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Статті в журналах з теми "Broadband Photodetector"
Zhou, Guigang, Huancheng Zhao, Xiangyang Li, Zhenhua Sun, Honglei Wu, Ling Li, Hua An, Shuangchen Ruan, and Zhengchun Peng. "Highly-Responsive Broadband Photodetector Based on Graphene-PTAA-SnS2 Hybrid." Nanomaterials 12, no. 3 (January 29, 2022): 475. http://dx.doi.org/10.3390/nano12030475.
Повний текст джерелаYou, Jie, Yichi Zhang, Maolong Yang, Bo Wang, Huiyong Hu, Zimu Wang, Jinze Li, Hao Sun, and Liming Wang. "Ultraviolet-Visible-Near Infrared Broadband Photodetector Based on Electronspun Disorder ZnO Nanowires/Ge Quantum Dots Hybrid Structure." Crystals 12, no. 2 (January 25, 2022): 172. http://dx.doi.org/10.3390/cryst12020172.
Повний текст джерелаLi, Xiangyang, Shuangchen Ruan, and Haiou Zhu. "SnS Nanoflakes/Graphene Hybrid: Towards Broadband Spectral Response and Fast Photoresponse." Nanomaterials 12, no. 16 (August 13, 2022): 2777. http://dx.doi.org/10.3390/nano12162777.
Повний текст джерелаWang, Jiaying, Yisong Zhu, Wenhao Wang, Yunze Li, Rui Gao, Peng Yu, Hongxing Xu, and Zhiming Wang. "Broadband Tamm plasmon-enhanced planar hot-electron photodetector." Nanoscale 12, no. 47 (2020): 23945–52. http://dx.doi.org/10.1039/d0nr06294d.
Повний текст джерелаLu, Yueheng, Xiao Sun, Huabin Zhou, Haojie Lai, Ran Liu, Pengyi Liu, Yang Zhou, and Weiguang Xie. "A high-performance and broadband two-dimensional perovskite-based photodetector via van der Waals integration." Applied Physics Letters 121, no. 16 (October 17, 2022): 161104. http://dx.doi.org/10.1063/5.0116505.
Повний текст джерелаZhang, Xinlei, Yuanfang Yu, Yueying Cui, Fang Yang, Wenhui Wang, Lin Liu, Junpeng Lu, and Zhenhua Ni. "High-performance broadband WO3−x/Bi2O2Se photodetectors based on plasmon-induced hot-electron injection." Applied Physics Letters 121, no. 6 (August 8, 2022): 061103. http://dx.doi.org/10.1063/5.0106392.
Повний текст джерелаYang, Jiawei, Yudong Liu, Haina Ci, Feng Zhang, Jianbo Yin, Baolu Guan, Hailin Peng, and Zhongfan Liu. "High-Performance 3D Vertically Oriented Graphene Photodetector Using a Floating Indium Tin Oxide Channel." Sensors 22, no. 3 (January 26, 2022): 959. http://dx.doi.org/10.3390/s22030959.
Повний текст джерелаLin, Zhitao, Wenbiao Zhu, Yonghong Zeng, Yiqing Shu, Haiguo Hu, Weicheng Chen, and Jianqing Li. "Enhanced Photodetection Range from Visible to Shortwave Infrared Light by ReSe2/MoTe2 van der Waals Heterostructure." Nanomaterials 12, no. 15 (August 3, 2022): 2664. http://dx.doi.org/10.3390/nano12152664.
Повний текст джерелаLi, Haixia, Bingyi Liu, Weiwei Lin, Yang Liu, Yu Wang, Zhongyuan Zhang, Lun Xiong, and Jiayou Tao. "Enhancing Performance of Broadband Photodetectors Based on Perovskite CsPbBr3 Nanocrystals/ZnO-Microwires Heterostructures." Science of Advanced Materials 13, no. 9 (September 1, 2021): 1748–55. http://dx.doi.org/10.1166/sam.2021.4072.
Повний текст джерелаTsai, Shang Yu, Ching-Chang Lin, Cheng-Tang Yu, Yen-Shuo Chen, Wei-Lin Wu, Yu-Cheng Chang, Chun Chi Chen, and Fu-Hsiang Ko. "Screen-Printable Silver Paste Material for Semitransparent and Flexible Metal–Semiconductor–Metal Photodetectors with Liquid-Phase Procedure." Nanomaterials 12, no. 14 (July 15, 2022): 2428. http://dx.doi.org/10.3390/nano12142428.
Повний текст джерелаДисертації з теми "Broadband Photodetector"
Konukbay, Atakan. "Design of a voltage tunable broadband quantum well infrared photodetector." Thesis, Monterey, Calif. : Springfield, Va. : Naval Postgraduate School ; Available from National Technical Information Service, 2002. http://library.nps.navy.mil/uhtbin/hyperion-image/02Jun%5FKonukbay.pdf.
Повний текст джерелаArora, Himani, Renhao Dong, Tommaso Venanzi, Jens Zscharschuch, Harald Schneider, Manfred Helm, Xinliang Feng, Enrique Cánovas, and Artur Erbe. "Demonstration of a Broadband Photodetector Based on a 2D Metal–Organic Framework." Wiley-VCH, 2020. https://tud.qucosa.de/id/qucosa%3A72555.
Повний текст джерелаZhang, Baosen. "SOLUTION-PROCESSED BROADBAND BULK HETEROJUNCTION PEROVSKITE PHOTODETECTORS." University of Akron / OhioLINK, 2019. http://rave.ohiolink.edu/etdc/view?acc_num=akron1556551220940959.
Повний текст джерелаZhan, Jun-Yu, and 詹竣宇. "Nanostructure-enhanced Broadband Photodetector Based on Graphene/CdSe Quantum Dot/Silicon Multiple Junctions." Thesis, 2014. http://ndltd.ncl.edu.tw/handle/83937728306479422712.
Повний текст джерела國立臺灣海洋大學
光電科學研究所
102
The thesis studies the fabrication of efficient broadband(380 nm ~ 940 nm) photodetector(PD) base on graphene/CdSe QDs/Si multiple junctions. At 2 V bias for the graphene side, the external quantum efficiency(EQE) up to 218 % at 510 nm and the responsivity as high as 0.9 A/W for the range from 520 nm to 660 nm were achieved. The response time and recovery time are 0.24 ms and 0.28 ms, respectively. Under bias of -2 V for the graphene side, the dark current, photocurrent and on/off ratio was fou- nd to be 1.77#westeur024#10-6 A, 2.06#westeur024#10-4 A and ~10+2, respectively. It was found that when CdSe QDs were added, the EQE and responsivity of graphene/CdSe QDs/Si PD with respect to that of graphene/Si PD were enhanced together with the increase in the absorption band of the detector ranging from ultraviolet to near-infrared. Thus the graphene/CdSe QDs/Si multiple junctions can form the efficient broadband phtodetector.
Kung, Shu-Yen, and 孔書硯. "The Applications of InGaAs–Capped Quantum–Dot Infrared Photodetectors in Broadband Detection and Thermal Imaging." Thesis, 2011. http://ndltd.ncl.edu.tw/handle/21463076926313106856.
Повний текст джерела國立清華大學
電子工程研究所
99
In this thesis, we have investigated the fundamental property of the InGaAs–capped quantum dot infrared photodetectors (QDIPs) and their applications in broadband detection and thermal imaging. Compared with standard InAs/GaAs QDIPs, InGaAs–capped QDIPs have the detection wavelength which is shifted from 6 to 7.9 μm. The results suggest that the dominant transition mechanism in the InGaAs–capped QDIPs is from the QD excited state to the InGaAs QW ground state, which reduced energy difference between the two states. By decreasing the InAs QD coverage from 2.5 to 2.0 ML, an even longer detection wavelength 10.4 μm is observed. Due to the QD excited state is pushed closer to the QW ground state in the InGaAs capping layer. With the device performance of standard and InGaAs–capped QDIPs, a straightforward approach to achieve broadband QDIPs is to stack the two structures into one device. The device would exhibit a wide detection window ranging from 4 to 11 μm with high responsivities. The phenomenon is attributed to the high responsivities of the standard QD and the InGaAs–capped QD structures in the MWIR and LWIR ranges, respectively. We bring up a simple ideal that without the complicated fabrication process, precise focusing mirror lens and readout integrated circuit (ROIC) prepare for focal plane array to extract the large–format, the thermal imaging formation can be obtained easily by a single–device scanning. It is a promising step for diagnosing diseases from a tiny cell.
You, Yan-Ting, and 游晏婷. "Low Temperature Growth of Se microstructures by A Plasma-Assisted Selenization Process Toward Broadband Photodetectors." Thesis, 2017. http://ndltd.ncl.edu.tw/handle/6tccd6.
Повний текст джерелаYu, Chung-Hua, and 喻忠華. "Study of broadband infrared photodetection and thermal radiation control on silicon based micro-nano hybrid structures." Thesis, 2017. http://ndltd.ncl.edu.tw/handle/82608954397987963817.
Повний текст джерела國立臺灣大學
材料科學與工程學研究所
105
The infrared absorption spectrum in midinfrared (mid IR, MIR) spectral range contains “fingerprints” of the most common molecular bonds, key to sample composition analysis and is useful for nondestructive and rapid analysis for material characterization and environment monitoring. Furthermore, the MIR light can be applied to thermal image that is corresponding spectral regime for the thermal radiation from room temperature to several hundred degrees Celcius. On the other hand, near infrared (NIR) spectral range is the regime for optical telecommunication. To sum the above, photodetectors, light sources, and thermal dissipation routes in infrared spectral range all perform the importance in various applications. However, the study in this field so far faces several problems, including processes being complicated, slow, expensive, and not compatible with silicon semiconductor process technology (Si-CMOS, Silicon-Complementary Metal-Oxide-Semiconductor). This thesis would like to develop silicon-based photodetectors working from NIR to MIR regimes, Moreover, using the broadband, high absorption of silicon-based structures to develop thermal radiation based heat dissipation structures. In the first part of this thesis, the titanium nitride (TiN) thin film coated on a deep trench silicon structure to generate low reflection and high absorption properties at resonace wavelengths. Also, TiN thin film can form a good Schottky contact with a p-Si substrate. When the resonanct wavelength at 10.6 μm, the optical absorption could be as high as 60.7%. The responsivity could be up to 0.632mV W-1 under CO2 laser (light intensity=4.26W/cm2) illumination and up to 246mV W-1 under low light intensity light source (light intensity=2.64mW/cm2). The excess voltage has great linear relationship with light intensity, and the measurement was highly repeatable. Also, the measurements were all conducted at room temperature which could satisfy the low energy comsumption demand. In the second part of this thesis, we would like to develop photodetectors working in optical telecommunication spectral range. We used back illuminated schemes of TiN thin film along with deep trench silicon structure that can perform broadband, wide angle of low reflection, and high absorption properties. The optical absorption was up to 85.7% at 1550nm wavelength. TiN thin film formed a Schottky contact with p-Si substrates and the locations which carriers generated were close to the contact surfaces. When devices conducted at zero bias, the responsivity was up to 0.412 mA W-1, and detectivity was 5.02 x109 Jones. The responsivity of the devices differed very little when the angle of incident light below 60o. In addition, we also demonstrated the photovoltage detection ability of the devices and its responsivity was 15.4mV W-1. In the the third part of this thesis, the TiN thin film and deep trench silicon structure performed broadband high absorption properties in MIR. The high absorption also represented the high emission property. By the optical measurement of practical devices, the average absorption was up to 61%. Use white light of Xe lamp along with AM1.5 filter in order to simulate solar light heating the devices. Its equilibrium temperature was lower 8.5oC than the flat film sample and the decay time constant of cooling was also 3 seconds shorter. The deeper trench, the closer the hole to period ratio (H/P) to 1/3, the lower the equilibrium temperature of the device, certificating that the high absorption conditions in simulations with lower equilibrium temperature. In the the fourth part of this thesis, we used gold (Au) thin film combined with shallow trench silicon oxide (SiO2) and successfully designed a narrow band and high emission device at specific wavelength (4.3μm), making it a high quality factor (Peak wavelength/ Full width at half maximum, Q= λ/Δλ), low energy comsumption thermal emission light source in MIR. In addition, this structure could also apply to enhance the surface enhanced infrared absorption because of its high electric field on its surface. The structure made CO2 absorption signal enhanced 5.3 times without changing the absorption peak ratio of the two peaks of CO2.
Chen, Shih-Sheng, and 陳仕昇. "Efficient Broadband a-IGZO/SiO2/Si Heterojunction Photodetectors Based on a-IGZO/Graphene Nano-flakes Composites Prepared by Solution Process." Thesis, 2014. http://ndltd.ncl.edu.tw/handle/52506121259820701608.
Повний текст джерела國立臺灣海洋大學
光電科學研究所
102
This thesis studies the fabrication of hetero-structured broadband photodetectors fabricated by the composite consisted of indium gallium zinc oxide (IGZO) incorporated with the graphene nanoflakes (GNFs) and silicon oxide (SiO2)/silicon substrate. It was found that IGZO:GNFs film along with the increase in volume concentration (0.1 ~ 0.9 vol%), the conductivity of film increases from 0.027 S / m to 0.749 S / m, which is an increase of 27.7 times. The current-voltage relation of the IGZO:GNFs/SiO2/Si devices exhibited the p-n junction characteristics. The photoresponse range comprises the UV absorption of IGZO and visible near-infrared absorption of silicon. Under negative bias of -3 V, and the illumination of light with wavelength of 350 nm (500 nm), the photocurrent of pure IGZO/ SiO2/Si diode were found to be 8.81 10 A (1.04 10 A), while the illumination of light with wavelength of 350 nm (500 nm), the photocurrent of IGZO:GNFs (0.6 vol%)/SiO2/Si diode were found to be 4.39 10 A (4.90 10 A). The corresponding responsivity for IGZO/SiO2/Si and IGZO:GNFs (0.6 vol%)/SiO2/Si were found to be 0.109 A/W (0.164 A/W) and 0.146 A/W (0.216 A/W), respectively, for illumination of 350 nm (500 nm) light. Besides, the rising times for IGZO/SiO2/Si and IGZO:GNFS/SiO2/Si devices were found to be 8.95 ms and 8.05 ms, respectively. And the the decay times for IGZO/SiO2/Si and IGZO:GNFS/SiO2/Si devices were found to be 5.83 ms and 5.48 ms, respectively. The results showed that the response times of IGZO:GNS/SiO2/Si devices become better than that of IGZO/SiO2/Si devcies. Thus, we have successfully fabricated the IGZO:GNFs/SiO2/Si hetero-structured broadband photodetectors.
Lin, Ching-Che, and 林敬哲. "Study of Low Power Consumption and Ultra Broadband Detection of GaAs-based Photodetectors Working from Extreme Ultraviolet to Infrared Regime." Thesis, 2018. http://ndltd.ncl.edu.tw/handle/bf9cck.
Повний текст джерела國立臺灣大學
材料科學與工程學研究所
106
In this thesis, we study gallium arsenide (GaAs) and hot electron based Schottky diode of photodetector performing broadband detection capability working from extreme ultraviolet (EUV) to near-infrared (NIR) regime. This study demonstrated the hot electrons generated in structured gold (Au) or molybdenum (Mo) electrodes and propagating to metal/ semiconductor (GaAs) junction can be used for optical-electrical signal conversion for detecting light with photon energies below the bandgap of the semiconductor, especially in the spectral regime for optical telecommunication. Furthermore, we investigated the optical properties of GaAs and metal films in the EUV spectral regime to demonstrate a low power consumption of photodetector having an ultra-broadband detection ability. In the first part of this thesis, metal (Au, Mo)/ semiconductor (GaAs) based Schottky junction photodetector has been designed for hot electron collection from deep-trench/ thin metal (DTTM) based active antenna which takes the advantage of surface plasmon resonance and three-dimensional cavity effects. The DTTM-based devices have attractive properties of low reflection and high absorption in the near-infrared (NIR) regime, which enables the GaAs based devices breaking the limitation of bandgap of 870 nm (1.42 eV), extending its detection capability to the spectral regime of optical communication wavelengths of 1310 nm and 1550 nm. Taking the Mo/GaAs DTTM device as an example, the photocurrent responsivities at 1310 nm and 1550 nm are 0.27 mA/W and 0.16 mA/W, respectively, which is an order of magnitude smaller than that of the Si-based DTTM device. However, in terms of photovoltage detection, the response of the Mo/GaAs DTTM device at 1310 nm and 1550 nm are 577.47 (V/W) and 435.15 (V/W), respectively, which is 10,000 times larger than the photoelectric response of a Si-based DTTM device. We suggested that the photovoltage responsivity is significant for the high resistance and trap density of GaAs substrate. In the second part of this thesis, the concept of backside-illuminated schemes of metal (Au or Mo) film along with GaAs based DTTM structure were proposed. Compared with the front-illuminated devices, the backside-illuminated devices have three main advantages: (1) Hot carriers could be effectively generated and effective collection. (2) Devices performed broadband absorption covering the wavelengths of 1310 nm and 1550 nm, (3) Devices performance were not sensitive to the angle of incident performing omnidirectional detection properties. The measured results demonstrated that the responsivity of photocurrent and photovoltage are much higher than those of the front-illuminated devices. In the case of Mo/GaAs DTTM device, the photocurrent responsivity of the back-illuminated type are 0.95 mA/W and 0.25 mA/W at 1310 nm and 1550 nm, respectively, and the photovoltage responsivity are 781.52 (V/W) and 540.96 (V/W), respectively. In the third part of this thesis, because of high transmission at the wavelength of 13.5 nm, we suggested Mo is a suitable metal as the front electrode of Schottky photodetectors in the EUV spectral regime. Moreover, GaAs has a high absorption coefficient compared to Si in the EUV regime. Therefore, it is considered that Mo/GaAs-based Schottky diodes have a good opportunity to be used as a superior photodetectors working in EUV regime. In this study, we extended the Mo/GaAs DTTM devices operating in the EUV regime. Because of high resistance of GaAs substrate, the generated excess photocurrent in the EUV regime is much smaller than that of the Si-based photodetector.
Книги з теми "Broadband Photodetector"
Design of a Voltage Tunable Broadband Quantum Well Infrared Photodetector. Storming Media, 2002.
Знайти повний текст джерелаЧастини книг з теми "Broadband Photodetector"
Singh, Manjri, Gaurav Kumar, Nisha Prakash, Suraj P. Khanna, Prabir Pal, and Surinder P. Singh. "Broadband Photodetector with Lateral n-rGO/p+Si Heterojunction." In Springer Proceedings in Physics, 99–104. Cham: Springer International Publishing, 2019. http://dx.doi.org/10.1007/978-3-319-97604-4_16.
Повний текст джерелаRay, Samit K., Subhrajit Mukherjee, Tamal Dey, Subhajit Jana, and Elad Koren. "Two-Dimensional Material-Based Quantum Dots for Wavelength-Selective, Tunable, and Broadband Photodetector Devices." In Quantum Dot Photodetectors, 249–87. Cham: Springer International Publishing, 2021. http://dx.doi.org/10.1007/978-3-030-74270-6_6.
Повний текст джерелаSu, Yanjie. "Carbon-Based Heterojunction Broadband Photodetectors." In High-Performance Carbon-Based Optoelectronic Nanodevices, 91–129. Singapore: Springer Singapore, 2021. http://dx.doi.org/10.1007/978-981-16-5497-8_5.
Повний текст джерела"Photodetectors." In Broadband Circuits for Optical Fiber Communication, 25–43. Hoboken, NJ, USA: John Wiley & Sons, Inc., 2005. http://dx.doi.org/10.1002/0471726400.ch3.
Повний текст джерелаWang, Shufang, and Guangsheng Fu. "Broadband Photodetectors Based on c-Axis Tilted Layered Cobalt Oxide Thin Films." In Photodetectors. InTech, 2012. http://dx.doi.org/10.5772/36190.
Повний текст джерелаLI, SHENG S. "MULTI-COLOR, BROADBAND QUANTUM WELL INFRARED PHOTODETECTORS FOR MID-, LONG-, AND VERY LONG-WAVELENGTH INFRARED APPLICATIONS." In Intersubband Infrared Photodetectors, 169–209. WORLD SCIENTIFIC, 2003. http://dx.doi.org/10.1142/9789812775535_0005.
Повний текст джерелаCrisci, Teresa, Luigi Moretti, Mariano Gioffrè, and Maurizio Casalino. "Near-Infrared Schottky Silicon Photodetectors Based on Two Dimensional Materials." In Light-Emitting Diodes and Photodetectors - Advances and Future Directions [Working Title]. IntechOpen, 2021. http://dx.doi.org/10.5772/intechopen.99625.
Повний текст джерелаТези доповідей конференцій з теми "Broadband Photodetector"
Edelstein, Shahar, S. R. K. Chaitanya Indukuri, Noa Mazurski, and Uriel Levy. "Waveguide-Coupled Mid-IR Photodetector Based on Interlayer Excitons Absorption in a WS2/HfS2 Heterostructure." In CLEO: Science and Innovations. Washington, D.C.: Optica Publishing Group, 2022. http://dx.doi.org/10.1364/cleo_si.2022.sm3k.8.
Повний текст джерелаLi, Baojun, and Xianguang Yang. "Organic-inorganic broadband photodetector." In International Conference on Optical Instruments and Technology 2017: Micro/Nano Photonics: Materials and Devices, edited by Ya Sha Yi, Liquan Dong, Baojun Li, and Xingjun Wang. SPIE, 2018. http://dx.doi.org/10.1117/12.2288873.
Повний текст джерелаZhang, Yongzhe, Jianxi Yao, and Qi Jie Wang. "Broadband high photoresponse graphene photodetector." In Asia Communications and Photonics Conference. Washington, D.C.: OSA, 2013. http://dx.doi.org/10.1364/acp.2013.af2a.4.
Повний текст джерелаZhang, Yongzhe, Jianxi Yao, and Qi Jie Wang. "Broadband high photoresponse graphene photodetector." In Asia Communications and Photonics Conference. Washington, D.C.: OSA, 2013. http://dx.doi.org/10.1364/acpc.2013.af2a.4.
Повний текст джерелаCai, Xinghan, Ryan J. Suess, Andrei B. Sushkov, Thomas E. Murphy, Michael S. Fuhrer, and H. Dennis Drew. "Broadband Responsivity of a Graphene Photodetector." In CLEO: Science and Innovations. Washington, D.C.: OSA, 2013. http://dx.doi.org/10.1364/cleo_si.2013.cth4j.7.
Повний текст джерелаDutta, Achyut K., and M. Saif Islam. "Novel broadband photodetector for optical communication." In Optics East 2005, edited by Achyut K. Dutta, Yasutake Ohishi, Niloy K. Dutta, and Jesper Moerk. SPIE, 2005. http://dx.doi.org/10.1117/12.634119.
Повний текст джерелаHuang, Song, Jinze Cao, Jiaxin Cao, Qiang Wu, Weiqing Gao, and Jingjun Xu. "Black Silicon Photodetector with Broadband Spectral Photoresponsivity and High Gain by Ti-hyperdoping." In CLEO: Applications and Technology. Washington, D.C.: Optica Publishing Group, 2022. http://dx.doi.org/10.1364/cleo_at.2022.atu4c.7.
Повний текст джерелаGupta, Shuchi, Gerasimos Konstantatos, Gabriele Navickaite, Carles Monasterio, Juan José Piqueras, Raúl Pérez, Gregory Burwell, et al. "Colloidal Quantum Dots-Graphene based Broadband Photodetector." In nanoGe Fall Meeting 2018. València: Fundació Scito, 2018. http://dx.doi.org/10.29363/nanoge.fallmeeting.2018.134.
Повний текст джерелаRunge, Patrick, Felix Ganzer, Jonas Gläsel, Sebastian Wünsch, Sven Mutschall, and Martin Schell. "Broadband 145GHz Photodetector Module Targeting 200GBaud Applications." In Optical Fiber Communication Conference. Washington, D.C.: OSA, 2020. http://dx.doi.org/10.1364/ofc.2020.m2a.1.
Повний текст джерелаCakmakyapan, Semih, and Mona Jarrahi. "Plasmonics-enhanced broadband graphene photodetector (Conference Presentation)." In Photonic and Phononic Properties of Engineered Nanostructures VII, edited by Ali Adibi, Shawn-Yu Lin, and Axel Scherer. SPIE, 2017. http://dx.doi.org/10.1117/12.2253196.
Повний текст джерелаЗвіти організацій з теми "Broadband Photodetector"
Sobolewski, Roman, and Philippe M. Fauchet. Ultrafast Broadband Photodetectors for High-Tc Superconductive Optoelectronics. Fort Belvoir, VA: Defense Technical Information Center, January 1997. http://dx.doi.org/10.21236/ada344891.
Повний текст джерела