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Статті в журналах з теми "BiS2 Layers"
Sonachalam, Arumugam, and Kalai Selvan Ganesan. "Hydrostatic pressure effect on new BiS2 based Bi4O4S3 and ReO/FBiS2 (Re = La, Pr, Nd, Sm) Superconductors." MRS Advances 1, no. 17 (2016): 1157–68. http://dx.doi.org/10.1557/adv.2016.103.
Повний текст джерелаSuzuki, K., H. Usui, and K. Kuroki. "Minimum Model and its Theoretical Analysis for Superconducting Materials with BiS2 Layers." Physics Procedia 45 (2013): 21–24. http://dx.doi.org/10.1016/j.phpro.2013.04.042.
Повний текст джерелаJha, Rajveer, and Yoshikazu Mizuguchi. "Superconductivity in La2O2M4S6 -Type Bi-based Compounds: A Review on Element Substitution Effects." Condensed Matter 5, no. 2 (April 6, 2020): 27. http://dx.doi.org/10.3390/condmat5020027.
Повний текст джерелаSogabe, Ryota, Yosuke Goto, Tomohiro Abe, Chikako Moriyoshi, Yoshihiro Kuroiwa, Akira Miura, Kiyoharu Tadanaga, and Yoshikazu Mizuguchi. "Improvement of superconducting properties by high mixing entropy at blocking layers in BiS2-based superconductor REO0.5F0.5BiS2." Solid State Communications 295 (June 2019): 43–49. http://dx.doi.org/10.1016/j.ssc.2019.04.001.
Повний текст джерелаPugliese, G. M., L. Tortora, E. Paris, T. Wakita, K. Terashima, A. Puri, M. Nagao, et al. "The Local Structure of the BiS2 Layer in RE(O,F)BiS2 Determined by In-Plane Polarized X-ray Absorption Measurements." Physchem 1, no. 3 (November 10, 2021): 250–58. http://dx.doi.org/10.3390/physchem1030019.
Повний текст джерелаStrang, Tom. "Developing a GIS of Hazards for Canadian Cultural Institutions." Biodiversity Information Science and Standards 2 (June 15, 2018): e26305. http://dx.doi.org/10.3897/biss.2.26305.
Повний текст джерелаJiang, Wen Long, Yu Duan, Yi Zhao, Jingying Hou, and Shi Yong Liu. "A Novel Efficient Blue Organic Light Emitting Structure." Materials Science Forum 475-479 (January 2005): 3677–80. http://dx.doi.org/10.4028/www.scientific.net/msf.475-479.3677.
Повний текст джерелаZhou, W. Y., A. Meetsma, J. L. de Boer, and G. A. Wiegers. "Characterization and electrical transport properties of the misfit layer compounds (BiSe)1.10NbSe2 and (BiSe)1.09TaSe2." Materials Research Bulletin 27, no. 5 (May 1992): 563–72. http://dx.doi.org/10.1016/0025-5408(92)90144-o.
Повний текст джерелаAriyadi, Tamsir. "Mitigasi Keamanan Dynamic Host Control Protocl (DHCP) Untuk Mengurangi Serangan Pada Local Area Network (LAN)." INOVTEK Polbeng - Seri Informatika 3, no. 2 (November 27, 2018): 147. http://dx.doi.org/10.35314/isi.v3i2.455.
Повний текст джерелаTkhorzhevskiy, Ivan L., Anton D. Zaitsev, Petr S. Demchenko, Dmitry V. Zykov, Aleksei V. Asach, Anastasiia S. Tukmakova, Elena S. Makarova, Anna V. Novotelnova, Natalya S. Kablukova, and Mikhail K. Khodzitsky. "Properties of Bi and BiSb Nano-Dimensional Layers in Thz Frequency Range." Solid State Phenomena 312 (November 2020): 206–12. http://dx.doi.org/10.4028/www.scientific.net/ssp.312.206.
Повний текст джерелаДисертації з теми "BiS2 Layers"
Waechtler, Thomas, Steffen Oswald, Nina Roth, Alexander Jakob, Heinrich Lang, Ramona Ecke, Stefan E. Schulz, et al. "Copper Oxide Films Grown by Atomic Layer Deposition from Bis(tri-n-butylphosphane)copper(I)acetylacetonate on Ta, TaN, Ru, and SiO2." Universitätsbibliothek Chemnitz, 2009. http://nbn-resolving.de/urn:nbn:de:bsz:ch1-200900734.
Повний текст джерелаEs wird die thermische Atomlagenabscheidung (ALD) von Kupferoxidschichten, ausgehend von der unfluorierten, flüssigen Vorstufenverbindung Bis(tri-n-butylphosphan)kupfer(I)acetylacetonat, [(nBu3P)2Cu(acac)], sowie feuchtem Sauerstoff, auf Ta-, TaN-, Ru- und SiO2-Substraten bei Temperaturen < 160°C berichtet. Typisches temperaturunabhängiges Wachstum wurde zumindest bis 125°C beobachtet. Damit verbunden wurde für die metallischen Substrate ein Zyklenwachstum von ca. 0.1 Å erzielt sowie ein ALD-Fenster, das für Ru bis zu einer Temperatur von 100°C reicht. Auf SiO2 und TaN wurde das ALD-Fenster zwischen 110 und 125°C beobachtet, wobei auch bei 135°C noch gesättigtes Wachstum auf TaN gezeigt werden konnte. Die selbständige Zersetzung des Precursors ähnlich der chemischen Gasphasenabscheidung führte zu einem bimodalen Schichtwachstum auf Ta, wodurch gleichzeitig geschlossene Schichten und voneinander isolierte Cluster gebildet wurden. Dieser Effekt wurde auf TaN bis zu einer Temperatur von 130°C nicht beobachtet. Ebensowenig trat er im untersuchten Temperaturbereich auf Ru oder SiO2 auf. Der Nitrierungsgrad der TaN-Schichten beeinflusste hierbei das Schichtwachstum stark. Mit einer sehr guten Haftung der ALD-Schichten auf allen untersuchten Substratmaterialien erscheinen die Ergebnisse vielversprechend für die ALD von Kupferstartschichten, die für die elektrochemische Kupfermetallisierung in Leitbahnsystemen ultrahochintegrierter Schaltkreise anwendbar sind
Wimschulte, Sonja [Verfasser]. "Die Jakobiten am Exil-Hof der Stuarts in Saint-Germain-en-Laye 1688/89 bis 1712 : Migration, Exilerfahrung und Sinnstiftung / Sonja Wimschulte." Göttingen : Vandenhoeck & Ruprecht, 2018. http://www.v-r.de/.
Повний текст джерелаWaechtler, Thomas, Steffen Oswald, Nina Roth, Heinrich Lang, Stefan E. Schulz, and Thomas Gessner. "ALD of Copper and Copper Oxide Thin Films For Applications in Metallization Systems of ULSI Devices." Universitätsbibliothek Chemnitz, 2008. http://nbn-resolving.de/urn:nbn:de:bsz:ch1-200800914.
Повний текст джерелаAs a possible alternative for growing seed layers required for electrochemical Cu deposition of metallization systems in ULSI circuits, the atomic layer deposition (ALD) of Cu is under consideration. To avoid drawbacks related to plasma-enhanced ALD (PEALD), thermal growth of Cu has been proposed by two-step processes forming copper oxide films by ALD which are subsequently reduced.
This talk, given at the 8th International Conference on Atomic Layer Deposition (ALD 2008), held in Bruges, Belgium from 29 June to 2 July 2008, summarizes the results of thermal ALD experiments from [(nBu3P)2Cu(acac)] precursor and wet O2. The precursor is of particular interest as it is a liquid at room temperature and thus easier to handle than frequently utilized solids such as Cu(acac)2, Cu(hfac)2 or Cu(thd)2. Furthermore the substance is non-fluorinated, which helps avoiding a major source of adhesion issues repeatedly observed in Cu CVD.
As result of the ALD experiments, we obtained composites of metallic and oxidized Cu on Ta and TaN, which was determined by angle-resolved XPS analyses. While smooth, adherent films were grown on TaN in an ALD window up to about 130°C, cluster-formation due to self-decomposition of the precursor was observed on Ta. We also recognized a considerable dependency of the growth on the degree of nitridation of the TaN. In contrast, smooth films could be grown up to 130°C on SiO2 and Ru, although in the latter case the ALD window only extends to about 120°C. To apply the ALD films as seed layers in subsequent electroplating processes, several reduction processes are under investigation. Thermal and plasma-assisted hydrogen treatments are studied, as well as thermal treatments in vapors of isopropanol, formic acid, and aldehydes. So far these attempts were most promising using formic acid at temperatures between 100 and 120°C, also offering the benefit of avoiding agglomeration of the very thin ALD films on Ta and TaN. In this respect, the process sequence shows potential for depositing ultra-thin, smooth Cu films at temperatures below 150°C.
Chen, Yen-Chun, and 陳彥君. "A Proposed Mechanism of WS2 Formation by Atomic Layer Deposition Using Bis(tert-butylimino)bis(dimethylamino)tungsten and H2S." Thesis, 2018. http://ndltd.ncl.edu.tw/handle/wvdprk.
Повний текст джерелаLiao, Yi-Lin, and 廖一驎. "Research of Poly(oxyalkylene)-bis-amidoacids Intercalated Layered Double Hydroxides." Thesis, 2008. http://ndltd.ncl.edu.tw/handle/91005218050929107429.
Повний текст джерела國立臺灣大學
高分子科學與工程學研究所
96
This thesis concerns the organic modification for the Mg–Al layered double hydroxides (LDHs), more specifically, the intercalation profile of the clay with a series of poly(oxypropylene)-bis-amidoacids (POAs). A number of important issues are included in the thesis. (1)The intercalation of LDH by the POP-amidoacids and the spatial enlargement of the gallery up to 94 Å d spacing. (2)The critical intercalation of using the POP2000-2MA-2Na for expanding the LDH gallery. It provides a new way for manipulating nanomaterials and control of polymer conformations in the LDH confinement. (3)The amphiphilic property of POP2000-2MA-Na/LDH hybrid and their ability of lowering the toluene/water interfacial intension to 4.5 mN/m at the critical micelle concentration (CMC) of 0.01 wt%. (4)Newly discovered mechanisms that involving hydrogen-bonding and chelation. The different clays such as LDH, MMT and Mica are compared for the generality of the new mechanisms. (5)A pH dependence of the organo-LDH hybrids that particularly occurrence of layered structure collapse at low pH environment. The implication is an application of organic encapsulation and control release that could be developed for such a clay hybrid. In addition, the hybrids also possess thermal-sensitivity, that allows a fine dispersion at low temperature (5~10 oC) and aggregation at higher temperature (>20 oC).
Yang, Ting-ruei, and 楊庭瑞. "Interfacial reactions between Ni barrier layer and thermoelectric substrates: Ag2Te, (Bi,Sb)2Te3, and Bi2(Te,Se)3." Thesis, 2015. http://ndltd.ncl.edu.tw/handle/72675320497357823558.
Повний текст джерела國立清華大學
化學工程學系
103
Thermoelectric devices can convert heat into electricity directly, and have attracted enormous research interests. There are usually numerous solder (or braze) joints in thermoelectric devices. To prevent direct contact and interfacial reactions between solder (or braze) and thermoelectric materials, barrier layer is often used. Ni is the most commonly used barrier layer material. Examination of the interfacial reactions between Ni and thermoelectric substrates is fundamentally important for reliability assessment of the thermoelectric devices. This study investigates interfacial reactions between Ni and three kinds of thermoelectric materials: Ag2Te, (Bi,Sb)2Te3, and Bi2(Te,Se)3. The thermoelectric substrates are prepared with proper amounts of pure constituent elements, and are then plated with Ni. The thickness of Ni layer is 60μm. Ni3Te2, NiTe0.775 and NiTe2 are formed in the Ni/Te couple reacted at 200oC for 720 hours. Two reaction regions are observed in the Ni/Ag2Te couple reacted at 200oC for 720 hours. A continuous Ag layer is formed adjacent to the Ni substrate. The other reaction region is a two-phase finger-type mixture. The darker phase in this two-phase region is the Ni3Te2 phase and the other brighter phase is Ag2Te phase with Ni solubility. This study also investigates the interfacial reactions between Ni/Te couple and Ag2Te couple at 250 oC. Ni3Te2, NiTe0.775 and NiTe2 are also formed in the Ni/Te couple reacted at 250oC for 720 hours, and the thickness of reaction layer is about 102.6μm. Two reaction regions are observed in the Ni/Ag2Te couple reacted at 250oC for 720 hours. A continuous Ag layer is formed adjacent to the Ni substrate. Comparing with those in the Ni/Ag2Te 200oC reaction couple, a continuous Ni3Te2 reaction layer is formed adjacent to the Ag2Te substrate. The interfacial reactions between the Ni barrier layer and the P-type (Bi1-xSbx)2Te3 and n-type Bi2(Te1-ySey)3 thermoelectric materials at 300oC are examined. Two reaction phase layers are observed in the Ni/(Bi0.25Sb0.75)2Te3 couples reacted at 300oC. The phase layer adjacent to the Ni substrate is likely a Sb-Ni-Te ternary compound or the Ni3Te2 phase with significant Sb solubility.In the In the Ni/ Bi2(Te0.9Se0.1)3 couple reacted at 300oC two reaction phase layers are also found. The BiTe phase is adjacent to the Bi2(Te0.9Se0.1) substrate, while a Bi-Ni-Te ternary compound or the NiTe2 phase with Bi solubility is formed adjacent to the Ni substrate. It can be found that the thickness of the reaction layers in the Ni/Bi2(Te0.9Se0.1)3 couple is thicker than that in the Ni/(Bi0.25Sb0.75)2Te3. Furthermore, the reaction rate at 300oC is faster than that at 250oC.
Benaboud, R. "Etude thermodynamique et élaboration de dépôts métalliques (W-N-C, Ti-N-C) par PEALD (Plasma Enhanced Atomic Layer Deposition) pour la réalisation d'électrodes de capacités Métal/Isolant/Métal dans les circuits intégrés." Phd thesis, 2009. http://tel.archives-ouvertes.fr/tel-00441093.
Повний текст джерелаЧастини книг з теми "BiS2 Layers"
Greenblatt, M., and B. Raveau. "Intergrowth of Perovskite with “Bi2 O2 ” Layers: Aurivillius Phases." In Inorganic Reactions and Methods, 191. Hoboken, NJ, USA: John Wiley & Sons, Inc., 2007. http://dx.doi.org/10.1002/9780470145203.ch126.
Повний текст джерелаRivera-Rubero, Selimar, and Steven Baldelli. "Sum Frequency Generation Spectroscopy and Electrochemical Analysis of the 1-Butyl-3-methylimidazolium Bis{(trifluoromethyl)sulfonyl}amide Double Layer Structure on the Platinum Electrode." In ACS Symposium Series, 291–304. Washington DC: American Chemical Society, 2009. http://dx.doi.org/10.1021/bk-2009-1030.ch020.
Повний текст джерелаMizuguchi, Yoshikazu, and Aichi Yamashita. "Superconductivity in HEA-Type Compounds." In Advances in High-Entropy Alloys - Materials Research, Exotic Properties and Applications [Working Title]. IntechOpen, 2021. http://dx.doi.org/10.5772/intechopen.96156.
Повний текст джерелаHiehtus, W., H. Wolf, and G. Eichts. "Electrokinetic Characterization of Adsorbed Serum Albumin Layers at Glass." In VI. Internationale Tagung über Grenzflächenaktive Stoffe, Berlin, 22. bis 27. April 1985, 311–16. De Gruyter, 1986. http://dx.doi.org/10.1515/9783112484265-043.
Повний текст джерелаHaga, Masa-aki. "Surface-Confined Ruthenium Complexes Bearing Benzimidazole Derivatives: Toward Functional Devices." In Ruthenium - an Element Loved by Researchers [Working Title]. IntechOpen, 2021. http://dx.doi.org/10.5772/intechopen.97071.
Повний текст джерела"Karl Marx · Die britische Konstitution - Layard." In Karl Marx / Friedrich Engels: Werke, Artikel, Entwürfe, Januar bis Dezember 1855, 170–74. Akademie Verlag, 2020. http://dx.doi.org/10.1515/9783050063621-045.
Повний текст джерела"C. Am Exil-Hof 1701 bis 1712." In Die Jakobiten am Exil-Hof der Stuarts in Saint-Germain-en-Laye 1688/89 bis 1712, 161–210. Göttingen: Vandenhoeck & Ruprecht, 2018. http://dx.doi.org/10.13109/9783666101489.161.
Повний текст джерела"B. Am Exil-Hof 1692 bis 1701." In Die Jakobiten am Exil-Hof der Stuarts in Saint-Germain-en-Laye 1688/89 bis 1712, 87–160. Göttingen: Vandenhoeck & Ruprecht, 2018. http://dx.doi.org/10.13109/9783666101489.87.
Повний текст джерела"Karl Marx/Friedrich Engels · Zur Debatte über Layards Antrag - Der Krieg in der Krim." In Karl Marx / Friedrich Engels: Werke, Artikel, Entwürfe, Januar bis Dezember 1855, 420–21. Akademie Verlag, 2020. http://dx.doi.org/10.1515/9783050063621-112.
Повний текст джерелаWustneck, R., and H. O. Moller. "The Influence of Ionic Surfactants on the Thickness of Gelatin Foam Films and the Conectior with the Surface Rheological Behaviour of Mixed Adsorption Layers." In VI. Internationale Tagung über Grenzflächenaktive Stoffe, Berlin, 22. bis 27. April 1985, 491–96. De Gruyter, 1986. http://dx.doi.org/10.1515/9783112484265-072.
Повний текст джерелаТези доповідей конференцій з теми "BiS2 Layers"
Ishigaki, Kento, Jun Gouchi, Kiyoshi Torizuka, Sonachalam Arumugam, Ashok Kumar Ganguli, Ganesan Kalaiselvan, Zeba Haque, Gohil Singh Thakur, Laxmi Chand Gupta, and Yoshiya Uwatoko. "Pressure Effect on the BiS2 Layered Compound Eu3Bi2S4F4." In Proceedings of the International Conference on Strongly Correlated Electron Systems (SCES2019). Journal of the Physical Society of Japan, 2020. http://dx.doi.org/10.7566/jpscp.30.011058.
Повний текст джерелаSakatani, Ryotaro, Ryuji Higashinaka, Tatsuma D. Matsuda, and Yuji Aoki. "Anomalous Magnetoresistance of BiS2-based Layered Superconductor Eu3Bi2S4F4." In Proceedings of the International Conference on Strongly Correlated Electron Systems (SCES2019). Journal of the Physical Society of Japan, 2020. http://dx.doi.org/10.7566/jpscp.30.011059.
Повний текст джерелаJordan, R. H., A. Dodabalapur, M. Strukelj, L. J. Rothberg, R. E. Slusher, and T. M. Miller. "High Efficiency White and Colored Organic Electroluminescence." In Organic Thin Films for Photonic Applications. Washington, D.C.: Optica Publishing Group, 1995. http://dx.doi.org/10.1364/otfa.1995.thc.1.
Повний текст джерелаLovejoy, Steven M., Susan Ermer, Doris S. Leung, Carl W. Dirk, Priya Kalamegham, Lixia Zhang, and Christopher R. Moylan. "Design and Synthesis of Soluble Thermally Stable Nonlinear Optical Chromophores Based on the Dicyanomethylenepyran Moiety." In Organic Thin Films for Photonic Applications. Washington, D.C.: Optica Publishing Group, 1995. http://dx.doi.org/10.1364/otfa.1995.tud.5.
Повний текст джерелаKoneru, Abhishek, and Krishnendu Chakrabarty. "An inter-layer interconnect BIST solution for monolithic 3D ICs." In 2018 IEEE 36th VLSI Test Symposium (VTS). IEEE, 2018. http://dx.doi.org/10.1109/vts.2018.8368635.
Повний текст джерелаHaider, Muhammad Istiaque, Benjamin Church, Pradeep Rohatgi, and Nathan Salowitz. "Investigation Into Etching Effects on the Interface Strength Between Nickel Titanium and Bismuth Tin for the Creation of Metal Matrix Self Healing Composites." In ASME 2022 Conference on Smart Materials, Adaptive Structures and Intelligent Systems. American Society of Mechanical Engineers, 2022. http://dx.doi.org/10.1115/smasis2022-90256.
Повний текст джерелаProssinger, Hermann, Jakub Binter, Kamila Machová, Daniel Říha, and Silvia Boschetti. "Machine Learning Detects Pairwise Associations between SOI and BIS/BAS Subscales, making Correlation Analyses Obsolete." In Human Interaction and Emerging Technologies (IHIET-AI 2022) Artificial Intelligence and Future Applications. AHFE International, 2022. http://dx.doi.org/10.54941/ahfe100902.
Повний текст джерелаLiu, Shun-Wei, Chin-Ti Chen, and Jiun-Haw Lee. "Organic bifunctional device employing bis(naphthylphenylaminophenyl)fumaronitrile as absorption/emitting layer." In 2011 IEEE 4th International Nanoelectronics Conference (INEC). IEEE, 2011. http://dx.doi.org/10.1109/inec.2011.5991736.
Повний текст джерелаForrest, S. R., E. I. Haskal, Z. Shen, and P. E. Burrows. "Exciton Confinement in Organic Multiple Quantum Wells." In Quantum Optoelectronics. Washington, D.C.: Optica Publishing Group, 1995. http://dx.doi.org/10.1364/qo.1995.qthb2.
Повний текст джерелаGutierrez, Miguel A., Michael Gydesen, Caitlin Marcellus, Ivan Puchades, Brian Landi, and Patricia Iglesias. "Effect of Carbon Nanotube-Phosphinate Ionic Liquid Thin Boundary Layer on the Tribological Behavior of Aluminum Alloy in Steel-on-Aluminum Contact." In ASME 2018 International Mechanical Engineering Congress and Exposition. American Society of Mechanical Engineers, 2018. http://dx.doi.org/10.1115/imece2018-86875.
Повний текст джерела