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Статті в журналах з теми "Buckled Thin Film Transistor"

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Автор: Grafiati

Опубліковано: 6 вересня 2023

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1

Cantarella, Giuseppe, Christian Vogt, Raoul Hopf, Niko Münzenrieder, Panagiotis Andrianakis, Luisa Petti, Alwin Daus, et al. "Buckled Thin-Film Transistors and Circuits on Soft Elastomers for Stretchable Electronics." ACS Applied Materials & Interfaces 9, no. 34 (August 21, 2017): 28750–57. http://dx.doi.org/10.1021/acsami.7b08153.

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2

Aoyama, Takashi, Genshiro Kawachi, Yasuhiro Mochizuki, and Takaya Suzuki. "Effect of Ion Doping Process on Thin-Film Transistor Characteristics Using a Bucket-Type Ion Source and XeCl Excimer Laser Annealing." Japanese Journal of Applied Physics 31, Part 1, No. 4 (April 15, 1992): 1012–15. http://dx.doi.org/10.1143/jjap.31.1012.

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3

Horng. "Thin Film Transistor." Crystals 9, no. 8 (August 9, 2019): 415. http://dx.doi.org/10.3390/cryst9080415.

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Анотація:

The special issue is "Thin Film Transistor". There are eight contributed papers. They focus on organic thin film transistors, fluorinated oligothiophenes transistors, surface treated or hydrogen effect on oxide-semiconductor-based thin film transistors, and their corresponding application in flat panel displays and optical detecting. The present special issue on “Thin Film Transistor” can be considered as a status report reviewing the progress that has been made recently on thin film transistor technology. These papers can provide the readers with more research information and corresponding application potential about Thin Film Transistors.

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4

Choi, Kwangsoo, and Masakiyo Matsumura. "Semi-Insulating Polysilicon Thin-Film Transistor: A Proposed Thin-Film Transistor." Japanese Journal of Applied Physics 34, Part 1, No. 7A (July 15, 1995): 3497–99. http://dx.doi.org/10.1143/jjap.34.3497.

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5

YASE, Kiyoshi. "Organic Thin Film Transistor." Kobunshi 53, no. 2 (2004): 85–88. http://dx.doi.org/10.1295/kobunshi.53.85.

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6

IÑIGUEZ, BENJAMIN, TOR A. FJELDLY, and MICHAEL S. SHUR. "THIN-FILM TRANSISTOR MODELING." International Journal of High Speed Electronics and Systems 09, no. 03 (September 1998): 703–23. http://dx.doi.org/10.1142/s0129156498000300.

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Анотація:

We review recent physics-based, analytical DC models for amorphous silicon (a-Si), polysilicon (poly-Si), and organic thin film transistors (TFTs), developed for the design of novel ultra high-resolution, large area displays using advanced short-channel TFTs. In particular, we emphasize the modeling issues related to the main short-channel effects, such as self-heating (a-Si TFTs) and kink effect (a-Si and poly-Si TFTs), which are present in modern TFTs. The models have been proved to accurately reproduce the DC characteristics of a-Si:H with gate lengths down to 4 μm and poly-Si TFTs with gate lengths down to 2 μm. Because the scalability of the models and the use of continuous expressions for describing the characteristics in all operating regimes, the models are suitable for implementation in circuit simulators such as SPICE.

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7

Pavelko, Vitalijs. "Behavior of Thin-Film-Type Delamination of Layered Composite in Post-Buckling." Advanced Materials Research 774-776 (September 2013): 1312–21. http://dx.doi.org/10.4028/www.scientific.net/amr.774-776.1312.

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A revision of the basic assumptions those are usually used in the analysis of stability of thin delaminated layer and delamination propagation in a compressed composite is presented in this paper. For this purpose, the theory of flexible elastic plates with large displacements was used. As a result the compressive force and the total longitudinal strain of sub-laminate are expressed in terms of complete elliptic integrals, which uniquely identify the buckled shape of sub-laminate, the effect of buckling on the compression strain and increment of the compressive force in the buckled state. Stress and strain, as well as the strength of the buckled sub-laminate in the dangerous cross-section were also analyzed. The results of the general analysis of delamination propagation and its compression-bending destruction in the buckled state allow to define the basic regularities of the damage behavior of compressed layered composite.

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8

Oh, Teresa. "Low Power Thin Film Transistor." Science of Advanced Materials 9, no. 11 (November 1, 2017): 2013–18. http://dx.doi.org/10.1166/sam.2017.3204.

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9

Lifshitz, N., S. Luryi, M. R. Pinto, and C. S. Rafferty. "Active-gate thin-film transistor." IEEE Electron Device Letters 14, no. 8 (August 1993): 394–95. http://dx.doi.org/10.1109/55.225590.

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10

Nomura, Kenji, Toshio Kamiya, and Hideo Hosono. "Ambipolar Oxide Thin-Film Transistor." Advanced Materials 23, no. 30 (July 1, 2011): 3431–34. http://dx.doi.org/10.1002/adma.201101410.

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11

Kimura, Mutsumi, Takehiro Shima, and Takehiko Yamashita. "Artificial Retina using Thin-Film Photodiode and Thin-Film Transistor." ECS Transactions 3, no. 8 (December 21, 2019): 325–31. http://dx.doi.org/10.1149/1.2356370.

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12

Hamilton, M. C., and J. Kanicki. "Organic Polymer Thin-Film Transistor Photosensors." IEEE Journal of Selected Topics in Quantum Electronics 10, no. 4 (July 2004): 840–48. http://dx.doi.org/10.1109/jstqe.2004.833972.

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13

Bof Bufon, C. C., and T. Heinzel. "Polypyrrole thin-film field-effect transistor." Applied Physics Letters 89, no. 1 (July 3, 2006): 012104. http://dx.doi.org/10.1063/1.2219375.

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14

Prins, M. W. J., K. ‐O Grosse‐Holz, G. Müller, J. F. M. Cillessen, J. B. Giesbers, R. P. Weening, and R. M. Wolf. "A ferroelectric transparent thin‐film transistor." Applied Physics Letters 68, no. 25 (June 17, 1996): 3650–52. http://dx.doi.org/10.1063/1.115759.

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15

Klauk, H., D. J. Gundlach, and T. N. Jackson. "Fast organic thin-film transistor circuits." IEEE Electron Device Letters 20, no. 6 (June 1999): 289–91. http://dx.doi.org/10.1109/55.767101.

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16

Kim, Gun Hee, Hyun Soo Kim, Hyun Soo Shin, Byun Du Ahn, Kyung Ho Kim, and Hyun Jae Kim. "Inkjet-printed InGaZnO thin film transistor." Thin Solid Films 517, no. 14 (May 2009): 4007–10. http://dx.doi.org/10.1016/j.tsf.2009.01.151.

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17

Nakashima, Akihiro, Yuki Sagawa, and Mutsumi Kimura. "Temperature Sensor Using Thin-Film Transistor." IEEE Sensors Journal 11, no. 4 (April 2011): 995–98. http://dx.doi.org/10.1109/jsen.2010.2060720.

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18

Liu, Po-Tsun, Yi-Teh Chou, Li-Feng Teng, Fu-Hai Li, and Han-Ping Shieh. "Nitrogenated amorphous InGaZnO thin film transistor." Applied Physics Letters 98, no. 5 (January 31, 2011): 052102. http://dx.doi.org/10.1063/1.3551537.

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19

Stewart, Kevin A., and John F. Wager. "Thin-film transistor mobility limits considerations." Journal of the Society for Information Display 24, no. 6 (June 2016): 386–93. http://dx.doi.org/10.1002/jsid.452.

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20

Kim, Ji-Won, Jong-Keun Lee, Young Woong Kim, Sung-Kyu Hong, Yong-Young Noh, and Young Soon Kim. "Printable Indium Oxide Thin-Film Transistor." NIP & Digital Fabrication Conference 26, no. 1 (January 1, 2010): 737–39. http://dx.doi.org/10.2352/issn.2169-4451.2010.26.1.art00094_2.

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21

Winton, Brad, Mihail Ionescu, and Shi Xue Dou. "The control of time-dependent buckling patterns in thin confined elastomer film." Journal of Materials Research 25, no. 10 (October 2010): 1929–35. http://dx.doi.org/10.1557/jmr.2010.0263.

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Анотація:

Low energy metal ion implantation has been used to combine an easy “bottom-up” way of creating and tuning different topographic structures on submicron to micrometer scales with the embedding of a metallic element-rich functionalized layer at the surface for a variety of scientific and technological applications. The self-organizing and complex patterns of functionalized topographic structures are highly dependent on the implanted metal ion species, variations in the geometric confinement of the buckled areas on the larger unmodified elastomer film, and the boundary conditions of the buckled regions. Systematic investigations of these dependencies have been carried out via optical and atomic force microscopy, and confirmed with cross-sectional transmission electron microscopy.

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22

Fan, Xuanqing, Yi Wang, Yuhang Li, and Haoran Fu. "Vibration Analysis of Post-Buckled Thin Film on Compliant Substrates." Sensors 20, no. 18 (September 22, 2020): 5425. http://dx.doi.org/10.3390/s20185425.

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Анотація:

Buckling stability of thin films on compliant substrates is universal and essential in stretchable electronics. The dynamic behaviors of this special system are unavoidable when the stretchable electronics are in real applications. In this paper, an analytical model is established to investigate the vibration of post-buckled thin films on a compliant substrate by accounting for the substrate as an elastic foundation. The analytical predictions of natural frequencies and vibration modes of the system are systematically investigated. The results may serve as guidance for the dynamic design of the thin film on compliant substrates to avoid resonance in the noise environment.

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23

Krammer, Markus, James Borchert, Andreas Petritz, Esther Karner-Petritz, Gerburg Schider, Barbara Stadlober, Hagen Klauk, and Karin Zojer. "Critical Evaluation of Organic Thin-Film Transistor Models." Crystals 9, no. 2 (February 6, 2019): 85. http://dx.doi.org/10.3390/cryst9020085.

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Анотація:

The thin-film transistor (TFT) is a popular tool for determining the charge-carrier mobility in semiconductors, as the mobility (and other transistor parameters, such as the contact resistances) can be conveniently extracted from its measured current-voltage characteristics. However, the accuracy of the extracted parameters is quite limited, because their values depend on the extraction technique and on the validity of the underlying transistor model. We propose here a new approach for validating to what extent a chosen transistor model is able to predict correctly the transistor operation. In the two-step fitting approach we have developed, we analyze the measured current-voltage characteristics of a series of TFTs with different channel lengths. In the first step, the transistor parameters are extracted from each individual transistor by fitting the output and transfer characteristics to the transistor model. In the second step, we check whether the channel-length dependence of the extracted parameters is consistent with the underlying model. We present results obtained from organic TFTs fabricated in two different laboratories using two different device architectures, three different organic semiconductors and five different materials combinations for the source and drain contacts. For each set of TFTs, our approach reveals that the state-of-the-art transistor models fail to reproduce correctly the channel-length-dependence of the transistor parameters. Our approach suggests that conventional transistor models require improvements in terms of the charge-carrier-density dependence of the mobility and/or in terms of the consideration of uncompensated charges in the carrier-accumulation channel.

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24

Won, Do Young, Manh-Cuong Nguyen, Hyun Min Kim, Nam Kyun Tak, Jin Hyung Choi, Rino Choi, Jae-Min Myoung, and Ho Gyu Yoon. "Residual Image Reduction Using Electric Field Shield Metal in Plastic Organic Light-Emitting Diode Display." Journal of Nanoscience and Nanotechnology 20, no. 11 (November 1, 2020): 6884–89. http://dx.doi.org/10.1166/jnn.2020.18806.

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A plastic organic light-emitting diode display is a device that emits light in an organic layer in proportion to the amount of current applied from a thin film transistor, which constitutes a pixel. However, it was confirmed that the residual image was shown by the operation of the thin film transistor. To suppress residual image, the effect of electric field was studied in operation of a-IGZO thin film transistor. The a-IGZO thin film transistor, in which a polyimide film was used as a substrate, was applied as a driving thin film transistor for pixel circuits in a plastic organic light-emitting diode display, and the effect of the electric field behavior inside the film on residual images was studied. Residual images were strongly connection with the electric field distribution characteristics inside the polyimide substrate, and they were reduced by introducing an electric field shield metal layer in the a-IGZO thin film transistor. The correlation between residual image generation and the operation of the a-IGZO thin film transistor was further explained through technology computer-aided design simulation (Silvaco Group Inc.).

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25

Seok, Seonho. "FEM Analysis of Buckled Dielectric Thin-Film Packaging Based on 3D Direct Numerical Simulation." Micromachines 14, no. 7 (June 26, 2023): 1312. http://dx.doi.org/10.3390/mi14071312.

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This paper presents a 3D direct numerical simulation of buckled thin-film packaging based on transferred elastic thin-film wrinkling bonded on a compliant polymer ring. The mode change of the fabricated thin-film cap is found by measuring the thin-film cap shape at different times after Si substrate debonding. The conventional linear and nonlinear buckling simulations are not adequate to understand the behavior of the thin-film buckling mechanism creating such packaging cap mode change. Direct buckling simulation is recently reported as an easy and useful numerical wrinkling simulation method. A novel 3D FEM model of a thin-film package suitable for direct 3D buckling simulation is built to reduce the mode mixture between different buckling modes. Buckling modes of the packaging cap are investigated in terms of elastic moduli of package materials and applied strain due to thermal expansion coefficient difference. Based on the simulation results, it is found that there are two main modes in the fabricated thin-film buckling package determining the shape of the transferred thin-film packaging cover depending on the elasticity ratio between the cap and sealing ring materials. The mode shift from wrinkling cap mode to out-of-plane cap mode due to applied strain along a polymeric sealing ring is found.

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26

Kanoh, Hiroshi, and Masakiyo Matsumura. "Thermal-CVD Amorphous-Silicon Thin-Film Transistor." IEEJ Transactions on Fundamentals and Materials 110, no. 10 (1990): 667–69. http://dx.doi.org/10.1541/ieejfms1990.110.10_667.

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27

Elkington, Daniel, Nathan Cooling, Warwick Belcher, Paul Dastoor, and Xiaojing Zhou. "Organic Thin-Film Transistor (OTFT)-Based Sensors." Electronics 3, no. 2 (April 8, 2014): 234–54. http://dx.doi.org/10.3390/electronics3020234.

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28

Ichikawa, Kazunori, Mami Fujii, Yukiharu Uraoka, Prakaipetch Punchaipetch, Hiroshi Yano, Tomoaki Hatayama, Takashi Fuyuki, and Ichiro Yamashita. "Nonvolatile Thin Film Transistor Memory with Ferritin." Journal of the Korean Physical Society 54, no. 9(5) (January 15, 2009): 554–57. http://dx.doi.org/10.3938/jkps.54.554.

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29

Higashi, H., M. Nakano, K. Kudo, Y. Fujita, S. Yamada, T. Kanashima, I. Tsunoda, H. Nakashima, and K. Hamaya. "A crystalline germanium flexible thin-film transistor." Applied Physics Letters 111, no. 22 (November 27, 2017): 222105. http://dx.doi.org/10.1063/1.5007828.

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30

Clarisse, C., M. T. Riou, M. Gauneau, and M. le Contellec. "Field-effect transistor with diphthalocyanine thin film." Electronics Letters 24, no. 11 (May 26, 1988): 674–75. http://dx.doi.org/10.1049/el:19880456.

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31

Kumar, K. P. A., J. K. O. Sin, Man Wong, and V. M. C. Poon. "A Conductivity Modulated Polysilicon Thin-Film Transistor." IEEE Electron Device Letters 16, no. 11 (November 1995): 521–23. http://dx.doi.org/10.1109/55.468287.

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32

Maeda, Hiroki. "6.Thin Film Transistor Using Organic Semiconductor." Journal of The Institute of Image Information and Television Engineers 64, no. 9 (2010): 1320–22. http://dx.doi.org/10.3169/itej.64.1320.

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33

Afentakis, T., R. S. Sposili, and A. Voutsas. "A Novel Agglomerated-Silicon Thin-Film Transistor." IEEE Electron Device Letters 31, no. 1 (January 2010): 50–52. http://dx.doi.org/10.1109/led.2009.2035137.

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34

Ling Li, H. Marien, J. Genoe, M. Steyaert, and P. Heremans. "Compact Model for Organic Thin-Film Transistor." IEEE Electron Device Letters 31, no. 3 (March 2010): 210–12. http://dx.doi.org/10.1109/led.2009.2039744.

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35

Street, R. A., W. S. Wong, T. Ng, and R. Lujan. "Amorphous silicon thin film transistor image sensors." Philosophical Magazine 89, no. 28-30 (October 2009): 2687–97. http://dx.doi.org/10.1080/14786430802709113.

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36

Cheon, Jun Hyuk, Seung Hyun Park, Moon Hyo Kang, Jin Jang, Sung Eun Ahn, Jeffrey Cites, Carlo Kosik Williams, and Chuan Che Wang. "Ultrathin Si Thin-Film Transistor on Glass." IEEE Electron Device Letters 30, no. 2 (February 2009): 145–47. http://dx.doi.org/10.1109/led.2008.2010065.

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37

Colgan, E. G., R. J. Polastre, M. Takeichi, and R. L. Wisnieff. "Thin-film-transistor process-characterization test structures." IBM Journal of Research and Development 42, no. 3.4 (May 1998): 481–90. http://dx.doi.org/10.1147/rd.423.0481.

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38

Mourey, Devin A., Dalong A. Zhao, Jie Sun, and Thomas N. Jackson. "Fast PEALD ZnO Thin-Film Transistor Circuits." IEEE Transactions on Electron Devices 57, no. 2 (February 2010): 530–34. http://dx.doi.org/10.1109/ted.2009.2037178.

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39

Yoo, Geonwook, Tze-ching Fung, Daniela Radtke, Marko Stumpf, Uwe Zeitner, and Jerzy Kanicki. "Hemispherical thin-film transistor passive pixel sensors." Sensors and Actuators A: Physical 158, no. 2 (March 2010): 280–83. http://dx.doi.org/10.1016/j.sna.2009.11.019.

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40

Sameshima, T. "Laser processing for thin film transistor applications." Materials Science and Engineering: B 45, no. 1-3 (March 1997): 186–93. http://dx.doi.org/10.1016/s0921-5107(96)01886-7.

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41

Sun, Kai, Ioannis Zeimpekis, Marta Lombardini, Nonofo M. Jack Ditshego, Stuart J. Pearce, Kian S. Kiang, Owain Thomas, et al. "Three-Mask Polysilicon Thin-Film Transistor Biosensor." IEEE Transactions on Electron Devices 61, no. 6 (June 2014): 2170–76. http://dx.doi.org/10.1109/ted.2014.2315669.

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42

Dutta, Soumya, and Ananth Dodabalapur. "Zinc tin oxide thin film transistor sensor." Sensors and Actuators B: Chemical 143, no. 1 (December 4, 2009): 50–55. http://dx.doi.org/10.1016/j.snb.2009.07.056.

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43

Koezuka, H., A. Tsumura, and T. Ando. "Field-effect transistor with polythiophene thin film." Synthetic Metals 18, no. 1-3 (February 1987): 699–704. http://dx.doi.org/10.1016/0379-6779(87)90964-7.

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44

Van Calster, A. "Fabrication processes for the thin film transistor." Thin Solid Films 126, no. 3-4 (April 1985): 219–25. http://dx.doi.org/10.1016/0040-6090(85)90314-1.

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45

Hwang, J. D., Y. K. Fang, and T. Y. Tsai. "A vertical submicron SiC thin film transistor." Solid-State Electronics 38, no. 2 (February 1995): 275–78. http://dx.doi.org/10.1016/0038-1101(94)00120-5.

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46

Park, Jong-Won, Dong Hee Lee, June Chen, Man-Hun Bae, Moon-Sung Kang, Yun-Hi Kim, Seungmoon Pyo, Mi Hye Yi, and Soon-Ki Kwon. "Organic thin-film transistor based on dibenzothiophene." Current Applied Physics 10, no. 4 (November 2010): e152-e156. http://dx.doi.org/10.1016/j.cap.2010.03.011.

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47

Hunter, Joe S. "Multifunction sensor using thin film transistor transducers." Journal of the Acoustical Society of America 77, no. 5 (May 1985): 1978. http://dx.doi.org/10.1121/1.391784.

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48

Wager, John F. "(Invited) Thin-Film Transistor Accumulation-Mode Modeling." ECS Meeting Abstracts MA2022-02, no. 35 (October 9, 2022): 1257. http://dx.doi.org/10.1149/ma2022-02351257mtgabs.

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Анотація:

Analytical equations are developed for electrostatic assessment of accumulation-mode thin-film transistors (TFTs) so that potential, electric field, and accumulation layer free electron concentration profiles may be generated. Additionally, equations are derived for plotting TFT trap density versus surface potential, based on accurate extraction of the channel mobility as a function of gate voltage. A key factor in formulating these device physics equations is distinguishing between a ‘long-base’ or ‘short-base’ channel thickness. A ‘long-base’ (‘short-base’) channel thickness is defined to occur when the accumulation layer thickness (as calculated in the normal manner) is less than (greater than) the physical thickness of the channel layer. The electrostatic equations derived herein are applied to the analysis of two amorphous oxide semiconductor (AOS) TFTs with differing channel layers, i.e., a 40 nm amorphous indium gallium zinc oxide (a-IGZO) or a 7 nm amorphous indium zinc oxide (a-IZO). Application of these equations suggests that optimal TFT performance is obtained when the channel layer thickness is chosen to be similar to its Debye length. Estimated trap densities of these two AOS TFTs are found to be quite similar. Therefore, the superior mobility performance of the a-IZO TFT compared to the a-IGZO TFT is ascribed to the smaller effective mass of a-IZO, assuming that the maximum (no trapping) drift mobility in the channel is established by the thermally-limited diffusive mobility.

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49

Aguilhon, L., J.-P. Bourgoin, A. Barraud, and P. Hesto. "Thin film organic channel field effect transistor." Synthetic Metals 71, no. 1-3 (April 1995): 1971–74. http://dx.doi.org/10.1016/0379-6779(94)03130-x.

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Anthopoulos, Thomas D., Yong‐Young Noh, and Oana D. Jurchescu. "Emerging Thin‐Film Transistor Technologies and Applications." Advanced Functional Materials 30, no. 20 (May 2020): 2001678. http://dx.doi.org/10.1002/adfm.202001678.

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