Статті в журналах з теми "CMOS interface"
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Ознайомтеся з топ-50 статей у журналах для дослідження на тему "CMOS interface".
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Lau, K. T., W. Y. Wang, and K. W. Ng. "Adiabatic-CMOS/CMOS-adiabatic logic interface circuit." International Journal of Electronics 87, no. 1 (January 2000): 27–32. http://dx.doi.org/10.1080/002072100132417.
Повний текст джерелаGhoshal, U., S. V. Kishore, A. R. Feldman, Luong Huynh, and T. Van Duzer. "CMOS amplifier designs for Josephson-CMOS interface circuits." IEEE Transactions on Appiled Superconductivity 5, no. 2 (June 1995): 2640–43. http://dx.doi.org/10.1109/77.403132.
Повний текст джерелаWei, Daniel, Stephen R. Whiteley, Lizhen Zheng, Heejoung Park, Hoki Kim, and Theodore Van Duzer. "New Josephson-CMOS Interface Amplifier." IEEE Transactions on Applied Superconductivity 21, no. 3 (June 2011): 805–8. http://dx.doi.org/10.1109/tasc.2010.2088358.
Повний текст джерелаTakagi, Shinichi, Sanjeewa Dissanayake, and Mitsuru Takenaka. "High Mobility Ge-Based CMOS Device Technologies." Key Engineering Materials 470 (February 2011): 1–7. http://dx.doi.org/10.4028/www.scientific.net/kem.470.1.
Повний текст джерелаWu, Xiang, and Fang Ming Deng. "A Capacitive Humidity Sensor for Low-Cost Low-Power Application." Applied Mechanics and Materials 556-562 (May 2014): 1847–51. http://dx.doi.org/10.4028/www.scientific.net/amm.556-562.1847.
Повний текст джерелаChen, Wei Ping, Chang Chun Dong, Xiao Wei Liu, and Zhi Ping Zhou. "A Miniature Fluxgate Sensor with CMOS Interface Circuitry." Key Engineering Materials 483 (June 2011): 164–68. http://dx.doi.org/10.4028/www.scientific.net/kem.483.164.
Повний текст джерелаCivardi, L., U. Gatti, F. Maloberti, and G. Torelli. "An integrated CMOS interface for lambda sensor." IEEE Transactions on Vehicular Technology 43, no. 1 (1994): 40–46. http://dx.doi.org/10.1109/25.282264.
Повний текст джерелаSchubert, M. "70V-to-5V differential CMOS input interface." Electronics Letters 30, no. 4 (February 17, 1994): 296–97. http://dx.doi.org/10.1049/el:19940235.
Повний текст джерелаObaid, Abdulmalik, Mina-Elraheb Hanna, Yu-Wei Wu, Mihaly Kollo, Romeo Racz, Matthew R. Angle, Jan Müller, et al. "Massively parallel microwire arrays integrated with CMOS chips for neural recording." Science Advances 6, no. 12 (March 2020): eaay2789. http://dx.doi.org/10.1126/sciadv.aay2789.
Повний текст джерелаDeng, Fang Ming, and Yi Gang He. "A Low-Cost Low-Power Capacitive Humidity Sensor in CMOS Technology." Applied Mechanics and Materials 556-562 (May 2014): 1842–46. http://dx.doi.org/10.4028/www.scientific.net/amm.556-562.1842.
Повний текст джерелаTerutsuki, Daigo, Hidefumi Mitsuno, Takeshi Sakurai, Yuki Okamoto, Agnès Tixier-Mita, Hiroshi Toshiyoshi, Yoshio Mita, and Ryohei Kanzaki. "Increasing cell–device adherence using cultured insect cells for receptor-based biosensors." Royal Society Open Science 5, no. 3 (March 2018): 172366. http://dx.doi.org/10.1098/rsos.172366.
Повний текст джерелаZhang, Mingrui, Mitchell Adkins, and Zhe Wang. "Recent Progress on Semiconductor-Interface Facing Clinical Biosensing." Sensors 21, no. 10 (May 16, 2021): 3467. http://dx.doi.org/10.3390/s21103467.
Повний текст джерелаHoussa, Michel, Evgueni Chagarov, and Andrew Kummel. "Surface Defects and Passivation of Ge and III–V Interfaces." MRS Bulletin 34, no. 7 (July 2009): 504–13. http://dx.doi.org/10.1557/mrs2009.138.
Повний текст джерелаXu, Hua, and Zhe Qiao. "A Low Noise CMOS Digital Output Interface Circuit." Advanced Materials Research 1049-1050 (October 2014): 653–56. http://dx.doi.org/10.4028/www.scientific.net/amr.1049-1050.653.
Повний текст джерелаKayastha, Shrijandra Nath. "Interfacing C328 CMOS camera with an ATMega32L microcontroller." Journal of Science and Engineering 1 (February 1, 2012): 38–42. http://dx.doi.org/10.3126/jsce.v1i0.22492.
Повний текст джерелаBoni, Andrea, Michele Caselli, Alessandro Magnanini, and Matteo Tonelli. "CMOS Interface Circuits for High-Voltage Automotive Signals." Electronics 11, no. 6 (March 21, 2022): 971. http://dx.doi.org/10.3390/electronics11060971.
Повний текст джерелаTOKUDA, Takashi, Hiroaki TAKEHARA, Toshihiko NODA, Kiyotaka SASAGAWA, and Jun OHTA. "CMOS-Based Optoelectronic On-Chip Neural Interface Device." IEICE Transactions on Electronics E99.C, no. 2 (2016): 165–72. http://dx.doi.org/10.1587/transele.e99.c.165.
Повний текст джерелаTokuda, Takashi, Hiroshi Kimura, Yosmongkol Sawadsaringkarn, Yasuyo Maezawa, Arata Nakajima, Takuma Kobayashi, Toshihiko Noda, Kiyotaka Sasagawa, and Jun Ohta. "CMOS-based intelligent neural interface device for optogenetics." Neuroscience Research 71 (September 2011): e307-e308. http://dx.doi.org/10.1016/j.neures.2011.07.1341.
Повний текст джерелаCellere, G., M. G. Valentini, and A. Paccagnella. "Plasma-induced Si/SiO2 interface damage in CMOS." Microelectronic Engineering 63, no. 4 (September 2002): 433–42. http://dx.doi.org/10.1016/s0167-9317(02)00594-4.
Повний текст джерелаTsukada, Keiji, Takuya Maruizumi, and Hiroyuki Miyagi. "A multiple-ISFET integrated with CMOS interface circuits." Electronics and Communications in Japan (Part II: Electronics) 71, no. 12 (1988): 93–99. http://dx.doi.org/10.1002/ecjb.4420711211.
Повний текст джерелаStrukov, Dmitri B., and Konstantin K. Likharev. "Defect-Tolerant Architectures for Nanoelectronic Crossbar Memories." Journal of Nanoscience and Nanotechnology 7, no. 1 (January 1, 2007): 151–67. http://dx.doi.org/10.1166/jnn.2007.18012.
Повний текст джерелаGignac, L. M., and K. P. Rodbell. "Metal Microstructures in Advanced CMOS Devices." Proceedings, annual meeting, Electron Microscopy Society of America 54 (August 11, 1996): 358–59. http://dx.doi.org/10.1017/s0424820100164258.
Повний текст джерелаYang, Ping Xian, Zhen Bao Liu, and Tao Jin. "Research on Driver Design for CMOS Image Sensor Based on DM642." Applied Mechanics and Materials 321-324 (June 2013): 994–97. http://dx.doi.org/10.4028/www.scientific.net/amm.321-324.994.
Повний текст джерелаWong, Hei, Jieqiong Zhang, Hiroshi Iwai, and Kuniyuki Kakushima. "Characteristic Variabilities of Subnanometer EOT La2O3 Gate Dielectric Film of Nano CMOS Devices." Nanomaterials 11, no. 8 (August 20, 2021): 2118. http://dx.doi.org/10.3390/nano11082118.
Повний текст джерелаSteyaert, M. S. J., W. Bijker, P. Vorenkamp, and J. Sevenhans. "ECL-CMOS and CMOS-ECL interface in 1.2- mu m CMOS for 150-MHz digital ECL data transmission systems." IEEE Journal of Solid-State Circuits 26, no. 1 (1991): 18–24. http://dx.doi.org/10.1109/4.65705.
Повний текст джерелаHaggag, Amr, William McMahon, Karl Hess, Björn Fischer, and Leonard F. Register. "Impact of Scaling on CMOS Chip Failure Rate, and Design Rules for Hot Carrier Reliability." VLSI Design 13, no. 1-4 (January 1, 2001): 111–15. http://dx.doi.org/10.1155/2001/90787.
Повний текст джерелаHeinssen, Sascha, Theodor Hillebrand, Maike Taddiken, Steffen Paul, and Dagmar Peters-Drolshagen. "On-Line Error Correction in Sensor Interface Circuits by Using Adaptive Filtering and Digital Calibration." Proceedings 2, no. 13 (November 30, 2018): 963. http://dx.doi.org/10.3390/proceedings2130963.
Повний текст джерелаLi, Xiangyu, Jianping Hu, and Xiaowei Liu. "Study of a closed-loop high-precision front-end circuit for tunneling magneto-resistance sensors." Modern Physics Letters B 33, no. 08 (March 20, 2019): 1950085. http://dx.doi.org/10.1142/s0217984919500854.
Повний текст джерелаRen, Ming Yuan, Xiao Wei Liu, Hai Feng Zhang, and Zhi Gang Mao. "High Resolution Micro-Displacement Sensing Circuit for Rotor Micro-Gyroscope." Key Engineering Materials 645-646 (May 2015): 538–42. http://dx.doi.org/10.4028/www.scientific.net/kem.645-646.538.
Повний текст джерелаLi, Xiangyu, Liang Yin, Weiping Chen, Zhiqiang Gao, and Xiaowei Liu. "A high-resolution tunneling magneto-resistance sensor interface circuit." Modern Physics Letters B 31, no. 04 (February 10, 2017): 1750030. http://dx.doi.org/10.1142/s0217984917500300.
Повний текст джерелаRen, Mingyuan, Honghai Xu, Xiaowei Han, Changchun Dong, and Xuebin Lu. "Low Noise Interface ASIC of Micro Gyroscope with Ball-disc Rotor." Sensors 20, no. 4 (February 24, 2020): 1238. http://dx.doi.org/10.3390/s20041238.
Повний текст джерелаZhang, Cheng, and Kofi A. A. Makinwa. "Interface Electronics for a CMOS Electrothermal Frequency-Locked-Loop." IEEE Journal of Solid-State Circuits 43, no. 7 (July 2008): 1603–8. http://dx.doi.org/10.1109/jssc.2008.922405.
Повний текст джерелаMansoorian, B., V. Ozguz, and S. Esener. "Diode-biased AC-coupled ECL-to-CMOS interface circuit." IEEE Journal of Solid-State Circuits 28, no. 3 (March 1993): 397–99. http://dx.doi.org/10.1109/4.210011.
Повний текст джерелаHageman, Kristin N., Zaven K. Kalayjian, Francisco Tejada, Bryce Chiang, Mehdi A. Rahman, Gene Y. Fridman, Chenkai Dai, et al. "A CMOS Neural Interface for a Multichannel Vestibular Prosthesis." IEEE Transactions on Biomedical Circuits and Systems 10, no. 2 (April 2016): 269–79. http://dx.doi.org/10.1109/tbcas.2015.2409797.
Повний текст джерелаShi, Zhan, Zhenan Tang, Chong Feng, and Hong Cai. "Improvement to the signaling interface for CMOS pixel sensors." Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 832 (October 2016): 77–84. http://dx.doi.org/10.1016/j.nima.2016.06.012.
Повний текст джерелаDong, Chang Chun, and Zhan Peng Jiang. "Noise Analysis and Characterization of a CMOS Interface Circuit for Fluxgate Sensor." Advanced Materials Research 981 (July 2014): 107–10. http://dx.doi.org/10.4028/www.scientific.net/amr.981.107.
Повний текст джерелаGuo, Jing Jing, Xiao Jing Xu, and Jin Tao Kang. "A Design of Image Acquisition System Based on FPGA and USB2.0." Applied Mechanics and Materials 552 (June 2014): 155–60. http://dx.doi.org/10.4028/www.scientific.net/amm.552.155.
Повний текст джерелаIdris, Muhammad I., Ming Hung Weng, H. K. Chan, A. E. Murphy, Dave A. Smith, R. A. R. Young, Ewan P. Ramsay, David T. Clark, Nick G. Wright, and Alton B. Horsfall. "Electrical Stability Impact of Gate Oxide in Channel Implanted SiC NMOS and PMOS Transistors." Materials Science Forum 897 (May 2017): 513–16. http://dx.doi.org/10.4028/www.scientific.net/msf.897.513.
Повний текст джерелаZhang, Yu, and Chun Yang Wang. "The Design of Image Acquisition System Based on CMOS Image Sensor USB Interface." Applied Mechanics and Materials 602-605 (August 2014): 2756–60. http://dx.doi.org/10.4028/www.scientific.net/amm.602-605.2756.
Повний текст джерелаHu, Zhi Yu, and Li Li. "The Design of Image Acquisition System Based on CMOS Image Sensor USB Interface." Advanced Materials Research 989-994 (July 2014): 3861–64. http://dx.doi.org/10.4028/www.scientific.net/amr.989-994.3861.
Повний текст джерелаJeon, Hyuntak, Injun Choi, Soon-Jae Kweon, and Minkyu Je. "A Power-Efficient Radiation Sensor Interface with a Peak-Triggered Sampling Scheme for Mobile Dosimeters." Sensors 20, no. 11 (June 7, 2020): 3255. http://dx.doi.org/10.3390/s20113255.
Повний текст джерелаZhan, Yongzheng, Tuo Li, Yuqiu Yue, Tongqiang Liu, Yulong Zhou, and Xiaofeng Zou. "Low-power 25Gb/s 16:1 Multiplexer for 400Gb/s Ethernet PHY." Journal of Physics: Conference Series 2083, no. 2 (November 1, 2021): 022032. http://dx.doi.org/10.1088/1742-6596/2083/2/022032.
Повний текст джерелаYang, Min-Jae, Eun-Jung Yoon, and Chong-Gun Yu. "A CMOS Interface Circuit for Vibrational Energy Harvesting with MPPT Control." Journal of IKEEE 20, no. 1 (March 31, 2016): 45–53. http://dx.doi.org/10.7471/ikeee.2016.20.1.045.
Повний текст джерелаOKTYABRSKY, SERGE, MICHAEL YAKIMOV, VADIM TOKRANOV, RAMA KAMBHAMPATI, HASSARAM BAKHRU, SERGEI KOVESHNIKOV, WILMAN TSAI, FENG ZHU, and JACK LEE. "CHALLENGES AND PROGRESS IN III-V MOSFETs FOR CMOS CIRCUITS." International Journal of High Speed Electronics and Systems 18, no. 04 (December 2008): 761–72. http://dx.doi.org/10.1142/s0129156408005746.
Повний текст джерелаDei, Michele, Joan Aymerich, Massimo Piotto, Paolo Bruschi, Francisco del Campo, and Francesc Serra-Graells. "CMOS Interfaces for Internet-of-Wearables Electrochemical Sensors: Trends and Challenges." Electronics 8, no. 2 (January 31, 2019): 150. http://dx.doi.org/10.3390/electronics8020150.
Повний текст джерелаZhang, Jie Qiong, Dan Qun Yu, Hei Wong, Kuniyuki Kakushima, and Hiroshi Iwai. "Observation of Substrate Silicon Incorporation into Thin Lanthanum Oxide Film during Rapid Thermal Annealing." Advanced Materials Research 1120-1121 (July 2015): 414–18. http://dx.doi.org/10.4028/www.scientific.net/amr.1120-1121.414.
Повний текст джерелаTORIUMI, Akira. "Interface Control of GeO2/Ge for High-performance Ge CMOS." Hyomen Kagaku 33, no. 11 (2012): 622–27. http://dx.doi.org/10.1380/jsssj.33.622.
Повний текст джерелаMartin, Lucy Claire, Hua Khee Chan, David T. Clark, Ewan P. Ramsay, A. E. Murphy, Dave A. Smith, Robin F. Thompson, et al. "Low Frequency Noise Analysis of Monolithically Fabricated 4H-SiC CMOS Field Effect Transistors." Materials Science Forum 778-780 (February 2014): 428–31. http://dx.doi.org/10.4028/www.scientific.net/msf.778-780.428.
Повний текст джерелаSuzuki, M., M. Maezawa, H. Takato, H. Nakagawa, F. Hirayama, S. Kiryu, M. Aoyagi, T. Sekigawa, and A. Shoji. "An interface circuit for a Josephson-CMOS hybrid digital system." IEEE Transactions on Appiled Superconductivity 9, no. 2 (June 1999): 3314–17. http://dx.doi.org/10.1109/77.783738.
Повний текст джерелаSano, B., B. Madhavan, and A. F. J. Levi. "8 Gbit/s CMOS interface for parallel fibre-optic interconnects." Electronics Letters 32, no. 24 (1996): 2262. http://dx.doi.org/10.1049/el:19961502.
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