Статті в журналах: "CdTe, thin film, solar cell"

1

Ibrahim, M., P. Chelvanathan, M. H. Miraz, H. I. Alkhammash, A. K. M. Hasan, Md Akhtaruzzaman, K. Althubeiti, Md Shahiduzzaman, K. Sobayel, and N. Kamal. "Comprehensive study on CdSe thin film as potential window layer on CdTe solar cell by SCAPD-1D." Chalcogenide Letters 19, no. 1 (January 2022): 33–43. http://dx.doi.org/10.15251/cl.2022.191.33.

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Photovoltaics significantly contributes towards the emerging renewable energy drive. Amongst the available thin film solar cell technologies, presently CdTe is leading at commercial state. CdS is being widely used as window layer in CdTe solar cell but challenged with toxicity. Therefore, this project explores the feasibility of CdSe as alternative window layer in CdTe solar cell. The CdSe is optimized to determine the best complete CdTe based solar cell. The study also compares the device performance of proposed CdSe/CdTeSe/CdTe solar cell with other reported CdSe/CdTe and CdS/CdSe solar cells. While degerming the optimized thickness of CdTe solar cell with respect to different prospective window layer materials, the simulation results reveal that CdTe thickness can significantly reduce, at least by 500 nm, with only 1% reduction in PCE by replacing conventional CdS window layer with CdSe layer. Furthermore, while determining the appropriate Se composition on CdSexTe1-x as this layer forms between CdTe and CdSe layer during the fabrication, it has been found that 18% efficiency can be obtained in CdTe solar cell if the stoichiometry of CdSexTe1-x can be maintained as CdSe0.3Te0.7 during the device fabrication.

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Lingg, Buecheler, and Tiwari. "Review of CdTe1−xSex Thin Films in Solar Cell Applications." Coatings 9, no. 8 (August 15, 2019): 520. http://dx.doi.org/10.3390/coatings9080520.

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Recent improvements in CdTe thin film solar cells have been achieved by using CdTe1−xSex as a part of the absorber layer. This review summarizes the published literature concerning the material properties of CdTe1−xSex and its application in current thin film CdTe photovoltaics. One of the important properties of CdTe1−xSex is its band gap bowing, which facilitates a lowering of the CdTe band gap towards the optimum band gap for highest theoretical efficiency. In practice, a CdTe1−xSex gradient is introduced to the front of CdTe, which induces a band gap gradient and allows for the fabrication of solar cells with enhanced short-circuit current while maintaining a high open-circuit voltage. In some device structures, the addition of CdTe1−xSex also allows for a reduction in CdS thickness or its complete elimination, reducing parasitic absorption of low wavelength photons.

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3

Suntola, T. "CdTe Thin-Film Solar Cells." MRS Bulletin 18, no. 10 (October 1993): 45–47. http://dx.doi.org/10.1557/s088376940003829x.

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Cadmium telluride is currently the most promising material for high efficiency, low-cost thin-film solar cells. Cadmium telluride is a compound semiconductor with an ideal 1.45 eV bandgap for direct light-to-electricity conversion. The light absorption coefficient of CdTe is high enough to make a one-micrometer-thick layer of material absorb over 99% of the visible light. Processing homogenous polycrystalline thin films seems to be less critical for CdTe than for many other compound semiconductors. The best small-area CdTe thin-film cells manufactured show more than 15% conversion efficiency. Large-area modules with aperture efficiencies in excess of 10% have also been demonstrated. The long-term stability of CdTe solar cell structures is not known in detail or in the necessary time span. Indication of good stability has been demonstrated. One of the concerns about CdTe solar cells is the presence of cadmium which is an environmentally hazardous material.

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Mazur, T. M., V. V. Prokopiv, M. P. Mazur, and U. M. Pysklynets. "Solar cells based on CdTe thin films." Physics and Chemistry of Solid State 22, no. 4 (December 30, 2021): 817–27. http://dx.doi.org/10.15330/pcss.22.4.817-827.

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An analysis of the use of semiconductor solar cells based on thin-film cadmium telluride (CdTe) in power engineering is carried out. It is shown that the advantages of thin-film technology and CdTe itself as a direct-gap semiconductor open up the prospect of large-scale production of competitive CdTe solar modules. The physical and technical problems of increasing the efficiency of CdS/CdTe heterostructure solar cells, which are significantly inferior to the theoretically possible value in mass production, are discussed. The state of CdTe thin-film solar cells, which make CdTe a suitable material for ground-based photoelectric conversion of solar energy, the historical development of the CdTe compound, the application of CdTe thin films, the main methods and strategies of device production, device analysis and fundamental problems related to the future development of thin-film modules based on cadmium telluride.

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5

Chen, Yanru, Xianglin Mei, Xiaolin Liu, Bin Wu, Junfeng Yang, Junyu Yang, Wei Xu, Lintao Hou, Donghuan Qin, and Dan Wang. "Solution-Processed CdTe Thin-Film Solar Cells Using ZnSe Nanocrystal as a Buffer Layer." Applied Sciences 8, no. 7 (July 21, 2018): 1195. http://dx.doi.org/10.3390/app8071195.

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The CdTe nanocrystal (NC) is an outstanding, low-cost photovoltaic material for highly efficient solution-processed thin-film solar cells. Currently, most CdTe NC thin-film solar cells are based on CdSe, ZnO, or CdS buffer layers. In this study, a wide bandgap and Cd-free ZnSe NC is introduced for the first time as the buffer layer for all solution-processed CdTe/ZnSe NC hetero-junction thin-film solar cells with a configuration of ITO/ZnO/ZnSe/CdTe/MoOx/Au. The dependence of the thickness of the ZnSe NC film, the annealing temperature and the chemical treatment on the performance of NC solar cells are investigated and discussed in detail. We further develop a ligand-exchanging strategy that involves 1,2-ethanedithiol (EDT) during the fabrication of ZnSe NC film. An improved power conversion efficiency (PCE) of 3.58% is obtained, which is increased by 16.6% when compared to a device without the EDT treatment. We believe that using ZnSe NC as the buffer layer holds the potential for developing high-efficiency, low cost, and stable CdTe NC-based solar cells.

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Chen, Bingchang, Junhong Liu, Zexin Cai, Ao Xu, Xiaolin Liu, Zhitao Rong, Donghuan Qin, Wei Xu, Lintao Hou, and Quanbin Liang. "The Effects of ZnTe:Cu Back Contact on the Performance of CdTe Nanocrystal Solar Cells with Inverted Structure." Nanomaterials 9, no. 4 (April 17, 2019): 626. http://dx.doi.org/10.3390/nano9040626.

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CdTe nanocrystal (NC) solar cells have received much attention in recent years due to their low cost and environmentally friendly fabrication process. Nowadays, the back contact is still the key issue for further improving device performance. It is well known that, in the case of CdTe thin-film solar cells prepared with the close-spaced sublimation (CSS) method, Cu-doped CdTe can drastically decrease the series resistance of CdTe solar cells and result in high device performance. However, there are still few reports on solution-processed CdTe NC solar cells with Cu-doped back contact. In this work, ZnTe:Cu or Cu:Au back contact layer (buffer layer) was deposited on the CdTe NC thin film by thermal evaporation and devices with inverted structure of ITO/ZnO/CdSe/CdTe/ZnTe:Cu (or Cu)/Au were fabricated and investigated. It was found that, comparing to an Au or Cu:Au device, the incorporation of ZnTe:Cu as a back contact layer can improve the open circuit voltage (Voc) and fill factor (FF) due to an optimized band alignment, which results in enhanced power conversion efficiency (PCE). By carefully optimizing the treatment of the ZnTe:Cu film (altering the film thickness and annealing temperature), an excellent PCE of 6.38% was obtained, which showed a 21.06% improvement compared with a device without ZnTe:Cu layer (with a device structure of ITO/ZnO/CdSe/CdTe/Au).

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7

Thivakarasarma, Thuraisamykurukkal, Adikari Arachchige Isuru Lakmal, Buddhika Senarath Dassanayake, Dhayalan Velauthapillai, and Punniamoorthy Ravirajan. "Thermally Evaporated Copper Iodide Hole-Transporter for Stable CdS/CdTe Thin-Film Solar Cells." Nanomaterials 12, no. 14 (July 21, 2022): 2507. http://dx.doi.org/10.3390/nano12142507.

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This study focuses on fabricating efficient CdS/CdTe thin-film solar cells with thermally evaporated cuprous iodide (CuI) as hole-transporting material (HTM) by replacing Cu back contact in conventional CdS/CdTe solar cells to avoid Cu diffusion. In this study, a simple thermal evaporation method was used for the CuI deposition. The current-voltage characteristic of devices with CuI films of thickness 5 nm to 30 nm was examined under illuminations of 100 mW/cm2 (1 sun) with an Air Mass (AM) of 1.5 filter. A CdS/CdTe solar cell device with thermally evaporated CuI/Au showed power conversion efficiency (PCE) of 6.92% with JSC, VOC, and FF of 21.98 mA/cm2, 0.64 V, and 0.49 under optimized fabrication conditions. Moreover, stability studies show that fabricated CdS/CdTe thin-film solar cells with CuI hole-transporters have better stability than CdS/CdTe thin-film solar cells with Cu/Au back contacts. The significant increase in FF and, hence, PCE, and the stability of CdS/CdTe solar cells with CuI, reveals that Cu diffusion could be avoided by replacing Cu with CuI, which provides good band alignment with CdTe, as confirmed by XPS. Such an electronic band structure alignment allows smooth hole transport from CdTe to CuI, which acts as an electron reflector. Hence, CuI is a promising alternative stable hole-transporter for CdS/CdTe thin-film solar cells that increases the PCE and stability.

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8

Jones, K. M., F. S. Hasoon, A. B. Swartzlander, M. M. Al-Jassim, T. L. Chu, and S. S. Chu. "The morphology and microstructure of polycrystalline CdTe thin films for solar cell applications." Proceedings, annual meeting, Electron Microscopy Society of America 50, no. 2 (August 1992): 1384–85. http://dx.doi.org/10.1017/s0424820100131553.

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Polycrystalline thin films of II-VI semiconductors on foreign polycrystalline (or amorphous) substrates have many applications in optoelectronic devices. In contrast to the extensive studies of the heteroepitaxial growth of compound semiconductors on single-crystal substrates, the nucleation and growth of thin films of II-VI compounds on foreign substrates have received little attention, and the properties of these films are often controlled empirically to optimize device performance. A better understanding of the nucleation, growth, and microstructure will facilitate a better control of the structural and electrical properties of polycrystalline semiconductor films, thereby improving the device characteristics. Cadmium telluride (CdTe) has long been recognized as a promising thin-film photovoltaic material. Under NREL's sponsorship, the University of South Florida has recently developed a record high efficiency (14.6% under global AM1.5 conditions) thin-film CdS/CdTe heterojunction solar cell for potential low-cost photovoltaic applications. The solar cell has the structure:glass (substrate)/SnO2:F/CdS/CdTe/HgTe (contact)The CdS films were grown from an aqueous solution, while the CdTe films were deposited by the closespaced sublimation method.

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9

Chowdhury, RI, MS Islam, F. Sabeth, G. Mustafa, SFU Farhad, DK Saha, FA Chowdhury, S. Hussain, and ABMO Islam. "Characterization of Electrodeposited Cadmium Selenide Thin Films." Dhaka University Journal of Science 60, no. 1 (April 15, 2012): 137–40. http://dx.doi.org/10.3329/dujs.v60i1.10352.

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Cadmium selenide (CdSe) thin films have been deposited on glass/conducting glass substrates using low-cost electrodeposition method. X-ray diffraction (XRD) technique has been used to identify the phases present in the deposited films and observed that the deposited films are mainly consisting of CdSe phases. The photoelectrochemical (PEC) cell measurements indicate that the CdSe films are n-type in electrical conduction, and optical absorption measurements show that the bandgap for as-deposited film is estimated to be 2.1 eV. Upon heat treatment at 723 K for 30 min in air the band gap of CdSe film is decreased to 1.8 eV. The surface morphology of the deposited films has been characterized using scanning electron microscopy (SEM) and observed that very homogeneous and uniform CdSe film is grown onto FTO/glass substrate. The aim of this work is to use n-type CdSe window materials in CdTe based solar cell structures. The results will be presented in this paper in the light of observed data.DOI: http://dx.doi.org/10.3329/dujs.v60i1.10352 Dhaka Univ. J. Sci. 60(1): 137-140 2012 (January)

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10

Alamri, Saleh N., M. S. Benghanem, and A. A. Joraid. "Preparation of the Three Main Layers of CdS/CdTe Thin Film Solar Cells Using a Single Vacuum System." Advanced Materials Research 378-379 (October 2011): 601–5. http://dx.doi.org/10.4028/www.scientific.net/amr.378-379.601.

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This study investigates the preparation of the three main layers of a CdS/CdTe thin film solar cell using a single vacuum system. A Close Space Sublimation System was constructed to deposit CdS, CdTe and CdCl2 solar cell layers. Two hot plates were used to heat the source and the substrate. Three fused silica melting dishes were used as containers for the sources. The properties of the deposited CdS and CdTe films were determined via Atomic force microscopy, scanning electron microscopy, X-ray diffraction and optical transmission spectroscopy. An J-V characterization of the fabricated CdS/CdTe solar cells was performed under solar radiation. The short-circuit current density, Jsc, the open-circuit voltage, Voc, fill factor, FF and conversion efficiency, η, were measured and yielded values of 27 mA/cm2, 0.619 V, 58% and 9.8%, respectively.

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11

Cohen-Solal, C., M. Barbe, H. Afifi, and G. Neu. "Thin film CdTe solar cells." Journal of Crystal Growth 72, no. 1-2 (July 1985): 512–24. http://dx.doi.org/10.1016/0022-0248(85)90199-x.

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12

Haddout, Assiya, Abderrahim Raidou, and Mounir Fahoume. "Numerical modeling of CdTe solar cells thin film investigation by using PC1D model." World Journal of Engineering 15, no. 5 (October 1, 2018): 549–55. http://dx.doi.org/10.1108/wje-08-2017-0215.

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Purpose The purpose of this paper is to study the effect of individual layers of cadmium telluride (CdTe) solar cell to improve the efficiency of the photovoltaic cell. Design/methodology/approach To improve the performances of CdTe thin-film solar cells, the thickness of CdTe and cadmium sulfide (CdS) have been modified separately. High-efficiency ultra-thin CdTe solar cell with ZnTe layer as back surface field (BSF) was achieved. The CdTe solar cell is under AM1.5 g illumination using a one-dimensional (1-D) model, i.e. personal computer one dimensional (PC1D). Findings The highest conversion efficiency of about 15.3 per cent was achieved for ultrathin CdTe solar cell with a ZnTe BSF layer. The results of simulation were compared with experimental and analytical results by other researchers. Originality/value In this paper, according to the authors’ knowledge ZnO:Al/CdS/CdTe/ZnTe is simulated by PC1D model for the first time and is compared with experimental result (ZnO:Al/CdS/CdTe). The results show a suitable performance.

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13

Ahmad, Farhan, Nadir Qurban, Zain Fatima, Toqeer Ahmad, Iqra Zahid, Ahmad Ali, Sehrish Rana Rajpoot, Muhammad Wasim Tasleem, and Esha Maqbool. "Electrical Characterization of II-VI Thin Films for Solar Cells Application." ASEAN Journal of Science and Engineering 2, no. 3 (February 10, 2022): 199–208. http://dx.doi.org/10.17509/ajse.v2i3.39425.

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Cds and CdTe both are effective absorber semiconductors for thin-film solar cells. It is a naturally n-type material, which has a direct bandgap value of 2.42 eV at room temperature It has great importance in light detectors in this work, CdS thin films (TF) were synthesized on glass substrates by RF Magnetron sputtering technique in an inert gas atmosphere. The electrical properties of CdS were characterized by the Van Der Pauw method. The films showed p-type conductivity, while the films deposited at different annealed times exhibited n-type conductivity. The resistivity of the CdTe films decrease as the conductivity increased. As the source rate was increased, the hole concentration in the as-grown p-type CdTe films increased. It was also reported annealing process affects the electrical properties. Al doping CdS the value of resistivity becomes minimum as the resistivity becomes maximum although mobility has maximum value after an increase in Al doping the mobility value. As a result, the CdS/CdTe thin-film showed enhanced electrical properties for solar cell applications.

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Jafarov, Maarif Ali, E. F. Nasirov, and S. A. Jahangirova. "ZnS/Cu2ZnSnS4/CdTe/In Thin Film Structure for Solar Cells." JOURNAL OF ADVANCES IN PHYSICS 14, no. 2 (June 5, 2018): 5435–41. http://dx.doi.org/10.24297/jap.v14i2.7395.

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A solar cell with glass/ITO/ZnS/Cu2ZnSnS4/CdTe/In structure has been fabricated using all-electrodeposited ZnS, Cu2ZnSnS4 and CdTe thin films. The three semiconductor layers were electrodeposited using a two-electrode system for process simplification. The incorporation of a wide bandgap amorphous ZnS as a buffer/window layer to form ITO/ZnS/Cu2ZnSnS4/CdTe/In solar cell resulted in the formation of this 3-layer device structure. This has yielded corresponding improvement in all the solar cell parameters resulting in a conversion efficiency >12% under AM1.5 illumination conditions at room temperature. These results demonstrate the advantages of the multi-layer device architecture over the conventional 2-layer structure.

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Bhari, Bibi Zulaika, Kazi Sajedur Rahman, Puvaneswaran Chelvanathan, and Mohd Adib Ibrahim. "Numerical Simulation of Ultrathin CdTe Solar Cell by SCAPS-1D." IOP Conference Series: Materials Science and Engineering 1278, no. 1 (February 1, 2023): 012002. http://dx.doi.org/10.1088/1757-899x/1278/1/012002.

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Abstract Cadmium telluride (CdTe) has been recognized as one of the efficient and cost-effective thin film solar cell materials with a direct band energy of 1.5 eV. CdTe has long been a leading material in fabrication of solar cell due to its high optical absorption coefficient and ideal band gap. Despite the advantages of CdTe PV technology, CdTe is facing the challenge of Te scarcity. However, it is possible to decrease the CdTe thickness without much compromise in efficiency. Reducing the absorber layer thickness can lower the cost and usage of materials. It can assist to produce large scale CdTe solar cell module as Te is not an earth-abundant element. Numerical simulation of thin film solar cell is a crucial process for defining the possibility of anticipated solar structures, predicting the impact of differences in material characteristics and geometry on overall efficiency. In this research, Solar Cell Capacitance Simulator (SCAPS-1D) is applied to explore the impact of absorber layer thickness and carrier concentration in realizing ultrathin CdTe solar cell. It has been found that 500 nm thick absorber layer is sufficient for acceptable range of cell efficiency. Simulation results of 500 nm CdTe with the carrier concentration of 1.0 × 1014 cm−3 has an efficiency of 2.2%. For CdTe carrier concentration of 1.0 × 1017 cm−3, the efficiency increases to 13.22% with open-circuit voltage of 0.988 V, a short-circuit current density of 16.19 mA/cm2 and fill factor of 82.54%. The optimal numerical solar cell design suggests an approach to further enhance the efficiency of CdTe solar cells.

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Hendi, A., R. Alkhraif, H. Alshehri, F. AlKallas, M. Almoneef, A. Laref, M. Awad, et al. "Photovoltaic Performance of Thin-Film CdTe for Solar Cell Applications." Journal of Nanofluids 10, no. 1 (March 1, 2021): 91–97. http://dx.doi.org/10.1166/jon.2021.1763.

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In the current investigation, we report a theoretical study to acquire the highest feasible efficiency of cadmium telluride (CdTe) thin-films. It is well recognized that CdTe crystallizes in cubic zinc-blende structure and its direct band gap of 1.5 eV turned it out as a potential candidate for photovoltaic (PV) applications. Our calculations are founded on Shockley-Queisser (SQ) limit to simulate the open-circuit voltage, current density, and filling factor versus the variation of photon energy up to 4.0 eV. These key parameters of SQ change with the variation of energy between 0.3 to 3.5 eV. This is owing to the strong optical absorption (> 104 cm−1) and direct band gap of 1.5 eV, which make CdTe thin-film suitable for single junction solar cell and ideal for PV applications. It is observed that the optical absorption enhances as the thickness of the absorbed layer increases. This will effectively provide a theoretical support to the industry of global solar energy that is anticipated to be sustainable in the future.

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Romeo, Alessandro, and Elisa Artegiani. "CdTe-Based Thin Film Solar Cells: Past, Present and Future." Energies 14, no. 6 (March 18, 2021): 1684. http://dx.doi.org/10.3390/en14061684.

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CdTe is a very robust and chemically stable material and for this reason its related solar cell thin film photovoltaic technology is now the only thin film technology in the first 10 top producers in the world. CdTe has an optimum band gap for the Schockley-Queisser limit and could deliver very high efficiencies as single junction device of more than 32%, with an open circuit voltage of 1 V and a short circuit current density exceeding 30 mA/cm2. CdTe solar cells were introduced at the beginning of the 70s and they have been studied and implemented particularly in the last 30 years. The strong improvement in efficiency in the last 5 years was obtained by a new redesign of the CdTe solar cell device reaching a single solar cell efficiency of 22.1% and a module efficiency of 19%. In this paper we describe the fabrication process following the history of the solar cell as it was developed in the early years up to the latest development and changes. Moreover the paper also presents future possible alternative absorbers and discusses the only apparently controversial environmental impacts of this fantastic technology.

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Zeng, Guanggen, Xia Hao, Shengqiang Ren, Lianghuan Feng, and Qionghua Wang. "Application of ALD-Al2O3 in CdS/CdTe Thin-Film Solar Cells." Energies 12, no. 6 (March 22, 2019): 1123. http://dx.doi.org/10.3390/en12061123.

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The application of thinner cadmium sulfide (CdS) window layer is a feasible approach to improve the performance of cadmium telluride (CdTe) thin film solar cells. However, the reduction of compactness and continuity of thinner CdS always deteriorates the device performance. In this work, transparent Al2O3 films with different thicknesses, deposited by using atomic layer deposition (ALD), were utilized as buffer layers between the front electrode transparent conductive oxide (TCO) and CdS layers to solve this problem, and then, thin-film solar cells with a structure of TCO/Al2O3/CdS/CdTe/BC/Ni were fabricated. The characteristics of the ALD-Al2O3 films were studied by UV–visible transmittance spectrum, Raman spectroscopy, and atomic force microscopy (AFM). The light and dark J–V performances of solar cells were also measured by specific instrumentations. The transmittance measurement conducted on the TCO/Al2O3 films verified that the transmittance of TCO/Al2O3 were comparable to that of single TCO layer, meaning that no extra absorption loss occurred when Al2O3 buffer layers were introduced into cells. Furthermore, due to the advantages of the ALD method, the ALD-Al2O3 buffer layers formed an extremely continuous and uniform coverage on the substrates to effectively fill and block the tiny leakage channels in CdS/CdTe polycrystalline films and improve the characteristics of the interface between TCO and CdS. However, as the thickness of alumina increased, the negative effects of cells were gradually exposed, especially the increase of the series resistance (Rs) and the more serious “roll-over” phenomenon. Finally, the cell conversion efficiency (η) of more than 13.0% accompanied by optimized uniformity performances was successfully achieved corresponding to the 10 nm thick ALD-Al2O3 thin film.

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Mekky, Abdel-baset H. "Simulation and modeling of the influence of temperature on CdS/CdTe thin film solar cell." European Physical Journal Applied Physics 87, no. 3 (September 2019): 30101. http://dx.doi.org/10.1051/epjap/2019190037.

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Semiconductor materials cadmium sulfide (CdS) and cadmium telluride (CdTe) are employed in the fabrication of thin film solar cells of relatively excessive power conversion efficiency and low producing price. Simulations of thin film CdS/CdTe solar cell were carried out using SCAPS-1D. The influence of temperature field on the variation of CdTe solar cell parameters such as current–voltage, capacitance–voltage characteristics and the external quantum efficiency was investigated theoretically. For use temperatures, one obtains the external quantum efficiency has the same profiles. However, the effect of the temperature on the Mott-Schottky curves is slightly noted by variations on the characteristics. This conclusion can be used by solar cell manufacturers to improve the solar cell parameters with the biggest possible gain in device performance.

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BONNET, DIETER. "THE CdTe THIN FILM SOLAR CELL - AN OVERVIEW." International Journal of Solar Energy 12, no. 1-4 (January 1992): 1–14. http://dx.doi.org/10.1080/01425919208909746.

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Meyers, Peter V. "Design of a thin film CdTe solar cell." Solar Cells 23, no. 1-2 (January 1988): 59–67. http://dx.doi.org/10.1016/0379-6787(88)90007-5.

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Al-mebir, Alaa Ayad, Paul Harrison, Ali Kadhim, Guanggen Zeng, and Judy Wu. "Effect ofIn SituThermal Annealing on Structural, Optical, and Electrical Properties of CdS/CdTe Thin Film Solar Cells Fabricated by Pulsed Laser Deposition." Advances in Condensed Matter Physics 2016 (2016): 1–8. http://dx.doi.org/10.1155/2016/8068396.

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Anin situthermal annealing process (iTAP) has been introduced before the commonex situcadmium chloride (CdCl2) annealing to improve crystal quality and morphology of the CdTe thin films after pulsed laser deposition of CdS/CdTe heterostructures. A strong correlation between the two annealing processes was observed, leading to a profound effect on the performance of CdS/CdTe thin film solar cells. Atomic force microscopy and Raman spectroscopy show that the iTAP in the optimal processing window produces considerable CdTe grain growth and improves the CdTe crystallinity, which results in significantly improved optoelectronic properties and quantum efficiency of the CdS/CdTe solar cells. A power conversion efficiency of up to 7.0% has been obtained on thin film CdS/CdTe solar cells of absorber thickness as small as 0.75 μm processed with the optimal iTAP at 450°C for 10–20 min. This result illustrates the importance of controlling microstructures of CdTe thin films and iTAP provides a viable approach to achieve such a control.

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Danaher, W. J., L. E. Lyons, and G. C. Morris. "Thin film CdS/CdTe solar cells." Applications of Surface Science 22-23 (May 1985): 1083–90. http://dx.doi.org/10.1016/0378-5963(85)90243-0.

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von Huth, Palle, James E. Butler, and Reshef Tenne. "Diamond/CdTe: a new inverted heterojunction CdTe thin film solar cell." Solar Energy Materials and Solar Cells 69, no. 4 (November 2001): 381–88. http://dx.doi.org/10.1016/s0927-0248(01)00055-1.

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Phukan, Pallabi, and Dulen Saikia. "Optical and Structural Investigation of CdSe Quantum Dots Dispersed in PVA Matrix and Photovoltaic Applications." International Journal of Photoenergy 2013 (2013): 1–6. http://dx.doi.org/10.1155/2013/728280.

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CdSe quantum dots (QDs) dispersed in polyvinyl alcohol (PVA) matrix with their sizes within the quantum dot regime have been synthesized via a simple heat induced thermolysis technique. The effect of the concentrations of the cadmium source on the optical properties of CdSe/PVA thin films was investigated through UV-Vis absorption spectroscopy. The structural analysis and particle size determination as well as morphological studies of the CdSe/PVA nanocomposite thin films were done with the help of X-ray diffraction (XRD) and transmission electron microscopy (TEM). The XRD analysis reveals that CdSe/PVA nanocomposite thin film has a hexagonal (wurtzite) structure. A prototype thin film solar cell of CdSe/CdTe has been synthesized and its photovoltaic parameters were measured.

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Dharmadasa, I. M., and A. E. Alam. "How to Achieve Efficiencies beyond 22.1% for CdTe-Based Thin-Film Solar Cells." Energies 15, no. 24 (December 15, 2022): 9510. http://dx.doi.org/10.3390/en15249510.

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This review paper summarises the key issues of CdTe and CdS/CdTe solar cells as observed over the past four decades, and focuses on two growth techniques, electrodeposition (ED) and closed space sublimation (CSS), which have successfully passed through the commercialisation process. Comprehensive experience in electrical contacts to CdTe, surfaces & interfaces, electroplated CdTe and solar cell development work led to the design and experimentally test grading of band gap multilayer solar cells, which has been applied to the CdS/CdTe structure. This paper presents the consistent and reproducible results learned through electroplated CdTe and devices, and suggestions are made for achieving or surpassing the record efficiency of 22.1% using the CSS material growth technique.

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Hu, Song Bai, Rong Zhe Tang, Cai Juan Tian, Wei Li, Liang Huan Feng, Jing Quan Zhang, and Li Li Wu. "The Influence of Thickness on the Properties of Sb₂Te₃ Thin Films and its Application in CdS/CdTe Thin Film Solar Cells." Advanced Materials Research 225-226 (April 2011): 789–93. http://dx.doi.org/10.4028/www.scientific.net/amr.225-226.789.

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Sb2Te3thin films with thickness of 70, 100, 300, and 600nm were co-evaporated by vacuum evaporation. These films were annealed by 423K, 473K, 523K and 573K, respectively, in the protection of N2ambient. After that, the film structures were investigated by XRD. Composition of the films was surveyed XRF and XPS. Stoichiometric Sb2Te3thin films were prepared. Then the Sb2Te3thin films were applied to CdTe thin film solar cells as back contact layer. The influence of Sb2Te3thin films thickness on the performances of CdS/CdTe thin film solar cells were surveyed by light I-V characteristics and an efficiency of 12.27%, Voc=808.2mV, Jsc=25.1mA/cm2, FF= 0.6051 was obtained.

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28

Ye, Jian Min. "Efficiency Organic/Inorganic Composite Thin Film Solar Cells." Advanced Materials Research 805-806 (September 2013): 3–6. http://dx.doi.org/10.4028/www.scientific.net/amr.805-806.3.

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The development of CdTe/CdS solar cells on flexible substrates is reviewed in this article. Photovoltaic structures on lightweight and flexible substrates have several advantages over the heavy glass based structures in both terrestrial and space applications. The cells mounted on flexible foil are not fragile, the requirements of the supporting structures are minimum and they can be wrapped onto any suitably oriented or curved structures. The specific power of the solar cells is an important factor in space applications and hence development of photovoltaic devices on light weight substrates is interesting. CdTe is one of the leading candidates for photovoltaic applications due to its optimum band gap for the efficient photo-conversion and robustness for industrial production with a variety of film preparation methods. Flexible solar cells with conversion efficiencies exceeding 11% have been developed on polyimide foils. The development of CdTe devices on metallic substrates is impeded due to the lack of a proper ohmic contact between CdTe and the substrate. The polymer substrate has the advantage that the devices can be prepared in both superstrate and substrate configurations.

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29

Amin, Nowshad, Mohammad Rezaul Karim, and Zeid Abdullah ALOthman. "Impact of CdCl2 Treatment in CdTe Thin Film Grown on Ultra-Thin Glass Substrate via Close Spaced Sublimation." Crystals 11, no. 4 (April 7, 2021): 390. http://dx.doi.org/10.3390/cryst11040390.

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In this study, close-spaced sublimation (CSS) grown cadmium telluride (CdTe) thin films with good adhesion to 100 µm thin Schott D263T ultra-thin glass (UTG) were investigated. Cadmium chloride (CdCl2) treatment in vacuum ambient was executed to enhance the film quality and optoelectrical properties of CdTe thin film. The post-deposition annealing temperature ranging from 360–420 °C was examined to improve the CdTe film quality on UTG substrate. Various characterization techniques have been used to observe the compositional, morphological, optical, as well as electrical properties. Scanning electron microscopy (SEM) verified that the CdTe morphology and grain size could be controlled via CdCl2 treatment temperature. Energy Dispersive X-Ray Analysis (EDX) results confirmed that the annealing temperature range of 375–390 °C yielded the stoichiometric CdTe films. UV-Vis analysis estimated the post-treatment bandgap energy in the range of 1.39–1.46 eV. Carrier concentration and resistivity were obtained in the order of 1013 cm−3 and 104 Ω-cm, respectively. All the experimental results established that the CdCl2 treatment temperature range of 390–405 °C might be considered as the optimum process temperature for the deposition of CdTe solar cell on UTG substrate in close-spaced sublimation (CSS) method.

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30

K, Ramya, and Yuvaraja T. "Visual and Surface Properties of CdTe Thin Films on CdS/FTO Glass Substrates." International Journal of Electrical and Computer Engineering (IJECE) 6, no. 2 (April 1, 2016): 468. http://dx.doi.org/10.11591/ijece.v6i2.9064.

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<p>Cadmium telluride (CdTe) thin film material was deposited ontop of Cadmium Sulfide (CdS) substrate using vacuum evaporation technique. The sample was characterized using X-ray diffraction(XRD) and UV-VIS-NIR spectroscopy. XRD studies revealed that the sample was polycrystalline in nature. The SEM image showed that the sample is columnar in structure and the grains are uniform. Optical band gap of the CdTe thin film was estimated from transmittance and reflectance data and it was found 1.53eV.The structural, optical and surface properties of the film showed that the CdTe thin film materials can be used for fabrication of CdTe thin film solar cell.</p>

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31

K, Ramya, and Yuvaraja T. "Visual and Surface Properties of CdTe Thin Films on CdS/FTO Glass Substrates." International Journal of Electrical and Computer Engineering (IJECE) 6, no. 2 (April 1, 2016): 468. http://dx.doi.org/10.11591/ijece.v6i2.pp468-473.

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<p>Cadmium telluride (CdTe) thin film material was deposited ontop of Cadmium Sulfide (CdS) substrate using vacuum evaporation technique. The sample was characterized using X-ray diffraction(XRD) and UV-VIS-NIR spectroscopy. XRD studies revealed that the sample was polycrystalline in nature. The SEM image showed that the sample is columnar in structure and the grains are uniform. Optical band gap of the CdTe thin film was estimated from transmittance and reflectance data and it was found 1.53eV.The structural, optical and surface properties of the film showed that the CdTe thin film materials can be used for fabrication of CdTe thin film solar cell.</p>

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32

Jones, K. M., Y. Yan, F. S. Hasoon, and M. M. Al-Jassim. "Transmission Electron Microscopy Study of the Microstructure of Np- Etched CdTe Thin Films." Microscopy and Microanalysis 7, S2 (August 2001): 558–59. http://dx.doi.org/10.1017/s1431927600028865.

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Polycrystalline CdTe is a promising candidate for solar cells due to its nearly ideal band-gap, high absorption coefficient, and ease of film fabrication. Small-area CdTe/CdS cells with efficiencies of 16.0% have been demonstrated. The structure of a typical CdTe/CdS solar cell (Figure 1) consists of a glass superstrate, on which a thin layer of SnO2 is deposited (front contact), n-type CdS, p-type CdTe, and a back contact. Prior to applying the back contact to the CdTe, etching of the CdTe surface using a mixture of nitric and phosphoric (NP) acids is normally needed. It is known that the etching depletes a crystalline CdTe surface of Cd and creates a Te-rich layer. Two effects of the Te-rich layer has been proposed, namely, forming a Te-CdTe low-series-resistance contact and improving CdTe device stability by the gettering of Cu. Thus, the NP etching is an important process in the CdTe device fabrication. in this paper, we report on transmission electron microscopy (TEM) study of the microstructure of the surface of NP etched CdTe thin films.

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33

Efaz, Erteza Tawsif, Atiya Anjum Ava, MD Tanzidul Alam Khan, MD Mohaiminul Islam, and Afrin Sultana. "Parametric Analysis of CdTe/CdS Thin Film Solar Cell." IJARCCE 5, no. 6 (June 30, 2016): 401–4. http://dx.doi.org/10.17148/ijarcce.2016.5684.

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34

Y. Jamil, Nawfal. "Optimum Efficiency of CdS/ CdTe Thin Film Solar Cell." Rafidain Journal of Science 26, no. 1 (June 28, 2017): 133–39. http://dx.doi.org/10.33899/rjs.2017.139121.

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35

Britt, J., and C. Ferekides. "Thin‐film CdS/CdTe solar cell with 15.8% efficiency." Applied Physics Letters 62, no. 22 (May 31, 1993): 2851–52. http://dx.doi.org/10.1063/1.109629.

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36

Kadhim, Ali, Paul Harrison, Jake Meeth, Alaa Al-Mebir, Guanggen Zeng, and Judy Wu. "Development of Combinatorial Pulsed Laser Deposition for Expedited Device Optimization in CdTe/CdS Thin-Film Solar Cells." International Journal of Optics 2016 (2016): 1–7. http://dx.doi.org/10.1155/2016/1696848.

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A combinatorial pulsed laser deposition system was developed by integrating a computer controlled scanning sample stage in order to rapidly screen processing conditions relevant to CdTe/CdS thin-film solar cells. Using this system, the thickness of the CdTe absorber layer is varied across a single sample from 1.5 μm to 0.75 μm. The effects of thickness on CdTe grain morphology, crystal orientation, and cell efficiency were investigated with respect to different postprocessing conditions. It is shown that the thinner CdTe layer of 0.75 μm obtained the best power conversion efficiency up to 5.3%. The results of this work shows the importance that CdTe grain size/morphology relative to CdTe thickness has on device performance and quantitatively exhibits what those values should be to obtain efficient thin-film CdTe/CdS solar cells fabricated with pulsed laser deposition. Further development of this combinatorial approach could enable high-throughput exploration and optimization of CdTe/CdS solar cells.

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37

Gaewdang, Thitinai, N. Wongcharoen, P. Siribuddhaiwon, and N. Promros. "Influence of Substrate Temperature on Some Properties of Close-Spacing Thermally Evaporated CdTe Thin Films." Advanced Materials Research 55-57 (August 2008): 881–84. http://dx.doi.org/10.4028/www.scientific.net/amr.55-57.881.

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CdTe thin films with different substrate temperatures have been deposited by thermal evaporation method on glass substrate in vacuum chamber having low pressure about 3.0x10-5 mbar. According to XRD analysis, CdTe thin films are polycrystalline belonging to cubic structure with preferential orientation of (111) plane. The strongest peak intensity of XRD is observed in the film prepared with substrate temperature of 150°C. Band gap and band tail values of the as-deposited films were evaluated from the optical transmission spectra. The lowest dark sheet resistance value was obtained from the film prepared with substrate temperature of 150°C as well. Regarding to our experimental results, it may be indicated that the 150°C substrate temperature is the most suitable condition in preparing CdTe thin films for solar cell applications.

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38

Sun, Nan Hai. "Efficiency Inorganic Thin Film Solar Cells with Flexible Substrate." Applied Mechanics and Materials 217-219 (November 2012): 686–89. http://dx.doi.org/10.4028/www.scientific.net/amm.217-219.686.

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Анотація:

The development of CdTe/CdS solar cells on flexible substrates is reviewed in this article. Photovoltaic structures on lightweight and flexible substrates have several advantages over the heavy glass based structures in both terrestrial and space applications. The cells mounted on flexible foil are not fragile, the requirements of the supporting structures are minimum and they can be wrapped onto any suitably oriented or curved structures. The specific power of the solar cells is an important factor in space applications and hence development of photovoltaic devices on light weight substrates is interesting. CdTe is one of the leading candidates for photovoltaic applications due to its optimum band gap for the efficient photo-conversion and robustness for industrial production with a variety of film preparation methods. Flexible solar cells with conversion efficiencies exceeding 11% have been developed on polyimide foils. The development of CdTe devices on metallic substrates is impeded due to the lack of a proper ohmic contact between CdTe and the substrate. The polymer substrate has the advantage that the devices can be prepared in both “superstrate” and “substrate” configurations.

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39

Wu, Qian Qiong, and Xiao Ying Chang. "High Performance Flexible Solar Cells with CdTe Thin Film." Applied Mechanics and Materials 209-211 (October 2012): 1754–57. http://dx.doi.org/10.4028/www.scientific.net/amm.209-211.1754.

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Анотація:

The development of CdTe/CdS solar cells on flexible substrates is reviewed in this article. Photovoltaic structures on lightweight and flexible substrates have several advantages over the heavy glass based structures in both terrestrial and space applications. The cells mounted on flexible foil are not fragile, the requirements of the supporting structures are minimum and they can be wrapped onto any suitably oriented or curved structures. The specific power of the solar cells is an important factor in space applications and hence development of photovoltaic devices on light weight substrates is interesting. CdTe is one of the leading candidates for photovoltaic applications due to its optimum band gap for the efficient photo-conversion and robustness for industrial production with a variety of film preparation methods. Flexible solar cells with conversion efficiencies exceeding 11% have been developed on polyimide foils. The development of CdTe devices on metallic substrates is impeded due to the lack of a proper ohmic contact between CdTe and the substrate. The polymer substrate has the advantage that the devices can be prepared in both “superstrate” and “substrate” configurations.

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40

Ghosh, Bablu K., Syafiqa Nasir, Kenneth T. K. Teo, and Ismail Saad. "ZnO thickness and ZnTe back contact effect of CdTe thin film solar cell Voc and efficiency progression." Materials Research Express 8, no. 11 (November 1, 2021): 116405. http://dx.doi.org/10.1088/2053-1591/ac38de.

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Abstract CdTe thin film (TF) solar cells are most promising photovoltaic (PV) technology in commercial platform. Back contacts and interface defects related opto-electrical losses are still vital to limit its further technological benefit. TF PV cells shallow recombination and parasitic loss lessening purpose carrier selective back contact with band matching window layers are essential. Beside that back and front contact thickness choice is vital for field associated selective carrier collection and generous optical transmission into the active junction of the cell. It can make variation of cell efficiency. Window and front contact layers band edge variation and back contact thickness effect is analyzed by SCAPS-1D simulation software. ZnO and SnO2 front contact for CdS and CdSe window layers effect are numerically studied for 1 μm CdTe thin film PV cell. Significance of materials for front contact and its thickness effect on current density while ZnTe back surface field contact thickness effect on open circuit voltage and efficiency are demonstrated. Finally, ZnO/CdS/CdTe/ZnTe cell of 0.925 V open circuit voltage and 19.06% efficiency has been achieved for 90 nm of ZnTe with Molybdenum (Mo) back contact.

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41

Meng, Sean, and Yanfa Yan. "Band Gap Optimization of CdTeSe Thin-Film Solar Cells." JOURNAL OF ADVANCES IN PHYSICS 12, no. 2 (August 30, 2016): 4213–18. http://dx.doi.org/10.24297/jap.v12i2.5247.

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Device modeling and simulation studies of a CdTeSe thin film solar cell have been carried out. A variety of band-gap profiles, including ungraded, front graded, back graded, and double graded profiles of the CdTeSe absorber layer are examined and their performance characteristics have been analyzed. The calculation reveals that single junction cells with band-gap at the optimum value of 1.38 eV exhibit the maximum performance; alloys of CdTe and CdSe with a ratio of 1:1 forming CdTe0.5Se0.5 achieve the band-gap of 1.38 eV due to the bowing effect. The benefits of the band-gap grading are evaluated when the minimum band-gap is set at the optimum band-gap of 1.38 eV. It is shown that only few graded band-gap profiles exhibit an increase in efficiency, while most of graded profiles reduce performances.

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42

Jiang, Meng, Zuo Lei Liu, Zhi Lei, Qiong Yi Gu, and Jian Guo Zhu. "The Chloride Annealing for Back Contact Layer Free CdTe Solar Cells." Materials Science Forum 852 (April 2016): 799–804. http://dx.doi.org/10.4028/www.scientific.net/msf.852.799.

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The large area CdTe thin film samples were used for chloride annealing. The CuCl2/NH4Cl solution was attached on the CdTe surface. After annealing treatment, the CdTe solar cells were prepared. The structure of the thin films and the properties of the CdTe solar cells were tested for studying the effect of the ratio of Cu/Cl, solution concentration and the annealing temperature. At last the performance of CuCl2/NH4Cl annealing cells, ZnTe back contact cells and C:Te,Cu back contact cells were compared. Without back contact layers the efficiency of the CdTe solar cells reached 11.13% with chloride annealing.

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43

BARKER, J., S. P. BINNS, D. R. JOHNSON, R. J. MARSHALL, S. OKTIK, M. E. ÖZSAN, M. H. PATTERSON, et al. "ELECTRODEPOSITED CdTe FOR THIN FILM SOLAR CELLS." International Journal of Solar Energy 12, no. 1-4 (January 1992): 79–94. http://dx.doi.org/10.1080/01425919208909752.

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44

Voronkov, É. N., A. E. Sharonov, and V. V. Kolobaev. "Photomemory in CdTe thin-film solar cells." Semiconductors 33, no. 4 (April 1999): 461–62. http://dx.doi.org/10.1134/1.1187711.

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45

Wang, Zhouling, Yu Hu, Wei Li, Guanggen Zeng, Lianghuan Feng, Jingquan Zhang, Lili Wu, and Jingjing Gao. "Effect of Annealing on the Properties of Antimony Telluride Thin Films and Their Applications in CdTe Solar Cells." International Journal of Photoenergy 2014 (2014): 1–6. http://dx.doi.org/10.1155/2014/341518.

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Antimony telluride alloy thin films were deposited at room temperature by using the vacuum coevaporation method. The films were annealed at different temperatures in N2ambient, and then the compositional, structural, and electrical properties of antimony telluride thin films were characterized by X-ray fluorescence, X-ray diffraction, differential thermal analysis, and Hall measurements. The results indicate that single phase antimony telluride existed when the annealing temperature was higher than 488 K. All thin films exhibited p-type conductivity with high carrier concentrations. Cell performance was greatly improved when the antimony telluride thin films were used as the back contact layer for CdTe thin film solar cells. The dark current voltage and capacitance voltage measurements were performed to investigate the formation of the back contacts for the cells with or without Sb2Te3buffer layers. CdTe solar cells with the buffer layers can reduce the series resistance and eliminate the reverse junction between CdTe and metal electrodes.

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46

Li, Tingkai. "The Research and Development of the Third Generation of Photovoltaic Modules." MRS Proceedings 1538 (2013): 151–60. http://dx.doi.org/10.1557/opl.2013.683.

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ABSTRACTIn order to make high efficiency and low cost solar cell modules, the concept of third generation of photovoltaic modules have been provided. The first generation solar cell: Crystal Si solar cell including single crystal and poly-crystal Si solar cell；The second generation solar cell：Thin film solar cell including Si base thin film, CIGS, CdTe and III-V thin films; The third generation solar cell is the future high efficiency and low cost solar cell modules, such as low cost quantum dots solar cell, Si base thin film tandem and triple cell modules, III-V solar cell on Si, HIT solar cell and nanotechnology with no vacuum technique such as printable technologies and etc. This paper reviewed the advantages and disadvantages of each generation of the solar cell modules and technologies and discussed the research and development of the third generation of photovoltaic modules including the detail technology developments.

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47

Kharangarh, Poonam Rani, George E. Georgiou, and Ken K. Chin. "Temperature Dependence of Electrical Characterization in n+ - CdS/ p - CdTe Thin Film Solar Cells – Study of Shallow/Deep Defects." MRS Proceedings 1493 (2013): 161–67. http://dx.doi.org/10.1557/opl.2013.29.

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ABSTRACTFor CdTe there is no real distinction between defects and impurities exists when non-shallow dopants are used. These dopants act as beneficial impurities or detrimental carrier trapping centers. Unlike Si, the common assumption that the trap energy level Et is around the middle of the band-gap Ei, is not valid for thin film CdTe. Trap energy levels in CdTe band-gap can distributed with wide range of energy levels above EF. To identify the real role of traps and dopants that limit the solar cell efficiency, a series of samples were investigated in thin film n+-CdS/p-CdTe solar cell, made with evaporated Cu as a primary back contact. It is well known that process temperatures and defect distribution are highly related. This work investigates these shallow level impurities by using temperature dependent current-voltage (I-V-T) and temperature dependent capacitance-voltage (C-V-T) measurements. I-V-T and C-V-T measurements indicate that a large concentration of defects is located in the depletion region. It further suggests that while modest amounts of Cu enhance the cell performance by improving the back contact to CdTe, the high temperature (greater than ∼100°C) process condition degrade device quality and reduce the solar cell efficiency. This is possibly because of the well-established Cu diffusion from the back contact into CdTe. Hence, measurements were performed at lower temperatures (T = 150K to 350K). The observed traps are due to the thermal ionization of impurity centers located in the depletion region of p-CdTe/n+-CdS junction. For our n+-CdS/p-CdTe thin film solar cells, hole traps were observed that are verified by both the measurement techniques. These levels are identical to the observed trap levels by other characterization techniques.

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48

Baines, Tom, Guillaume Zoppi, Leon Bowen, Thomas P. Shalvey, Silvia Mariotti, Ken Durose, and Jonathan D. Major. "Incorporation of CdSe layers into CdTe thin film solar cells." Solar Energy Materials and Solar Cells 180 (June 2018): 196–204. http://dx.doi.org/10.1016/j.solmat.2018.03.010.

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49

Bonnet, Dieter, and Peter Meyers. "Cadmium-telluride—Material for thin film solar cells." Journal of Materials Research 13, no. 10 (October 1998): 2740–53. http://dx.doi.org/10.1557/jmr.1998.0376.

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Due to its basic optical, electronic, and chemical properties, CdTe can become the base material for high-efficiency, low-cost thin film solar cells using robust, high-throughput manufacturing techniques. CdTe films suited for photovoltaic energy conversion have been produced by nine different processes. Using n-type CdS as a window-partner, solar cells of up to 16% efficiency have been made in the laboratory. Presently five industrial enterprises are striving to master low cost production processes and integrated modules have been delivered in sizes up to 60 × 120 cm2, showing efficiencies up to 9%. Stability, health, and environmental issues will not limit the commercial potential of the final product. The technology shows high promise for achieving cost levels of $0.5/Wp at 15% efficiency. In order to achieve this goal, scientists will have to develop a more detailed understanding of defect chemistry and device operation of cells, and engineers will have to develop methods for high-throughput manufacturing.

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50

Xu, Ao, Qichuan Huang, Kaiying Luo, Donghuan Qin, Wei Xu, Dan Wang, and Lintao Hou. "Efficient Nanocrystal Photovoltaics with PTAA as Hole Transport Layer." Nanomaterials 12, no. 17 (September 3, 2022): 3067. http://dx.doi.org/10.3390/nano12173067.

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The power conversion efficiency (PCE) of solution-processed CdTe nanocrystals (NCs) solar cells has been significantly promoted in recent years due to the optimization of device design by advanced interface engineering techniques. However, further development of CdTe NC solar cells is still limited by the low open-circuit voltage (Voc) (mostly in range of 0.5–0.7 V), which is mainly attributed to the charge recombination at the CdTe/electrode interface. Herein, we demonstrate a high-efficiency CdTe NCs solar cell by using organic polymer poly[bis(4–phenyl)(2,4,6–trimethylphenyl)amine] (PTAA) as the hole transport layer (HTL) to decrease the interface recombination and enhance the Voc. The solar cell with the architecture of ITO/ZnO/CdS/CdSe/CdTe/PTAA/Au was fabricated via a layer-by-layer solution process. Experimental results show that PTAA offers better back contact for reducing interface resistance than the device without HTL. It is found that a dipole layer is produced between the CdTe NC thin film and the back contact electrode; thus the built–in electric field (Vbi) is reinforced, allowing more efficient carrier separation. By introducing the PTAA HTL in the device, the open–circuit voltage, short-circuit current density and the fill factor are simultaneously improved, leading to a high PCE of 6.95%, which is increased by 30% compared to that of the control device without HTL (5.3%). This work suggests that the widely used PTAA is preferred as the excellent HTL for achieving highly efficient CdTe NC solar cells.

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