Добірка наукової літератури з теми "BULK SEMICONDUCTING"
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Статті в журналах з теми "BULK SEMICONDUCTING"
Look, D. C., P. W. Yu, W. M. Theis, W. Ford, G. Mathur, J. R. Sizelove, D. H. Lee, and S. S. Li. "Semiconducting/semi‐insulating reversibility in bulk GaAs." Applied Physics Letters 49, no. 17 (October 27, 1986): 1083–85. http://dx.doi.org/10.1063/1.97429.
Повний текст джерелаSolozhenko, Vladimir L., Natalia A. Dubrovinskaia, and Leonid S. Dubrovinsky. "Synthesis of bulk superhard semiconducting B–C material." Applied Physics Letters 85, no. 9 (August 30, 2004): 1508–10. http://dx.doi.org/10.1063/1.1786363.
Повний текст джерелаYe, Yumin, Dominick J. Bindl, Robert M. Jacobberger, Meng-Yin Wu, Susmit Singha Roy, and Michael S. Arnold. "Semiconducting Carbon Nanotube Aerogel Bulk Heterojunction Solar Cells." Small 10, no. 16 (April 9, 2014): 3299–306. http://dx.doi.org/10.1002/smll.201400696.
Повний текст джерелаMahmood, A., and L. Enrique Sansores. "Band structure and bulk modulus calculations of germanium carbide." Journal of Materials Research 20, no. 5 (May 2005): 1101–6. http://dx.doi.org/10.1557/jmr.2005.0172.
Повний текст джерелаZuo, H., R. D. Griffin, G. M. Janowski, and R. N. Andrews. "Characterization of Bulk-Grown Hg1-xcdxTe." Proceedings, annual meeting, Electron Microscopy Society of America 49 (August 1991): 902–3. http://dx.doi.org/10.1017/s0424820100088828.
Повний текст джерелаCasellas, Nicolás M., Indre Urbanaviciute, Tim D. Cornelissen, José Augusto Berrocal, Tomás Torres, Martijn Kemerink, and Miguel García-Iglesias. "Resistive switching in an organic supramolecular semiconducting ferroelectric." Chemical Communications 55, no. 60 (2019): 8828–31. http://dx.doi.org/10.1039/c9cc02466b.
Повний текст джерелаHua, Chi-Chung, Chih-Yuan Kuo, and Show-An Chen. "Controlling bulk aggregation state in semiconducting conjugated polymer solution." Applied Physics Letters 93, no. 12 (September 22, 2008): 123303. http://dx.doi.org/10.1063/1.2988193.
Повний текст джерелаHe, Yuping, Ivana Savić, Davide Donadio, and Giulia Galli. "Lattice thermal conductivity of semiconducting bulk materials: atomistic simulations." Physical Chemistry Chemical Physics 14, no. 47 (2012): 16209. http://dx.doi.org/10.1039/c2cp42394d.
Повний текст джерелаHua, Chi Chung, Chih Jung Lin, Yu Ho Wen, and Show An Chen. "Stabilization of bulk aggregation state in semiconducting polymer solutions." Journal of Polymer Research 18, no. 4 (July 28, 2010): 793–800. http://dx.doi.org/10.1007/s10965-010-9476-3.
Повний текст джерелаJiang, Li-Feng, Lei Xu, and Jun Zhang. "Electronic properties of armchair graphene nanoribbons under uniaxial strain and electric field." International Journal of Modern Physics B 32, no. 24 (September 13, 2018): 1850263. http://dx.doi.org/10.1142/s0217979218502636.
Повний текст джерелаДисертації з теми "BULK SEMICONDUCTING"
Lafalce, Evan. "Photophysical and Electronic Properties of Low-Bandgap Semiconducting Polymers." Scholar Commons, 2014. https://scholarcommons.usf.edu/etd/5424.
Повний текст джерелаChan, Ka Hin. "Charge injection and transport characterization of semiconducting polymers and their bulk heterojunction blends." HKBU Institutional Repository, 2012. https://repository.hkbu.edu.hk/etd_ra/1405.
Повний текст джерелаPRAVEEN. "STUDY OF THIN FILM AND BULK SEMICONDUCTING MATERIALS FOR INTERFACE STRUCTURE AND OTHER PROPERTIES." Thesis, DELHI TECHNOLOGICAL UNIVERSITY, 2021. http://dspace.dtu.ac.in:8080/jspui/handle/repository/18645.
Повний текст джерелаBudde, Melanie. "Heteroepitaxy, surface- and bulk hole transport, and application of the p-type semiconducting oxides NiO and SnO." Doctoral thesis, Humboldt-Universität zu Berlin, 2020. http://dx.doi.org/10.18452/22240.
Повний текст джерелаThis thesis presents a comprehensive study on the growth by molecular beam epitaxy (MBE) and the measured Seebeck coefficients and hole transport properties of p‑type oxides, a material class which combines transparency and tunable conductivity. Specifically, Nickel oxide (NiO) and tin monoxide (SnO) were grown by plasma‑assisted MBE using a metal effusion cell and an oxygen plasma. For NiO growth, the focus lies on high temperature growth limits which were determined by the substrate stability of magnesium oxide and gallium nitride. Quality evaluation by Raman spectroscopy for rock‑salt crystal structures is demonstrated. Investigations of NiO doping by surface acceptors and the related surface hole accumulation layer reveal a new doping possibility for p‑type oxides in general. The meta‑stable SnO is stabilized by PAMBE utilizing known growth kinetics of tin dioxide and various in‑situ methods, its application-relevant thermal stability is investigated. Following ex‑situ characterizations by XRD and Raman spectroscopy identify secondary phases and a small growth window for the epitaxial growth of SnO. Electrical measurements confirm the p‑type carriers with promising hole mobilities accessible to Hall measurements. Temperature dependent Hall measurements show band‑like transport indicating a high quality of the grown layers. The functionality of the grown layers is proven by various applications. For example, pn‑heterojunctions were achieved by heteroepitaxial growth of the SnO layers on gallium oxide substrates. The first reported SnO based pn‑junction with an ideality factor below two is accomplished.
Budde, Melanie [Verfasser]. "Heteroepitaxy, surface- and bulk hole transport, and application of the p-type semiconducting oxides NiO and SnO / Melanie Budde." Berlin : Humboldt-Universität zu Berlin, 2020. http://d-nb.info/122392355X/34.
Повний текст джерелаSree, Rama Murthy A. "Physicochemical Characterization and Gas Sensing Studies of Cr1-xFexNbO4 and Application of Principal Component Analysis." Thesis, 2016. http://etd.iisc.ac.in/handle/2005/3215.
Повний текст джерелаSree, Rama Murthy A. "Physicochemical Characterization and Gas Sensing Studies of Cr1-xFexNbO4 and Application of Principal Component Analysis." Thesis, 2016. http://hdl.handle.net/2005/3215.
Повний текст джерелаКниги з теми "BULK SEMICONDUCTING"
GaAs and related materials: Bulk semiconducting and superlattice properties. Singapore: World Scientific, 1994.
Знайти повний текст джерелаTransparent Semiconducting Oxides: Bulk Crystal Growth and Fundamental Properties. Jenny Stanford Publishing, 2020.
Знайти повний текст джерелаGalazka, Zbigniew. Transparent Semiconducting Oxides: Bulk Crystal Growth and Fundamental Properties. Jenny Stanford Publishing, 2020.
Знайти повний текст джерелаGalazka, Zbigniew. Transparent Semiconducting Oxides: Bulk Crystal Growth and Fundamental Properties. Jenny Stanford Publishing, 2020.
Знайти повний текст джерелаGalazka, Zbigniew. Transparent Semiconducting Oxides: Bulk Crystal Growth and Fundamental Properties. Jenny Stanford Publishing, 2020.
Знайти повний текст джерелаЧастини книг з теми "BULK SEMICONDUCTING"
White, Matthew Schuette, and Niyazi Serdar Sariciftci. "Semiconducting Polymer-based Bulk Heterojunction Solar Cells." In Polymers for Energy Storage and Conversion, 199–214. Hoboken, NJ, USA: John Wiley & Sons, Inc., 2013. http://dx.doi.org/10.1002/9781118734162.ch7.
Повний текст джерелаBonner, W. A., and A. G. Ostrogorsky. "Bulk Ternary Semiconducting Compounds." In Encyclopedia of Materials: Science and Technology, 865–71. Elsevier, 2001. http://dx.doi.org/10.1016/b0-08-043152-6/00165-0.
Повний текст джерелаGalazka, Zbigniew. "Basics of Growth Techniques Used for Bulk Single Crystals of Transparent Semiconducting Oxides." In Transparent Semiconducting Oxides, 1–41. Jenny Stanford Publishing, 2020. http://dx.doi.org/10.1201/9781003045205-1.
Повний текст джерелаGalazka, Zbigniew. "Basics of Growth Techniques Used for Bulk Single Crystals of Transparent Semiconducting Oxides." In Transparent Semiconducting Oxides, 1–41. Jenny Stanford Publishing, 2020. http://dx.doi.org/10.4324/9781003045205-1.
Повний текст джерелаSchaeffer, H. A. "Silicon Dioxide: Bulk Properties." In Concise Encyclopedia of Semiconducting Materials & Related Technologies, 455–58. Elsevier, 1992. http://dx.doi.org/10.1016/b978-0-08-034724-0.50105-0.
Повний текст джерелаRiley, F. L. "Silicon Nitride: Bulk Properties." In Concise Encyclopedia of Semiconducting Materials & Related Technologies, 458–61. Elsevier, 1992. http://dx.doi.org/10.1016/b978-0-08-034724-0.50106-2.
Повний текст джерелаBellon, P., J. P. Chevalier, G. Martin, P. Deconinck, and J. Maluenda. "Bulk and surface defects in implanted and annealed GaAs." In Microscopy of Semiconducting Materials, 1987, 309–14. CRC Press, 2020. http://dx.doi.org/10.1201/9781003069621-50.
Повний текст джерелаElliot, A. G., and E. D. Bourret. "Growth of Semiconductor Bulk Single Crystals." In Concise Encyclopedia of Semiconducting Materials & Related Technologies, 217–30. Elsevier, 1992. http://dx.doi.org/10.1016/b978-0-08-034724-0.50055-x.
Повний текст джерелаVennéguès, P., M. Leroux, S. Dalmasso, M. Benaissa, P. De Mierry, and B. Beaumone. "Atomic structure of Mg-induced pyramidal inversion domains in bulk GaN." In Microscopy of Semiconducting Materials 2003, 273–76. CRC Press, 2018. http://dx.doi.org/10.1201/9781351074636-63.
Повний текст джерелаGalazka, Zbigniew. "Growth Measures to Achieve Bulk Single Crystals of Transparent Semiconducting and Conducting Oxides." In Handbook of Crystal Growth, 209–40. Elsevier, 2015. http://dx.doi.org/10.1016/b978-0-444-63303-3.00006-7.
Повний текст джерелаТези доповідей конференцій з теми "BULK SEMICONDUCTING"
Luhong Mao, Niefeng Sun, Xiaolong Zhou, Xiawan Wu, Weilian Guo, Ming Hu, Linxia Li, et al. "Character of non-stoichiometric InP bulk crystal." In 2004 13th International Conference on Semiconducting and Insulating Materials. IEEE, 2004. http://dx.doi.org/10.1109/sim.2005.1511376.
Повний текст джерелаKumari, Vinay, Vinod Kumar, B. P. Malik, Devendra Mohan, Arun Gaur, P. Predeep, Mrinal Thakur, and M. K. Ravi Varma. "Two Photon Absorption And Refraction in Bulk of the Semiconducting Materials." In OPTICS: PHENOMENA, MATERIALS, DEVICES, AND CHARACTERIZATION: OPTICS 2011: International Conference on Light. AIP, 2011. http://dx.doi.org/10.1063/1.3643652.
Повний текст джерелаSilvestri, Markus R., Peter D. Persans, and John Schroeder. "Pressure-tuned spectroscopy of II–VI semiconducting nanocrystals." In OSA Annual Meeting. Washington, D.C.: Optica Publishing Group, 1993. http://dx.doi.org/10.1364/oam.1993.thvv.1.
Повний текст джерелаAuret, F. D., M. Hayes, W. E. Meyer, J. M. Nel, L. Wu, and M. J. Legodi. "Electrical characterization of as-grown and particle irradiated n-type bulk ZnO." In 2004 13th International Conference on Semiconducting and Insulating Materials. IEEE, 2004. http://dx.doi.org/10.1109/sim.2005.1511422.
Повний текст джерелаYi-Hsing Peng, Weilou Cao, Min Du, Danilo Romero, Warren N. Herman, and Chi H. Lee. "Study of transient effects in photo-excited semiconducting polymer and bulk heterojunctions." In 2007 Quantum Electronics and Laser Science Conference. IEEE, 2007. http://dx.doi.org/10.1109/qels.2007.4431219.
Повний текст джерелаPeng, Yi-Hsing, Weilou Cao, Min Du, Danilo Romero, Warren N. Herman, and Chi H. Lee. "Study of transient effects in photo-excited semiconducting polymer and bulk heterojunctions." In CLEO 2007. IEEE, 2007. http://dx.doi.org/10.1109/cleo.2007.4453442.
Повний текст джерелаBeek, Waldo J. E., Martijn M. Wienk, and René A. J. Janssen. "Hybrid bulk heterojunction solar cells: blends of ZnO semiconducting nanoparticles and conjugated polymers." In Optics & Photonics 2005, edited by Zakya H. Kafafi and Paul A. Lane. SPIE, 2005. http://dx.doi.org/10.1117/12.614911.
Повний текст джерелаHu, Zhijing, Tao Shen, and Thomas Wong. "Evolution of plasmonic response of a semiconducting particle: Transition from surface to bulk phenomena." In 2017 Progress in Electromagnetics Research Symposium - Fall (PIERS - FALL). IEEE, 2017. http://dx.doi.org/10.1109/piers-fall.2017.8293481.
Повний текст джерелаHickey, Carolyn F., and Ursula J. Gibson. "Optical properties of SmS thin films." In OSA Annual Meeting. Washington, D.C.: Optica Publishing Group, 1985. http://dx.doi.org/10.1364/oam.1985.thn3.
Повний текст джерелаJenekhe, Samson A., and X. Linda Chen. "Self-Organized Organic Semiconductor Quantum Wires and Boxes." In Chemistry and Physics of Small-Scale Structures. Washington, D.C.: Optica Publishing Group, 1997. http://dx.doi.org/10.1364/cps.1997.csub.5.
Повний текст джерела