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Статті в журналах з теми "Caractérisations pour la microélectronique":
Debéda, H., A. Gracia, M. Dematos, I. Favre, B. Plano, J. Tomas, R. Tan, C. Rouabhi, and M. Respaud. "Procédé de fabrication d’un circuit redresseur de puissance : de la fabrication de diodes Silicium à leur assemblage sur substrat métallisé d’alumine." J3eA 21 (2022): 1016. http://dx.doi.org/10.1051/j3ea/20221016.
Alloncle, A. P., B. Thomas, D. Grojo, Ph Delaporte, M. Sentis, S. Sanaur, M. Barret, and Ph Collot. "Ablation laser pour la microélectronique plastique." Journal de Physique IV (Proceedings) 138, no. 1 (December 2006): 213–21. http://dx.doi.org/10.1051/jp4:2006138024.
Ali, Mohamad, and Mohamed El-Gohary. "Caractérisations mécaniques des charnières pour meuble." MATEC Web of Conferences 261 (2019): 02006. http://dx.doi.org/10.1051/matecconf/201926102006.
Boulmer, J., D. Débarre, A. Grouillet, and D. Lenoble. "Dopage laser pour la microélectronique du futur." Le Journal de Physique IV 11, PR7 (October 2001): Pr7–103—Pr7–106. http://dx.doi.org/10.1051/jp4:2001733.
Marris-Morini, Delphine, Carlos Alonso-Ramos, Xavier Le Roux, and Laurent Vivien. "La photonique silicium / germanium pour la spectroscopie moyen infrarouge." Photoniques, no. 98 (September 2019): 20–23. http://dx.doi.org/10.1051/photon/20199820.
Weitzman, Leora. "Frege on the Individuation of Thoughts." Dialogue 36, no. 3 (1997): 563–74. http://dx.doi.org/10.1017/s0012217300017066.
Bonnaud, Olivier. "Les enjeux industriels, économiques et académiques de la filière micro-électronique." J3eA 21 (2022): 2011. http://dx.doi.org/10.1051/j3ea/20222011.
Rousseaux, F. "Intérêt des sources X pour la production en microélectronique." Annales de Physique 17 (June 1992): 133–40. http://dx.doi.org/10.1051/anphys/1992026.
Charles, Jean-Pierre, Ahmed Haddi, Alain Maouad, Hazri Bakhtiar, Abdellatif Zerga, Alain Hoffmann, and Pierre Mialhe. "La Jonction du Solaire à la Microélectronique." Journal of Renewable Energies 3, no. 1 (June 30, 2000): 1–16. http://dx.doi.org/10.54966/jreen.v3i1.906.
Pradarelli, B., P. Nouet, P. Benoit, and O. Bonnaud. "Actions de vulgarisation du guichet national de formation continue du GIP-CNFM." J3eA 18 (2019): 1022. http://dx.doi.org/10.1051/j3ea/20191022.
Дисертації з теми "Caractérisations pour la microélectronique":
Kanoun, Mehdi. "Caractérisations électriques des structures MOS à nanocristaux de Ge pour des applications mémoires non volatiles." Lyon, INSA, 2004. http://theses.insa-lyon.fr/publication/2004ISAL0069/these.pdf.
The scaling down of the silicon devices predicted by the Moor’s law will cause physical and technological limitations. Indeed, the limit of the MOS transistor’s gate length is situated in the range of 8 nm (2010-2015). For the non volatile memories based on SiO2 insulator, the critical parameter is the tunnel oxide thickness which is situate around 7-8 nm (2008). For thinner oxides, the device loss its retention time characteristic (10 years). For these reasons, other ways must be envisaged. The few electron electronics seem to be a good candidate for this task, in particular for the memory applications. Indeed, Tiwari and collaborators had proposed in 1995, to replace poly-silicon floating gate by Si nanocrystals. The utilization of a granular based silicon nanocrystals floating gate allows the reduction of the tunnel oxide thickness. In order to ameliorate the retention time, it is more interesting to integrate Ge nanocrystals rather than the silicon ones thanks to their smaller band gap. In this context, this work proposes an electrical study of the electronic properties of Ge nanocrystals embedded in the SiO2 matrix for non volatile memory application. The first chapter is devoted to the description of the electronic properties change of the Ge nanocrystals due to the reduction of their size. In addition, the envisaged device is presented with its technological process. In the second chapter, different method analyses are reported for Ge isolation in a SiO2 matrix. The third chapter is dedicated to the transport mechanisms in Ge dots. Finally, in the forth chapter we will present the charge and discharge kinetic studies in Ge islands. These studies have permitted the optimization of the technologic parameters for the non volatile memory device realization as well as demonstrate the potential presented by the Ge dots for P type MOS memories
Lintanf, Amélie. "Dépôts par ESD et ALD et caractérisations physico-chimiques de couches d'oxydes à l'échelle nanométrique pour la microélectronique." Grenoble INPG, 2008. http://www.theses.fr/2008INPG0088.
Perat, Olivier. "Méthodologie de caractérisation de paramètres thermomécaniques de matériaux pour la microélectronique." Toulouse, INSA, 2002. http://www.theses.fr/2002ISAT0009.
Optimisation of electronic circuits is mandatory to meet performance, reliability and cost requirements. Our investigation, performed in a Motorola, LAAS/CNRS, Région Midi-Pyrénées common laboratory, concerns the thermal fatigue induced failures of components. Our work deals with the development of a characterisation method of two thermomechanical parameters: the Young's modulus and the coefficient of thermal expansion. Starting from an analytical modelling of thermomechanical stresses, the method is based on the thermal deflection of bilayer cantilevers. Using a single experimental set-up, this method allows the determination of the two parameters as a function of temperature, with a fairly good resolution. Bilayer cantilevers, processed in a clean room, have led to the validation of the method and have provided interesting results concerning study of the thermal fatigue behaviour of heterogeneous assemblies
Fossati, Caroline. "Optique pour la Microélectronique : du capteur au traitement de l'image." Habilitation à diriger des recherches, Université Paul Cézanne - Aix-Marseille III, 2008. http://tel.archives-ouvertes.fr/tel-00384815.
Deux thématiques de recherche sont abordées :
- La caractérisation optique de défauts submicroniques dans les matériaux, qui a constitué, dans la continuité de ma thèse, la première partie de mes activités : caractérisation de précipités dans le Silicium par le développement d'un microscope infrarouge à balayage ; développement d'un microscope photo thermique pour la détection de nano défauts absorbants précurseurs d'endommagement dans les couches minces optique.
- L'optique pour la microélectronique, thématique initiée en 2000 au laboratoire, qui aborde la modélisation optique de capteurs d'images en technologie CMOS en vue d'adapter leur structure aux contraintes de réflexion et diffraction optique liées à la réduction de taille des pixels imposée par le marché.
Sont aussi concernés les masques avancés pour la photolithographie optique, et l'adaptation de techniques de traitement du signal et des images à la modélisation de corrections optiques de proximité (OPC) qu'il faut appliquer sur les masques pour corriger les effets de la diffraction dans le cadre de la diminution de taille des composants.
Des projets de recherche orientés sur l'application des capteurs et du traitement multidimensionnel du signal pour des applications médicales et de sécurité sont aussi présentés.
Thomas, Maryline. "Caractérisation et développement d'architectures 3 D pour capacités métal-isolant-métal intégrant des électrodes en cuivre et des diélectriques à permittivité élevée." Grenoble INPG, 2007. http://www.theses.fr/2007INPG0150.
Laloum, David. "Tomographie par rayons X haute résolution : application à l'intégration 3D pour la microélectronique." Thesis, Université Grenoble Alpes (ComUE), 2015. http://www.theses.fr/2015GREAY067/document.
In this thesis, an original non-destructive 3D characterization technique has been developed : the X-ray tomography hosted in a scanning electron microscope. This instrument is not widely used in the microelectronics field. This computed tomography (CT) system has been used for the high resolution analysis of metallic interconnections such as copper pillars and through silicon vias (TSVs). These components are widely used in the field of 3D integration to make vertical stacks of interconnected chips.The most significant contributions of this thesis are : (1) the enhancement of the analytical capabilities of the instrument. Many studies – simulations and experiments – have been performed in order to determine and improve the 2D and 3D resolutions of this imaging system. It has been shown that the 2D resolution of this instrument can reach 60 nanometers. The quality of the projections and reconstruction has also been improved through the implementation of iterative reconstruction algorithms and various projections alignment methods. (2) The reduction of the scanning time by a factor 3 through the implementation of constrained reconstruction techniques such as the reconstruction method based on the total variation minimization. (3) The application of effective correction algorithms for removing reconstruction artefacts due to the polychromaticity of the X-ray beam. (4) The application of all these reconstruction methods and algorithms on real cases encountered by materials engineers
Cherkaoui, Karim. "Caractérisation de matériaux semi-isolants par spectroscopie de transitoire de courant photoinduit : matériaux InP dopés Fe pour la micro-optoélectronique et CdZnTe pour la détection nucléaire." Lyon, INSA, 1998. http://www.theses.fr/1998ISAL0104.
Semi-insulating materials show an increasing interest in many application fields. For instance high resistivity InP and CdZnTe substrates are very promising for micro-optoelectronic circuits and nuclear detectors respectively. We have characterized both materials by means of Photo-Induced Current Transient Spectroscopy. The aim of the first part of this study is to analyze the defects in annealed InP substrates to understand the compensation phenomena in this material. We have detected two levels at 0. 2 eV and 0. 4 eV induced by the thermal treatment. We have noticed the presence of iron in all samples even in non intentionally doped ones. Therefore, one must take into account the Iron contribution to fully understand the compensation mechanism in the annealed InP substrates. In the second part, we have studied the CdZnTe material grown by the High Pressure Bridgman method to point out the defects which may affect the detector performance. Three levels detected near the midgap seem to affect the performance of the first studied detectors. We have characterized a series of detectors in which we have only detected one midgap level. We explain this by an improved material quality. This level is probably responsible of the semi-insulating character of this material. Finally, we correlate the detection performance of a series of samples with the presence of two electron traps at low temperature
Baudry, Ingwild. "Caractérisation des process de fabrication microélectroniques pour l'éco-conception des futures technologies." Phd thesis, Université de Grenoble, 2013. http://tel.archives-ouvertes.fr/tel-00957329.
Gonon, Nathalie. "Procédés thermiques rapides pour la réalisation de diélectriques ultra-minces sur silicium. Caractérisation par spectroellipsométrie." Lyon, INSA, 1993. http://www.theses.fr/1993ISAL0074.
Thermal oxidation of silicon is the more important process for integrated circuit fabrication. The trend towards even smaller and faster devices has resulted in a demand for gate oxides of thickness of less the 10 nm. More recently, a growth technique at very high temperatures for oxidation times of a few second has been developed with the advent of Rapid Thermal Processing. Very thin oxides films were achieved by rapid thermal oxidation in pure 02 or N2O stagnant atmosphere. RTO films thickness and refractive index were obtained by spectroscopic ellipsometry spectroellipsometiy investigation of RTO films revealed a growth rate enhancement at the initial stage of oxidation and an oxidation refractive index higher than chose of standard Si02. It can be noted that for N 0 kinetics, the growth rate was lower than for 02 kinetics. Complementary analysis (Auger spectroscopy, electrical properties. . . ) confirm the high value of the refractive index and reveal an interfacial problem. These analysis allow to express hypothesis to explain the high refractive index (densified SiO2 films, presence of an interfacial SiOx films, excess of silicon at the interface) and the growth of the RTO oxide (volumetric growth)
Chang, Youjean. "Etude de caractérisation de matériaux diélectriques de grille à forte permittivité pour les technologies CMOS ultimes." Lyon, INSA, 2003. http://theses.insa-lyon.fr/publication/2003ISAL0035/these.pdf.
This thesis presented the study of new gate dielectric materials with high permittivity ("high-k") for their integration into gate insulator of ultimate CMOS technology. Indeed, the aggressive miniaturization of the devices micro-electronics comes up today against the limits of SiO2 and will impose in the term of 2 or 3 years, its replacement by an insulator with higher permittivity, which constitutes a true technological rupture. Among the materials the most promising candidates, Al2O3 ("modeste–k"), HfO2 ("high-k") and SrTiO3 ("very high-k") represent potential solutions with respectively short, medium and long term. The principal problem of this integration is to reach equivalent oxide thickness (EOT) lower than 1 nm while maintaining leakage currents acceptable for the applications considered. The blocking points are in the technological compatibility of these materials, their thermodynamic stability, the control of the interfacial layer and its electrical properties. Thin dielectric films studied in this work has been deposited by two industrial techniques, atomic layer chemical vapour deposition (ALD) for Al2O3 and HfO2 or liquid injection metal organic chemical vapour deposition (MOCVD) for SrTiO3. We proved the very good thermal stability of Al2O3 which preserves an amorphous character up to annealing temperature higher to 800°C. A transition layer, mainly made up of SiO2 or (and) silicate, is observed at the interface between Al2O3 and Si. This layer is formed during the deposition and thermal treatments after deposition and it depends strongly on the preparation of the substrate before deposition. A similar behavior is observed for HfO2. We also show that the electrical properties of these materials (dielectric constant, EOT, flat band voltage, charges in oxide, interface density state) change in function of dielectric film thickness, surface preparation, or of annealing conditions. With comparable EOT, we obtain leakage currents lower than SiO2 for the three types of materials. The detailed analysis of the electrical parameters show that the principal challenges lie in the control of the interfacial layer and the reduction of the charges and interface state density which are proved to be currently one of the principal sources of mobility degradation
Частини книг з теми "Caractérisations pour la microélectronique":
CHATELIN, Simon, Philippe GARTEISER, and Bernard E. VAN BEERS. "Biomécanique du foie : caractérisations, modélisations et applications cliniques." In Mécanique des tissus vivants, 27–59. ISTE Group, 2023. http://dx.doi.org/10.51926/iste.9160.ch1.
VALLET, Yves, and Cédric LAURENT. "Biomécanique de la peau : caractérisations, modélisations et applications au scalp." In Mécanique des tissus vivants, 61–93. ISTE Group, 2023. http://dx.doi.org/10.51926/iste.9160.ch2.
Тези доповідей конференцій з теми "Caractérisations pour la microélectronique":
Lacombat, M. "Équipements optiques pour la fabrication microélectronique." In Systèmes optiques. Les Ulis, France: EDP Sciences, 1992. http://dx.doi.org/10.1051/sfo/1992010.