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1
Duncan, Martin Russell. "CMOS-compatible high-voltage transistors." Thesis, University of Edinburgh, 1994. http://hdl.handle.net/1842/12182.
Повний текст джерелаАнотація:
Bipolar transistors are known to be the most suitable for high-voltage and power applications, due to their inherently greater current handling capability. In contrast, MOS technology is preferable for logic applications, due to its superior packing density. Therefore the 'ideal' solution to the smart power problem of integrating control elements on the same die as power switches is a marriage of the two different technologies. This results in a complex process that can only be cost effective in high volume applications. For ASIC applications and low volume product runs a less expensive compromise solution is needed. By analyzing both bipolar and MOS, low and high voltage devices, it was found that if more than one power transistor is needed on the circuit, and a single technology is to be used, then MOS power transistors are inherently easier to integrate into a low voltage process. In particular the lateral double-diffused transistor (LDMOS) with all terminal contacts on the surface is to be preferred. Analyzing a CMOS process, common processing steps were found for both the low and high-voltage devices, leading to a smart power solution that doesn't need many masking levels. By making small changes to an established n-well CMOS process, and developing a novel power transistor structure with a field oxidation separating the channel and drain, a 120 Volt n-channel power transistor could be realised within a conventional process with no additional processing steps. By adding one further masking layer, a complementary p-channel power transistor that supported -55 Volts could be fabricated. If these transistors were fabricated on a p- epitaxial layer on an n- substrate then by changing the p-channel power device structure, a breakdown voltage of -95 Volt could be achieved using only nine masking layers.
2
Ng, Wing Lun. "Low-voltage high-frequency CMOS transformer-feedback voltage-controlled oscillators /." View abstract or full-text, 2006. http://library.ust.hk/cgi/db/thesis.pl?ECED%202006%20NG.
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3
Holman, William Timothy. "A low noise CMOS voltage reference." Diss., Georgia Institute of Technology, 1994. http://hdl.handle.net/1853/14968.
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4
Shabra, Ayman U. (Ayman Umar). "Ultra-low voltage CMOS operational amplifiers." Thesis, Massachusetts Institute of Technology, 1997. http://hdl.handle.net/1721.1/29876.
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5
Colombo, Dalton Martini. "Bandgap voltage references in submicrometer CMOS technology." reponame:Biblioteca Digital de Teses e Dissertações da UFRGS, 2009. http://hdl.handle.net/10183/16136.
Повний текст джерелаАнотація:
Referências de tensão são blocos fundamentais em uma série de aplicações de sinais mistos e de rádio frequência, como por exemplo, conversores de dados, PLL's e conversores de potência. A implementação CMOS mais usada para referências de tensão é o circuito Bandgap devido sua alta previbilidade, e baixa dependência em relação à temperatura e tensão de alimentação. Este trabalho estuda aplicação de Referência de Tensão Bandgap. O princípio, as topologias tradicionalmente usadas para implementar este método e as limitações que essas arquiteturas sofrem são investigadas. Será também apresentada uma pesquisa das questões recentes envolvendo alta precisão, operação com baixa tensão de alimentação e baixa potência, e ruído de saída para as referências Bandgap fabricadas em tecnologias submicrométricas. Além disso, uma investigação abrangente do impacto causado pelo o processo da fabricação e do ruído no desempenho da referência é apresentada. Será mostrado que o ruído de saída pode limitar a precisão dos circuitos Bandgap e seus circuitos de ajuste. Para desenvolver nosso trabalho, três Referências Bandgap foram projetadas utilizando o processo IBM 7RF 0.18 micra com uma tensão de alimentação de 1.8V. Também foram projetados os leiautes desses circuitos para prover informações pósleiaute extraídos e resultados de simulação elétrica. Este trabalho provê uma discussão de algumas topologias e das práticas de projeto para referências Bandgap.A Voltage Reference is a pivotal block in several mixed-signal and radio-frequency applications, for instance, data converters, PLL's and power converters. The most used CMOS implementation for voltage references is the Bandgap circuit due to its highpredictability, and low dependence of the supply voltage and temperature of operation. This work studies the Bandgap Voltage References (BGR). The most relevant and the traditional topologies usually employed to implement Bandgap Voltage References are investigated, and the limitations of these architectures are discussed. A survey is also presented, discussing the most relevant issues and performance metrics for BGR, including, high-accuracy, low-voltage and low-power operation, as well as the output noise of Bandgap References fabricated in submicrometer technologies. Moreover, a comprehensive investigation on the impact of fabrication process effects and noise on the reference voltage is presented. It is shown that output noise can limit the accuracy of the BGR and trim circuits. To support and develop our work, three BGR´s were designed using the IBM 0.18 Micron 7RF process with a supply voltage of 1.8 V. The layouts of these circuits were also designed to provide post-extracted layout information and electrical simulation results. This work provides a comprehensive discussion on the structure and design practices for Bandgap References.
6
Kim, Hyung-Seuk 1976. "Low voltage CMOS frequency synthesizers for RF applications." Thesis, McGill University, 2005. http://digitool.Library.McGill.CA:80/R/?func=dbin-jump-full&object_id=82607.
Повний текст джерелаАнотація:
Frequency synthesizers play an important role in modern communications and timing systems. The output of frequency synthesizers may be used as the local oscillator signal in superheterodyne transceivers, or in frequency modulation/demodulation. Fully integrated CMOS RF synthesizers are currently a major research topic. Several publications demonstrated improvements in a variety of aspects such as phase noise, power consumption, and tuning range. However, very low voltage frequency synthesizers are very challenging, since they usually have a limited tuning range and a relatively high phase noise. This research work demonstrates a new architecture to achieve a wide tuning range and low phase noise from a very low voltage supply. The synthesizer is fully integrated in a 0.18 mum CMOS technology covering the 5 GHz WLAN frequency range, requiring only a 1-V power supply. The second part of this thesis consists of the implementation of a 2.4-GHz fractional-N frequency synthesizer to be compatible with two MEMS resonators that resonate at 20-MHz and 70-MHz.
7
Naude, Neil. "Differential current sensor linearisation in low-voltage CMOS." Diss., University of Pretoria, 2017. http://hdl.handle.net/2263/62785.
Повний текст джерелаАнотація:
The viability of low cost, distributed, and autonomous wireless sensor networks is determined by the affordability of the integration and operation of each sensor node. Self-sufficient nodes which harvest energy from the local environment decrease operating and maintenance costs over extended periods of time. This affordability can be achieved by increasing the power usage efficiency of designs implemented in an older and cheaper CMOS process. This circumvents the use of a more compact technology node which trades increased efficiency for cost. The efficiency of power conversion is determined by topology, component quality, control scheme, and internal measurement accuracy. This research focuses on improving internal measurement during the power conversion process, in order to reduce conversion loss from the internal control error. A current sensing integrated circuit was proposed which is insensitive to dominant process characteristics which degrade the performance of other sensing solutions. In particular, the detrimental effect of channel length modulation is compensated for. This compensation is achieved by decoupling the sensor biasing and differential steering pair from being influenced by the external current being measured. Widely used solutions were studied and analysed in the context of implementation in a low cost and low-voltage CMOS process. Key process characteristics which negatively influenced these solutions were identified and formed the basis of developing an improved integrated current sensor. Current research in the literature is tightly focused on improved accuracy without the constraints of process costs, low operating voltage (800mV – 1.2 V), and prevalent second order effects of device operation. A study of the literature on CMOS-based integrated current sensing demonstrates a common goal towards improving sensor accuracy by developing either new topologies or augmenting known topologies. New and augmented topologies focus on novel analogue networks which aim to improve the linearity of CMOS based current sensing. The colloquially named SenseFET circuit is a foundation for many variations of integrated current sensor. This integrated circuit generates an estimate of the current flowing into a DC-DC boost-buck converter by sampling the current sourced into the converters inductor. The low maximum operating voltage of the chosen CMOS process restricts the application of typical published solutions. The sensitivity of other solutions to second order effects limits application as well. The proposed solution is based on such a sampling topology with a focus on achieving linearity in a process with pronounced channel-length modulation effects as well as a relatively low operating voltage. The goal of the improved design is to test if linearity can be improved by developing a circuit which is robust towards second-order process effects. Discreet and integrated boost-buck converters were studied and analysed to form the basis of further sensor developments. An integrated non-inverting converter topology suitable for single rail operation was identified and designed as the system environment for which an integrated sensor would be developed. This would allow for comparison of sensor designs in a known environment, both in simulation and in prototyping of the integrated system. The proposed integrated current sensor was developed analytically before being simulated both mathematically and at transistor gate level. This iterative process was applied to a known design as a performance baseline and to demonstrate the improvements achieved.Dissertation (MEng)--University of Pretoria, 2017.
Electrical, Electronic and Computer Engineering
MEng
Unrestricted
8
Layton, Kent D. "Low-voltage analog CMOS architectures and design methods /." Diss., CLICK HERE for online access, 2007. http://contentdm.lib.byu.edu/ETD/image/etd2141.pdf.
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9
Layton, Kent Downing. "Low-Voltage Analog CMOS Architectures and Design Methods." BYU ScholarsArchive, 2007. https://scholarsarchive.byu.edu/etd/1218.
Повний текст джерелаАнотація:
This dissertation develops design methods and architectures which allow analog circuits to operate at VT + 2Vds,sat, the minimum supply for CMOS circuits with all transistors in the active region where Vds,sat is the drain to source saturation voltage of a MOS transistor. Techniques which meet this criteria for rail-to-rail input stages, gain enhancement stages, and output stages are discussed and developed. These techniques are used to design four fully-differential rail-to-rail amplifiers. The highest gain is shown to be attained using a drain voltage equalization (DVE) or active-bootstrapping technique which produces more than 100dB of gain in a two stage amplifier with a bulk-driven input pair while showing no bandwidth degradation when compared to amplifier architectures with similar biasing. The low voltage design techniques are extended to switching and sampling circuits. A 10-bit digital to analog converter (DAC) and a 10-bit analog to digital converter (ADC) are designed and fabricated in a 0.35um dual-well CMOS process to prove the developed design methods, architectures, and techniques. The 10-bit DAC operates at 1MSPS with near rail-to-rail differential output operation with a 700mV supply voltage. This supply voltage, which is 150mV lower than the VT+2Vds,sat limit, is attained by using a bulk driven threshold voltage lowering technique. The ADC design is a fully-differential pipelined 10-bit converter that operates at 500kSPS with a full scale input range equal to the supply voltage and can operate at supply voltages as low as 650mV, 200mV below the VT + 2Vds,sat limit. The design methods and architectures can be used in advanced processes to maintain gain and minimize supply voltage. These designs show a minimum supply improvement over previously published designs and prove the efficacy of the design architectures and techniques presented in this dissertation.
10
Ballan, Hussein Declercq Michel Declercq Michel Declercq Michel. "High voltage devices and circuits in standard CMOS technologies /." Dordrecht : Kluwer Academic Publishers, 1999. http://opac.nebis.ch/cgi-bin/showAbstract.pl?u20=079238234X.
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11
Eken, Yalcin Alper. "High frequency voltage controlled ring oscillators in standard CMOS." Diss., Georgia Institute of Technology, 2004. http://hdl.handle.net/1853/8064.
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12
Parker, Kevin. "An on-chip trimming technique for CMOS voltage references." Thesis, National Library of Canada = Bibliothèque nationale du Canada, 1997. http://www.collectionscanada.ca/obj/s4/f2/dsk2/ftp04/mq20686.pdf.
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13
Park, Byeong-Ha. "A low-voltage, low-power, CMOS 900MHZ frequency synthesizer." Diss., Georgia Institute of Technology, 1997. http://hdl.handle.net/1853/16686.
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14
Caicedo, Jhon Alexander Gomez. "CMOS low-power threshold voltage monitors circuits and applications." reponame:Biblioteca Digital de Teses e Dissertações da UFRGS, 2016. http://hdl.handle.net/10183/144080.
Повний текст джерелаАнотація:
Um monitor de tensão de limiar (VT0) é um circuito que, idealmente, entrega o valor do VT0 como uma tensão na saída, para uma determinada faixa de temperatura, sem a necessidade de polarização externa, configurações paramétricas, ajuste de curvas ou qualquer cálculo subsequente. Estes circuitos podem ser usados em sensores de temperatura, referências de tensão e corrente, dosímetros de radiação e outras aplicações, uma vez que a dependência do VT0 nas condições de operação é um aspecto bem modelado. Além disso, estes circuitos podem ser utilizados para monitoramento de processos de fabricação e para compensação da variabilidade do processo, uma vez que o VT0 é um parâmetro chave para o comportamento do transistor e sua modelagem. Nesta tese, são apresentadas três novas topologias de circuitos, duas são monitores de VT0 NMOS e a terceira é um monitor de VT0 PMOS. As três estruturas são topologias de circuito auto-polarizadas que não utilizam resistências, e apresentam alta rejeição a variações na alimentação, baixa sensibilidade de Linea, e permitem a extração direta da tensão de limiar para grandes intervalos de temperatura e de tensão de alimentação, com pequeno erro. Sua metodologia de projeto é baseada no modelo unificado controlado por corrente (UICM), um modelo MOSFET que é contínuo, desde o nível de inversão fraca a forte e para as regiões de operação de triodo e saturação. Os circuitos ocupam uma pequena área de silício, consomem apenas dezenas de nanowatts, e podem ser implementados em qualquer processo padrão CMOS digital, uma vez que só utilizam transistores MOS (não precisa de nenhum resistor). Os monitores de VT0 são utilizados em diferentes aplicações, a fim de investigar a sua funcionalidade e comportamento como parte de um sistema. As aplicações variam de uma tensão de referência, que apresenta um desempenho comparável ao estado da arte, para uma configuração que permite obter uma menor variabilidade com processo na saída de um circuito auto-polarizado que gera um tensão CTAT. Além disso, explorando a capacidade de funcionar como um gerador de corrente específica (ISQ) que os monitores de VT0 aqui apresentados oferecem, introduz-se um novo circuito auto-polarizado que gera um tensão CTAT, que é menos sensível a variações de processo, e pode ser usado em referências de tensão band-gap.A threshold voltage (VT0) monitor is a circuit that ideally delivers the estimated VT0 value as a voltage at its output, for a given temperature range, without external biases, parametric setups, curve fitting or any subsequent calculation. It can be used in temperature sensors, voltage and current references, radiation dosimeters and other applications since the MOSFET VT0 dependence on the operation conditions is a very well modeled aspect. Also, it can be used for fabrication process monitoring and process variability compensation, since VT0 is a key parameter for the transistor behavior and modeling. In this thesis, we present three novel circuit topologies, two of them being NMOS VT0 monitors and the last one being a PMOS VT0 monitor. The three structures are resistorless self-biased circuit topologies that present high power supply rejection, low line sensitivity, and allow the direct extraction of the threshold voltage for wide temperature and power supply voltage ranges, with small error. Its design methodology is based on the Unified Current Control Model (UICM), a MOSFET model that is continuous from weak to strong inversion and from triode to saturation regions. The circuits occupy small silicon area, consume just tens of nanoWatts, and can be implemented in any standard digital CMOS process, since they only use MOS transistors (does not need any resistor). The VT0 monitors are used in different applications in order to prove their functionality, and behavior as part of a system. The applications vary from a reference voltage, that presents performance comparable with state-of-the-art works, to a configuration that allows to obtain a lower process variability, in the output of a self-biased circuit that generates a complementary to the absolute temperature (CTAT) voltage. In addition, exploiting the ability to operate as an specific current (ISQ) generator, that the VT0 monitors presented here offer, we introduced a new self-biased circuit that produces a CTAT voltage and is less sensitive to process variations, and can be used in band-gap voltage references.
15
Eken, Yalçin Alper. "High frequency voltage controlled ring oscillators in standard CMOS." Available online, Georgia Institute of Technology, 2004:, 2003. http://etd.gatech.edu/theses/available/etd-06072004-131133/unrestricted/eken%5Fyalcin%5Fa%5F200405%5Fphd.pdf.
Повний текст джерела
16
Mattia, Neto Oscar Elisio. "NanoWatt resistorless CMOS voltage references for Sub-1 V applications." reponame:Biblioteca Digital de Teses e Dissertações da UFRGS, 2014. http://hdl.handle.net/10183/107131.
Повний текст джерелаАнотація:
Referências de tensão integradas sempre foram um bloco fundamental de qualquer sistema eletrônico e um importante tópico de pesquisa que tem sido estudado extensivamente nos últimos 50 anos. Uma tensão de referência é um circuito que provê uma tensão estável com baixa sensibilidade a variações em temperatura, alimentação, carga, características do processo de fabricação e tensões mecânicas de encapsulamento. Elas são normalmente implementadas através da soma ponderada de dois fenômenos físicos diferentes, com comportamentos em temperatura opostos. Normalmente, a tensão térmica, relacionada à constante de Boltzmann e à carga do elétron, fornece uma dependência positiva com temperatura, enquanto que a tensão base-emissor VBE de um transistor bipolar ou a tensão de limiar de um MOSFET fornece o termo complementar. Um bloco auxiliar é às vezes utilizado para fornecer as correntes de polarização do circuito, e outros blocos adicionais implementam a soma ponderada. A evolução da tecnologia de processos é o principal fator para aplicações em baixa tensão, enquanto que a emergência de dispositivos portáteis operados a bateria, circuitos biomédicos implantáveis e dispostivos de captura de energia do ambiente restringem cada circuito a consumir o mínimo possivel. Portanto, alimentações abaixo de 1 V e consumos na ordem de nanoWatts se tornaram características fundamentais de tais circuitos. Contudo, existem diversos desafios ao projetar referências de tensão de alta exatidão em processos CMOS modernos sob essas condições. As topologias tradicionais não são adequadas pois elas provêm uma referência de tensão acima de 1 V, e requerem resistências da ordem de G para atingir tão baixo consumo de potência, ocupando assim uma grande área de silício. Avanços recentes atingiram tais níveis de consumo de potência, porém com limitada exatidão, custosos procedimentos de calibração e grande área ocupada em silício. Nesta dissertação apresentam-se duas novas topologias de circuitos: uma tensão de junção bipolar com compensação de curvatura que não utiliza resistores e é auto-polarizada; e um circuito de referência bandgap sem resistores que opera abaixo de 1 V (também chamado de sub-bandgap). Ambos circuitos operam com consumo na ordem de nanoWatts e ocupam pequenas áreas de silício. Resultados de simulação para dois processos diferentes, 180 nm e 130 nm, e resultados experimentais de uma rodada de fabricação em 130 nm apresentam melhorias sobre tais limitações, mantendo as características desejadas de não conter resistores, ultra baixo consumo, baixa tensão de alimentação e áreas muito pequenas.Integrated voltage references have always been a fundamental block of any electronic system, and an important research topic that has been extensively studied in the past 50 years. A voltage reference is a circuit that provides a stable voltage with low sensitivity to variations in temperature, supply, load, process characteristics and packaging stresses. They are usually implemented through the weighted sum of two independent physical phenomena with opposite temperature dependencies. Usually the thermal voltage, related to the Boltzmann’s constant and the electron charge, provides a positive temperature dependence, while the silicon bandgap voltage or a MOSFET’s threshold voltage provide the complementary term. An auxiliary biasing block is sometimes necessary to provide the necessary currents for the circuit to work, and additional blocks implement the weighted sum. The scaling of process technologies is the main driving factor for low voltage operation, while the emergence of portable battery-operated, implantable biomedical and energy harvesting devices mandate that every circuit consume as little power as possible. Therefore, sub-1 V supplies and nanoWatt power have become key characteristics for these kind of circuits, but there are several challenges when designing high accuracy voltage references in modern CMOS technologies under these conditions. The traditional topologies are not suitable because they provide a reference voltage above 1 V, and to achieve such power consumption levels would require G resistances, that occupy a huge silicon area. Recent advances have achieved these levels of power consumption but with limited accuracy, expensive calibration procedures and large silicon area.
17
Beck, Riley D. "High Voltage Analog Design in a Standard Digital CMOS Process." Diss., CLICK HERE for online access, 2005. http://contentdm.lib.byu.edu/ETD/image/etd1092.pdf.
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18
Chunda, Jaime P. "Low voltage operational amplifier using parasitic bipolar transistors in CMOS." Thesis, Monterey, Calif. : Springfield, Va. : Naval Postgraduate School ; Available from National Technical Information Service, 1995. http://handle.dtic.mil/100.2/ADA303882.
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19
Wang, Yanbin. "Threshold voltage control by backgating in fully depleted SOI CMOS." Thesis, National Library of Canada = Bibliothèque nationale du Canada, 1999. http://www.collectionscanada.ca/obj/s4/f2/dsk1/tape8/PQDD_0007/MQ43350.pdf.
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20
Hu, Yamu. "CMOS low-voltage preamplifier based on i/f noise cancellation." Thesis, National Library of Canada = Bibliothèque nationale du Canada, 2001. http://www.collectionscanada.ca/obj/s4/f2/dsk3/ftp04/MQ60898.pdf.
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21
Bhavnagarwala, Azeez Jenúddin. "Voltage scaling constraints for static CMOS logic and memory cirucits." Diss., Georgia Institute of Technology, 2001. http://hdl.handle.net/1853/15401.
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22
Nohra, George. "Low voltage CMOS LNA design." Thesis, 2005. http://spectrum.library.concordia.ca/8913/1/MR14276.pdf.
Повний текст джерелаАнотація:
Two important factors are motivating recent CMOS Radio Frequency Integrated Circuits (RFIC) research: freeing new bandwidth for commercial use and the appealing characteristics of CMOS technologies. Traditionally implemented in bipolar and III---V compounded semiconductors, radio frequency receivers operating on frequencies up to 40 GHz are currently being researched and implemented in CMOS. Global Positioning System (GPS), Blue Tooth, Radio Frequency ID (RFID), wireless local area network (WLAN) and Automated Highway System (AHS), is a partial list of the newly growing market of RFIC commercial products and these products share the same design concepts: low prices, highly integrated systems and low power designs. With these concepts in mind, CMOS technology becomes a strong contender and the question of CMOS suitability has been answered. Low Power CMOS chips have been successfully fabricated in both, research centers and industry. This dissertation explores the architectural and design techniques for CMOS Low Voltage Low Noise Amplifier design. The thesis studies different low voltage techniques and proposes a novel Low Voltage LNA design based on a cascade topology and a new way to control the amplifier gain and improve its linearity. Also, based on electromagnetic theory and simulation, simple techniques were proposed that increases the quality factor of on chip inductors. Detailed LNA design steps and optimization are presented with special focus on CMOS transistor design, biasing and layout optimization for RFIC applications.
23
Xu, Deng-Tai, and 許登泰. "CMOS-compatible high-voltage MOSFETs." Thesis, 1990. http://ndltd.ncl.edu.tw/handle/26534510776214840699.
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24
Wang, Ru-Jie, and 王銣傑. "CMOS Voltage References without Resistors." Thesis, 2007. http://ndltd.ncl.edu.tw/handle/77139533456387300631.
Повний текст джерелаАнотація:
碩士輔仁大學
電子工程學系
95
This work presents two CMOS voltage references without resistors. The first one is a curvature-compensated bandgap reference without resistors in 0.18-μm CMOS technology. The circuit uses a new current generator circuit for higher order temperature terms curvature compensation and a PMOS voltage divider for scaling down the reference voltage. A 605.6mV output voltage is generated with a temperature coefficient of 1 ppm/°C from –40 to 125 °C. It dissipates 77μW at a supply voltage of 1.8-V. The second one is a low-voltage low-power bandgap voltage reference without using passive components. A reference voltage of 646.4 mV is generated with a temperature coefficient of 1.7 ppm/°C in the range [−40, +125] °C at 1.8-V supply voltage. A line sensitivity of 0.18 mV/V in the supply voltage range [+1, +1.8] V are achieved. It dissipates a maximum power of 4.9 μW at a 1.8-V supply voltage and 125 °C. The silicon area is as small as 100 × 50 μm2 in 0.18um CMOS process.
25
Cheng, Yu-Sung, and 鄭育松. "CMOS Integrated Buck Voltage Converter." Thesis, 2010. http://ndltd.ncl.edu.tw/handle/85998319352058519420.
Повний текст джерелаАнотація:
碩士龍華科技大學
電子工程研究所
98
In this thesis, a series of DC voltage regulators, such as Bandgap reference (BGR), Low dropout regulator (LDO) and DC-DC Buck Converter are developed. The BGR circuit is a low sensitivity to temperature and supply voltage. To increase the performances, an nMOS arrangement folded operational transconductance amplifier is developed for the BGR circuit. In addition, a small size, low cost and low ripple output voltage LDO regulator is introduced. Finally, in order to increase operating time of the battery powered devices, a high efficiency, high noise rejection Buck DC-DC Converter is also introduced. The LDO circuit consists of an error amplifier, buffer and feedback circuit, while the DC-DC Buck Converter circuit is composed of a frequency compensation circuit, PWM control circuit, non-overlapping circuit and pMOS power transistor. In the power converter, the PWM circuit included a ramp generator, a clock generator, a comparator, a clock generator and a flip-flop circuit. The clock generator provided a fixed frequency for the PWM controlled circuit. This PWM circuit generates a fixed-frequency and has a wide range controlled duty. In this thesis, the proposed circuit, had simulated with TSMC 0.35μm 2P4M models, and had implemented with TSMC 0.35μm 2P4M process. The measurement results show that the output voltage of the LDO and DC-DC Buck Converter Operating voltage are ranging 2V to 5V and the output voltage is 1.8V. The maximum efficiency of DC converter is over 90 %.
26
KRISHNA, KUMMARAPALLI KOMALA. "ADAPTIVELY BIASED CMOS VOLTAGE FOLLOWER." Thesis, 2016. http://dspace.dtu.ac.in:8080/jspui/handle/repository/15208.
Повний текст джерелаАнотація:
A novel CMOS adaptive biasing technique has been proposed for low power applications
which can be applied to any CMOS circuit having differential current at one of its node. This
technique gives an output current proportional to input differential voltage. The proposed
technique can be used in low voltage high speed operational amplifiers. The dynamic bias
current saves power and also improve slew rate, delay. A modified NMOS topology technique
is also applied to a conventional operational amplifier to improve the slew rate. A SPICE
simulation for proposed technique and modified NMOS topology technique in 0.18um CMOS
technology is reported.
27
Chen, Shih-Lun, and 陳世倫. "High-Voltage Circuit Design in Low-Voltage CMOS Processes." Thesis, 2006. http://ndltd.ncl.edu.tw/handle/70309962398742844556.
Повний текст джерелаАнотація:
博士國立交通大學
電子工程系所
94
The scaling trend of the CMOS technology is toward the nanometer region to increase the speed and density of the transistors in integrated circuits. Due to the reliability issue, the power supply voltage is also decreased with the advanced technologies. However, in an electronic system, some circuits could be still operated at high voltage levels. If the circuits realized with low-voltage devices are operated at high voltage levels, the gate-oxide breakdown, hot-carrier degradation, leakage issues, and so on will occur. Therefore, designing the high-voltage circuits in low-voltage CMOS processes is an important topic in today and future VLSI (very large scale integration) design. In this dissertation, several circuits designed in low-voltage CMOS processes but operated in high-voltage environments are presented. There are seven chapters included in this dissertation. Two new mixed-voltage I/O buffers realized with low-voltage devices are presented in Chapter 2 to prevent the undesired leakage current paths and the gate-oxide reliability problem, which occur in the conventional CMOS I/O buffer. These two new mixed-voltage I/O buffer have novel gate-tracking circuits and dynamic n-well bias circuits. Compared with the prior designs of mixed-voltage I/O buffers, these two new mixed-voltage I/O buffers occupy smaller silicon area. Besides, the new proposed mixed-voltage I/O buffer 2 can be applied for high-speed applications without the gate-oxide reliability problem and the circuit leakage issue. The new proposed mixed-voltage I/O buffers realized with 1×VDD devices can be easily applied in 1×VDD/2×VDD mixed-voltage interface. Due to the high-integration trend of SOC (system-on-a-chip), an electronic system may be integrated into a single chip. Hence, there are digital circuits and analog circuits integrated in a single chip. For example, the digital part of the SOC is designed with 1-V devices to decrease its power consumption, the analog part is designed with 2.5-V devices to improve the circuit performance, and the chip-to-chip interface is 3.3-V PCI-X in a 0.13-µm 1/2.5-V CMOS process. Thus, the traditional I/O circuits are not suitable for this application. An input buffer with the proposed Schmitt trigger circuit and an output buffer with the proposed level converter in a 0.13-µm 1/2.5-V CMOS process are presented in Chapter 3 for 3.3-V applications. An NMOS-blocking technique for mixed-voltage I/O buffer design is presented in Chapter 4. Unlike the traditional mixed-voltage I/O buffer design, the mixed-voltage I/O buffer realized with only 1×VDD devices by using the NMOS-blocking technique can receive 2×VDD, 3×VDD, and even 4×VDD input signals without the gate-oxide reliability issue. In this dissertation, the 2×VDD input tolerant mixed-voltage I/O buffer by using the NMOS-blocking technique has been verified in a 0.25-μm 2.5-V CMOS process to serve 2.5/5-V mixed-voltage interface. The 3×VDD input tolerant mixed-voltage I/O buffer by using the NMOS-blocking technique has been verified in a 0.13-μm 1-V CMOS process to serve 1/3-V mixed-voltage interface. The NMOS-blocking technique can be extended to design the 4×VDD, 5×VDD, and even 6×VDD input tolerant mixed-voltage I/O buffers. The limitation of the NMOS-blocking technique is the breakdown voltage of the pn-junction in the given CMOS process. A new charge pump circuit without the gate-oxide overstress is presented in Chapter 5. Because the charge transfer switches of the new proposed charge pump circuit can be fully turned on and turned off, as well as the output stage doesn’t have the threshold drop problem, its pumping efficiency is higher than that of the prior designs. The gate-drain and the gate-source voltages of all devices in the new charge pump circuit don’t exceed VDD, so the new charge pump circuit doesn’t suffer the gate-oxide reliability problem. Besides, the proposed charge pump circuit has two pumping branches pumping the output node alternately so the output voltage ripple is small. The proposed circuit is suitable in low-voltage CMOS processes because of its high pumping efficiency and no overstress across the gate oxide of devices. In general, the output voltage of the charge pump circuit will be limited by the breakdown voltage of the parasitic pn-junction in the given CMOS process. Chapter 6 presents an on-chip ultra-high-voltage charge pump circuit designed with the polysilicon diodes in low-voltage standard CMOS processes. Because the polysilicon diodes are fully isolated from the silicon substrate, the output voltage of the charge pump circuit is not limited by the junction breakdown voltage of parasitic pn-junction. The polysilicon diodes can be implemented in the standard (bulk) CMOS processes without extra process steps. The proposed charge pump circuit designed with the polysilicon diodes has been fabricated and verified in a 2.5-V 0.25-µm bulk CMOS process. In summary, several circuits designed in low-voltage CMOS processes but operated in high-voltage environments are presented in this dissertation. The proposed circuits have been implemented and verified in silicon chips. The proposed circuits are very useful and cost-efficient for the advanced SOC applications.
28
Ren, Jie. "Design of Low-Voltage Wide Tuning Range CMOS Multipass Voltage-Controlled Ring Oscillator." 2011. http://hdl.handle.net/10222/13341.
Повний текст джерелаАнотація:
This thesis introduces a multipass loop voltage controlled ring oscillator. The proposed structure uses cross-coupled PMOS transistors and replica bias with coarse/fine control signal. The design implemented in TSMC 90 nm CMOS technology, 0.9V power supply with frequency tuning range 481MHz to 4.08GHz and -94.17dBc/Hz at 1MHz offset from 4.08GHz with 26.15mW power consumption.
29
Chien, Mao-Chuan, and 簡茂全. "A CMOS High-speed Voltage Comparator." Thesis, 2002. http://ndltd.ncl.edu.tw/handle/ub99h5.
Повний текст джерелаАнотація:
碩士逢甲大學
電機工程所
90
This thesis presents a design of an innovational high-speed CMOS voltage comparator. The comparator proposed in this thesis uses a p-type differential pair as input stage to provide more gains which differs from using an n-type differential pair. Furthermore, the comparator makes use of a self-biasing circuit to provide a stable 3.5 V output voltage. This output voltage is not affected by the variations of temperature or supplies. By utilizing the designed circuit, high-speed can be achieved. The designed comparator is fabricated by UMC 0.5mm double-poly, triple-metal, N-well CMOS process. The comparator can achieve less propagation delay time (36 ns), fast response time (41 ns), hysteresis voltage between 5 mV and 11 mV, and low power dissipation (4 mW).
30
Cheng, Chih-Yen, and 鄭志彥. "2.4GHz, Low Voltage CMOS Downconversion Mixer." Thesis, 2004. http://ndltd.ncl.edu.tw/handle/90289325598420371077.
Повний текст джерелаАнотація:
碩士逢甲大學
電子工程所
92
The purpose of the thesis is to design a 2.4GHz low voltage CMOS downconversion mixer. The circuit is designed based on traditional Gilbert Cell structure, such that it can be operated in 0.7V. In low voltage circuit design, conversion gain is often very low, so how to get high gain in low voltage is key point in this work. There are three parts in circuit topology：V-I Converter, Core Gilbert Cell circuit and Negative circuit. The purpose of V-I Converter is to get high Iout/Vin value. We use PMOS common drain amplifier as V-I Converter to replace previous literature’s circuit structure. Core Gilbert Cell circuit use an inductor to replace a current source, so the number of cascade is only one, and it can be operated in 0.7V. In order to improve the conversion gain, we use negative resistor to parallel the load resistor in Core Gilbert Cell circuit. From the simulation results, the proposed circuit has good performance, as compared to that of recent literatures (work in 0.9V~1.2V). Not only the operation frequency is increased but also the supply voltage can be operated in 0.7V. Other performance are described as the following： P1dB 6.987dBm, Conversion gain -10.537dBm, IIP3 24dBm and power consumption is 2.94mW.
31
"Giga-hertz CMOS voltage controlled oscillators." 2001. http://library.cuhk.edu.hk/record=b5890786.
Повний текст джерелаАнотація:
Leung Lai-Kan.Thesis (M.Phil.)--Chinese University of Hong Kong, 2001.
Includes bibliographical references (leaves 131-154).
Abstracts in English and Chinese.
Abstract --- p.i
Acknowledgement --- p.iii
Table of Contents --- p.iv
List of Figures --- p.ix
List of Tables --- p.xv
Chapter Chapter 1 --- Introduction --- p.1
Chapter 1.1 --- Overview --- p.1
Chapter 1.2 --- Objectives --- p.2
Chapter 1.3 --- Thesis Organization --- p.4
Chapter Chapter 2 --- Fundamentals of Voltage Controlled Oscillators --- p.6
Chapter 2.1 --- Definition of Commonly Used Figures of Merit --- p.6
Chapter 2.1.1 --- Cutoff frequency --- p.6
Chapter 2.1.2 --- Center Frequency --- p.8
Chapter 2.1.3 --- Tuning Range --- p.8
Chapter 2.1.4 --- Tuning Sensitivity --- p.8
Chapter 2.1.5 --- Output Power --- p.8
Chapter 2.1.6 --- Power Consumption --- p.9
Chapter 2.1.7 --- Supply Pulling --- p.9
Chapter 2.2 --- Phase Noise --- p.9
Chapter 2.2.1 --- Definition of Phase Noise --- p.9
Chapter 2.2.2 --- Phase Noise Specification --- p.11
Chapter 2.2.3 --- Leeson's formula --- p.12
Chapter 2.2.4 --- Models developed by J. Cranincks and M. Steyaert10 --- p.13
Chapter 2.2.5 --- Linear Time-Variant Phase Noise Model --- p.13
Chapter 2.3 --- Building Blocks of Voltage Controlled Oscillators --- p.17
Chapter 2.3.1 --- FETs --- p.17
Chapter 2.3.2 --- Varactor --- p.18
Chapter 2.3.3 --- Spiral Inductor --- p.21
Chapter 2.3.4 --- Modeling of the Spiral Inductor --- p.24
Chapter 2.3.5 --- Analysis and Simulation --- p.26
Chapter Chapter 3 --- Digital Controlled Oscillator --- p.28
Chapter 3.1 --- Introduction --- p.28
Chapter 3.2 --- General Principle of Oscillation --- p.28
Chapter 3.3 --- Different Oscillator Architectures --- p.30
Chapter 3.3.1 --- Single-ended Ring Oscillator --- p.30
Chapter 3.3.2 --- Differential Ring Oscillator --- p.32
Chapter 3.3.3 --- CMOS Injection-locked Oscillator --- p.33
Chapter 3.4 --- Basic Principle of the Injection-locked Oscillator --- p.34
Chapter 3.5 --- Digital Controlled Oscillator --- p.36
Chapter 3.5.1 --- R-2R Digital-to-Analog Converter --- p.37
Chapter 3.6 --- Injection Locking --- p.42
Chapter 3.6.1 --- Synchronization Model of the Injection Locked Oscillator --- p.42
Chapter 3.7 --- Simulation Results --- p.44
Chapter 3.7.1 --- Frequency Tuning Characteristics --- p.44
Chapter 3.7.2 --- Phase Noise Performance --- p.47
Chapter 3.7.3 --- Locking Characteristics --- p.48
Chapter 3.7.4 --- Sensitivity to Supply Voltage and Temperature --- p.48
Chapter 3.8 --- Conclusion --- p.49
Chapter Chapter 4 --- CMOS LC Voltage Controlled Oscillator --- p.51
Chapter 4.1 --- Introduction --- p.51
Chapter 4.2 --- LC Oscillator --- p.52
Chapter 4.3 --- Circuit Design --- p.54
Chapter 4.3.1 --- Oscillation Frequency --- p.55
Chapter 4.3.2 --- Oscillation Amplitude --- p.58
Chapter 4.3.3 --- Transistor Sizing --- p.59
Chapter 4.3.4 --- Power Consumption --- p.62
Chapter 4.3.5 --- Tuning Range --- p.62
Chapter 4.3.6 --- Phase Noise Analysis --- p.63
Chapter 4.4 --- Conclusion --- p.70
Chapter Chapter 5 --- LC Quadrature Voltage Controlled Oscillator --- p.71
Chapter 5.1 --- Introduction --- p.71
Chapter 5.2 --- Conventional CMOS Quadrature LC Voltage Controlled Oscillator --- p.73
Chapter 5.3 --- Operational Principle of the CMOS Quadrature LC Voltage Controlled Oscillator --- p.74
Chapter 5.3.1 --- General Explanation --- p.74
Chapter 5.3.2 --- Mathematical Analysis --- p.75
Chapter 5.3.3 --- Drawback of the Conventional CMOS LC Quadrature VCO --- p.77
Chapter 5.4 --- Novel CMOS Low Noise Quadrature Voltage Controlled Oscillator --- p.78
Chapter 5.4.1 --- Equivalent Output Noise due to the Coupling Transistor --- p.80
Chapter 5.4.2 --- Linear Time Varying Model for the Analysis of Total Phase Noise --- p.83
Chapter 5.4.3 --- Tuning Range --- p.94
Chapter 5.4.4 --- Start-up Condition --- p.95
Chapter 5.4.5 --- Power Consumption --- p.97
Chapter 5.5 --- New Tuning Mechanism of the Proposed LC Quadrature VCO --- p.98
Chapter 5.6 --- Modified Version of the Proposed LC Quadrature Voltage Controlled Oscillator --- p.105
Chapter 5.7 --- Conclusion --- p.108
Chapter Chapter 6 --- Layout Consideration --- p.109
Chapter 6.1 --- Substrate Contacts --- p.109
Chapter 6.2 --- Guard Rings --- p.110
Chapter 6.3 --- Thermal Noise of the Gate Interconnect --- p.111
Chapter 6.4 --- Use of Different Layers of Metal for Interconnection --- p.112
Chapter 6.5 --- Slicing of Transistors --- p.113
Chapter 6.6 --- Width of Interconnecting Wires and Numbers of Vias --- p.114
Chapter 6.7 --- Matching of Devices --- p.114
Chapter 6.8 --- Die Micrographs of the Prototypes of the Oscillators --- p.115
Chapter Chapter 7 --- Experimental Results --- p.118
Chapter 7.1 --- Methodology --- p.118
Chapter 7.2 --- Evaluation Board --- p.119
Chapter 7.3 --- Measurement Setup --- p.123
Chapter 7.4 --- Experimental Results --- p.125
Chapter 7.4.1 --- CMOS Injection Locked Oscillator --- p.125
Chapter 7.4.2 --- LC Differential Voltage Controlled Oscillator --- p.128
Chapter 7.4.3 --- LC Quadrature Voltage Controlled Oscillator --- p.132
Chapter 7.5 --- Summary of Performance --- p.139
Chapter Chapter 8 --- Conclusion --- p.142
Chapter 8.1 --- Contribution --- p.142
Chapter 8.2 --- Further Development --- p.143
Chapter Chapter 9 --- Appendix --- p.145
Chapter 9.1 --- Circuit Transformation --- p.145
Chapter 9.2 --- Derivation of the Inductor Model with PGS --- p.146
Chapter 9.2.1 --- "Inductance," --- p.146
Chapter 9.2.2 --- "Series Resistance, Rs" --- p.146
Chapter 9.2.3 --- Series Capacitance --- p.147
Chapter 9.2.4 --- Shunt Oxide Capacitance --- p.147
Chapter 9.3 --- Calculation of Phase Noise Using the Linear Time Variant Model --- p.148
Chapter Chapter 10 --- Bibliography --- p.151
32
Sun, Fu-Tsun, and 孫福村. "CMOS Low-Voltage Dual-Band Mixer." Thesis, 2001. http://ndltd.ncl.edu.tw/handle/56173793573324828410.
Повний текст джерелаАнотація:
碩士國立成功大學
電機工程學系
89
Abstract Mixer has been widely used in many communication systems, especially in superheterodyne architecture. In modern communication systems, however, dual-band systems are popular, because mobile telephones are highly available and the consumers require good communication quality. The purpose of this thesis is to investigate a mixer working at dual-band frequency. The concept is to improve original Gilbert mixer for low-voltage supply. By using dual-band frequency resonators, both bands can be mixed, and just use one mixer circuit. The proposed mixer is fabricated with TSMC 0.35 um sp/4m process. The Chip die size is about 3*3 mm2. When testing, RF signal is swept from 0.5 GHz to 2.2 GHz in 100 MHz step. The LO frequency is varied with RF frequency so the IF is fired at 100 MHz.
33
Chiang, Tzung-Yin, and 江宗殷. "Temperature-compensated CMOS voltage reference circuit." Thesis, 2005. http://ndltd.ncl.edu.tw/handle/07003708814603618036.
Повний текст джерелаАнотація:
碩士國立清華大學
工程與系統科學系
93
Reference circuits have been studying for many years. Following the vigorous development of portable electronic products, integrated circuits with low voltage and small area have become the core part of the recent research. Parasitic vertical bipolar junction transistors are commonly used in CMOS voltage reference circuits for a better stability. Recently, MOS reference circuits have been used to replace BJT ones in order to reduce the chip area and supply voltage. Whether BJT or MOS is utilized, the problem that resistances parallelizing on either side of BJT or MOS generally occupy quite large ratio of chip area under the consideration of power consumption and loading parasitic capacitances of op-amp still exists. Another problem worthy of our concern is that spurious signals coming from the supply voltage cannot be adequately rejected and may couple into the circuit to degrade output signal in high frequency applications. This thesis aims to improve the above problems and proposes a novel voltage reference circuit. A current mirror is designed for temperature compensation and large resistors are defeasible for reduction chip area. Besides, it has been implemented by a 0.18 μm CMOS process with a chip area of 0.023 mm2. Simulation shows that the variation of temperature coefficient is from 59.5 to 63.8 ppm/℃ under the temperature range from -40 to 100 ℃ and a supply voltage variation from 1.2 to 1.98 V. The power noise rejection ratio is -70 dB at 10 kHz with 1.2V supply voltage. In summary, the thesis adopts a current mirror to achieve low-temperature-drift reference voltage and abandons large resistances on design consideration. With this approach, power noise rejection ration is reduced.
34
Liu, Zhiyu. "Multi-voltage nanoscale CMOS circuit techniques." 2008. http://www.library.wisc.edu/databases/connect/dissertations.html.
Повний текст джерела
35
Liao, Jia-Zheng, and 廖家正. "Design of A CMOS Reference Voltage." Thesis, 2013. http://ndltd.ncl.edu.tw/handle/3h6nk8.
Повний текст джерелаАнотація:
碩士國立虎尾科技大學
電子工程系碩士班
101
In this thesis, a CMOS differential-mode reference voltage circuit has been proposed. By properly using the positive and negative temperature coefficient parameters, a zero temperature-coefficient can be achieved. The proposed circuits are based on the traditional bandgap voltage reference circuit architecture with an additional current mirror and a proportional-to-absolute-temperature current source which is composed of current mirrors. As compared with the existed differential-mode reference voltage circuit, the proposed circuit does not need an operational amplifier, therefore it benefits from simpler circuit architecture, less chip area, and less power consumption. Besides the detailed design principle, the HSPICE and LAKER simulation program with 0.35-um and 0.18-um process parameters have been used to perform the pre-layout and post-layout simulation. According to the post-layout simulation results, as the supply voltages is 3.3V, the differential-mode output voltage reference circuit shows that, as the temperature varies from -20oC to 120oC, the corresponding output voltage changes only 1.3mV(0.225%), the corresponding power dissipation is 2.354mW and the temperature-coefficient is 16.11 ppm/˚C. In addition, if a transistor and a resistor are removed from the proposed differential-mode output voltage reference circuit, a single-ended mode reference voltage with zero temperature coefficient can be obtained. According to the post-layout simulation results, when the supply voltages is 2.8V, and as the temperature varies from -20oC to 120oC, the corresponding output voltage changes only 2.01mV(0.387%), the corresponding power dissipation is 1.412mW and the temperature-coefficient is 27.79 ppm/˚C. All the simulation results are consistent with the theoretic analysis. The proposed circuits can be applied to different analog circuits.
36
Lee, Chia-Yu, and 李佳祐. "A Low-Voltage Low-Temperature-Coefficient CMOS Bandgap Voltage Reference Generator." Thesis, 2006. http://ndltd.ncl.edu.tw/handle/60462464118919911604.
Повний текст джерелаАнотація:
碩士國立臺灣大學
電子工程學研究所
94
Voltage references play an important role in modern integrated circuits systems. They are widely apdopted in many integrated circuits, such as A/D or D/A converters, power-management system, operational amplifiers, and linear regulators. They are used for defining input/output voltage range, baising current source of differential pairs, and providing a comparison reference for comparators. A precision voltage reference must be, inherently, well-defined and insensitive to temperature, power supply and load variations. The objective of this thesis is to design a bandgap voltage reference with input voltage 1.8V to 3.3V and output voltage around 1.2V. The bandgap voltage reference is intended for using in low dropout linear regulators (LDO). In order to reduce the supply voltage, the voltage reference is using low voltage operational amplifers in place of using conservative cascade current mirror. In addition, this thesis designs a 1-V bandgap voltage reference with temperature compensation to suit the current of low supply voltage. During design and analysis stages, the HSPICE is used for the simulation, modification and verification of the circuit.
37
Chang, Wei-Jen, and 張瑋仁. "High-Voltage-Tolerant ESD Protection Design in Low-Voltage CMOS Processes." Thesis, 2007. http://ndltd.ncl.edu.tw/handle/70232955293959803259.
Повний текст джерелаАнотація:
博士國立交通大學
電子工程系所
96
The scaling trend of the CMOS technology is toward the nanometer region to increase the speed and density of the transistors in integrated circuits. Due to the reliability issue, the power supply voltage is also decreased with the advanced technologies. However, in an electronic system, some circuits could be still operated at high voltage levels. If the circuits realized with low-voltage devices are operated at high voltage levels, the gate-oxide breakdown and leakage issues will occur. Therefore, for the CMOS integrated circuits (ICs) with the mixed-voltage I/O interfaces, the on-chip electrostatic discharge (ESD) protection circuits will meet more design constraints and difficulties. The on-chip ESD protection circuit for mixed-voltage I/O interfaces should meet the gate-oxide reliability constraints and prevent the undesired leakage current paths during normal circuit operating operation. During ESD stress condition, the on-chip ESD protection circuit should provide effective ESD protection for the internal circuits. In high-voltage CMOS technology, high-voltage transistors have been widely used for display driver ICs, power supplies, power management, and automotive electronics. The high-voltage MOSFET was often used as the ESD protection device in the high-voltage CMOS ICs, because it can work as both of output driver and ESD protection device simultaneously. With an ultra-high operating voltage, the ESD robustness of high-voltage MOSFET is quite weaker than that of low-voltage MOSFET. Hence, how to improve the ESD robustness of HV NMOS with a reasonable silicon area is indeed an important reliability issue in HV CMOS technology. In this thesis, some new ESD protection structures are proposed to improve ESD robustness of the high-voltage IC products fabricated in CMOS technology. To protect the mixed-voltage I/O interfaces for signals with voltage levels higher than VDD (over-VDD) and lower than VSS (under-VSS), ESD protection design with the low-voltage-triggered PNP (LVTPNP) device in CMOS technology is proposed. The LVTPNP is realized by inserting N+ or P+ diffusion across the junction between N-well and P-substrate of the PNP device. The LVTPNP devices with different structures have been investigated and compared in CMOS processes. The experimental results in a 0.35-um CMOS process have proven that the ESD level of the proposed LVTPNP is higher than that of the traditional PNP device. Furthermore, layout on LVTPNP device for ESD protection in mixed-voltage I/O interfaces is also optimized in this work. The experimental results verified in both 0.35-um and 0.25-um CMOS processes have proven that the ESD levels of the LVTPNP drawn in the multi-finger layout style are higher than that drawn in the single finger layout style. Moreover, one of the LVTPNP devices drawn with the multi-finger layout style has been used to successfully protect the input stage of an ADSL IC in a 0.25-um salicided CMOS process. To increase the system-on-chip ESD immunity of micro-electronic products against system-level ESD stress, the chip-level ESD/EMC protection design should be enhanced. Considering gate-oxide reliability, a new ESD protection scheme with ESD_BUS and high-voltage-tolerant ESD clamp circuit for 1.2/2.5 V mixed-voltage I/O interfaces is proposed in this chapter. The devices used in the high-voltage-tolerant ESD clamp circuit are all 1.2 V low-voltage NMOS/PMOS devices which can be safely operated under the 2.5 V bias conditions without suffering from the gate-oxide reliability issue. The four-mode (PS, NS, PD, and ND) ESD stresses on the mixed-voltage I/O pad and pin-to-pin ESD stresses can be effectively discharged by the proposed ESD protection scheme. The experimental results verified in a 0.13 um CMOS process have confirmed that the proposed new ESD protection scheme has high human-body-model (HBM) and machine-model (MM) ESD robustness with a fast turn-on speed. The proposed new ESD protection scheme, which is designed with only low-voltage devices, is an excellent and cost-efficient solution to protect mixed-voltage I/O interfaces. To greatly improve ESD robustness of the vacuum-fluorescent-display (VFD) driver IC for automotive electronics applications, a new electrostatic discharge protection structure of high-voltage P-type silicon controlled rectifier (HVPSCR) embedded into the high-voltage PMOS device is proposed. By only adding the additional N+ diffusion into the drain region of high-voltage PMOS, the TLP-measured secondary breakdown current (It2) of output driver has been greatly improved greater than 6A in a 0.5-µm high-voltage CMOS process. Such ESD-enhanced VFD driver IC, which can sustain HBM ESD stress of up to 8kV, has been in mass production for automotive applications in car without latchup problem. Moreover, with device widths of 500um, 600um, and 800um, the MM ESD levels of the HVPSCR are as high as 1100V, 1300V, and 1900V, respectively. The dependences of drift implant and layout parameters on ESD robustness in a 40-V CMOS process have been investigated in silicon chips. From the experimental results, the HV MOSFETs without drift implant in the drain region have better TLP-measured It2 and ESD robustness than those with drift implant in the drain region. Furthermore, the It2 and ESD level of HV MOSFETs can be increased as the layout spacing from the drain diffusion to polygate is increased. It was also demonstrated that a specific test structure of HV n-type silicon controlled rectifier (HVNSCR) embedded into HV NMOS without N-drift implant in the drain region has the excellent TLP-measured It2 and ESD robustness. Moreover, due to the different current distributions in HV NMOS and HVNSCR, the dependences of the TLP-measured It2 and HBM ESD levels on the spacing from the drain diffusion to polygate are different. In this thesis, the novel ESD protection circuits have been developed for mixed-voltage I/O interfaces and high-voltage CMOS process with high ESD robustness. Each of the ESD protection circuits has been successfully verified in the testchips.
38
吳榮田. "Standard CMOS Low Operating Voltage Linear Type Bandgap Reference Voltage Generator." Thesis, 2002. http://ndltd.ncl.edu.tw/handle/35770322350884476361.
Повний текст джерелаАнотація:
碩士國立臺灣大學
電機工程學研究所
90
For many modern analog circuits, it is very important to generate a power supply voltage and temperature independent reference voltage to improve the performance of circuits such as accuracy, reliability, yield rate and so on. In the past the linear type CMOS bandgap reference voltage generator was chosen as a reliable reference voltage source for many years because of its working very well. But the traditional linear type CMOS bandgap reference voltage generator cannot work properly when the power supply voltage is lower than 2V. Due to the progress of CMOS process and the application of ICs, the power supply voltage of many ICs has to be reduced less than 2V in the future. A novel architecture of current summation type linear CMOS bandgap reference voltage generator is proposed here to afford a reliable bandgap reference voltage generating circuit that can operate at 1.3V power supply perfectly.
39
Wu, Ming-Shian, and 吳明憲. "A Linear CMOS Voltage to Current Converter." Thesis, 2005. http://ndltd.ncl.edu.tw/handle/42037852180078379348.
Повний текст джерелаАнотація:
碩士國立雲林科技大學
電子與資訊工程研究所
93
An improved CMOS voltage-to-current converter is presented. PMOS transistors are employed in the resistor-replacement and voltage-level shifting of the proposed converter to avoid the body effect. To accurately annihilate the non-linear voltage terms, a better modeling of the drain-to-source current of the MOS transistor operating in the linear region is essential and is adopted. Specifically the substrate-bias effect of the MOS transistor is treated more thoroughly in our design. Consequently, the non-linearity of the large-signal transresistance of the converter, caused mainly by the body effect of a NMOS transistor in a previously published converter, is greatly minimized. In order to compensate the resultant voltage inversion created by the switching from NMOS transistors to PMOS transistors in the resistor-replacement and voltage-level shifting in the proposed circuit, a voltage-inversion sub-circuit is devised and employed in our converter. The voltage-to-current converter is designed and fabricated in a 0.35μm CMOS technology. The fabricated circuit occupies an area of 267μm×197μm（~0.053mm2） and dissipates less than 3.92mW from a 3.3 V supply. The measured and simulated data are in good agreement. For a 1 input voltage, the total harmonic distortion (THD) of the output current is less than 1.5%.
40
"A low voltage 900 MHz CMOS mixer." 2001. http://library.cuhk.edu.hk/record=b5890834.
Повний текст джерелаАнотація:
by Cheng Wang Chi.Thesis (M.Phil.)--Chinese University of Hong Kong, 2001.
Includes bibliographical references (leaves 108-111).
Abstracts in English and Chinese.
Abstract --- p.i
摘要 --- p.iii
Acknowledgments --- p.v
Contents --- p.vii
List of Tables --- p.xiii
List of Figures --- p.xiv
Chapter Chapter1 --- Introduction --- p.1
Chapter 1.1 --- Motivation --- p.1
Chapter 1.2 --- Technical Challenges of CMOS RF Design --- p.2
Chapter 1.3 --- General Background --- p.2
Chapter 1.3.1 --- Bipolar and CMOS Mixers --- p.4
Chapter 1.4 --- Research Goal --- p.4
Chapter 1.5 --- Thesis Outline --- p.5
Chapter Chapter2 --- RF Fundamentals --- p.6
Chapter 2.1 --- Introduction --- p.6
Chapter 2.2 --- Frequency Translation --- p.6
Chapter 2.3 --- Conversion Gain --- p.8
Chapter 2.4 --- Linearity --- p.8
Chapter 2.4.1 --- 1-dB Compression Point --- p.11
Chapter 2.4.2 --- Third Intercept Point (IP3) --- p.11
Chapter 2.5 --- Dynamic Range (DR) --- p.13
Chapter 2.5.1 --- Spurious-Free Dynamic Range (SFDR) --- p.13
Chapter 2.5.2 --- Blocking Dynamic Range (BDR) --- p.14
Chapter 2.6 --- Blocking and Desensitization --- p.15
Chapter 2.7 --- Port-to-Port Isolation --- p.15
Chapter 2.8 --- Single-Balanced and Double-Balanced Mixers --- p.16
Chapter 2.9 --- Noise --- p.16
Chapter 2.9.1 --- Noise in the Local Oscillator --- p.17
Chapter 2.9.2 --- Noise Figure --- p.18
Chapter Chapter3 --- Downconversion Mixer --- p.19
Chapter 3.1 --- Introduction --- p.19
Chapter 3.2 --- Review of Mixer Topology --- p.19
Chapter 3.2.1 --- Square-Law Mixer --- p.20
Chapter 3.2.2 --- CMOS Gilbert Cell --- p.21
Chapter 3.2.3 --- Potentiometric Mixer --- p.22
Chapter 3.2.4 --- Subsampling Mixer --- p.23
Chapter Chapter4 --- Proposed Downconversion Mixer --- p.24
Chapter 4.1 --- Analysis of Proposal Mixer --- p.24
Chapter 4.2 --- Current Folded Mirror Mixer --- p.24
Chapter 4.2.1 --- Operating Principle --- p.25
Chapter 4.2.2 --- Large Signal Analysis --- p.26
Chapter 4.2.3 --- Small Signal Analysis --- p.29
Chapter 4.3 --- Current Mode Mixer --- p.32
Chapter 4.3.1 --- Operating Principle --- p.33
Chapter 4.3.2 --- Large Signal Analysis --- p.33
Chapter 4.3.3 --- Small Signal Analysis --- p.34
Chapter 4.3.4 --- V-I Converter --- p.36
Chapter 4.3.4.1 --- Equation Analysis --- p.37
Chapter 4.4 --- Second Order Effects --- p.38
Chapter 4.4.1 --- Device Mismatch --- p.38
Chapter 4.4.2 --- Body Effect --- p.39
Chapter 4.5 --- Single-ended to Differential-ended converter --- p.39
Chapter 4.6 --- Output Buffer Stage --- p.40
Chapter 4.7 --- Noise Theory --- p.41
Chapter 4.7.1 --- SSB and DSB Noise Figure --- p.42
Chapter 4.7.2 --- Noise Figure --- p.43
Chapter Chapter5 --- Simulation Results --- p.44
Chapter 5.1 --- Introduction --- p.44
Chapter 5.2 --- Current Folded Mirror Mixer --- p.44
Chapter 5.2.1 --- Conversion Gain --- p.45
Chapter 5.2.2 --- Linearity --- p.46
Chapter 5.2.2.1 --- 1dB Compression Point and IIP3 --- p.49
Chapter 5.2.3 --- Output Buffer Stage --- p.49
Chapter 5.3 --- Current Mode Mixer --- p.51
Chapter 5.3.1 --- Conversion Gain --- p.51
Chapter 5.3.2 --- Linearity --- p.52
Chapter 5.3.2.1 --- 1-dB Compression Point and IIP3 --- p.52
Chapter 5.3.3 --- Output Buffer Stage --- p.53
Chapter 5.3.4 --- V-I Converter --- p.54
Chapter 5.4 --- Single-ended to Differential-ended Converter --- p.55
Chapter Chapter6 --- Layout Consideration --- p.57
Chapter 6.1 --- Introduction --- p.57
Chapter 6.2 --- CMOS transistor Layout --- p.57
Chapter 6.3 --- Resistor Layout --- p.59
Chapter 6.4 --- Capacitor Layout --- p.60
Chapter 6.5 --- Substrate Tap --- p.62
Chapter 6.6 --- Pad Layout --- p.63
Chapter 6.7 --- Analog Cell Layout --- p.64
Chapter Chapter7 --- Measurements --- p.65
Chapter 7.1 --- Introduction --- p.65
Chapter 7.2 --- Downconversion mixer --- p.66
Chapter 7.3 --- PCB Layout --- p.66
Chapter 7.4 --- Test Setups --- p.68
Chapter 7.4.1 --- Measurement Setup for S-Parameter --- p.68
Chapter 7.4.2 --- Measurement Setup for 1-dB Compression Point and IIP3 --- p.70
Chapter 7.5 --- Measurement Result of the Current Folded Mirror Mixer --- p.72
Chapter 7.5.1 --- S-Parameter Measurement --- p.75
Chapter 7.5.2 --- Conversion Gain and the Effect of the IF Variation --- p.77
Chapter 7.5.3 --- 1-dB Compression Point --- p.78
Chapter 7.5.4 --- IIP3 --- p.79
Chapter 7.5.5 --- LO Power Effect to the Mixer --- p.81
Chapter 7.5.6 --- Performance Summaries of the Current Folded Mirror Mixer --- p.82
Chapter 7.5.7 --- Discussion --- p.83
Chapter 7.6 --- Measurement Result of the Current Mode Mixer --- p.84
Chapter 7.6.1 --- S-Parameter Measurement --- p.87
Chapter 7.6.2 --- Conversion Gain and the Effect of the IF Variation --- p.89
Chapter 7.6.3 --- 1-dB Compression Point --- p.90
Chapter 7.6.4 --- IIP3 --- p.91
Chapter 7.6.5 --- LO Power Effect to the Mixer --- p.93
Chapter 7.6.6 --- Performance Summaries of the Current Mode Mixer --- p.94
Chapter 7.6.7 --- Discussion --- p.95
Chapter 7.7 --- Measurement Result of the Single-ended to Differential-ended converter --- p.96
Chapter 7.7.1 --- Measurement Setup for the Phase Difference --- p.97
Chapter 7.7.2 --- Phase Difference Measurement --- p.98
Chapter 7.7.3 --- Discussion --- p.99
Chapter Chapter8 --- Conclusion --- p.100
Chapter Appendix A --- Characteristics of the Gilbert Quad Pair --- p.102
Chapter A.1 --- Large-Signal Analysis --- p.102
Chapter Appendix B --- Characteristics of the V-I Converter --- p.105
Chapter B.1 --- Large-Signal Analysis --- p.105
Bibliography --- p.108
41
Yang, Julian, and 楊宙穎. "CMOS Temperature Sensor and Bandgap Voltage Reference." Thesis, 2004. http://ndltd.ncl.edu.tw/handle/64563h.
Повний текст джерелаАнотація:
碩士國立交通大學
電子物理系所
92
A temperature sensing system with digital output consists of a front part and a rear part. The front part includes temperature sensor and bandgap voltage reference. The rear part is an analog to digital converter (ADC). In CMOS technology, the BJT device is used as the basic temperature sensor. The base-emitter voltage (VEB) can be approximated as a linear function of temperature. By using it, temperature sensor and bandgap voltage reference can be accomplished. The simulation of the front part using a standard TSMC 0.25um 1P5M CMOS process is presented in the thesis. The designed PTAT (Proportional To Absolute Temperature) circuit has an output voltage in proportion to absolute temperature with 3.6mV / ℃. The reference voltage (Vref) is 1.21V with an effective temperature coefficient of 8.3 ppm/℃ from -25℃~125℃. Further more, A new type of bandgap voltage reference, in the form of , is proposed. We expand VEB(T) into Taylor series. After second-order compensation with one scaling factor a1=1 and a2 =-0.79, we will get a third-order temperature dependency of bandgap voltage reference. With current mode topology, the circuits design achieves a second-order compensation of VEB. It is simulated with the models of standard TSMC 0.18um 1P6M process. From simulation, the output voltage is 255mV with an effective temperature coefficient of 7.8 ppm/℃ for the temperature range -40℃~125℃. Total current consumption is about 408uA and power consumption is about 0.73mW at 25℃ for this proposed circuit.
42
Chang, Ting-Wei, and 張庭瑋. "CMOS current reference and voltage reference design." Thesis, 2006. http://ndltd.ncl.edu.tw/handle/53278481139150247466.
Повний текст джерелаАнотація:
碩士北台科學技術學院
機電整合研究所
94
This paper presents some new circuits including CMOS circuit reference and voltage reference. The architecture of the current references is produced not only by adding a positive supply voltage coefficient current reference and a negative supply voltage coefficient current reference to cancel out the supply voltage variations but also by adding a positive temperature coefficient current reference and a negative temperature coefficient current reference to cancel out the temperature variation. About the negative supply voltage coefficient current reference, we can product it by subtracting two current references with different positive supply voltage coefficient. This paper also presents a sub-1v voltage reference, which is different from the traditional bandgap reference. The main architecture of the voltage reference is composed of a positive temperature coefficient voltage reference and a negative temperature coefficient voltage reference. At first, by putting two different bias voltage of the bipolar junction transistors into the differential pair and adjusting the transistor size, we can obtain a voltage reference with a positive temperature coefficient; Secondly, by putting a ground voltage and a bias voltage of the bipolar junction transistors into the differential pair and adjusting the transistor size, we can obtain a voltage reference with a negative temperature coefficient. Finally, by putting the positive coefficient voltage reference and the negative temperature coefficient voltage reference into the differential pair and adjusting the transistor size, we can obtain a voltage reference with less sensitive to temperature variation.
43
Tseng, Po-Ying, and 曾柏穎. "A 1.9 GHz CMOS LOW VOLTAGE MIXER." Thesis, 2000. http://ndltd.ncl.edu.tw/handle/37565549430170601692.
Повний текст джерелаАнотація:
碩士大同大學
電機工程研究所
88
In recent years, personal communications system (PCS) is a hot topic. With the channel length of CMOS transistor scaling down year by year, CMOS RF-ICs are practical today. In this paper we report an integrated RF circuit topology that can be used to realize low voltage RF integrated circuits. The scheme uses on-chip capacitively coupled resonating elements to dc isolate circuit elements that under the present art are connected in series and share a common dc current. We use classical Gilbert cell mixer with 0.35μm CMOS process to realize this topology. Finally a comparison is made between a low-voltage version of the Gilbert cell mixer and the classical Gilbert cell mixer.
44
Wang, Li Yueh, and 王麗月. "A low voltage 900MHz CMOS RF receiver." Thesis, 1999. http://ndltd.ncl.edu.tw/handle/70929662516083788096.
Повний текст джерелаАнотація:
碩士國立中正大學
電機工程研究所
87
In this thesis, the design methodology and implementation techniques of CMOS RF receiver front-end circuits are presented, and this receiver is applied in the 902MHz~928MHz ISM band. The RF front-end receiver consists of a low-noise amplifier(LNA), a down-conversion mixer and a local oscillator(LO). The LNA was implemented by using single-ended and two-stage amplifying circuitry. The measured forward gain(S21) of the LNA is around 12dB at 900MHz, and its noise figure is around 10dB. The 1dB compression point and output 3dB intercept point (OIP3) are -11.1dBm and -4.6dB, respectively. In order to reduce the off-chip RF baluns, the down-conversion mixer was implemented by using a single-ended RF input. This mixer has -7 dB conversion gain at a frequency of 900MHz with an input LO power of 0dBm. The 1dB compression point is -7dBm. In the local oscillator design, we realized a voltage-controlled oscillator(VCO). It was implemented by cascading delay elements which was designed by differential-pair circuitry. It can generate an output signal of 1.7GHz. It has a phase noise of -84.27dBc/Hz at 100KHz from the 900MHz carrier. The proposed RF receiver was fabricated by using the TSMC 0.6um single-poly-triple-metal CMOS technology. The power consumption of our receiver chip is 70mW at a supply voltage of 2.2V.
45
Chang, Ching-Che, and 張景喆. "Low Actuation Voltage Lateral CMOS MEMS Switch." Thesis, 2012. http://ndltd.ncl.edu.tw/handle/57897696373615005962.
Повний текст джерелаАнотація:
碩士國立交通大學
電子研究所
100
Because CMOS switch has low efficiencies in high frequency system, the application of MEMS switch in high frequency system is the trend in the recent years. CIC offers a new CMOS MEMS technology now, the MEMS structure can be combined with the electronic circuit by this process. The thesis presents the MEMS switch is the design of the new process and application for the high frequency system. The electronic circuit is combined with the chip, and then discussed the etching of substrate how to affect the electronic circuit. The circuit is fabricated by TSMC 0.18μm CMOS process with the MEMS post - process. The chip has an extra RLS mask compare to the traditional CMOS process. The CMOS MEMS is imperfect now. The etching can only hollow out the substrate and let the metal and the SiO2 structure to float. And the material of metal has only Aluminum and Gold. The choice of design in CMOS MEMS is less than traditional MEMS process. The aim is trying to design a CMOS MEMS switch that is limited by the etching and application for RF system.
46
Louh, Shieng-Tai, and 陸湘台. "Fabrication and Simulation of High-Voltage CMOS." Thesis, 1999. http://ndltd.ncl.edu.tw/handle/03150063439793335229.
Повний текст джерелаАнотація:
碩士國立交通大學
電子工程系
87
This thesis focuses on fabrication and simulation of high-voltage CMOS devices. Based on Standard low-voltage CMOS fabrication process recipes, and with specific additive process steps onto high-voltage CMOS without affecting any low-voltage CMOS characteristics. This makes combining both low-voltage devices and high-voltage devices on a chip possible. This combination is not only increasing the range of its applications but also meet the requirement of the circuit designer uptodate. Mask counting and layout decision is the first step to high-voltage device design. After its layout and its masks, we use process simulator to have recipes on it. Finally go to device simulator to get reasonable electrical characteristics that can be operate in circuits.
47
Chi, Hong-Sian, and 紀宏憲. "Design of CMOS Quadrature Voltage Controlled Oscillator." Thesis, 2014. http://ndltd.ncl.edu.tw/handle/90871257096219940335.
Повний текст джерелаАнотація:
碩士國立勤益科技大學
電子工程系
102
A rapid oscillator design approach is proposed in this thesis. By using the rapid oscillator design approach, three CMOS Quadrature Voltage Controlled Oscillator (QVCO) are proposed, and to compare with five previous works. Based on TSMC CMOS 1P6M 0.18um standard process technology with supply voltage 1.8V, Spectre-RF and HSPICE are used to perform simulation on five previous QVCOs and three proposed QVCOs. Proposed Type-Ⅰ, Type-Ⅱ and Type-Ⅲ QVCO schemes have significantly decreased phase noise (Pnoise), which are -167.05 dBc/Hz, -172.84 dBc/Hz and 177.94 dBc/Hz at 1 MHz offset frequency, respectively. Type-Ⅲ has the best FoM (Figure of Merit) to be -227.46 dBc/Hz. The oscillation frequency of QVCO schemes has ranging from 750MHz to 1.15GHz as the control voltage adjusted from 0V to 1.8V.
48
Cai, Bo-Rong, and 蔡柏戎. "Design And application Of CMOS Reference Voltage." Thesis, 2014. http://ndltd.ncl.edu.tw/handle/4r55n9.
Повний текст джерелаАнотація:
碩士國立虎尾科技大學
電子工程系碩士班
102
In this thesis, a differential-mode reference voltage circuit with cascode architecture has been proposed. The design principle is using both the positive and the negative temperature coefficient parameters in BJT to compensate each other, and then a zero temperature coefficient output reference voltage can be achieved. Circuit simulations has used two different circuit architectures to realize the reference voltage, and both the advantages and disadvantages have been discussed. As compared with the existed differential mode reference voltage circuits, the proposed circuits benefits from simpler circuit architecture, less chip area, and also they don''t need any operational amplifier . Detailed design principle has been disclosed in this thesis, also the HSPICE and LAKER simulation programs with 0.35-μm process parameters have been used to perform the pre-layout and post-layout simulation. The supply voltages of the proposed circuits are 3.3V and 5V, respectively. The test temperature ranges from -20°C to 120°C. According to the simulation results, the double-cascode architecture can enhance the PSRR. When the supply voltage is 3.3V and the temperature is 25°C, the output voltage of the proposed cascode architecture reference voltage circuit is 426.2mv, the maximum output voltage variation is 1.37mv, the power dissipation is 0.5149mW, and the corresponding PSRR is -27.52dB. As the supply voltage is 5V and the temperature is 25°C, the output voltage of the proposed double-cascode architecture reference voltage circuit is 500.27mv, the maximum output voltage variation is only 1.0236mv, the power dissipation is 0.96502mW, and the corresponding PSRR is -45dB. All the simulation results are consistent with the theoretic analysis. The proposed circuits can be applied to vehicle electronic devices design and other digital and analog circuits.
49
Wang, Bo-Lun, and 王柏倫. "Design of CMOS Low-Power Reference Voltage." Thesis, 2017. http://ndltd.ncl.edu.tw/handle/zwuwk7.
Повний текст джерелаАнотація:
碩士國立虎尾科技大學
電子工程系碩士班
105
In this thesis, three Low-Power CMOS Reference Voltage circuits have been presented. The first circuit is with single-ended output voltage, and the second and third circuit provides multiple output voltages. In the proposed circuits, MOS transistors are biased to operate in the weak inversion region to achieve the low-power consumption characteristics. Appropriate combination of the positive and the negative temperature coefficients of the voltages, the zero-temperature coefficient reference voltage can be achieved. As compared with the existed circuits, the proposed circuits benefits from its low power consumption, simple structure, and less wafer area. In this thesis, both the pre/post layout simulation and measurement results with 0.18m and 0.35m process parameters are given to show the validity of the proposed circuits. The proposed circuits can be applied to embedded medical instruments and portable electronic devices.
50
Liao, Ying-Hsiang, та 廖英翔. "Design of Low Voltage Voltage-Controlled Oscillators in CMOS 0.18 μm Process". Thesis, 2010. http://ndltd.ncl.edu.tw/handle/06418843147748077846.
Повний текст джерелаАнотація:
碩士國立臺灣科技大學
電子工程系
98
In wireless communication system, frequency synthesizers are used to implement the frequency up/down converting of signal. In a frequency synthesizer, voltage-controlled oscillator (VCO) and frequency divider are the key blocks. For VCOs, low phase-noise output is required to avoid corrupting the mixer-converted signal by close interfering tones. The frequency of output signal of VCO is divided down to the level of reference signal, and is compared with reference signal by a phase frequency detector (PFD) to adjust the output of VCO. Therefore the dividers must have the ability of high frequency operation. Because of wireless application, both of them should operate at low power consumption. This thesis proposes two VCOs. The first VCO is a self-injection-locked Armstrong oscillator. The second is a Hartley type dual resonance oscillator. The above circuits are fabricated in the TSMC 0.18 μm CMOS process. Firstly, we propose an Armstrong voltage controlled oscillator using self-injection-locked technique. The oscillating frequency of the VCO can be tuned from 6.42 GHz to 7.58 GHz while the tuning voltage varies from 0 V to 2 V. The phase noise of the oscillation frequency at 7.45 GHz is -110.9 dBc/Hz at 1 MHz frequency offset. Secondly, we present an n-type Hartley oscillator with dual resonance. The high band tuning voltage varies from 0V to 0.8V, the oscillation frequency tuning range can be tuned from 6.36GHz to 7.09GHz; the low band tuning voltage is from 0.9V to 1.8V, and the tuning frequency ranges from 2.12GHz to 2.32GHz. The high band and low band each has a phase noise respectively of -116.74 dBc/Hz and -124.71 dBc/Hz at 1 MHz frequency offset.