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1
Klymko, N. R., J. A. Casey, L. Tai, J. A. Fitzsimmons, and F. Adar. "Role of Raman Microprobe Spectroscopy in the Characterization of Microelectronic Materials." Microscopy and Microanalysis 7, S2 (August 2001): 150–51. http://dx.doi.org/10.1017/s1431927600026829.
Анотація:
The production of semiconductor chips and packaging materials involves the use of a wide array of materials, from solvents and polymers, to photoresists, to metal and dielectric layers, to conductive and thermal pastes. Characterization of these materials, both in raw form and as formulated for in-process use, is integral to successful use of them in microelectronic manufacturing. Physical and chemical analytical techniques are employed to determine parameters such as composition, cure state, and interface chemistry. More often than not, it is the successful combination of complementary analyses which provide the complete understanding of material parameters needed.This paper reports the use of Raman microprobe spectroscopy as a characterization technique for microelectronic materials. Several examples will be given, illustrating the type of information which can be obtained and the complementary use of Raman spectroscopy in conjunction with other analytical techniques such as Fourier transform infrared spectroscopy (FTIR) and x-ray photoelectron spectroscopy (XPS) to characterize microelectronic packaging materials and organic materials used in semiconductor manufacture.
2
Busch, Brett W., Olivier Pluchery, Yves J. Chabal, David A. Muller, Robert L. Opila, J. Raynien Kwo, and Eric Garfunkel. "Materials Characterization of Alternative Gate Dielectrics." MRS Bulletin 27, no. 3 (March 2002): 206–11. http://dx.doi.org/10.1557/mrs2002.72.
Анотація:
AbstractContinued scaling of microelectronic devices is demanding that alternatives to SiO2 as the gate dielectric be developed soon. This in turn has placed enormous pressure on the abilities of physical characterization techniques to address critical issues such as film and interface structure and composition, transport properties, and thermal or chemical stability. This article summarizes the strengths and capabilities of four techniques used for the materials characterization of alternative gate dielectrics: scanning transmission electron microscopy (STEM) in conjunction with electron energy-loss spectroscopy (EELS), medium-energy ion scattering (MEIS), infrared-absorption spectroscopy (IRAS), and x-ray photoelectron spectroscopy (XPS). The complementary nature of these techniques has allowed for a detailed picture of the various properties of alternative gate dielectrics, and in particular of the dielectric/silicon interface. Critical issues and features of several important alternative gate dielectrics, ZrO2, AI2O3, Y2O3, and Gd2O3, are explored in light of the well-studied SiO2/Si system.
3
Zhou, Shenglin, Zhaohui Yang, and Xiaohua Zhang. "Characterization tools of thin polymer films." International Journal of Modern Physics B 32, no. 18 (July 15, 2018): 1840007. http://dx.doi.org/10.1142/s0217979218400076.
Анотація:
Materials having nanoscale structures have shown potentials for applications in microelectronics, biomedicine and energy storage. A continuing challenge is the capability of fabricating multi-function nanodevices with controlled nanostructures and excellent performances. Measurement platforms, which provide accurate and detailed information on internal structures, surface morphologies, mechanical properties and electrochemical properties are a key to this challenge. In this review, we, in particular, highlight the crucial role of measurement techniques in quantifying these nanostructures and their properties.
4
Huang, Zhiheng, Ziyan Liao, Kaiwen Zheng, Xin Zeng, Yuezhong Meng, Hui Yan, and Yang Liu. "Microstructural Hierarchy Descriptor Enabling Interpretative AI for Microelectronic Failure Analysis." EDFA Technical Articles 26, no. 2 (May 1, 2024): 10–18. http://dx.doi.org/10.31399/asm.edfa.2024-2.p010.
Анотація:
Abstract This article proposes the MicroStructural Hierarchy Descriptor (µSHD) as a systematic and quantitative approach to spectra and image data in microelectronics failure analysis. It discusses concrete routes for employing µSHD directly as the quantitative descriptor for supervised and unsupervised machine learning. The authors propose that µSHD tools can be used to automate and improve characterization techniques and image processing and analysis protocols.
5
Mouro, João, Rui Pinto, Paolo Paoletti, and Bruno Tiribilli. "Microcantilever: Dynamical Response for Mass Sensing and Fluid Characterization." Sensors 21, no. 1 (December 27, 2020): 115. http://dx.doi.org/10.3390/s21010115.
Анотація:
A microcantilever is a suspended micro-scale beam structure supported at one end which can bend and/or vibrate when subjected to a load. Microcantilevers are one of the most fundamental miniaturized devices used in microelectromechanical systems and are ubiquitous in sensing, imaging, time reference, and biological/biomedical applications. They are typically built using micro and nanofabrication techniques derived from the microelectronics industry and can involve microelectronics-related materials, polymeric materials, and biological materials. This work presents a comprehensive review of the rich dynamical response of a microcantilever and how it has been used for measuring the mass and rheological properties of Newtonian/non-Newtonian fluids in real time, in ever-decreasing space and time scales, and with unprecedented resolution.
6
Murray, Conal E., A. J. Ying, S. M. Polvino, I. C. Noyan, and Z. Cai. "Nanoscale strain characterization in microelectronic materials using X-ray diffraction." Powder Diffraction 25, no. 2 (June 2010): 108–13. http://dx.doi.org/10.1154/1.3394205.
Анотація:
The engineering of strained semiconductor materials represents an important aspect of the enhancement in CMOS device performance required for current and future generations of microelectronic technology. An understanding of the mechanical response of the Si channel regions and their environment is key to the prediction and design of device operation. Because of the complexity of the composite geometries associated with microelectronic circuitry, in situ characterization at a submicron resolution is necessary to verify the predicted strain distributions. Of the measurement techniques commonly used for strain characterization, synchrotron-based X-ray microbeam diffraction represents the best nondestructive method to provide spatially resolved information. The mapping of strain distributions in silicon-on-insulator (SOI) features induced by overlying silicon nitride structures and embedded heteroepitaxial features adjacent to SOI device channels are presented. The interaction regions of the SOI strain were observed to extend large distances from the SOI/stressor interfaces leading to significant overlap in the strain distributions at technically relevant dimensions. Experimental data were also compared to several mechanical models to assess their validity in predicting these strain distributions.
7
Jansen, K. M. B., V. Gonda, L. J. Ernst, H. J. L. Bressers, and G. Q. Zhang. "State-of-the-Art of Thermo-Mechanical Characterization of Thin Polymer Films." Journal of Electronic Packaging 127, no. 4 (December 22, 2004): 530–36. http://dx.doi.org/10.1115/1.2070092.
Анотація:
In microelectronic industry, thin polymer layers are one of the more commonly used product constituents. Examples are glue layers, coatings, and dielectric layers. The thicknesses of these films vary from a few tens of nanometers to over a hundred micrometers. Since at film thicknesses below 100nm the thermal and mechanical properties start to deviate from those in the bulk, adequate characterization techniques are required. In the present paper we will report the results of an extensive literature search on the state-of-the-art of thermo-mechanical thin film characterization methods, such as the substrate curvature test, nanoindentation technique, bulge test, and impulsive stimulated thermal scattering.
8
Guégan, Hervé. "Use of a Nuclear Microprobe in Electronic Device Characterization." EDFA Technical Articles 9, no. 4 (November 1, 2007): 14–19. http://dx.doi.org/10.31399/asm.edfa.2007-4.p014.
Анотація:
Abstract Microelectronics failure analysis is based on several approaches to study and understand the origin of failure. In addition to “classic” elemental methods (SIMS, ESCA, etc.), there are a number of less-common techniques that can be valuable but require significant equipment investment, specialized operators, and administrative infrastructure to make them available to analysts, if needed. Ion beam analysis methods (RBS, PIXE, NRA), found at the Bordeaux Nuclear Research Center (France), are examples of these specialized tool sets. The capabilities and improved sensitivities of this site for device examination are demonstrated by several examples.
9
Ruales, Mary, and Kinzy Jones. "Characterization of silicate sensors on Low Temperature Cofire Ceramic (LTCC) substrates using DSC and XRD techniques." International Symposium on Microelectronics 2012, no. 1 (January 1, 2012): 000598–603. http://dx.doi.org/10.4071/isom-2012-wa31.
Анотація:
Characterization of Silicate sensors using Differential Scanning Calorimeter (DSC), X-ray Diffraction (XRD) and Scanning Electron microscopy (SEM) is presented. These silicate sensors are based on three primary materials: Li2SiO3, K2SiO3, and CaSiO3. Silicate powders were transform into adequate inks that were added to a Low Temperature Cofire Ceramic (LTCC) substrates with thick film technology using screen printing which continues to offer innovative and cost effective solutions to the increasing demands for higher circuit densities. These silicate sensors are low power-high temperature heated ceramic sensors to detect halogen gases. Every sensor responded to the gas showing stability and reproducibility. Phase diagrams for these silicates were used to produce different combinations. The use of the eutectoid point in the phase diagrams was critical to reduce the operating temperature. Testing and characterization of these silicate sensors is presented. The impact of various parameters (e.g. materials design, structure, properties, performance and processing) for the sensors including their relationships for electronic packaging was reviewed and it was found critical to determine the microelectronics packaging reliability and integrity. The fundamentals of the sensor behavior including the sensitivity as well as response and recovery times were also determined.
10
Nguyen, T. K., L. M. Landsberger, V. Logiudice, and C. Jean. "Electrical characterization of fluorine-implanted gate oxide structures." Canadian Journal of Physics 74, S1 (December 1, 1996): 74–78. http://dx.doi.org/10.1139/p96-836.
Анотація:
In the ongoing quest for thinner and more reliable gate dielectrics for microelectronics, fluorination of gate oxide structures has emerged as a leading technique. In this work, the fluorine is implanted into the polysilicon gate before the poly etch. After the subsequent poly etch and anneal, the samples are not sent through the remainder of the process, but are subjected to electrical reliability stressing by two methods: constant-current Fowler–Nordheim tunnelling stress, and constant-voltage stress (J–t analysis). Two different fluorination cases (doses and implant energies) are studied, along with unimplanted controls. In the fluorinated cases, improvement vs. controls is found in device reliability indicators: mid-gap Dit, Qf, and ΔVth. J–t analysis corroborates the improvement, and the combination of techniques is found to offer a more, comprehensive view of complex variations in fluorinated oxide properties.
11
Coppola, Giuseppe, and Maria Antonietta Ferrara. "Polarization-Sensitive Digital Holographic Imaging for Characterization of Microscopic Samples: Recent Advances and Perspectives." Applied Sciences 10, no. 13 (June 29, 2020): 4520. http://dx.doi.org/10.3390/app10134520.
Анотація:
Polarization-sensitive digital holographic imaging (PS-DHI) is a recent imaging technique based on interference among several polarized optical beams. PS-DHI allows simultaneous quantitative three-dimensional reconstruction and quantitative evaluation of polarization properties of a given sample with micrometer scale resolution. Since this technique is very fast and does not require labels/markers, it finds application in several fields, from biology to microelectronics and micro-photonics. In this paper, a comprehensive review of the state-of-the-art of PS-DHI techniques, the theoretical principles, and important applications are reported.
12
Drouin, D., J. Beauvais, and R. Gauvin. "Characterization of Variations in Schottky Barrier Height in Semiconductor Devices using EBIC Technique." Microscopy and Microanalysis 3, S2 (August 1997): 501–2. http://dx.doi.org/10.1017/s1431927600009399.
Анотація:
Recent developments in microelectronic devices have increased the need for new investigative techniques. Much of the development on Electron Beam Induced Current (EBIC) occurred in the early 70's. Since that time, much of the work has been devoted to using this technique to investigate defects in semiconductor devices. Less attention has been focused on electrical measurement of semiconductor properties.A digital EBIC method to characterize semiconductors has been developed and is presented here. The sample current is measured using a Keithley 670 electrometer controlled through a GPIB interface by a standard computer. The electron beam from the scanning electron microscope (SEM) is synchronized with the current acquisition. All the acquisition is controlled by a Labview virtual instrument (Figure 1).As an example of the performance of this method, a special sample was analyzed. A novel method of resistless lithography process was developed in our laboratory. This technique is dedicated to overcome limits of conventional resist based electron beam lithography.
13
Malisz, Klaudia, Beata Świeczko-Żurek, and Alina Sionkowska. "Preparation and Characterization of Diamond-like Carbon Coatings for Biomedical Applications—A Review." Materials 16, no. 9 (April 27, 2023): 3420. http://dx.doi.org/10.3390/ma16093420.
Анотація:
Diamond-like carbon (DLC) films are generally used in biomedical applications, mainly because of their tribological and chemical properties that prevent the release of substrate ions, extend the life cycle of the material, and promote cell growth. The unique properties of the coating depend on the ratio of the sp3/sp2 phases, where the sp2 phase provides coatings with a low coefficient of friction and good electrical conductivity, while the share of the sp3 phase determines the chemical inertness, high hardness, and resistance to tribological wear. DLC coatings are characterized by high hardness, low coefficient of friction, high corrosion resistance, and biocompatibility. These properties make them attractive as potential wear-resistant coatings in many compelling applications, including optical, mechanical, microelectronic, and biomedical applications. Another great advantage of DLC coatings is that they can be deposited at low temperatures on a variety of substrates and can thus be used to coat heat-sensitive materials, such as polymers. Coating deposition techniques are constantly being improved; techniques based on vacuum environment reactions are mainly used, such as physical vapor deposition (PVD) and chemical vapor deposition (CVD). This review summarizes the current knowledge and research regarding diamond-like carbon coatings.
14
Sciuto, Emanuele Luigi, Corrado Bongiorno, Antonino Scandurra, Salvatore Petralia, Tiziana Cosentino, Sabrina Conoci, Fulvia Sinatra, and Sebania Libertino. "Functionalization of Bulk SiO2 Surface with Biomolecules for Sensing Applications: Structural and Functional Characterizations." Chemosensors 6, no. 4 (November 30, 2018): 59. http://dx.doi.org/10.3390/chemosensors6040059.
Анотація:
Biomolecule immobilization on bulk silicon dioxide (SiO2) is an important aspect in the field of Si-based interfaces for biosensing. The approach used for surface preparation should guarantee not only the stable anchoring of biomolecules but also their structural integrity and biological functioning. In this paper, we review our findings on the SiO2 functionalization process to immobilize a variety of biomolecules, including glucose oxidase, horseradish peroxide, metallothionein, and DNA molecules. Morphological and chemical characterization of SiO2 surfaces after biomolecule immobilization using techniques already employed in the microelectronic industry are presented and discussed. Optical and spectrophotometric analysis revealed the preservation of biomolecules’ activity once they are anchored on the biointerface.
15
Beers, Kimberly, Andrew E. Hollowell, and G. Bahar Basim. "Thin Film Characterization on Cu/SnAg Solder Interface for 3D Packaging Technologies." MRS Advances 5, no. 37-38 (2020): 1929–35. http://dx.doi.org/10.1557/adv.2020.309.
Анотація:
AbstractCopper is a commonly used interconnect metal in microelectronic interconnects due to its exceptional electrical and thermal properties. Particularly in applications of the 2.5 and 3D integration, Cu is utilized in through-silicon-vias (TSVs) and flip chip interconnects between microelectronic chips for providing miniaturization, lower power and higher performance than current 2D packaging approaches. SnAg capped Cu pillars are a common high-density interconnect technology for flip chip bonding. For these interconnects, specific properties of the Cu surface, such as roughness and cleanliness, are an important factor in the process to ensure quality solder bumps. During electroplating, tight processing parameters must be met so that defects are avoided, and high bump uniformity is achieved. An understanding of the interactions at the solder and Cu pillar interface is needed, based on the electroplating parameters, to determine the best method for populating solder on the wafer surface. In this study, surface treatment techniques such as oxygen plasma cleaning were performed on the Cu surfaces and the SnAg plating chemistry for depositing the solder were evaluated through hull cell testing to qualitatively determine the range of current densities to investigate. It was observed that current density while plating played a large role in solder bump deposition morphology. At the higher current densities greater than 60 mA/cm2, bump height non-uniformity and dendritic growth are observed and at lower current densities, less than or equal to 60 mA/cm2, uniform, continuous bump height occurred.
16
Hoummada, Khalid, Dominique Mangelinck, and Alain Portavoce. "Kinetic of Formation of Ni and Pd Silicides: Determination of Interfacial Mobility and Interdiffusion Coefficient by In Situ Techniques." Solid State Phenomena 172-174 (June 2011): 640–45. http://dx.doi.org/10.4028/www.scientific.net/ssp.172-174.640.
Анотація:
The formation of metal (Ni and Pd) silicide thin films on a Si wafer is analyzed using differential scanning calorimetry (DSC) and isothermal X ray diffraction measurements. The sensitivity of DSC is remarkable even in this experimental Ni/Si and Pd/Si(001) and allows to show two steps of growth for a phase formation (lateral and normal growth). This technique is shown being of main interest for characterization of silicide formation during microelectronic industrial processes. Combining X-ray diffraction measurements and DSC measurements, the interface mobilities and the effective diffusion coefficient characterizing Ni2Si and Pd2Si growth are measured. These quantities as well as the interface mobilility for lateral growth have been determined by using a model taken into account the nucleation and lateral growth as well as a normal growth controlled by diffusion and interface reaction.
17
Cara, Eleonora, Irdi Murataj, Gianluca Milano, Natascia De Leo, Luca Boarino, and Federico Ferrarese Lupi. "Recent Advances in Sequential Infiltration Synthesis (SIS) of Block Copolymers (BCPs)." Nanomaterials 11, no. 4 (April 13, 2021): 994. http://dx.doi.org/10.3390/nano11040994.
Анотація:
In the continuous downscaling of device features, the microelectronics industry is facing the intrinsic limits of conventional lithographic techniques. The development of new synthetic approaches for large-scale nanopatterned materials with enhanced performances is therefore required in the pursuit of the fabrication of next-generation devices. Self-assembled materials as block copolymers (BCPs) provide great control on the definition of nanopatterns, promising to be ideal candidates as templates for the selective incorporation of a variety of inorganic materials when combined with sequential infiltration synthesis (SIS). In this review, we report the latest advances in nanostructured inorganic materials synthesized by infiltration of self-assembled BCPs. We report a comprehensive description of the chemical and physical characterization techniques used for in situ studies of the process mechanism and ex situ measurements of the resulting properties of infiltrated polymers. Finally, emerging optical and electrical properties of such materials are discussed.
18
Kumar, Ashok. "Functional Nanomaterials: From Basic Science to Emerging Applications." Solid State Phenomena 201 (May 2013): 1–19. http://dx.doi.org/10.4028/www.scientific.net/ssp.201.1.
Анотація:
Moores law predicts the reduction of the device elements size and the advancement of physics with time for the next generation microelectronic industries. Materials and devices sizes and enriched physics are strongly correlated phenomena. Everyday physics moves a step forward from microscale classical physics toward nanoscale quantum phenomenon. Similarly, the vast micro/nanoelectronics needs advancement in growth and characterization techniques and unexplored physics to cope with the 21stcentury market demands. The continuous size reduction of devices stimulates the researchers and technocrats to work on nanomaterials and devices for the next generation technology. The semiconductor industry is also facing the problem of size limitation and has followed Moores law which predicts 16 nm nodes for next generation microelectronic industries. Nanometer is known as the 10 times of an Angstrom unit, where it is common consensus among the scientists that any materials and devices having physical dimensions less than 1000 times of an Angstrom will come under the umbrella of Nanotechnology. This review article focuses on the fundamental aspects of nanoscale materials and devices: (i) definitions and different categories of nanomaterials, (ii) quantum scale physics and technology, (iii) self-assembed nanostructures, (iv) growth conditions and techniques of 0D, 1D, 2D, and 3D dimensional materials, (v) understanding of the multifunctionalities of the nanomaterials, (vi) nanoscale devices for low energy consumption and fast response, (vii) integration of nanoscale materials with Si-based systems, and (viii) major technical challenges.
19
Gauvin, Raynald, Mario Caron, Vincent Fortin, and John F. Currie. "Characterization of Multilayered Structures Using a FEGSEM and X-Ray Microanalysis." Microscopy and Microanalysis 3, S2 (August 1997): 463–64. http://dx.doi.org/10.1017/s143192760000920x.
Анотація:
Microelectronic processes now involve multilayer structures of different materials. It is important to control accurately the thickness and composition of these materials during their processing. The determination of these two physical parameters are usually performed by Elastic Recoil Detection (ERD), by Auger Electron Spectroscopy (AES) and Transmission Electron Microscopy (TEM). However, these techniques are not suitable for analysis on a routine basis. In this context, a quantitative procedure based on EDS X-ray microanalysis in the Scanning Electron Microscope has been developped because of its availability and its speed of analysis. However, this technique requires several measurement of K ratio taken at different voltages which is time consuming. With the advent of Field Emission Gun Scanning Electron Microscopes (FEGSEM), X-ray line scans taken at low electron beam voltage with an EDS system may be an alternative. In this paper, preliminary results using this technique on multilayered materials are presented.To investigate this characterization technique, a AlSiCu(200 nm)/TiN(95 nm)/Ti(40 nm) multilayer metallization structure deposited on Si substrate was used. EDS X-ray line scans were obtained with a Hitachi S-4500 FEGSEM coupled with a Link ISIS 300 EDS system.
20
Trulli, Susan, Craig Armiento, Christopher Laighton, Elicia Harper, Mahdi Haghzadeh, and Alkim Akyurtlu. "Additive Packaging for Microwave Applications." International Symposium on Microelectronics 2017, no. 1 (October 1, 2017): 000768–72. http://dx.doi.org/10.4071/isom-2017-thp53_148.
Анотація:
Abstract This paper describes efforts to apply Additive Manufacturing (AM) technologies to microelectronic packaging of devices and subsystems for RF and microwave applications. This work, which was conducted at the Raytheon-University of Massachusetts Lowell Research Institute (RURI), is directed at a variety of applications such as 2D and 3D phased array antennas and tunable frequency selective surfaces (FSS). This paper will describe research on device modeling/simulation, formulation of novel functional inks, development of process/printing technologies and new material characterization techniques. Important elements of the additive packaging efforts include the integration of active die with printed components, replacement of wire bonds with printed chip interconnects and the development of integrated, printed connectors. Research on printed, tunable microwave components, such as varactors and phase shifters, are also discussed.
21
Pagan, Darren C., Md A. J. Rasel, Rachel E. Lim, Dina Sheyfer, Wenjun Liu, and Aman Haque. "Non-destructive depth-resolved characterization of residual strain fields in high electron mobility transistors using differential aperture x-ray microscopy." Journal of Applied Physics 132, no. 14 (October 14, 2022): 144503. http://dx.doi.org/10.1063/5.0109606.
Анотація:
Localized residual stress and elastic strain concentrations in microelectronic devices often affect the electronic performance, resistance to thermomechanical damage, and, likely, radiation tolerance. A primary challenge for the characterization of these concentrations is that they exist over sub-[Formula: see text]m length-scales, precluding their characterization by more traditional residual stress measurement techniques. Here, we demonstrate the use of synchrotron x-ray-based differential aperture x-ray microscopy (DAXM) as a viable, non-destructive means to characterize these stress and strain concentrations in a depth-resolved manner. DAXM is used to map two-dimensional strain fields between the source and the drain in a gallium nitride (GaN) layer within high electron mobility transistors (HEMTs) with sub-[Formula: see text]m spatial resolution. Strain fields at various positions in both pristine and irradiated HEMT specimens are presented in addition to a preliminary stress analysis to estimate the distribution of various stress components within the GaN layer. [Formula: see text]-irradiation is found to significantly reduce the lattice plane spacing in the GaN along the sample normal direction, which is attributed to radiation damage in transistor components bonded to the GaN during irradiation.
22
Portavoce, Alain, Khalid Hoummada, and Lee Chow. "Coupling Secondary Ion Mass Spectrometry and Atom Probe Tomography for Atomic Diffusion and Segregation Measurements." Microscopy and Microanalysis 25, no. 2 (January 30, 2019): 517–23. http://dx.doi.org/10.1017/s1431927618015623.
Анотація:
AbstractFor a long time, secondary ion mass spectrometry (SIMS) was the only technique allowing impurity concentrations below 1 at% to be precisely measured in a sample with a depth resolution of few nanometers. For example, SIMS is the classical technique used in microelectronics to study dopant distribution in semiconductors and became, after radiotracers were forsaken, the principal tool used for atomic transport characterization (diffusion coefficient measurements). Due to the lack of other equivalent techniques, sometimes SIMS could be used erroneously, especially when the analyzed solute atoms formed clusters, or for interfacial concentration measurements (segregation coefficient measurements) for example. Today, concentration profiles measured by atom probe tomography (APT) can be compared to SIMS profiles and allow the accuracy of SIMS measurements to be better evaluated. However, APT measurements can also carry artifacts and limitations that can be investigated by SIMS. After a summary of SIMS and APT measurement advantages and disadvantages, the complementarity of these two techniques is discussed, particularly in the case of experiments aiming to measure diffusion and segregation coefficients.
23
Mustafa, M. K., U. Majeed, and Y. Iqbal. "Effect on Silicon Nitride thin Films Properties at Various Powers of RF Magnetron Sputtering." International Journal of Engineering & Technology 7, no. 4.30 (November 30, 2018): 39. http://dx.doi.org/10.14419/ijet.v7i4.30.22000.
Анотація:
Silicon nitride thin films have numerous applications in microelectronics and optoelectronics fields due to their unique properties. In this work, silicon nitride thin films were produced using radio frequency (R.F.) magnetron sputtering technique at various sputtering powers. The prepared thin films were characterized with XRD, FE-SEM, FTIR, surface profiler, AFM and spectral reflectance techniques for structure, surface morphology, chemical bonding information, growth rate, surface roughness and optical properties. The results showed that silicon nitride thin films were amorphous in nature. The films were smooth and densely packed with no voids or cracks at the surface. FTIR characterization informed about Si-N bonding existence which confirmed the formation of silicon nitride films. The sputtering power showed the impetus effect on growth rate, surface roughness and optical properties of produced films.
24
Booth, James C., Nathan Orloff, Christian Long, Aaron Hagerstrom, Angela Stelson, Nicholas Jungwirth, and Luckshitha Suriyasena Liyanage. "(Invited, Digital Presentation) Nonlinear and Electro-Thermo-Mechanical Effects in Heterogeneous Electronics at Microwave Frequencies." ECS Meeting Abstracts MA2022-02, no. 17 (October 9, 2022): 862. http://dx.doi.org/10.1149/ma2022-0217862mtgabs.
Анотація:
Materials properties are an essential component for the accurate modeling of integrated devices and circuits. The accuracy of such models depends explicitly on the accuracy of the input material parameters and interfaces between them. With the trend toward increasing heterogeneous integration, the relationships between electromagnetic, thermal, and mechanical material properties of heterogeneously integrated devices are even more important. Recent trends toward co-design emphasize the optimization of all aspects of circuit performance from the beginning, rather than sequentially optimizing the electromagnetic, thermal, mechanical characteristics. It can be critical for modeling success to understand, for example, where losses due to an electromagnetic signal are significant, as those losses can lead to energy dissipation with the subsequent temperature rise being a function of local thermal properties such as the thermal conductivity and heat capacity. Beyond losses, nonuniform temperature distributions generate mechanical stress that can impact interfaces between materials with dissimilar coefficients of thermal expansion. Furthermore, change in temperature and stress can lead to changes in the linear electromagnetic properties, resulting in changes in signal propagation and the generation of nonlinear effects. Material properties are also important as they connect device response to underlying materials physics. This connection allows one to exploit different physical phenomena to add functionality at materials level, and to understand and mitigate non-idealities such as nonlinear response. As such, it is critically important to quantify nonlinear electromagnetic and electro-thermo-mechanical properties of heterogeneous integrated devices. In Fig. 1, the Heckmann diagram shows the electro-thermo-mechanical relations in a crystal, where T, S, E, D, θ, and σ are stress, strain, electric field, electric displacement, temperature, and entropy, respectively. This diagram illustrates the various nonlinear interactions that can be important for determining the overall response of microelectronic devices composed of a wide range of material systems. Here, we present an overview of experimental efforts designed to accurately characterize the linear electromagnetic properties of materials relevant for microelectronics, including dielectrics and conductors as a function of frequency from 100 kHz through 220 GHz. Dispersion and absorption imply frequency dependence of complex quantities such as the dielectric permittivity and magnetic permeability, and this in turn necessitates broadband characterization techniques. We describe efforts to characterize broadband frequency-dependent linear electromagnetic properties over a wide range of temperatures, including cryogenic temperatures relevant for quantum computing, and augment these techniques with approaches to characterize the relevant thermal material parameters. We then describe measurements of nonlinear response of different material systems to quantify the nonlinear relationships between different thermodynamic fields in integrated structures. We conclude with a discussion of the needs for additional metrology to characterize these complex interactions inside complex 3D and packaged microelectronic devices and at buried interfaces within these heterogeneous integrated structures. Figure 1
25
Youngman, R. A. "The Critical Role of Microscopy and Spectroscopy in the Development of New Materials for Microelectronics Packaging." Proceedings, annual meeting, Electron Microscopy Society of America 54 (August 11, 1996): 634–35. http://dx.doi.org/10.1017/s042482010016563x.
Анотація:
It has been over thirty years since sintered aluminum nitride (AIN) has been the focus of many research and development activities in Japan, the U.S., and Europe. Only in the past 5 years has there been significant use of this material in microelectronics. There are many reasons for this considerable time for application including, technology needs and acceptance of a new material. Also important has been the role of materials understanding of AIN through the use of microscopy and spectroscopy. We illustrate the use of both standard and unique characterization techniques to elucidate the nature of the crystalline defects which control the important property of thermal conductivity.The thermal conductivity of pure AIN is 320 W/mK. This value has never been achieved in a sintered ceramic. In order to develop a sintered AIN with a high thermal conductivity it is necessary to understand the factors which control the thermal conductivity.
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Arikpo, John U., and Michael U. Onuu. "Graphene Growth and Characterization: Advances, Present Challenges and Prospects." Journal of Materials Science Research 8, no. 4 (September 30, 2019): 37. http://dx.doi.org/10.5539/jmsr.v8n4p37.
Анотація:
It is about a decade since graphene became a material for serious research by researchers in condensed matter of various nationalities making significant progress. This paper on graphene growth and characterization: advances, present challenges and prospects is therefore timely. Basic topics such as graphene and graphene technology, history and trend of graphene as well as graphene growth and synthesis have been discussed. Also presented are fundamental and mechanical properties, structural and morphological property characterization using different techniques. Graphene in biomedical and radio frequency applications, transparent electronics, integrated circuits, quantum dots, frequency multiplier, optical modulator and piezoelectricity and as a battery super capacitor are some applications and uses of graphene that have been considered. The lowering of the growth temperature of graphene has been found to be beneficial for the compartibility with other materials and processes and could also decrease the impact of cooling-induced wrinkling on the morphology of graphene; the growth on dielectric substrates; being able to resolve many problems associated with metallic growth substrates; better control of both the formation and the extension of additional layers on the graphene through substrate engineering that will result in approaches of graphene that is envisaged are some of the advances and future prospects. Also, the proposed tunable bandgap for graphene which is essential for microelectronics which contributes one of the present challenges is likely to be achieved in the very near future. Although theoretical and computational analyses have proved to have solved the zero bandgap problem of graphene, more convincing approaches that will solve the problem and give way for the fabrication of high performance graphene device are being awaited.
27
Hu, Xiao-Yu, Jun Ouyang, Guo-Chang Liu, Meng-Juan Gao, Lai-Bo Song, Jianfeng Zang, and Wei Chen. "Synthesis and Characterization of the Conducting Polymer Micro-Helix Based on the Spirulina Template." Polymers 10, no. 8 (August 7, 2018): 882. http://dx.doi.org/10.3390/polym10080882.
Анотація:
As one of the most interesting naturally-occurring geometries, micro-helical structures have attracted attention due to their potential applications in fabricating biomedical and microelectronic devices. Conventional processing techniques for manufacturing micro-helices are likely to be limited in cost and mass-productivity, while Spirulina, which shows natural fine micro-helical forms, can be easily mass-reproduced at an extremely low cost. Furthermore, considering the extensive utility of conducting polymers, it is intriguing to synthesize conducting polymer micro-helices. In this study, PPy (polypyrrole), PANI (polyaniline), and PEDOT (poly(3,4-ethylenedioxythiophene)) micro-helices were fabricated using Spirulinaplatensis as a bio-template. The successful formations of the conducting polymer micro-helix were confirmed using scanning electron microscopy (SEM). Fourier transform infrared spectroscopy (FTIR) and Raman and X-ray diffraction (XRD) were employed to characterize the molecular structures of the conducting polymer in micro-helical forms. In the electrochemical characterization, the optimized specific capacitances for the PPy micro-helix, the PANI micro-helix, and the PEDOT micro-helix were found to be 234 F/g, 238 F/g at the scan rate of 5 mV/s, and 106.4 F/g at the scan rate of 10 mV/s, respectively. Therefore, it could be expected that other conducting polymer micro-helices with Spirulina as a bio-template could be also easily synthesized for various applications.
28
Szocinski, Michal. "AFM-assisted investigation of conformal coatings in electronics." Anti-Corrosion Methods and Materials 63, no. 4 (June 6, 2016): 289–94. http://dx.doi.org/10.1108/acmm-09-2014-1426.
Анотація:
Purpose This paper aims to presents a new method of investigation of local properties of conformal coatings utilized in microelectronics. Design/methodology/approach It is based on atomic force microscopy (AFM) technique supplemented with the ability of local electrical measurements, which apart from topography acquisition allows recording of local impedance spectra, impedance imaging and dc current mapping. Potentialities of the proposed AFM-assisted approach have been demonstrated on commercially available epoxy-coated electronic printed boards in as-received state and after six-year service. Findings The technique proved to be capable of identification, spatial localization and characterization of conformal coating defects. Practical implications The proposed approach can be utilized for assessment of protective film state in such demanding fields as electronics or electrotechnics where the classical techniques of anticorrosion coatings investigation cannot be employed due to small element dimensions and relatively low coating thickness. Originality/value The approach adopted by the author is novel in the field of organic coatings investigation.
29
Pantel, R., G. Mascarin, and G. Auvert. "Defect Analysis and Process Development of Microelectronics Devices Using Focused Ion Beam and Energy Filtering Transmission Electron Microscopy." Microscopy and Microanalysis 5, S2 (August 1999): 900–901. http://dx.doi.org/10.1017/s1431927600017827.
Анотація:
1. Introduction.With continuing reductions in semiconductor device dimensions high spatial resolution physical and chemical analysis techniques will be more and more required for defect analysis and process development in the microelectronics field. Transmission Electron Microscopy (TEM) analysis is now extensively used thanks to the fast Focused Ion Beam (FIB) specimen preparation technique which has furthered its development. Recently, we have shown the advantages of adding Electron Energy Loss Spectroscopy (EELS) to FIB-TEM analysis for semiconductor process characterization. In this paper we extend the EELS technique using FIB sample preparation to Energy Filtering TEM (EFTEM) observations. The EFTEM analysis allows high-resolution compositional mapping using spectroscopic imaging of core level ionization edges3. We show some applications of FIB-EFTEM to defect analysis and process development.2. Experimental details.The FIB system is a MICRION model 9500 EX using a gallium ion beam of 50 keV maximum energy with a 5 nm minimum spot diameter.
30
Fritz, Mathias, Christian Elieser Hoess, Finn-Merlin Deckert, and Andreas Bund. "Light-Induced Platinum Deposition on Silicon-Based Semiconductor Devices." ECS Meeting Abstracts MA2023-02, no. 20 (December 22, 2023): 1217. http://dx.doi.org/10.1149/ma2023-02201217mtgabs.
Анотація:
Metal-semiconductor compounds are used in large numbers in microelectronics and need to be constantly improved. Platinum-silicon semiconductor contacts are often used in sensors and detectors, especially infrared detectors and cameras. Recent developments enable applications in medical technology, such as implanted pressure sensors in the human body. Currently, platinum coatings on silicon-based semiconductor devices are mostly realized by sputtering techniques or platinum-containing printing pastes with subsequent heat treatment. This paper will discuss recent results from the authors' lab on light-induced platinum electrodeposition. Special focus will be given to the pre-treatment of the substrates for the subsequent platinum deposition under illumination. In a systematic approach, all influencing parameters were identified and the most influential ones (pre-treatment, current density, electrolyte type, additives, etc.) were incorporated into an experimental plan. The challenges include a homogeneous platinum coating with low contact resistance and good adhesion. Last but not least, the characterization of the layers (with SEM, EDX, laser scanning microscope, etc.) will be discussed.
31
Lamia, Zarral, Djahli Farid, and Ndagijimana Fabien. "Technique of Coaxial Frame in Reflection for the Characterization of Single and Multilayer Materials with Correction of Air Gap." International Journal of Antennas and Propagation 2014 (2014): 1–9. http://dx.doi.org/10.1155/2014/324727.
Анотація:
Techniques based on fixture probes in reflection are used in microwave reflectometry as a novel diagnostic tool for detection of skin cancers, for complex permittivity measurements on liquid samples and oil shale, and for complex dielectric permittivity of animals’ organs and tissues measurements in microwave band for the needs of modern veterinary medicine. In this work, we have developed a technique to characterize multilayer materials in a broadband frequency range. A coaxial probe in reflection has been specially developed for microelectronic substrate. Using SMA connector, loss tangent of 10−4and relative permittivity have been measured with an error of 0.145%. The extension of the coaxial probe in reflection technique to multilayer substrates such as Delrin and Teflon permitted to measure bilayer material provided the good knowledge of electrical parameters and dimensions of one layer. In the coaxial transmission line method, a factor that greatly influences the accuracy of the results is the air gaps between the material under test and the coaxial test fixture. In this paper, we have discussed the influence of the air gaps (using samples of 0.5 mm air gaps) and the measures that can be taken to minimize that influence when material is measured. The intrinsic values thus determined have been experimentally verified. We have described the structure of the test fixture, its calibration issues, and the experimental results. Finally, electromagnetism simulations showed that the best results can be obtained.
32
Baczyński, Szymon, Piotr Sobotka, Kasper Marchlewicz, Artur Dybko, and Katarzyna Rutkowska. "Low-cost, widespread and reproducible mold fabrication technique for PDMS-based microfluidic photonic systems." Photonics Letters of Poland 12, no. 1 (March 31, 2020): 22. http://dx.doi.org/10.4302/plp.v12i1.981.
Анотація:
In this letter the possibility of low-cost fabrication of molds for PDMS-based photonic microstructures is considered. For this purpose, three different commercially available techniques, namely UV-curing of the capillary film, 3D SLA printing and micromilling, have been analyzed. Obtained results have been compared in terms of prototyping time, quality, repeatability, and re-use of the mold for PDMS-based microstructures fabrication. Prospective use for photonic systems, especially optofluidic ones infiltrated with liquid crystalline materials, have been commented. Full Text: PDF References:K. Sangamesh, C.T. Laurencin, M. Deng, Natural and Synthetic Biomedical Polymers (Elsevier, Amsterdam 2004). [DirectLink]A. Mata et. al, "Characterization of Polydimethylsiloxane (PDMS) Properties for Biomedical Micro/Nanosystems", Biomed. Microdev. 7(4), 281 (2005). [CrossRef]I. Rodríguez-Ruiz et al., "Photonic Lab-on-a-Chip: Integration of Optical Spectroscopy in Microfluidic Systems", Anal. Chem. 88(13), 6630 (2016). [CrossRef]SYLGARD™ 184 Silicone Elastomer, Technical Data Sheet [DirectLink]N.E. Stankova et al., "Optical properties of polydimethylsiloxane (PDMS) during nanosecond laser processing", Appl. Surface Science 374, 96 (2016) [CrossRef]J.C. McDonald et al., "Fabrication of microfluidic systems in poly(dimethylsiloxane)", Electrophoresis 21(1), 27 (2000). [CrossRef]T. Fujii, "PDMS-based microfluidic devices for biomedical applications", Microelectronic Eng. 61, 907 (2002). [CrossRef]F. Schneider et al., "Process and material properties of polydimethylsiloxane (PDMS) for Optical MEMS", Sensors Actuat. A: Physical 151(2), 95 (2009). [CrossRef]T.K. Shih et al., "Fabrication of PDMS (polydimethylsiloxane) microlens and diffuser using replica molding", Microelectronic Eng. 83(11-12), 2499 (2006). [CrossRef]K. Rutkowska et al. "Electrical tuning of the LC:PDMS channels", PLP, 9, 48-50 (2017). [CrossRef]D. Kalinowska et al., "Studies on effectiveness of PTT on 3D tumor model under microfluidic conditions using aptamer-modified nanoshells", Biosensors Bioelectr. 126, 214 (2019).[CrossRef]N. Bhattacharjee et al., "The upcoming 3D-printing revolution in microfluidics", Lab on a Chip 16(10), 1720 (2016). [CrossRef]I.R.G. Ogilvie et al., "Reduction of surface roughness for optical quality microfluidic devices in PMMA and COC", J. Micromech. Microeng. 20(6), 065016 (2010). [CrossRef]D. Gomez et al., "Femtosecond laser ablation for microfluidics", Opt. Eng. 44(5), 051105 (2005). [CrossRef]Y. Hwang, R.N. Candler, "Non-planar PDMS microfluidic channels and actuators: a review", Lab on a Chip 17(23), 3948 (2017). [CrossRef]
33
Warczak, Magdalena, Marianna Gniadek, Kamil Hermanowski, and Magdalena Osial. "Well-defined polyindole–Au NPs nanobrush as a platform for electrochemical oxidation of ethanol." Pure and Applied Chemistry 93, no. 4 (April 1, 2021): 497–507. http://dx.doi.org/10.1515/pac-2020-1101.
Анотація:
Abstract Over the recent decades, conducting polymers have received great interest in many fields including microelectronics, energy conversion devices, and biosensing due to their unique properties like electrical conductivity, stability, and simple synthesis. Modification of conducting polymers with noble metals e.g. gold enhances their properties and opens new opportunities to also apply them in other fields like electrocatalysis. Here, we focus on the synthesis of hybrid material based on polyindole (PIN) nanobrush modified with gold nanoparticles and its application towards electrooxidation of ethanol. The paper presents systematic studies from synthesis to electrochemical sensing applications. For the characterization of PIN–Au composites, scanning electron microscopy and X-ray diffraction analyses were used. The electrocatalytic performance of the proposed hybrid material towards alcohol oxidation was studied in alkaline media by cyclic voltammetry, chronoamperometry, and electrochemical impedance spectroscopy techniques. The results show that PIN–Au hybrid can be employed as an effective and sensitive platform for the detection of alcohols, which makes it a promising material in electrocatalysis or sensors. Moreover, the proposed composite exhibits electrocatalytic activity towards ethanol oxidation, which combined with its good long-term stability opens the opportunity for its application in fuel cells.
34
Basit, M., M. Aslam, M. Ahmad, and Z. A. Raza. "Structural, thermal and optoelectrical study of PVA/iron oxide nanocomposite films." Materialwissenschaft und Werkstofftechnik 55, no. 4 (April 2024): 455–65. http://dx.doi.org/10.1002/mawe.202300075.
Анотація:
AbstractThe work reported here deals with fabricating iron oxide nanoparticles incorporated polyvinyl alcohol nanocomposite films via the solution‐casting green route, characterized using various characterization techniques. X‐ray diffraction analysis shows interaction of nanoparticles with the polyvinyl alcohol matrix, scanning electron microscopy shows surface morphology of crack‐free films, energy dispersive spectroscopy indicates elemental purity, tensiometer analysis shows changing behavior of hydrophilic to hydrophobic, thermogravimetric analysis shows improved thermal stability, ultraviolet‐visible spectroscopy shows tunable optical properties, and frequency response analysis shows improved electrical properties. A small incorporation (1 wt. %) of iron oxide nanoparticles has induced significant alternations in structural, wetting, thermal, optical, and electrical properties of the polyvinyl alcohol‐based nanocomposite films. Results showed notable changes in the structural phases, water contact angle (39.5° to 97.7°), optical absorption edge (5.12 eV to 4.84 eV), indirect band gap (4.99 eV to 4.68 eV), direct bandgap (5.41 eV to 5.21 eV), and band tail (0.57 eV to 0.89 eV) from native polyvinyl alcohol to polyvinyl alcohol/iron oxide nanocomposite films. Enhancements were observed in refractive indices, optical conductivity, optical dielectric loss, thermal stability, dielectric constant, and dielectric loss on incorporating iron oxide nanoparticles into the polyvinyl alcohol matrix. The fabricated nanocomposite films might be a potential material for optoelectronic and microelectronics applications.
35
Stefani, G. G., N. S. Goel, and D. B. Jenks. "An Efficient Numerical Technique for Thermal Characterization of Printed Wiring Boards." Journal of Electronic Packaging 115, no. 4 (December 1, 1993): 366–72. http://dx.doi.org/10.1115/1.2909345.
Анотація:
Thermal modeling of Surface Mount Technology (SMT) microelectronics packages is difficult due to the complexity of the printed wiring board (PWB) plates through hole (PTH) structure. A simple, yet powerful finite difference based approach, called EPIC (Equivalent Parameter for Interfacial Cells), for modelling complex 2-D and 3-D geometries with multiple materials is used to model the PTH structure. A technique for computing an effective thermal conductivity for the PWB is presented. The results compare favorably with those from a commercially available finite element package but require far less computer time.
36
Das, Rabindra, Steven Rosser, and Frank Egitto. "Advanced Microelectronics Packaging Solutions for Miniaturized Medical Devices." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2013, DPC (January 1, 2013): 001963–76. http://dx.doi.org/10.4071/2013dpc-tha24.
Анотація:
The wide range of applications for medical electronics drives unique requirements that can differ significantly from commercial & military electronics. To accomplish this, new packaging structures need to be able to integrate more dies with greater function, higher I/O counts, smaller die pad pitches, and high reliability, while being pushed into smaller and smaller footprints. As a result, the microelectronics industry is moving toward alternative, innovative approaches as solutions for squeezing more function into smaller packages. In the present report, key enablers for achieving reduction in size, weight, and power (SWaP) in electronic packaging for a variety of medical applications are discussed. Advanced microelectronics packaging solutions with embedded passives are enabling SWaP reductions. Implementation of these solutions has realized up to 27X reduction in physical size for existing PWB assemblies, with significant reductions in weight. Shorter interconnects can also reduce or eliminate the need for termination resistors for some net topologies. Successful miniaturized products integrate the following design techniques and technologies: component footprint reduction, thin high density interconnects substrate technologies, I/O miniaturization and IC assembly capabilities. This paper presents fabrication and electrical characterization of embedded actives and passives on organic multilayered substrates. We have designed and fabricated several printed wiring board (PWB) and flip-chip package test vehicles focusing on embedded chips, resistors, and capacitors. Embedded passive technology further enhances miniaturization by enabling components to be moved from the surface of the substrate to its internal layers. The use of thin film resistor material allows creating individual miniaturized buried resistors. These resistors provide additional length and width reduction with negligible increases to the overall substrate and module (SiP) height. Resistor values can vary from 5 ohm to 50 Kohm with tolerances from 5 to 20% and areas as small as 0.2 mm2. The embedded resistors can be laser trimmed to a tolerance of <5% for applications that require tighter tolerance. The electrical properties of embedded capacitors fabricated from polymer-ceramic nanocomposites showed a stable capacitance and low loss over a wide frequency and temperature range. A few test vehicles were assembled to do system level analysis. Manufacturing methods and materials for producing advanced organic substrates and flex along with ultra fine pitch assemblies are discussed. A case study detailing the fabrication of a flexible substrate for use in an intravascular ultrasound (IVUS) catheter demonstrates how the challenges of miniaturization are met. These challenges include use of ultra-thin polymer films, extreme fine-feature circuitization, and assembly processes to accommodate die having reduced die pad pitch. In addition, new technologies for embedding a variety of active chips are being developed. A variety of active chips, including a chip having dimensions of one millimeter square, have been embedded and electrically connected to develop high performance packages.
37
Cruz-Quesada, Guillermo, Maialen Espinal-Viguri, María Victoria López-Ramón, and Julián J. Garrido. "Novel Silica Hybrid Xerogels Prepared by Co-Condensation of TEOS and ClPhTEOS: A Chemical and Morphological Study." Gels 8, no. 10 (October 20, 2022): 677. http://dx.doi.org/10.3390/gels8100677.
Анотація:
The search for new materials with improved properties for advanced applications is, nowadays, one of the most relevant and booming fields for scientists due to the environmental and technological needs of our society. Within this demand, hybrid siliceous materials, made out of organic and inorganic species (ORMOSILs), have emerged as an alternative with endless chemical and textural possibilities by incorporating in their structure the properties of inorganic compounds (i.e., mechanical, thermal, and structural stability) in synergy with those of organic compounds (functionality and flexibility), and thus, bestowing the material with unique properties, which allow access to multiple applications. In this work, synthesis using the sol-gel method of a series of new hybrid materials prepared by the co-condensation of tetraethoxysilane (TEOS) and 4-chlorophenyltriethoxysilane (ClPhTEOS) in different molar ratios is described. The aim of the study is not only the preparation of new materials but also their characterization by means of different techniques (FT-IR, 29Si NMR, X-ray Diffraction, and N2/CO2 adsorption, among others) to obtain information on their chemical behavior and porous structure. Understanding how the chemical and textural properties of these materials are modulated with respect to the molar percentage of organic precursor will help to envisage their possible applications: From the most conventional such as catalysis, adsorption, or separation, to the most advanced in nanotechnology such as microelectronics, photoluminescence, non-linear optics, or sensorics.
38
Alves, L. C., V. Corregidor, T. Pinheiro, and L. Ferreira. "Ion Beam Microscopy: a Tool for Materials." Microscopy and Microanalysis 19, S4 (August 2013): 95–96. http://dx.doi.org/10.1017/s1431927613001098.
Анотація:
Ion Beam Analytical techniques (IBA) using MeV charged particles are powerful techniques for the study of different type of samples in several science fields such as Material Science, microelectronics or biology/biomedicine due to its fine sensitivity, versatility and “non-destructive” characteristics. The possibility of beam focusing and beam scanning adds spatial resolution down to the dm level and imaging capabilities then allowing the IBA techniques to become microscopy techniques.In the Nuclear Microprobe installed at IST/ITN several IBA techniques can be routinely used for materials characterization, the most common ones being PIXE (Particle Induced X-ray Emission), RBS (Rutherford Backscattering Spectrometry) and STIM (Scanning Transmission Ion Microscopy). Whether through their independent or combined use the most important thing of these techniques is the complementary information that they can grant. As any other X-ray spectroscopic technique pPIXE can also provide elemental identification (for Z>12) but further present their spatial distribution in the sample as well as, for thin biological samples (<20 <m), calculate their areal mass density. RBS on the other hand is able to probe sample in depth then allowing obtaining, for instance, elemental depth profile and at the same time sample matrix areal mass density. The combined use of PIXE and RBS then allows determining elemental concentration for thin biological samples. For the mentioned thin biological samples the ion beam energy loss when crossing them (base of the STIM technique), contains information on their density or thickness allowing unique information on its structure and morphology.Advantages and draw backs can always be taken into account when comparing with similar or competitive techniques. This is the case of PIXE and SEM-EDS which is quite unfavorable for PIXE in the case of image spatial resolution, but quite favorable if elemental sensitivity is considered. Due to the much lower X-ray spectrum background, detection limits for PIXE reach the tg/g level.As an example of application, some of the results obtained for PE-g-HEMA films are here shown. To allow their utilization as biomaterials for biomedical applications (e.g. drug delivery) apart from the needed mechanical properties and surface characteristics, biocompatibility of these materials is of fundamental importance. Regarding biocompatibility one important parameter to be assessed is its cytotoxicity that strongly depends on the contamination level at the surface. As shown in Fig. 1, MeV ion beam microscopy not only can provide major and trace element spatial distribution (combining PIXE and RBS data) but also valuable information on its near-surface structure (STIM). Furthermore, quantitative elemental analysis can be performed through the analysis of the PIXE spectra with sensitivity down to the rg/g level as also revealed in Figure 1.V. Corregidor acknowledges the funding support from the FCT-Ciência program.
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Bennett, N. S., and N. E. B. Cowern. "Doping characterization for germanium-based microelectronics and photovoltaics using the differential Hall technique." Applied Physics Letters 100, no. 17 (April 23, 2012): 172106. http://dx.doi.org/10.1063/1.4705293.
40
Maraj, Mudassar, Ghulam Nabi, Khurram Usman, Engui Wang, Wenwang Wei, Yukun Wang, and Wenhong Sun. "High Quality Growth of Cobalt Doped GaN Nanowires with Enhanced Ferromagnetic and Optical Response." Materials 13, no. 16 (August 11, 2020): 3537. http://dx.doi.org/10.3390/ma13163537.
Анотація:
Group III–V semiconductors with direct band gaps have become crucial for optoelectronic and microelectronic applications. Exploring these materials for spintronic applications is an important direction for many research groups. In this study, pure and cobalt doped GaN nanowires were grown on the Si substrate by the chemical vapor deposition (CVD) method. Sophisticated characterization techniques such as X-ray diffraction (XRD), Scanning Electron Microscope (SEM), Energy Dispersive X-Ray Spectroscopy (EDS), Transmission Electron Microscopy (TEM), High-Resolution Transmission Electron Microscopy (HRTEM) and photoluminescence (PL) were used to characterize the structure, morphology, composition and optical properties of the nanowires. The doped nanowires have diameters ranging from 60–200 nm and lengths were found to be in microns. By optimizing the synthesis process, pure, smooth, single crystalline and highly dense nanowires have been grown on the Si substrate which possess better magnetic and optical properties. No any secondary phases were observed even with 8% cobalt doping. The magnetic properties of cobalt doped GaN showed a ferromagnetic response at room temperature. The value of saturation magnetization is found to be increased with increasing doping concentration and magnetic saturation was found to be 792.4 µemu for 8% cobalt doping. It was also depicted that the Co atoms are substituted at Ga sites in the GaN lattice. Furthermore N vacancies are also observed in the Co-doped GaN nanowires which was confirmed by the PL graph exhibiting nitrogen vacancy defects and strain related peaks at 455 nm (blue emission). PL and magnetic properties show their potential applications in spintronics.
41
Pulici, Andrea, Stefano Kuschlan, Gabriele Seguini, Fabiana Taglietti, Marco Fanciulli, Riccardo Chiarcos, Michele Laus, and Michele Perego. "Electrical Characterization of Ultra-Thin Silicon-on-Insulator Films Doped By Means of Phosphorus End-Terminated Polymers." ECS Meeting Abstracts MA2023-02, no. 30 (December 22, 2023): 1552. http://dx.doi.org/10.1149/ma2023-02301552mtgabs.
Анотація:
Starting at the 3 nm node, the microelectronics industry is anticipated to transition toward new stacked device architectures, such as gate-all-around field-effect transistors (GAAFETs). In GAAFETs, the gate completely surrounds a silicon nanosheet that serves as a channel, improving the control of the current and performances. The introduction of ultra-scaled stacked 3D devices posed new technological and fundamental problems. In particular, doping techniques commonly used in the mass production of advanced transistors, such as ion implantation or diffusion, present some limitations when applied to these 3D structures. Perego et al.[1] suggested the use of dopant end-terminated polymers as a mild and simple alternative approach to achieve semiconductor doping. Considering the current trend in ultra-scaled microelectronic devices, exploitation of this doping technology requires the demonstration of the possibility to dope thin silicon membranes, achieving a uniform doping concentration throughout the entire film and optimized electrical properties. In this work, ex-situ doping of silicon-on-insulator (SOI) substrates, with device layer thickness ranging from 6 to 70 nm, is performed by using poly(methylmetachrylate) polymers end-terminated with a P containing moiety (PMMA-P), following a procedure described in our previous works.[1,2] Accordingly, a phosphorus δ-layer is created at the interface between a SiO2 capping layer and the underlying Si device layer. Drive-in of the P atoms is performed by annealing the samples in a RTP system at temperatures ranging from 900 to 1200 °C in N2 atmosphere. Annealing time is selected to inject a constant P dose of ∼ 1 x 1013 cm-2 into the SOI substrate, achieving a uniform dopant concentration, as verified by ToF-SIMS measurements. Sample resistivity (ρ), carrier concentration (ne ) and mobility (μ) are determined through sheet resistance and Hall measurements in van der Pauw configuration. Figure 1 shows the results of the electrical and compositional measurements obtained on SOI samples with 30 nm thick device layer as a function of the drive-in temperature. An average activation rate (ηa) above 95% is observed at room temperature in the samples annealed at 1000 °C, indicating full activation of the injected dopants. In the temperature range considered, the mobility is almost constant and is perfectly compatible with values reported in the literature for bulk Si,[3]as shown in the inset. Moreover, the low temperature (5-300 K) electrical characterization indicates that the evolution of ρ, ne and μ values with temperature is consistent with those reported for a P doped bulk Si.[3] Figure 2 shows the results of the electrical and compositional measurements obtained on SOI samples with device layer thickness ranging from 6 to 70 nm upon drive-in of the P dopants at 1000 °C for 100 s. When decreasing the thickness of the device layer, P concentration progressively increases above 1019 atoms/cm3, suggesting that the capping SiO2 film and the buried oxide act as diffusion barrier for P atoms injected into the device layer. ηa well above 80% are achieved for the SOI substrates with device layer thickness greater than 10 nm. However, ηa drops below 10% when further decreasing the thickness of the device layer. A similar reduction of the activation rates was observed in silicon nanowires by Bj ö rk et al.[4] Interestingly, in extremely-thin SOI samples, donor deactivation is correlated to an increase in electron mobility with computed values even greater than those reported for a bulk Si[3], as shown in the inset of Figure 2. Figure 3 shows the relative electron mobility variation as a function of the ratio between the thickness and the average distance between donors for SOI samples annealed at 900 and 1000 °C. The computed values are perfectly compatible with those reported by Kadotani et al.[5] Their model suggests that the enhanced electron mobility observed in heavily doped extremely-thin SOI is caused by the transition from 3D to almost 2D conduction, which results in the reduction of the Coulomb scattering due to the lower number of neighbor donor ions. In conclusion, an experimental study of the doping of ultra-thin SOI by means of phosphorus end-terminated polymers, demonstrates effective doping of silicon with extremely high activation rates of the dopants. Significant deactivation of P atoms and extremely high electron mobility are observed when decreasing the thickness of the device layer below 20 nm where bulk conducting properties transitioned to confinement related phenomena. [1] M.Perego et al., ACS Nano 12 (2018) 178-186. [2] M.Perego et al., J.Mater.Chem.C 8 (2020) 10229-10237. [3] S.M.Sze, K.K.Ng, Physics of Semiconductor Devices (2006) 5-75. [4] M.T.Björk et al., Nature Nanotechnology 4 (2009) 103-107. [5] N.Kadotani et al., Journal of Applied Physics 110 (2011) 034502. Figure 1
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Dittman, Timothy, David Ebner, and Alex Bailey. "Design of Experiments Approach to Evaluating the Reliability of System-in-Package Assemblies." International Symposium on Microelectronics 2017, no. 1 (October 1, 2017): 000619–23. http://dx.doi.org/10.4071/isom-2017-tha52_063.
Анотація:
Abstract Reliability in microelectronic packaging has been, and will continue to be, a major concern that must be taken into account early in the design of a package. System-in-package (SiP) assemblies, as well as other high density packaging technologies, are being used in many system architectures in order to incorporate a high level of integration, reduce cost and fit on tighter next higher assembly (NHA) grid spacing. While these technologies are being adopted into system architectures, there is limited test data on the reliability of these packages in military applications. A better understanding of the impacts of design variables in a SiP assembly allows the design community to determine the most appropriate packaging solution for use in a given application. The term “system-in-package” covers a wide range of microelectronic packaging technologies. Microelectronic packaging technology is trending towards taking the SiP concept and incorporating a very high level of integration within as small of a footprint as possible. In many cases, a fan out design technique is used in order to utilize die with high density bump patterns and then use an interposer technology to increase the bump pitch to match pitches achievable on NHA board technologies. While increasing the packaging density appears beneficial in theory, its reliability becomes a risk as the complexity of the assembly increases and more interfaces are added. Mechanical and structural considerations must be taken into account when designing this type of assembly in order to limit the stresses observed in the assembly, especially when exposed to environmental conditions. This study will focus on traditional two dimensional (2D) integrated circuit (IC) designs. For the purposes of this study, a 2D IC package will be considered as multiple die attached to a SiP substrate via flip-chip bumps. These SiP assemblies will in turn be attached to a test circuit board via solder bumps, which are at a larger pitch relative to the flip-chip bump patterns. A daisy-chain circuit design was incorporated into the test board and die in order to evaluate the reliability of the assembly interconnects at various points throughout the assembly. Design variables such as underfill material, SiP substrate material and flip-chip bump density were incorporated into a design of experiments in order to evaluate their impact on the reliability of a SiP assembly. The materials selected for use in this testing allow for the evaluation of the impacts of coefficient of thermal expansion (CTE), modulus and other material properties on the reliability of a SiP assembly. Reliability of the assemblies was tested via temperature cycling and biased humidity testing. Successful reliability of each test was dictated by the continuity of the daisy chain circuits throughout testing, as well as a visual examination of the interconnects after test. Samples of each assembly design configuration were used in cross sectional analysis to further examine the effects of the reliability on the assembly. Material characterization techniques such as scanning electron microscopy (SEM) and focus ion beam scanning electron microscopy (FIB-SEM) were used, as necessary, to investigate failure modes. This paper will review a design of experiments study of SiP assemblies and present the results of reliability testing on various SiP assembly designs. Further study is suggested for the use of these results in developing and refining finite element models capable of accurately predicting failure modes in SiP assemblies.
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Tuttle, Bruce A. "Electronic Ceramic Thin Films: Trends in Research and Development." MRS Bulletin 12, no. 7 (November 1987): 40–46. http://dx.doi.org/10.1557/s0883769400066938.
Анотація:
Electronic ceramic materials research is one of the fastest growing, most highly publicized areas of materials science. Subjects receiving considerable attention include high temperature superconductors, multilayer ceramic composites for high density microelectronics packaging, and ferroelectric electro-optic thin films. A complete review of all aspects of electronic ceramics research is beyond the scope of this article, which will focus on two general topics whose development is representative of recent contributions to the field. These two areas are synthesis and characterization of electronic ceramic films,1 and controlled use of low level dopants (1,000 ppm or less) in bulk polycrystalline ceramics, thin films, and single crystals to achieve desired properties. Perspective of the progress in ceramic film development is given by a review of single-crystal synthesis and properties.Several examples of the impact that low level dopants and thin film synthesis have on electronic ceramics development are presented. Dopant concentrations of 1,000 ppm or less can have a dramatic effect on microstructural, optical, and electrical properties. For example, a decrease in aluminum content of 150 ppm resulted in an increase in grain size from 1 to 25 microns in otherwise identical ZnO varistors. Background aluminum concentrations for these varistors were less than 10 ppm. In another example, the photorefractive effect, the change in refractive index with optical light intensity, has been shown to be altered by orders of magnitude with ppm doping levels in ferroelectric electro-optic materials.Several electronic ceramic devices have recently been developed due to improvements in ceramic film processing. Examples of these devices include: 1. multilayer PZT transformers, which allow fabrication of complex monolithic passive multicom-ponent networks, 2. liquid cooled multilayer ceramic substrates, with 400×800 micron liquid transfer capillaries integrated into the multilayer structure via ceramic processing techniques for high density VLSI packaging, and 3. ferroelectric electrooptic thin films that are compatible with silicon or III-V technology. For all the above applications, synthesis of electronic ceramic materials into high purity films is essential.
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Leofanti, G., G. Tozzola, M. Padovan, G. Petrini, S. Bordiga, and A. Zecchina. "Catalyst characterization: characterization techniques." Catalysis Today 34, no. 3-4 (February 1997): 307–27. http://dx.doi.org/10.1016/s0920-5861(96)00056-9.
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Eckert, Hellmut, and Manfred Rühle. "Characterization techniques." Current Opinion in Solid State and Materials Science 5, no. 2-3 (April 2001): 193–94. http://dx.doi.org/10.1016/s1359-0286(01)00018-3.
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Fischer, John E., and Hellmut Eckert. "Characterization techniques." Current Opinion in Solid State and Materials Science 1, no. 4 (August 1996): 463–64. http://dx.doi.org/10.1016/s1359-0286(96)80059-3.
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Eckert, Hellmut, and Manfred Rühle. "Characterization techniques." Current Opinion in Solid State and Materials Science 2, no. 4 (August 1997): 463–64. http://dx.doi.org/10.1016/s1359-0286(97)80090-3.
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Stern, Edward A., and Richard W. Siegel. "Characterization techniques." Current Opinion in Solid State and Materials Science 4, no. 4 (August 1999): 321–23. http://dx.doi.org/10.1016/s1359-0286(99)00042-x.
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Fournel, Frank, Loic Sanchez, Brigitte Montmayeul, Gaëlle Mauguen, Laurent Bally, Vincent Larrey, Christophe Morales, et al. "(Invited) Optoelectronic and 3D Applications with Die to Wafer Direct Bonding: From Mechanisms to Applications." ECS Meeting Abstracts MA2022-02, no. 17 (October 9, 2022): 853. http://dx.doi.org/10.1149/ma2022-0217853mtgabs.
Анотація:
Abstract—Wafer direct bonding is now a widely spread technique in microelectronics. However in many interesting applications, wafer bonding is not adapted due to size, material or technological node differences. Die to wafer bonding could then lead to innovative devices. After explaining some specific fundamental mechanisms, III/V die to wafer bonding and copper hybrid bonding will be presented for photonic and 3D applications. Introduction SOI or backside image sensors’ fabrication in mass production, for instance, calls upon direct wafer bonding that has become a standard technology available in many industrial microelectronic factories. Direct bonding of 200 mm or 300 mm silicon wafers are nowadays well mastered. For many innovative applications, it could be interesting to introduce new materials like InP, AsGa, GaN on a silicon platform. Heterostructure bonding then needs to be developed. This could be done with wafer-to-wafer bonding. However, wafers made of these new materials usually have diameters much smaller than that of silicon wafers, especially if CMOS are required on the silicon wafers. Indeed, advanced CMOS devices are nowadays only available on 200/300 mm silicon wafers. Even if the bonding of a small wafer on a bigger one is easily feasible, the silicon surface lost will be detrimental to the cost of the device. Moreover, usually, a very small surface of the new material is needed on the silicon wafer. With a wafer-to-wafer bonding (W2W), the new material surface loss will be quite important. Die-to-wafer (D2W) bonding is thus the solution to both issues in order to put only a small amount of new material where it is needed and populate all the active area on silicon wafers. D2W is also interesting in hybrid bonding with silicon wafers. Indeed, D2W enlarges design rules to mix different technologies (material, dies size) on the same bottom wafer while enabling high density of copper interconnects.. Hybrid D2W is then foreseen as being the next step for hybrid bonding in order to widen its application field. Results Starting with the well know fundamental mechanisms of silicon dioxide bonding [1] as well as copper and hybrid surface bonding [2], D2W bonding behavior will be discussed. Some specific features indeed have to be taken into account for die bonding. For instance, all the edge effects, during and after the bonding or the annealing, have a great impact on the bonding energy as well as on the interface defectivity. Moreover, specific bonding techniques using for instance liquid water films can be used only in D2W bonding. If these specific features are under control, very innovative structures can be obtained. It is possible for instance to bond small 3mm*3mm InP dies onto 200mm silicon photonic wafers as shown in Fig.1a [3]. Moreover, hybrid bonding interfaces can also be obtained between 6mm*4mm dies and a 300mm wafer as shown in Fig.1b. Obviously, alignment in mandatory during hybrid bonding. This can be obtained thanks to a die to wafer bonder. However, innovative technologies such as capillary assisted self-assembly can also be really interesting [4 -7]. The electrical characterization of the D2W hybrid bonding connection will be also discussed, showing roughly the same good results as for W2W hybrid bonding. Acknowledgment This work was funded thanks to the French National program “Programme d’Investissement d’Avenir IRT Nanoelec” ANR-10-AIRT-05. References 1 F. Fournel, et al., ECS J. Solid State Sci. Technol. 4, P124 (2015). 2 L.D. Cioccio, et al., J. Electrochem. Soc. 158, P81 (2011). 3 B. Szelag et al., Hybrid III-V/Silicon technology for laser integration on a 200 mm fully CMOS-compatible silicon photonics platform, IEEE J. Sel. Top. Quantum Electron., In Press (2019). 4 A. Jouve, et al., ECTC (2019). 5 T. Fukushima, et al., in 2011 IEEE 61st Electron. Compon. Technol. Conf. ECTC (2011), pp. 2050–2055. 6 E. Bourjot, et al., ECTC(2021) Figure 1
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Rogers, John A., Martin Fuchs, Matthew J. Banet, John B. Hanselman, Randy Logan, and Keith A. Nelson. "Optical system for rapid materials characterization with the transient grating technique: Application to nondestructive evaluation of thin films used in microelectronics." Applied Physics Letters 71, no. 2 (July 14, 1997): 225–27. http://dx.doi.org/10.1063/1.119506.