Добірка наукової літератури з теми "Capping-protection layer"
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Статті в журналах з теми "Capping-protection layer"
Abdelhafiz, Ali, Adam Vitale, Parker Buntin, Ben deGlee, Corey Joiner, Alex Robertson, Eric M. Vogel, Jamie Warner, and Faisal M. Alamgir. "Epitaxial and atomically thin graphene–metal hybrid catalyst films: the dual role of graphene as the support and the chemically-transparent protective cap." Energy & Environmental Science 11, no. 6 (2018): 1610–16. http://dx.doi.org/10.1039/c8ee00539g.
Повний текст джерелаLIN, QIJING, WEIXUAN JING, ZHUANGDE JIANG, NA ZHAO, ZIRONG WU, CHENYING WANG, and SHUMING YANG. "FORMATION OF TRIANGULAR Cu MICROCRYSTALS IN Ti/Cu/Si THIN FILMS DURING ANNEALING." Surface Review and Letters 25, no. 05 (July 2018): 1850097. http://dx.doi.org/10.1142/s0218625x1850097x.
Повний текст джерелаVassilevski, K. V., N. G. Wright, I. P. Nikitina, A. B. Horsfall, A. G. O'Neill, M. J. Uren, K. P. Hilton, A. G. Masterton, A. J. Hydes, and C. M. Johnson. "Protection of selectively implanted and patterned silicon carbide surfaces with graphite capping layer during post-implantation annealing." Semiconductor Science and Technology 20, no. 3 (February 4, 2005): 271–78. http://dx.doi.org/10.1088/0268-1242/20/3/003.
Повний текст джерелаHwan Eun, Jae, Jung Heon Lee, Soo Gil Kim, Myung Yoon Um, Sun Young Park, and Hyeong Joon Kim. "The protection of MgO film against hydration by using Al2O3 capping layer deposited by magnetron sputtering method." Thin Solid Films 435, no. 1-2 (July 2003): 199–204. http://dx.doi.org/10.1016/s0040-6090(03)00362-6.
Повний текст джерелаSeetharaman, Krishnan, Bart van Velzen, Johannes van Wingerden, Hans van Zadelhoff, Cadmus Yuan, Frank Rietveld, Coen Tak, Joost van Beek, Peter H. C. Magnée, and Herman C. W. Beijerinck. "A Robust Thin-Film Wafer-Level Packaging Approach for MEMS Devices." Journal of Microelectronics and Electronic Packaging 7, no. 3 (July 1, 2010): 175–80. http://dx.doi.org/10.4071/imaps.270.
Повний текст джерелаSeetharaman, Krishnan, Bart van Velzen, Hans van Zadelhoff, Cadmus Yuan, Frank Rietveld, Coen Tak, Joost van Beek, et al. "A Robust Wafer-Level Capping Approach for MEMS Devices." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2010, DPC (January 1, 2010): 000891–924. http://dx.doi.org/10.4071/2010dpc-tp21.
Повний текст джерелаGuo, Huaixin, Yizhuang Li, Xinxin Yu, Jianjun Zhou, and Yuechan Kong. "Thermal Performance Improvement of AlGaN/GaN HEMTs Using Nanocrystalline Diamond Capping Layers." Micromachines 13, no. 9 (September 7, 2022): 1486. http://dx.doi.org/10.3390/mi13091486.
Повний текст джерелаOgorzałek, Zuzanna, Bartłomiej Seredyński, Sławomir Kret, Adam Kwiatkowski, Krzysztof P. Korona, Magdalena Grzeszczyk, Janusz Mierzejewski, et al. "Charge transport in MBE-grown 2H-MoTe2 bilayers with enhanced stability provided by an AlOx capping layer." Nanoscale 12, no. 31 (2020): 16535–42. http://dx.doi.org/10.1039/d0nr03148h.
Повний текст джерелаSelbmann, Franz, Frank Roscher, Frederic Gueth, Maik Wiemer, Harald Kuhn, and Yvonne Joseph. "A Parylene-Based Ultra-Thin Printed Circuit Board As a New Platform for Flexible Sensors and Wearables." ECS Meeting Abstracts MA2022-02, no. 63 (October 9, 2022): 2617. http://dx.doi.org/10.1149/ma2022-02632617mtgabs.
Повний текст джерелаMakkar, Sameer, Harpreet Kaur, Anurag Aggarwal, and Ruchi Vashisht. "A Confocal Laser Scanning Microscopic Study Evaluating the Sealing Ability of Mineral Trioxide Aggregate, Biodentine and Anew Pulp Capping Agent-Theracal." Dental Journal of Advance Studies 03, no. 01 (April 2015): 020–25. http://dx.doi.org/10.1055/s-0038-1672009.
Повний текст джерелаДисертації з теми "Capping-protection layer"
Jabeen, Fauzia. "III-V semiconducting nanowires by molecular beam epitaxy." Doctoral thesis, Università degli studi di Trieste, 2009. http://hdl.handle.net/10077/3097.
Повний текст джерелаThis thesis is devoted to the study of the growth of III-V nanowires (NWs) by catalyst assisted and catalyst free molecular beam epitaxy (MBE). The nanostructures have been routinely characterized by scanning electron microscopy (SEM) and, to a minor extent by transmission electron microscopy (TEM). X-ray photoemission spectroscopy (XPS), scanning photoemission microscopy (SPEM), extended X-ray absrorption fi ne structure analysis (EXAFS), photoluminescence (PL) and trans- port measurements have given an important contribution on specifi c topics. The first section of this thesis reports on GaAs, InAs, and InGaAs NWs growth by Au assisted MBE. A substrate treatment is proposed that improves uniformity in the NWS morphology. Thanks to a careful statistical analysis of the NWs shape and dimensions as a function of growth temperature and duration, evidence is found of radial growth of the NWs taking place together with the axial growth at the tip. This eff ect is interpreted in term of temperature dependent diff usion length of the cations on the NWs lateral surface. The control of the NWs radial growth allowed to grow core shell InGaAs/GaAs NWs, displaying superior optical quality. A new procedure is proposed to protect NWs surface from air exposure. This procedure allowed to perform ex-situ SPEM studies of electronic properties of the NWs. The second part of this thesis is devoted to Au-free NWs growth. GaAs and InAs NWs were successfully grown for the first time using Mn as catalyst. Incorporation of Mn in the NW is studied using EXAFS technique. It is shown that Mn atoms are incorporated in the body of GaAs NWs. Use of low growth temperature is suggested in order to improve the Mn incorporation inside GaAs NWs and obtain NWs with magnetic properties. Finally, growth of GaAs and InAs NWs on cleaved Si subtrate is demonstrated without the use of any outside metal catalyst. Two kinds of nanowires have been obtained. The experimental findings suggest that the two types of nanowires grow after di fferent growth processes.
Questa tesi e' dedicata allo studio della crescita di nanofili di semiconduttori III- V tramite epitassia da fasci molecolari (MBE) assistita da catalizzatore e senza l'uso di catalizzatori. Le nanostrutture sono state caratterizzate sistematicamente tramite microscopia elettronica a scansione (SEM), e in maniera minore microscopia elettronica in trasmissione (TEM). Altre tecniche come la spettroscopia di fotoemissione da raggi x (XPS), la microscopia da fotoemissione in scansione (SPEM), la spettroscopia di assorbimento x (in particolare la extended X-ray absorpition fine structure analysis (EXAFS)) la fotoluminescenza (PL), e il trasporto elettrico hanno dato importanti contributi su problematiche specifiche. La prima parte di questa tesi riguarda la crescita di nanofili di GaAs, InAs e InGaAs tramite MBE assistita da oro. Viene proposto un trattamento del substrato che migliora nettamente l'omogeneita' morfologica dei nanofili. Grazie ad un'attenta analisi statistica della forma e delle dimensioni dei nanofili in funzione della temperatura e del tempo di crescita e' stata dimostrata la crescita radiale dei nanofili, che avviene insieme alla crescita assiale che ha luogo alla punta del nanofilo. Le osservazioni sperimentali sono state interpretate in termini di dipendenza dalla temperatura della lunghezza di diffusione dei cationi sulle super ci laterali dei nanofili. Il controllo della crescita radiale ha permesso di crescere nanofili di InGaAs/GaAs core shell, costituiti cioe' da una anima centrale di InGaAs (core) e uno strato esterno di GaAs (shell) , che hanno dimostrato eccellente qualita' ottica. Viene quindi proposta una nuova procedura per proteggere la super ficie dei nanofili durante l'esposizione all'aria. Grazie a questa e' stato possibile realizzare ex-situ uno studio SPEM delle proprieta' elettroniche dei nanofili. La seconda parte della tesi riguarda la crescita di nanofili senza l'uso di oro. Viene per la prima volta dimostrata la possibilita' di crescere nanofili di GaAs e InAs usando il manganese come catalizzatore. L'incorporazione del Mn come impurezza nei nanofili e' stata studiata tramite EXAFS. Le misure hanno dimostrato che atomi di Mn sono effettivamente incorporate nel corpo dei nano fili. La crescita delle nanostrutture a temperatura piu' bassa potrebbe migliorare qualitativamente l'incorporazione del Mn e permettere la crescita di nanofili con proprieta' magnetiche. Viene in fine dimostrata la crescita di nanofili di GaAs e di InAs senza l'utilizzo di materiali diversi da quelli costituenti il semiconduttore. Tale risultato e' ottenuto su superfici sfaldate di silicio. Sono state osservate nanostrutture di due tipi, che sulla base dei dati sperimentali sembrano essere dovuti a due diversi meccanismi di crescita.
XXI Ciclo
1977
Частини книг з теми "Capping-protection layer"
Taber, Douglass F. "The Funk Synthesis of (-)-Nakadomarin A." In Organic Synthesis. Oxford University Press, 2013. http://dx.doi.org/10.1093/oso/9780199965724.003.0101.
Повний текст джерелаТези доповідей конференцій з теми "Capping-protection layer"
Saito, Hiroshi, and Tomihiro Taki. "Environmental Remediation Activities at the Ningyo-Toge Uranium Mine, Japan." In ASME 2010 13th International Conference on Environmental Remediation and Radioactive Waste Management. ASMEDC, 2010. http://dx.doi.org/10.1115/icem2010-40005.
Повний текст джерелаShehzad, Adil, Jaber Derakhshandeh, Bernhard Wunderle, Lin Hou, Samuel Suhard, Kenneth June Rebibis, Andy Miller, Gerald Beyer, and Eric Beyne. "New approach to apply 1,2,3-benzotriazole as a capping layer on UBMs for 3D TCB stacking and investigation of oxidation protection and solder wetting." In 2019 22nd European Microelectronics and Packaging Conference & Exhibition (EMPC). IEEE, 2019. http://dx.doi.org/10.23919/empc44848.2019.8951885.
Повний текст джерелаKoida, Keigo, Masahito Niibe, Yukinobu Kakutani, Shuichi Matsunari, Takashi Aoki, Shigeru Terashima, Takahiro Nakayama, Hiromitsu Takase, and Yasuaki Fukuda. "Protection from surface oxidation of Ru capping layers for EUVL projection optics mirrors by introducing hydrocarbon gas." In SPIE Advanced Lithography, edited by Frank M. Schellenberg. SPIE, 2008. http://dx.doi.org/10.1117/12.771814.
Повний текст джерела