Статті в журналах з теми "CARRIER RELIABILITY"
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NASEH, SASAN, and M. JAMAL DEEN. "RF CMOS RELIABILITY." International Journal of High Speed Electronics and Systems 11, no. 04 (December 2001): 1249–95. http://dx.doi.org/10.1142/s0129156401001088.
Повний текст джерелаZHAO, Lijuan. "Reliability Design of Shearer's Planet Carrier." Journal of Mechanical Engineering 55, no. 8 (2019): 192. http://dx.doi.org/10.3901/jme.2019.08.192.
Повний текст джерелаCheng, Junji, and Xingbi Chen. "Hot-carrier reliability in OPTVLD-LDMOS." Journal of Semiconductors 33, no. 6 (June 2012): 064003. http://dx.doi.org/10.1088/1674-4926/33/6/064003.
Повний текст джерелаJie Liao, Cher Ming Tan, and Geert Spierings. "Hot-Carrier Reliability of Power SOI EDNMOS." IEEE Transactions on Power Electronics 25, no. 7 (July 2010): 1685–91. http://dx.doi.org/10.1109/tpel.2010.2041255.
Повний текст джерелаSoares, C. Guedes, and A. P. Teixeira. "Structural reliability of two bulk carrier designs." Marine Structures 13, no. 2 (March 2000): 107–28. http://dx.doi.org/10.1016/s0951-8339(00)00004-6.
Повний текст джерелаKoeppel, Gaudenz, and Göran Andersson. "Reliability modeling of multi-carrier energy systems." Energy 34, no. 3 (March 2009): 235–44. http://dx.doi.org/10.1016/j.energy.2008.04.012.
Повний текст джерелаSugiharto, D. S., C. Y. Yang, Huy Le, and J. E. Chung. "Beating the heat [CMOS hot-carrier reliability]." IEEE Circuits and Devices Magazine 14, no. 5 (1998): 43–51. http://dx.doi.org/10.1109/101.721519.
Повний текст джерелаHwang, Hyunsang, Jack Lee, Pierre Fazan, and Chuck Dennison. "Hot-carrier reliability characteristics of narrow-width MOSFETs." Solid-State Electronics 36, no. 4 (April 1993): 665–66. http://dx.doi.org/10.1016/0038-1101(93)90284-w.
Повний текст джерелаAur, S., and Ping Yang. "IVB-6 hot-carrier reliability of trench transistor." IEEE Transactions on Electron Devices 34, no. 11 (November 1987): 2374. http://dx.doi.org/10.1109/t-ed.1987.23289.
Повний текст джерелаMinehane, S., S. Healy, P. O'Sullivan, K. McCarthy, A. Mathewson, and B. Mason. "Direct parameter extraction for hot-carrier reliability simulation." Microelectronics Reliability 37, no. 10-11 (October 1997): 1437–40. http://dx.doi.org/10.1016/s0026-2714(97)00081-4.
Повний текст джерелаRafı́, J. M., and F. Campabadal. "Hot-carrier reliability in deep-submicrometer LATID NMOSFETs." Microelectronics Reliability 40, no. 4-5 (April 2000): 743–46. http://dx.doi.org/10.1016/s0026-2714(99)00300-5.
Повний текст джерелаMustafa, Samah A. "Reliability of Trigonometric Transform-based Multi-Carrier Scheme." ARO-THE SCIENTIFIC JOURNAL OF KOYA UNIVERSITY 6, no. 2 (December 22, 2018): 49. http://dx.doi.org/10.14500/aro.10312.
Повний текст джерелаZhao, Xilin, Fei Liu, Bo Fu, and Na Fang. "Reliability analysis of hybrid multi-carrier energy systems based on entropy-based Markov model." Proceedings of the Institution of Mechanical Engineers, Part O: Journal of Risk and Reliability 230, no. 6 (December 2016): 561–69. http://dx.doi.org/10.1177/1748006x16663056.
Повний текст джерелаHou, Changbo, Jie Zhang, Yonggui Yuan, Jun Yang, and Libo Yuan. "Reliability Demodulation Algorithm Design for Phase Generated Carrier Signal." IEEE Transactions on Reliability 71, no. 1 (March 2022): 127–38. http://dx.doi.org/10.1109/tr.2021.3125068.
Повний текст джерелаHokazono, A., S. Balasubramanian, K. Ishimaru, H. Ishiuchi, Chenming Hu, and Tsu-Jae King Liu. "MOSFET hot-carrier reliability improvement by forward-body bias." IEEE Electron Device Letters 27, no. 7 (July 2006): 605–8. http://dx.doi.org/10.1109/led.2006.877306.
Повний текст джерелаUraoka, Y., N. Tsutsu, Y. Nakata, and S. Akiyama. "Evaluation technology of VLSI reliability using hot carrier luminescence." IEEE Transactions on Semiconductor Manufacturing 4, no. 3 (1991): 183–92. http://dx.doi.org/10.1109/66.85938.
Повний текст джерелаQuader, K. N., E. R. Minami, Wei-Jen Ko, P. K. Ko, and Chenming Hu. "Hot-carrier-reliability design guidelines for CMOS logic circuits." IEEE Journal of Solid-State Circuits 29, no. 3 (March 1994): 253–62. http://dx.doi.org/10.1109/4.278346.
Повний текст джерелаLee, Woosung, and Hyunsang Hwang. "Hot carrier reliability characteristics of a bend-gate MOSFET." Solid-State Electronics 44, no. 6 (June 2000): 1117–19. http://dx.doi.org/10.1016/s0038-1101(00)00004-6.
Повний текст джерелаMomose, Hisayo Sasaki, Shin-ichi Nakamura, Tatsuya Ohguro, Takashi Yoshitomi, Eiji Morifuji, Toyota Morimoto, Yasuhiro Katsumata, and Hiroshi Iwai. "Hot-carrier reliability of ultra-thin gate oxide CMOS." Solid-State Electronics 44, no. 11 (November 2000): 2035–44. http://dx.doi.org/10.1016/s0038-1101(00)00101-5.
Повний текст джерелаFang, Lang, Xiaoning Zhang, Keshav Sood, Yunqing Wang, and Shui Yu. "Reliability-aware virtual network function placement in carrier networks." Journal of Network and Computer Applications 154 (March 2020): 102536. http://dx.doi.org/10.1016/j.jnca.2020.102536.
Повний текст джерелаQu, Long, Maurice Khabbaz, and Chadi Assi. "Reliability-Aware Service Chaining In Carrier-Grade Softwarized Networks." IEEE Journal on Selected Areas in Communications 36, no. 3 (March 2018): 558–73. http://dx.doi.org/10.1109/jsac.2018.2815338.
Повний текст джерелаDózsa, L. "On the reliability of minority carrier injection DLTS spectra." physica status solidi (a) 94, no. 2 (April 16, 1986): 735–43. http://dx.doi.org/10.1002/pssa.2210940240.
Повний текст джерелаMeehan, Alan, Paula O'Sullivan, Paul Hurley, and Alan Mathewson. "Hot-carrier reliability lifetimes as predicted by Berkeley's model." Quality and Reliability Engineering International 11, no. 4 (1995): 269–72. http://dx.doi.org/10.1002/qre.4680110410.
Повний текст джерелаLiu, Hong Mei, and Li Juan Zhao. "Fatigue Analysis of Planet Carrier Based on Collaborative Simulation." Advanced Materials Research 189-193 (February 2011): 1910–13. http://dx.doi.org/10.4028/www.scientific.net/amr.189-193.1910.
Повний текст джерелаSALDANHA, JOHN P., DAWN M. RUSSELL, and JOHN E. TYWORTH. "A Disaggregate Analysis of Ocean Carriers' Transit Time Performance." Transportation Journal 45, no. 2 (2006): 39–60. http://dx.doi.org/10.2307/20713633.
Повний текст джерелаSALDANHA, JOHN P., DAWN M. RUSSELL, and JOHN E. TYWORTH. "A Disaggregate Analysis of Ocean Carriers' Transit Time Performance." Transportation Journal 45, no. 2 (2006): 39–60. http://dx.doi.org/10.5325/transportationj.45.2.0039.
Повний текст джерелаZhao, Jinghao, Xuefeng Yu, Jiangwei Cui, Qiwen Zheng, Hang Zhou, and Qi Guo. "A Study on Hot Carrier Reliability of Radiation Hardened H-gate PD SOI NMOSFET after Gamma Radiation." International Journal of Materials, Mechanics and Manufacturing 7, no. 2 (April 2019): 100–104. http://dx.doi.org/10.18178/ijmmm.2019.7.2.439.
Повний текст джерелаHokyung Park, Rino Choi, Byoung Hun Lee, Seung-Chul Song, Man Chang, C. D. Young, G. Bersuker, J. C. Lee, and Hyunsang Hwang. "Decoupling of cold-carrier effects in hot-carrier reliability assessment of HfO/sub 2/ gated nMOSFETs." IEEE Electron Device Letters 27, no. 8 (August 2006): 662–64. http://dx.doi.org/10.1109/led.2006.878041.
Повний текст джерелаLin, Wei Shin. "The Reliability Analysis of a Vacuum Forming Mold for IC Packing Bag." Advanced Materials Research 136 (October 2010): 114–17. http://dx.doi.org/10.4028/www.scientific.net/amr.136.114.
Повний текст джерелаFoschini, G. J. "Reliability of the repelling carrier method of implementing optical FDMA." IEEE Transactions on Communications 37, no. 12 (1989): 1275–81. http://dx.doi.org/10.1109/26.44199.
Повний текст джерелаMaricau, Elie, and Georges Gielen. "Efficient Variability-Aware NBTI and Hot Carrier Circuit Reliability Analysis." IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems 29, no. 12 (December 2010): 1884–93. http://dx.doi.org/10.1109/tcad.2010.2062870.
Повний текст джерелаPing-Chung Li and I. N. Hajj. "Computer-aided redesign of VLSI circuits for hot-carrier reliability." IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems 15, no. 5 (May 1996): 453–64. http://dx.doi.org/10.1109/43.506133.
Повний текст джерелаKueing-Long Chen, S. A. Saller, I. A. Groves, and D. B. Scott. "Reliability Effects on MOS Transistors Due to Hot-Carrier Injection." IEEE Journal of Solid-State Circuits 20, no. 1 (February 1985): 306–13. http://dx.doi.org/10.1109/jssc.1985.1052307.
Повний текст джерелаKueing-Long Chen, S. A. Saller, I. A. Groves, and D. B. Scott. "Reliability effects on MOS transistors due to hot-carrier injection." IEEE Transactions on Electron Devices 32, no. 2 (February 1985): 386–93. http://dx.doi.org/10.1109/t-ed.1985.21953.
Повний текст джерелаBrisbin, Douglas, Andy Strachan, and Prasad Chaparala. "Optimizing the hot carrier reliability of N-LDMOS transistor arrays." Microelectronics Reliability 45, no. 7-8 (July 2005): 1021–32. http://dx.doi.org/10.1016/j.microrel.2004.11.054.
Повний текст джерелаKamal, Mehdi, Qing Xie, Massoud Pedram, Ali Afzali-Kusha, and Saeed Safari. "An efficient temperature dependent hot carrier injection reliability simulation flow." Microelectronics Reliability 57 (February 2016): 10–19. http://dx.doi.org/10.1016/j.microrel.2015.12.008.
Повний текст джерелаPan, Y., K. K. Ng, and V. Kwong. "A novel hot carrier reliability monitor for LDD p-MOSFETs." Solid-State Electronics 37, no. 12 (December 1994): 1961–65. http://dx.doi.org/10.1016/0038-1101(94)90063-9.
Повний текст джерелаGoguenheim, D., A. Bravaix, D. Vuillaume, M. Varrot, N. Revil, and P. Mortini. "HOT-CARRIER RELIABILITY IN n-MOSFETs USED AS PASS-TRANSISTORS." Microelectronics Reliability 38, no. 4 (April 1998): 539–44. http://dx.doi.org/10.1016/s0026-2714(97)00217-5.
Повний текст джерелаHori, Takashi. "Nitrided gate-oxide CMOS technology for improved hot-carrier reliability." Microelectronic Engineering 22, no. 1-4 (August 1993): 245–52. http://dx.doi.org/10.1016/0167-9317(93)90167-4.
Повний текст джерелаYi, Peng Xing, Li Jian Dong, and Yuan Xin Chen. "The Multi-Objective Optimization of the Planet Carrier in Wind Turbine Gearbox." Applied Mechanics and Materials 184-185 (June 2012): 565–69. http://dx.doi.org/10.4028/www.scientific.net/amm.184-185.565.
Повний текст джерелаGong, Yan Jue, Fu Zhao, Hong Bing Xin, Hui Yu Xiang, Chun Ling Meng, and Yuan Zhang. "Modeling and Simulation Research of Time-Dependent Reliability Model of Tooth Carrier in Feed Mechanism." Applied Mechanics and Materials 701-702 (December 2014): 739–42. http://dx.doi.org/10.4028/www.scientific.net/amm.701-702.739.
Повний текст джерелаAstashkov, Nikolay, and Yuriy Belogolov. "METHOD FOR INCREASING THE RELIABILITY OF THE PHASE SPLITTERS ELECTRIC CARRIER." Modern Technologies and Scientific and Technological Progress 1, no. 1 (May 17, 2021): 217–18. http://dx.doi.org/10.36629/2686-9896-2021-1-1-217-218.
Повний текст джерелаPereguda, Arkadij Ivanovich, and Vladimir Ivanovich Belozerov. "Prediction of reliability of flow sensors of SHADR-32m heat carrier." Izvestiya Wysshikh Uchebnykh Zawedeniy, Yadernaya Energetika 2017, no. 1 (March 2017): 51–62. http://dx.doi.org/10.26583/npe.2017.1.05.
Повний текст джерелаChen, Yilong, Fan Li, Kui Li, Xue Li, Min Liu, and Gang Liu. "Thermal fatigue reliability improvement of leadless ceramic chip carrier solder joints." Microelectronics Reliability 132 (May 2022): 114532. http://dx.doi.org/10.1016/j.microrel.2022.114532.
Повний текст джерелаMohd Dzukhi, M. I., T. A. Musa, W. A. Wan Aris, A. H. Omar, and I. A. Musliman. "RELIABILITY OF THE GPS CARRIER-PHASE FIX SOLUTION UNDER HARSH CONDITION." International Archives of the Photogrammetry, Remote Sensing and Spatial Information Sciences XLVI-4/W3-2021 (January 11, 2022): 223–27. http://dx.doi.org/10.5194/isprs-archives-xlvi-4-w3-2021-223-2022.
Повний текст джерелаJain, S., W. T. Cochran, and M. L. Chen. "Sloped-junction LDD (SJLDD) MOSFET structures for improved hot-carrier reliability." IEEE Electron Device Letters 9, no. 10 (October 1988): 539–41. http://dx.doi.org/10.1109/55.17837.
Повний текст джерелаJung, Sang-Hoon, Hee-Sun Shin, and Min-Koo Han. "Defect-Free Junction TFT for Improving Reliability under Hot Carrier Stress." Physica Scripta T114 (January 1, 2004): 127–29. http://dx.doi.org/10.1088/0031-8949/2004/t114/032.
Повний текст джерелаChen, H. W., S. Y. Chen, C. C. Lu, C. H. Liu, F. C. Chiu, Z. Y. Hsieh, H. S. Huang, et al. "Hot Carrier Reliability of ALD HfSiON Gated MOSFETs with Different Compositions." ECS Transactions 16, no. 5 (December 18, 2019): 55–65. http://dx.doi.org/10.1149/1.2981587.
Повний текст джерелаDieudonné, François, Sébastien Haendler, Jalal Jomaah, and Francis Balestra. "Low frequency noise and hot-carrier reliability in advanced SOI MOSFETs." Solid-State Electronics 48, no. 6 (June 2004): 985–97. http://dx.doi.org/10.1016/j.sse.2003.12.025.
Повний текст джерелаKizilyalli, I. C., J. W. Lyding, and K. Hess. "Deuterium post-metal annealing of MOSFET's for improved hot carrier reliability." IEEE Electron Device Letters 18, no. 3 (March 1997): 81–83. http://dx.doi.org/10.1109/55.556087.
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