Статті в журналах: "Charge transfer device"

1

Deters, R. A., and R. L. Gutshall. "Charge transfer device star tracker applications." Journal of Guidance, Control, and Dynamics 10, no. 1 (January 1987): 97–103. http://dx.doi.org/10.2514/3.20186.

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2

Sweedler, Jonathan V., Robert B. Bilhorn, Patrick M. Epperson, Gary R. Sims, and M. Bonner Denton. "High-performance charge transfer device detectors." Analytical Chemistry 60, no. 4 (February 15, 1988): 282A—291A. http://dx.doi.org/10.1021/ac00155a002.

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3

Touron, Pierre, Francois Roy, Pierre Magnan, Olivier Marcelot, Stephane Demiguel, and Cedric Virmontois. "Capacitive Trench-Based Charge Transfer Device." IEEE Electron Device Letters 41, no. 9 (September 2020): 1388–91. http://dx.doi.org/10.1109/led.2020.3014431.

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4

Onlaor, Korakot, S. Khantham, B. Tunhoo, T. Thiwawong, and J. Nukeaw. "Charge Transfer Mechanism in Organic Memory Device." Advanced Materials Research 93-94 (January 2010): 235–38. http://dx.doi.org/10.4028/www.scientific.net/amr.93-94.235.

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In this paper, the conduction mechanism in organic bistable memory device was investigated by both experimental and theoretical method. The current voltage (J-V) characteristics showed the electrical bistable properties between an initial low-conductivity state and a high-conductivity state upon application of an external electric field at room temperature. The current transition exhibited a very narrow voltage range that causes an abrupt increase of current. The on-state and the off-state were proposed by space-charge-limited current and thermionic emission model, respectively. That supported by the experimental data to explained the charge transfer mechanism in organic memory device.

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5

LeNoble, M., J. V. Cresswell, and R. R. Johnson. "Two-phase GaAs cermet-gate charge-coupled devices." Canadian Journal of Physics 69, no. 3-4 (March 1, 1991): 224–28. http://dx.doi.org/10.1139/p91-037.

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A nonplanar 64-pixel, 2-phase GaAs cermet-gate charge-coupled device (CMCCD) and a planar 128-pixel, 2-phase GaAs CMCCD are described. The former device employs a castellation to provide the "built-in" electric field for controlling the flow of signal charge within the channel, whereas, the latter device uses externally applied electric fields to achieve this control. Both devices have been operated at 46 MHz, demonstrating charge transfer efficiencies of 0.996 and in excess of 0.999, respectively. The application of the planar 2-phase GaAs CMCCD in a 500 or 7.81 MHz transient digitizer module for acquisition and transfer of dc to 250 MHz band-limited signals will also be presented.

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6

van Niekerk, Daniel, and Pitshou Bokoro. "A Durability Model for Analysis of Switching Direct Current Surge Degradation of Metal Oxide Varistors." Electronics 11, no. 9 (April 22, 2022): 1329. http://dx.doi.org/10.3390/electronics11091329.

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In this study, a durability model for predicting the lifetime of MOV devices used to prevent DC switch damage due to occasional switching surges is proposed and validated. In addition, MOV devices are subjected to induced switching DC surges of a constant amplitude and variable time durations. Each MOV of the 270 selected devices sourced from three different manufacturers with similar size and electrical specifications was subjected to 5000 degrading surges. Three samples of 30 of the selected MOV devices from each manufacturer were degraded by induced switching DC surge durations of 2, 3, and 4 ms in order to reach an undesirable degradation level of 10% change in V1 mA. A statistical analysis of the three MOV manufacturer sample averages of the accumulated conduction charge transfer at 10% change in V1 mA supported the proposed durability model irrespective of the surge charge content variation and MOV material differences. The results show that MOV device durability or resilience may be more accurately modelled by using the surge average accumulated conduction charge transfer of a statistically significant MOV device sample.

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7

Peng, Zhang Zhu, and Bo Yin. "Research on Human Implantable Wireless Energy Transfer System." Applied Mechanics and Materials 624 (August 2014): 405–9. http://dx.doi.org/10.4028/www.scientific.net/amm.624.405.

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Advances in medical technology and promote the human implantable wireless energy transfer devices are widely used. Traditional human implantable wireless energy transfer device have some problems of low charging efficiency, blindly charging and data transmission difficult. On the basis of the conventional electromagnetic induction, in this paper, we proposed the use of magnetically coupled resonant way on human implantable device for charging, this method can greatly improve the efficiency of wireless charging. The system gets the CPU’s unique ID of human implantable devices to identifying the device. We can artificially control human implantable device’s charging device number, so as to solve the problems caused by the blind charge. Meanwhile, the system uses an electromagnetic carrier approach for data transmission, both to simplify the complexity of hardware devices and improve the communication efficiency of the device.

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8

Watson, C. P., and D. M. Taylor. "Demonstration of interfacial charge transfer in an organic charge injection device." Applied Physics Letters 99, no. 22 (November 28, 2011): 223304. http://dx.doi.org/10.1063/1.3665190.

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9

Davidson, D. A., and O. Berolo. "GaAs charge-coupled devices." Canadian Journal of Physics 67, no. 4 (April 1, 1989): 225–31. http://dx.doi.org/10.1139/p89-040.

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This paper reports on the first Canadian involvement in the design, process development, fabrication, and evaluation of a gallium arsenide (GaAs) charge-coupled device (CCD). The project is applications driven, and is eventually expected to yield devices capable of performing at microwave frequencies with broad bandwidths. The devices were originally designed to operate in a transient digitizer for high-energy nuclear-event analysis at the the Tri- University Meson Facility (TRIUMF) in B.C.The prototype device consists of a 32-stage, four-phase GaAs CCD intended to function at radio-frequencies (if). The work that has been undertaken will be discussed under the following aspects: device design, layout description, and substrate-material specifications. This discussion will be supported by an in-depth explanation of the functioning and operation of the GaAs CCD, and how the above considerations affect it. A description will be given of the procedures, methodology, and the test-bed utilized to evaluate the devices. Results will be given for CCDs operating close to 1 GHz. The rf waveform will be analyzed in the context of charge-transfer efficiency (CTE) and the presence of clock feedthrough. Because of the need for an eventual integration of the GaAs CCD on-chip with other essential auxiliary electronic circuitry, results will be given for devices working in conjunction with other GaAs digital and analog circuits, such as a broad-band four-phase clock generator and a sample-and-hold circuit.

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10

Tian, Hai Chuan, Feng Xu, Guo Li Yang, and Teng Fei Wu. "The Heat Charge and Discharge Characteristics Simulation of Phase Change Thermal Storage Device." Advanced Materials Research 179-180 (January 2011): 239–42. http://dx.doi.org/10.4028/www.scientific.net/amr.179-180.239.

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The two-dimensional unsteady heat transfer model is been established. Analyzing on heat storage-release property of phase change thermal storage device within the fluid parallel spiral pipes in various conditions, suggestions are put forward to strengthen thermal storage for the device.

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11

Mishra, Leepsa, Aradhana Panigrahi, Priyanka Dubey, and Manas Kumar Sarangi. "Photo-induced charge transfer in composition-tuned halide perovskite nanocrystals with quinone and its impact on conduction current." Journal of Applied Physics 132, no. 19 (November 21, 2022): 195702. http://dx.doi.org/10.1063/5.0123558.

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A facile interfacial charge transfer (CT) with a reduced inter-layer energy band regulates the charge transport mechanism in any optoelectronic device. The enhancement in semiconductor-based device performance often demands improved CT dynamics and collection of free carriers with reduced charge recombination. In this work, we present a detailed inspection of the photo-induced CT between inorganic lead halide perovskite nanocrystals (PNCs) with varied compositions and their consequence on the charge transport process. The superior CT rate in mixed halide CsPbBr2Cl PNCs with naphthoquinone (NPQ) is revealed when compared with the parent CsPbBr3 PNCs and its anion-exchanged counterpart CsPbCl3. The glimpses of hole transfer contribution along with electron transfer are detected for CsPbBr2Cl with superior CT efficiency. The enhanced conduction current after the insertion of NPQ into the PNCs with a reduced hysteresis suggests an improved charge transport in the fabricated device compared to the pristine PNCs. These findings can contribute to a better understanding of multiple ways of engineering optoelectronic devices to boost performance and efficiencies and the concurrent role of the CT process in the conduction mechanism.

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12

In-Young Chung, Young June Park, and Hong Shick Min. "A charge pumping device with a potential barrier using inversion charge transfer." IEEE Transactions on Electron Devices 48, no. 6 (June 2001): 1216–21. http://dx.doi.org/10.1109/16.925250.

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13

Wang, Yu-Sa, Yan-Ji Yang, Yong Chen, Xiao-Yan Liu, Wei-Wei Cui, Yu-Peng Xu, Cheng-Kui Li, et al. "Measurements of charge transfer efficiency in a proton-irradiated swept charge device." Chinese Physics C 38, no. 6 (June 2014): 066001. http://dx.doi.org/10.1088/1674-1137/38/6/066001.

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14

Dobson, David A. B., and Savvas G. Chamberlain. "Transient analysis of signal charge transfer in long diffused regions of spectroscopic image sensors." Canadian Journal of Physics 70, no. 10-11 (October 1, 1992): 1086–91. http://dx.doi.org/10.1139/p92-175.

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This paper presents the results of a study of charge transfer time in long doped semiconductor regions. These regions are used to collect and store charge in high performance image sensors. The effect of dopant concentration on charge transfer time was studied using a novel two-dimensional device simulation tool. It was found that the delay associated with the long storage region only becomes significant for doping concentrations that are not degenerate. The effect of storage diffusion length on charge transfer time was also studied for degenerately doped structures. For these structures, it was found that the delay is much less than the conventional belief that the delay is proportional to the square of the diffusion dimension the electrons traverse. It was also found that the diffusion dimension affects the charge transfer time indirectly through the back biasing of the transfer metal oxide semiconductor field effect transistor (MOSFET). Shorter diffusions initially cause a larger back biasing of the transfer MOSFET, decreasing the maximum current flow through the device. On the experimental side, novel image sensor devices were designed that incorporate some of the results discussed above. Experimental image sensor structures were analyzed to study charge transfer time and relate the results to the computer simulations.

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15

Zhao, Enming, Xiaodan Liu, Guangyu Liu, and Bao Zhou. "Triggering WORM/SRAM Memory Conversion by Composite Oxadiazole in Polymer Resistive Switching Device." Journal of Nanomaterials 2019 (August 21, 2019): 1–8. http://dx.doi.org/10.1155/2019/9214186.

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Electrical characterization indicates that the nonvolatile write once read many (WORM) times/volatile static random access memory (SRAM) conversion was triggered by the composite of the oxadiazole small molecule. FTO/PMMA/Ag device possesses nonvolatile WORM memory behavior, while the FTO/PMMA+oxadiazole/Ag device shows vastly different volatile SRAM feature. The FTO/PMMA/Ag and FTO/PMMA+oxadiazole/Ag memory devices both exhibit high ON/OFF ratio nearly 104. The additive oxadiazole small molecule in the polymethyl methacrylate was suggested to form an internal electrode and serve as a channel during the charge transfer process, which is easy to both the charge transfer and back charge transfer, as a consequence, the WORM/SRAM conversion upon oxadiazole small molecule complexation was triggered. The results observed in this work manifest the significance of oxadiazole small molecule to the memory effects and will arouse the research interest about small molecule composite applied in memory devices.

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16

Ruyten, Wim. "Smear correction for frame transfer charge-coupled-device cameras." Optics Letters 24, no. 13 (July 1, 1999): 878. http://dx.doi.org/10.1364/ol.24.000878.

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17

Marek, Juraj, Jozef Kozarik, Michal Minarik, Aleš Chvála, Matej Matus, Martin Donoval, Lubica Stuchlikova, and Martin Weis. "Charge Trap States of SiC Power TrenchMOS Transistor under Repetitive Unclamped Inductive Switching Stress." Materials 15, no. 22 (November 19, 2022): 8230. http://dx.doi.org/10.3390/ma15228230.

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Silicon carbide (SiC) has been envisioned as an almost ideal material for power electronic devices; however, device reliability is still a great challenge. Here we investigate the reliability of commercial 1.2-kV 4H-SiC MOSFETs under repetitive unclamped inductive switching (UIS). The stress invoked degradation of the device characteristics, including the output and transfer characteristics, drain leakage current, and capacitance characteristics. Besides the shift of steady-state electrical characteristics, a significant change in switching times points out the charge trapping phenomenon. Transient capacitance spectroscopy was applied to investigate charge traps in the virgin device as well as after UIS stress. The intrinsic traps due to metal impurities or Z1,2 transitions were recognized in the virgin device. The UIS stress caused suppression of the second stage of the Z1,2 transition, and only the first stage, Z10, was observed. Hence, the UIS stress is causing the reduction of multiple charging of carbon vacancies in SiC-based devices.

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18

Sin, Dong Hun, Soo Hyun Kim, Jaewon Lee, and Hansol Lee. "Modification of Electrode Interface with Fullerene-Based Self-Assembled Monolayer for High-Performance Organic Optoelectronic Devices." Micromachines 13, no. 10 (September 27, 2022): 1613. http://dx.doi.org/10.3390/mi13101613.

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Efficient charge transfer between organic semiconductors and electrode materials at electrode interfaces is essential for achieving high-performance organic optoelectronic devices. For efficient charge injection and extraction at the electrode interface, an interlayer is usually introduced between the organic active layer and electrode. Here, a simple and effective approach for further improving charge transfer at the organic active layer–interlayer interface was presented. Treatment of the zinc oxide (ZnO) interlayer, a commonly used n-type interlayer, with a fullerene-based self-assembled monolayer (SAM) effectively improved electron transfer at the organic–ZnO interface, without affecting the morphology and crystalline structure of the organic active layer on the cathode interlayer. Furthermore, this treatment reduced charge recombination in the device, attributed to the improved charge extraction and reduction of undesirable ZnO-donor polymer contacts. The photocurrent density and power conversion efficiency of organic solar cells employing the fullerene-SAM-treated interlayer were ~10% higher than those of the device employing the nontreated interlayer. This improvement arises from the enhanced electron extraction and reduced charge recombination.

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19

Hersam, M. C., and R. G. Reifenberger. "Charge Transport through Molecular Junctions." MRS Bulletin 29, no. 6 (June 2004): 385–90. http://dx.doi.org/10.1557/mrs2004.120.

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AbstractIn conventional solid-state electronic devices, junctions and interfaces play a significant if not dominant role in controlling charge transport. Although the emerging field of molecular electronics often focuses on the properties of the molecule in the design and understanding of device behavior, the effects of interfaces and junctions are often of comparable importance. This article explores recent work in the study of metal–molecule–metal and semiconductor–molecule–metal junctions. Specific issues include the mixing of discrete molecular levels with the metal continuum, charge transfer between molecules and semiconductors, electron-stimulated desorption, and resonant tunneling. By acknowledging the consequences of junction/interface effects, realistic prospects and limitations can be identified for molecular electronic devices.

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20

Parisi, J., V. Dyakonov, M. Pientka, I. Riedel, C. Deibel, C. J. Brabec, N. S. Sariciftci, and J. C. Hummelen. "Charge Transfer and Transport in Polymer-Fullerene Solar Cells." Zeitschrift für Naturforschung A 57, no. 12 (December 1, 2002): 995–1000. http://dx.doi.org/10.1515/zna-2002-1214.

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The development of polymer-fullerene plastic solar cells has made significant progress in recent years. These devices excel by an efficient charge generation process as a consequence of a photoinduced charge transfer between the photo-excited conjugated polymer donor and acceptor-type fullerene molecules. Due to the paramagnetic nature of the radical species, the photo-induced charge transfer can be analyzed by the help of light-induced electron spin resonance spectroscopy. Upon looking at an interpenetrating donor-acceptor composite consisting of the polymer MDMOPPV and the fullerene derivative PCBM, we disclose two well separated line groups having a strongly anisotropic structure. The line shape can be attributed to an environmental axial symmetry of the polymer cation and a lower rhombohedric symmetry of the fullerene anion. Since the signals were found to be independent of one another with different spin-lattice relaxation times, the radical species can be discriminated via separate characterization procedures. In order to study the bulk charge transport properties, we carried out admittance spectroscopy on the polymer-fullerene solar cell device including a transparent semiconductor oxide front contact (ITO/PEDOT:PSS) and a metal back contact (Al). The temperature- and frequency-dependent device capacitance clearly uncovers two different defect states, the first, having an activation energy of 9 meV, indicates a shallow trap due to a bulk impurity, the latter, having an activation energy of 177 meV, can be assigned to an interfacial defect state located between the polymer-fullerene composite and the metal back contac

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21

Smith, P. H., J. P. D. Gow, P. Pool, and A. D. Holland. "Charge transfer inefficiency in the pre- and post-irradiated Swept Charge Device CCD236." Journal of Instrumentation 10, no. 03 (March 24, 2015): C03041. http://dx.doi.org/10.1088/1748-0221/10/03/c03041.

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22

Prytherch, Huw. "Characterization and simple modeling of charge transfer problems using a charge-coupled device." Optical Engineering 36, no. 4 (April 1, 1997): 1259. http://dx.doi.org/10.1117/1.601282.

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23

Xie, An, Yuxian Jian, Zichao Cheng, Yu Gu, Zhanyang Chen, Xiufeng Song, and Zaixing Yang. "High responsivity of hybrid MoTe₂/perovskite heterojunction photodetectors." Journal of Physics: Condensed Matter 34, no. 15 (February 10, 2022): 154007. http://dx.doi.org/10.1088/1361-648x/ac4f1b.

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Abstract Two-dimensional (2D) van der Waals heterojunction offers alternative facile platforms for many optoelectronic devices due to no-dangling bonds and steep interface carrier gradient. Here, we demonstrate a 2D heterojunction device, which combines the benefits of high carrier mobility of 2D MoTe2 and strong light absorption of perovskite, to achieve excellent responsivity. This device architecture is constructed based on the charge carriers separation and transfer with the high-gain photogating effect at the interface of the heterojunction. The device exhibits high responsivity of 334.6 A W−1, impressive detectivity of 6.2 × 1010 Jones. All the results provide the insight into the benefits of interfacial carriers transfer for designing hybrid perovskite-2D materials based optoelectronic devices.

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24

Kim, Junho, Hyeok Kim, Dongwook Kim, Hun-Jun Park, Kiwon Ban, Seungyoung Ahn, and Sung-Min Park. "A Wireless Power Transfer Based Implantable ECG Monitoring Device." Energies 13, no. 4 (February 18, 2020): 905. http://dx.doi.org/10.3390/en13040905.

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Implantable medical devices (IMDs) enable patients to monitor their health anytime and receive treatment anywhere. However, due to the limited capacity of a battery, their functionalities are restricted, and the devices may not achieve their intended potential fully. The most promising way to solve this limited capacity problem is wireless power transfer (WPT) technology. In this study, a WPT based implantable electrocardiogram (ECG) monitoring device that continuously records ECG data has been proposed, and its effectiveness is verified through an animal experiment using a rat model. Our proposed device is designed to be of size 24 × 27 × 8 mm, and it is small enough to be implanted in the rat. The device transmits data continuously using a low power Bluetooth Low Energy (BLE) communication technology. To charge the battery wirelessly, transmitting (Tx) and receiving (Rx) antennas were designed and fabricated. The animal experiment results clearly showed that our WPT system enables the device to monitor the ECG of a heart in various conditions continuously, while transmitting all ECG data in real-time.

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25

Rebbani, Ahmed, Omar Bouattane, Lhoucine Bahatti, and Mimoun Zazoui. "An Efficient Electric Charge Transfer Device for Intelligent Storage Units." Open Journal of Energy Efficiency 03, no. 03 (2014): 50–63. http://dx.doi.org/10.4236/ojee.2014.33006.

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26

Arutyunov, V. A., and O. V. Sorokin. "Correcting the photoresponse of a linear photosensitive charge-transfer device." Journal of Optical Technology 69, no. 1 (January 1, 2002): 36. http://dx.doi.org/10.1364/jot.69.000036.

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27

Rushton, J., A. Holland, K. Stefanov, and F. Mayer. "Characterisation of a CMOS charge transfer device for TDI imaging." Journal of Instrumentation 10, no. 03 (March 18, 2015): C03027. http://dx.doi.org/10.1088/1748-0221/10/03/c03027.

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28

Sweedler, Jonathan V. "Charge Transfer Device Detectors and Their Applications to Chemical Analysis." Critical Reviews in Analytical Chemistry 24, no. 1 (January 1993): 59–98. http://dx.doi.org/10.1080/10408349308048819.

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29

Ortiz-Soto, Karla A., Oscar A. Jaramillo-Quintero, Edgar Alvarez-Zauco, and Marina E. Rincon. "Charge Transfer in Self-Assembled Fullerene-Tetraphenylporphyrin Non-Covalent Multilayer." ECS Journal of Solid State Science and Technology 11, no. 1 (January 1, 2022): 014001. http://dx.doi.org/10.1149/2162-8777/ac4797.

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Self-assembly of organic molecules is a promising method for generating multilayer systems for fabrication of functional devices. In particular, fullerene (C60) and porphyrin molecules offer a variety of binding modes, including π–π interactions, dipole electrostatic attraction, and hydrogen bonding, to tailor the charge separation and charge recombination limiting device performance. Here, we investigate multilayer systems obtained by the sequential physical vapor deposition of C60 and tetraphenylporphyrin (H2TPP) layers, focusing on the effect of the interfaces on the charge transfer processes. Absorbance spectra indicate noncovalent-like π-stacking, with the increment of fullerene interfaces shifting the porphyrin Soret band toward the blue. Similarly, surface photovoltage measurements in the multilayer systems show that as the number of interfaces increases, so does the photogeneration of charge. Charge separation follows carrier generation given that the recombination time, associated to trap states, decreases. This behavior indicates that the Donor-Acceptor nature of the fullerene-porphyrin bilayer system is conserved, and even enhanced in the multilayer film, and that the number of interfaces aids to the formation of selective paths for charge carrier collection, demonstrating its potential in optoelectronic devices.

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30

Chen, Xing, Aziz Khan, Sheng-Nan Zou, Yun Li, Qi-Sheng Tian, Cheng Zhong, Man-Keung Fung, Zuo-Quan Jiang, and Liang-Sheng Liao. "Dimers with thermally activated delayed fluorescence (TADF) emission in non-doped device." Journal of Materials Chemistry C 9, no. 14 (2021): 4792–98. http://dx.doi.org/10.1039/d1tc00428j.

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31

Pu, Xiaojuan, Ying Wei, Xiaolong Li, Haonan Feng, Xiaowen Liang, Jie Feng, Jing Sun, Xuefeng Yu, and Qi Guo. "Study on Total Ionizing Dose Effect of Silicon Carbide Metal Oxide Semiconductor Field-Effect Transistors at High and Low Dose Rates." Journal of Nanoelectronics and Optoelectronics 17, no. 5 (May 1, 2022): 809–13. http://dx.doi.org/10.1166/jno.2022.3254.

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The total ionizing dose (TID) radiation effect of silicon carbide metal oxide semiconductor field-effect transistors (SiC MOSFETs) was investigated at different dose rates. The influence of irradiation dose rate on the transfer characteristic curves of the devices was investigated. And the threshold voltage, oxide trap charge, interface state, and peak transconductance et al. were further extracted based on the transfer curve. The results show that the degradation degree of irradiated devices varies at different dose rates due to the different factors. The degradation of the device at high dose rate is due to the radiation-induced oxide trap charge in the gate oxide layer, while the reason of the degradation at low dose rate is the radiation-induced oxide trap charges and interface state simultaneously, which have opposite effects on the devices, and the degradation degree depends on the competition between the two.

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32

Melianas, Armantas, Nikolaos Felekidis, Yuttapoom Puttisong, Stefan C. J. Meskers, Olle Inganäs, Weimin M. Chen, and Martijn Kemerink. "Nonequilibrium site distribution governs charge-transfer electroluminescence at disordered organic heterointerfaces." Proceedings of the National Academy of Sciences 116, no. 47 (November 5, 2019): 23416–25. http://dx.doi.org/10.1073/pnas.1908776116.

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The interface between electron-donating (D) and electron-accepting (A) materials in organic photovoltaic (OPV) devices is commonly probed by charge-transfer (CT) electroluminescence (EL) measurements to estimate the CT energy, which critically relates to device open-circuit voltage. It is generally assumed that during CT-EL injected charges recombine at close-to-equilibrium energies in their respective density of states (DOS). Here, we explicitly quantify that CT-EL instead originates from higher-energy DOS site distributions significantly above DOS equilibrium energies. To demonstrate this, we have developed a quantitative and experimentally calibrated model for CT-EL at organic D/A heterointerfaces, which simultaneously accounts for the charge transport physics in an energetically disordered DOS and the Franck–Condon broadening. The 0–0 CT-EL transition lineshape is numerically calculated using measured energetic disorder values as input to 3-dimensional kinetic Monte Carlo simulations. We account for vibrational CT-EL overtones by selectively measuring the dominant vibrational phonon-mode energy governing CT luminescence at the D/A interface using fluorescence line-narrowing spectroscopy. Our model numerically reproduces the measured CT-EL spectra and their bias dependence and reveals the higher-lying manifold of DOS sites responsible for CT-EL. Lowest-energy CT states are situated ∼180 to 570 meV below the 0–0 CT-EL transition, enabling photogenerated carrier thermalization to these low-lying DOS sites when the OPV device is operated as a solar cell rather than as a light-emitting diode. Nonequilibrium site distribution rationalizes the experimentally observed weak current-density dependence of CT-EL and poses fundamental questions on reciprocity relations relating light emission to photovoltaic action and regarding minimal attainable photovoltaic energy conversion losses in OPV devices.

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33

Zhu, Xixiang, Liping Peng, Jinpeng Li, Haomiao Yu, and Yulin Xie. "Formation of a Fast Charge Transfer Channel in Quasi-2D Perovskite Solar Cells through External Electric Field Modulation." Energies 14, no. 21 (November 5, 2021): 7402. http://dx.doi.org/10.3390/en14217402.

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Quasi-2D perovskites solar cells exhibit excellent environmental stability, but relatively low photovoltaic properties, compared with 3D perovskites solar cells. However, charge transport and extraction in quasi-2D perovskite solar cells are still limited by the inevitable quantum well effect, resulting in low power conversion efficiency (PCE). To date, most efforts concentrate on crystal orientation and favorable alignment during materials and films processing. In this paper, we demonstrated that the quasi-2D perovskite [(BA)2(MA)3Pb4I13 (n = 4)] solar cells show an optimized device performance through forming a fast charge transfer channel among 2D quantum wells through external electric field modulation, with appropriate modulation bias and time after the device has been fabricated. Essentially, ions will move directionally due to local polarization in quasi-2D perovskite solar cells under the action of electric field modulation. More importantly, the mobile ions function as a dopant to de-passivate the defects when releasing at grain boundaries, while decreasing built-in potential by applying forward modulation bias with proper modulation time. The capacitance-voltage characteristics indicate that electric field modulation can decrease the charge accumulation and improve the charge collection in quasi-2D perovskite solar cells. Photoluminescence (PL) studies confirm that the non-radiative recombination is reduced by electric field modulation, leading to enhanced charge transfer. Our work indicates that external electric field modulation is an effective method to form a fast charge transfer channel among 2D quantum wells, leading to enhanced charge transfer and charge collection through local polarization toward developing high–performance quasi-2D perovskite devices.

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34

Mohammed, Noor, Rui Wang, Robert W. Jackson, Yeonsik Noh, Jeremy Gummeson, and Sunghoon Ivan Lee. "ShaZam." Proceedings of the ACM on Interactive, Mobile, Wearable and Ubiquitous Technologies 5, no. 2 (June 23, 2021): 1–25. http://dx.doi.org/10.1145/3463505.

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In this work, we investigate a wireless power transfer technology that can unobtrusively charge wearable devices while users interact with everyday objects, such as an office desk, laptop, or car. We design and develop our solution, ShaZam, that exploits the human body as a medium to transfer Radio Frequency (RF) energy-carrier signals from minimally-instrumented daily objects to wearable devices. We focus on establishing the technical groundwork of the proposed technology by incorporating the capacitive coupling mechanism, in which the forward signal path is established through the human body, and the return path is established via capacitive coupling to the surrounding environment. To showcase the feasibility of our technology, we investigate three different use scenarios---i.e., interacting with a keyboard on a desk, a laptop, and the steering wheel of a car---to transfer power to a wrist-worn device. Using data obtained from ten healthy individuals within a setting where uncontrolled electromagnetic interference was relatively low, we demonstrate that we can transfer approximately 0.5 mW - 1 mW of DC power to the wrist-worn device. We also investigate several critical environmental and design parameters that could affect the power transfer and offer design guidelines that optimize performance. Our initial results suggest the potential for a new design paradigm towards completely charge-free wearable devices.

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35

Bilhorn, R. B., J. V. Sweedler, P. M. Epperson, and M. B. Denton. "Charge Transfer Device Detectors for Analytical Optical Spectroscopy—Operation and Characteristics." Applied Spectroscopy 41, no. 7 (September 1987): 1114–25. http://dx.doi.org/10.1366/0003702874447680.

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This article is the first in a two-part series describing the operation, characteristics, and application of a new class of solid-state multichannel UV-visible detectors. In this paper, charge transfer devices (CTDs) are described. Detector characteristics pertinent to spectroscopic application—including quantum efficiency, read noise, dark count rate, and available formats—are emphasized. Unique capabilities, such as the ability to nondestructively read out the detector array and the ability to alter the effective detector element size by a process called binning, are described. CTDs with peak quantum efficiencies over 80% and significant responsivity over the wavelength range of 0.1 nm to 1100 nm are discussed. Exceptionally low dark count rates, which allow integration times of up to many hours and read noises more than two orders of magnitude lower than those read by commercially available PDA detectors, contribute to the outstanding performance offered by these detectors.

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36

Kiriya, Daisuke. "(Invited) Metallic Transport Behaviors in Monolayer and Multi-Layer MoS₂ By Surface-Charge Transfer Interaction with Redox-Active Molecules." ECS Meeting Abstracts MA2022-02, no. 36 (October 9, 2022): 1312. http://dx.doi.org/10.1149/ma2022-02361312mtgabs.

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In the last decade, transition metal chalcogenides (TMDCs), e.g., MoS2 and WSe2, have gathered attention as semiconducting 2D materials. Modulation of carrier concentrations in TMDCs is a crucial matter for applying to semiconductor devices. So far, we have developed a method to gain the carrier concentrations of MoS2 by a junction with organic molecules and achieved obtaining a degenerately doped state in the MoS2. The mechanism of the doping is a surface-charge transfer interaction at the interface. Although the transfer characteristic behaviors show the degenerately doped state (small ON/OFF ratio), the details of the transport behavior have not been well understood. In this presentation, I will discuss the details of the device characteristics of the monolayer and multilayer MoS2 metal-oxide-semiconductor field-effect-transistors (MOSFETs) with a junction of redox-active molecules in a manner of the surface-charge transfer interaction. The devices were fabricated via standard lithography (e-beam and photolithography) techniques to prepare each monolayer and multilayer MoS2 MOSFETs. Transport properties in the MoS2 MOSFETs were measured in the as-prepared device and the device after the molecular doping. The dopant molecule is benzyl viologen (BV) molecule which is known as a redox-active molecule with high-reduction potential. After the doping with BV molecules, the MoS2 MOSFET showed a small ON/OFF ratio in the transfer characteristic curves, indicating a degenerately doped state. The identical device further showed the metallic behavior in the temperature dependence (the conductivity increases with decreasing the temperature). Both monolayer and multilayer MoS2 MOSFETs showed similar metallic behavior. This metallic transport behavior changes to an insulative regime when applying gate-voltage to reduce the carrier concentrations in the channel MoS2. Therefore, the gate-electrostatic induced metal-insulator-transition was suggested. At the conference, I will discuss the details of the transport behaviors, gate-potential and temperature dependence of the contact resistance. In addition, I will also discuss potential candidates of other molecules for obtaining doping to TMDCs for going forward the 2D materials-based electronics. REF: Matsuyama, et al., "Metallic transport in monolayer and multilayer molybdenum disulfides by molecular surface-charge transfer doping", ACS Appl. Mater. Interfaces, 2022, 14, 8163-8170.

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37

Enrico, E., L. Croin, E. Strambini, and F. Giazotto. "Single charge transport in a fully superconducting SQUISET locally tuned by self-inductance effects." AIP Advances 12, no. 5 (May 1, 2022): 055122. http://dx.doi.org/10.1063/5.0084168.

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We present a single-electron device for the manipulation of charge states via quantum interference in nanostructured electrodes. Via self-inductance effects, we induce two independent magnetic fluxes in the electrodes and we demonstrate sensitivity to single charge states and magnetic field at variable temperature. Moreover, our approach allows us to demonstrate local and independent control of the single-particle conductance between nano-engineered tunnel junctions in a fully superconducting quantum interference single-electron transistor, thereby increasing the flexibility of our single-electron transistors. Our devices show a robust modulation of the current-to-flux transfer function via control currents while exploiting the single-electron filling of a mesoscopic superconducting island. Further applications of the device concept to single charge manipulation and magnetic-flux sensing are also discussed.

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38

Nakayama, Ken-ichi, Tatsuya Okura, Yuki Okuda, Jun Matsui, Akito Masuhara, Tsukasa Yoshida, Matthew Schuette White, et al. "Single-Component Organic Solar Cells Based on Intramolecular Charge Transfer Photoabsorption." Materials 14, no. 5 (March 4, 2021): 1200. http://dx.doi.org/10.3390/ma14051200.

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Conjugated donor–acceptor molecules with intramolecular charge transfer absorption are employed for single-component organic solar cells. Among the five types of donor–acceptor molecules, the strong push–pull structure of DTDCPB resulted in solar cells with high JSC, an internal quantum efficiency exceeding 20%, and high VOC exceeding 1 V with little photon energy loss around 0.7 eV. The exciton binding energy (EBE), which is a key factor in enhancing the photocurrent in the single-component device, was determined by quantum chemical calculation. The relationship between the photoexcited state and the device performance suggests that the strong internal charge transfer is effective for reducing the EBE. Furthermore, molecular packing in the film is shown to influence photogeneration in the film bulk.

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39

Sweedler, Jonathan V., Rafi D. Jalkian, and M. Bonner Denton. "A Linear Charge-Coupled Device Detector System for Spectroscopy." Applied Spectroscopy 43, no. 6 (August 1989): 953–62. http://dx.doi.org/10.1366/0003702894203976.

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The spectroscopically important performance capabilities of a linear charge-coupled device detector system, along with the methods used to evaluate the detector performance, are described. The linearity, read noise, full-well capacity, charge transfer efficiency, and ultraviolet to near-infrared quantum efficiency of the detector are presented along with the methods required to operate the detector in unconventional modes allowing low noise and antiblooming operation. With the antiblooming mode of operation, the detector performance is shown to be unaffected by light overloads hundreds of times over the saturation level. The performance of the detector for high-resolution diagnostic studies of hollow cathode lamps as well as for molecular fluorescence is presented.

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40

Jiang, Yuanyuan, and Xiaozhang Zhu. "High-Performance Ternary Organic Solar Cells Enabled by Synergizing Fullerene and Non-fullerene Acceptors." Organic Materials 03, no. 02 (March 31, 2021): 254–76. http://dx.doi.org/10.1055/a-1472-3989.

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With the development of the non-fullerene acceptors (NFAs), the use of ternary organic photovoltaic devices based on a fullerene acceptor and a NFA is now widespread, and the merits of both acceptor types can be fully utilized. However, the effective approach of enhancing device performance is adjusting the charge dynamics and the thin-film morphology of the active layer via introducing the second acceptor, which would significantly impact the open-circuit voltage, the short-circuit current, and the fill factor, thus strongly affecting device efficiency. The functions of the second acceptor in a ternary organic solar cell with a fullerene acceptor and a NFA are summarized here. These include a broader absorption spectrum; formation of a cascade energy level or energy transfer; modified thin-film morphology including phase separation, effects on crystallinity, size, and purity of domain; and vertical distribution along with improved charge dynamics like exciton dissociation and charge transport, collection, and recombination. Then, we discuss the hierarchical morphology in ternary solar cells, which may benefit device performance, and the outlook of the ternary device.

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41

Li, Shuang-Bao, Yu-Ai Duan, Yun Geng, Hong-Ze Gao, Yong-Qing Qiu, and Zhong-Min Su. "Theoretical design and characterization of pyridalthiadiazole-based chromophores with fast charge transfer at donor/acceptor interface toward small molecule organic photovoltaics." RSC Advances 5, no. 37 (2015): 29401–11. http://dx.doi.org/10.1039/c5ra00785b.

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42

Sun, Jian, Manoharan Muruganathan, and Hiroshi Mizuta. "Room temperature detection of individual molecular physisorption using suspended bilayer graphene." Science Advances 2, no. 4 (April 2016): e1501518. http://dx.doi.org/10.1126/sciadv.1501518.

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Detection of individual molecular adsorption, which represents the ultimate resolution of gas sensing, has rarely been realized with solid-state devices. So far, only a few studies have reported detection of individual adsorption by measuring the variation of electronic transport stemming from the charge transfer of adsorbate. We report room-temperature detection of the individual physisorption of carbon dioxide molecules with suspended bilayer graphene (BLG) based on a different mechanism. An electric field introduced by applying back-gate voltage is used to effectively enhance the adsorption rate. A unique device architecture is designed to induce tensile strain in the BLG to prevent its mechanical deflection onto the substrate by electrostatic force. Despite the negligible charge transfer from a single physisorbed molecule, it strongly affects the electronic transport in suspended BLG by inducing charged impurity, which can shut down part of the conduction of the BLG with Coulomb impurity scattering. Accordingly, we can detect each individual physisorption as a step-like resistance change with a quantized value in the BLG. We use density functional theory simulation to theoretically estimate the possible resistance response caused by Coulomb scattering of one adsorbed CO2 molecule, which is in agreement with our measurement.

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43

Li Yapeng, 李亚鹏, and 何斌 He Bin. "Modulation Transfer Function Assessment of Spaceborne Linear Charge-Coupled Device Subpixel Imaging." Laser & Optoelectronics Progress 50, no. 12 (2013): 121102. http://dx.doi.org/10.3788/lop50.121102.

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44

Lee, Chang-Lyoul. "Electrical Bistable Characteristics of Organic Charge Transfer Complex for Memory Device Applications." Applied Science and Convergence Technology 24, no. 6 (November 30, 2015): 278–83. http://dx.doi.org/10.5757/asct.2015.24.6.278.

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45

Mo, Hin-Wai, Tsz-Wai Ng, Chap-Hang To, Ming-Fai Lo, J. Antonio Zapien, and Chun-Sing Lee. "Infrared organic photovoltaic device based on charge transfer interaction between organic materials." Organic Electronics 14, no. 1 (January 2013): 291–94. http://dx.doi.org/10.1016/j.orgel.2012.09.044.

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46

Tamuliene, J., M. L. Balevicius, and A. Tamulis. "How Has the Bridge Fragment Chosen to Design Charge Transfer Molecular Device?" Structural Chemistry 15, no. 6 (December 2004): 579–85. http://dx.doi.org/10.1007/s11224-004-0733-0.

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47

Li, Sina, Jielian Zhang, Yan Li, Kai Zhang, Lingyu Zhu, Wei Gao, Jingbo Li, and Nengjie Huo. "Anti-ambipolar and polarization-resolved behavior in MoTe₂ channel sensitized with low-symmetric CrOCl." Applied Physics Letters 122, no. 8 (February 20, 2023): 083503. http://dx.doi.org/10.1063/5.0133455.

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Atomically thin two-dimensional (2D) materials make it possible to create a variety of van der Waals (vdW) heterostructures with different physical features and attributes, which enables the growth of innovative electronics and optoelectronics applications. The band alignment and charge transfer play a crucial role in the physical and optoelectrical properties of the vdW heterostructure. Here, we design a vdW heterojunction device comprising low-symmetric CrOCl to induce a stable anti-ambipolar behavior and polarization-sensitive photodetection performance. 2D CrOCl exhibits strong in-plane anisotropy and linear dichroism, and an anti-ambipolar transport behavior is observed in a MoTe2 channel due to the gate-tunable band bending and charge transfer at MoTe2/CrOCl interface. The devices also exhibit well photodetection performance with a responsivity of 1.05 A/W and a temporal response of 970 μs. Owing to the anisotropic CrOCl serving as a photosensitizing layer, the device achieves the capability of polarization-sensitive photodetection with a photocurrent dichroic ratio up to ∼6. This work offers a valid device model and design strategy to realize the versatile optoelectronics, including the anti-ambipolar transistor and polarimetric photodetectors.

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48

Kirui, Joseph K., Solomon Akin Olaleru, Lordwell Jhamba, Daniel Wamwangi, Kittessa Roro, Adam Shnier, Rudolph Erasmus, and Bonex Mwakikunga. "Elucidating the Trajectory of the Charge Transfer Mechanism and Recombination Process of Hybrid Perovskite Solar Cells." Materials 14, no. 11 (May 21, 2021): 2698. http://dx.doi.org/10.3390/ma14112698.

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Perovskite-based solar cells (PSCs) have attracted attraction in the photovoltaic community since their inception in 2009. To optimize the performance of hybrid perovskite cells, a primary and crucial strategy is to unravel the dominant charge transport mechanisms and interfacial properties of the contact materials. This study focused on the charge transfer process and interfacial recombination within the n–i–p architecture of solar cell devices. The motivation for this paper was to investigate the impacts of recombination mechanisms that exist within the interface in order to quantify their effects on the cell performance and stability. To achieve our objectives, we firstly provided a rationale for the photoluminescence and UV-Vis measurements on perovskite thin film to allow for disentangling of different recombination pathways. Secondly, we used the ideality factor and impedance spectroscopy measurements to investigate the recombination mechanisms in the device. Our findings suggest that charge loss in PSCs is dependent mainly on the configuration of the cells and layer morphology, and hardly on the material preparation of the perovskite itself. This was deduced from individual analyses of the perovskite film and device, which suggest that major recombination most likely occur at the interface.

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49

Dimitrov, Vladimir, and Simon Woodward. "Capturing Waste Heat Energy with Charge-Transfer Organic Thermoelectrics." Synthesis 50, no. 19 (July 12, 2018): 3833–42. http://dx.doi.org/10.1055/s-0037-1610208.

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Electrically conducting organic salts, known for over 60 years, have recently demonstrated new abilities to convert waste heat directly into electrical power via the thermoelectric effect. Multiple opportunities are emerging for new structure–property relationships and for new materials to be obtained through synthetic organic chemistry. This review highlights key aspects of this field, which is complementary to current efforts based on polymeric, nanostructured or inorganic thermoelectric materials and indicates opportunities whereby mainstream organic chemists can contribute.1 What Are Thermoelectrics? And Why Use Them?2 Current Organic and Hybrid Thermoelectrics3 Unique Materials from Tetrathiotetracenes4 Synthesis of Tetrathiotetracenes5 Materials and Device Applications6 Future Perspectives

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Noel, Nakita K., Severin N. Habisreutinger, Alba Pellaroque, Federico Pulvirenti, Bernard Wenger, Fengyu Zhang, Yen-Hung Lin, et al. "Interfacial charge-transfer doping of metal halide perovskites for high performance photovoltaics." Energy & Environmental Science 12, no. 10 (2019): 3063–73. http://dx.doi.org/10.1039/c9ee01773a.

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