Статті в журналах з теми "CMOS compatible fabrication"
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Buyong, Muhamad Ramdzan, Norazreen Abd Aziz, and Burhanuddin Yeop Majlis. "Characterization and Optimization of Seals-Off for Very Low Pressure Sensors (VLPS) Fabricated by CMOS MEMS Process." Advanced Materials Research 74 (June 2009): 231–34. http://dx.doi.org/10.4028/www.scientific.net/amr.74.231.
Повний текст джерелаBi, Cheng, and Yanfei Liu. "CMOS-Compatible Optoelectronic Imagers." Coatings 12, no. 11 (October 22, 2022): 1609. http://dx.doi.org/10.3390/coatings12111609.
Повний текст джерелаYu, Le, Yaozu Guo, Haoyu Zhu, Mingcheng Luo, Ping Han, and Xiaoli Ji. "Low-Cost Microbolometer Type Infrared Detectors." Micromachines 11, no. 9 (August 24, 2020): 800. http://dx.doi.org/10.3390/mi11090800.
Повний текст джерелаKempf, P., R. Hadaway, and J. Kolk. "Complementary metal oxide semiconductor compatible high-voltage transistors." Canadian Journal of Physics 65, no. 8 (August 1, 1987): 1003–8. http://dx.doi.org/10.1139/p87-161.
Повний текст джерелаRasmussen, A., M. Gaitan, L. E. Locascio, and M. E. Zaghloul. "Fabrication techniques to realize CMOS-compatible microfluidic microchannels." Journal of Microelectromechanical Systems 10, no. 2 (June 2001): 286–97. http://dx.doi.org/10.1109/84.925785.
Повний текст джерелаLv, Hongming, Huaqiang Wu, Jinbiao Liu, Can Huang, Junfeng Li, Jiahan Yu, Jiebin Niu, Qiuxia Xu, Zhiping Yu, and He Qian. "Inverted process for graphene integrated circuits fabrication." Nanoscale 6, no. 11 (2014): 5826–30. http://dx.doi.org/10.1039/c3nr06904d.
Повний текст джерелаWu, Wenhao, Yu Yu, Wei Liu, and Xinliang Zhang. "Fully integrated CMOS-compatible polarization analyzer." Nanophotonics 8, no. 3 (January 31, 2019): 467–74. http://dx.doi.org/10.1515/nanoph-2018-0205.
Повний текст джерелаAGARWAL, AJAY, N. BALASUBRAMANIAN, N. RANGANATHAN, and R. KUMAR. "SILICON NANOWIRES FORMATION IN CMOS COMPATIBLE MANNER." International Journal of Nanoscience 05, no. 04n05 (August 2006): 445–51. http://dx.doi.org/10.1142/s0219581x06004619.
Повний текст джерелаXiong, Chunle, Bryn Bell, and Benjamin J. Eggleton. "CMOS-compatible photonic devices for single-photon generation." Nanophotonics 5, no. 3 (September 1, 2016): 427–39. http://dx.doi.org/10.1515/nanoph-2016-0022.
Повний текст джерелаKang, G. B., J. M. Park, S. G. Kim, J. G. Koo, J. H. Park, Y. S. Sohn, and Y. T. Kim. "Fabrication and characterisation of CMOS compatible silicon nanowire biosensor." Electronics Letters 44, no. 16 (2008): 953. http://dx.doi.org/10.1049/el:20081876.
Повний текст джерелаCuiling Gong and Tim Hogan. "CMOS Compatible Fabrication Processes for the Digital Micromirror Device." IEEE Journal of the Electron Devices Society 2, no. 3 (May 2014): 27–32. http://dx.doi.org/10.1109/jeds.2014.2309129.
Повний текст джерелаPotts, A., G. J. Parker, J. J. Baumberg, and P. A. J. de Groot. "CMOS compatible fabrication methods for submicron Josephson junction qubits." IEE Proceedings - Science, Measurement and Technology 148, no. 5 (September 1, 2001): 225–28. http://dx.doi.org/10.1049/ip-smt:20010395.
Повний текст джерелаRay, Vishva, Ramkumar Subramanian, Pradeep Bhadrachalam, Liang-Chieh Ma, Choong-Un Kim, and Seong Jin Koh. "CMOS-compatible fabrication of room-temperature single-electron devices." Nature Nanotechnology 3, no. 10 (September 14, 2008): 603–8. http://dx.doi.org/10.1038/nnano.2008.267.
Повний текст джерелаBolten, Jens, Jens Hofrichter, Nikolaj Moll, Sophie Schönenberger, Folkert Horst, Bert J. Offrein, Thorsten Wahlbrink, Thomas Mollenhauer, and Heinrich Kurz. "CMOS compatible cost-efficient fabrication of SOI grating couplers." Microelectronic Engineering 86, no. 4-6 (April 2009): 1114–16. http://dx.doi.org/10.1016/j.mee.2008.11.038.
Повний текст джерелаZhou, Huajie, Yi Song, Qiuxia Xu, Yongliang Li, and Huaxiang Yin. "Fabrication of Bulk-Si FinFET using CMOS compatible process." Microelectronic Engineering 94 (June 2012): 26–28. http://dx.doi.org/10.1016/j.mee.2012.01.004.
Повний текст джерелаKoczorowski, W., P. Kuświk, M. Przychodnia, K. Wiesner, S. El-Ahmar, M. Szybowicz, M. Nowicki, W. Strupiński, and R. Czajka. "CMOS- compatible fabrication method of graphene-based micro devices." Materials Science in Semiconductor Processing 67 (August 2017): 92–97. http://dx.doi.org/10.1016/j.mssp.2017.05.021.
Повний текст джерелаXie, Sheng, Xuetao Luo, Luhong Mao, and Haiou Li. "Design, Fabrication, and Modeling of CMOS-Compatible Double Photodiode." Transactions of Tianjin University 23, no. 2 (March 2017): 163–67. http://dx.doi.org/10.1007/s12209-017-0038-1.
Повний текст джерелаZhang Chi, 张弛, та 肖淑敏 Xiao Shumin. "介质超构表面的CMOS兼容制备工艺的进展". Acta Optica Sinica 43, № 8 (2023): 0822003. http://dx.doi.org/10.3788/aos230489.
Повний текст джерелаMujeeb-U-Rahman, Muhammad, Dvin Adalian, and Axel Scherer. "Fabrication of Patterned Integrated Electrochemical Sensors." Journal of Nanotechnology 2015 (2015): 1–13. http://dx.doi.org/10.1155/2015/467190.
Повний текст джерелаVaha-Heikkila, T., and M. Ylonen. "$G$-Band Distributed Microelectromechanical Components Based on CMOS Compatible Fabrication." IEEE Transactions on Microwave Theory and Techniques 56, no. 3 (March 2008): 720–28. http://dx.doi.org/10.1109/tmtt.2008.916885.
Повний текст джерелаLi, Ying, Jun Yu, Hao Wu, and Zhenan Tang. "Design and fabrication of a CMOS-compatible MHP gas sensor." AIP Advances 4, no. 3 (March 2014): 031339. http://dx.doi.org/10.1063/1.4869616.
Повний текст джерелаKhondaker, Saiful I. "Parallel Fabrication of CMOS Compatible Single Walled Carbon Nanotube Devices." Reviews in Nanoscience and Nanotechnology 1, no. 3 (May 1, 2012): 187–99. http://dx.doi.org/10.1166/rnn.2012.1013.
Повний текст джерелаYin, Mei, Wei Yang, Yanping Li, Xingjun Wang, and Hongbin Li. "CMOS-compatible and fabrication-tolerant MMI-based polarization beam splitter." Optics Communications 335 (January 2015): 48–52. http://dx.doi.org/10.1016/j.optcom.2014.08.060.
Повний текст джерелаZhu, Huixian, Tai-Chin Lo, Ralf Lenigk, and Reinhard Renneberg. "Fabrication of a novel oxygen sensor with CMOS compatible processes." Sensors and Actuators B: Chemical 46, no. 2 (February 1998): 155–59. http://dx.doi.org/10.1016/s0925-4005(98)00044-6.
Повний текст джерелаPakula, L. S., H. Yang, H. T. M. Pham, P. J. French, and P. M. Sarro. "Fabrication of a CMOS compatible pressure sensor for harsh environments." Journal of Micromechanics and Microengineering 14, no. 11 (August 11, 2004): 1478–83. http://dx.doi.org/10.1088/0960-1317/14/11/007.
Повний текст джерелаNg, E. J., T. Myint, N. Shen, J. B. W. Soon, V. Pott, V. X. H. Leong, N. Singh, and J. M. Tsai. "High density vertical silicon NEM switches with CMOS-compatible fabrication." Electronics Letters 47, no. 13 (June 23, 2011): 759–60. http://dx.doi.org/10.1049/el.2011.1073.
Повний текст джерелаKoryazhkina, Maria N., Dmitry O. Filatov, Stanislav V. Tikhov, Alexey I. Belov, Dmitry A. Serov, Ruslan N. Kryukov, Sergey Yu Zubkov, et al. "Electrical Characteristics of CMOS-Compatible SiOx-Based Resistive-Switching Devices." Nanomaterials 13, no. 14 (July 16, 2023): 2082. http://dx.doi.org/10.3390/nano13142082.
Повний текст джерелаErfanian, Alireza, Hamed Mehrara, Mahdi Khaje, and Ahmad Afifi. "A room temperature 2 × 128 PtSi/Si-nanostructure photodetector array compatible with CMOS process." Sensor Review 35, no. 3 (June 15, 2015): 282–86. http://dx.doi.org/10.1108/sr-11-2014-0736.
Повний текст джерелаTang, Xiaoyu, Tao Hua, Yujie Liu, and Zhezhe Han. "Heterogeneous CMOS Integration of InGaAs-OI nMOSFETs and Ge pMOSFETs Based on Dual-Gate Oxide Technique." Micromachines 13, no. 11 (October 23, 2022): 1806. http://dx.doi.org/10.3390/mi13111806.
Повний текст джерелаPérez-Campos, A., G. F. Iriarte, J. Hernando-Garcia, and F. Calle. "Post-CMOS compatible high-throughput fabrication of AlN-based piezoelectric microcantilevers." Journal of Micromechanics and Microengineering 25, no. 2 (January 15, 2015): 025003. http://dx.doi.org/10.1088/0960-1317/25/2/025003.
Повний текст джерелаSmith, Melissa Alyson, Isaac Weaver, and Mordechai Rothschild. "Wafer-scale fabrication of CMOS-compatible, high aspect ratio encapsulated nanochannels." Journal of Vacuum Science & Technology B 36, no. 5 (September 2018): 051801. http://dx.doi.org/10.1116/1.5034463.
Повний текст джерелаMusick, Katherine M., Joel R. Wendt, Paul J. Resnick, Michael B. Sinclair, and D. Bruce Burckel. "Assessing the manufacturing tolerances and uniformity of CMOS compatible metamaterial fabrication." Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena 36, no. 1 (January 2018): 011208. http://dx.doi.org/10.1116/1.5009918.
Повний текст джерелаVitale, Wolfgang A., Clara F. Moldovan, Antonio Paone, Andreas Schüler, and Adrian M. Ionescu. "Fabrication of CMOS-compatible abrupt electronic switches based on vanadium dioxide." Microelectronic Engineering 145 (September 2015): 117–19. http://dx.doi.org/10.1016/j.mee.2015.03.055.
Повний текст джерелаXiao, Jing, Fuchuan Song, Kijeong Han, and Sang-Woo Seo. "Fabrication of CMOS-compatible optical filter arrays using gray-scale lithography." Journal of Micromechanics and Microengineering 22, no. 2 (January 13, 2012): 025006. http://dx.doi.org/10.1088/0960-1317/22/2/025006.
Повний текст джерелаYu, Huiyang, Xuke Yu, and Yifeng Li. "Design, fabrication and optimization of a CMOS compatible capacitive pressure sensor." Journal of Micromechanics and Microengineering 29, no. 2 (January 4, 2019): 025009. http://dx.doi.org/10.1088/1361-6439/aaf599.
Повний текст джерелаKaram, J. M., B. Courtois, and J. M. Paret. "Collective fabrication of microsystems compatible with CMOS through the CMP service." Materials Science and Engineering: B 35, no. 1-3 (December 1995): 219–23. http://dx.doi.org/10.1016/0921-5107(95)01337-7.
Повний текст джерелаSugimoto, Yasuhiro, Hiroyuki Hara, Tsutomu Koyanagi, and Hiroyuki Miyakawa. "Fabrication and Evaluation of the ECL/TTL Compatible BI-CMOS Gate Array." IEEJ Transactions on Electronics, Information and Systems 108, no. 12 (1988): 981–88. http://dx.doi.org/10.1541/ieejeiss1987.108.12_981.
Повний текст джерелаRoy, Avisek, Mehdi Azadmehr, Bao Q. Ta, Philipp Häfliger, and Knut E. Aasmundtveit. "Design and Fabrication of CMOS Microstructures to Locally Synthesize Carbon Nanotubes for Gas Sensing." Sensors 19, no. 19 (October 8, 2019): 4340. http://dx.doi.org/10.3390/s19194340.
Повний текст джерелаFaruque, M. O., R. Al Mahmud, and R. H. Sagor. "CMOS Compatible Plasmonic Refractive Index Sensor based on Heavily Doped Silicon Waveguide." Engineering, Technology & Applied Science Research 10, no. 1 (February 3, 2020): 5295–300. http://dx.doi.org/10.48084/etasr.3264.
Повний текст джерелаTabassum, Natasha, Mounika Kotha, Vidya Kaushik, Brian Ford, Sonal Dey, Edward Crawford, Vasileios Nikas, and Spyros Gallis. "On-Demand CMOS-Compatible Fabrication of Ultrathin Self-Aligned SiC Nanowire Arrays." Nanomaterials 8, no. 11 (November 5, 2018): 906. http://dx.doi.org/10.3390/nano8110906.
Повний текст джерелаHu, Juejun, Vladimir Tarasov, Nathan Carlie, Ning-Ning Feng, Laeticia Petit, Anu Agarwal, Kathleen Richardson, and Lionel Kimerling. "Si-CMOS-compatible lift-off fabrication of low-loss planar chalcogenide waveguides." Optics Express 15, no. 19 (2007): 11798. http://dx.doi.org/10.1364/oe.15.011798.
Повний текст джерелаSmith, A. D., Q. Li, A. Anderson, A. Vyas, V. Kuzmenko, M. Haque, L. G. H. Staaf, P. Lundgren, and P. Enoksson. "Toward CMOS compatible wafer-scale fabrication of carbon-based microsupercapacitors for IoT." Journal of Physics: Conference Series 1052 (July 2018): 012143. http://dx.doi.org/10.1088/1742-6596/1052/1/012143.
Повний текст джерелаKoppinen, P. J., M. D. Stewart, and Neil M. Zimmerman. "Fabrication and Electrical Characterization of Fully CMOS-Compatible Si Single-Electron Devices." IEEE Transactions on Electron Devices 60, no. 1 (January 2013): 78–83. http://dx.doi.org/10.1109/ted.2012.2227322.
Повний текст джерелаLi, Y., W. Parkes, L. I. Haworth, A. A. Stokes, K. R. Muir, P. Li, A. J. Collin, et al. "Anodic Ta2O5 for CMOS compatible low voltage electrowetting-on-dielectric device fabrication." Solid-State Electronics 52, no. 9 (September 2008): 1382–87. http://dx.doi.org/10.1016/j.sse.2008.04.030.
Повний текст джерелаLi, Nanxi, Chong Pei Ho, Shiyang Zhu, Yuan Hsing Fu, Yao Zhu, and Lennon Yao Ting Lee. "Aluminium nitride integrated photonics: a review." Nanophotonics 10, no. 9 (June 18, 2021): 2347–87. http://dx.doi.org/10.1515/nanoph-2021-0130.
Повний текст джерелаGonzález-Fernández, Alfredo A., Mariano Aceves-Mijares, Oscar Pérez-Díaz, Joaquin Hernández-Betanzos, and Carlos Domínguez. "Embedded Silicon Nanoparticles as Enabler of a Novel CMOS-Compatible Fully Integrated Silicon Photonics Platform." Crystals 11, no. 6 (May 31, 2021): 630. http://dx.doi.org/10.3390/cryst11060630.
Повний текст джерелаRanacher, Christian, Cristina Consani, Andreas Tortschanoff, Lukas Rauter, Dominik Holzmann, Clement Fleury, Gerald Stocker, et al. "A CMOS Compatible Pyroelectric Mid-Infrared Detector Based on Aluminium Nitride." Sensors 19, no. 11 (May 31, 2019): 2513. http://dx.doi.org/10.3390/s19112513.
Повний текст джерелаFilipovic, Lado, and Siegfried Selberherr. "Application of Two-Dimensional Materials towards CMOS-Integrated Gas Sensors." Nanomaterials 12, no. 20 (October 18, 2022): 3651. http://dx.doi.org/10.3390/nano12203651.
Повний текст джерелаMarcoux, J., J. Orchard-Webb, and J. F. Currie. "Complementary metal oxide semiconductor-compatible junction field-effect transistor characterization." Canadian Journal of Physics 65, no. 8 (August 1, 1987): 982–86. http://dx.doi.org/10.1139/p87-156.
Повний текст джерелаKuo, Yi-Shan, Shen-Yang Lee, Chia-Chin Lee, Shou-Wei Li, and Tien-Sheng Chao. "CMOS-Compatible Fabrication of Low-Power Ferroelectric Tunnel Junction for Neural Network Applications." IEEE Transactions on Electron Devices 68, no. 2 (February 2021): 879–84. http://dx.doi.org/10.1109/ted.2020.3045955.
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