Статті в журналах: "CMP polishing"

1

Lou, Chun Lan, Hai Yan Di, Qiang Fang, Tao Kong, Wei Feng Yao, and Zhao Zhong Zhou. "Study on Groove Shape of CMP Polishing Pad: A Review." Advanced Materials Research 497 (April 2012): 278–83. http://dx.doi.org/10.4028/www.scientific.net/amr.497.278.

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In the chemical mechanical polishing process (CMP) ，the groove shape of polishing pad is one of the most critical elements that directly influences the quality and efficiency of CMP. This review paper describes the basic patterns of groove shape and that the patterns shape of polishing pad how to effect on quality and efficiency of CMP. The effect comparison between various sorts of groove shape and their effects on polishing is described. It is intended to help reader to gain a more comprehensive view on groove shape of polishing pad, and to be instrumental for research and development new groove shape of polishing pad for CMP.

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2

Liu, Zhi Xiang, Jian Guo Yao, Song Zhan Fan, and Jian Xiu Su. "Study on the Preparation Technology of Fixed Abrasive Polishing Pad in Chemical Mechanical Polishing." Applied Mechanics and Materials 602-605 (August 2014): 485–88. http://dx.doi.org/10.4028/www.scientific.net/amm.602-605.485.

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According to the shortcomings of the traditional free abrasive chemical mechanical polishing (CMP), in recent years, the fixed abrasive chemical mechanical polishing (FA-CMP) technology is proposed. It is a new planarization technology developed on the basis of the traditional CMP. Pad is an important and dispensable part in FA-CMP. The cost and quality of FA-CMP pad are determined by the preparation technology. In order to study the FA-CMP pad of the low cost and high quality, in this paper, by reading a lot of literature, 5 kinds of preparation technology of FA-CMP pad are analyzed. Study results will provide some reference for further designing and manufacturing the FA-CMP pad.

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3

Tso, Pei Lum, Shi Guo Liu, and J. C. Wang. "The Development of an Ultrasonic Head for CMP Pad Conditioning." Advanced Materials Research 500 (April 2012): 275–80. http://dx.doi.org/10.4028/www.scientific.net/amr.500.275.

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The technology of ultrasonic assisted machining has been successfully used in many machining processes recently. Conditioning in the CMP not only can extending the life of the polishing pad but also improve process stability. In this paper we develop a brand new conditioning process with ultrasonic assisted conditioning UAC head for chemical mechanical polishing CMP process. The slurry came from inside the polishing spindle and had an independent cyclic system. As a result, this UAC device can remove polishing debris 4-6 times faster than conventional conditioning process. This conditioning process may even use water instead of slurry to reduce the cost of consumables of CMP. Key word: Chemical mechanical polishing CMP, Ultrasonic assisted conditioning UAC, Polishing Pad

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4

Son, Jungyu, and Hyunseop Lee. "Preliminary Study on Polishing SLA 3D-Printed ABS-Like Resins for Surface Roughness and Glossiness Reduction." Micromachines 11, no. 9 (September 8, 2020): 843. http://dx.doi.org/10.3390/mi11090843.

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After the development of 3D printing, the post-processing of the 3D-printed materials has been continuously studied, and with the recent expansion of the application of 3D printing, interest in it is increasing. Among various surface-machining processes, chemical mechanical polishing (CMP) is a technology that can effectively provide a fine surface via chemical reactions and mechanical material removal. In this study, two polishing methods were evaluated for the reduction of surface roughness and glossiness of a stereolithography apparatus (SLA) 3D-printed ABS (acrylonitrile butadiene styrene)-like resin. Experiments were conducted on the application of CMP directly to the 3D-printed ABS-like resin (one-step polishing), and on the application of sanding (#2000) and CMP sequentially (two-step polishing). The one-step polishing experiments showed that it took a considerable period of time to remove waviness on the surface of the as-3D printed specimen using CMP. However, in the case of two-step polishing, surface roughness was reduced, and glossiness was increased faster than in the case of one-step polishing via sanding and CMP. Consequently, the experimental results show that the two-step polishing method reduced roughness more efficiently than the one-step polishing method.

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5

Zhang, Hui, Zi Feng Ni, and Qing Zhong Li. "A Fine Atomization CMP Slurry for Copper." Advanced Materials Research 279 (July 2011): 271–74. http://dx.doi.org/10.4028/www.scientific.net/amr.279.271.

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In this paper, a kind of alkaline slurry was introduced, in which silica was used as the abrasive, H2O2 was used as the oxidize, glycine was used as the complexing agent, azimidobenzene was used as the surfactant, and borax was used as the pH regulator. The atomization polishing method was used, and the effects of the traditional polishing and atomization polishing were compared. After the atomization polishing, the surface roughness of copper was 7.61 nm and the material removal rate was 188 nm/min; After the traditional polishing, the surface roughness was 15.22 nm and the material removal rate was 236 nm/min. The dosage of polishing slurry used in the atomization polishing is dozens of times less than that in the traditional polishing.

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6

Zhang, Sheng Fang, Jian Xiu Su, Jia Xi Du, and Ren Ke Kang. "Analysis on Contact Forms of Interface in Wafer CMP Based on Lubricating Behavior." Materials Science Forum 704-705 (December 2011): 313–17. http://dx.doi.org/10.4028/www.scientific.net/msf.704-705.313.

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Chemical mechanical polishing (CMP) has become the most widely used planarization technology in the semiconductor manufacturing process. In this paper, the distinguish method of lubricating behavior in wafer CMP had been analyzed in theory firstly. Then, the tests of wafer CMP with silicon wafer and deposited copper wafer at different polishing pressure had been done. By the test results, the Stribeck curves obtained showed obvious smooth. But in normal wafer CMP conditions, the friction coefficient of polishing area was above 0.1. By analyzing the experimental results, it was concluded that the lubrication state in CMP interface is belong to the boundary lubrication and the material removal is the process of bringing and removed of the chemical reaction boundary lubricating film on wafer surface constantly. The contact form between the Wafer and the polishing pad is the solid-solid contact. These results will provide theoretical guide to further understand the material removal mechanism of in wafer CMP. Keywords: Chemical mechanical polishing, material removal mechanism, lubrication form, boundary lubrication.

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7

Sugimoto, Taku, Seiichi Suda, and Koichi Kawahara. "Change in Slurry/Glass Interfacial Resistance by Chemical Mechanical Polishing." MRS Advances 2, no. 41 (2017): 2205–10. http://dx.doi.org/10.1557/adv.2017.335.

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ABSTRACTThe use of ceria abrasives in the chemical mechanical polishing (CMP) of glass allows us to prepare extremely smooth surfaces because it aides both the chemical and mechanical aspects of the polishing process. The mechanism of CMP has remained vague, but the redox of Ce4+/Ce3+ would play a major role for the formation of hydration layer by the chemical factors of CMP. This redox accompanies the process of the charge transfer at glass/slurry interface. Electron charge carrier would be important role in chemical polishing if the redox reaction occurs during polishing. We then prepared the polishing model that it is possible to estimate slurry resistivity and the interfacial area specific resistance (ASR). The effects of abrasive compositions and slurry solution on chemical factor of CMP were investigated to clarify CMP mechanism. The hydration layer forms as a result of the shear stress during polishing but is independent of polishing loads. The amount of hydration layer as well as removal rate was increasing with increasing lanthanum concentration dissolved in ceria lattice. Small amount addition of NH4NO3 increase electron charge carrier density in slurry and improves removal rate, but excess addition inhibited hydration reaction by steric hindrance.

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8

Fang, Treliant, Ping Chung Chen, and Ming Hsun Lee. "A New Permanganate-Free Slurry for GaN-SiC CMP Applications." Materials Science Forum 1004 (July 2020): 199–205. http://dx.doi.org/10.4028/www.scientific.net/msf.1004.199.

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Single crystal SiC wafers are known to be extremely difficult to polish by conventional CMP slurries because of their high hardness and chemical resistance. Previously only those manganese-containing CMP slurries are capable of producing measurable and useful polishing rates with this versatile wide band-gap substrate. A new permanganate-free SiC polishing slurry containing a generic formula of MXO2 etchant, where M is an alkali metal, X is a halogen, O is oxygen is disclosed. When mixed with an abrasive powder in an aqueous slurry form, the tribochemical reactant that activates under pressure, etches SiC effectively, rendering an enhanced Material Removal Rate (MRR) when processing CMP SiC wafers. The MRR can sometimes go up to a few order of magnitudes, as compared to the abrasive slurry without these chemical etchants. The series of MXO2 compounds that can activate SiC polishing belong to the chemical family of halites. Sodium chlorite, NaClO2, the simplest and most available member of the halites family, is a good example. The accelerated polishing rates offer increased throughput of the slow SiC CMP process. The new slurry is particularly useful for non-oxide wafer polishing, which includes SiC, GaN and AlN wafers. An outstanding character of the new halite-based polishing formulation that is different from the current permanganate-based slurries is that the waste stream produced from the CMP process can be easily treated in the waste water treatment facilities because they do not contain toxic heavy metal ions such as manganese and permanganate in the polishing formulations. Continuous exhaustive CMP polishing test with 32 4” 4H-N SiC wafers using a production CMP tool containing 32L of the alumina-chlorite slurry has demonstrated an MRR of 1.7um/hr (Si-face) when the slurry is fresh, and a final MRR of 1.0um/hr after 16 hours polishing at 800mL/min slurry flow rate with pH buffer control without fresh oxidant addition. The resulting 32 polished 4H-SiC test wafers show overall excellent smooth surface roughness with the best Ra of 0.05nm by AFM after fine CMP polishing.

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9

Guo, Zhi Xue, Jing Zhai, Hui Zhang, and Qing Zhong Li. "The Effect of Speed Matching on the CMP Uniformity." Advanced Materials Research 189-193 (February 2011): 4154–57. http://dx.doi.org/10.4028/www.scientific.net/amr.189-193.4154.

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In the chemical mechanical polishing process, the relationship of relative motion of polishing pad and polishing head plays very important role for CMP quality. This paper established the mathematical model in order to investigate the relative motion of polishing pad and polishing head. It was found that the speed ratio of polishing pad and polishing head shows great influence on the CMP uniformity. And when the value of speed ratio of relative rotation approaches 1.23, the distribution of abrasives’ trajectories is close and uniform. Theoretically, the surface quality of workpiece is better.

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10

Zhang, Zhu Qing, and Kang Lin Xing. "Study on 6H-SiC Crystal Substrate (0001) C Surface in FA-CMP Based on Diamond Particle." Applied Mechanics and Materials 727-728 (January 2015): 244–47. http://dx.doi.org/10.4028/www.scientific.net/amm.727-728.244.

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Through experimental study on the role of the free abrasive in chemical mechanical polishing, in this paper, four different types of abrasive which were chosen were used for the research of material removal rate(MRR) and surface quality of SiC single crystal . Finally ,Diamond abrasive which is considered was the most suitable for chemical mechanical polishing(CMP) abrasive of SiC Crystal Substrate. With diamond Particle polish pad polishing, it is draw a comparison result on the influence of the free abrasive and consolidation abrasive for the material removal rate and surface quality of 6H-SiC. The results showed that: the MRR is 140nm / min, the material removal rate if fixed abrasive chemical mechanical polishing(FA-CMP) more than three times that of traditional CMP, fixed abrasive chemical mechanical polishing pad, are involved in a large proportion of micro abrasive cutting, can greatly improve the material removal efficiency. And results from the test procedure, the FA-CMP surface has scratches after more technical problems for the polishing pad, the surface damage is relatively free of abrasive chemical mechanical polishing is more serious.

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11

Su, J. X., Jia Xi Du, X. L. Liu, H. N. Liu, and R. K. Kang. "Study on Lubricating Behavior in Chemical Mechanical Polishing." Key Engineering Materials 487 (July 2011): 243–47. http://dx.doi.org/10.4028/www.scientific.net/kem.487.243.

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Chemical mechanical polishing (CMP) has become the most widely used planarization technology in the metal and hard-brittle crystal substrate manufacturing process. In this paper, the distinguish method of lubricating behavior in CMP had been analyzed in theory firstly. Then, the tests of CMP with silicon wafer and deposited copper wafer at different polishing pressure had been done. By the test results, the Stribeck curves obtained showed obvious smooth. But in normal CMP conditions, the friction coefficient of polishing area was above 0.1. By analyzing the experimental results, it was concluded that the lubrication state in CMP interface is belong to the boundary lubrication and the material removal is the process of bringing and removed of the chemical reaction boundary lubricating film on hard-brittle crystal substrate surface constantly. The contact form between the workpiece and the polishing pad is the solid-solid contact. These results will provide theoretical guide to further understand the material removal mechanism of in hard-brittle crystal substrate CMP.

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12

Tso, Pei Lum, and Yang Liang Pai. "Amorphous Diamond Dresser for CMP Fixed Abrasives Pad." Key Engineering Materials 329 (January 2007): 157–62. http://dx.doi.org/10.4028/www.scientific.net/kem.329.157.

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The primary consumables in chemical mechanical polishing (CMP) are the polishing pad and slurry. The polishing pad significantly influences the stability of the polishing process and the cost of consumables (CoC). Usually a diamond pad conditioner is used to scrap off the polishing debris from the pad top. Recently, an alternative planarization process can be achieved by polishing with a "fixed abrasive pad" (FAP). In order to dress bumps on FAP, this paper use an amorphous diamond, a diamond-like carbon deposited by cathode arc system as the dresser for FAP. The amorphous diamond can produce a surface relief that ranges from a few nanometers to about 200 nanometers. With the addition of this dressing step on a rotary platform, FAP can renew its polishing surface 10 to 100 times before the bumps are used up. The pad cost for polishing can be reduced by at least ten folds and make FAP more desirable than slurry pad for silicon wafer manufacturer due to its intrinsic capabilities to produce flatter wafers with high polishing rate.

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13

Ha, Taeho, Keiichi Kimura, Takashi Miyoshi, and Yasuhiro Takaya. "Laser-Assisted CMP for Copper Wafer." Materials Science Forum 502 (December 2005): 351–60. http://dx.doi.org/10.4028/www.scientific.net/msf.502.351.

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This paper presents a laser-assisted Cu-CMP (Chemical Mechanical Polishing) method for obtaining higher planarized surface by forming laser aggregation particles on recessed areas of uneven copper surface before polishing. At first, the laser trapping of fine particles in slurry and the formation of aggregated marks on the copper wafer surface were investigated by fundamental experiments based on optical radiation pressure. Next, proposed planarization method for uneven surface of copper wafer was attempted. As the polishing processed, the height of aggregated marks was reduced. Then, it was confirmed that the aggregated marks played a role of masks, and no material removal at the bottom surface of recessed areas took place during polishing. This process made it possible to realize high planarity on copper wafer surface.

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14

Kim, Seong-In, Gi-Ppeum Jeong, Seung-Jae Lee, Jong-Chan Lee, Jun-Myeong Lee, Jin-Hyung Park, Jae-Young Bae, and Jea-Gun Park. "Scavenger with Protonated Phosphite Ions for Incredible Nanoscale ZrO2-Abrasive Dispersant Stability Enhancement and Related Tungsten-Film Surface Chemical–Mechanical Planarization." Nanomaterials 11, no. 12 (December 4, 2021): 3296. http://dx.doi.org/10.3390/nano11123296.

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For scaling-down advanced nanoscale semiconductor devices, tungsten (W)-film surface chemical mechanical planarization (CMP) has rapidly evolved to increase the W-film surface polishing rate via Fenton-reaction acceleration and enhance nanoscale-abrasive (i.e., ZrO2) dispersant stability in the CMP slurry by adding a scavenger to suppress the Fenton reaction. To enhance the ZrO2 abrasive dispersant stability, a scavenger with protonate-phosphite ions was designed to suppress the time-dependent Fenton reaction. The ZrO2 abrasive dispersant stability (i.e., lower H2O2 decomposition rate and longer H2O2 pot lifetime) linearly and significantly increased with scavenger concentration. However, the corrosion magnitude on the W-film surface during CMP increased significantly with scavenger concentration. By adding a scavenger to the CMP slurry, the radical amount reduction via Fenton-reaction suppression in the CMP slurry and the corrosion enhancement on the W-film surface during CMP performed that the W-film surface polishing rate decreased linearly and notably with increasing scavenger concentration via a chemical-dominant CMP mechanism. Otherwise, the SiO2-film surface polishing rate peaked at a specific scavenger concentration via a chemical and mechanical-dominant CMP mechanism. The addition of a corrosion inhibitor with a protonate-amine functional group to the W-film surface CMP slurry completely suppressed the corrosion generation on the W-film surface during CMP without a decrease in the W- and SiO2-film surface polishing rate.

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15

Sharma, Mohit, and Chao-Chang A. Chen. "Analytical Modelling of Material Removal in Copper Chemical Mechanical Polishing Incorporating the Scratch Hardness of the Passivated Layer on Copper Thin Film Wafer." ECS Journal of Solid State Science and Technology 11, no. 4 (April 1, 2022): 044007. http://dx.doi.org/10.1149/2162-8777/ac6624.

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Chemical mechanical polishing (CMP) is the most crucial process for semiconductor fabrication and the scale of its application is broadening year by year. And understanding the varied mechanical interaction at pad-wafer contact as well as chemical alteration of the wafer surface is essential to comprehend the mechanism of material removal in the CMP process. In this study, an analytical material removal model is established as a function of polishing pad properties and scratch hardness of copper thin film wafer in CMP slurry environment. The model incorporates both, the mechanical material wear of chemically altered surface and, the chemical dissolution of copper based on corrosion theory. The contact between the polishing pad, wafer and abrasive is analysed and, in addition, the effect of the polishing pad and wafer properties on material removal is simulated. The model predicted MRR is compared to the copper CMP experiment MRR. This study establishes a strong correlation between the experimentally measured polishing pad and wafer properties and the material removal within the nanoscale contact model assumptions. The model provides a theoretical and experimental framework for optimizing the CMP process parameters, which can be employed to develop a simulator to analyze the advanced node copper CMP process

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16

Wen, Yan Wu, Xin Chun Lu, Hui Zhang, Kai Zhou, and Pei Qing Ye. "Identification Research on CMP Multi-Zones Pressure System." Advanced Materials Research 605-607 (December 2012): 1074–79. http://dx.doi.org/10.4028/www.scientific.net/amr.605-607.1074.

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In the process of very large scale integrated circuit (VLSI) manufacturing, Chemical Mechanical Polishing (CMP) technique is one of the most effective wafer global planarization techniques. The polishing quality depends not only on the slurry and polishing head structure, but also on accurately wafer polishing pressure control. However, the polishing pressure accurately control depends on a generalized pressure control system of the polishing head and multi-zones pneumatic pressure system. As the system has time-varying, nonlinear and coupling characters, it is difficult to apply theoretical modeling method for obtaining the accurate mathematical model. Therefore, this paper presents a method based on subsubmodel identification to establish the precise mathematical model of the pressure control system. The experimental results show that the method is feasible, practical and accurate.

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17

Jia, Ying Qian, Xin Huan Niu, Li Li, and Ning Li. "The Study of Stability of Tungsten Plug CMP Slurry for IC Multilevel Interconnect." Advanced Materials Research 834-836 (October 2013): 658–61. http://dx.doi.org/10.4028/www.scientific.net/amr.834-836.658.

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With the developing of integrated circuit(IC) technique, improving of integration level, reducing of feature size and increasing the wafer size, the stringent requirements for global planarization during IC fabrication are raised. During chemical mechanical polishing(CMP) of multilevel interconnect for IC, there are obvious influence of the polishing quality on performances of the device．CMP slurry is one of the important factors of influencing the polishing quality. In this work, the stability of tungsten plug CMP slurry for IC multilevel interconnect was studied. Through experiment, interaction between the components in the CMP slurry was analyzed, and stable slurry with optimized polishing parameters to achieve higher removal rate were defined．

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18

Yuan, Ze Wei, Zhu Ji Jin, B. X. Dong, and Ren Ke Kang. "Polishing of Free-Standing CVD Diamond Films by the Combination of EDM and CMP." Advanced Materials Research 53-54 (July 2008): 111–18. http://dx.doi.org/10.4028/www.scientific.net/amr.53-54.111.

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Although various diamond polishing techniques have been studied for many years, no individual method can polish free-standing CVD diamond film with high efficiency and high polishing quality. This paper investigates polishing CVD diamond film by the combination of electro-discharge machining (EDM) and chemical mechanical polishing (CMP). Scanning electro microscopy, Optical microscopy, Energy dispersive X-ray analysis, Talysurf surface profiler and Raman spectroscopy were used to evaluate the surface integrity and quality of diamond film before and after polishing. Based on the experimental results, the material removal during EDM process can be a chemo-mechanical process, including gasification, melting, sputtering, oxidation and graphitization. While in CMP process, diamond was removed under the mechanical and tribochemical interaction. The combination of EDM and CMP has advantages of high efficiency, high polishing quality and low damage. It is suitable to polish large area free-standing CVD diamond film.

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19

Su, Jian Xiu, Zhu Qing Zhang, Jian Guo Yao, Li Jie Ma, and Qi Gao Feng. "Study on Chemical Mechanical Polishing Parameters of 6H-SiC Crystal Substrate Based on Diamond Abrasive." Advanced Materials Research 797 (September 2013): 261–65. http://dx.doi.org/10.4028/www.scientific.net/amr.797.261.

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In this paper, according to the slurry ingredients obtained by former research, the influences of the chemical mechanical polishing (CMP) process parameters, such as the rotational velocity of the platen and the carrier, the polishing pressure and the abrasive size on the material removal rate (MRR) and surface roughness Ra have been studied in CMP SiC crystal substrate (0001) C and (0001) Si surface based on the diamond abrasive. The research results show that the material removal rate changes with the change of the abrasive size, the rotational velocity of the platen and the polishing pressure significantly, but the maximum of MRR can be obtained at a certain rotational velocity of platen, abrasive size and polishing pressure. The influence of the abrasive size, the platen velocity, the carrier velocity and the polishing pressure on surface roughness is no significant. Under the same conditions, the MRR of CMP the Si surface is larger than that of the C surface. This study results will provide the reference for optimizing the process parameters and researching the material removal mechanism in CMP SiC crystal substrate.

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20

Uneda, Michio, Keiichi Takano, Koji Koyama, Hideo Aida, and Ken-ichi Ishikawa. "Investigation into Chemical Mechanical Polishing Mechanism of Hard-to-Process Materials Using a Commercially Available Single-Sided Polisher." International Journal of Automation Technology 9, no. 5 (September 5, 2015): 573–79. http://dx.doi.org/10.20965/ijat.2015.p0573.

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Chemical mechanical polishing (CMP) is one of the most important processes for fabricating highly planarized substrates such as sapphire for light emitting diodes (LEDs). However, sapphire is categorized as a hard-to-process material; therefore, a long processing time is required because of the low polishing efficiency (i.e., removal rate). This study investigates the CMP mechanism for hard-to-process materials using the following polishing evaluation parameters: (1) the velocity ratio, which is defined as the ratio of slurry flow velocity between the wafer and polishing pad during CMP to the pad tangential velocity, (2) the standard deviation of the velocity ratio distribution, and (3) the polisher vibration acceleration during CMP. Each parameter was measured at five rotational speeds and two polishing pressures for a total of ten conditions using a commercially available single-sided polisher. Moreover, the influence of each parameter on the removal rate was demonstrated via a multiple correlation analysis. As a result, we revealed that the velocity ratio and polisher vibration acceleration are strongly related with the removal rate.

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Sato, Ryunosuke, Yoshio Ichida, Yoshitaka Morimoto, and Kenji Shimizu. "Polishing Characteristics of CMP for Oxygen Free Copper with Manganese Oxide Abrasives." Key Engineering Materials 389-390 (September 2008): 515–20. http://dx.doi.org/10.4028/www.scientific.net/kem.389-390.515.

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A series of polishing experiments have been carried out using Mn2O3 as abrasive grains to examine the polishing characteristics of CMP for oxygen-free copper. It has been found that the polishing rate increases as the polishing speed and/or polishing pressure increases, also the role of polishing speed on the polishing rate is more significant than that of the polishing pressure. The effects of the polishing conditions are however small, when polishing a finished surface roughness of about Ra 5 nm. A long polishing time, with an approximately constant polishing rate, can be achieved, without dressing, with a polishing pressure P = 9.4 kPa. It was found that higher polishing pressures could achieve a higher polishing rate, however the polishing pressure would decrease as the polishing time increased.

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22

Li, Wei, Ming Ming Ma, and Bin Hu. "A Study on Surface Quality of GaN with CMP Polishing Process." Advanced Materials Research 291-294 (July 2011): 1764–67. http://dx.doi.org/10.4028/www.scientific.net/amr.291-294.1764.

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This paper introduced a polishing process for planarization of gallium nitride (GaN) wafer by polishing slurry that is made up by the chemical reaction with H2O2 solution and iron. Some different polishing parameters in the polishing process has been analyzed, which affect the surface quality of wafers, such as slurry particle size, polishing times, polishing slurry etc., and trying to improve the polishing process by optimization of the polishing parameters. The experimental result showed that this polishing method has an effect on the surface quality of GaN wafers, finally, the efficient and precision machining with surface roughness of GaN wafers of Ra0.81 nm has been gained by the CMP polishing process.

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23

Su, Jian Xiu, Yan An Peng, Zhen Hui Liu, Zhan Kui Wang, and Su Fang Fu. "Analysis on the Action of Oxidant in Chemical Mechanical Polishing of 304 Ultra-Thin Stainless Steel." Materials Science Forum 893 (March 2017): 234–39. http://dx.doi.org/10.4028/www.scientific.net/msf.893.234.

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The ultra-thin stainless steel sheet will be used in flexible displays for substrate material. The application of the substrate requires its surface very smooth, no defects and damage free. Chemical mechanical polishing (CMP) has been considered as a practical and irreplaceable planarization technology in the ultra precision machining of the flexible display substrate. In chemical mechanical polishing of ultra-thin stainless steel, the oxidant of polishing slurry has an important influence on the material removal rate (MRR). In this paper, the influences of oxidant in slurry on MRR and surface roughness had been studied in CMP of ultra-thin 304 stainless steel based on alumina (Al2O3) abrasive. The research results show that the oxidant of the hydrogen peroxide and the oxalic acid have the interaction in CMP 304 stainless steel and when using the only one oxidant in polishing slurry, the hydrogen peroxide or oxalic acid, the MRR is less than the maximum. The oxalic acid can provide a strong acidic environment to ensure the stability of the hydrogen peroxide in polishing slurry and to improve the MRR in CMP 304 stainless steel. The research results can provide the reference for studying the slurry in CMP of ultra-thin stainless steel.

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24

Doy, Toshiroh Karaki. "Polishing Technique and CMP (Chemical & Mechanical Polishing) in Semiconductor Process." Journal of the Society of Mechanical Engineers 103, no. 979 (2000): 372–74. http://dx.doi.org/10.1299/jsmemag.103.979_372.

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25

Tso, Pei Lum, Zhe Hao Huang, Sheng Wei Chou, and Cheng Yi Shih. "Study on the CMP Pad Life with its Mechanical Properties." Key Engineering Materials 389-390 (September 2008): 481–86. http://dx.doi.org/10.4028/www.scientific.net/kem.389-390.481.

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The primary consumables in chemical mechanical polishing (CMP) are the polishing pad and the slurry. The polishing pad significantly influences the stability of the polishing process and the cost of consumables (CoC). During the polishing process, a diamond dresser must be frequently employed to remove the debris to prevent accumulation, a process known as pad conditioning. In this paper, we investigated the physical properties of the CMP pad such as compressibility, thickness, and surface roughness. The difference between new and used pads has been studied. Conclusively, conditioning via a diamond dresser will extend pad life and reduce CoC.

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Su, Jian Xiu, Xi Qu Chen, Jia Xi Du, Xiu Ying Wan, and Xin Ning. "Study on Characteristic of Abrasives in Chemical Mechanical Polishing of Silicon Wafer." Advanced Materials Research 102-104 (March 2010): 658–62. http://dx.doi.org/10.4028/www.scientific.net/amr.102-104.658.

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Анотація:

In order to understand the material removal mechanism in the process of chemical mechanical polishing (CMP), the states of abrasives in the slurry and on the polishing pad in CMP process have been studied by testing. It was concluded that although the abrasive in the slurry is in the form of agglomeration, but the abrasive on the polishing pad are in approximately uniform layer distribution. The different CMP slurries had been designed for CMP test of MRR. According to analyzing the test results, it was concluded that the mechanical action produced by the abrasive is the main mechanical action in wafer CMP process and the MRR mainly results from the interaction between the mechanical action of the abrasives and the chemical action of slurry. These results will provide a reliable basis for the building of abrasive trajectory model and a theoretical guide to further understanding the material removal mechanism in wafer CMP.

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27

Grim, J. R., Marek Skowronski, W. J. Everson, and V. D. Heydemann. "Selectivity and Residual Damage of Colloidal Silica Chemi-Mechanical Polishing of Silicon Carbide." Materials Science Forum 527-529 (October 2006): 1095–98. http://dx.doi.org/10.4028/www.scientific.net/msf.527-529.1095.

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The selectivity, material removal rate, and the residual subsurface damage of colloidal silica (CS) chemi-mechanical polishing (CMP) of silicon carbide substrates was investigated using atomic force microscopy (AFM) and plan view transmission electron microscopy (TEM). Silica CMP, in most process conditions, was selective. In the damage region surrounding remnant scratches, the vertical material removal rate exceeded the planar material removal rate, which resulted in an enhancement of the scratches over the duration of the polishing process. The material removal rate was low, about 20 nm / hr. In addition, the selectivity leads to a slow removal of residual subsurface damage from mechanical polishing. The silica CMP polished surface exhibits significant subsurface damage observed by plan view TEM even after prolonged polishing of 16 hours.

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28

Evans, David. "The Future of CMP." MRS Bulletin 27, no. 10 (October 2002): 779–83. http://dx.doi.org/10.1557/mrs2002.250.

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AbstractChemical–mechanical polishing, or planarization (CMP), is one of several advanced microfabrication processes that provide complementary capabilities for constructing advanced electronic devices. At the current state of the art, CMP demonstrates significant advantages due to its high degree of process flexibility, particularly in the chemical formulation of polishing solutions and slurries. This article explores some possible future applications of CMP using new advanced materials other than silicon, silicon oxide, and silicon nitride. Such materials may include refractory and noble metals, high-κ insulators, and mixed metal oxide perovskites. Although no one can predict future applications with absolute certainty, it seems safe to conclude that CMP will remain a key microfabrication technology for the foreseeable future.

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29

Liu, Xiao Peng, Xiao Chun Chen, and Qing Zhong Li. "Principle and Experiment of Ultrasonic Subtle Atomization in CMP." Advanced Materials Research 279 (July 2011): 287–90. http://dx.doi.org/10.4028/www.scientific.net/amr.279.287.

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The method of chemical mechanical polishing (CMP) using slurry which was ultrasonic subtle atomized was researched, and the system of Ultrasonic Subtle Atomization—Chemical Mechanical Polishing was established. The effects of polish parameters on polishing were also investigated. The results show that the experimental system can fully realize the expected function of polishing, the use of slurry is about one-tenth of the amount of traditional CMP, material removal rate can reach 113.734nm/min and the surface roughness is similar to the surface roughness in the traditional way.

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30

Pipat, PHAISALPANUMAS, Keiichi KIMURA, Keisuke SUZUKI, and KHAJORNRUNGRUANG Panart. "608 Study on Variable Rotation Polishing in CMP Process." Proceedings of Conference of Kyushu Branch 2012.65 (2012): 207–8. http://dx.doi.org/10.1299/jsmekyushu.2012.65.207.

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31

Yang, Wei Ping, Yong Bo Wu, and Hong Fei Yang. "Mechanism and Experimental Investigation on Silicon Wafer Hybrid Polishing by Ultrasonic-Elliptic-Vibration Chemical-Mechanical." Advanced Materials Research 314-316 (August 2011): 829–36. http://dx.doi.org/10.4028/www.scientific.net/amr.314-316.829.

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Considering the technical status and existing problems of traditional silicon wafer chemical mechanical polishing (CMP), especially for the diameter of silicon wafer increasing, constantly, the surface quality and efficiency of silicon wafer polishing are becoming an urgent problem to be solved, so the research subject of ultrasonic vibration hybrid polishing new technique was proposed. By means of mechanism theoretical analysis research, firstly, the processing mechanism of hybrid polishing was studied systematically. An investigation of polishing mechanisms based on the micro-contact model between the polishing pad and the polishing surface of silicon wafer was developed. Polishing mechanism theoretical analysis shows that when ultrasonic vibrations combined with mechanical and chemical, the performance of polishing slurry is improved in the process of CMP, therefore to create favorable conditions. To verify the established theory, then, a series of experiments to investigate the traditional CMP are conducted, as well as the polishing tool with the forms of ultrasonic vibration, the polishing pad, the polishing surface quality, velocity at polishing point v, and slurry supplying Q on silicon wafer polishing. Experiment findings showed that, in the same polishing conditions, especially, hybrid polishing by ultrasonic-elliptic-vibration has gained more advantage over the effect of silicon wafer polishing. When ultrasonic-elliptic-vibration is put in polishing tool, the silicon wafer polished surface roughness Ra from the traditional method of polishing 0.077μm going down to the 0.042μm, the no-smooth rate KR which describes the polished surface morphology is significantly improved, and the material removal rate increases by 18%. Experimental research findings of the surface quality and the material removal mechanism are shown to be consistent with the theoretical analysis.

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32

Wang, Yong Guang, and Liang Chi Zhang. "A Review on the CMP of SiC and Sapphire Wafers." Advanced Materials Research 126-128 (August 2010): 429–34. http://dx.doi.org/10.4028/www.scientific.net/amr.126-128.429.

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Chemo-mechanical polishing (CMP) has been a useful method to produce superior brittle wafer surfaces. This paper reviews the CMP of silicon carbide and sapphire wafers, focusing on efficiency of the polishing rate. The effects of slurry type, slurry pH value and mixed abrasives will be discussed in detail.

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33

Wang, Sheng Li, Y. J. Yuan, Yu Ling Liu, and X. H. Niu. "Study on Chemical Mechanical Polishing Technology of Copper." Key Engineering Materials 373-374 (March 2008): 820–23. http://dx.doi.org/10.4028/www.scientific.net/kem.373-374.820.

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Chemical mechanical polishing (CMP) of copper films in alkaline slurries was investigated. In the copper CMP, the slurry was made by adding colloidal silica abrasive to de-ionized water.The organic alkali was added to adjust the pH, H2O2 was used as an oxidizer.The effects of varying polishing temperature, polishing pressure, slurry flow rate, organic alkali concentration and oxidizer concentration on removal rate were investigated in order to determine the optimum conditions for those parameters. It is shown the chemical composition of the slurry was 2%~3% oxidizer concentration, 3% organic alkali concentration and proper amount surfactant is reasonable. The solid concentration of the polishing slurry was fixed at 20% by weight. The removal rate of copper could reach 700nm/min and the surface roughness after CMP was 0.49nm.

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34

Zhang, Ke Hua, and Dong Hui Wen. "An Effect Contrast for Chemical Mechanical Polishing with Mechanical Polishing for Tungsten Steel." Advanced Materials Research 69-70 (May 2009): 98–102. http://dx.doi.org/10.4028/www.scientific.net/amr.69-70.98.

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The interaction between the tungsten steel surface and the polishing fluid & abrasive were discussed by AFM, SEM and XRD test in order to compare the chemical performances and mechanical action of the tungsten steel polishing in the paper. The chemical mechanical polishing (CMP) and the mechanical polishing (MP) was employed, respectively. The experiments results indicated that the CMP with a higher the materials removal ratio than by MP. Because a chemical corrosion effect implies that slurries with the highest removal rate have high dissolution rate, and have a lower the residual stress, however the surface took on wrinkling.

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35

Wang, Zhan Kui, Ming Hua Pang, Jian Xiu Su, and Jian Guo Yao. "Effect of Different Abrasives on Chemical Mechanical Polishing for Magnesia Alumina Spinel." Key Engineering Materials 866 (October 2020): 115–24. http://dx.doi.org/10.4028/www.scientific.net/kem.866.115.

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In this paper, a series of chemical mechanical polishing (CMP) experiments for magnesia alumina (Mg-Al) spinel were carried out with different abrasives, and the materials removal rate (MRR) and surface quality was evaluated to explore their different effects. The scanning electron microscope (SEM) and laser particle size analyzer were also employed to test the micro-shape and size distribution of abrasives. Then, the mechanism of different effects with different abrasives was analyzed in CMP for Mg-Al spinel. Those experimental results suggest that different subjecting pressure ratios of abrasives to polishing pad with different abrasive are the key factors leading to difference polishing performances in CMP.

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36

Wan, Lin Lin, Zhao Hui Deng, Sheng Chao Li, and Piao Long. "Experimental Study of Material Removal Rate for Rotary Curved Surface Workpieces of Si₃N₄ in Chemical-Mechanical Polishing Using Taguchi Technique." Advanced Materials Research 497 (April 2012): 273–77. http://dx.doi.org/10.4028/www.scientific.net/amr.497.273.

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By applying chemical-mechanical polishing (CMP) technique to high precision processing of rotary surface workpieces of silicon nitride (Si3N4) ceramic, a CMP experimental device was established on a numerical control (NC) jig grinder. The polyurethane wheel and nonwoven cloth wheel was adoped. The CeO2abrasive was applied to configure the water base polishing solution. Using Taguchi robust design method, through S/N ratios and analysis of variance, the influence of slurry concentration, polishing wheel speed and polishing wheel feed rate on material removal rate (MRR) were analyzed. With the increase of polishing wheel speed and polishing wheel feed rate, the MRR decreased. There was a balance concentration leading to the largest MRR. The best process parameters were selected: the slurry concentration of 20%, polishing wheel speed of 6000r/min, polishing wheel feed rate of 2.29mm/min, The result showed the descending order of selected process parameters impacting on MRR was polishing wheel speed, polishing wheel feed rate and slurry concentration.

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37

Lv, Y. S., Nan Li, Jun Wang, Tian Zhang, Min Duan, and Xue Ling Xing. "Analysis on the Contact Pressure Distribution of Chemical Mechanical Polishing by the Bionic Polishing Pad with Phyllotactic Pattern." Advanced Materials Research 215 (March 2011): 217–22. http://dx.doi.org/10.4028/www.scientific.net/amr.215.217.

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In order to make the contact pressure distribution of polishing wafer surface more uniform during chemical mechanical polishing (CMP), a kind of the bionic polishing pad with sunflower seed pattern has been designed based on phyllotaxis theory, and the contact model and boundary condition of CMP have been established. Using finite element analysis, the contact pressure distributions between the polishing pad and wafer have been obtained when polishing silicon wafer and the effects of the phyllotactic parameter of polishing pad on the contact pressure distribution are found. The results show that the uniformity of the contact pressure distribution can be improved and the singularity of the contact pressure in the boundary edge of polished wafer can be decreased when the reasonable phyllotactic parameters are selected.

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38

Wu, Yong Bo, and Li Jun Wang. "A Fundamental Investigation on Ultrasonic Assisted Fixed Abrasive CMP (UF-CMP) of Silicon Wafer." Advanced Materials Research 983 (June 2014): 208–13. http://dx.doi.org/10.4028/www.scientific.net/amr.983.208.

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Анотація:

Chemical mechanical polishing (CMP) is often employed to obtain a super smooth work-surface of a silicon wafer. However, as a conventional CMP is a loose abrasive process, it is hard to achieve the high profile accuracy and lots of slurry must be supplied during CMP operations. As an alternate solution, a fixed abrasive CMP process can offer better geometrical accuracy and discharges less waste disposal. In this paper, in order to enhance the polishing efficiency and improve the work-surface quality, a novel ultrasonic assisted fixed abrasive CMP (UF-CMP) is proposed and the fundamental machining characteristics of the UF-CMP of a silicon wafer is investigated experimentally. The results show that with the ultrasonic assistance, the material removal rate (MRR) is increased, and the surface quality is improved.

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39

Peng, De-Xing. "Chemical mechanical polishing of steel substrate using aluminum nanoparticles abrasive slurry." Industrial Lubrication and Tribology 66, no. 1 (February 4, 2014): 124–30. http://dx.doi.org/10.1108/ilt-10-2011-0078.

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Purpose – Chemical mechanical polishing (CMP) has attracted much attention recently because of its importance as a nano-scale finishing process for high value-added large components that are used in the aerospace industry. The paper aims to discuss these issues. Design/methodology/approach – The characteristics of aluminum nanoparticles slurry including oxidizer, oxidizer contents, abrasive contents, slurry flow rate, and polishing time on aluminum nanoparticles CMP performance, including material removal amount and surface morphology were studied. Findings – Experimental results indicate that the CMP performance depends strongly on the oxidizer, oxidizer contents, and abrasive contents. Surface polished by slurries that contain nano-Al abrasives had a lower surface average roughness (Ra), lower topographical variations and less scratching. The material removal amount and the Ra were 124 and 7.61 nm with appropriate values of the process parameters of the oxidizer, oxidizer content, abrasive content, slurry flow rate and polishing time which were H2O2, 2 wt.%, 1 wt.%, 10 ml/min, 5 min, respectively. Originality/value – Based on SEM determinations of the process parameters for the polishing of the surfaces, the CMP mechanism was deduced preliminarily.

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40

Chen, Chao-Chang A., Jen-Chieh Li, Wei-Cheng Liao, Yong-Jie Ciou, and Chun-Chen Chen. "Dynamic Pad Surface Metrology Monitoring by Swing-Arm Chromatic Confocal System." Applied Sciences 11, no. 1 (December 27, 2020): 179. http://dx.doi.org/10.3390/app11010179.

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Анотація:

This study aims to develop a dynamic pad monitoring system (DPMS) for measuring the surface topography of polishing pad. Chemical mechanical planarization/polishing (CMP) is a vital process in semiconductor manufacturing. The process is applied to assure the substrate wafer or thin film on wafer that has reached the required planarization after deposition for lithographic processing of the desired structures of devices. Surface properties of polishing pad have a huge influence on the material removal rate (MRR) and quality of wafer surface by CMP process. A DPMS has been developed to analyze the performance level of polishing pad for CMP. A chromatic confocal sensor is attached on a designed fixture arm to acquire pad topography data. By swing-arm motion with continuous data acquisition, the surface topography information of pad can be gathered dynamically. Measuring data are analyzed with a designed FFT filter to remove mechanical vibration and disturbance. Then the pad surface profile and groove depth can be calculated, which the pad’s index PU (pad uniformity) and PELI (pad effective lifetime index) are developed to evaluate the pad’s performance level. Finally, 50 rounds of CMP experiments have been executed to investigate the correlations of MRR and surface roughness of as-CMP wafer with pad performance. Results of this study can be used to monitor the pad dressing process and CMP parameter evaluation for production of IC devices.

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41

Fu, Su Fang, Jian Guo Yao, Li Jie Ma, and Jian Xiu Su. "Analysis of Chemical Action of Oxidants in Chemical Mechanical Polishing of SiC Crystal Substrate." Advanced Materials Research 1027 (October 2014): 213–16. http://dx.doi.org/10.4028/www.scientific.net/amr.1027.213.

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Анотація:

Chemical mechanical polishing (CMP) had been considered as the most practical and effective method of achieving an ultra-smooth and non-damage surface in manufacturing SiC crystal substrate. CMP slurry was one of the key factors of CMP technology. In this paper, through investigating the changes of several core factors to evaluate the performance of CMP, such as the material removal rate (MRR), surface roughness Ra, 3D surface profiler, etc., the influence of various slurry and its content on the polishing efficiency and surface finish quality had been studied. The research results showed that different oxidant had different chemical action mechanism, also affecting the stability of CMP slurry and surface quality of specimen; adding suitable an oxidant to slurry could effectively improve the CMP performance.

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42

Li, Jun, Yong Zhu, and Chuang Tian Chen. "Chemical Mechanical Polishing of Transparent Nd:YAG Ceramics." Key Engineering Materials 375-376 (March 2008): 278–82. http://dx.doi.org/10.4028/www.scientific.net/kem.375-376.278.

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Transparent Nd:YAG ceramics which are very hard and brittle materials, are very difficult to be polished. There are many micro scratches or damages on the surface after mechanical polishing with Al2O3. In order to remove micro scratches or damages, chemical mechanical polishing (CMP) was adopted to manufacture Nd:YAG ceramics. In the polishing experiment, Pellon and Chemcloth pads were utilized for chemical mechanical polishing of Nd:YAG ceramics. Colloidal SiO2 was selected as the polishing slurry in two different polishing environments, acidity and alkalinity. The surface roughness was determined by using atomic force microscope. In this study, four polishing experimental combinations that each combination contains one of the two pads and one of the two polishing environments were carried out in the optimum polishing condition. Then the high quality surface of transparent Nd:YAG ceramics with the best surface roughness of < 0.2 nm RMS and few micro scratches or damages is obtained by adopting CMP process with Chemcloth pad and colloidal SiO2 in acidic condition.

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43

Doi, Toshiro K., Tsutomu Yamazaki, Syuhei Kurokawa, Yoji Umezaki, Osamu Ohnishi, Yoichi Akagami, Yasuhide Yamaguchi, and Sadahiro Kishii. "Study on the Development of Resource-Saving High Performance Slurry - Polishing/CMP for Glass Substrates in a Radical Polishing Environment, Using Manganese Oxide Slurry as an Alternative for Ceria Slurry." Advances in Science and Technology 64 (October 2010): 65–70. http://dx.doi.org/10.4028/www.scientific.net/ast.64.65.

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While investigating polishing mechanism of glass substrates with ceria abrasives (CeO2), we found its oxidizing properties worked effectively for the polishing. This finding has inspired us to speculate about the possibility of the manganese oxide abrasives as an alternative for ceria as they also have oxidizing properties. Therefore, focusing on the valence of the manganese, we have experimentally manufactured MnO, MnO2, Mn2O3 and Mn3O4 abrasives, and conducted a comparison study of the characteristics obtained with ceria slurry and manganese oxide slurries. As a result, the surface roughness of below Ra 0.8nm obtained with Mn2O3 slurry was found better than that with the conventional ceria slurry, on top of which, its removal rate was as good as or equal to that of ceria. Using a novel, closed type CMP (Chemical Mechanical Polishing) machine, we conducted another glass polishing experiment with ceria and manganese oxide slurries. The inside of the CMP machine was filled with high-pressure gases such as oxygen, air and nitrogen and kept at 500kPa to make the polishing environment radical. Through this experiment, we found an effective polishing method for high-quality surface. The removal rates were several times better than that of the conventional polishing performed in an open CMP machine.

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44

Cheng, Hai Feng, Li Jie Ma, Jian Guo Yao, and Jian Xiu Su. "Study on Process Parameters in CMP Ultra-Thin Stainless Steel Sheet." Advanced Materials Research 1027 (October 2014): 58–62. http://dx.doi.org/10.4028/www.scientific.net/amr.1027.58.

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Chemical mechanical polishing (CMP) is the most effective technology to achieve ultra-smooth without damage surface in ultra-precision machining of stainless steel substrate. In this paper, according to the slurry ingredients obtained by former research, the influences of the CMP process parameters, such as the rotational velocity of the platen and the carrier, the polishing pressure and the abrasive size on the material removal rate (MRR), have been studied in CMP stainless steel substrate based on the alumina (Al2O3) abrasive. The research results show that the material removal rate increases with the increase of the abrasive size, the rotational velocity of the platen and the polishing pressure significantly and the surface roughness increases with the increase of the abrasive size. This study results will provide the reference for optimizing the process parameters and researching the material removal mechanism in CMP stainless steel sheet.

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45

ODA, Akiyoshi, Masato OHTA, Junji SHIBATA, and Takayasu KIMURA. "A Basic Study on Chemical Mechanical Polishing (CMP)." Proceedings of The Manufacturing & Machine Tool Conference 2002.4 (2002): 213–14. http://dx.doi.org/10.1299/jsmemmt.2002.4.213.

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46

Sun, Yu Li, Dun Wen Zuo, Yong Wei Zhu, Rong Fa Chen, D. S. Li, and M. Wang. "Experimental Study on Cryogenic Polishing Single Silicon Wafer with Nano-Sized Cerium Dioxide Powders." Advanced Materials Research 24-25 (September 2007): 177–82. http://dx.doi.org/10.4028/www.scientific.net/amr.24-25.177.

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Cryogenic polishing single silicon wafer with nano-sized CeO2 abrasives can be known as cryogenic fixed abrasives CMP (CFA-CMP). The abrasive slurry was made of nano-sized CeO2 particles dispersed in de-ionized water with a surfactant and the polishing slurry froze to form cryogenic polishing pad. Then the polishing tests of the blanket silicon wafers in the presence of the cryogenic polishing pad containing the nano-particulates were carried out. The morphologies and surfaces roughness of the polished silicon wafers were observed and examined on an atomic force microscope (AFM). The results show that a super smooth surface with roughness of 0. 293 nm is obtained within 5000 nm× 5000 nm and the removal of material is dominated by plastic flowage.

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47

Zhao, Y., Dun Wen Zuo, and Yu Li Sun. "Status and Trends of Fixed Abrasive Polishing on Semiconductor." Key Engineering Materials 499 (January 2012): 390–96. http://dx.doi.org/10.4028/www.scientific.net/kem.499.390.

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The necessity of fixed abrasive CMP in polishing semiconductor materials processing was analyzed. Compared the shortcomings of traditional free abrasive polishing with the advantages of fixed abrasive polishing, the applications of fixed abrasive polishing technology in semiconductor processing were described. A variety of fixed abrasive polishing pad production methods were introduced. The development trend of fixed abrasive polishing was prospected.

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48

Tang, Heng Xing, Chu Peng Zhang, and Lin Lin. "Development of an Ultra-Precision Annular Polishing Machine Tool with Full Gas Static Pressure." Key Engineering Materials 837 (April 2020): 183–90. http://dx.doi.org/10.4028/www.scientific.net/kem.837.183.

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In order to improve chemical mechanical polishing (CMP) efficiency and accuracy in the fabrication of planar optics, CMP models and machine tools have been developed. A three-dimensional contour map of the surface of the polishing plate was established by measuring the runout error of several circles on the polishing plate. Based on the Preston equation and the three-dimensional contour map, a CMP model that simulates material removal at any point on the work piece is proposed. This model shows that higher motion accuracy can improve efficiency and accuracy. Then, based on this point of view, a new CMP machine tool was designed, and the ultra-precision gas static pressure guide rail and turntable and Siemens 840Dsl numerical control system were applied to the new CMP machine tool. In order to validate the new machine, a series of testing and processing experiments were carried out. The straightness error of the gas static pressure guide rail can be less than 1.1 μm. The axial runout error of the gas turntable can be less than ±0.4 μm. The surface profile of the experimental workpiece can be less than 0.01λ, and the processing efficiency of the new CMP machine can reach 4 times of the processing efficiency of the conventional CMP machine. In addition, the repeatability and stability of the CMP process is improved on new machines.

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49

Peng, De-Xing. "Optimization of chemical mechanical polishing parameters on surface roughness of steel substrate with aluminum nanoparticles via Taguchi approach." Industrial Lubrication and Tribology 66, no. 6 (September 2, 2014): 685–90. http://dx.doi.org/10.1108/ilt-07-2012-0063.

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Анотація:

Purpose – The purpose of this paper is to investigate the effects of abrasive contents, oxidizer contents, slurry flow rate and polishing time in achieving a mirror-like finish on polished surfaces. Chemical mechanical polishing (CMP) is now widely used in the aerospace industry for global planarization of large, high value-added components. Design/methodology/approach – Optimal parameters are applied in experimental trials performed to investigate the effects of abrasive contents, oxidizer contents, slurry flow rate and polishing time in achieving a mirror-like finish on polished surfaces. Taguchi design experiments are performed to optimize the parameters of CMP performed in steel specimens. Findings – Their optimization parameters were found out; the surface scratch, polishing fog and remaining particles were reduced; and the flatness of the steel substrate was guaranteed. The average roughness (Ra) of the surface was reduced to 6.7 nm under the following process parameters: abrasive content of 2 weight per cent, oxidizer content of 2 weight per cent, slurry flow rate of 100 ml/min and polishing time of 20 min. Originality/value – To meet the final process requirements, the CMP process must provide a good planarity, precise selectivity and a defect-free surface. Surface planarization of components used to fabricate aerospace devices is achieved by CMP process, which enables global planarization by combining chemical and mechanical interactions.

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50

Son, Jungyu, and Hyunseop Lee. "Contact-Area-Changeable CMP Conditioning for Enhancing Pad Lifetime." Applied Sciences 11, no. 8 (April 14, 2021): 3521. http://dx.doi.org/10.3390/app11083521.

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Анотація:

Chemical–mechanical polishing (CMP) is a process that planarizes semiconductor surfaces and is essential for the manufacture of highly integrated devices. In CMP, pad conditioning using a disk with diamond grit is adopted to maintain the surface roughness of the polishing pad and remove polishing debris. However, uneven pad wear by conditioning is unavoidable in CMP. In this study, we propose a contact-area-changeable conditioning system and utilize it to conduct a preliminary study for improving pad lifetime. Using the conventional conditioning method (Case I), the material removal rate (MRR) decreased rapidly after 12 h of conditioning and the within-wafer non-uniformity (WIWNU) increased. However, the results of conditioning experiments show that when using a contact-area-changeable conditioning system, uniform pad wear can be obtained in the wafer–pad contact area and the pad lifetime can be extended to more than 20 h. Finally, the newly proposed conditioning system in this study may improve the CMP pad lifetime.

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