Статті в журналах з теми "Carbon Doping in GaN"
Оформте джерело за APA, MLA, Chicago, Harvard та іншими стилями
Ознайомтеся з топ-50 статей у журналах для дослідження на тему "Carbon Doping in GaN".
Біля кожної праці в переліку літератури доступна кнопка «Додати до бібліографії». Скористайтеся нею – і ми автоматично оформимо бібліографічне посилання на обрану працю в потрібному вам стилі цитування: APA, MLA, «Гарвард», «Чикаго», «Ванкувер» тощо.
Також ви можете завантажити повний текст наукової публікації у форматі «.pdf» та прочитати онлайн анотацію до роботи, якщо відповідні параметри наявні в метаданих.
Переглядайте статті в журналах для різних дисциплін та оформлюйте правильно вашу бібліографію.
Liu, Qiang, Marcin Zając, Małgorzata Iwińska, Shuai Wang, Wenrong Zhuang, Michał Boćkowski, and Xinqiang Wang. "Carbon doped semi-insulating freestanding GaN crystals by ethylene." Applied Physics Letters 121, no. 17 (October 24, 2022): 172103. http://dx.doi.org/10.1063/5.0118250.
Повний текст джерелаShen, Zhaohua, Xuelin Yang, Shan Wu, Huayang Huang, Xiaolan Yan, Ning Tang, Fujun Xu, et al. "Mechanism for self-compensation in heavily carbon doped GaN." AIP Advances 13, no. 3 (March 1, 2023): 035026. http://dx.doi.org/10.1063/5.0133421.
Повний текст джерелаRamos, L. E., J. Furthm�ller, J. R. Leite, L. M. R. Scolfaro, and F. Bechstedt. "Carbon-Based Defects in GaN: Doping Behaviour." physica status solidi (b) 234, no. 3 (December 2002): 864–67. http://dx.doi.org/10.1002/1521-3951(200212)234:3<864::aid-pssb864>3.0.co;2-x.
Повний текст джерелаЛундин, В. В., А. В. Сахаров, Е. Е. Заварин, Д. А. Закгейм, Е. Ю. Лундина, П. Н. Брунков та А. Ф. Цацульников. "Изолирующие слои GaN, совместно легированные железом и углеродом". Письма в журнал технической физики 45, № 14 (2019): 36. http://dx.doi.org/10.21883/pjtf.2019.14.48022.17738.
Повний текст джерелаAs, D. J., U. K�hler, M. L�bbers, J. Mimkes, and K. Lischka. "p-Type Doping of Cubic GaN by Carbon." physica status solidi (a) 188, no. 2 (December 2001): 699–703. http://dx.doi.org/10.1002/1521-396x(200112)188:2<699::aid-pssa699>3.0.co;2-8.
Повний текст джерелаRAJAN, SIDDHARTH, ARPAN CHAKRABORTY, UMESH K. MISHRA, CHRISTIANE POBLENZ, PATRICK WALTEREIT, and JAMES S. SPECK. "MBE-Grown AlGaN/GaN HEMTs on SiC." International Journal of High Speed Electronics and Systems 14, no. 03 (September 2004): 732–37. http://dx.doi.org/10.1142/s0129156404002752.
Повний текст джерелаAs, D. J., E. Tschumak, H. Pöttgen, O. Kasdorf, J. W. Gerlach, H. Karl, and K. Lischka. "Carbon doping of non-polar cubic GaN by CBr4." Journal of Crystal Growth 311, no. 7 (March 2009): 2039–41. http://dx.doi.org/10.1016/j.jcrysgro.2008.11.013.
Повний текст джерелаWu, Shan, Xuelin Yang, Zhenxing Wang, Zhongwen Ouyang, Huayang Huang, Qing Zhang, Qiuyu Shang, et al. "Influence of intrinsic or extrinsic doping on charge state of carbon and its interaction with hydrogen in GaN." Applied Physics Letters 120, no. 24 (June 13, 2022): 242101. http://dx.doi.org/10.1063/5.0093514.
Повний текст джерелаSchmult, S., H. Schürmann, G. Schmidt, P. Veit, F. Bertram, J. Christen, A. Großer, and T. Mikolajick. "Correlating yellow and blue luminescence with carbon doping in GaN." Journal of Crystal Growth 586 (May 2022): 126634. http://dx.doi.org/10.1016/j.jcrysgro.2022.126634.
Повний текст джерелаLi, Xun, Örjan Danielsson, Henrik Pedersen, Erik Janzén, and Urban Forsberg. "Precursors for carbon doping of GaN in chemical vapor deposition." Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena 33, no. 2 (March 2015): 021208. http://dx.doi.org/10.1116/1.4914316.
Повний текст джерелаFariza, Aqdas, Andreas Lesnik, Jürgen Bläsing, Marc P. Hoffmann, Florian Hörich, Peter Veit, Hartmut Witte, Armin Dadgar, and André Strittmatter. "On reduction of current leakage in GaN by carbon-doping." Applied Physics Letters 109, no. 21 (November 21, 2016): 212102. http://dx.doi.org/10.1063/1.4968823.
Повний текст джерелаAs, D. J., D. G. Pacheco-Salazar, S. Potthast, and K. Lischka. "Carbon doping of cubic GaN under gallium-rich growth conditions." physica status solidi (c), no. 7 (December 2003): 2537–40. http://dx.doi.org/10.1002/pssc.200303547.
Повний текст джерелаLisker, M., A. Krtschil, H. Witte, J. Christen, A. Krost, U. Birkle, S. Einfeldt, and D. Hommel. "Influence of Carbon Doping on the Photoconductivity in GaN Layers." physica status solidi (b) 216, no. 1 (November 1999): 593–97. http://dx.doi.org/10.1002/(sici)1521-3951(199911)216:1<593::aid-pssb593>3.0.co;2-4.
Повний текст джерелаDanielsson, Örjan, Xun Li, Lars Ojamäe, Erik Janzén, Henrik Pedersen, and Urban Forsberg. "A model for carbon incorporation from trimethyl gallium in chemical vapor deposition of gallium nitride." Journal of Materials Chemistry C 4, no. 4 (2016): 863–71. http://dx.doi.org/10.1039/c5tc03989d.
Повний текст джерелаAmilusik, Mikolaj, Marcin Zajac, Tomasz Sochacki, Boleslaw Lucznik, Michal Fijalkowski, Malgorzata Iwinska, Damian Wlodarczyk, Ajeesh Kumar Somakumar, Andrzej Suchocki, and Michal Bockowski. "Carbon and Manganese in Semi-Insulating Bulk GaN Crystals." Materials 15, no. 7 (March 23, 2022): 2379. http://dx.doi.org/10.3390/ma15072379.
Повний текст джерелаGao, Z., M. Meneghini, F. Rampazzo, M. Rzin, C. De Santi, G. Meneghesso, and E. Zanoni. "Reliability comparison of AlGaN/GaN HEMTs with different carbon doping concentration." Microelectronics Reliability 100-101 (September 2019): 113489. http://dx.doi.org/10.1016/j.microrel.2019.113489.
Повний текст джерелаGamov, I., E. Richter, M. Weyers, G. Gärtner, and K. Irmscher. "Carbon doping of GaN: Proof of the formation of electrically active tri-carbon defects." Journal of Applied Physics 127, no. 20 (May 29, 2020): 205701. http://dx.doi.org/10.1063/5.0010844.
Повний текст джерелаLin, Wei, Maojun Wang, Haozhe Sun, Bing Xie, Cheng P. Wen, Yilong Hao, and Bo Shen. "Suppressing Buffer-Induced Current Collapse in GaN HEMTs with a Source-Connected p-GaN (SCPG): A Simulation Study." Electronics 10, no. 8 (April 15, 2021): 942. http://dx.doi.org/10.3390/electronics10080942.
Повний текст джерелаLiang, Feng, Degang Zhao, Desheng Jiang, Zongshun Liu, Jianjun Zhu, Ping Chen, Jing Yang, Shuangtao Liu, Yao Xing, and Liqun Zhang. "Role of Si and C Impurities in Yellow and Blue Luminescence of Unintentionally and Si-Doped GaN." Nanomaterials 8, no. 12 (December 10, 2018): 1026. http://dx.doi.org/10.3390/nano8121026.
Повний текст джерелаKoller, Christian, Gregor Pobegen, Clemens Ostermaier, and Dionyz Pogany. "Effect of Carbon Doping on Charging/Discharging Dynamics and Leakage Behavior of Carbon-Doped GaN." IEEE Transactions on Electron Devices 65, no. 12 (December 2018): 5314–21. http://dx.doi.org/10.1109/ted.2018.2872552.
Повний текст джерелаJoshi, Vipin, Shree Prakash Tiwari, and Mayank Shrivastava. "Part I: Physical Insight Into Carbon-Doping-Induced Delayed Avalanche Action in GaN Buffer in AlGaN/GaN HEMTs." IEEE Transactions on Electron Devices 66, no. 1 (January 2019): 561–69. http://dx.doi.org/10.1109/ted.2018.2878770.
Повний текст джерелаZimmermann, F., J. Beyer, F. C. Beyer, G. Gärtner, I. Gamov, K. Irmscher, E. Richter, M. Weyers, and J. Heitmann. "A carbon-doping related luminescence band in GaN revealed by below bandgap excitation." Journal of Applied Physics 130, no. 5 (August 7, 2021): 055703. http://dx.doi.org/10.1063/5.0053940.
Повний текст джерелаFernandez, J. R. L., F. Cerdeira, E. A. Meneses, J. A. N. T. Soares, O. C. Noriega, J. R. Leite, D. J. As, et al. "Near band-edge optical properties of cubic GaN with and without carbon doping." Microelectronics Journal 35, no. 1 (January 2004): 73–77. http://dx.doi.org/10.1016/s0026-2692(03)00226-x.
Повний текст джерелаNarita, Tetsuo, Daigo Kikuta, Hiroko Iguchi, Kenji Ito, Kazuyoshi Tomita, Tsutomu Uesugi, and Tetsu Kachi. "Reduction of peak electric field strength in GaN-HEMT with carbon doping layer." physica status solidi (c) 9, no. 3-4 (January 13, 2012): 915–18. http://dx.doi.org/10.1002/pssc.201100331.
Повний текст джерелаRathkanthiwar, Shashwat, Pegah Bagheri, Dolar Khachariya, Seiji Mita, Spyridon Pavlidis, Pramod Reddy, Ronny Kirste, James Tweedie, Zlatko Sitar, and Ramón Collazo. "Point-defect management in homoepitaxially grown Si-doped GaN by MOCVD for vertical power devices." Applied Physics Express 15, no. 5 (April 14, 2022): 051003. http://dx.doi.org/10.35848/1882-0786/ac6566.
Повний текст джерелаWampler, W. R., A. M. Armstrong, and G. Vizkelethy. "Carrier capture and emission by substitutional carbon impurities in GaN vertical diodes." Journal of Applied Physics 132, no. 9 (September 7, 2022): 095702. http://dx.doi.org/10.1063/5.0106905.
Повний текст джерелаFariza, A., A. Lesnik, S. Neugebauer, M. Wieneke, J. Hennig, J. Bläsing, H. Witte, A. Dadgar, and A. Strittmatter. "Leakage currents and Fermi-level shifts in GaN layers upon iron and carbon-doping." Journal of Applied Physics 122, no. 2 (July 14, 2017): 025704. http://dx.doi.org/10.1063/1.4993180.
Повний текст джерелаRossetto, I., F. Rampazzo, M. Meneghini, M. Silvestri, C. Dua, P. Gamarra, R. Aubry, et al. "Influence of different carbon doping on the performance and reliability of InAlN/GaN HEMTs." Microelectronics Reliability 54, no. 9-10 (September 2014): 2248–52. http://dx.doi.org/10.1016/j.microrel.2014.07.092.
Повний текст джерелаPoblenz, C., P. Waltereit, S. Rajan, S. Heikman, U. K. Mishra, and J. S. Speck. "Effect of carbon doping on buffer leakage in AlGaN/GaN high electron mobility transistors." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 22, no. 3 (2004): 1145. http://dx.doi.org/10.1116/1.1752907.
Повний текст джерелаGreen, D. S., U. K. Mishra, and J. S. Speck. "Carbon doping of GaN with CBr4 in radio-frequency plasma-assisted molecular beam epitaxy." Journal of Applied Physics 95, no. 12 (June 15, 2004): 8456–62. http://dx.doi.org/10.1063/1.1755431.
Повний текст джерелаArmitage, R., Q. Yang, H. Feick, and E. R. Weber. "Evaluation of CCl4 and CS2 as carbon doping sources in MBE growth of GaN." Journal of Crystal Growth 263, no. 1-4 (March 2004): 132–42. http://dx.doi.org/10.1016/j.jcrysgro.2003.11.091.
Повний текст джерелаTanaka, Daiki, Kenji Iso, and Jun Suda. "Comparative study of electrical properties of semi-insulating GaN substrates grown by hydride vapor phase epitaxy and doped with Fe, C, or Mn." Journal of Applied Physics 133, no. 5 (February 7, 2023): 055701. http://dx.doi.org/10.1063/5.0131470.
Повний текст джерелаZagni, Nicolò, Alessandro Chini, Francesco Maria Puglisi, Paolo Pavan, and Giovanni Verzellesi. "On the Modeling of the Donor/Acceptor Compensation Ratio in Carbon-Doped GaN to Univocally Reproduce Breakdown Voltage and Current Collapse in Lateral GaN Power HEMTs." Micromachines 12, no. 6 (June 16, 2021): 709. http://dx.doi.org/10.3390/mi12060709.
Повний текст джерелаKnetzger, Michael, Elke Meissner, Joff Derluyn, Marianne Germain, and Jochen Friedrich. "Investigations of Critical Structural Defects in Active Layers of GaN-on-Si for Power Electronic Devices." Solid State Phenomena 242 (October 2015): 417–20. http://dx.doi.org/10.4028/www.scientific.net/ssp.242.417.
Повний текст джерелаXu, Yue, Xuelin Yang, Peng Zhang, Xingzhong Cao, Yao Chen, Shiping Guo, Shan Wu, et al. "Influence of intrinsic or extrinsic doping on lattice locations of carbon in semi-insulating GaN." Applied Physics Express 12, no. 6 (May 14, 2019): 061002. http://dx.doi.org/10.7567/1882-0786/ab1c19.
Повний текст джерелаYacoub, H., C. Mauder, S. Leone, M. Eickelkamp, D. Fahle, M. Heuken, H. Kalisch, and A. Vescan. "Effect of Different Carbon Doping Techniques on the Dynamic Properties of GaN-on-Si Buffers." IEEE Transactions on Electron Devices 64, no. 3 (March 2017): 991–97. http://dx.doi.org/10.1109/ted.2017.2647841.
Повний текст джерелаLundin, W. V., A. V. Sakharov, E. E. Zavarin, D. Yu Kazantsev, B. Ya Ber, M. A. Yagovkina, P. N. Brunkov, and A. F. Tsatsulnikov. "Study of GaN doping with carbon from propane in a wide range of MOVPE conditions." Journal of Crystal Growth 449 (September 2016): 108–13. http://dx.doi.org/10.1016/j.jcrysgro.2016.06.002.
Повний текст джерелаWang, Yaxin, Takashi Teramoto, and Kazuhiro Ohkawa. "Effects of intentional oxygen and carbon doping in MOVPE-grown GaN layers on photoelectric properties." physica status solidi (b) 252, no. 5 (March 16, 2015): 1116–20. http://dx.doi.org/10.1002/pssb.201451495.
Повний текст джерелаTzou, An-Jye, Dan-Hua Hsieh, Szu-Hung Chen, Yu-Kuang Liao, Zhen-Yu Li, Chun-Yen Chang, and Hao-Chung Kuo. "An Investigation of Carbon-Doping-Induced Current Collapse in GaN-on-Si High Electron Mobility Transistors." Electronics 5, no. 4 (June 2, 2016): 28. http://dx.doi.org/10.3390/electronics5020028.
Повний текст джерелаWang, Hongyue, Po-Chun Hsu, Ming Zhao, Eddy Simoen, Arturo Sibaja-Hernandez, and Jinyan Wang. "Investigation of Defect Characteristics and Carrier Transport Mechanisms in GaN Layers With Different Carbon Doping Concentration." IEEE Transactions on Electron Devices 67, no. 11 (November 2020): 4827–33. http://dx.doi.org/10.1109/ted.2020.3025261.
Повний текст джерелаKnetzger, Michael, Elke Meissner, Joff Derluyn, Marianne Germain, and Jochen Friedrich. "Correlation of carbon doping variations with the vertical breakdown of GaN-on-Si for power electronics." Microelectronics Reliability 66 (November 2016): 16–21. http://dx.doi.org/10.1016/j.microrel.2016.09.014.
Повний текст джерелаZhang, Haitao, Xuanwu Kang, Yingkui Zheng, Hao Wu, Ke Wei, Xinyu Liu, Tianchun Ye, and Zhi Jin. "Investigation on Dynamic Characteristics of AlGaN/GaN Lateral Schottky Barrier Diode." Micromachines 12, no. 11 (October 22, 2021): 1296. http://dx.doi.org/10.3390/mi12111296.
Повний текст джерелаBirkle, U., M. Fehrer, V. Kirchner, S. Einfeldt, D. Hommel, S. Strauf, P. Michler, and J. Gutowski. "Studies on Carbon as Alternative P-Type Dopant for Gallium Nitride." MRS Internet Journal of Nitride Semiconductor Research 4, S1 (1999): 526–31. http://dx.doi.org/10.1557/s1092578300002994.
Повний текст джерелаWassner, Maximilian, Markus Eckardt, Andreas Reyer, Thomas Diemant, Michael S. Elsaesser, R. Jürgen Behm, and Nicola Hüsing. "Synthesis of amorphous and graphitized porous nitrogen-doped carbon spheres as oxygen reduction reaction catalysts." Beilstein Journal of Nanotechnology 11 (January 2, 2020): 1–15. http://dx.doi.org/10.3762/bjnano.11.1.
Повний текст джерелаYacoub, Hady, Thorsten Zweipfennig, Gerrit Lukens, Hannes Behmenburg, Dirk Fahle, Martin Eickelkamp, Michael Heuken, Holger Kalisch, and Andrei Vescan. "Effect of Carbon Doping Level on Static and Dynamic Properties of AlGaN/GaN Heterostructures Grown on Silicon." IEEE Transactions on Electron Devices 65, no. 8 (August 2018): 3192–98. http://dx.doi.org/10.1109/ted.2018.2850066.
Повний текст джерелаNi, Yiqiang, Liuan Li, Liang He, Taotao Que, Zhenxing Liu, Lei He, Zhisheng Wu, and Yang Liu. "Dependence of carbon doping concentration on the strain-state and properties of GaN grown on Si substrate." Superlattices and Microstructures 120 (August 2018): 720–26. http://dx.doi.org/10.1016/j.spmi.2018.06.012.
Повний текст джерелаHuang, Yuanchao, Rong Wang, Naifu Zhang, Yiqiang Zhang, Deren Yang, and Xiaodong Pi. "Effect of hydrogen on the unintentional doping of 4H silicon carbide." Journal of Applied Physics 132, no. 15 (October 21, 2022): 155704. http://dx.doi.org/10.1063/5.0108726.
Повний текст джерелаHirota, R., K. Kushida, Jun Takahashi, and Kazuo Kuriyama. "Carbon doping by ion implantation and C2H6 gas in GaN: Rutherford backscattering/channeling, Raman scattering and photoluminescence studies." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 219-220 (June 2004): 792–97. http://dx.doi.org/10.1016/j.nimb.2004.01.165.
Повний текст джерелаLi, Yuqi, Yang Ou, Jianjun Wu, and Yu Zhang. "Experimental Investigation on Plume Characteristics of PTFE-Filled Carbon, Graphite, Graphene for Laser-Assisted Pulsed Plasma Thruster." Applied Sciences 13, no. 16 (August 16, 2023): 9283. http://dx.doi.org/10.3390/app13169283.
Повний текст джерелаLi, Xun, and Songran Zhu. "Properties of carbon-doped GaN using isobutane as a dopant." Journal of Physics: Conference Series 2011, no. 1 (September 1, 2021): 012083. http://dx.doi.org/10.1088/1742-6596/2011/1/012083.
Повний текст джерела