Tatsuo MORI, Kazue KANEKO, Don-Chan CHO, and Takuya OGAWA. "Study on the Conduction Mechanism of Organic Light-Emitting Diode Using One-Dimensional Discontinuous Model." Institute of Electronics, Information and Communication Engineers, 2002. http://hdl.handle.net/2237/15010.
Повний текст джерелаBrum, José Antonio. "Etude theorique des proprietes electroniques des heterostructures de semiconducteurs." Paris 7, 1987. http://www.theses.fr/1987PA077006.
Повний текст джерелаSHARMA, ANAND. "FIELD EMISSION OF ELECTRONS FROM HEMISPHERICAL CONDUCTING CARBON NANOTUBE TIP INCLUDING THE EFFECT OF IMAGE FORCE." Thesis, 2016. http://dspace.dtu.ac.in:8080/jspui/handle/repository/14632.
Повний текст джерелаLu, Duan Shao, and 盧端劭. "The effects of CNT graphitization on the field emission characterictics." Thesis, 2004. http://ndltd.ncl.edu.tw/handle/76027330436978370735.
Повний текст джерела國立中興大學
電機工程學系
92
In this research, the carbon nano tubes (CNTs) are grown by controlling methane flow, plasma power and nitrogen flow. The Raman spectrum is measured to analyze the relative concentration of diamond structure (D-band) and graphite structure (G-band). The growth rate of CNTs increases as the methane flow rate increase, however, the properties of CNT is not as good as that grown by lower flow rate. The tubes are twisty, some carbon black spots are observed in CNTs. The growth rate of CNTs becomes slow when nitrogen is mixed to dilute the reactant, but on the other side the quality of CNTs becomes better and the tubes are more straightly. The field emission data shoes that the current emitted has certain correlation with the D-band over G-band intensity ratio. The smaller the ratio means the higher the graphite structure concentration in the CNTs, and the better of the emission property. This observation is consistent with morphologic observations mention above. Key words: Carbon nano tubes, field emission, graphite structure, diamond structure
Li, Shao-Hua, and 李紹華. "Dependence of field emission properties of CNT arrays on the underly metals." Thesis, 2007. http://ndltd.ncl.edu.tw/handle/07583369826967682063.
Повний текст джерелаChen, Pin-Hong, and 陳品宏. "Characteristics and Enhanced Field Emission Properties of N-doped TiO2/CNT Bundle Arrays." Thesis, 2012. http://ndltd.ncl.edu.tw/handle/69695992978846458924.
Повний текст джерела國立臺灣科技大學
電子工程系
100
Anatase titanium dioxide (A-TiO2) were grown on top of carbon nanotube (CNT) bundle arrays by metal organic chemical vapor deposition (MOCVD) using titanium-tetraisopropoxide (TTIP, Ti[OCH(CH3)2]4) as the source reagents. The N-doped A-TiO2/CNTs nanocomposite was then fabricated with nitrogen plasma treatment. The surface morphology, structural and spectroscopic properties of the A-TiO2/CNTs and N-doped A-TiO2/CNTs nanocomposites were characterized using Field-emission scanning electron microscopy (FESEM), Raman spectroscopy, Transmission electron microscopy (TEM), and X-ray photoelectron spectroscopy (XPS). The FESEM image showed a dense coalescence of A-TiO2 with uniform size distribution on the nanotube walls. Raman spectra revealed that nanostructural A-TiO2 had been deposited on the CNT nanocrystals and a new vibration mode of D^'-band at higher wavenumber side was also found. The XPS spectra in the region of N 1s, Ti 2p and O 1s provided a conclusive evidence of the formation of O-Ti-N bond during nitrogen treatment process. The TEM image of A-TiO2 deposited CNT showed uniform distribution, and random directions of A-TiO2 had been grown on the surface of the CNT. The current density versus electric field measurements yielded turn-on field of 1.8 V/?慆 and 1.0 V/?慆 at a current density of 10 ?嫀/cm2, threshold field of 3.6 V/?慆 and 1.9 V/?慆 at a current density of 1 mA/cm2, and field enhancement factor of 2700 and 3000 for the A-TiO2/CNTs and N-doped A-TiO2/CNTs nanocomposites, respectively. Long term stability studies were also carried out. The results indicated that nitrogen doping decreased the turn-on field and threshold field of A-TiO2/CNTs, providing stable field emission applications. The probable mechanisms of field emission enhancement for N-doped A-TiO2/CNTs composite were proposed and discussed.
TsaiMing-che and 蔡銘哲. "Effect of alloy catalyst on the growing characters of CNT and its field emission properties." Thesis, 2007. http://ndltd.ncl.edu.tw/handle/47472912365598774275.
Повний текст джерела崑山科技大學
電子工程研究所
95
The iron, cobalt and nickel are three kinds of element most used as catalyst to grow CNT. However the research report pointed out that, the alloy catalyst which contains two different kinds of element has special effect on controlling CNT growth and caliber. The present research mainly uses RF Magnetron sputtering system to prepare the metal catalysts. The metal catalyst used in this study is nickel metal doped with different percent of iron metal and annealed to become a Ni-Fe alloy catalyst. By changing the composition of alloy catalyst, the growth of CNT and the character of field emission were studied. The alloy catalysts were etched by the microwave plasma enhanced chemical vapor deposition system in hydrogen atmosphere to produce nano scale catalysts. Then the mixture of methane and hydrogen were fed into the system to grow CNT at 500℃. The as-grown CNT samples were characterized by FE-SEM、TEM and Raman Spectroscopy. Its field emission properties were characterized by the I-V Measurement. The result shows that using Ni-Fe alloy catalyst will produce branched shape CNT. These CNT observed by the TEM showing a hollow bamboo structure with multi-walled CNT. Increasing the Fe amount in catalyst, the behavior of field emission is better. When Fe content in alloy catalyst is 39.4wt%, the lowest initial voltage of emission is 6.8V/μm and the highest current density is 314μA/cm2.
Hsu, Jen-Hao, and 許仁豪. "Effect of underlying metals and emitter patterns on the field emission properties of CNT diode devices." Thesis, 2006. http://ndltd.ncl.edu.tw/handle/92739368315904563539.
Повний текст джерела國立嘉義大學
光電暨固態電子研究所
94
The present paper mainly was used the microwave plasma enhanced-chemical vapor deposition(MP-CVD) growing carbon nanotube (CNTs) by (Ni) the array (10μm x 10μm) and different spaces (20μm、15μm、10μm、5μm) with four different metals (TiN,Ti,Ta) to be the barrier layer。 The advantage used MP-CVD in the catalyzed metal (Ni) the array to grow the high density and vertically aligned CNTs。Then changed diverse parameters to grow CNTs and compared field emission characteristic by penetration vacuum electric properties measurement system measured field emission properties,the scanning electron microscope (SEM) to visit the appearance of carbon nanotube。And the Raman spectrum to obtain D-band and G-band, two area compare by a type, if the degree more greatly graphitization is better。 By the experiment we can suppose that higher temperature or higher microwave power cause better degree of graphitization。Degree of graphitization:TiN >Ta>Ti,Diameter of CNTs:TiN>Ta>Ti。Field emission properties: Ti >Ta>TiN。
"Development of carbon nanotubes with a diamond interlayer for field electron emission and heat transfer applications." Thesis, 2015. http://hdl.handle.net/10388/ETD-2015-10-2301.
Повний текст джерелаHuang, Hsin-Kuo, and 黃信國. "The Influence of Sodium Metasilicate/TEOS Inorganic Binders and Silver Fillers on the CNT Film Field Emission Characteristics." Thesis, 2007. http://ndltd.ncl.edu.tw/handle/28358147820347999648.
Повний текст джерела逢甲大學
紡織工程所
95
This study discussed field emission characteristics, film surface resistance and film surface morphology of CNT film contained sodium metasilicate and TEOS inorganic binder. The experimental results showed that the CNT paste containing sodium metasilicate(50 wt%) and TEOS inorganic binder both had good dispersion with CNT. SEM images showed that the CNT film containing sodium metasilicate(50 wt%) and TEOS inorganic binder had very smooth film surface . The CNT film containing sodium metasilicate(50 wt%) had better field emission characteristic than that of containing TEOS, and the turn-on electric field was 6.4 V/μm. In order to decrease CNT film surface resistance, nano Ag powder, nano Ag solution and silver epoxy were filled in the CNT paste containing sodium metasilicate(50 wt%). The surface resistance of CNT fim were decreased when nano Ag powder, nano Ag solution and silver epoxy were added and as a result of descending the turn-on electric field. The CNT film containing nano Ag powder had best field emission characteristics, the turn-on electric field was 3.7 V/μm and the film surface resistance was 550 (Ω•cm). The better dispersion of the CNT film was achieved when the nano Ag powder and nano Ag solution were added comparing with that of silver epoxy. Consequently, the optimal condition for a low turn-on electric field and high surface film conductivity were nano Ag powder and nano Ag solution instead of silver epoxy.
Mancevski, Vladimir. "Fabrication and analysis of carbon nanotube based emitters." Thesis, 2011. http://hdl.handle.net/2152/ETD-UT-2011-08-3990.
Повний текст джерелаtext
Yu, Shu-Chien, and 游舒茜. "A Study in Evaluating New Technology-A Case Study of Carbon Nanotube Field Emission Back Light Unit (CNT-BLU)." Thesis, 2006. http://ndltd.ncl.edu.tw/handle/97550685088655156153.
Повний текст джерела東海大學
工業工程與經營資訊學系
94
Recently, technology is considered as one of the most important driving forces to gain competitive advantages for business under the influence of ever increasing competitive pressures and shortening product life cycles. According to a survey by PDMA (Product Development and Management Association), more than 50% of the sales in high technology companies are coming from new product. Hence, it is clear that the accelerating new product development (NPD) is crucial for companies to be survival and even success. Thus, the attention on management of NPD is essential. On the other hand, the poor selection and management of NPD would result in significant losses of financial and human resources. Therefore, it is very important for product managers to evaluate the viability of a new product at every stage of its development, especially the initial ides screening stage. However, the NPD process is complex and involved varieties and uncertainties of environment problems such like technological competitiveness, customer needs, and so on. Nevertheless, in comparisons with previous study in this area, most literature focuses on technological and financial aspects. As aimed at these issues, this study devises a feasible and systematical mechanism based on Analytic Hierarchical Process (AHP) and scoring techniques to deal with the technology evaluation and provides more complete evaluative criteria, especially bringing manufacturing aspect into evaluative consideration. Then, this study implements a promising technology, Carbon Nanotube Field Emission Back Light Unit (CNT-BLU), to proposed evaluative mechanism and analyzed the result. In conclusions, manufacturing dimension is considered as essential as others for managers to evaluate technology.
RACHANA. "FIELD EMISSION OF ELECTRONS BY TAKING INTO ACCOUNT THE DISTRIBUTION OF CHARGE ALONG THE LENGTH OF METALLIC CARBON NANOTUBES (CNTS)." Thesis, 2021. http://dspace.dtu.ac.in:8080/jspui/handle/repository/19026.
Повний текст джерелаTseng, Shih-Chun, and 曾仕君. "Fabrication single vertically-aligned CNT by using E-beam lithography and Inductively coupled plasma chemical vapor deposition and study the field emission characteristics." Thesis, 2005. http://ndltd.ncl.edu.tw/handle/24143941491355222549.
Повний текст джерела國立清華大學
工程與系統科學系
94
In this thesis, we will separate three parts: first: introduce the growth of single vertically-aligned carbon nanotube (CNT), secondly: field emission measurement and analysis with various shape of single CNT, and finally: the application of scanning probe microscopy and triode structure device with single CNT. First, the vertically aligned CNTs were fabricated by a combination of EBL and ICP-CVD deposition. The positive photoresist of polymethylmehtacrylate (PMMA) 35 nm thickness was coated on a <100> p-type silicon substrate, followed by EBL. The spacing between dots were 1~3 μm apart. The acceleration voltage was 20 KV, and the exposure time was varied between 5 ms and 10 ms to control the size of holes after development.The minimum and average sizes of the nickel dots after lift-off ranged were 30 nm and 60 nm, respectively. Nickel, as the catalyst, was then deposited either by E-gun evaporation or radio frequency sputter, which thickness was about 10 nm. An ICP-CVD system was used to grow vertically aligned CNTs under the following process conditions: ICP power of 1000 W, substrate RF bias of 300 W, feed gas mixture of C2H2/H2/Ar with 8/24/0.5 sccm flow rates, and total pressure of 20 mtorr. The substrate temperature was about 550o C and the growth time was 10 minutes. To separate the field emission characteristics with various shape of CNT, two different types (24 cm and 4cm) of graphite electrodes supporting silicon substrates were used. In additionally, the aspect ratio of CNT is directly proportional to the exposure time of electron beam after using EBL and ICP-CVD. Secondly, we have designed and constructed the three-axis nano-positioning device for carbon nano-tip assembly and FE measurement inside a SEM chamber in order to investigate the field emission characteristics with various shape and aspect ratio of single CNT (Free standing VACNTs of various aspect ratios (height/radius) were explained at first part). This device consists of two parts: inertial walker for x-y-axis and inchworm unit for the z-axis. The x and y stages are independent and actuated with piezoelectric stack respectively. The dimension of the x-y stage is 25 mm × 25 mm. The dimension of the inchworm is 48 mm × 20 mm. Based on the results of experiment, it clearly shows that the lengths and diameters of CNT are varied with the exposure times (the larger the Ni dot size, the large the CNT diameter and the faster the CNT growth rate). It was believed that the increasing growth rate for larger Ni dot size is attributed to the increasing carbon flux around Ni. The large height and small radius of CNT lead to high aspect ratios and thus better enhancement of the electric field at the tip. That means required turn-on electric filed is substantially reduced as the height increases or radius is decreases due to the increased geometrical field enhancement factor. Furthermore, the turn-on field was also showed a result of FE simulation at the apex of the CNT emitter with various aspect ratio by using a commercial code, SIMION 7.0.The SIMION code simulation conditions are: (1) diameter of anode probe of 3 μm,(2) spacing between anode and cathode 200 nm, and (3) anode voltage 24 V. The results were also showed that the maximum field enhancement factor and field strength was related to the aspect ratio. Finally, we have constructed the scanning probe microscopy and triode structure device with single vertically-aligned CNT emitter source by using electron beam lithography and inductively-couple plasma (ICP) chemical vapor deposition. In the scanning probe microscopy measurement part, it was apparent that the silicon pillar array with height 150 nm and length 1.25~1.5 μm have been completely scanning by the single CNT probe. In the triode measurement, the field emission was the synthesized effect of the gate structure; in other words, in addition to the geometric factor of CNTs, the field strength at the CNT apex in triode structure also depends on the gate hole size, position of CNT at gate hole, and the height of CNT tip relative to the gate height (gate-to-cathode spacing). In this study, the gate hole size, gate-to-cathode spacing, and the position of CNT were fixed (i.e. CNT is positioned at gate hole center). Thus the emphasis was on the effect of CNT length and the consequent difference of CNT tip to gate distance. It was evident that the optimized CNT height for highest field at the CNT apex is that equal to the gate-to-cathode spacing. Furthermore, the turn-on field was also showed a result of FE simulation at the apex of the CNT emitter with various CNT heights by using a commercial code, SIMION 7.0. The simulation conditions are: (1) diameter of aperture hole and anode probe of 1.5 μm and 4 μm respectively, (2) applied gate voltage -10 V and anode voltage 0 V, and (3) cathode voltage -27.7 V. The results were also showed that the maximum field strength was related to the CNT length. Based on the above results, it was evident that in the triode measurement, although the difference of field emission is “controlled” by varying the “CNT length”, the difference is not simply due to the aspect ratio, but also due to the difference in distance between CNT tip height and gate height.
Chang, Chia-Hao, and 張家豪. "Evaluation of greenhouse gases emission scenarios of paddy rice field by system dynamic model." Thesis, 2004. http://ndltd.ncl.edu.tw/handle/13686039199123543426.
Повний текст джерела國立雲林科技大學
環境與安全工程系碩士班
94
The greenhouse effect is an important mechanism of maintaining the temperature and ecological system of the Earth. However, many recent researches show that mankind over-using petrochemical fuels and excessively developing land surface have produced the aggravation of greenhouse effect and climate change. Paddy field is a kind of artificial wetlands--flooding rice fields would produce methane by methogentic bacteria under anaerobic conditions in soils. Methane emission from rice paddies is about 10-30 percent of atmospheric methane on the world. Since rice is the major food crop in world as well as Taiwan, methane emission from rice paddy is an important source. This study collected and analyzed past researches on emission factors and data, based and developed system dynamic model through the theory of bacterial energetics, and modeled the system by a software tool STELLA. On the other hand, this study also use the Fourier Transform Infrared method to monitor the emission of GHGs from paddy rice field in the second season of 2004 and in the first season of 2005. The local emission coefficient of paddy rice field was then calculated and compared with the model. The model integrated the influencing factors of methane emission to established a system dynamic model of paddy rice in order to evaluate and analysis emission amount and possible scenarios in the future. These simulation results could be adopted for management strategies and policy for GHG reduction on paddy fields. Based on of reduction trends for cultivation areas from 1990 to 2000, the system dynamic model estimates methane emission of 24.7 Gg (109g = 103 ton ) in 2010. If the average temperature raises 1 or 2℃, methane emission from rice paddy would increase 6.8 and14% due to flooding field. By extending the draining period, methane emission could reduce 20%. In addition, postponing cultivation for half month to one month could help emission reduction by 1.5%-2.3%. Considering the zone management of cease cultivation, the middle region should take priority due to its large temperature effect on methane emission. Because the second crop season emitted more methane than the first one, a 50% overall reduction in planting areas for the second crop season could yield 33% reduction in yearly emission according to our model simulation.
Ivaturi, Sameera. "Electron Filed Emission Studies of Nanostructured Carbon Materials." Thesis, 2012. http://etd.iisc.ac.in/handle/2005/3251.
Повний текст джерелаIvaturi, Sameera. "Electron Filed Emission Studies of Nanostructured Carbon Materials." Thesis, 2012. http://hdl.handle.net/2005/3251.
Повний текст джерелаHuang, Pin-Sang, and 黃品森. "Resistance effect on Field Emission for One-dimensional Nanostructures Grown on Silicon Substrates:A Simulation Study Using Classical Transport Model." Thesis, 2007. http://ndltd.ncl.edu.tw/handle/15018448653138676751.
Повний текст джерела國立成功大學
光電科學與工程研究所
95
The Fowler-Nordheim (F-N) plots of the carbon nanotubes (CNTs) often exhibit a saturation-like phenomenon in the high-voltage region. This phenomenon is attributable to the resistance effect of the CNTs and/ or the interface effect between the substrate and CNTs. Jo et al. established a modified F-N equation to take the resistance effect into account. And their model can fit the experiment data well by adjusting the bulk resistance of the CNTs [52]. In this study, the carrier transport model is applied to investigate the resistance effect of the 1-D nanostructure grown on silicon substrate. The classical transport equation is used to describe the carrier transport in the material and solved together with the Poisson,s equation. The field emission at the emitter-vacuum interface is modeled by the F-N equation. My thesis simulation results exhibit that the F-N plots obtained from the simulation can also be fitted well by Jo,s modified F-N equation. And more importantly, the fitted resistance of the 1-D nanostructure is very close to the calculated resistance from the material mobility used in the simulation. Furthermore, the interface effect can also be considered as a large resistor which is in series with the bulk resistance of the 1-D nanostructure. The effect of carrier,s temperature on carrier,s mobility and resistance in the 1-D nanostructure is also examined.