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Автор: Grafiati
Опубліковано: 6 вересня 2023

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Статті в журналах з теми "Carbon Doping in GaN"

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Liu, Qiang, Marcin Zając, Małgorzata Iwińska, Shuai Wang, Wenrong Zhuang, Michał Boćkowski, and Xinqiang Wang. "Carbon doped semi-insulating freestanding GaN crystals by ethylene." Applied Physics Letters 121, no. 17 (October 24, 2022): 172103. http://dx.doi.org/10.1063/5.0118250.

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Semi-insulating freestanding GaN crystals are excellent candidates for substrates of GaN-based power electronic devices. Carbon doping is believed to be currently the optimal way to achieve semi-insulating GaN crystals grown by halide vapor phase epitaxy (HVPE). Here, we demonstrate that ethylene is an excellent source for C doping, where the doping efficiency is much higher than that of methane. Under the same carbon mole flux, the carbon incorporation rate of ethylene is 40 times in magnitude higher than that of methane. A record highest resistivity is achieved by ethylene doping with a carbon concentration of 1.5 × 1020 cm−3. Our work demonstrates that ethylene is an excellent carbon dopant source for HVPE-grown GaN crystals.
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Shen, Zhaohua, Xuelin Yang, Shan Wu, Huayang Huang, Xiaolan Yan, Ning Tang, Fujun Xu, et al. "Mechanism for self-compensation in heavily carbon doped GaN." AIP Advances 13, no. 3 (March 1, 2023): 035026. http://dx.doi.org/10.1063/5.0133421.

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Heavy carbon (C) doping is of great significance for semi-insulating GaN in power electronics. However, the doping behaviors, especially the atomic configurations and related self-compensation mechanisms, are still under debate. Here, with the formation energy as the input parameter, the concentrations of C defects with different atomic configurations are calculated by taking the configurational entropy into account. The result shows that the concentrations of tri-carbon complexes (CNCiCN, where Ci refers to interstitial carbon) and dicarbon complexes (CNCGa) cannot be neglected under heavy doping conditions. The concentration of CNCiCN can even exceed that of CN at sufficiently high doping levels. Especially, we suggest that it is the tri-carbon complex CNCiCN, instead of the commonly expected CGa, that acts as the self-compensation centers in semi-insulating GaN under heavy C doping conditions. The results provide a fresh look on the long-standing problem about the self-compensation mechanisms in C doped GaN.
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Ramos, L. E., J. Furthm�ller, J. R. Leite, L. M. R. Scolfaro, and F. Bechstedt. "Carbon-Based Defects in GaN: Doping Behaviour." physica status solidi (b) 234, no. 3 (December 2002): 864–67. http://dx.doi.org/10.1002/1521-3951(200212)234:3<864::aid-pssb864>3.0.co;2-x.

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Лундин, В. В., А. В. Сахаров, Е. Е. Заварин, Д. А. Закгейм, Е. Ю. Лундина, П. Н. Брунков та А. Ф. Цацульников. "Изолирующие слои GaN, совместно легированные железом и углеродом". Письма в журнал технической физики 45, № 14 (2019): 36. http://dx.doi.org/10.21883/pjtf.2019.14.48022.17738.

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Surface morphology and conductivity properties of semiinsulating GaN epitaxial layers are studied. Improvement of insulating properties with carbon or iron doping level increase is limited by morphology deterioration. Morphology development is different for these two cases. Co-doping with carbon and iron allows keeping planarity with significant improvement of insulating properties.
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As, D. J., U. K�hler, M. L�bbers, J. Mimkes, and K. Lischka. "p-Type Doping of Cubic GaN by Carbon." physica status solidi (a) 188, no. 2 (December 2001): 699–703. http://dx.doi.org/10.1002/1521-396x(200112)188:2<699::aid-pssa699>3.0.co;2-8.

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RAJAN, SIDDHARTH, ARPAN CHAKRABORTY, UMESH K. MISHRA, CHRISTIANE POBLENZ, PATRICK WALTEREIT, and JAMES S. SPECK. "MBE-Grown AlGaN/GaN HEMTs on SiC." International Journal of High Speed Electronics and Systems 14, no. 03 (September 2004): 732–37. http://dx.doi.org/10.1142/s0129156404002752.

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We report on the development of AlGaN/GaN high-electron mobility transistors (HEMTs) grown on SiC using plasma-assisted molecular beam epitaxy (MBE). In this work, we show that performance comparable to state-of-the-art AlGaN/GaN HEMTs can be achieved using MBE-grown material. Buffer leakage was an important limiting factor for these devices. The use of either carbon-doped buffers, or low Al/N ratio in the nucleation layer growth were effective in reducing buffer leakage. Studies varying the thickness and concentration of the carbon doping were carried out to determine the effect of different carbon doping profiles on the insulating and dispersive properties of buffers, On devices without field plates, at 4 GHz an output power density of 12 W/mm was obtained with a power-added efficiency (PAE) of 46 % and gain of 14 dB. 15.6 W/mm with PAE of 56 % was obtained from these devices after field-plating. Two-tone linearity measurements of these devices were also carried out. At a C/I 3 level of 30 dBc, the devices measured had an output power of 1.9 W/mm with a PAE of 53 %. The effect of the Al/N ratio in the AlN nucleation layer on buffer leakage was studied. N -rich conditions yielded highly insulating GaN buffers without carbon doping. At 4 GHz, devices without field plates delivered 4.8 W/mm with a PAE of 62 %. At a higher drain bias (50 V), 8.1 W/mm with a PAE of 38 % was achieved.
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As, D. J., E. Tschumak, H. Pöttgen, O. Kasdorf, J. W. Gerlach, H. Karl, and K. Lischka. "Carbon doping of non-polar cubic GaN by CBr4." Journal of Crystal Growth 311, no. 7 (March 2009): 2039–41. http://dx.doi.org/10.1016/j.jcrysgro.2008.11.013.

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Wu, Shan, Xuelin Yang, Zhenxing Wang, Zhongwen Ouyang, Huayang Huang, Qing Zhang, Qiuyu Shang, et al. "Influence of intrinsic or extrinsic doping on charge state of carbon and its interaction with hydrogen in GaN." Applied Physics Letters 120, no. 24 (June 13, 2022): 242101. http://dx.doi.org/10.1063/5.0093514.

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It has been established that the formation of point defects and their behaviors could be regulated by growth details such as growth techniques and growth conditions. In this work, we prove that C doping approaches have great influence on the charge state of [Formula: see text], thus the interaction between H and C in GaN. For GaN with intrinsic C doping, which is realized by reducing the V/III ratio, [Formula: see text] mainly exists in the form of [Formula: see text] charged from the higher concentration of [Formula: see text] and, thus, may attract [Formula: see text] by coulomb interaction. Whereas for the extrinsically C doped GaN with propane as the doping source, the concentration of [Formula: see text] is reduced, and [Formula: see text] mainly exists in neutral charge state and, thus, nearly does not attract H ions. Therefore, we demonstrate that the interplay between H and C atoms is weaker for the extrinsically C doped GaN compared to the intrinsically doped GaN, thus gives a clear picture about the different charge states of [Formula: see text] and the formation of C–H complexes in GaN with different C doping approaches.
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Schmult, S., H. Schürmann, G. Schmidt, P. Veit, F. Bertram, J. Christen, A. Großer, and T. Mikolajick. "Correlating yellow and blue luminescence with carbon doping in GaN." Journal of Crystal Growth 586 (May 2022): 126634. http://dx.doi.org/10.1016/j.jcrysgro.2022.126634.

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Li, Xun, Örjan Danielsson, Henrik Pedersen, Erik Janzén, and Urban Forsberg. "Precursors for carbon doping of GaN in chemical vapor deposition." Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena 33, no. 2 (March 2015): 021208. http://dx.doi.org/10.1116/1.4914316.

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Дисертації з теми "Carbon Doping in GaN"

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Ciarkowski, Timothy A. "Low Impurity Content GaN Prepared via OMVPE for Use in Power Electronic Devices: Connection Between Growth Rate, Ammonia Flow, and Impurity Incorporation." Diss., Virginia Tech, 2019. http://hdl.handle.net/10919/94551.

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Анотація:
GaN has the potential to revolutionize the high power electronics industry, enabling high voltage applications and better power conversion efficiency due to its intrinsic material properties and newly available high purity bulk substrates. However, unintentional impurity incorporation needs to be reduced. This reduction can be accomplished by reducing the source of contamination and exploration of extreme growth conditions which reduce the incorporation of these contaminants. Newly available bulk substrates with low threading dislocations allow for better study of material properties, as opposed to material whose properties are dominated by structural and chemical defects. In addition, very thick films can be grown without cracking due to exact lattice and thermal expansion coefficient match. Through chemical and electrical measurements, this work aims to find growth conditions which reduces contamination without a severe impact on growth rate, which is an important factor from an industry standpoint. The proposed thicknesses of these devices are on the order of one hundred microns and requires tight control of the intentional dopants.
Doctor of Philosophy
GaN is a compound semiconductor which has the potential to revolutionize the high power electronics industry, enabling new applications and energy savings due to its inherent material properties. However, material quality and purity requires improvement. This improvement can be accomplished by reducing contamination and growing under extreme conditions. Newly available bulk substrates with low defects allow for better study of material properties. In addition, very thick films can be grown without cracking on these substrates due to exact lattice and thermal expansion coefficient match. Through chemical and electrical measurements, this work aims to find optimal growth conditions for high purity GaN without a severe impact on growth rate, which is an important factor from an industry standpoint. The proposed thicknesses of these devices are on the order of one hundred microns and requires tight control of impurities.
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Ashourirad, Babak. "HETEROATOM-DOPED NANOPOROUS CARBONS: SYNTHESIS, CHARACTERIZATION AND APPLICATION TO GAS STORAGE AND SEPARATION." VCU Scholars Compass, 2015. http://scholarscompass.vcu.edu/etd/4062.

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Activated carbons as emerging classes of porous materials have gained tremendous attention because of their versatile applications such as gas storage/separations sorbents, oxygen reduction reaction (ORR) catalysts and supercapacitor electrodes. This diversity originates from fascinating features such as low-cost, lightweight, thermal, chemical and physical stability as well as adjustable textural properties. More interestingly, sole heteroatom or combinations of various elements can be doped into their framework to modify the surface chemistry. Among all dopants, nitrogen as the most frequently used element, induces basicity and charge delocalization into the carbon network and enhances selective adsorption of CO2. Transformation of a task-specific and single source precursor to heteroatom-doped carbon through a one-step activation process is considered a novel and efficient strategy. With these considerations in mind, we developed multiple series of heteroatom doped porous carbons by using nitrogen containing carbon precursors. Benzimidazole-linked polymers (BILP-5), benzimidazole monomer (BI) and azo-linked polymers (ALP-6) were successfully transformed into heteroatom-doped carbons through chemical activation by potassium hydroxide. Alternative activation by zinc chloride and direct heating was also applied to ALP-6. The controlled activation/carbonization process afforded diverse textural properties, adjustable heteroatom doping levels and remarkable gas sorption properties. Nitrogen isotherms at 77 K revealed that micropores dominate the porous structure of carbons. The highest Brunauer-Emett-Teller (BET) surface area (4171 m2 g-1) and pore volume (2.3 cm3 g-1) were obtained for carbon synthesized by KOH activation of BI at 700 °C. In light of the synergistic effect of basic heteroatoms and fine micropores, all carbons exhibit remarkable gas capture and selectivity. Particularly, BI and BIPL-5 derived carbons feature unprecedented CO2 uptakes of 6.2 mmol g-1 (1 bar) and 2.1 mmol g-1 (0.15 bar) at 298 K, respectively. The ALP-6 derived carbons retained considerable amount of nitrogen dopants (up to 14.4 wt%) after heat treatment owing to the presence of more stable nitrogen-nitrogen bonds compared to nitrogen-carbon bonds in BILP-5 and BI precursors. Subsequently, the highest selectivity of 62 for CO2/N2 and 11 for CO2/CH4 were obtained at 298 K for a carbon prepared by KOH activation of ALP-6 at 500 °C.
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Kleinsorge, Britta Yvonne. "Doping of amorphous carbon." Thesis, University of Cambridge, 2000. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.621744.

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RIBEIRO, MARIO LUIS PIRES GONCALVES. "CARBON DOPING IN INAIAS EPITAXIAL LAYERS." PONTIFÍCIA UNIVERSIDADE CATÓLICA DO RIO DE JANEIRO, 2002. http://www.maxwell.vrac.puc-rio.br/Busca_etds.php?strSecao=resultado&nrSeq=2651@1.

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Анотація:
COORDENAÇÃO DE APERFEIÇOAMENTO DO PESSOAL DE ENSINO SUPERIOR
ERICSSON DO BRASIL
É reconhecido o potencial de usar carbono como um dopante tipo p em InAlAs devido a obtenção de elevados níveis de dopagem [1,2]. Entretanto, níveis elevados de dopagem só são alcançados em baixas temperaturas de crescimento (Tg inferiores a 600°C). Nessas temperaturas, as camadas crescidas apresentam qualidade ótica inferior quando comparadas com camadas crescidas em temperaturas mais altas, o que é prejudicial para dispositivos de optoeletrônica. Neste trabalho, é apresentada uma investigação sistemática das propriedades de transporte e óticas em camadas de InAlAs dopadas com carbono para diferentes temperaturas de crescimento. É observado que quanto mais baixa for a Tg maior será a incorporação de carbono e maior a atividade elétrica. Este resultado indica que o carbono é incorporado de diversas maneiras, bem como um aceitador raso. O carbono também pode ser incorporado como um doador raso, pois é um dopante anfotérico. Entretanto, este fato, não é suficiente para explicar os resultados de transporte. A diferença entre a concentração Hall e a concentração CV indica a incorporação de doadores profundos. Provavelmente, o carbono participa na formação desses doadores profundos, uma vez que a concentração de doador profundo varia linearmente com a densidade atômica de carbono, determinada pela técnica SIMS. Por outro lado, centros não radiativos são mais facilmente incorporados em baixas Tg e a eficiência da fotoluminescência é reduzida. Essa degradação da fotoluminescência é independente da concentração de carbono, consequentemente, pode-se concluir que essa redução na eficiência da fotoluminescência não está associada à presença de doadores profundos. Com a finalidade de obter um incremento na atividade elétrica do carbono e melhoria na qualidade ótica das camadas, as amostras foram submetidas a tratamentos térmicos. Os tratamentos térmicos aumentaram a concentração de buracos mas não influenciaram na densidade de doadores profundos ou na qualidade ótica das camadas. Para a utilização de InAlAs dopado com carbono em dispositivos, deve-se obter simultaneamente uma boa qualidade ótica e elevada atividade elétrica das camadas.Então, deve-se identificar o doador profundo, que está associado ao carbono, com o objetivo de reduzí-lo ou eliminá-lo e consequentemente, obter um incremento na atividade elétrica das camadas. Desta forma as camadas podem ser crescidas a temperaturas mais altas adequadas para uma emissão de fotoluminescência eficiente. Cálculos teóricos são apresentados de modo a ajudar essa identificação. Outra possibilidade é usar diferentes fontes de arsina em que as moléculas se dissociem em temperaturas mais baixas.
The potential of using carbon as a p-type dopant for InAlAs has already been recognized due to the achievable high hole concentration [1,2]. However, high doping levels are reached only for low growth teperatures (Tg below 600°C). These temperatures produce layers with poor optical quality as compared to those grown at higher temperatures, which can be detrimental for optoeletronic device. In this work we present crystal, transport and optical properties of such layers grown at different temperatures. We find that the lower Tg, the more efficient the carbon incorporation and its electrical activity are. This result indicates that carbon is incorporated in forms different from a shallow acceptor, as well. Carbon can also be incorporated as a shallow donor since it is an amphoteric dopant. However, this alone does not explain the transport results. The difference between the net free charge density determined from capacitance measurements indicates that a deep donor is also incorporated. Carbon most likely participates in the deep donor formation since the inferred deep donor concentration varies linearly with the carbon atomic density measured by SIMS. On the other hand, non- radiative deep levels are more efficiently incorporated as Tg is reduced degrading the photoluminescence characteristics. Such degration is independent of the carbon doping. Therefore, one concludes that the decrease in the photoluminescence efficiency cannot be related to the presence of the deep donor mentioned in the previous paragraph. To further probe the carbon electrical activity and its effect on the optical properties of the layers, the samples have been subjected to a heat-treatment. Annealing the samples increases the hole concentration, but neither affects the deep donor density nor improves the layers optical quality. In order to use carbon doped InAlAs in devices which simultaneously require good optical quality and high electrical activity of the layers, one should identify the deep donor involving carbon in order to try to reduce its concentration or even eliminate it, consequently improving the electrical activity of the layers. In such a way the layers can be grown at higher temperatures, adequate for an efficient photoluminescence emission. Theoretical calculations are being carried out to help with such identification. Another possibility is to use other arsine sources which crack at lower temperatures.
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Khromov, Sergey. "Doping effects on the structural and optical properties of GaN." Doctoral thesis, Linköpings universitet, Tunnfilmsfysik, 2013. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-100760.

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Today there is a strong drive towards higher efficiency light emitters and devices for power electronics based on GaN and its ternary compounds. Device performance can be improved in several ways on the material level. Development of bulk GaN to substitute sapphire and SiC as substrate materials can allow lower defect density epitaxial GaN layers to be grown. Using nonpolar homoepitaxial layers alleviates the problem of polarization fields present in polar GaN epilayers. This thesis advances the field by attacking outstanding problems related to doping and its influence on structural and optical properties of GaN. Optical and structural investigations were performed on bulk GaN grown by halide vapor phase epitaxy (HVPE) and on polar and nonpolar epitaxial GaN grown by metal organic chemical vapor deposition (MOCVD), doped with different impurities: Mg, Si, O or C. Optical characterization was done using photoluminescence (PL), time-resolved photoluminescence (TRPL), and cathodoluminescence (CL) in-situ scanning electron microscope, whereas structural properties were studied by means of transmission electron microscopy (TEM) and atom probe tomography (APT). A correlation between Mg doping levels and stacking fault (SF) concentration in highly Mg-doped c-plane homoepitaxial GaN layers is found. Increasing Mg concentrations, from 2×1018 cm-3 to 5×1019 cm-3, coincides with increasing density of small, 3-10 nm-sized, SFs. Emission lines ascribed to SFs are observed in CL in all the studied samples. The observed SF-related luminescence can be explained by a model where Mg atoms interacting with the nearby SF changes the confinement for holes and leads to a pronounced defectrelated luminescence. Non-polar m-plane homoepitaxial GaN layers with Mg concentration of 2×1018 cm-3 and 3×1019 cm-3 exhibits high density of basal SFs as well as a number of prismatic SFs. Instead of normally observed in nonpolar GaN SF-related broad lines several sharp lines are detected in the 3.36-3.42 eV region. Their relation to donor-acceptor pair recombination (DAP) was dismissed by calculating the DAP energies and fitting with the measured spectra. The sharp lines are tentatively explained by some impurities bound to point defects or SFs. The origin of two Mg related acceptor bound exciton (ABE) peaks in the emission spectra is also proposed: narrower ABE1 peak at 3.466 eV is identified as coming from a substitutional Mg atom. Broader emission at 3.454 eV is deemed to be coming from a Mg acceptor atom perturbed by a nearby SF. Additionally, Mg cluster formation in the highest doped sample ([Mg] = 1×1020 cm-3) was revealed by APT. Simultaneous doping by Si and O was studied for HVPE grown bulk GaN. Doping with O concentration from 1017 cm-3 leads to a decrease in the Si concentration to less than 1016 cm-3. Si incorporation is believed to be suppressed by the competing Ga-vacancy-O incorporation process. Bandgap narrowing by 6 meV due to high doping was observed. Donor bound exciton (DBE) lifetime was obtained from TPRL experimental data and it is found to decrease with increasing doping. In non-polar m-plane homoepitaxial GaN Si doping influences the SF-related luminescence. At moderate Si concentrations excitons are bound to the impurity atoms or impurity-SF complex. Proximity of impurity atoms changes the potential for SF creating localization for charge carriers resulting in SF-related emission. At dopant concentrations higher than the Mott limit screening destroys the carrier interaction and, thus, the exciton localization at impurity-SF complex. Finally, C-doped HVPE grown bulk GaN layers were studied by TEM, CL, and TRPL. Enhanced yellow line (YL) luminescence was observed with increasing C doping. Stability of YL in a wide temperature range (5-300 K) confirms that YL is due to a deep defect, likely CN-ON complex. Low-temperature CL mapping reveals a pit-like structure with different luminescence properties in different areas. DBE emission dominates in CL spectra within the pits while in pit-free areas, in contrast, two ABE lines typical for Mg-doped GaN are observed.
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彭澤厚 and Chak-hau Pang. "A study of Mg doping in GaN during molecular beam epitaxy." Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2001. http://hub.hku.hk/bib/B31226619.

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Pang, Chak-hau. "A study of Mg doping in GaN during molecular beam epitaxy /." Hong Kong : University of Hong Kong, 2001. http://sunzi.lib.hku.hk/hkuto/record.jsp?B25059075.

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Alluqmani, Saleh Marzoq B. "Growth and doping of carbon nanotubes and graphene." Thesis, Durham University, 2015. http://etheses.dur.ac.uk/10949/.

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Single walled carbon nanotubes (SWCNTs) have been doped with nitrogen (N) by two ion-mediated approaches: directly through irradiation with N+ ions and by a novel indirect technique, creating defects through Ar+ ion irradiation which then react with nitrogen upon annealing in a N2 atmosphere. X-ray photoelectron spectroscopy (XPS) was then employed to determine the chemical environment of the nitrogen within the resulting SWCNT material. Depending upon the exact preparation conditions, nitrogen in graphitic (substitutional) pyridinic and pyrrolic configurations could be identified. Nitrogen doping through the novel method was found to introduce the largest concentration of chemisorbed nitrogen within the SWCNT films, dominated by thermodynamically unstable pyrrolic species at low process temperatures (500ºC). The maximum concentration of nitrogen in graphitic sites was achieved by direct ion bombardment, although both XPS and Raman spectroscopy indicated that this approach to doping led to the greatest damage. The ability to vary both bsolute and relative composition of chemisorbed nitrogen species is expected to be valuable for a range of fundamental studies, particularly of the catalytic behaviour of these materials. The growth of graphene on copper under atmospheric pressure using a soft solid source (nonadecane) is reported. It is found that the growth rate is best described by a model which involves the continuous supply of reactive species during the entire growth period. This observation is explained in terms of the formation of decomposition produces which reside on an otherwise clean surface after nonadecane desorption and provide a series of ‘mini carbon sources’ for graphene growth. XPS analysis indicates that, as expected, increased growth temperature leads to greater graphitisation at the surface (and hence graphene ‘quality’) which is not accompanied by any substantial change in island size and coverage. It is found that although graphene islands can be produced it is not possible to form continuous films, demonstrating the limitations of this technique. Although limited in some ways, the use of soft solid precursors for graphene growth allows the ready introduction of potential dopant materials. XPS, Raman and SEM data provide strong evidence that a PDMS precursor can be employed in atmospheric pressure solid-phase CVD to produce graphene heavily doped with silicon, which has not been previously achieved. Since silicon-doped graphene is predicted to possess a band gap related to the Si concentration, this may provide a route to produce a graphene-based material of use in digital electronics.
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Francis, Smita. "Optimisation of doping profiles for mm-wave GaAs and GaN gunn diodes." Thesis, Cape Peninsula University of Technology, 2017. http://hdl.handle.net/20.500.11838/2568.

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Thesis (DTech (Electrical Engineering))--Cape Peninsula University of Technology, 2017.
Gunn diodes play a prominent role in the development of low-cost and reliable solid-state oscillators for diverse applications, such as in the military, security, automotive and consumer electronics industries. The primary focus of the research presented here is the optimisation of GaAs and GaN Gunn diodes for mm-wave operations, through rigorous Monte Carlo particle simulations. A novel, empirical technique to determine the upper operational frequency limit of devices based on the transferred electron mechanism is presented. This method exploits the hysteresis of the dynamic velocity-field curves of semiconductors to establish the upper frequency limit of the transferred electron mechanism in bulk material that supports this mechanism. The method can be applied to any bulk material exhibiting negative differential resistance. The simulations show that the upper frequency limits of the fundamental mode of operation for GaAs Gunn diodes are between 80 GHz and 100 GHz, and for GaN Gunn diodes between 250 GHz and 300 GHz, depending on the operating conditions. These results, based on the simulated bulk material characteristics, are confirmed by the simulated mm-wave performance of the GaAs and GaN Gunn devices. GaAs diodes are shown to exhibit a fundamental frequency limit of 90 GHz, but with harmonic power available up to 186_GHz. Simulated GaN diodes are capable of generating appreciable output power at operational frequencies up to 250 GHz in the fundamental mode, with harmonic output power available up to 525 GHz. The research furthermore establishes optimised doping profiles for two-domain GaAs Gunn diodes and single- and two-domain GaN Gunn diodes. The relevant design parameters that have been optimised, are the dimensions and doping profile of the transit regions, the width of the doping notches and buffer region (for two-domain devices), and the bias voltage. In the case of GaAs diodes, hot electron injection has also been implemented to improve the efficiency and output power of the devices. Multi-domain operation has been explored for both GaAs and GaN devices and found to be an effective way of increasing the output power. However, it is the opinion of the author that a maximum number of two domains is feasible for both GaAs and GaN diodes due to the significant increase in thermal heating associated with an increase in the number of transit regions. It has also been found that increasing the doping concentration of the transit region exponentially over the last 25% towards the anode by a factor of 1.5 above the nominal doping level enhances the output power of the diodes.
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Khromov, Sergey. "The Effect of Mg Doping on Optical and Structural Properties of GaN." Licentiate thesis, Linköpings universitet, Tunnfilmsfysik, 2012. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-75428.

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Mg is the most commonly used p-type dopant for GaN, however the impact of Mg incorporation on structural, morphological and optical properties of GaN is still not fully understood. Another research challenge is to understand and improve the properties of nonpolar GaN as it allows the fabrication of more efficient optoelectronic devices due to the absence of polarization fields. Thus, the aim of this thesis was to explore the effect of Mg doping on polar c-plane GaN in Paper 1 and nonpolar m-plane GaN in Paper 2. The samples were grown by metal-organic vapor phase epitaxy with varying Mg content on free-standing GaN substrates. The studies were done by transmission electron microscopy (TEM) and low temperature cathodoluminescence (CL) with the aim to correlate the optical and structural data obtained by these techniques. Polar c-plane GaN:Mg layers exhibit such structural defects as stackingfaults (SF) of a small size (5-10 nm). The basal plane SF (BSF)density was estimated to be ~ 105 − 106 cm−1 increasing with Mgconcentrations. Comparison between as-grown and annealed sampleshas not shown significant difference in structural or optical properties.Characteristic broad emission lines observed in CL in the rangeof 3.29 − 3.41 eV have been attributed to SF-related emissions byanalogy with nonpolar undoped GaN films grown heteroepitaxially.Acceptor bound exciton (ABE) emission and SF-related peaks havedemonstrated metastability. CL mapping performed on the TEMsamples at the energies corresponding to SF-related peaks has confirmedthat the origin of these lines is associated with Mg-doped GaNlayers. In nonpolar m-plane GaN:Mg layers similar BSFs have been observed. In addition more extended BSFs and prismatic SFs wereidentified at the interface with the GaN substrate. For the m-planesamples with Mg concentration of ~ 1019 cm−3 a number of fine CLlines have been detected in the region of 3.3-3.4 eV. Their shape andappearance were unlike the SF-related emissions in the case of c-planeGaN discussed in Paper 1. These peaks are not likely to be associatedwith donor-acceptor pair (DAP) recombination as has been proved byestimation of the separated DAP energies and by CL mapping experiment.A tentative explanation is given to these peaks as being relatedto excitons bound to some low symmetry acceptor defect centers.
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Книги з теми "Carbon Doping in GaN"

1

Bulyarskiy, Sergey, and Alexandr Saurov, eds. Doping of Carbon Nanotubes. Cham: Springer International Publishing, 2017. http://dx.doi.org/10.1007/978-3-319-55883-7.

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2

Di qiu shi fang CO2 ji qi yao gan yan jiu jin zhan. Beijing Shi: Dian zi gong ye chu ban she, 2011.

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3

Bulyarskiy, Sergey, and Alexandr Saurov. Doping of Carbon Nanotubes. Springer, 2018.

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4

Bulyarskiy, Sergey, and Alexandr Saurov. Doping of Carbon Nanotubes. Springer International Publishing AG, 2017.

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5

Saito, R., A. Jorio, J. Jiang, K. Sasaki, G. Dresselhaus, and M. S. Dresselhaus. Optical properties of carbon nanotubes and nanographene. Edited by A. V. Narlikar and Y. Y. Fu. Oxford University Press, 2017. http://dx.doi.org/10.1093/oxfordhb/9780199533053.013.1.

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This article examines the optical properties of single-wall carbon nanotubes (SWNTs) and nanographene. It begins with an overview of the shape of graphene and nanotubes, along wit the use of Raman spectroscopy to study the structure and exciton physics of SWNTs. It then considers the basic definition of a carbon nanotube and graphene, focusing on the crystal structure of graphene and the electronic structure of SWNTs, before describing the experimental setup for confocal resonance Raman spectroscopy. It also discusses the process of resonance Raman scattering, double-resonance Raman scattering, and the Raman signals of a SWNT as well as the dispersion behavior of second-order Raman modes, the doping effect on the Kohn anomaly of phonons, and the elastic scattering of electrons and photons. The article concludes with an analysis of excitons in SWNTs and outlines future directions for research.
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6

Hayazawa, Norihiko, and Prabhat Verma. Nanoanalysis of materials using near-field Raman spectroscopy. Edited by A. V. Narlikar and Y. Y. Fu. Oxford University Press, 2017. http://dx.doi.org/10.1093/oxfordhb/9780199533053.013.10.

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This article describes the use of tip-enhanced near-field Raman spectroscopy for the characterization of materials at the nanoscale. Tip-enhanced near-field Raman spectroscopy utilizes a metal-coated sharp tip and is based on surface-enhanced Raman scattering (SERS). Instead of the large surface enhancement from the metallic surface in SERS, the sharp metal coated tip in the tip-enhanced Raman scattering (TERS) provides nanoscaled surface enhancement only from the sample molecules in the close vicinity of the tip-apex, making it a perfect technique for nanoanalysis of materials. This article focuses on near-field analysis of some semiconducting nanomaterials and some carbon nanostructures. It first considers SERS analysis of strained silicon and TERS analysis of epsilon-Si and GaN thin layers before explaining how to improve TERS sensitivity and control the polarization in detection for crystalline materials. It also discusses ways of improving the spatial resolution in TERS.
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Частини книг з теми "Carbon Doping in GaN"

1

Mitura, Stanisław, Jan Szmidt, and Aleksandra Sokołowska. "Doping of Diamond-Like Carbon Films." In Wide Band Gap Electronic Materials, 235–42. Dordrecht: Springer Netherlands, 1995. http://dx.doi.org/10.1007/978-94-011-0173-8_23.

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2

Zolper, J. C. "Ion Implantation Doping and Isolation of III-Nitride Materials." In GaN and Related Materials, 371–98. London: CRC Press, 2021. http://dx.doi.org/10.1201/9781003211082-12.

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3

Saurov, Alexandr. "Adsorption and Doping as Methods for the Electronic Regulation Properties of Carbon Nanotubes." In Doping of Carbon Nanotubes, 1–6. Cham: Springer International Publishing, 2017. http://dx.doi.org/10.1007/978-3-319-55883-7_1.

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4

Bulyarskiy, Sergey, and Alexandr S. Basaev. "Thermodynamics and Kinetics of Adsorption and Doping of a Graphene Plane of Carbon nanotubes and Graphene." In Doping of Carbon Nanotubes, 7–56. Cham: Springer International Publishing, 2017. http://dx.doi.org/10.1007/978-3-319-55883-7_2.

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5

Bulyarskiy, Sergey, Alexandr S. Basaev, and Darya A. Bogdanova. "Interaction of Hydrogen with a Graphene Plane of Carbon Nanotubes and Graphene." In Doping of Carbon Nanotubes, 57–101. Cham: Springer International Publishing, 2017. http://dx.doi.org/10.1007/978-3-319-55883-7_3.

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6

Bulyarskiy, Sergey, Alexandr S. Basaev, Darya A. Bogdanova, and Alexandr Pavlov. "Oxygen Interaction with Electronic Nanotubes." In Doping of Carbon Nanotubes, 103–13. Cham: Springer International Publishing, 2017. http://dx.doi.org/10.1007/978-3-319-55883-7_4.

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7

Saurov, Alexandr, Sergey Bulyarskiy, Darya A. Bogdanova, and Alexandr Pavlov. "Nitrogen Interaction with Carbon Nanotubes: Adsorption and Doping." In Doping of Carbon Nanotubes, 115–69. Cham: Springer International Publishing, 2017. http://dx.doi.org/10.1007/978-3-319-55883-7_5.

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8

Saurov, Alexandr, Sergey Bulyarskiy, and Alexandr Pavlov. "Carbon Nanotube Doping by Acceptors. The p–п Junction Formation." In Doping of Carbon Nanotubes, 171–82. Cham: Springer International Publishing, 2017. http://dx.doi.org/10.1007/978-3-319-55883-7_6.

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9

Susi, Toma, and Paola Ayala. "Doping Carbon Nanomaterials with Heteroatoms." In Carbon Nanomaterials for Advanced Energy Systems, 133–61. Hoboken, NJ: John Wiley & Sons, Inc, 2015. http://dx.doi.org/10.1002/9781118980989.ch4.

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10

Hu, Yating. "Nitrogen Doping of Mesoporous Carbon Materials." In Springer Theses, 35–47. Singapore: Springer Singapore, 2018. http://dx.doi.org/10.1007/978-981-10-8342-6_3.

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Тези доповідей конференцій з теми "Carbon Doping in GaN"

1

Shanbhag, Ajay, Sruthi M P, Farid Medjdoub, Anjan Chakravorty, Nandita DasGupta, and Amitava DasGupta. "Optimized Buffer Stack with Carbon-Doping for Performance Improvement of GaN HEMTs." In 2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS). IEEE, 2021. http://dx.doi.org/10.1109/bcicts50416.2021.9682203.

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2

Meneghini, M., D. Bisi, I. Rossetto, C. De Santi, A. Stocco, O. Hilt, E. Bahat-Treidel, et al. "Trapping processes related to iron and carbon doping in AlGaN/GaN power HEMTs." In SPIE OPTO, edited by Jen-Inn Chyi, Hiroshi Fujioka, and Hadis Morkoç. SPIE, 2015. http://dx.doi.org/10.1117/12.2079586.

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3

Cioni, M., G. Giorgino, A. Chini, C. Miccoli, M. E. Castagna, M. Moschetti, C. Tringali, and F. Iucolano. "Evidence of Carbon Doping Effect on VTH Drift and Dynamic-RON of 100V p-GaN Gate AlGaN/GaN HEMTs." In 2023 IEEE International Reliability Physics Symposium (IRPS). IEEE, 2023. http://dx.doi.org/10.1109/irps48203.2023.10117585.

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4

Nesov, S. N., Yu A. Stenkin, S. N. Povoroznuyk, and A. M. Badamshin. "Nitrogen doping of carbon nanotubes for tuning electronic and electrochemistry characteristics." In OIL AND GAS ENGINEERING (OGE-2022). AIP Publishing, 2023. http://dx.doi.org/10.1063/5.0140264.

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5

Moens, P., P. Vanmeerbeek, A. Banerjee, J. Guo, C. Liu, P. Coppens, A. Salih, et al. "On the impact of carbon-doping on the dynamic Ron and off-state leakage current of 650V GaN power devices." In 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD). IEEE, 2015. http://dx.doi.org/10.1109/ispsd.2015.7123383.

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6

Kappes, Branden B., Abbas Ebnonnasir, Suneel Kodambaka, and Cristian V. Ciobanu. "Orientation Dependent Binding Energy of Graphene on Pd(111)." In ASME 2011 International Mechanical Engineering Congress and Exposition. ASMEDC, 2011. http://dx.doi.org/10.1115/imece2011-65217.

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Graphene, a two-dimensional crystalline sheet of carbon, has generated considerable attention owing to its ultra-thin geometry, high carrier mobility and tunable band gap, with potential applications in high-performance, low-power electronics and as transparent electrodes. Since graphene–based devices require metal (or metallic) contacts, knowledge of the structural and electronic properties of the metal-graphene interfaces is essential. Previous theoretical studies of graphene-metal contacts indicate that their electronic properties depend on the metal-graphene binding energies. For example, strongly interacting metals can induce a charge transfer from or to graphene, resulting in p- or n-type doping. Here, using Pd(111) as a example substrate, we focus on understanding the influence of the orientation of graphene on its binding to the substrate.
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7

Zolper, J. C. "Implantation doping of GaN." In The fourteenth international conference on the application of accelerators in research and industry. AIP, 1997. http://dx.doi.org/10.1063/1.52624.

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8

Zhang, Xinxin, Gaosheng Wei, and Fan Yu. "Influence of Some Parameters on Effective Thermal Conductivity of Nano-Porous Aerogel Super Insulator." In ASME 2005 Summer Heat Transfer Conference collocated with the ASME 2005 Pacific Rim Technical Conference and Exhibition on Integration and Packaging of MEMS, NEMS, and Electronic Systems. ASMEDC, 2005. http://dx.doi.org/10.1115/ht2005-72192.

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Based on the open-cell nano-porous structure features, a cubic array of nano-spheres unit cell model describing the coupled conduction of gas and solid in aerogel super insulator is developed. By one-dimensional heat conduction analysis in the unit cell, the effective thermal conductivity expression is obtained. The results show that the model matches well with the experimental data and nano-porous structure, nanometer size effect of solids as well as the very high specific surface area are the key factors make aerogel have very low thermal conductivity. There exists an optimal density value where the thermal conductivity of aerogel is minimum. Thermal radiative heat transfer is the dominating heat transfer mechanism of aerogel at an elevated temperature. It can decrease the thermal conductivity value of aerogel effectively at an elevated temperature by doping carbon or other matters which can strongly absorb infrared light at 3∼8 μm.
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9

Czerw, R. "Substitutional Doping of Carbon Nanotubes." In STRUCTURAL AND ELECTRONIC PROPERTIES OF MOLECULAR NANOSTRUCTURES: XVI International Winterschool on Electronic Properties of Novel Materials. AIP, 2002. http://dx.doi.org/10.1063/1.1514080.

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10

Biao Li, Benkang Chang, Xiaoqian Fu, Yujie Du, Xiaohui Wang, and Xiaoqing Du. "Comparative Study of uniform-doping and gradient-doping NEA GaN photocathodes." In 8th International Vacuum Electron Sources Conference and Nanocarbon (2010 IVESC). IEEE, 2010. http://dx.doi.org/10.1109/ivesc.2010.5644326.

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Звіти організацій з теми "Carbon Doping in GaN"

1

Speck, James S. Systematic Studies of Carbon Doping in High Quality GaN Grown by Molecular Beam Epitaxy. Fort Belvoir, VA: Defense Technical Information Center, December 2004. http://dx.doi.org/10.21236/ada430009.

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2

Wong, Raechelle Kimberly. P-type doping of GaN. Office of Scientific and Technical Information (OSTI), April 2000. http://dx.doi.org/10.2172/764386.

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3

Lambrecht, Walter R. Rare-Earth Doping and Co-Doping of GaN for Magnetic and Luminescent Applications. Fort Belvoir, VA: Defense Technical Information Center, August 2010. http://dx.doi.org/10.21236/ada533567.

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4

Wicks, Gary W. Alternative Approaches to p-type Doping of GaN. Fort Belvoir, VA: Defense Technical Information Center, March 2000. http://dx.doi.org/10.21236/ada382954.

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5

Suvkhanov, A., W. Wu, K. Price, N. Parikh, E. Irene, J. Hunn, D. Thomson, R. F. Davis, and L. Krasnobaev. Doping of GaN by ion implantation: Does It Work? Office of Scientific and Technical Information (OSTI), April 1998. http://dx.doi.org/10.2172/654192.

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6

Vladimir Dmitriev. Ultra High p-doping Material Research for GaN Based Light Emitters. Office of Scientific and Technical Information (OSTI), June 2007. http://dx.doi.org/10.2172/966358.

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7

Zolper, J. C., R. G. Wilson, S. J. Pearton, and R. A. Stall. P- and N-type implantation doping of GaN with Ca and O. Office of Scientific and Technical Information (OSTI), May 1996. http://dx.doi.org/10.2172/238549.

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8

Moll, Amy Jo. Carbon doping of III-V compound semiconductors. Office of Scientific and Technical Information (OSTI), September 1994. http://dx.doi.org/10.2172/10196996.

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9

Armstrong, Andrew, and Daniel Feezell. High Voltage Regrown GaN P-N Diodes Enabled by Defect and Doping Control. Office of Scientific and Technical Information (OSTI), April 2022. http://dx.doi.org/10.2172/1862286.

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10

Liu, Jie. Optimizing the Binding Energy of Hydrogen on Nanostructured Carbon Materials through Structure Control and Chemical Doping. Office of Scientific and Technical Information (OSTI), February 2011. http://dx.doi.org/10.2172/1004174.

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