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Добірка наукової літератури з теми "CdTe, thin film, solar cell"

Автор: Grafiati
Опубліковано: 11 березня 2023

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Статті в журналах з теми "CdTe, thin film, solar cell"

1

Ibrahim, M., P. Chelvanathan, M. H. Miraz, H. I. Alkhammash, A. K. M. Hasan, Md Akhtaruzzaman, K. Althubeiti, Md Shahiduzzaman, K. Sobayel, and N. Kamal. "Comprehensive study on CdSe thin film as potential window layer on CdTe solar cell by SCAPD-1D." Chalcogenide Letters 19, no. 1 (January 2022): 33–43. http://dx.doi.org/10.15251/cl.2022.191.33.

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Анотація:
Photovoltaics significantly contributes towards the emerging renewable energy drive. Amongst the available thin film solar cell technologies, presently CdTe is leading at commercial state. CdS is being widely used as window layer in CdTe solar cell but challenged with toxicity. Therefore, this project explores the feasibility of CdSe as alternative window layer in CdTe solar cell. The CdSe is optimized to determine the best complete CdTe based solar cell. The study also compares the device performance of proposed CdSe/CdTeSe/CdTe solar cell with other reported CdSe/CdTe and CdS/CdSe solar cells. While degerming the optimized thickness of CdTe solar cell with respect to different prospective window layer materials, the simulation results reveal that CdTe thickness can significantly reduce, at least by 500 nm, with only 1% reduction in PCE by replacing conventional CdS window layer with CdSe layer. Furthermore, while determining the appropriate Se composition on CdSexTe1-x as this layer forms between CdTe and CdSe layer during the fabrication, it has been found that 18% efficiency can be obtained in CdTe solar cell if the stoichiometry of CdSexTe1-x can be maintained as CdSe0.3Te0.7 during the device fabrication.
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2

Lingg, Buecheler, and Tiwari. "Review of CdTe1−xSex Thin Films in Solar Cell Applications." Coatings 9, no. 8 (August 15, 2019): 520. http://dx.doi.org/10.3390/coatings9080520.

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Анотація:
Recent improvements in CdTe thin film solar cells have been achieved by using CdTe1−xSex as a part of the absorber layer. This review summarizes the published literature concerning the material properties of CdTe1−xSex and its application in current thin film CdTe photovoltaics. One of the important properties of CdTe1−xSex is its band gap bowing, which facilitates a lowering of the CdTe band gap towards the optimum band gap for highest theoretical efficiency. In practice, a CdTe1−xSex gradient is introduced to the front of CdTe, which induces a band gap gradient and allows for the fabrication of solar cells with enhanced short-circuit current while maintaining a high open-circuit voltage. In some device structures, the addition of CdTe1−xSex also allows for a reduction in CdS thickness or its complete elimination, reducing parasitic absorption of low wavelength photons.
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3

Suntola, T. "CdTe Thin-Film Solar Cells." MRS Bulletin 18, no. 10 (October 1993): 45–47. http://dx.doi.org/10.1557/s088376940003829x.

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Анотація:
Cadmium telluride is currently the most promising material for high efficiency, low-cost thin-film solar cells. Cadmium telluride is a compound semiconductor with an ideal 1.45 eV bandgap for direct light-to-electricity conversion. The light absorption coefficient of CdTe is high enough to make a one-micrometer-thick layer of material absorb over 99% of the visible light. Processing homogenous polycrystalline thin films seems to be less critical for CdTe than for many other compound semiconductors. The best small-area CdTe thin-film cells manufactured show more than 15% conversion efficiency. Large-area modules with aperture efficiencies in excess of 10% have also been demonstrated. The long-term stability of CdTe solar cell structures is not known in detail or in the necessary time span. Indication of good stability has been demonstrated. One of the concerns about CdTe solar cells is the presence of cadmium which is an environmentally hazardous material.
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4

Mazur, T. M., V. V. Prokopiv, M. P. Mazur, and U. M. Pysklynets. "Solar cells based on CdTe thin films." Physics and Chemistry of Solid State 22, no. 4 (December 30, 2021): 817–27. http://dx.doi.org/10.15330/pcss.22.4.817-827.

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Анотація:
An analysis of the use of semiconductor solar cells based on thin-film cadmium telluride (CdTe) in power engineering is carried out. It is shown that the advantages of thin-film technology and CdTe itself as a direct-gap semiconductor open up the prospect of large-scale production of competitive CdTe solar modules. The physical and technical problems of increasing the efficiency of CdS/CdTe heterostructure solar cells, which are significantly inferior to the theoretically possible value in mass production, are discussed. The state of CdTe thin-film solar cells, which make CdTe a suitable material for ground-based photoelectric conversion of solar energy, the historical development of the CdTe compound, the application of CdTe thin films, the main methods and strategies of device production, device analysis and fundamental problems related to the future development of thin-film modules based on cadmium telluride.
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5

Chen, Yanru, Xianglin Mei, Xiaolin Liu, Bin Wu, Junfeng Yang, Junyu Yang, Wei Xu, Lintao Hou, Donghuan Qin, and Dan Wang. "Solution-Processed CdTe Thin-Film Solar Cells Using ZnSe Nanocrystal as a Buffer Layer." Applied Sciences 8, no. 7 (July 21, 2018): 1195. http://dx.doi.org/10.3390/app8071195.

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Анотація:
The CdTe nanocrystal (NC) is an outstanding, low-cost photovoltaic material for highly efficient solution-processed thin-film solar cells. Currently, most CdTe NC thin-film solar cells are based on CdSe, ZnO, or CdS buffer layers. In this study, a wide bandgap and Cd-free ZnSe NC is introduced for the first time as the buffer layer for all solution-processed CdTe/ZnSe NC hetero-junction thin-film solar cells with a configuration of ITO/ZnO/ZnSe/CdTe/MoOx/Au. The dependence of the thickness of the ZnSe NC film, the annealing temperature and the chemical treatment on the performance of NC solar cells are investigated and discussed in detail. We further develop a ligand-exchanging strategy that involves 1,2-ethanedithiol (EDT) during the fabrication of ZnSe NC film. An improved power conversion efficiency (PCE) of 3.58% is obtained, which is increased by 16.6% when compared to a device without the EDT treatment. We believe that using ZnSe NC as the buffer layer holds the potential for developing high-efficiency, low cost, and stable CdTe NC-based solar cells.
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6

Chen, Bingchang, Junhong Liu, Zexin Cai, Ao Xu, Xiaolin Liu, Zhitao Rong, Donghuan Qin, Wei Xu, Lintao Hou, and Quanbin Liang. "The Effects of ZnTe:Cu Back Contact on the Performance of CdTe Nanocrystal Solar Cells with Inverted Structure." Nanomaterials 9, no. 4 (April 17, 2019): 626. http://dx.doi.org/10.3390/nano9040626.

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Анотація:
CdTe nanocrystal (NC) solar cells have received much attention in recent years due to their low cost and environmentally friendly fabrication process. Nowadays, the back contact is still the key issue for further improving device performance. It is well known that, in the case of CdTe thin-film solar cells prepared with the close-spaced sublimation (CSS) method, Cu-doped CdTe can drastically decrease the series resistance of CdTe solar cells and result in high device performance. However, there are still few reports on solution-processed CdTe NC solar cells with Cu-doped back contact. In this work, ZnTe:Cu or Cu:Au back contact layer (buffer layer) was deposited on the CdTe NC thin film by thermal evaporation and devices with inverted structure of ITO/ZnO/CdSe/CdTe/ZnTe:Cu (or Cu)/Au were fabricated and investigated. It was found that, comparing to an Au or Cu:Au device, the incorporation of ZnTe:Cu as a back contact layer can improve the open circuit voltage (Voc) and fill factor (FF) due to an optimized band alignment, which results in enhanced power conversion efficiency (PCE). By carefully optimizing the treatment of the ZnTe:Cu film (altering the film thickness and annealing temperature), an excellent PCE of 6.38% was obtained, which showed a 21.06% improvement compared with a device without ZnTe:Cu layer (with a device structure of ITO/ZnO/CdSe/CdTe/Au).
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7

Thivakarasarma, Thuraisamykurukkal, Adikari Arachchige Isuru Lakmal, Buddhika Senarath Dassanayake, Dhayalan Velauthapillai, and Punniamoorthy Ravirajan. "Thermally Evaporated Copper Iodide Hole-Transporter for Stable CdS/CdTe Thin-Film Solar Cells." Nanomaterials 12, no. 14 (July 21, 2022): 2507. http://dx.doi.org/10.3390/nano12142507.

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Анотація:
This study focuses on fabricating efficient CdS/CdTe thin-film solar cells with thermally evaporated cuprous iodide (CuI) as hole-transporting material (HTM) by replacing Cu back contact in conventional CdS/CdTe solar cells to avoid Cu diffusion. In this study, a simple thermal evaporation method was used for the CuI deposition. The current-voltage characteristic of devices with CuI films of thickness 5 nm to 30 nm was examined under illuminations of 100 mW/cm2 (1 sun) with an Air Mass (AM) of 1.5 filter. A CdS/CdTe solar cell device with thermally evaporated CuI/Au showed power conversion efficiency (PCE) of 6.92% with JSC, VOC, and FF of 21.98 mA/cm2, 0.64 V, and 0.49 under optimized fabrication conditions. Moreover, stability studies show that fabricated CdS/CdTe thin-film solar cells with CuI hole-transporters have better stability than CdS/CdTe thin-film solar cells with Cu/Au back contacts. The significant increase in FF and, hence, PCE, and the stability of CdS/CdTe solar cells with CuI, reveals that Cu diffusion could be avoided by replacing Cu with CuI, which provides good band alignment with CdTe, as confirmed by XPS. Such an electronic band structure alignment allows smooth hole transport from CdTe to CuI, which acts as an electron reflector. Hence, CuI is a promising alternative stable hole-transporter for CdS/CdTe thin-film solar cells that increases the PCE and stability.
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8

Jones, K. M., F. S. Hasoon, A. B. Swartzlander, M. M. Al-Jassim, T. L. Chu, and S. S. Chu. "The morphology and microstructure of polycrystalline CdTe thin films for solar cell applications." Proceedings, annual meeting, Electron Microscopy Society of America 50, no. 2 (August 1992): 1384–85. http://dx.doi.org/10.1017/s0424820100131553.

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Анотація:
Polycrystalline thin films of II-VI semiconductors on foreign polycrystalline (or amorphous) substrates have many applications in optoelectronic devices. In contrast to the extensive studies of the heteroepitaxial growth of compound semiconductors on single-crystal substrates, the nucleation and growth of thin films of II-VI compounds on foreign substrates have received little attention, and the properties of these films are often controlled empirically to optimize device performance. A better understanding of the nucleation, growth, and microstructure will facilitate a better control of the structural and electrical properties of polycrystalline semiconductor films, thereby improving the device characteristics. Cadmium telluride (CdTe) has long been recognized as a promising thin-film photovoltaic material. Under NREL's sponsorship, the University of South Florida has recently developed a record high efficiency (14.6% under global AM1.5 conditions) thin-film CdS/CdTe heterojunction solar cell for potential low-cost photovoltaic applications. The solar cell has the structure:glass (substrate)/SnO2:F/CdS/CdTe/HgTe (contact)The CdS films were grown from an aqueous solution, while the CdTe films were deposited by the closespaced sublimation method.
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9

Chowdhury, RI, MS Islam, F. Sabeth, G. Mustafa, SFU Farhad, DK Saha, FA Chowdhury, S. Hussain, and ABMO Islam. "Characterization of Electrodeposited Cadmium Selenide Thin Films." Dhaka University Journal of Science 60, no. 1 (April 15, 2012): 137–40. http://dx.doi.org/10.3329/dujs.v60i1.10352.

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Анотація:
Cadmium selenide (CdSe) thin films have been deposited on glass/conducting glass substrates using low-cost electrodeposition method. X-ray diffraction (XRD) technique has been used to identify the phases present in the deposited films and observed that the deposited films are mainly consisting of CdSe phases. The photoelectrochemical (PEC) cell measurements indicate that the CdSe films are n-type in electrical conduction, and optical absorption measurements show that the bandgap for as-deposited film is estimated to be 2.1 eV. Upon heat treatment at 723 K for 30 min in air the band gap of CdSe film is decreased to 1.8 eV. The surface morphology of the deposited films has been characterized using scanning electron microscopy (SEM) and observed that very homogeneous and uniform CdSe film is grown onto FTO/glass substrate. The aim of this work is to use n-type CdSe window materials in CdTe based solar cell structures. The results will be presented in this paper in the light of observed data.DOI: http://dx.doi.org/10.3329/dujs.v60i1.10352 Dhaka Univ. J. Sci. 60(1): 137-140 2012 (January)
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10

Alamri, Saleh N., M. S. Benghanem, and A. A. Joraid. "Preparation of the Three Main Layers of CdS/CdTe Thin Film Solar Cells Using a Single Vacuum System." Advanced Materials Research 378-379 (October 2011): 601–5. http://dx.doi.org/10.4028/www.scientific.net/amr.378-379.601.

Повний текст джерела
Анотація:
This study investigates the preparation of the three main layers of a CdS/CdTe thin film solar cell using a single vacuum system. A Close Space Sublimation System was constructed to deposit CdS, CdTe and CdCl2 solar cell layers. Two hot plates were used to heat the source and the substrate. Three fused silica melting dishes were used as containers for the sources. The properties of the deposited CdS and CdTe films were determined via Atomic force microscopy, scanning electron microscopy, X-ray diffraction and optical transmission spectroscopy. An J-V characterization of the fabricated CdS/CdTe solar cells was performed under solar radiation. The short-circuit current density, Jsc, the open-circuit voltage, Voc, fill factor, FF and conversion efficiency, η, were measured and yielded values of 27 mA/cm2, 0.619 V, 58% and 9.8%, respectively.
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Більше джерел

Дисертації з теми "CdTe, thin film, solar cell"

1

Desai, Darshini. "Electrical characterization of thin film CdTe solar cells." Access to citation, abstract and download form provided by ProQuest Information and Learning Company; downloadable PDF file, 320 p, 2007. http://proquest.umi.com/pqdweb?did=1257806491&sid=6&Fmt=2&clientId=8331&RQT=309&VName=PQD.

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2

Muthuswamy, Gokul. "Numerical modeling of CdS/CdTe thin film solar cell using MEDICI." [Tampa, Fla.] : University of South Florida, 2005. http://purl.fcla.edu/fcla/etd/SFE0001360.

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3

Sugimoto, Yoshiharu. "Studies of CdTe electrodeposition." Thesis, University of Southampton, 1993. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.241263.

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4

Tetali, Bhaskar Reddy. "Stability studies of CdTe/CdS thin film solar cells." [Tampa, Fla.] : University of South Florida, 2005. http://purl.fcla.edu/fcla/etd/SFE0001135.

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5

Hsu, Chih-An. "Absorber and Window Study – CdSexTe1-x/CdTe Thin Film Solar Cells." Scholar Commons, 2019. https://scholarcommons.usf.edu/etd/7813.

Повний текст джерела
Анотація:
CdTe an II-VI semiconductor has been a leading thin film photovoltaic material due to its near ideal bandgap and high absorption coefficient [1]. The typical thin film CdTe solar cells have been of the superstrate configuration with CdS (Eg-2.42eV) as the n-type heterojunction partner. Due to the relatively narrow bandgap of CdS, a wider bandgap n-type window layer has recently emerged as a promising substitute: alloys of MgyZn1-yO have been successfully used as the emitter or window layer. The benefits in the usage of MgyZn1-yO (MZO) are its tunable bandgap and wide optical spectrum on optoelectronic devices. Due to an increasing bandgap of the window layer, the carrier collection can be improved in the short wavelength range (<500 nm). In addition alloys of CdSexTe1-x (CST) have also been used in the absorber layer (i.e., CST/CdTe) for the fabrication of CdTe devices to improve the carrier collection and lifetime [2]. The lower bandgap of the CST alloy can lead to higher short-circuit current (JSC), but it can also result in lower open circuit voltage (VOC). Another critical aspect of the CdTe solar cell is the use of copper as a p-type dopant, which is typically incorporated in the cell during the fabrication of the back contact. The most challenging issue related to further advancing the CdTe solar cell efficiency is the relatively low level of p-type doping, which limits the VOC. Efforts to dope CdTe with group V dopants are yet to produce the desired results. ZnO has been used as an effective high resistivity transparent. When CdTe is deposited directly on sputtered ZnO, VOC of typically 500-600 mV is produced. Band alignment measurements indicate that a negative conduction band offset with CdS exists; alloying with MgO to produce MgyZn1-yO with a composition of y = 0.15 can produce a flat conduction band alignment with CdS. This material has an additional benefit for improving the energy bandgap of the MZO for better UV light transmission in the short wavelengths. By changing the magnesium content from y = 0 to 0.30 allowed researchers to make the tunable conduction band offset from a “cliff” to a “spike,” with both increased open-circuit voltage and fill factor as increasing magnesium compositions [3] — the bandgap gains as expected with increased magnesium composition. The large compositions (y > 0.30) of MgyZn1-yO cause the enormous spike result in S-kink in the IV measurement so that the FF decreases. Besides, due to the instability of MZO material, the fabrication process has to proceed carefully. The properties of CST films and cells were investigated as a function of Se composition (x), substrate temperature (TSUB), and ambient used during the CSS deposition. The higher ratio of Se in CST alloy causes the smaller grain structures and lower bandgap, which profoundly detrimental to the device performance (VOC). However, the CST can be deposited in various substrate temperatures and different inert ambient gas to improve the grain structure by utilizing the especial Close Space Sublimation (CSS) deposition system. Therefore, despite the fact that the CST (25% Se) has the optical bandgap (1.37eV), the improvement of grain structure can slightly increase the doping concentration and decrease the grain boundary (GBs) due to increased alloys grain size 3X larger, which is contributed to improving the VOC [4]. The study of higher ratio Se of CST alloy is significant to achieve the high efficiency polycrystalline CST/CdTe photovoltaic devices. The effect of Cu doping back contact in CdSexTe1-x (CST)/CdTe solar cells with varying amounts of Se (x) has been investigated. The Cu-based back contact was annealed at different thermal temperatures in order to vary the amount of Cu in-diffusion. Net p-type doping was found to increase as the back-contact annealing temperature increased. All cells exhibited a decrease in VOC with increased annealing temperature (i.e., higher Cu concertation), presumably due to a degradation of the lifetime with increased amounts of Cu [5]. However, cells with the highest Se composition appeared to exhibit a higher degree of tolerance to the amount of Cu – i.e., they exhibited a smaller loss in VOC with the increased amount of Cu. Extrinsic p-type doping of CdSeTe can be fabricated using two different experimental processes. Firstly, by using group I elements such as, Cu to substitute Cd, which is promising during the back contact process. Secondly, using group V (P, As, Sb) elements to substitute Te, and this is suitable for Cd-rich of intrinsic CdTe. Intrinsic CST alloy has lower hole density concentration as higher Se composition with limitation of the VOC. Thus, in order to increase the p-type net doping up to 1016 cm-3 the extrinsic P or As doping have been widely investigated recently. The research studies show the CST/CdTe devices lead to improve VOC up to 850 mV with higher hole density in higher Se compositions of As doped CST alloys. Nevertheless, the group V doped CdTe still cause the formation of compensating defects limits the upper boundary of dupability on the CdTe thin film solar cells. Even if a high hole density concentration is achieved for intrinsically-doped p-type CST/CdTe, it is believed the poor carrier lifetime in the CdTe side would still limit the VOC.
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6

Palekis, Vasilios. "CdTe/CdS Thin Film Solar Cells Fabricated on Flexible Substrates." Scholar Commons, 2011. http://scholarcommons.usf.edu/etd/3280.

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Анотація:
Cadmium Telluride (CdTe) is a leading thin film photovoltaic (PV) material due to its near ideal bandgap of 1.45 eV and its high optical absorption coefficient. The typical CdTe thin film solar cell is of the superstrate configuration where a window layer (CdS), the absorber (CdTe) and a back contact are deposited onto glass coated with a transparent electrode. Substrate CdTe solar cells where the above listed films are deposited in reverse are not common. In this study substrate CdTe solar cells are fabricated on flexible foils. The properties of the Molybdenum back contact, Zinc Telluride (ZnTe) interlayer and CdTe absorber on the flexible foils were studied and characterized using X-Ray Diffraction (XRD), and Scanning Electron Microscopy (SEM). Substrate curvature and film flaking was observed during the fabrication as a result of differences in thermal expansion coefficients between the substrate and the deposited films, and also due to impurity diffusion from the foil into the film stack. In order to overcome this problem diffusion barriers where used to eliminate contamination. Silicon dioxide (SiO2), silicon nitride (Si3N4) and molybdenum nitride (MoxNy) were used as such barriers. Electrical characterization of completed devices was carried out by Current-Voltage (J-V), Capacitance-Voltage (C-V) and Spectral Response (SR) measurements. Roll-over was observed in the first quadrant of J-V curves indicating the existence of a back barrier due to a Schottky back contact. The formation of non-rectifying contact to p-CdTe thin-film is one of the major and critical challenges associated with the fabrication of efficient and stable solar cells. Several materials (ZnTe, Cu, Cu2Te, and Te) were studied as potential candidates for the formation of an effective back contact.
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7

Lisco, Fabiana. "High rate deposition processes for thin film CdTe solar cells." Thesis, Loughborough University, 2015. https://dspace.lboro.ac.uk/2134/17965.

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Анотація:
This thesis describes the development of a fast rate method for the deposition of high quality CdS and CdTe thin films. The technique uses Pulsed DC Magnetron Sputtering (PDCMS). Surprisingly, the technique produces highly stable process conditions. CREST is the first laboratory worldwide to show that pulsed DC power may be used to deposit CdS and CdTe thin films. This is a very promising process technology with potential for eventual industrial deployment. The major advantage is that the process produces high deposition rates suitable for use in solar module manufacturing. These rates are over an order of magnitude faster than those obtained by RF sputtering. In common with other applications it has also been found that the energetics of the pulsed DC process produce excellent thin film properties and the power supply configuration avoids the need for complex matching circuits. Conventional deposition methodologies for CdS, Chemical Bath Deposition (CBD) and CdTe thin films, Electrodeposition (ED), have been chosen as baselines to compare film properties with Pulsed DC Magnetron Sputtering (PDCMS). One of the issues encountered with the deposition of CdS thin films (window layers) was the presence of pinholes. A Plasma cleaning process of FTO-coated glass prior to the deposition of the CdS/CdTe solar cell has been developed. It strongly modifies and activates the TCO surface, and improves the density and compactness of the deposited CdS thin film. This, in turn, improves the optical and morphological properties of the deposited CdS thin films, resulting in a higher refractive index. The pinhole removal and the increased density allows the use of a much thinner CdS layer, and this reduces absorption of blue spectrum photons and thereby increases the photocurrent and the efficiency of the thin film CdTe cell. Replacing the conventional magnetic stirrer with an ultrasonic probe in the chemical bath (sonoCBD) was found to result in CdS films with higher optical density, higher refractive index, pinhole and void-free, more compact and uniform along the surface and through the thickness of the deposited material. PDCMS at 150 kHz, 500 W, 2.5 μs, 2 s, results in a highly stable process with no plasma arcing. It allows close control of film thickness using time only. The CdS films exhibited a high level of texture in the <001> direction. The grain size was typically ~50 nm. Pinholes and voids could be avoided by reducing the working gas pressure using gas flows ii below 20 sccm. The deposition rate was measured to be 1.33 nm/s on a rotating substrate holder. The equivalent deposition rate for a static substrate is 8.66 nm/s, which is high and much faster than can be achieved using a chemical bath deposition or RF magnetron sputtering. The transmission of CdS can be improved by engineering the band gap of the CdS layer. It has been shown that by adding oxygen to the working gas pressure in an RF sputtering deposition process it is possible to deposit an oxygenated CdS (CdS:O) layer with an improved band gap. In this thesis, oxygenated CdS films for CdTe TF-PV applications have been successfully deposited by using pulsed DC magnetron sputtering. The process is highly stable using a pulse frequency of 150 kHz and a 2.5 μs pulse reverse time. No plasma arcing was detected. A range of CdS:O films were deposited by using O2 flows from 1 sccm to 10 sccm during the deposition process. The deposition rates achieved using pulsed DC magnetron sputtering with only 500 W of power to the magnetron target were in the range ~1.49 nm/s ~2.44 nm/s, depending on the oxygen flow rate used. The properties of CdS thin films deposited by pulsed DC magnetron sputtering and chemical bath deposition have been studied and compared. The pulsed DC magnetron sputtering process produced CdS thin films with the preferred hexagonal <001> oriented crystalline structure with a columnar grain growth, while sonoCBD deposited films were polycrystalline with a cubic structure and small grainy crystallites throughout the thickness of the films. Examination of the PDCMS deposited CdS films confirmed the increased grain size, increased density, and higher crystallinity compared to the sonoCBD CdS films. The deposition rate for CdS obtained using pulsed DC magnetron sputtering was 2.86 nm/s using only 500 W power on a six inch circular target compared to the much slower (0.027 nm/s) for the sonoChemical bath deposited layers. CdTe thin films were grown on CdS films prepared by sonoCBD and Pulsed DC magnetron sputtering. The results showed that the deposition technique used for the CdS layer affected the growth and properties of the CdTe film and also determined the deposition rate of CdTe, being 3 times faster on the sputtered CdS. PDCMS CdTe layers were deposited at ambient temperature, 500 W, 2.9 μs, 10 s, 150 kHz, with a thickness of approximately 2 μm on CdS/TEC10 coated glass. The layers appear iii uniform and smooth with a grain size less than 100 nm, highly compact with the morphology dominated by columnar grain growth. Stress analysis was performed on the CdTe layers deposited at room temperature using different gas flows. Magnetron sputtered thin films deposited under low gas pressure are often subject to compressive stress due to the high mobility of the atoms during the deposition process. A possible way to reduce the stress in the film is the post-deposition annealing treatment. As the lattice parameter increased; the stress in the film is relieved. Also, a changing the deposition substrate temperature had an effect on the microstructure of CdTe thin films. Increasing the deposition temperature increased the grain size, up to ~600 nm. CdTe thin films with low stress have been deposited on CdS/TEC10 coated glass by setting the deposition substrate temperature at ~200°C and using high argon flows ~ 70 sccm Ar. Finally, broadband multilayer ARCs using alternate high and low refractive index dielectric thin films have been developed to improve the light transmission into solar cell devices by reducing the reflection of the glass in the extended wavelength range utilised by thin-film CdTe devices. A four-layer multilayer stack has been designed and tested, which operates across the wavelength range used by thin-film CdTe PV devices (400 850 nm). Optical modelling predicts that the MAR coating reduces the WAR (400-850 nm) from the glass surface from 4.22% down to 1.22%. The application of the MAR coating on a thin-film CdTe solar cell increased the efficiency from 10.55% to 10.93% or by 0.38% in absolute terms. This is a useful 3.6% relative increase in efficiency. The increased light transmission leads to improvement of the short-circuit current density produced by the cell by 0.65 mA/cm2. The MAR sputtering process developed in this work is capable of scaling to an industrial level.
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8

Alfadhili, Fadhil K. "Development of Back Contacts for CdTe Thin Films Solar Cells." University of Toledo / OhioLINK, 2020. http://rave.ohiolink.edu/etdc/view?acc_num=toledo1588962981116943.

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9

Bapanapalli, Srilatha. "Cds/cdte thin film solar cells with zinc stannate buffer layer." [Tampa, Fla.] : University of South Florida, 2005. http://purl.fcla.edu/fcla/etd/SFE0001004.

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10

Yilmaz, Sibel. "Thin film CDTE solar cells deposited by pulsed DC magnetron sputtering." Thesis, Loughborough University, 2017. https://dspace.lboro.ac.uk/2134/31838.

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Анотація:
Thin film cadmium telluride (CdTe) technology is the most important competitor for silicon (Si) based solar cells. Pulsed direct current (DC) magnetron sputtering is a new technique has been developed for thin film CdTe deposition. This technique is industrially scalable and provides uniform coating. It is also possible to deposit thin films at low substrate temperatures. A series of experiments are presented for the optimisation of the cadmium chloride (CdCl2) activation process. Thin film CdTe solar cells require CdCl2 activation process to improve conversion efficiencies. The role of this activation process is to increase the grain size by recrystallisation and to remove stacking faults. Compaan and Bohn [1] used the radio-frequency (RF) sputtering technique for CdTe solar cell deposition and they observed small blisters on CdTe layer surface. They reported that blistering occurred after the CdCl2 treatment during the annealing process. Moreover, void formation was observed in the CdTe layer after the CdCl2 activation process. Voids at the cadmium sulphide (CdS)/CdTe junction caused delamination hence quality of the junction is poor. This issue has been known for more than two decades but the mechanisms of the blister formation have not been understood. One reason may be the stress formation during CdTe solar cells deposition or during the CdCl2 treatment. Therefore, the stress analysis was performed to remove the defects observed after the CdCl2 treatment. This was followed by the rapid thermal annealing to isolate the CdCl2 effect by simply annealing. Small bubbles observed in the CdTe layer which is the first step of the blister formation. Using high resolution transmission electron microscopy (HR-TEM), it has been discovered that argon (Ar) working gas trapped during the deposition process diffuses in the lattice which merge and form the bubbles during the annealing process and grow agglomeration mainly at interfaces and grain boundaries (GBs). Blister and void formation were observed in the CdTe devices after the CdCl2 treatment. Therefore, krypton (Kr), neon (Ne) gases were used as the magnetron working gas during the deposition of CdTe layer. The results presented in this thesis indicated that blister and void formation were still existing with the use of Kr an Ne. Xe, which has a higher atomic mass than Kr, Ne, Ar, Cd and Te, was used as the magnetron working gas and it resulted in surface blister and void free devices.
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Книги з теми "CdTe, thin film, solar cell"

1

Gessert, Timothy A. Junction evolution during fabrication of CdS/CdTe thin-film PV solar cells. Golden, Colo.]: National Renewable Energy Laboratory, 2010.

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Albin, David S. Correlations of capacitance-voltage hysteresis with thin-film CdTe solar cell performance during accelerated lifetime testing. Golden, CO]: National Renewable Energy Laboratory, 2011.

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Duenow, Joel N. CdS/CdTe solar cells containing directly deposited CdSxTe1-x alloy layers: Preprint. Golden, CO: National Renewable Energy Laboratory, 2011.

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Moutinho, H. R. Recrystallization of PVD CdTe thin films induced by CdCl2 treatment: A comparison between vapor and solution processes : preprint. Golden, Colo: National Renewable Energy Laboratory, 2008.

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E, Rickus, and Commission of the European Communities. Directorate-General for Science, Research and Development., eds. Development of a CaSe thin film solar cell. Luxembourg: Commission of the European Communities, 1985.

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6

Dhere, R. Investigation of CdZnTe for thin-film tandem solar cell applications: Preprint. Golden, Colo: National Renewable Energy Laboratory, 2003.

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7

Albin, David S. Effect of hysteresis on measurements of thin-film cell performance. Golden, CO]: National Renewable Energy Laboratory, 2011.

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8

Benson, F. A. Development of R.F. sputtered thin-film A-SI towards a P-I-N solar cell. Luxembourg: Commission of the European Communities, 1985.

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9

Development of thin film silicon solar cell using inkjet printed silicon and other inkjet processes: Cooperative research and development final report. Golden, Colo.]: National Renewable Energy Laboratory, 2012.

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10

Bhatti, Muhammad Tariq. A novel method of production of CdS/CdTe thin film solar cells. 1993.

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Частини книг з теми "CdTe, thin film, solar cell"

1

Böer, Karl W. "The CdS/CdTe Solar Cell." In Handbook of the Physics of Thin-Film Solar Cells, 649–58. Berlin, Heidelberg: Springer Berlin Heidelberg, 2013. http://dx.doi.org/10.1007/978-3-642-36748-9_34.

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Romeo, Alessandro. "CdTe and CuInGaSe2 Thin-Film Solar Cells." In Solar Cells and Modules, 197–217. Cham: Springer International Publishing, 2020. http://dx.doi.org/10.1007/978-3-030-46487-5_8.

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Böer, Karl W. "CdS/CdTe Analysis and Modeling." In Handbook of the Physics of Thin-Film Solar Cells, 659–64. Berlin, Heidelberg: Springer Berlin Heidelberg, 2013. http://dx.doi.org/10.1007/978-3-642-36748-9_35.

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Böer, Karl W. "Commercial Use of CdS/CdTe." In Handbook of the Physics of Thin-Film Solar Cells, 691–97. Berlin, Heidelberg: Springer Berlin Heidelberg, 2013. http://dx.doi.org/10.1007/978-3-642-36748-9_38.

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Böer, Karl W. "Basic Physics Discussion of CdS/CdTe." In Handbook of the Physics of Thin-Film Solar Cells, 665–75. Berlin, Heidelberg: Springer Berlin Heidelberg, 2013. http://dx.doi.org/10.1007/978-3-642-36748-9_36.

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6

Skarp, J., Y. Koskinen, S. Lindfors, A. Rautiainen, and T. Suntola. "Development and Evaluation of Cds/CdTe Thin Film PV Cells." In Tenth E.C. Photovoltaic Solar Energy Conference, 567–69. Dordrecht: Springer Netherlands, 1991. http://dx.doi.org/10.1007/978-94-011-3622-8_144.

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7

Romeo, Alessandro, and Elisa Artegiani. "CdTe-Based Thin Film Solar Cells: Present Status and Future Developments." In Advances in Sustainability Science and Technology, 67–104. Singapore: Springer Nature Singapore, 2022. http://dx.doi.org/10.1007/978-981-19-3724-8_4.

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8

Tiwari, A. N., S. Blunier, K. Kessler, and H. Zogg. "P-Type Doping in Heteroepitaxial CdTe and Lift-Off Technique for Making Thin Film Single Crystal CdTe Solar Cells." In Tenth E.C. Photovoltaic Solar Energy Conference, 1411–12. Dordrecht: Springer Netherlands, 1991. http://dx.doi.org/10.1007/978-94-011-3622-8_351.

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9

Mohamed, H. A., and N. M. A. Hadia. "Improvement in the Efficiency of Thin Film CdS/CdTe Solar Cells Using Different TCO Materials." In Springer Proceedings in Physics, 107–18. Cham: Springer International Publishing, 2014. http://dx.doi.org/10.1007/978-3-319-05521-3_14.

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10

Rodhuan, Mirza Basyir, Rosmila Abdul-Kahar, and Amira Saryati Ameruddin. "Simulation on Optical Absorption for Amorphous Silicon Thin Film Solar Cell with CdSe/ZnS Quantum Dots." In Springer Proceedings in Physics, 81–93. Singapore: Springer Nature Singapore, 2022. http://dx.doi.org/10.1007/978-981-16-8903-1_9.

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Тези доповідей конференцій з теми "CdTe, thin film, solar cell"

1

Su, Qingfeng, Dongmin Li, Weimin Shi, Linjun Wang, and Yiben Xia. "CdTe thin film solar cell on flexible metallic substrate." In Seventh International Conference on Thin Film Physics and Applications, edited by Junhao Chu and Zhanshan Wang. SPIE, 2010. http://dx.doi.org/10.1117/12.888236.

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2

Nishio, T., K. Omura, A. Hanafusa, T. Arita, H. Higuchi, T. Aramoto, S. Shibutani, et al. "Thin-film CdS/CdTe solar cell with 15.05% efficiency." In Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996. IEEE, 1996. http://dx.doi.org/10.1109/pvsc.1996.564287.

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Yang, Xuke, Chao Chen, Kanghua Li, Yue Lu, and Jiang Tang. "CdSe thin film solar cell." In Asia Communications and Photonics Conference. Washington, D.C.: OSA, 2021. http://dx.doi.org/10.1364/acpc.2021.t2i.5.

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4

Ramanathan, V., L. Russell, C. H. Liu, and P. V. Meyers. "Characterization of CdTe thin film solar cells." In Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference. IEEE, 1988. http://dx.doi.org/10.1109/pvsc.1988.105943.

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Yang, Ruilong, Zhizhong Bai, Dezhao Wang, and Deliang Wang. "High efficient thin film CdTe solar cells." In 2013 Spanish Conference on Electron Devices (CDE). IEEE, 2013. http://dx.doi.org/10.1109/cde.2013.6481412.

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6

Dey, Maitry, N. K. Das, and M. A. Matin. "Effect of Thermally Evaporated n-CdTe Thin Film for Homojunction CdTe Solar Cell." In 2019 5th International Conference on Advances in Electrical Engineering (ICAEE). IEEE, 2019. http://dx.doi.org/10.1109/icaee48663.2019.8975642.

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Ferekides, Chris S., Vijaya Ceekala, Kathleen Dugan, Lawrence Killian, Daniel Oman, Rajesh Swaminathan, and Don Morel. "Recent advances in thin film CdTe solar cells." In The 13th NREL photovoltaics program review meeting. AIP, 1996. http://dx.doi.org/10.1063/1.49366.

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Ibrahim, A., S. Roy, U. B. Memon, A. L. Sharma, and S. P. Duttagupta. "Fabrication And Characterization Of CdS/CdTe Heterojunction Thin Film Solar Cell." In Michael Faraday IET International Summit 2015. Institution of Engineering and Technology, 2015. http://dx.doi.org/10.1049/cp.2015.1678.

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Rohatgi, A., R. Sudharsanan, S. A. Ringel, P. V. Meyers, and C. H. Liu. "Wide bandgap thin film solar cells from CdTe alloys." In Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference. IEEE, 1988. http://dx.doi.org/10.1109/pvsc.1988.105955.

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McCandless, Brian E., Robert W. Birkmire, D. Garth Jensen, James E. Phillips, and Issakha Youm. "Processing issues for thin film CdTe/CdS solar cells." In National renewable energy laboratory and sandia national laboratories photovoltaics program review meeting. AIP, 1997. http://dx.doi.org/10.1063/1.52914.

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Звіти організацій з теми "CdTe, thin film, solar cell"

1

Compaan, A. D., X. Deng, and R. G. Bohn. High efficiency thin film CdTe and a-Si based solar cells. Office of Scientific and Technical Information (OSTI), January 2000. http://dx.doi.org/10.2172/754623.

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2

Gray, J. L., R. J. Schwartz, and Y. J. Lee. Development of a Computer Model for Polycrystalline Thin-Film CuInSe2 and CdTe Solar Cells. Office of Scientific and Technical Information (OSTI), September 1992. http://dx.doi.org/10.2172/7023173.

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3

Rohatgi, A., H. C. Chou, S. Kamra, and A. Bhat. Development of high-efficiency, thin-film CdTe solar cells. Final subcontract report, 1 February 1992--30 November 1995. Office of Scientific and Technical Information (OSTI), January 1996. http://dx.doi.org/10.2172/203471.

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4

Rohatgi, A., H. C. Chou, S. Kamra, and A. Bhat. Development of High-Efficiency, Thin-Film CdTe Solar Cells: Annual Subcontract Report, 1 January 1993 - 31 December 1993. Office of Scientific and Technical Information (OSTI), September 1994. http://dx.doi.org/10.2172/10183690.

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Compaan, A. D., X. Deng, and R. G. Bohn. High Efficiency Thin Film CdTe and a-Si Based Solar Cells: Annual Technical Report, 4 March 1999 - 3 March 2000. Office of Scientific and Technical Information (OSTI), August 2001. http://dx.doi.org/10.2172/788762.

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Compaan, A. D., X. Deng, and R. G. Bohn. High Efficiency Thin Film CdTe and a-Si Based Solar Cells: Final Technical Report, 4 March 1998--15 October 2001. Office of Scientific and Technical Information (OSTI), October 2003. http://dx.doi.org/10.2172/15004829.

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Morel, D. L., and C. S. Ferekides. Advanced Processing Technology for High-Efficiency, Thin-Film CuInSe2 and CdTe Solar Cells: Annual Subcontract Report, 1 March 1993 - 28 February 1994. Office of Scientific and Technical Information (OSTI), July 1994. http://dx.doi.org/10.2172/10169776.

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Gray, J. L., R. J. Schwartz, and Y. J. Lee. Development of a Computer Model for Polycrystalline Thin-Film CuInSe2 and CdTe Solar Cells, Annual Subcontract Report, 1 January 1990 - 31 December 1990. Office of Scientific and Technical Information (OSTI), April 1992. http://dx.doi.org/10.2172/5663044.

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9

Morel, D. L., and C. S. Ferekides. Advanced processing technology for high-efficiency, thin-film CuInSe{sub 2} and CdTe solar cells. Final subcontract report, March 1, 1992--April 30, 1995. Office of Scientific and Technical Information (OSTI), January 1996. http://dx.doi.org/10.2172/179202.

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Gray, J. L., R. J. Schwartz, and Y. J. Lee. Development of a computer model for polycrystalline thin-film CuInSe{sub 2} and CdTe solar cells. Annual subcontract report, 1 January 1990--31 December 1990. Office of Scientific and Technical Information (OSTI), April 1992. http://dx.doi.org/10.2172/10138707.

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