Дисертації з теми "CIGSSe"
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Künecke, Ulrike [Verfasser], and Peter [Akademischer Betreuer] Wellmann. "Charakterisierung von Inhomogenitäten an CIGSSe-Solarzellenabsorbern im Rasterelektronenmikroskop / Ulrike Künecke. Gutachter: Peter Wellmann." Erlangen : Friedrich-Alexander-Universität Erlangen-Nürnberg (FAU), 2014. http://d-nb.info/1065269943/34.
Повний текст джерелаKeller, Jan [Verfasser], and Jürgen [Akademischer Betreuer] Parisi. "Charakterisierung und Simulation von sequentiell prozessierten CIGSSe-Solarzellen mit chemisch gradierter Absorberschicht : Möglichkeiten und Einschränkungen eines eindimensionalen Ansatzes / Jan Keller. Betreuer: Jürgen Parisi." Oldenburg : IBIT - Universitätsbibliothek, 2012. http://d-nb.info/1026283833/34.
Повний текст джерелаPohlner, Stephan [Verfasser], Carsten [Gutachter] Ronning, Gerhard [Gutachter] Franz, and Friedrich [Gutachter] Reinert. "Impact of indium sulphide based buffer layers on the electrical properties of CIGSSe thin film solar cells / Stephan Pohlner ; Gutachter: Carsten Ronning, Gerhard Franz, Friedrich Reinert." Jena : Friedrich-Schiller-Universität Jena, 2017. http://d-nb.info/1177599791/34.
Повний текст джерелаSaeed, Mahfouz Ali. "ELECTROCHEMICAL FABRICATION OF THIN FILM PHOTOVOLTAIC DEVICES (CIGS & CIGSS)." Case Western Reserve University School of Graduate Studies / OhioLINK, 2014. http://rave.ohiolink.edu/etdc/view?acc_num=case1396265882.
Повний текст джерелаKadam, Ankur. "PREPARATION OF EFFICIENT CUIN1-XGAXSE2-YSY/CDS THIN-FILM SOLAR CELLS BY OPTIMIZING THE MOLYBDENUM BACK CONTACT AND USING DIETHYL." Doctoral diss., University of Central Florida, 2006. http://digital.library.ucf.edu/cdm/ref/collection/ETD/id/4230.
Повний текст джерелаPh.D.
Department of Mechanical, Materials and Aerospace Engineering;
Engineering and Computer Science
Materials Science and Engineering
Kulkarni, Sachin. "EFFECT OF COMPOSITION, MORPHOLOGY AND SEMICONDUCTING PROPERTIES ON THE EFFICIENCY OF CUIN1-XGAXSE2-YSY THIN-FILM SOLAR CELLS PRE." Doctoral diss., University of Central Florida, 2008. http://digital.library.ucf.edu/cdm/ref/collection/ETD/id/2938.
Повний текст джерелаPh.D.
Department of Mechanical, Materials and Aerospace Engineering
Engineering and Computer Science
Materials Science & Engr PhD
Kaul, Ashwani. "Optimization of Process Parameters for Faster Deposition of CuIn1-xGaxS2 and CuIn1-xGaxSe2-ySy Thin Film Solar Cells." Doctoral diss., University of Central Florida, 2012. http://digital.library.ucf.edu/cdm/ref/collection/ETD/id/5336.
Повний текст джерелаPh.D.
Doctorate
Materials Science Engineering
Engineering and Computer Science
Materials Science and Engineering
Kumar, Bhaskar. "ZINC CADMIUM SULPHIDE AND ZINC SULPHIDE AS ALTERNATIVE HETEROJUNCTION PARTNERS FOR CIGS2 SOLAR CELLS." Master's thesis, University of Central Florida, 2007. http://digital.library.ucf.edu/cdm/ref/collection/ETD/id/4052.
Повний текст джерелаM.S.M.S.E.
Department of Mechanical, Materials and Aerospace Engineering;
Engineering and Computer Science
Materials Science & Engr MSMSE
Pethe, Shirish A. "Optimization of process parameters for reduced thickness CIGSeS thin film solar cells." Doctoral diss., University of Central Florida, 2010. http://digital.library.ucf.edu/cdm/ref/collection/ETD/id/4623.
Повний текст джерелаID: 030423396; System requirements: World Wide Web browser and PDF reader.; Mode of access: World Wide Web.; Thesis (Ph.D.)--University of Central Florida, 2010.; Includes bibliographical references (p. 108-116).
Ph.D.
Doctorate
Department of Electrical Engineering and Computer Science
Engineering and Computer Science
Jehl, Zacharie. "Realization of ultrathin Copper Indium Gallium Di-selenide (CIGSe) solar cells." Thesis, Paris 11, 2012. http://www.theses.fr/2012PA112058/document.
Повний текст джерелаIn this thesis, we investigate on the possibility to realize ultrathin absorber Copper Indium Gallium Di-Selenide (CIGSe) solar cells, by reducing the CIGSe thickness from 2500 nm down to 100 nm, while conserving a high conversion efficiency.Using numerical modeling, we first study the evolution of the photovoltaic parameters when reducing the absorber thickness. A strong decrease of the efficiency of the solar cell is observed, mainly related to a reduced light absorption and carrier collection for thin and ultrathin CIGSe solar cells. Solutions to overcome these problems are proposed and the potential improvements are modeled; we show that front side (buffer layer, antireflection coating) and back side (reflective back contact, light scattering) engineering of an ultrathin device can potentially increase the conversion efficiency up to the level of a standard thick CIGSe solar cell.By using chemical bromine etching on a standard thick CIGSe layer, we realize solar cells with different absorber thicknesses and experimentally study the influence of the absorber thickness on the photovoltaic parameters of the devices. Experiments show a similar trends to that observed in numerical modeling.Front contact engineering on thin CIGSe solar cell is realized to increase the specific absorption in CIGSe, including alternative ZnS buffer, front ZnO:Al window texturation and anti-reflection coating. Substantial improvements are observed whatever the CIGSe thickness, with efficiencies higher that the default configuration.A back contact engineering at low temperature is realized by using an innovative approach combining chemical etching of the CIGSe and mechanical lift-off of the CIGSe from the original Molybdenum (Mo) substrate. New highly reflective materials previously incompatible with the standard solar cell process are used as back contact for thin and ultrathin CIGSe solar cells, and a comparative study between standard Mo back contact and alternative reflective Au back contact solar cells is performed. The Au back reflector significantly enhance the efficiency of solar cell with sub-micrometer absorbers compared to the standard Mo back reflector; an efficiency higher than 10 % on a 400 nm CIGSe is obtained with Au back contact (7.9% with standard Mo back contact). For further reduction of the absorber thickness down to 100-200 nm, numerical modeling show that a lambertian back reflector is needed to fully absorb the incident light in the CIGSe. An experimental proof of concept device with a CIGSe thickness of 200 nm and a lambertian back reflector is realized and characterized by reflection/transmission spectroscopy, and the experimental spectral response is determined by combining simulation and experimentally measured absorption. A short circuit current of 26 mA.cm-2 is determined with the lambertian back reflector, which is much higher than what is obtained for the same device with no reflector (15 mA.cm-2), and comparable to the short circuit current measured on a reference 2500 nm thick CIGSe solar cell (28 mA.cm-2). Lambertian back reflectors are therefore found to be the most effective way to enhance the efficiency of an ultrathin CIGSe solar cell up to the level of a reference thick CIGSe solar cell
Heinemann, Marc Daniel [Verfasser], Bernd [Akademischer Betreuer] Rech, Michael [Gutachter] Powalla, Bernd [Gutachter] Rech, and Susan [Gutachter] Schorr. "CIGSe superstrate solar cells : growth and characterization of CIGSe thin films on transparent conductive oxides / Marc Daniel Heinemann ; Gutachter: Michael Powalla, Bernd Rech, Susan Schorr ; Betreuer: Bernd Rech." Berlin : Technische Universität Berlin, 2016. http://d-nb.info/115618021X/34.
Повний текст джерелаShirolikar, Jyoti. "PREPARATION AND CHARACTERIZATION OF CIGSS SOLAR CELLS AND PV MODULE DATA ANALYSIS." Master's thesis, University of Central Florida, 2005. http://digital.library.ucf.edu/cdm/ref/collection/ETD/id/4223.
Повний текст джерелаM.S.E.E.
Department of Electrical and Computer Engineering
Engineering and Computer Science
Electrical Engineering
Souilah, Marc. "Étude cristallochimique de semi-conducteurs CIGSe pour cellules photovoltaïques en couches minces." Nantes, 2009. http://www.theses.fr/2009NANT2061.
Повний текст джерелаThis study mainly focuses on the crystallographic research of powder compounds with photovoltaic properties. They are used in photovoltaic thin film solar cell (2nd generation) as absorber layer. They have been produced and sold in the US and Germany in particular. A complete powder compounds re-investigation have been made by X-Ray diffraction on powder and single crystal. The aim of this research was to have a better comprehension of the crystalline phases, especially for copper poor compounds. Electronic structure calculation have been conducted on specific CIGSe composition to try to understand some special properties. The original compound CuInSe2 was used as theoretical model because many experimental references can be found in the literature. Finally, CIGSe thin-film sample have been prepared for a study by transmission electronic microscopy. The purpose was to check the crystal quality with high gallium content, because the efficiency of the solar cells tends to drop down as the gallium content increasing
Marko, Hakim. "Développement de dispositifs photovoltaïques à base de CIGSe à grande bande interdite." Grenoble INPG, 2010. http://www.theses.fr/2010INPG0003.
Повний текст джерелаThe goal of this work is to improve the understanding of the experimental suboptimal electrical properties of solar cells based on large bandgap Cu(ln,Ga)Se2 (ClGSe), Le. EG > 1,2 eV and gallium content (xGa=[Ga]/([ln]+[Ga])) higher than 30 %. Ln order to try to answer to the problematic, the work have been focused, firstly, on the implementation of large bandgap ClGSe growth processes by thermal coevaporation and, secondly, on the development of CdS alternative buffer layer based on Zn(O,S) grown by atomic layer de position (AL D, in collaboration with the Uppsala University in Sweden) and reactive sputtering. At high Ga content (xGa rv 50 %), the ClGSe growth and its copper composition seems to be key factors for improving solar cells efficiencies. A model has been proposed in order to better understand the copper content effect at high gallium composition. The adjustment of the Zn(O,S) recipe grown by ALD allowed maximizing devices efficiencies close to 15 %. It is suggested that the control of the Zn(O,S) layer led to the favourable conduction band matching at the interface with the CIGSe. The Zn(O,S) de position by reactive sputtering showed a relative harmlessness for the CIGSe surface
Fedele, Carine. "Construction automatisée des compilateurs : le système CIGALE." Nice, 1991. http://www.theses.fr/1991NICE4469.
Повний текст джерелаCompiler-compilers are a well-known subject and many ideas have been explored. However, results are note entirely satisfactory. First, one should distinguish between compiler-compilers for experimental languages and those for implementation languages. In the first case, the efficiency of the generated compiler sis not important, and these systems are generally used bu people who do not wish to invest in compiler practice. In the second case, a resulting compiler which would be slow and generate inefficient code would be useless: all software products built using this implementation language would have unbearable performances, especially in the software world. On the contrary, users such a compiler-compiler are compiling practitioners and only ask for help in their task. Not much work is done in this last case and it is a pity. For an already long time, a theory of scanning an parsing has been developed. Today, automatically building a lexico-syntactic analyzer is easy. That is not the case for the other parts of the compiling process: contextual analysis and code generation. No « universal » theory is currently accepted by all scientists. The CIGALE system is a compiler writing system based on the well-known formalism of attribute grammars. From a description of the syntax and semantics of the language (the lexical aspect is implicit). CIGALE produces a compiler for this language generating EM code. This code is then processed by the ACK components until this language code is generated for a given actual machine. The language syntax is describing using a notation similar to BNF. The language semantics is described by the use of an abstract data type. This type is not frozen and the user can provide next tools for handling unforeseen language features. The thesis begins with the survey of nine formal semantic notations and of twenty compiler-compilers. The CIGALE system is then thoroughly xplained. The abstract data type for contextual analysis and dynamic semantics is then fully specified, and its use is demonstrated on a real size example. The thesis ends with the description of a higher-level notation deduced from this abstract data type
Schönherr, Sven [Verfasser], Carsten Gutachter] Ronning, Thomas [Gutachter] [Hannappel, and Johannes [Gutachter] Windeln. "Elektro-optische Untersuchung von CIGSe-Dünnschichtsolarzellen / Sven Schönherr ; Gutachter: Carsten Ronning, Thomas Hannappel, Johannes Windeln." Jena : Friedrich-Schiller-Universität Jena, 2016. http://d-nb.info/1177612615/34.
Повний текст джерелаMöckel, Stefan [Verfasser], and Peter [Akademischer Betreuer] Wellmann. "Bildungsmechanismen bei der Herstellung von CIGSe Solarzellenabsorbern aus nanopartikulären Präkursorschichten / Stefan Möckel. Gutachter: Peter Wellmann." Erlangen : Friedrich-Alexander-Universität Erlangen-Nürnberg (FAU), 2015. http://d-nb.info/1075562392/34.
Повний текст джерелаJehl, Zacharie. "Réalisation de cellules solaires à base d'absorbeurs ultraminces de diséléniure de cuivre, d'indium et de gallium (CIGSe)." Phd thesis, Université Paris Sud - Paris XI, 2012. http://tel.archives-ouvertes.fr/tel-00697615.
Повний текст джерелаLeonard, Edouard. "Cellules solaires à base de couches minces de Cu(In,Ga)Se2submicrométrique : optimisation des performances par ingénierie optique et électronique." Nantes, 2013. https://archive.bu.univ-nantes.fr/pollux/show/show?id=3014814e-52a6-4dd5-b332-31bcdede4e05.
Повний текст джерелаThe decrease of absorber thickness in co-evaporated Cu(In,Ga)Se2 based solar cell is important for both material consumption and production cycle time issues. This work proposes an analysis of Cu(In,Ga)Se2 solar cells deposited by multi-source physical vacuum evaporation using 3-stage process with absorber thickness reduced from 1. 5 μm to 0. 5 μm. The present contribution aims at drawing a diagnostic of the origins of the efficiency loss, discriminating optical loss and electrical issues. Electrical loss seems to be due to the formation of unfavourable electrical properties for the thinnest absorbers. The investigation of recombination mechanisms enabled us to propose adapted solutions to avoid electrical loss leading to efficiency of 12. 7 % for 0. 5 μm CIGSe solar cell. Since CIGSe thickness reduction is also responsible for efficiency loss due to a reduced absorption of photons, we introduced a back contact reflector based on a ZnO:Al layer deposited between the molybdenum layer and the CIGSe layer. We proposed an approach based on electrical point contact between the CIGSe layer and the molybdenum layer in order to allow optical gain without electrical losses due to the introduction of ZnO:Al layer. The better performances of solar cells underline the potential of this approach to improve significantly the efficiencies of submicron absorber CIGSe solar cells
Joel, Jonathan. "Characterization of Al2O3 as CIGS surface passivation layer in high-efficiency CIGS solar cells." Thesis, Uppsala universitet, Fasta tillståndets elektronik, 2014. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-230228.
Повний текст джерелаWang, Yajie [Verfasser], Bernd [Akademischer Betreuer] Szyszka, Rutger [Akademischer Betreuer] Schlatmann, Bernd [Gutachter] Szyszka, Rutger [Gutachter] Schlatmann, and Bart [Gutachter] Vermang. "Investigation of perovskite-CIGSe tandem solar cells / Yajie Wang ; Gutachter: Bernd Szyszka, Rutger Schlatmann, Bart Vermang ; Bernd Szyszka, Rutger Schlatmann." Berlin : Technische Universität Berlin, 2019. http://d-nb.info/1187830607/34.
Повний текст джерелаRostvall, Fredrik. "Potential Induced Degradation of CIGS Solar Cells." Thesis, Uppsala universitet, Fasta tillståndets elektronik, 2014. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-227745.
Повний текст джерелаCano, Garcia Jose. "Damp Heat Degradation of CIGS Solar Modules." Thesis, Högskolan Dalarna, Energiteknik, 2017. http://urn.kb.se/resolve?urn=urn:nbn:se:du-26006.
Повний текст джерелаEl, Hajje Gilbert. "Développement de nouvelles méthodes de caractérisation optoélectroniques des cellules solaires photovoltaïques par imagerie de luminescence." Thesis, Paris 6, 2016. http://www.theses.fr/2016PA066604/document.
Повний текст джерелаThe extensive knowledge on the luminescence of photovoltaic (PV) devices has made it a powerful characterization tool that captures the interest of both research and industrial PV communities. In this thesis, we focus on the luminescence of Cu(In,Ga)Se2-based solar PV. In particular, we explore and revisit the luminescence temporal, spectral and spatial dependencies. This resulted in the development of new luminescence-based characterization methods for this particular PV technology. We show initially that by means of an all-optical, contactless methodology, we are able to detect and localize the metastabilities of this technology. Using a numerical approach based on experimental time-resolved photoluminescence (TRPL) we managed to quantify the trapping defects that are behind these metastabilities. Once quantified, we translated it into absolute losses in the PV performance of the solar cell. By exploring the spatial dependence of the luminescence of Cu(In,Ga)Se2 solar cells, we successfully correlated its temporal and spectral aspects based on scanning confocal microscopy and hyperspectral imaging. This allowed us to generalize our previous findings at the global solar cell scale. This part of the thesis helped us better understand one of the fundamental origins behind the spatially inhomogeneous luminescence of Cu(In,Ga)Se2 PV devices. The final part of the thesis was mainly technical and exploratory. In particular, we introduced a new optical technique to the field of PV characterization. It is dedicated to time-resolved fluorescence lifetime imaging (TR-FLIM) which basically consists of acquiring time-resolved luminescence images of the PV device. With this new setup we are now able to spatially resolve, in real-time the charge carrier dynamics of a given PV technology and access its key electronic properties. A first application was made on a GaAs-based solar cell, for which we were able to optically extract the mobility, diffusion length and lifetime of its carriers. Finally, we were also able to estimate the diffusion coefficient of the material and its doping density
Bachmann, U. Erlich I. Schnurr N. "Possibilities of Multifunctional FACTS Application in the European Electric Power System under Changing Conditions of the Liberalized Electricity Market, CIGRE, 39th CIGRE Session, Paris, 25-30 August, Paper 14-112." Gerhard-Mercator-Universitaet Duisburg, 2003. http://www.ub.uni-duisburg.de/ETD-db/theses/available/duett-04142003-132349/.
Повний текст джерелаMoreau, Antonin. "Propriétés optiques et caractérisation par photoréflectance de cellules solaires à base de couches minces CIGS électrodéposées." Thesis, Aix-Marseille, 2013. http://www.theses.fr/2013AIXM4305.
Повний текст джерелаRegarding, thin film photovoltaic market, Cu(In1-x,Gax)Se2 (CIGSe) based material is one of the most advanced technologies. Its high absorption coefficient allows it to absorb an important part of the solar spectrum with only two micron thickness. But while moving from fundamental research to the development of batch flow production, issues still remain. If the standard co-evaporation process lead to the best efficiency up to 20 %, high energy consumption is needed. In an increasingly competitive market, electroplating allows to reduce operating cost related to vacuum processes while guaranteeing competitive efficiencies on large scale modules. Nevertheless, due to the specificities of electroplating, new issues occur and some properties may differ from vacuum routes. In particular, optical properties which are responsible for photo-current generation. The first part of this thesis is thus devoted to obtain the optical constants for each layer of the device by spectroscopic ellipsometry. We pay special attention to the electrodeposited CIGSe absorber layer for which a specific method have been used in order to perform measurements on the back side. The second part of this thesis is dedicated to the development of an caracterisation tool : the photoreflectance (PR). The experimental setup is precisely described. An special implementation, using dual modulation technique, increases accuracy by removing luminescence and scattering perturbations. The study of 14 CIGS samples allows finally to correlate opto-electrical parameters from I(V) curves with PR spectra
Sampathkumar, Manikandan. "Processing of Advanced Two-Stage CIGS Solar Cells." Scholar Commons, 2013. http://scholarcommons.usf.edu/etd/4938.
Повний текст джерелаBoman, Daniel. "Compositional gradients in sputtered thin CIGS photovoltaic films." Thesis, Uppsala universitet, Fasta tillståndets elektronik, 2018. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-355462.
Повний текст джерелаNygårds, Emma. "Optimering av CdS-buffertlager för alkalibehandlade CIGS-solceller." Thesis, Uppsala universitet, Fasta tillståndets elektronik, 2017. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-324427.
Повний текст джерелаMohanakrishnaswamy, Venkatesh. "Processing and characterization of CIGS - based solar cells." [Tampa, Fla.] : University of South Florida, 2004. http://purl.fcla.edu/fcla/etd/SFE0000368.
Повний текст джерелаDe, Abreu Mafalda Jorge Alexandre. "Advanced rear contact design for CIGS solar cells." Thesis, KTH, Skolan för elektroteknik och datavetenskap (EECS), 2019. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-257846.
Повний текст джерелаDen nuvarande trenden när det gäller solcellsanordningar huvudsakligen motiveras av ekonomiska aspekter, såsom kostnaden för att använda sällsynta jordartsmetaller, och av kraven i ny teknik. Införandet av ultratunna absorptionsskikt resulterar i en minskning av använda material och bidrar därmed till en mer kostnadseffektiv och tidseffektiv produktionsprocess.Användningen av absorptionsskikt med tjocklekar under 500 nm ger emellertid upphov till flera bekymmer, beträffande ljushantering och absorptorkvalitet.Därför presenterar detta experimentella arbete en ny solcellarkitektur som syftar till att ta itu med frågorna om optiska och elektriska förluster förknippade med ultratunna absorberlager. För detta ändamål infördes ett Hafnium Oxide (H f O2) bakre sidopassiveringsskikt mellan kopparindiumgallium (di) selenid Cu(In, Ga)Se2, CIGSbaserat absorberande skikt och Molybdenum (Mo) kontakt. Sedan upprättade den föreslagna kaliumfluorid (KF) alkali-behandlingen framgångsrikt punktkontakter på det ALD-avsatta oxidskiktet, vilket resulterade i en passiveringseffekt med minimal strömblockering.Den etablerade cellarkitektur visade signifikanta förbättringar avseende både öppna kretsspänningen (Voc) och effektivitet i jämförelse med opassiverad referensanordningar. Den använda solcellsimulatorn (SCAPS) tillskriver de observerade förbättringarna till en minskad minoritetsbärares rekombinationshastighet på enhetens baksida. Dessutom de tillhandahålls fotoluminescens (PL) resultat rapporterar en högre toppintensitet och livslängd för passive enheter.Dessutom visar överläggningen av det givna externa kvantitetseffektivitetsspektrumet (EQE) med de utförda simuleringarna att passiveringsskiktet HfO2 förbättrar den optiska reflektionen från den bakre kontakten över ett våglängdsintervall från 500 till 1100 nm, vilket resulterar i i en kortslutningsström (Jsc) förbättring. En ökad kvantverkningsgrad observerats i nästan hela mätområdet, bekräftar att öka i Jsc är också på grund av elektroniska effekter.Här, en producerad solcellsanordning innefattande en 3 nm-tjock HfO2 bakre passiveringsskikt och ett 500 nm-tjock 3-stegs CIGS absorber, uppnått en omvandlingseffektivitet på 9.8%.Vidare resulterade tillvägagångssättet att kombinera ett innovativt bakre ytpassiveringsskikt med en fluoridbaserad alkalibehandling i utvecklingen och framgångsrik karaktärisering av en 1-stegs, 8.6% effektivitet solcell. Ett sådant resultat, främst på grund av en kortslutningsström (Jsc) förbättring, stöder införandet av mer enkla produktionssteg, vilket möjliggör en mer kostnadseffektiv och tidseffektiv produktionsprocess. Den framställda anordningen bestod av ett 500 nm-tjock CIGS absorber, bakre passiverad med en ultra-tunn (2 nm) HfO2-skikt kombineras med en 0.6M KF behandling.
Stanley, Mishael. "Développement de Cellules Photovoltaiques à base de CIGS de haute performance sur substrats métalliques." Electronic Thesis or Diss., Paris Sciences et Lettres (ComUE), 2019. http://www.theses.fr/2019PSLEC023.
Повний текст джерелаThe objective of this thesis is the optimization of solar cells based on Cu (In, Ga) Se 2 (CIGS) on high performance metal substrate (> 20%). Metals generally have better mechanical strength than glass which is a brittle material. This allows for example to significantly reduce their thickness and get lighter photovoltaic devices. Moreover, if their thickness is sufficiently reduced, they become conformable or flexible. However, the metal substrates have their own drawbacks. They may contain impurities (eg Fe) that degrade the electronic properties of the absorber material. Furthermore, their thermal expansion coefficient is not always suitable for methods of making high temperature CIGS. Finally CIGS cells on glass substrate have a sodium intake, known element for improving the properties of the CIGS, and brought by the spread of this element from the glass through the molybdenum. The main objective of this thesis is to make solar cells based on CIGS by co-evaporation technique on metal substrates having the closest possible performance of the cells on substrates of soda lime glass (> 20%). The problems that this thesis must meet are the choice of the metal substrate, blocking the diffusion of impurities in the metallic substrates, ensuring strong adhesion to the substrate, reducing residual stresses (to ensure adherence ) and especially the optimization of the Mo adequate layer allowing necessary intake of alkali metal element (Na / K, ...) for a high performance and adaptation CIGS absorber to this type of substrate. Indeed the quality of CIGS will be highly dependent on the deposition temperature of the intake of alkaline element from the substrate and composition gradients In / Ga the back contact to the surface of CIGS. It is known that it is necessary to have a gradient gallium in the CIGS layer in order to obtain cells high. The deposition of CIGS layers by co-evaporation method will be by the "three-stage process." This involves depositing the layer of three well-defined stages. It is important to control this process in order to get a quality absorber for solar cells
Reithe, Annegret [Verfasser]. "Charakterisierung verschaltungsbedingter Degradationsmechanismen in flexiblen CIGS-Solarmodulen / Annegret Reithe." Aachen : Shaker, 2015. http://d-nb.info/1071527916/34.
Повний текст джерелаUllah, Shafi. "THIN FILM SOLAR CELLS BASED ON COPPER-INDIUMGALIUM SELENIDE (CIGS) MATERIALS DEPOSITED BY ELECTROCHEMICAL TECHNIQUES." Doctoral thesis, Universitat Politècnica de València, 2017. http://hdl.handle.net/10251/86290.
Повний текст джерелаLa obtención de dispositivos fotovoltaicos más eficientes y de bajo coste es uno de los desafíos tecnológicos más importantes de las últimas décadas. Existe la necesidad de desarrollar técnicas de fabricación escalables y de alto rendimiento que puedan reducir los costos y mejorar la fabricación de células solares de capa fina. Las células solares de heterounión de capas finas de seleniuro (o sulfuro) de cobre, indio y galio (CIGS) parecen estar bien adaptadas lograr este reto debido a su bajo costo, facilidad de fabricación y elevado rendimiento de los dispositivos. En la actualidad, Cu(In, Ga)Se2 ostenta el record de eficiencia de células solares con 22,3% a escala de laboratorio y esta eficiencia todavía puede ser acrecentada si se mejoran las diferentes capas de los dispositivos fotovoltaicos. Además, las capas absorbedoras de calcogenuros CIGS son un material candidato importante en dispositivos fotovoltaicos para capas delgadas celdas solares para aplicaciones espaciales debido a sus propiedades electrónicas, así como a su resistencia a la radiación. En el presente trabajo, las películas delgadas de Cu(In, Ga)(Se, S)2 se depositaron a temperatura ambiente sobre sustratos de vidrio recubiertos con ITO y Mo mediante técnicas electroquímicas. Las películas finas policristalinas obtenidas se caracterizaron por espectroscopia óptica UV-Vis, difracción de rayos X (XRD), microscopía electrónica de barrido (SEM), microscopía de fuerza atómica (AFM), microscopía electrónica de transmisión (TEM) y espectroscopia de energía dispersiva (EDS). Las películas finas de Cu(In, Ga)(Se, S)2 crecidas por electrodeposición se procesaron posteriormente en varios conjuntos de condiciones que incluían tratamiento térmico en vacío, tratamiento térmico en presencia de selenio o de azufre, tratamiento térmico en atmósfera gas nidrón (N2H2) a diferentes temperaturas y tiempos de procesado. Para mejorar la composición y la estructura cristalina de las capas finas y para optimizar las propiedades electro-ópticas se desarrolló un tratamiento térmico de las películas finas en dos etapas posterior a la electrodeposición. Se observó que la primera etapa de recocido (tratamiento térmico a 450 ºC en una atmósfera de selenio durante 40 minutos) producía una mejora apreciable en la estructura cristalina y en la composición de la capa fina. 20 En una segunda etapa se realizó una sulfuración de las películas de CuGaSe2 se realizó a 400 °C durante 10 min en presencia de azufre molecular y bajo la atmósfera reductora de gas nidrón. El efecto de la sulfuración fue la completa conversión del selenio en azufre y, por tanto, la transformación de CuGaSe2 en CuGaS2. La formación de películas delgadas de CuGaS2 se evidenció por el desplazamiento de los picos de difracción de las capas de CuGaSe2 hacia ángulos más altos hasta lo que hace que el patrón de difracción de rayos X lo que hace que coincida con el patrón de difracción del CuGaS2 y por el desplazamiento hacia el azul (energías más altas) del gap óptico. El gap óptico encontrado para las capas de CuGaSe2 era de 1,66 eV, mientras que el gap óptico para las capas de CuGaS2 se elevó hasta 2,2 eV. Las películas delgadas de CdS se han utilizado ampliamente como capa tampón en células solares CIGS. Sin embargo, cuando se alea con Zn, para formar el ternario ZnCdS, todavía puede mejorar su rendimiento como capa buffer. ZnCdS puede utilizarse como tampón y como ventana óptica en dispositivos fotoconductores y en células solares de capa fina de heterounión debido a la posibilidad de ajustar el bandgap con el contenido de Zn.
L'obtenció de dispositius fotovoltaics més eficients i més barats és un dels reptes tecnològics més importants de les últimes dècades. Hi ha la necessitat de desenvolupar tècniques de fabricació que siguen escalables i d'alt rendiment i que permeten reduir els costos de fabricació i millorar el rendiment de les cèl·lules solars de capa fina. Les cèl·lules solars de heterounió de capes fines de seleniur (o sulfur) de coure, indi i gal·li (CIGS) semblen estar ben adaptades per assolir aquest repte degut a del seu baix cost, facilitat de fabricació i elevat rendiment dels dispositius. En l'actualitat, el Cu(In, Ga)Se2 ostenta el rècord d'eficiència de cèl·lules solars amb 22,3% a escala de laboratori i aquesta eficiència encara pot ser augmentada si es milloren les característiques de les diferents capes dels dispositius fotovoltaics. Les capes absorbidores de calcogenurs CIGS són un candidat important per dispositius fotovoltaics per a pel·lícules primes en cel·les solars i aplicacions espacialles degut a les seues propietats electròniques així com a la seua resistència a la radiació. En el present treball, les pel·lícules primes de Cu(In, Ga)(Se, S)2 es van dipositar a temperatura ambient sobre substrats de vidre recoberts amb ITO i Mo mitjançant tècniques electroquímiques. Les pel·lícules fines policristal·lines obtingudes es van caracteritzar per espectroscòpia òptica UV-Vis, difracció de raigs X (XRD), microscòpia electrònica de rastreig (SEM), microscòpia de força atòmica (AFM), microscòpia electrònica de transmissió (TEM) i espectroscòpia d'energia dispersiva (EDS). Les pel·lícules fines de Cu(In, Ga)(Se, S)2 crescudes per electrodeposició es van processar posteriorment en diversos conjunts de condicions que incloïen tractament tèrmic en buit, tractament tèrmic en presència de seleni o de sofre, tractament tèrmic en atmosfera reductora de gas nidró (N2H2) a diferents temperatures i temps de processat. Per millorar la composició i l'estructura cristal·lina de les capes fines i per optimitzar les propietats electro-òptiques es va desenvolupar un tractament tèrmic de les pel·lícules fines en dues etapes posterior a la electrodeposició. Es va observar que la primera etapa de recuit (tractament tèrmic a 450 º C en una atmosfera de seleni durant 40 minuts) produïa una millora apreciable en l'estructura cristal·lina i en la composició de la capa fina. 24 En una segona etapa es va dur a terme una sulfuració de les pel·lícules de CuGaSe2 que es va realitzar a 400 °C durant 10 min en presència de sofre molecular i sota l'atmosfera reductora de gas nidró. L'efecte de la sulfuració va ser la completa conversió seleni en sofre i, per tant, la transformació de CuGaSe2 a CuGaS2. La formació de pel·lícules primes de CuGaS2 es va evidenciar pel desplaçament dels pics de difracció de les capes de CuGaSe2 cap angles més alts fins el que fa que el patró de difracció de raigs X el que fa que coincideixi amb el patró de difracció del CuGaS2 i pel desplaçament cap al blau (energies més altes) del gap òptic. El gap òptic trobat per a les capes de CuGaSe2 era de 1,66 eV, mentre que el gap òptic per a les capes de CuGaS2 es va elevar fins a 2,2 eV. Les pel·lícules primes de CdS s'han utilitzat àmpliament com a capa amortidora en cèl·lules solars de CIGS. No obstant això, quan s'alea amb Zn per formar ZnCdS encara pot millorar el seu rendiment com a capa d'amortiment. ZnCdS pot utilitzar-se com capa tampó i com a finestra òptica en dispositius fotoconductors i en cèl·lules solars de pel·lícula fina d'heterounió degut a la possibilitat d'ajustar el seu bandgap que depoen del contingut de Zn.
Ullah, S. (2017). THIN FILM SOLAR CELLS BASED ON COPPER-INDIUMGALIUM SELENIDE (CIGS) MATERIALS DEPOSITED BY ELECTROCHEMICAL TECHNIQUES [Tesis doctoral no publicada]. Universitat Politècnica de València. https://doi.org/10.4995/Thesis/10251/86290
TESIS
Painchaud, Thomas. "Mécanismes de croissance des couches minces de Cu (In, GA) Se2 co-évaporées : vers des synthèses rapides et à basse température." Nantes, 2010. http://www.theses.fr/2010NANT2088.
Повний текст джерелаCu(In1-xGax)Se2 solar cells are based on the Mo/Cu(In1-xGax)Se2/CdS/i-ZnO/ZnO:Al structure. Therapid growth of co-evaporated CIGSe thin films at low temperature is an important issue for theindustrial development of CIGSe modules. In order to achieve these 2 targets, CIGSe growthmechanisms during the 3-step process have been investigated. In the present work, a recrystallizationphenomenon has been underlined when the copper content within the CIGSe (0 ≤ x ≤ 0. 3) reaches the stoechiometry, i. E. Y = [Cu]/([In]+[Ga]) ≈ 1. Such a phenomenon is thermally activated and results in the reduction of both the grain boundaries (GB) density and intra-granular defects density. From these observations, a new model based on the grain boundary migration theory is proposed in order to establish a causality relationship between such a composition threshold and the grain boundary motion yielding large grains formation. The understanding of this mechanism allowed the decrease of the deposition time of co-evaporated layers from 23 min (h=16%, FF=76%) to 6 min (h=14%, FF=74%)at Tsub= 600 °C. Within the 3-step process, the homogenous composition of the absorber seemsrestricted by the high speed deposition during the 3rd step. Finally, in order to decrease the substratetemperature, the impact of Mo back contact has been investigated. The sodium diffusion from the glass substrate into CIGSe across the Mo plays an electronical role and is influenced by themolybdenum porosity and Tsub. The experimental optimization of the Mo back contact has allowed the achievement of 13. 5% efficiency with CIGSe absorber synthesized at Tsub = 450°C
Jahagirdar, Anant. "SOLAR DRIVEN PHOTOELECTROCHEMICAL WATER SPLITTING FOR HYDROGEN GENERATION USING MULTIPLE BANDGAP TANDEM OF CIGS2 PV CELLS AND TH." Doctoral diss., University of Central Florida, 2005. http://digital.library.ucf.edu/cdm/ref/collection/ETD/id/3505.
Повний текст джерелаPh.D.
Department of Mechanical, Materials and Aerospace Engineering;
Engineering and Computer Science
Materials Science and Engineering
Malm, Ulf. "Modelling and Degradation Characteristics of Thin-film CIGS Solar Cells." Doctoral thesis, Uppsala University, Solid State Electronics, 2008. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-9291.
Повний текст джерелаThin-film solar cells based around the absorber material CuIn1-xGaxSe2 (CIGS) are studied with respect to their stability characteristics, and different ways of modelling device operation are investigated. Two ways of modelling spatial inhomogeneities are detailed, one fully numerical and one hybrid model. In the numerical model, thin-film solar cells with randomized parameter variations are simulated showing how the voltage decreases with increasing material inhomogeneities.
With the hybrid model, an analytical model for the p-n junction action is used as a boundary condition to a numerical model of the steady state electrical conduction in the front contact layers. This also allows for input of inhomogeneous material parameters, but on a macroscopic scale. The simpler approach, compared to the numerical model, enables simulations of complete cells. Effects of material inhomogeneities, shunt defects and grid geometry are simulated.
The stability of CIGS solar cells with varying absorber thickness, varying buffer layer material and CIGS from two different deposition systems are subjected to damp heat treatment. During this accelerated ageing test the cells are monitored using characterization methods including J-V, QE, C-V and J(V)T. The degradation studies show that the typical VOC decrease experienced by CIGS cells subjected to damp heat is most likely an effect in the bulk of the absorber material.
When cells encapsulated with EVA are subjected to the same damp heat treatment, the effect on the voltage is considerably reduced. In this situation the EVA is saturated with moisture, representing a worst case scenario for a module in operation. Consequently, real-life modules will not suffer extensively from the VOC degradation effect, common in unprotected CIGS devices.
Reyes, Figueroa Pablo. "Deposition and characterization of CIGS layers by multiple deposition techniques." Thesis, Nantes, 2016. http://www.theses.fr/2016NANT4052/document.
Повний текст джерелаIn photovoltaics, the thin film Cu(In,Ga)Se2 (CIGSe) technology is one of the most promising technology to keep up with today’s energy production challenge. The first part of this work address the CISe absorbers films prepared by the 3-stage co-evaporation process. Also, the effect of the oxygen (along with sodium) in the CISe absorbers and solar cells is investigated. The highest 1st-stage substrate temperature (400 C) leads to the highest efficiency of 12% (Voc=460mV, Jsc=37 mA/cm2, FF=78.3%). Oxidation of the In2Se3 precursors films showed that long time exposures resulted in low solar cell parameters. The CISe cells without sodium are degraded after oxidation, with a drop in Voc (-72%) and FF (-45%). The second part of the work deals with the growth of CISe films by a hybrid process which involves two deposition techniques, namely spray pyrolysis and co-evaporation. The process is based on a 3-stage coevaporation process but replacing the 1st-stage film with an In2Se3 spray pyrolyzed film. It was shown that highquality CISe films can be obtained. Optimization of the hybrid process growth conditions (Cu regime) allowed solar cells with efficiencies of 11.1% (Voc=438mV, Jsc=37 mA/cm2, FF=67.5%). Further improvement could be achieved by the decrease of recombination at the back contact
Motahari, Sara. "Surface Passivation of CIGS Solar Cells by Atomic Layer Deposition." Thesis, KTH, Kraft- och värmeteknologi, 2013. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-127430.
Повний текст джерелаOng, Zi Xuan. "Transport imaging of multi-junction and CIGS solar cell materials." Monterey, California. Naval Postgraduate School, 2011. http://hdl.handle.net/10945/10665.
Повний текст джерелаSöderström, Wilhelm. "Alternative back contact for CIGS solar cells built on sodium-free substrates." Thesis, Uppsala universitet, Fasta tillståndets elektronik, 2011. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-154004.
Повний текст джерелаÅsberg, Anders. "Deposition of CIGS absorber layer by gas flow sputtering : Initiation of project." Thesis, Uppsala universitet, Fasta tillståndets elektronik, 2013. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-208140.
Повний текст джерелаWu, Tzung-Shin, and 吳宗欣. "Thermal effect on elemental diffusion of ZnO/CdS/CIGSSe solar cell at/near the heterojunction interface." Thesis, 2014. http://ndltd.ncl.edu.tw/handle/cp6w92.
Повний текст джерела國立交通大學
工學院加速器光源科技與應用碩士學位學程
102
This study is focused on understanding the elemental diffusion behaviors of Cu(In,Ga)(Se,S)2-based solar cells under the long-term thermal effect, To approach a real situation in application of solar cell, the sample was annealed to 110 oC and maintained this temperature for about 40 hr in the quartz tube. We chemically etched the ZnO/CdS/CIGSSe sample with a gradient thickness to observe the elemental distribution near/at the interfaces, the chemical environments and the electronic structure of the samples were also studied by means of soft and hard X-ray photoemission spectroscopies (XPS). Our results indicate that, the cadmium elements of the buffer layer diffuse into CIGSSe absorber layer, whereas the sulfur diffuses towards the absorber layer. On the other hand, the selenium elements of CIGSSe layer tend to diffuse towards both the buffer and the absorber layers, but Ga, In, and Cu diffuse towards the buffer layer. After thermal treatment, the In 4d photoelectron spectra reveal a lower binding energy component, which can be assigned to the interface phase CdxInySzSe1-z with the unbound valence electron of In. This compound is possibly formed at the interface of CdS and surface In-rich CIGSSe due to interdiffusion of elements. The creation of the unbound electron of In at the CdS/CIGSSe interface will trap the positive carriers, leading to lower probability of carrier collection by the back-side electrode. The redistributed concentration of all elements also leads to a smaller band gap. These results indicate some important factors of degradation in solar-cell conversion efficiency due to thermal effect.
Chen, Chih Zui, and 陳致睿. "Depth Profiling Electronic Properties of CIGSSe-based Thin Film Solar Cell with Zn(O,S) Buffer Layer." Thesis, 2016. http://ndltd.ncl.edu.tw/handle/44712385357225192516.
Повний текст джерелаHONG, CHEN-WEI, and 洪晨幃. "The effects of depth profiling and band Structure of CIGSSe solar cell elements to efficiency by using Scanning Photoelectron Microscopy." Thesis, 2015. http://ndltd.ncl.edu.tw/handle/31702554937341469224.
Повний текст джерела大同大學
光電工程研究所
103
In this study, we investigated the depth-dependent compositions and band structure of Cu(In,Ga)(Se,S)2-based solar cell device. In order to measure the elemental composition distribution and the band structure of the multi-layered films, we polished the CIGSSe-based solar cell with a gradient thickness to probe the position (depth)-dependent variations in photoelectron signals by using scanning photoelectron microscopy (SPEM). SPEM enables us to directly “observe” the depth-dependent compositions and band structure of the thickness-gradient CIGSSe-based solar cell due to its high spatial resolution (~200 nm) in photoelectron emission. Our experimental results show that the band structure is a spike type at the interface of CdS/CIGSSe. It is also found that the concentration ratios of Ga/In+Ga and S/S+Se are higher at the interface of CdS/CIGSSe, leading to a larger band gap and a higher conduction-band minimum near the top of absorber layer. In addition, we compared the material characteristics with the other sample of lower efficiency. The reason of lower efficiency can be attributed to the conduction band offset at its interface of CdS/CIGSSe, which is larger than the sample in this study.
Ho, Wei Hao, and 何偉豪. "Investigation of Cd-free buffer layers for CIGSe thin film solar cells." Thesis, 2017. http://ndltd.ncl.edu.tw/handle/2zyez7.
Повний текст джерела國立清華大學
材料科學工程學系
105
Cd-free buffer/CIGSe heterojunction solar cells have attracted much attention due to their non-toxicity and potential to enhance the photovoltaic performance. However, the heterointerface may contain a high density of defects, including the vacancies, antisites and defect complexes, leading the severe interface recombination, metastability behavior and the energy barrier blocking carrier transport, lowering the energy conversion efficiency. This dissertation aims to ameliorate the Cd-free buffer/CIGSe heterojunction properties and improves the device performance. We point out the main challenges in designing the heterojunction and propose three approaches to resolving these issues: In the first part, we demonstrate an effective room-temperature chemical solution treatment, by using thioacetamide (S treatment) or thioacetamide-InCl3 (In-S treatment) solution, on CIGSe surface to engineer the ZnS(O,OH)/CIGSe heterojunction. With treatments, the absolute average efficiency is significantly enhanced over 2 %, and the metastability, in terms of light soaking time, is minimized by 48%. The influences of chemical treatments on defect passivation at the interface are studied carefully. In the second part, we propose a novel approach to ameliorate the sputtered Inx(O,S)y/selenized CIGSe heterojunction, in terms of band alignment and interface properties. The band alignment was tailored by tuning the base pressure of the sputtering process to incorporate oxygen into deposited In2S3 layers. The interface properties were ameliorated by optimizing the air-annealing temperature on Inx(O,S)y /CIGSe stacked layers. Our approach enables the average efficiency improved from 2.30 % to 10.93 %. The mechanisms responsible for the improvements are investigated. In the third part, we successfully develop a full sputtered Inx(O,S)y/CIGSe solar cell technology, and investigate the impacts of Na and Se doping on the defect mechanism and device performance. As the Na-doped CIGSe absorbers buffered with Inx(O,S)y layer, the (VSe-VCu) deep acceptor defects were induced, acting as a transport barrier (p+ layer) at interface, decreasing the FF and JSC. By Se-doping, the (VSe-VCu) deep defects could be eliminated, improving the average efficiency to 11.13 %. We also proposed an approach to reducing the (VSe-VCu) defects in Na-doped CIGSe device. By increasing the Cu content and reducing the amount of Na doping, the average efficiency of the corresponding device could be improved from 4.64 % to 9.04 %.
Cheng, Hung-Lung, and 程宏隆. "Effects of Sulfur Profiles on Performance of Sulfurized CIGSS Solar Cells Studied by Device Simulation." Thesis, 2015. http://ndltd.ncl.edu.tw/handle/92367936579686798879.
Повний текст джерела國立東華大學
電機工程學系
103
A device model of thin-film Cu(In,Ga)(Se,S)2 (CIGSS) solar cells with a device structure of SLG/Mo/CIGSS/CdS/i-ZnO/AZO was developed, where the absorbers prepared by the sulfurization after selenization (SAS) method were incorporated in the model. The Cd-doping effect arising from chemical bath deposition process and the inverted conductivity type of surface region of CIGSS thin films due to Cu-poor composition to form the buried p-n homojunction were taken into account. In addition, the interface with interface states of recombination centers between CIGSS and CdS films was introduced into the model. The impacts of specified sulfur profiles for CIGSS absorbers with the different gallium distributions based on selenization of metal alloy on the performance of CIGSS solar cells were evaluated by numerical simulations. The effects of the front grading resulting from the surface sulfurization of CIGSS films were investigated and compared with those resulting from the change of Ga/(Ga+In) ratios. In order to reach the optimal device performance, the impacts of the sulfur distribution within the CIGSS absorbers prepared by SAS method were investigated. Furthermore, the range of O/(O+S) ratios of Zn(O,S) buffers for the improvement of CIGSS performance was studied by numerical simulation. The simulated results suggested that the modest front grading resulting from Ga or S could enhance the performance of devices. A proper sulphur profile could further improve the performance of CIGSS solar cells. The impacts of the incorporation of sulfur into the CIGSS films on the performance of devices were strongly correlated with the gallium distribution inside the CIGSS films. Moreover, the short-circuit current density of CIGSS could be enhanced by using wide-gap Zn(O,S) buffer layers.
Zhu, Xiaobo, and 朱曉波. "CIGS TFT and inhomogeneity effects on CIGS solar cells." Thesis, 2016. http://ndltd.ncl.edu.tw/handle/13757512392852824787.
Повний текст джерела國立臺灣大學
電子工程學研究所
104
Cu(Ga, In)Se2 (CIGS) thin film transistors and the inhomogeneity effects on CIGS solar modules are investigated. CIGS is one of the best candidate materials for thin film solar cell due to its strong light absorption as well as its relatively high mobility. It also has the advantage to reduce production cost for photovoltaics devices, and nowadays, the fabrication of CIGS solar cell is mature and commercial. But some problems like uniformity, morphology, and yield still affect the quality of CIGS solar cell and reduce its market in the competition with other kinds of solar cell like Si based solar cell, CdTe solar cell and CZTS solar cell. Besides the application in thin film solar cell, CIGS also has the potential to have a role in other fields, like light sensor, telecommunication, and thin film transistor (TFT). By solving the problems occurred in the fabrication of CIGS solar cell and achieving its application in other fields will promote the value of CIGS. In the first part of this dissertation, CIGS TFT is investigated. The fabricated CIGS TFT achieves a saturation mobility of ~1.8 cm2/V-s, and the on-off ratio over 3 orders of magnitude for the first time. We use a special ring pattern to simplify the fabrication process and avoided the problems occurred in the traditional TFTs. In the structure of CIGS TFT, Al2O3 is deposited by atomic layer deposition (ALD) on CIGS film as the dielectric layer. With the help of Al2O3 layer, the on current is high due to its high dielectric constant, and moreover, the channel can be passivated by Al2O3 layer, so that defects on the interface of CIGS/Al2O3 decrease, and eventually increase the saturation mobility. We also have applied thin-down process on the CIGS thin film, which was prepared for solar cell fabrication, to meet the required conditions for CIGS TFT. The characteristics of CIGS TFT are investigated consequently, and the improvement of saturation mobility after thin down process is found. This might be due to the different qualities of different layers in CIGS thin film, and is justified by the measurements of photoluminescence (PL) and X-ray diffraction (XRD). Moreover, the performances of CIGS TFTs with different content in CIGS films are investigated. TFT with high Cu/(Ga+In) ratio tends to have both high carrier concentration and saturation mobility. Sodium atoms might play important roles in these properties. In the second part of this dissertation, the inhomogeneity effects on CIGS solar modules are investigated. We firstly demonstrate the impact of residual strain on the CIGS solar module with Ga content fluctuation using first principle calculations. The simulation results show that the inhomogeneity effect is magnified by residual strain due to the enhanced band gap fluctuations. Then the 3D simulation results of CIGS solar cells are obtained with the residual strain effect incorporated. The parameters used in the model for the simulation are the same to those used in the commercial CIGS solar cell. A module consists of 3 cells in series, while each cell is divided into 3 sections. Intracell inhomo, intercell inhomo, and combined intracell+intercell inhomo are considered within a module, and the effects of both Ga content and thickness fluctuation are investigated. Among these three distributions, intracell+intercell inhomo is closest to the real distribution of inhomogeneity in the fabrication of CIGS solar module. In reality, Ga content fluctuation is serious and thickness fluctuation can be well controlled. The simulation results show that in terms of Ga content fluctuation, Intracell fluctuation causes VOC degradation, and intercell fluctuation causes JSC and fill factor degradations, and in terms of thickness fluctuation, VOC remains the same due to the constant Ga content, JSC is degraded due to the increase of excess carrier recombination, and the tendency of fill factor degradation is similar to Ga content fluctuation.
Santos, Jorge Miguel Gonçalves Ferreira dos. "Avaliação da qualidade do posicionamento da rede GNSS SERVIR - CIGeoE." Master's thesis, 2015. http://hdl.handle.net/10451/20740.
Повний текст джерелаEm 2006 o atual Centro de Informação Geoespacial do Exército (CIGeoE) começou a planear a instalação de uma rede de estações de referência GNSS (SERVIR). Inicialmente as estações estavam localizadas apenas na região de Lisboa, mas atualmente a cobertura integral de Portugal Continental está garantida. Desde a instalação da primeira estação de referência, nunca foi efetuado um controlo de qualidade a toda a rede. Para além deste aspeto, encontra-se em fase de testes, para posterior implementação, um novo programa de cálculo, denominado de Trimble® PIVOT™ (PIVOT), que substituirá o anterior, denominado de GPSNet™ (GPSNET). A realização desta dissertação, nesta fase, acaba por ser de grande importância devido à conjuntura atual já descrita. Para a avaliação geral da qualidade da rede SERVIR, foi seguida uma metodologia que se dividiu em 5 fases fundamentais. Na primeira escolheram-se 49 pontos, dispersos pelo território nacional, materializados por vértices geodésicos (VG) da rede geodésica nacional. De seguida foram selecionados 4 métodos de posicionamento, Estático, Rápido Estático e RTK (em duas variantes) para obtenção das coordenadas tridimensionais dos VG anteriores selecionados. A terceira fase consistiu na determinação das coordenadas a utilizar como referência, para avaliação da exatidão posicional. Na quarta fase foram determinadas as coordenadas de todos os VG, sendo que depois na quinta fase se procedeu à comparação. Os resultados apresentados referem-se a coordenadas cartesianas e geodésicas. Para ambos os tipos de coordenadas e utilizando qualquer dos programas, a rede SERVIR garante uma precisão melhor que 0.045 m, 0.024 m e 0.059 m para as coordenadas X, Y e Z respetivamente. O método RTK, nas suas duas variantes, garante uma exatidão melhor que 0.069 m, 0.062 m e 0.097 m para as coordenadas cartesianas X,Y e Z, ao passo que os resultados foram melhores que 0.055 m, 0.063 m e 0.106 m para a latitude, longitude e altitude, respetivamente. Por fim, a exatidão obtida com o método rápido estático foi melhor que 0.045 m, 0.030 m e 0.037 m, no que diz respeito às coordenadas cartesianas, e foi melhor que 0.024 m, 0.038 m e 0.080 m, no que diz respeito às coordenadas geodésicas.
In 2006 the current Centro de Informação Geoespacial do Exército (CIGeoE) started the installation of a network of GNSS reference stations (SERVIR). Initially the stations were located only in the Lisbon region, but a full coverage of Portugal mainland is assured nowadays. Since the installation of the first reference station, a quality control for the whole network was never carried out. Moreover, a new software package - Trimble Pivot ™ (PIVOT) - is being tested for further implementation, , in replacement of an older one - GPSNet ™ (GPSNET). For these reasons, an evaluation of the quality of SERVIR turns out to be of great importance. For evaluating the overall quality of the SERVIR network, a methodology divided into five key phases was adopted. The first phase consisted in the selection of 49 points, scattered throughout the country and materialized by geodetic monuments (VG) of the national geodetic network. In the second phase, we selected 4 positioning methods, Static, rapid static and RTK (in two variants) to obtain the three-dimensional coordinates of those VG. The third phase consisted in the determination of the coordinates to be used as benchmark, for evaluation of positional accuracy. In the fourth phase, the coordinates of all VG were determined. In the fifth stage, the coordinates computed in the fourth phase were compared against the benchmark values, using both Cartesian coordinates and geodetic coordinates. For both types of coordinates and using any of the software packages, the SERVIR network yields an accuracy better than 0.045 m, 0.024 m e 0.059 m, for the geodetic coordinates (latitude, longitude, altitude). The RTK method, both variants analyzed, yields an accuracy better than 0.069 m, 0.062 m e 0.097 m for the Cartesian coordinates (X, Y, Z), and better than 0.055 m, 0.063 m e 0.106 m, for latitude, longitude and altitude, respectively. Finally the accuracy obtained with the rapid static method was better than 0.045 m, 0.030 m e 0.037 m, for the Cartesian coordinates, and better than 0.024 m, 0.038 m e 0.080 m, for the geodetic coordinates.
Chang, Chien-wei, and 張謙維. "Preparation and Analyses of CIGSe Thin Films Solar Cells with the Ink-Printing p-Type Absorption Layer." Thesis, 2011. http://ndltd.ncl.edu.tw/handle/4cawdx.
Повний текст джерела國立臺灣科技大學
材料科學與工程系
99
The non-vacuum processes for Cu(In,Ga)Se2(CIGSe) solar cells have gradually attracted the researchers’ attentions. However, the major problem of the non-vacuum processes is the densification and the purity of the p-type absorption layer. In this study, CIGSe thin film solar cells were prepared by using ink-printing on alumina substrates. The p-type layers with the composition of Cu0.8In0.7Ga0.3Se2 were prepared from the inks containing the single-phase CIGSe powder, the mixed powder of Cu2Se, In2Se3, and Ga2Se3, and the mixture of single-phase powder and the mixed powder at the weight ratio of 50:50. The densification involves the one-step and two-step processes at different sintering temperatures. Some of the specimens were underwent the constrained sintering. The CIGSe solar cell was constituted with the stacking form of Ag/ITO/ZnO/CdS/ink-printing CIGSe/Mo/Al2O3. The quality of the absorption layer was analyzed by X-ray diffractometer and field emission of scanning electron microscope equipped with energy dispersive X-ray spectrometer. The performance of the solar cells was evaluated under the standard AM1.5 illumination. The experimental results showed that the best condition for the ink-printing CIGSe thin film with a thickness of 5 um was using the two-step process and the single-phase powder, sintering at 700–750 oC, and undergoing constrained sintering. The CIGSe films had the desired composition, good crystallinity, and the grain size of 600–700 nm. The stacked solar cells displayed the power conversion efficiencies of 1.1% and 1.5% for the cells with the CIGSe layers prepared from the 50/50 powder and the single-phase powder.