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1
Desai, Darshini. "Electrical characterization of thin film CdTe solar cells." Access to citation, abstract and download form provided by ProQuest Information and Learning Company; downloadable PDF file, 320 p, 2007. http://proquest.umi.com/pqdweb?did=1257806491&sid=6&Fmt=2&clientId=8331&RQT=309&VName=PQD.
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2
Muthuswamy, Gokul. "Numerical modeling of CdS/CdTe thin film solar cell using MEDICI." [Tampa, Fla.] : University of South Florida, 2005. http://purl.fcla.edu/fcla/etd/SFE0001360.
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3
Sugimoto, Yoshiharu. "Studies of CdTe electrodeposition." Thesis, University of Southampton, 1993. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.241263.
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4
Tetali, Bhaskar Reddy. "Stability studies of CdTe/CdS thin film solar cells." [Tampa, Fla.] : University of South Florida, 2005. http://purl.fcla.edu/fcla/etd/SFE0001135.
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5
Hsu, Chih-An. "Absorber and Window Study – CdSexTe1-x/CdTe Thin Film Solar Cells." Scholar Commons, 2019. https://scholarcommons.usf.edu/etd/7813.
Повний текст джерелаАнотація:
CdTe an II-VI semiconductor has been a leading thin film photovoltaic material due to its near ideal bandgap and high absorption coefficient [1]. The typical thin film CdTe solar cells have been of the superstrate configuration with CdS (Eg-2.42eV) as the n-type heterojunction partner. Due to the relatively narrow bandgap of CdS, a wider bandgap n-type window layer has recently emerged as a promising substitute: alloys of MgyZn1-yO have been successfully used as the emitter or window layer. The benefits in the usage of MgyZn1-yO (MZO) are its tunable bandgap and wide optical spectrum on optoelectronic devices. Due to an increasing bandgap of the window layer, the carrier collection can be improved in the short wavelength range (<500 nm). In addition alloys of CdSexTe1-x (CST) have also been used in the absorber layer (i.e., CST/CdTe) for the fabrication of CdTe devices to improve the carrier collection and lifetime [2]. The lower bandgap of the CST alloy can lead to higher short-circuit current (JSC), but it can also result in lower open circuit voltage (VOC). Another critical aspect of the CdTe solar cell is the use of copper as a p-type dopant, which is typically incorporated in the cell during the fabrication of the back contact. The most challenging issue related to further advancing the CdTe solar cell efficiency is the relatively low level of p-type doping, which limits the VOC. Efforts to dope CdTe with group V dopants are yet to produce the desired results.
ZnO has been used as an effective high resistivity transparent. When CdTe is deposited directly on sputtered ZnO, VOC of typically 500-600 mV is produced. Band alignment measurements indicate that a negative conduction band offset with CdS exists; alloying with MgO to produce MgyZn1-yO with a composition of y = 0.15 can produce a flat conduction band alignment with CdS. This material has an additional benefit for improving the energy bandgap of the MZO for better UV light transmission in the short wavelengths. By changing the magnesium content from y = 0 to 0.30 allowed researchers to make the tunable conduction band offset from a “cliff” to a “spike,” with both increased open-circuit voltage and fill factor as increasing magnesium compositions [3] — the bandgap gains as expected with increased magnesium composition. The large compositions (y > 0.30) of MgyZn1-yO cause the enormous spike result in S-kink in the IV measurement so that the FF decreases. Besides, due to the instability of MZO material, the fabrication process has to proceed carefully.
The properties of CST films and cells were investigated as a function of Se composition (x), substrate temperature (TSUB), and ambient used during the CSS deposition. The higher ratio of Se in CST alloy causes the smaller grain structures and lower bandgap, which profoundly detrimental to the device performance (VOC). However, the CST can be deposited in various substrate temperatures and different inert ambient gas to improve the grain structure by utilizing the especial Close Space Sublimation (CSS) deposition system. Therefore, despite the fact that the CST (25% Se) has the optical bandgap (1.37eV), the improvement of grain structure can slightly increase the doping concentration and decrease the grain boundary (GBs) due to increased alloys grain size 3X larger, which is contributed to improving the VOC [4]. The study of higher ratio Se of CST alloy is significant to achieve the high efficiency polycrystalline CST/CdTe photovoltaic devices.
The effect of Cu doping back contact in CdSexTe1-x (CST)/CdTe solar cells with varying amounts of Se (x) has been investigated. The Cu-based back contact was annealed at different thermal temperatures in order to vary the amount of Cu in-diffusion. Net p-type doping was found to increase as the back-contact annealing temperature increased. All cells exhibited a decrease in VOC with increased annealing temperature (i.e., higher Cu concertation), presumably due to a degradation of the lifetime with increased amounts of Cu [5]. However, cells with the highest Se composition appeared to exhibit a higher degree of tolerance to the amount of Cu – i.e., they exhibited a smaller loss in VOC with the increased amount of Cu.
Extrinsic p-type doping of CdSeTe can be fabricated using two different experimental processes. Firstly, by using group I elements such as, Cu to substitute Cd, which is promising during the back contact process. Secondly, using group V (P, As, Sb) elements to substitute Te, and this is suitable for Cd-rich of intrinsic CdTe. Intrinsic CST alloy has lower hole density concentration as higher Se composition with limitation of the VOC. Thus, in order to increase the p-type net doping up to 1016 cm-3 the extrinsic P or As doping have been widely investigated recently. The research studies show the CST/CdTe devices lead to improve VOC up to 850 mV with higher hole density in higher Se compositions of As doped CST alloys. Nevertheless, the group V doped CdTe still cause the formation of compensating defects limits the upper boundary of dupability on the CdTe thin film solar cells. Even if a high hole density concentration is achieved for intrinsically-doped p-type CST/CdTe, it is believed the poor carrier lifetime in the CdTe side would still limit the VOC.
6
Palekis, Vasilios. "CdTe/CdS Thin Film Solar Cells Fabricated on Flexible Substrates." Scholar Commons, 2011. http://scholarcommons.usf.edu/etd/3280.
Повний текст джерелаАнотація:
Cadmium Telluride (CdTe) is a leading thin film photovoltaic (PV) material due to its near ideal bandgap of 1.45 eV and its high optical absorption coefficient. The typical CdTe thin film solar cell is of the superstrate configuration where a window layer (CdS), the absorber (CdTe) and a back contact are deposited onto glass coated with a transparent electrode.
Substrate CdTe solar cells where the above listed films are deposited in reverse are not common. In this study substrate CdTe solar cells are fabricated on flexible foils.
The properties of the Molybdenum back contact, Zinc Telluride (ZnTe) interlayer and CdTe absorber on the flexible foils were studied and characterized using X-Ray Diffraction (XRD), and Scanning Electron Microscopy (SEM).
Substrate curvature and film flaking was observed during the fabrication as a result of differences in thermal expansion coefficients between the substrate and the deposited films, and also due to impurity diffusion from the foil into the film stack. In order to overcome this problem diffusion barriers where used to eliminate contamination. Silicon dioxide (SiO2), silicon nitride (Si3N4) and molybdenum nitride (MoxNy) were used as such barriers.
Electrical characterization of completed devices was carried out by Current-Voltage (J-V), Capacitance-Voltage (C-V) and Spectral Response (SR) measurements.
Roll-over was observed in the first quadrant of J-V curves indicating the existence of a back barrier due to a Schottky back contact. The formation of non-rectifying contact to p-CdTe thin-film is one of the major and critical challenges associated with the fabrication of efficient and stable solar cells.
Several materials (ZnTe, Cu, Cu2Te, and Te) were studied as potential candidates for the formation of an effective back contact.
7
Lisco, Fabiana. "High rate deposition processes for thin film CdTe solar cells." Thesis, Loughborough University, 2015. https://dspace.lboro.ac.uk/2134/17965.
Повний текст джерелаАнотація:
This thesis describes the development of a fast rate method for the deposition of high quality CdS and CdTe thin films. The technique uses Pulsed DC Magnetron Sputtering (PDCMS). Surprisingly, the technique produces highly stable process conditions. CREST is the first laboratory worldwide to show that pulsed DC power may be used to deposit CdS and CdTe thin films. This is a very promising process technology with potential for eventual industrial deployment. The major advantage is that the process produces high deposition rates suitable for use in solar module manufacturing. These rates are over an order of magnitude faster than those obtained by RF sputtering. In common with other applications it has also been found that the energetics of the pulsed DC process produce excellent thin film properties and the power supply configuration avoids the need for complex matching circuits. Conventional deposition methodologies for CdS, Chemical Bath Deposition (CBD) and CdTe thin films, Electrodeposition (ED), have been chosen as baselines to compare film properties with Pulsed DC Magnetron Sputtering (PDCMS). One of the issues encountered with the deposition of CdS thin films (window layers) was the presence of pinholes. A Plasma cleaning process of FTO-coated glass prior to the deposition of the CdS/CdTe solar cell has been developed. It strongly modifies and activates the TCO surface, and improves the density and compactness of the deposited CdS thin film. This, in turn, improves the optical and morphological properties of the deposited CdS thin films, resulting in a higher refractive index. The pinhole removal and the increased density allows the use of a much thinner CdS layer, and this reduces absorption of blue spectrum photons and thereby increases the photocurrent and the efficiency of the thin film CdTe cell. Replacing the conventional magnetic stirrer with an ultrasonic probe in the chemical bath (sonoCBD) was found to result in CdS films with higher optical density, higher refractive index, pinhole and void-free, more compact and uniform along the surface and through the thickness of the deposited material. PDCMS at 150 kHz, 500 W, 2.5 μs, 2 s, results in a highly stable process with no plasma arcing. It allows close control of film thickness using time only. The CdS films exhibited a high level of texture in the <001> direction. The grain size was typically ~50 nm. Pinholes and voids could be avoided by reducing the working gas pressure using gas flows ii below 20 sccm. The deposition rate was measured to be 1.33 nm/s on a rotating substrate holder. The equivalent deposition rate for a static substrate is 8.66 nm/s, which is high and much faster than can be achieved using a chemical bath deposition or RF magnetron sputtering. The transmission of CdS can be improved by engineering the band gap of the CdS layer. It has been shown that by adding oxygen to the working gas pressure in an RF sputtering deposition process it is possible to deposit an oxygenated CdS (CdS:O) layer with an improved band gap. In this thesis, oxygenated CdS films for CdTe TF-PV applications have been successfully deposited by using pulsed DC magnetron sputtering. The process is highly stable using a pulse frequency of 150 kHz and a 2.5 μs pulse reverse time. No plasma arcing was detected. A range of CdS:O films were deposited by using O2 flows from 1 sccm to 10 sccm during the deposition process. The deposition rates achieved using pulsed DC magnetron sputtering with only 500 W of power to the magnetron target were in the range ~1.49 nm/s ~2.44 nm/s, depending on the oxygen flow rate used. The properties of CdS thin films deposited by pulsed DC magnetron sputtering and chemical bath deposition have been studied and compared. The pulsed DC magnetron sputtering process produced CdS thin films with the preferred hexagonal <001> oriented crystalline structure with a columnar grain growth, while sonoCBD deposited films were polycrystalline with a cubic structure and small grainy crystallites throughout the thickness of the films. Examination of the PDCMS deposited CdS films confirmed the increased grain size, increased density, and higher crystallinity compared to the sonoCBD CdS films. The deposition rate for CdS obtained using pulsed DC magnetron sputtering was 2.86 nm/s using only 500 W power on a six inch circular target compared to the much slower (0.027 nm/s) for the sonoChemical bath deposited layers. CdTe thin films were grown on CdS films prepared by sonoCBD and Pulsed DC magnetron sputtering. The results showed that the deposition technique used for the CdS layer affected the growth and properties of the CdTe film and also determined the deposition rate of CdTe, being 3 times faster on the sputtered CdS. PDCMS CdTe layers were deposited at ambient temperature, 500 W, 2.9 μs, 10 s, 150 kHz, with a thickness of approximately 2 μm on CdS/TEC10 coated glass. The layers appear iii uniform and smooth with a grain size less than 100 nm, highly compact with the morphology dominated by columnar grain growth. Stress analysis was performed on the CdTe layers deposited at room temperature using different gas flows. Magnetron sputtered thin films deposited under low gas pressure are often subject to compressive stress due to the high mobility of the atoms during the deposition process. A possible way to reduce the stress in the film is the post-deposition annealing treatment. As the lattice parameter increased; the stress in the film is relieved. Also, a changing the deposition substrate temperature had an effect on the microstructure of CdTe thin films. Increasing the deposition temperature increased the grain size, up to ~600 nm. CdTe thin films with low stress have been deposited on CdS/TEC10 coated glass by setting the deposition substrate temperature at ~200°C and using high argon flows ~ 70 sccm Ar. Finally, broadband multilayer ARCs using alternate high and low refractive index dielectric thin films have been developed to improve the light transmission into solar cell devices by reducing the reflection of the glass in the extended wavelength range utilised by thin-film CdTe devices. A four-layer multilayer stack has been designed and tested, which operates across the wavelength range used by thin-film CdTe PV devices (400 850 nm). Optical modelling predicts that the MAR coating reduces the WAR (400-850 nm) from the glass surface from 4.22% down to 1.22%. The application of the MAR coating on a thin-film CdTe solar cell increased the efficiency from 10.55% to 10.93% or by 0.38% in absolute terms. This is a useful 3.6% relative increase in efficiency. The increased light transmission leads to improvement of the short-circuit current density produced by the cell by 0.65 mA/cm2. The MAR sputtering process developed in this work is capable of scaling to an industrial level.
8
Alfadhili, Fadhil K. "Development of Back Contacts for CdTe Thin Films Solar Cells." University of Toledo / OhioLINK, 2020. http://rave.ohiolink.edu/etdc/view?acc_num=toledo1588962981116943.
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9
Bapanapalli, Srilatha. "Cds/cdte thin film solar cells with zinc stannate buffer layer." [Tampa, Fla.] : University of South Florida, 2005. http://purl.fcla.edu/fcla/etd/SFE0001004.
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10
Yilmaz, Sibel. "Thin film CDTE solar cells deposited by pulsed DC magnetron sputtering." Thesis, Loughborough University, 2017. https://dspace.lboro.ac.uk/2134/31838.
Повний текст джерелаАнотація:
Thin film cadmium telluride (CdTe) technology is the most important competitor for silicon (Si) based solar cells. Pulsed direct current (DC) magnetron sputtering is a new technique has been developed for thin film CdTe deposition. This technique is industrially scalable and provides uniform coating. It is also possible to deposit thin films at low substrate temperatures. A series of experiments are presented for the optimisation of the cadmium chloride (CdCl2) activation process. Thin film CdTe solar cells require CdCl2 activation process to improve conversion efficiencies. The role of this activation process is to increase the grain size by recrystallisation and to remove stacking faults. Compaan and Bohn [1] used the radio-frequency (RF) sputtering technique for CdTe solar cell deposition and they observed small blisters on CdTe layer surface. They reported that blistering occurred after the CdCl2 treatment during the annealing process. Moreover, void formation was observed in the CdTe layer after the CdCl2 activation process. Voids at the cadmium sulphide (CdS)/CdTe junction caused delamination hence quality of the junction is poor. This issue has been known for more than two decades but the mechanisms of the blister formation have not been understood. One reason may be the stress formation during CdTe solar cells deposition or during the CdCl2 treatment. Therefore, the stress analysis was performed to remove the defects observed after the CdCl2 treatment. This was followed by the rapid thermal annealing to isolate the CdCl2 effect by simply annealing. Small bubbles observed in the CdTe layer which is the first step of the blister formation. Using high resolution transmission electron microscopy (HR-TEM), it has been discovered that argon (Ar) working gas trapped during the deposition process diffuses in the lattice which merge and form the bubbles during the annealing process and grow agglomeration mainly at interfaces and grain boundaries (GBs). Blister and void formation were observed in the CdTe devices after the CdCl2 treatment. Therefore, krypton (Kr), neon (Ne) gases were used as the magnetron working gas during the deposition of CdTe layer. The results presented in this thesis indicated that blister and void formation were still existing with the use of Kr an Ne. Xe, which has a higher atomic mass than Kr, Ne, Ar, Cd and Te, was used as the magnetron working gas and it resulted in surface blister and void free devices.
11
Diso, Dahiru Garba. "Research and development of CdTe based thin film PV solar cells." Thesis, Sheffield Hallam University, 2011. http://shura.shu.ac.uk/4941/.
Повний текст джерелаАнотація:
The motivation behind this research is to bring cheap, low-cost and clean energy technologies to the society. Colossal use of fossil fuel has created noticeable pollution problems contributing to climate change and health hazards. Silicon based solar cells have dominated the market but it is cost is high due to the manufacturing process. Therefore, the way forward is to develop thin films solar cells using low-cost attractive materials, grown by cheaper, scalable and manufacturable techniques. The aim and objectives of this work is to develop low-cost, high efficiency solar cell using electrodeposition (ED) technique. The material layers include CdS and ZnTe as the window materials, while the absorber material is CdTe. Fabricating a suitable devices for solar energy conversion (i.e. glass/conducting glass/window material/absorber material/metal) structure. Traditional way of fabricating this structure is to grow window material (CdS) using chemical bath deposition (CBD) and absorber material (CdTe) using electrodeposition. However, CBD is a batch process and therefore creates large volumes of Cd-containing waste solutions each time adding high cost in manufacturing process. This research programme is therefore on development of an "All ED-solar cells" structure. Material studies were carried out using photoelectrochemical (PEC) studies, UV-Vis spectrophotometry, X-ray diffraction (XRD), X-ray fluorescence (XRF), scanning electron microscopy (SEM), atomic force microscopy (AFM), Raman spectroscopy and X-ray photoelectron spectroscopy (XPS). Furthermore, the electrical characterisation of fully fabricated devices was performed using current-voltage (I-V) and capacitance-voltage (C-V) measurements. This research programme has demonstrated that CdS and ZnTe window materials can be electrodeposited and used in thin film solar cell devices. The CdS electrolytic bath can be used for a period of 7 months without discarding it like in the CBD process which usually has life-time of 2-3 days. Further work should be carried out to increase the life-time of this bath, so that there can be used continuously minimising waste solution production in a manufacturing line. An efficiencies showing up to 7% was achieved for complete devices. However, the consistency and reproducibility remains un-resolved due to production of efficiencies between (2 - 7)% efficient devices varying from batch to batch. One of the reasons has been identified as the growth of CdS nano-rods with spacing between them. This is the first observation of CdS nano-rods and could open up many applications in nano-devices area. In order to improve the consistency of the solar cell efficiency, CdS layers should be grown with nano-rods aligned perpendicular to the glass surface and with tight packing without gaps, or with uniform coverage of CdS over the conducting glass surface. The possibility of growth of CdTe absorber layers with n- and p-type electrical conduction using change of stoichiometry was confirmed using the results presented in this thesis. This is a key finding, important to form multi-layer solar cell structures in the future.
12
Hesp, David. "Surface characterisation of contact materials for thin film CdTe solar cells." Thesis, University of Liverpool, 2015. http://livrepository.liverpool.ac.uk/2020780/.
Повний текст джерелаАнотація:
The deposition of tellurium onto the low index faces of copper single crystals induces a range of structures such as the (2√3×2√3)R30° surface substitutional alloy on the Cu(111) surface. These structures have been studied using a combination of scanning tunnelling microscopy (STM), low energy electron diffraction (LEED), X-ray photoemission (XPS) and ultraviolet photoemission (UPS). The deposition of tellurium on to the Cu(111) surface produced several structures including (2√3×2√3)R30° phase for a coverage of 0.17ML, For a coverage of 0.33ML a (√3×√3)R30° surface alloy was found. For coverages greater than 0.66ML a bulk alloy was formed which is consistent with the Cu3Te2 phase. The deposition of tellurium onto the Cu(110) surface produced a c(2×2) structure for a coverage of 0.5ML. Further deposition causes uniaxial compression of the over-layer as indicated by the LEED patterns. STM of this surface revealed two hexagonal domains rotated 30° with respect to each other. The deposition of tellurium on to the Cu(100) surface produced a p(2×2) over−layer for a coverage of 0.25ML. Further deposition lead to a series of coincidence lattices showing co-existing structures including split c(2×2) spots in the LEED pattern. A heavily streaked split c(2×2) LEED pattern was observed for tellurium coverages over 1ML dosage where STM images revealed a heavily striped surface with two domains perpendicular to each other. The larger structures observed suggest 3D growth of these stripes. On all 3 surfaces the work function was found to increase upon tellurium deposition. The electronic structure of indium oxide thin films was investigated after different treatments in ultra high vacuum using XPS and UPS. The (111) surface was investigated using a combination of hard and soft X-rays showing the lower portion of the valence band to be dominated by oxygen orbitals while the higher portion of the valence band indium orbitals. The valence band was then probed and the work function measured after different annealing treatments. For all 3 samples, (111) (110) and (100) the work function was found to increase when annealing in oxygen when compared to annealing in vacuum. This is attributed to the movement of the Fermi level as the carrier concentration at the surface is altered. The lowering of observed gap states when annealing in oxygen also suggests they may originate from oxygen vacancies within the surface.
13
Hodges, Deidra Ranel. "Development of CdTe thin film solar cells on flexible foil substrates." [Tampa, Fla] : University of South Florida, 2009. http://purl.fcla.edu/usf/dc/et/SFE0003210.
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14
Khrypunov, G., A. Meriuts, H. Klochko, T. Shelest, and A. Khrypunova. "Investigation of thin film solar cells on CdS/CdTe base with different back contacts." Thesis, Trans Tech Publications, Switzerland, 2010. http://repository.kpi.kharkov.ua/handle/KhPI-Press/40526.
Повний текст джерелаАнотація:
The peculiarities of photo-electric processes in thin film CdS/CdTe solar cells (SC) with different back electrodes (Cu/Au, ITO, Cu/ITO) havebeen studied. As it was established by capacitance – voltage (C-V) characteristics, the potential barrier heights for CdTe/Cu/Au and CdTe/ITO were 0.3 eV and 2.2 eV, respectively. The concentrations of charge carriers near back contact consisted 9⋅10²⁰ m⁻³ and 2⋅10²¹ m⁻³, respectively. A high carrier concentration and hi gh potential barrier of the ITO back contact caused the tunnel – recombination mechanism of the charge transport. The investigations of CdS/CdTe/ITO SC spectral photosensitivity testify a negative impact of the developed grain-boundary surface of the base layer on the processes of diffusion and separation of non-equilibrium currentcarriers generated by short-wave radiation. It is shown that the deposition of Cu nanolayer before the deposition of ITO films give stable efficiency 10% for bifacial CdS/CdTe solar cells.
15
Bhatti, Muhammad Tariq. "A novel method of production of CdS/CdTe thin film solar cells." Thesis, Northumbria University, 1993. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.356984.
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Paudel, Naba Raj. "Stability Issues in Sputtered CdS/CdTe Solar Cells." University of Toledo / OhioLINK, 2011. http://rave.ohiolink.edu/etdc/view?acc_num=toledo1321639226.
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17
Bayhan, Murat. "Preparation and characterisation of n-CdS/p-CdTe thin film solar cells." Thesis, Durham University, 1994. http://etheses.dur.ac.uk/1697/.
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18
Zhao, Hehong. "Impurity and back contact effects on CdTe/CdS thin film solar cells." [Tampa, Fla] : University of South Florida, 2008. http://purl.fcla.edu/usf/dc/et/SFE0002377.
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19
Viswanathan, Vijay. "Study Of Cu free back contacts to thin film CdTe solar cells." [Tampa, Fla.] : University of South Florida, 2004. http://purl.fcla.edu/fcla/etd/SFE0000348.
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20
Echendu, Obi Kingsley. "Thin film solar cells using all-electrodeposited ZnS, CdS and CdTe materials." Thesis, Sheffield Hallam University, 2014. http://shura.shu.ac.uk/19597/.
Повний текст джерелаАнотація:
The urgent global need for affordable alternative and clean energy supply has triggered extensive research on the development of thin-film solar cells since the past few decades. This has necessitated the search for low-cost, scalable and manufacturable thin-film semiconductor deposition techniques which in turn has led to the research on electrodeposition technique as a possible candidate for the deposition of semiconductor materials and the fabrication of thin-film solar cells using these materials. Electronic quality ZnS, CdS, and CdTe thin layers have been successfully electrodeposited from aqueous solutions on glass/fluorine-doped tin oxide (FTO) substrates, using simplified two-electrode system instead of the conventional three-electrode system. This process was also carried out in a normal physical chemistry laboratory instead of the conventional cleanroom that is very expensive to maintain. The electrodeposited materials were characterised for their structural, optical, electrical, morphological and compositional properties using x-ray diffraction, optical absorption, photoelectrochemical cell, current-voltage, scanning electron microscopy and energy dispersive x-ray techniques respectively. The results show that amorphous n-type and p-type ZnS layers were deposited by varying the concentrations of Zn[2+] and S[2-] in the deposition electrolyte. The CdS layers show hexagonal structure with n-type electrical conduction while CdTe layers show cubic structure with n-type electrical conduction, in the cathodic deposition potential range explored. Using CdTe as the main absorber material, fully fabricated solar cell structures of the n-n hetero-junction + large Schottky barrier type were fabricated instead of the conventional p-n junction type structure. Conventional post-deposition CdCl[2] treatment of CdTe rather carried out with a mixture of CdCl[2] and CdF[2], resulted in pronounced improvement of all the device parameters. Characterisation of the fully fabricated solar cells was done using current-voltage and capacitance-voltage techniques. Promising device parameters were obtained for the best devices, with barrier heights greater than (1.00 - 1.13) eV, short-circuit current densities of (20 - 48) mAcm[-2], open-circuit voltages of (500 - 670) mV, fill factors of (0.33 - 0.47) and overall conversion efficiencies of (5.0 - 12.0)%. Remarkably, the two highest efficiency figures of 10.4% and 12.0% came up for solar cells involving ZnS as buffer layer and window layer with the structures, glass/FTO/n-ZnS/n-CdS/n-CdTe/Au and glass/FTO/n-ZnS/n-CdTe/Au, respectively. At present, the reproducibility and consistency of these devices is poor, but these results demonstrate that these devices structures have the potential to achieve efficiency values over 20% when fully optimised.
21
Bittau, Francesco. "Analysis and optimisation of window layers for thin film CDTE solar cells." Thesis, Loughborough University, 2017. https://dspace.lboro.ac.uk/2134/32642.
Повний текст джерелаАнотація:
The work presented in this thesis focuses on the investigation and improvement of the window stack of layers for thin film CdTe solar cells fabricated in the Center for Renewable Energy Systems Technology (CREST) laboratories. In particular the aim was to change the standard structure including TCO, high resistive transparent (HRT)layer and CdS which is limited by the low transparency of the CdS layer, to a better performing one. The first result chapter of the thesis describes the study of ZnO HRT layers. ZnO thin films were deposited by radio frequency (RF) magnetron sputtering with different structural, optical and electrical properties which were characterized by X-ray diffraction, electron microscopy, spectrophotometry, Hall Effect method and 4-point probe. ZnO films were then incorporated in CdTe solar cells with the structure: FTO/ZnO/CdS/CdTe/Au back contact and the performance of these devices were compared with the film properties to single out trends and identify optimal film characteristics. By varying the deposition pressure of ZnO films, it was possible to increase their transparency and significantly increase their resistivity. While better transparency positively affected the solar cell current density output and efficiency, the resistivity of ZnO films did not show any clear impact on device efficiency. By increasing the deposition temperature the ZnO film grain size was increased. Increased FF was observed in devices incorporating ZnO layers with bigger grains, although this gain was partially counterbalanced by the Voc degradation, leading to a limited efficiency improvement. Finally the addition of oxygen had the main effect of increasing the resistivity of ZnO films, similarly to what happened with the increase of the sputtering pressure. In this case however, an improvement of FF, Jsc and efficiency was observed, especially at an O2/Ar ratio of 1%. By simulating the solar cells behavior with SCAPS-1D, it was found that these performance change can be explained by the variation of interface properties, precisely the amount of interface defects, rather than by bulk properties. The study presented in the second result chapter focuses on magnesium-doped zinc oxide (MZO) and the variation of its energy band structure. MZO was initially used as the HRT layer within a solar cell structure: FTO/MZO/CdS/CdTe/Au back contact. Sputtering MZO films with a target containing MgO 11 weight% and ZnO 89 weight% allowed for and increased band gap from 3.3 eV of intrinsic ZnO to 3.65 eV for MZO deposited at room temperature. Increasing the superstrate deposition temperature allowed for a further band gap increase up to 3.95 eV at 400 °C due mainly to an conduction band minimum upward shift. It was highlighted the importance to create a positive conduction band offset with the MZO layer conduction band slightly above the CdS conduction band, with an optimum found in this case to be 0.3 eV (efficiency 10.6 %). By creating a positive conduction band offset all the performance parameters (Voc, FF, Jsc, efficiency) significantly increased. One of the reasons for this improvement was found to be a diminished interface recombination due to a more ideal MZO/CdS band alignment. In the second part of this investigation the MZO was used as a replacement for the CdS in a simplified structure: FTO/MZO/CdTe/Au back contact. The concepts used to optimise the performance of these devices also involved tuning the conduction band alignment between MZO/CdTe and efficiencies of 12.5 % were achieved with a at conduction band offset. The efficiency increase was achieved mainly thanks to a better transparency of the MZO layer and a higher Jsc output, compared to devices using a CdS buffer layer. The MZO buffers have been tested in combination with different TCOs. Results are presented in the third result chapter and showed that AZO is a good alternative to FTO working effectively in combination with MZO. AZO/MZO efficiency thin film CdTe solar cells (12.6%, compared to 12.5% with FTO). It was found that increasing the IR transparency of the TCOs leads to a potentially higher Jsc. Achieving a better transparency was obtained by using TCOs with high mobility and lower carrier concentration (AZO and ITiO) and also by using a boro-aluminosilicate glass with low iron content. ITiO yielded the best opto-electrical properties among all the TCO materials. Devices incorporating ITiO however, showed lower performance then those using FTO and AZO. ITO/MZO windows also yielded poor performance. In addition, the ITO films deposited had a high carrier concentration leading to a high NIR absorption by plasma resonance and resulted not ideal for application in thin film CdTe PV.
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Zhao, Hehong. "Impurity and Back Contact Effects on CdTe/CdS Thin Film Solar Cells." Scholar Commons, 2007. https://scholarcommons.usf.edu/etd/580.
Повний текст джерелаАнотація:
CdTe/CdS thin film solar cells are the most promising cost-effective solar cells. The goal of this project is to improve the performance for CdS/CdTe devices by improving the open circuit voltage Voc and current density Jsc. Efforts focused on increasing the Voc, which include increasing the doping concentration by introducing Phosphorus and Antimony, finding and testing new back contact materials, and varying the ambient of CSS CdTe. In addition, the effect of Zn2SnO4 on the cells' performance was also studied.
Electrical characterization of the thin films and completed devices were carried out by Current-Voltage (J-V), Capacitance-Voltage (C-V), and Spectral Response (SR) measurements. Structural/chemical characterization was done by SEM, XRD and EDS analysis.
The ambient of CSS CdTe affects the growth rate, the grain size and electronic properties of CdTe. The N2/O2 mixture with varied ratio (N2/O2=9/1, 7/3, 5/5 and 1/9) was used in this study. The cells' performance and the net carrier concentration were studied as a function of the N2/O2 ratio. The net carrier concentration increases with the increasing O2 concentration.
The extrinsic impurities (P and Sb) were incorporated into CdTe layer. Phosphorus was directly introduced into CSS CdTe source. The Sb was incorporated into CdTe by a diffusion process. The effects of the annealing parameters, the excess Sb on CdTe surface, the CdCl2 treatment and the depth of Sb in CdTe were studied. Higher doping concentration up to 1016 cm-3 has been achieved, however, Voc is still in the range of 830 mV.
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Muftah, G. E. A. "Research and development of CuInTe2 and CdTe based thin film PV solar cells." Thesis, Sheffield Hallam University, 2010. http://shura.shu.ac.uk/20098/.
Повний текст джерелаАнотація:
The aim of this work was to make low cost thin film solar cells by electrodeposition, using two different materials; copper indium ditelluride (CuInTe[2]) and cadmium telluride (CdTe). CuInTe[2] was chosen to see if it could eliminate the problems associated with the more commonly used materials CuInSe[2] and CuInGaSe[2]. The CdTe was grown by a novel two electrode system and compared with material grown by the conventional three electrode system. Also the chlorine treatment of CdTe was investigated. CuInTe[2] films were electrochemically deposited from aqueous solutions and cyclic voltametry was used to determine suitable deposition parameters. X-ray diffraction, optical absorption and scanning electron microscopy were used to investigate the bulk structure, the band gap energy and the surface morphology of the materials respectively. It was found that layers deposited for 3 hours were ~1.5 mum thick and had a polycrystalline chalcopyrite structure with the band gap varying between 1.05 and 1.30 eV. Current-voltage characteristics of the CuInTe[2]/electrolyte, solid/liquid junctions were measured under dark and illuminated conditions, the layers were found to be photo active and p-type in electrical conduction. CdTe films were electrochemically deposited from aqueous solutions using both two and three electrode systems. Different preparative parameters such as growth voltage and heat treatment conditions were optimised by measuring the I-V characteristic of glass/FTO/CdS/CdTe/Au devices. The device efficiency was high at a growth voltage of 695 mV vs SCE for the 3 electrode system and 1570 mV for the two electrode system. The optimum annealing conditions were 350°C for 20 minutes in air. It is established that treating CdTe with chlorine has a beneficial effect on the solar cell device. For comparison, untreated and treated CdTe were characterised by various techniques. XRD analysis showed a cubic structure, with a significant increase in intensity from the (111) reflection after chlorine treatment. Optical absorption showed a decrease in the band gap energy after chlorine treatment. A considerable change in the morphology between untreated and treated CdTe was observed by SEM. I-V measurements of completed chlorine treated glass/FTO/CdS/CdTe/Au devices showed a significant improvement in efficiency. Furthermore, a comparison was made between the two and three electrode systems; the two electrode system produced a better quality material with higher efficiencies than that obtained by the three electrode system. The best efficiency obtained from the two electrode system was 8.7% while the best efficiency obtained from the three electrode system was 8.4%.
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Alamri, Saleh Naeeman O. "Preparation and characterisation of thin film CdS/CdTe solar cells produced by close space sublimation." Thesis, Durham University, 1999. http://etheses.dur.ac.uk/1139/.
Повний текст джерела
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Ullah, Hanif. "Simulation studies of photovoltaic thin film devices." Doctoral thesis, Universitat Politècnica de València, 2015. http://hdl.handle.net/10251/48800.
Повний текст джерелаАнотація:
To cope with energy requirements the utilization of renewable energies, particularly the Sun supplies the biggest and abundant energy source in Earth. Photo-voltaic and solar cell are the well advance and burning technology and a field of hot research. Majority of research centers and universities are working in this field. 1G, 2G, 3G and next generation of photo-voltaic cells have been developed and still to improve its efficiency and to decrease it 0.2 $/W cost.
Our work mainly based on the theoretical and physical analysis of thin-film Photovoltaic devices. We will explore different software used for the analysis of PV cells, and will analyse different simulation related to solar cells like open circuit voltage VOC, Short circuit current JSC, Fill Factor FF (%) and external Quantum efficiency (%) for thin film solar cell including CIGS, CIS, CGS, CdTe, SnS/CdS/ZnO etc. To have different analysis for different combination and different replacement for materials used in the solar cell fabrication. To cope with the PV cost and environmental hazards we have to find alternate solutions.Ullah, H. (2015). Simulation studies of photovoltaic thin film devices [Tesis doctoral no publicada]. Universitat Politècnica de València. https://doi.org/10.4995/Thesis/10251/48800
TESIS
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Wu, Jingjin. "Development of low cost CdS/CdTe thin film solar cells by using novel materials." Thesis, University of Liverpool, 2016. http://livrepository.liverpool.ac.uk/3001883/.
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Bridge, Chris. "Optical electrical and microstructural characterisation of polycrystalline thin film CdTe/CdS heterojunction solar cells." Thesis, University of Manchester, 1999. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.680179.
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Es'haghi, Gorji Nima <1984>. "Fabrication, Electrical Characterization and Simulation of Thin Film Solar Cells: CdTe and CIGS Materials." Doctoral thesis, Alma Mater Studiorum - Università di Bologna, 2014. http://amsdottorato.unibo.it/6244/1/PhD_thesis_NimaGorji.pdf.
Повний текст джерелаАнотація:
CdTe and Cu(In,Ga)Se2 (CIGS) thin film solar cells are fabricated, electrically characterized and modelled in this thesis. We start from the fabrication of CdTe thin film devices where the R.F. magnetron sputtering system is used to deposit the CdS/CdTe based solar cells. The chlorine post-growth treatment is modified in order to uniformly cover the cell surface and reduce the probability of pinholes and shunting pathways creation which, in turn, reduces the series resistance. The deionized water etching is proposed, for the first time, as the simplest solution to optimize the effect of shunt resistance, stability and metal-semiconductor inter-diffusion at the back contact. In continue, oxygen incorporation is proposed while CdTe layer deposition. This technique has been rarely examined through R.F sputtering deposition of such devices. The above experiments are characterized electrically and optically by current-voltage characterization, scanning electron microscopy, x-ray diffraction and optical spectroscopy. Furthermore, for the first time, the degradation rate of CdTe devices over time is numerically simulated through AMPS and SCAPS simulators. It is proposed that the instability of electrical parameters is coupled with the material properties and external stresses (bias, temperature and illumination). Then, CIGS materials are simulated and characterized by several techniques such as surface photovoltage spectroscopy is used (as a novel idea) to extract the band gap of graded band gap CIGS layers, surface or bulk defect states. The surface roughness is scanned by atomic force microscopy on nanometre scale to obtain the surface topography of the film. The modified equivalent circuits are proposed and the band gap graded profiles are simulated by AMPS simulator and several graded profiles are examined in order to optimize their thickness, grading strength and electrical parameters. Furthermore, the transport mechanisms and Auger generation phenomenon are modelled in CIGS devices.
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Es'haghi, Gorji Nima <1984>. "Fabrication, Electrical Characterization and Simulation of Thin Film Solar Cells: CdTe and CIGS Materials." Doctoral thesis, Alma Mater Studiorum - Università di Bologna, 2014. http://amsdottorato.unibo.it/6244/.
Повний текст джерелаАнотація:
CdTe and Cu(In,Ga)Se2 (CIGS) thin film solar cells are fabricated, electrically characterized and modelled in this thesis. We start from the fabrication of CdTe thin film devices where the R.F. magnetron sputtering system is used to deposit the CdS/CdTe based solar cells. The chlorine post-growth treatment is modified in order to uniformly cover the cell surface and reduce the probability of pinholes and shunting pathways creation which, in turn, reduces the series resistance. The deionized water etching is proposed, for the first time, as the simplest solution to optimize the effect of shunt resistance, stability and metal-semiconductor inter-diffusion at the back contact. In continue, oxygen incorporation is proposed while CdTe layer deposition. This technique has been rarely examined through R.F sputtering deposition of such devices. The above experiments are characterized electrically and optically by current-voltage characterization, scanning electron microscopy, x-ray diffraction and optical spectroscopy. Furthermore, for the first time, the degradation rate of CdTe devices over time is numerically simulated through AMPS and SCAPS simulators. It is proposed that the instability of electrical parameters is coupled with the material properties and external stresses (bias, temperature and illumination). Then, CIGS materials are simulated and characterized by several techniques such as surface photovoltage spectroscopy is used (as a novel idea) to extract the band gap of graded band gap CIGS layers, surface or bulk defect states. The surface roughness is scanned by atomic force microscopy on nanometre scale to obtain the surface topography of the film. The modified equivalent circuits are proposed and the band gap graded profiles are simulated by AMPS simulator and several graded profiles are examined in order to optimize their thickness, grading strength and electrical parameters. Furthermore, the transport mechanisms and Auger generation phenomenon are modelled in CIGS devices.
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Balasubramanian, Umamaheswari. "Indium oxide as a high resistivity buffer layer for CdTe/CdS thin film solar cells." [Tampa, Fla.] : University of South Florida, 2004. http://purl.fcla.edu/fcla/etd/SFE0000297.
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Barati, Alireza [Verfasser], Wolfram [Akademischer Betreuer] Jaegermann, and Lambert [Akademischer Betreuer] Alff. "Investigation of advanced back contacts for CdTe thin film solar cells / Alireza Barati ; Wolfram Jaegermann, Lambert Alff." Darmstadt : Universitäts- und Landesbibliothek, 2021. http://d-nb.info/1238231683/34.
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Khan, Imran Suhrid. "In Situ Extrinsic Doping of CdTe Thin Films for Photovoltaic Applications." Scholar Commons, 2018. http://scholarcommons.usf.edu/etd/7177.
Повний текст джерелаАнотація:
The Cadmium Telluride thin film solar cell is one of the leading photovoltaic technologies. Efficiency improvements in the past decade made it a very attractive and practical source of renewable energy. Considering the theoretical limit, there is still room for improvement, especially the cell’s open circuit voltage (VOC). To improve VOC, the p-type carrier concentration and minority carrier lifetime of the CdTe absorber needs to be improved. Both these parameters are directly related to the point defect distribution of the semiconductor, which is a function of deposition stoichiometry, dopant incorporation and post-deposition treatments.
CdTe films were deposited by the Elemental Vapor Transport (EVT) deposition method, which allowed in situ control of the vapor phase stoichiometry (Cd/Te ratio). Extrinsic doping of polycrystalline CdTe by in situ incorporation of antimony (Sb) and phosphorus (P) was investigated. The structural and electrical properties of CdTe thin films and solar cells were studied. Sb and P incorporation were found to increase the net p-doping concentration. Cl and Sb improved the minority carrier lifetime of polycrystalline CdTe, while lower lifetime with Cu and P doped films were indicated. Deep Level Transient Spectroscopy (DLTS) was performed on devices fabricated with different deposition stoichiometry, post-deposition treatments, and phosphorus dopant dose. Several majority and minority carrier traps were identified, and assigned to different point defects based on first principle studies in the literature and experimental conditions used for the deposition and processing of the thin films.
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Chen, Jianhao. "Investigation of CdS Nanowires and Planar Films for Enhanced Performance as Window Layers in CdS-CdTe Solar Cell Devices." UKnowledge, 2013. http://uknowledge.uky.edu/ece_etds/27.
Повний текст джерелаАнотація:
Cadmium sulfide (CdS) and cadmium telluride (CdTe) are two leading semiconductor materials used in the fabrication of thin film solar cells of relatively high power conversion efficiency and low manufacturing cost. In this work, CdS/CdTe solar cells with a varying set of processing parameters and device designs were fabricated and characterized for comparative evaluation. Studies were undertaken to elucidate the effects of (i) each step in fabrication and (ii) parameters like thickness, sheet resistance, light absorptivity solution concentration, inert gas pressure etc. Best results were obtained when the thickness of CdS planar film for the window layer was in the range of 150 nm to 200 nm. Also, CdS nanowires were fabricated for use as the window layer in CdS-CdTe solar cells. Their materials characteristics were studied with scanning electron microscopy (SEM) and X-ray Diffraction (XRD). Spectral absorption measurements on the planar CdS films and nanowire CdS layers were performed and results compared. It was established that the nanowire CdS design was superior because its absorption of sunlight was far less than that of planar CdS film, which would lead to enhanced performance in the CdS-CdTe solar cell through higher short circuit current density and higher open circuit voltage. Diode behavior of CdS-CdTe devices on planar CdS and nanowire CdS was analyzed and compared.
KEYWORDS: Thin Film Solar Cell, Nanowire, UV Absorption, Open-circuit Voltage, Close Space Sublimation
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Adhikari, Dipendra. "Optical and Microstructural Properties of Sputtered Thin Films for Photovoltaic Applications." University of Toledo / OhioLINK, 2019. http://rave.ohiolink.edu/etdc/view?acc_num=toledo1573118517150321.
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Stechmann, Guillaume Verfasser], Stefan [Akademischer Betreuer] Zaefferer, Dierk [Akademischer Betreuer] Raabe, and Jochen M. [Akademischer Betreuer] [Schneider. "A Study on the Microstructure Formation Mechanisms and Functional Properties of CdTe Thin Film Solar Cells Using Correlative Electron Microscopy and Atomistic Simulations / Guillaume Stechmann ; Stefan Zaefferer, Dierk Raabe, Jochen Michael Schneider." Aachen : Universitätsbibliothek der RWTH Aachen, 2017. http://d-nb.info/116249929X/34.
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Stechmann, Guillaume [Verfasser], Stefan Akademischer Betreuer] Zaefferer, Dierk [Akademischer Betreuer] Raabe, and Jochen M. [Akademischer Betreuer] [Schneider. "A Study on the Microstructure Formation Mechanisms and Functional Properties of CdTe Thin Film Solar Cells Using Correlative Electron Microscopy and Atomistic Simulations / Guillaume Stechmann ; Stefan Zaefferer, Dierk Raabe, Jochen Michael Schneider." Aachen : Universitätsbibliothek der RWTH Aachen, 2017. http://d-nb.info/116249929X/34.
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Adame, Michelle. "CdTe deposition on CdTe(211) and Si(211) substrates by the CSS technique." To access this resource online via ProQuest Dissertations and Theses @ UTEP, 2008. http://0-proquest.umi.com.lib.utep.edu/login?COPT=REJTPTU0YmImSU5UPTAmVkVSPTI=&clientId=2515.
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Rodríguez, Chávez Mario Arturo. "Fabrication and analysis of patterned and planar CdTe-based solar cells." To access this resource online via ProQuest Dissertations and Theses @ UTEP, 2008. http://0-proquest.umi.com.lib.utep.edu/login?COPT=REJTPTU0YmImSU5UPTAmVkVSPTI=&clientId=2515.
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Zoppi, Guillaume. "Studies of CdTe thin films and solar cells grown by MOCVD." Thesis, Durham University, 2005. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.418834.
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Escobedo, Arev Gabriel. "Investigation of CdTe (111) epitaxial growth via close-space sublimation." To access this resource online via ProQuest Dissertations and Theses @ UTEP, 2008. http://0-proquest.umi.com.lib.utep.edu/login?COPT=REJTPTU0YmImSU5UPTAmVkVSPTI=&clientId=2515.
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Cousins, Michael Andrew. "Microstructure of absorber layers in CdTe/Cds solar cells." Thesis, Durham University, 2001. http://etheses.dur.ac.uk/4266/.
Повний текст джерелаАнотація:
This work concerns the microstructure of CSS-grown CdTe layers used for CdTe/CdS solar cells. Particular attention is given to how the development of microstructure on annealing with CdCl(_2) may correlate with increases in efficiency. By annealing pressed pellets of bulk CdTe powder, it is shown that microstructural change does occur on heating the material, enhanced by the inclusion of CdCl(_2) flux. However, the temperature required to cause significant effects is demonstrated to be higher than that at which heavy oxidation takes place. The dynamics of this oxidation are also examined. To investigate microstructural evolution in thin-films of CdTe, bi-layers of CdTe and CdS are examined by bevelling, thus revealing the microstructure to within ~1 µm of the interface. This allows optical microscopy and subsequent image analysis of grain structure. The work shows that the grain- size, which is well described by the Rayleigh distribution, varies linearly throughout the layer, but is invariant under CdCl(_2) treatment. Electrical measurements on these bi-layers, however, showed increased efficiency, as is widely reported. This demonstrates that the efficiency of these devices is not dictated by the bulk microstructure. Further, the region within 1 µm of the interface, of similar bi-layers to above, is examined by plan-view TEM. This reveals five-fold grain-growth on CdCl(_2) treatment. Moreover, these grains show a considerably smaller grain size than expected from extrapolating the linear trend in the bulk. These observations are explained in terms of the pinning of the CdTe grain size to the underlying CdS, and the small grain size this causes. A simple model was proposed for a link between the grain-growth to the efficiency improvement. The study also examines the behaviour of defects within grains upon CdCl(_2) treatment provided the first direct evidence of recovery on CdCl(_2) treatment in this system. Finally, a computer model is presented to describe the evolution of microstructure during growth. This is shown to be capable of reproducing the observed variation in grain size, but its strict physical accuracy is questioned.
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Maniscalco, Bianca. "Microstructure and performance of CdTe solar devices." Thesis, Loughborough University, 2015. https://dspace.lboro.ac.uk/2134/16754.
Повний текст джерелаАнотація:
One of the most critical processes in CdTe device production is the activation process induced by cadmium chloride (CdCl2). In this thesis, the CdCl2 treatment has been optimized using both wet and thermal evaporation methods for close-spaced sublimated (CSS) devices. Maximum cell efficiencies of η=7.24% and η=9.37% respectively have been measured without the use of copper in the back contact. A clear link has been established between treatment conditions, electrical measurements and microstructure, where parameters such as the dwell annealing temperature for evaporated CdCl2 and the concentration of the solution for the wet treatment are varied. It has been shown that a certain concentration of chlorine is necessary to remove high densities of planar defects present in the as-deposited material. The CSS CdTe is deposited in a dual layer structure with smaller grains at the CdS interface and with larger grains developing towards the surface. The defects are initially removed in the smaller grains at the CdS interface. When the temperature and concentration increase, more grains recrystallize with the total removal of stacking faults. At a critical temperature and Cl concentration, the entire CdTe film recrystallizes into large grains with no stacking faults. The CdS grains and the interface with the CdTe also changes with sulphur migration into the CdTe. The results indicate that the recrystallization actually initiates at the CdS/CdTe junction. This has been observed clearly for both sputtered and electrodeposited CdTe. The recrystallization process gradually propagates towards the surface as the concentration of the CdCl2 solution in methanol is increased. This observation is not intuitive because the solution is initially in contact with the outer surface of the CdTe. Finally, the use of different chlorine containing compounds has been used as an alternative to CdCl2 and to further understand the role of chlorine in the process. All the samples treated with Cl containing compounds have shown the elimination of the dual layer structure and the recrystallization of the small grains at the interface. Tellurium tetrachloride (TeCl4) and zinc chloride (ZnCl2) have shown the most promising increase in conversion efficiency. The maximum efficiencies measured using these two solutions were 4.58% and 5.05% respectively. TeCl4 has shown an encouraging open circuit voltage of 594 mV, while the open circuit voltage using ZnCl2 was 494 mV. However, TeCl4 has shunting issues and low current density (17.9 mA/cm2), whereas ZnCl2 has the promising current density of 20.8 mA/cm2. This work has shown that alternatives to CdCl2 treatment exist, however further work is required to optimize the performance of these treatments to enable them to be competitive. Advanced materials characterization techniques are essential to understand and then enhance photovoltaic cell and module performance. New and improved tools are being developed to deliver fast, accurate and non-destructive characterization. One of these tools is coherence correlation interferometry (CCI) which has been developed by Taylor Hobson Ltd. This is a particular variant of scanning white light interferometry used for surface metrology with a high vertical resolution. In this thesis, it has been shown that the capability of the CCI can be extended to perform accurate thin film thickness measurements using the Helix Complex Field (HFC) function. The main attraction of this technique for thin film PV applications is that it allows surface metrology and thin film thickness measurements to be obtained simultaneously from the same area of the sample in the same system. The results obtained from CCI on a variety of materials, used in thin film PV, correlate very well the results obtained from other techniques such as ellipsometry, electron microscopy and atomic force microscopy. The CCI has also been used in the optimization of a new one-step interconnect process (OSI) for thin film PV module interconnects.
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Weerasinghe, Ajith R. "Solar cells based on electrodeposited thin films of ZnS, CdS, CdSSe and CdTe." Thesis, Sheffield Hallam University, 2013. http://shura.shu.ac.uk/20512/.
Повний текст джерелаАнотація:
The motivations of this research were to produce increased efficiency and low-cost solar cells. The production efficiency of Si solar cells has almost reached their theoretical limit, and reducing the manufacturing cost of Si solar cells is difficult to achieve due to the high-energy usage in material purifying and processing stages. Due to the low usage of materials and input energy, thin film solar cells have the potential to reduce the costs. CdS/CdTe thin film solar cells are already the cheapest on $/W basis. The cost of CdTe solar cells can be further reduced if all the semiconducting layers are fabricated using the electrodeposition (ED) method. ED method is scalable, low in the usage of energy and raw materials. These benefits lead to the cost effective production of semiconductors. The conventional method of fabricating CdS layers produces Cd containing waste solutions routinely, which adds to the cost of solar cells. ZnS, CdS and CdS(i-X)Sex buffer and window layers and CdTe absorber layers have been successfully electrodeposited and explored under this research investigation. These layers were fully characterised using complementary techniques to evaluate the material properties. Photoelectrochemical (PEC) studies, optical absorption, X-ray diffraction (XRD), X-ray fluorescence (XRF), scanning electron microscopy (SEM), energy-dispersive X-ray (EDX) spectroscopy, atomic force microscopy (AFM) and Raman spectroscopy were utilised to evaluate the material properties of these solid thin film layers. ZnS and CdS thin film layers were electrodeposited from Na-free chemical precursors to avoid the group I element (Na) to reduce deterioration of CdTe devices. Deposition parameters such as, growth substrates, temperature, pH, growth cathodic voltage, stirring rate, time and chemical concentrations were identified to fabricate the above semiconductors. To further optimise these layers, a heat treatment process specific to the material was developed. In addition, the deposition parameters of CdTe layers were further optimised. This research programme has demonstrated that electrodeposited ZnS, CdS and CdTe thin film layers have material characteristics comparable with those of the materials reported in the literature and can be used in thin film solar cell devices. Furthermore, the electrolytes were used for up to two years, reducing the wastage even further, in comparison to other fabrication methods, such as chemical bath deposition. Several large-area semiconducting layers were successfully fabricated to test the scalability of the method. Nano-rods perpendicular to the glass/FTO surface with gaps among grains in CdS layers were observed. In order to reduce the possible pinholes due the gaps, a deposition of a semiconducting layer to cover completely the substrate was investigated. CdS(i-X)Sex layers were investigated to produce a layer-by-layer deposition of the material. However it was observed the surface morphology of CdS(j.X)Sex is a function of the growth parameters which produced nano-wires, nano-tubes and nano-sheets. This is the first recording of this effect for a low temperature deposition method, minimising the cost of producing this highly photosensitive material for use in various nano technology applications.The basic structure experimented was glass/conducting-glass/buffer layer/window material/absorber material/metal. By utilising all the semiconducting layers developed, several solar cell device structures were designed, fabricated and tested. This included a novel all-electrodeposited multi-layer graded bandgap device, to enhance the absorption of solar photons. The device efficiencies varied from batch to batch, and efficiencies in the range (3-7)% were observed. The variations in chemical concentrations, surface states and the presence of pin-hole defects in CdS were the main reasons for the range of efficiencies obtained. In the future work section, ways to avoid these variations and to increase efficiencies are identified and presented.
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Jayabal, Matheshkumar. "Molybdenum as a back contact for cucl treated cds/cdte solar cells." Scholar Commons, 2005. http://scholarcommons.usf.edu/etd/2937.
Повний текст джерелаАнотація:
CdTe is one of the most promising absorbers for use in inexpensive semiconductor solar cells having achieved a high efficiency of 16.4% in small area cells [1]. One of the most important technological problems in obtaining high efficiencies is to have a good ohmic contact on the CdTe, which is characterized by a very high work function [2]. Cu is used as a dopant in CdTe at the contact to promote quantum mechanical tunneling [3]. But the oversupply of Cu causes the diffusion of Cu through CdTe to the underlying CdS layer resulting in the degradation of the cell performance. It has been reported that Cu was segregated near the CdS/CdTe junction. To avoid the Cu segregation at the junction, Cu supply should be minimized while the ohmic characteristics of p-CdTe contact are maintained [4]. In this thesis, the main objective is to understand the role of Cu at the CdS/CdTe interface. Here the Cu is added at the CdS/CdTe interface and is avoided at the back contact.
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Gayam, Sudhakar R. "High resistivity zinc stannate as a buffer layer in cds/cdte solar cells." [Tampa, Fla.] : University of South Florida, 2005. http://purl.fcla.edu/fcla/etd/SFE0001061.
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Chang, Shang-wen. "Cu₂S/ZnCdS thin film heterojunction solar cell studies." Diss., Virginia Polytechnic Institute and State University, 1985. http://hdl.handle.net/10919/54740.
Повний текст джерелаАнотація:
Cu₂S/CdS solar cells have been studied extensively for the past two decades due to their potentially high efficiencies per unit cost. The operation and characteristics of Cu₂S/CdS solar cells are fairly well understood. However, the properties of the newer Cu₂S/ZnCdS cell type are not well understood.
The main goals of this thesis were to compare Cu₂S/CdS and Cu₂S/ZnCdS cells using Cu₂S/CdS cells as a reference, and to understand the operation and properties of Cu₂S/ZnCdS cells in order to improve cell performance. Four different measurements were used in this research to achieve these goals. They were; electrical, spectral, capacitance and deep trap measurements.
I-V measurements give important electrical parameters of the cells; cell efficiency, fill factor, short circuit current, open circuit voltage, shunt resistance and series resistance are reported. From a In(ISC) versus VOC measurement, the diode factor, A, was found to be about 1 for Cu₂S/CdS, Cu₂S/Zn0.11Cd0.89S, and about 1.2 for Cu₂S/Zn0.25Cd0.75S cells. The relation between In(Joo) (current density) and ϕ (potential barrier height) is linear for both types of cells. The slope of this linear relationship increases as the content of Zn increases in ZnxCd1-xS. Under air mass 1 (100 mW/cm²) illumination, it was found that VOC decays and capacitance increases for Cu₂S/ZnCdS cells. This is attributed to electron relaxation from deep traps near the junction.
Spectral response with and without bias light were measured for both Cu₂S/CdS and Cu₂S/ZnCdS cells. White and blue bias light enhance the spectral response, while red bias light quenches the response. This is attributed to ionization and filling of deep traps near the junction.
Capacitance measurements on both cell types show that 1/C² versus voltage is quite flat, which indicates the existence of an i-layer (insulation layer) in the CdS or ZnCdS near the junction.
Three methods–photocapacitance, space-charge-limited current, and thermally stimulated. current techniques–were used for deep trap measurements. Photocapacitance measurements indicate one deep donor energy and two deep acceptor energy levels. These trap energies become larger as the content of Zn in ZnCdS increases. Space-charge-limited current measurements give a trap density of the order of 10¹⁶ cm³ for both cell types. The shallow energy trap is found to be 0.26 eV below the conduction band edge of CdS. The occurrence of a current-saturated region for Cu₂S/ZnCdS is attributed to the filling of the interface traps near the junction. Thermally stimulated current measurements give two energy levels below the conduction band of CdS; 0.05 eV and 0.26 eV.
From the above results, several differences between the Cu₂S/CdS and the Cu₂S/ZnCdS cells can be seen. The Cu₂S/ZnCdS cells show stronger red quenching, smaller electron lifetime at the interface near the junction, and deeper traps than the Cu₂S/CdS cells. These differences can account for the decline of ISC and the VOC decay. The smaller ISC for the Cu₂S/ZnCdS cells can also possibly result from smaller electron lifetime at the interface, larger interface recombination velocity, different deep trap levels, and enhanced Zn concentration near the junction. The VOC decay for the Cu₂S/ZnCdS cells is mostly due to long decay of charge. Longer decay could be attributed to deeper traps.Ph. D.
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Al-Dhafiri, Abdullah M. "CdS-CuₓS single crystal and thin film solar cells". Thesis, Durham University, 1988. http://etheses.dur.ac.uk/6617/.
Повний текст джерелаАнотація:
The work presented in this thesis is concerned with photovoltaic cells formed by plating CdS single crystals and thin films, and Cd(_y) Zn(1 _ y)S single crystals, with copper sulphide. An electroplating technique has been used to control the phase of copper sulphide by changing the electric field during its formation. Different phases of Cu(_x)S have been identified directly using Reflection High Energy Diffraction (RHEED), and indirectly from spectral response measurements. A dramatic change in the spectral response accompanying the reduction in the covellite response associated with an increase in that from chalcocite following argon heat treatment has been achieved. The change from the djurleite phase to that of chalcocite has also been obtained by using argon heat treatment for 5 minutes at 200 C. This effect was found to be reversible in that layers of chalcocite were converted to djurleite when air was used as the ambient for the heat treatment. C-V measurements have demonstrated that with increasing plating bias the donor concentration decreases at first before it assumes a constant value. This led to the effect of decreasing the junction capacitance as the width of the depletion region changed. The problem of the stability of the CdS-Cu(_2)S photovoltaic devices formed by wet plating" is addressed by studying the combined effects of the substrate onto which the CdS is deposited and the ambient used during annealing. Thin film cells have been prepared on both Ag/Cr and SnO substrates, and the device characteristics for each have been investigated as a function of annealing ambient. The results have shown that devices formed on Ag/Cr substrates were more stable following annealing in air than in argon, while the converse was true for cells fabricated on SnO(_x) substrates. The degradation effects of CdS-Cu(_2) S photovoltaic cells have been investigated. While devices stored in the dark showed little or no degradation, those maintained under illumination exhibited a significant deterioration in all operational parameters over a four week period. As far as the combined effect of temperature and ambient on the stability of cells are concerned, it was found that the ageing of devices in argon at room temperature in the dark was negligible, and moreover the fill factor was observed to improve marginally. When the devices were stored in the same ambient conditions at 50 C, they showed a significant improvement in the fill factor, but simultaneously exhibited a considerable reduction in the short circuit current. This process was reversible, since the sensitivity of degraded devices could be restored by annealing them in a hydrogen/nitrogen mixture. By comparing Electron Spectroscopy for Chemical Analysis (ESCA) studies with solar cell device characteristics, it has been shown that the formation of copper oxide on the Cu(_2)S surface plays a significant role in the degradation of CdS-Cu(_2) S devices. The extent of the cross-over between the dark and light J-V characteristics is a function of the period of etching used prior to junction formation. The variation of current and diode factor has been established as a function of the bias value. The dependence of forward current on the temperature at fixed forward voltage has also been investigated. Finally this work has shown that an increase in V(_oc) can be achieved when Cd(_0◦8)Zn(_0◦2)S is used as a base material for solar cells instead of CdS. Different traps were identified through a photocapacitance investigation. An important trap was found at 0.78eV below the conduction band. It has been demonstrated that the effect of this level was found to be diminished much more slowly when the annealing was carried out in argon rather than in air. This level may play an important role in the Cd(0◦8) Zn(0◦2)S-Cu(_2)S solar cell properties.
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Sapori, Daniel. "Hybrid Perovskites : Fundamental properties and solar cell thin film technology." Thesis, Rennes, INSA, 2018. http://www.theses.fr/2018ISAR0017.
Повний текст джерелаАнотація:
Dès à présent, le monde est face à des enjeux majeurs : augmentation de la production d'énergie, réduction des impacts de la production et de la consommation d'énergie sur l'environnement. La transition vers des énergies durables a déjà commencé. Le photovoltaïque a sa place parmi les énergies renouvelables qui permettront de relever ce défi. Ce travail de thèse porte sur les pérovskites hybrides halogénées et plus particulièrement leur utilisation dans des cellules solaires. En effet très récemment, ces matériaux ont attiré l'attention de la communauté scientifique en raison de leurs propriétés optoélectroniques remarquables : bande interdite directe, forte absorption de la lumière, longueurs importantes de diffusion des porteurs, propriétés optoélectroniques accordables mais aussi une fabrication aisée et à bas coût. En quelques années, le rendement a connu une augmentation spectaculaire de 3,8 % en 2009 à 22,7 % en 2017. Ainsi, ces derniers résultats placent les cellules pérovskites comme des concurrents potentiels face aux cellules solaires à base de silicium cristallin qui représentent aujourd'hui 90 % des cellules en service. Dans la conception des cellules solaires à base de pérovskite, la couche de pérovskite est généralement intercalée entre deux couches de transporteurs de charges : les couches de transporteurs d'électron et de trou (ETM et HTM, respectivement). La qualité de ces couches est essentielle pour obtenir de hauts rendements. Dans ce travail, les propriétés optoélectroniques des pérovskites halogénées sont étudiées ainsi que plusieurs couches de transport de chargeIn the future, the world has to face up to major challenges: increasing the energy production, reducing the environmental impact, moving towards sustainability in energy, etc. Renewable energies such as photovoltaics can meet these challenges. This thesis concerns hybrid halide perovskite materials and their use in solar cells. These materials have recently attracted a lot of attention owing to their direct bandgaps, strong light absorption, large carrier diffusion lengths, tunable optoelectronic properties, and their facile and low-cost fabrication In few years, their energy conversion efficiency has rapidly increased from 3.8 % in 2009 to 22.7 % in 2017, hence approaching efficiencies of crystalline silicon based-devices which represent 90% of commercial photovoltaic cells. In the design of perovskite cells, the perovskite photoabsorber is generally sandwiched by two interfacial layers that yield selective charge collections: the hole and electron transport layers (HTM and ETM). Good quality and adapted interfacial layers are required to obtained high efficiency cells. In this thesis, both the perovskite material and the interfacial layers are investigated
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Chen, Jian-hong, and 陳建鴻. "Fabrication of high efficiency CdTe thin film solar cell." Thesis, 2010. http://ndltd.ncl.edu.tw/handle/84768044602651626194.
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Huang, Yein-rein, and 黃彥睿. "Development of high efficieny CdTe thin-film solar cell." Thesis, 2011. http://ndltd.ncl.edu.tw/handle/76361567313336587383.
Повний текст джерелаАнотація:
碩士國立中山大學
材料與光電科學學系研究所
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CdTe films were deposited by sputtering technique and were then carried out by CdCl2 treatment. The SEM micrographs show that the grain sizes of the as-deposited CdTe film were normally ranged from 50 nm to 100 nm, and they were recrystallized after CdCl2 treatment to obtain the grain sizes in the range of 1~3 μm. A new device structure for CdTe thin-film solar cells has been proposed to exceed the cell efficiency of current record. The superstrate structure with the layer sequence of Glass/AZO/ZnO/CdS/CdTe/CI(G)S/Mo compared with the conventional device structure of Glass/FTO/CdS/CdTe/metal contact would have the following advantages:(1) a highly conductive AZO layer combined with a thin undoped ZnO layer will have higher optical transmission than that of FTO; (2) the use of p-type CIS under the CdTe layer with the same conductivity type can extend the light absorption to longer wavelength range (the band gaps of CdTe and CIS are 1.45eV and 1.04eV, respectively); (3) the proper addition of Ga to CIS may form CIGS quaternary compounds with a bandgap gradient which produce an electric field in the neutral region of a p-n junction to reduce the carrier recombination; (4) the use of Mo contact to CI(G)S is quite stable as compared with the metal contact normally used for p-CdTe. AMPS-1D simulation had been applied to evaluate the newly designed device structure and the results indicated a great improvement in device performance, i.e. the cell efficiency could exceed 20%. The I-V curve of a CdTe solar cell using the new device structure showed a nearly linear characteristic indicating the failure to form a p-n junction. We speculated that Cu might diffuse through the CdTe layer to the depletion region of the p-n junction formed at the CdS/CdTe interface. This would cause the junction failure. Based on the calculation on the Cu diffusion during the deposition of CIS layer at different temperatures even as low as 150˚C, it always had the chance to diffuse through the CdTe layer. An alternate device fabrication process was the use of the substrate structure for preparing CdTe solar cells, i.e. Glass/Mo/CIS/CdTe/CdS/ZnO/AZO/Al. However, the desired diode behavior was not observed until the thickness of CdTe layer was cut down to 10 nm. The electrical properties of that particular solar cell is the following:Voc=0.36V, Isc=4.991mA/cm2, F.F.=25.3%, efficiency=0.472%. It is probably that the lattice mismatch between CIS and CdTe is large that may cause the formation of interfacial defects and the reduction of photo excited carriers through the recombination processes. The annealing processes had been conducted in order to promote the interdiffusion between CdTe and CIS and minimize the lattice mismatch. However, the films peered off after annealing. Further experiments should be done to solve this problem.