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Статті в журналах з теми "Basal stacking faults"

Автор: Grafiati

Опубліковано: 29 березня 2025

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1

Byrapa, Sha Yan, Fang Zhen Wu, Huan Huan Wang, Balaji Raghothamachar, Gloria Choi, Shun Sun, Michael Dudley, et al. "Deflection of Threading Dislocations with Burgers Vector c/c+a Observed in 4H-SiC PVT–Grown Substrates with Associated Stacking Faults." Materials Science Forum 717-720 (May 2012): 347–50. http://dx.doi.org/10.4028/www.scientific.net/msf.717-720.347.

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Анотація:

A review is presented of Synchrotron White Beam X-ray Topography (SWBXT) studies of stacking faults observed in PVT-Grown 4H-SiC crystals. A detailed analysis of various interesting phenomena were performed and one such observation is the deflection of threading dislocations with Burgers vector c/c+a onto the basal plane and associated stacking faults. Based on the model involving macrostep overgrowth of surface outcrops of threading dislocations, SWBXT image contrast studies of these stacking faults on different reflections and comparison with calculated phase shits for postulated fault vectors, has revealed faults to be of basically four types: (a) Frank faults; (b) Shockley faults; (c) Combined Shockley + Frank faults with fault vector s+c/2; (d) Combined Shockley + Frank faults with fault vector s+c/4.

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2

Taniguchi, Chisato, Aiko Ichimura, Noboru Ohtani, Masakazu Katsuno, Tatsuo Fujimoto, Shinya Sato, Hiroshi Tsuge, and Takayuki Yano. "Temperature Dependent Stability of Stacking Fault in Highly Nitrogen-Doped 4H-SiC Crystals." Materials Science Forum 858 (May 2016): 109–12. http://dx.doi.org/10.4028/www.scientific.net/msf.858.109.

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Анотація:

The formation of basal plane stacking faults in highly nitrogen-doped 4H-SiC crystals was theoretically investigated. A novel theoretical model based on the so-called quantum well action (QWA) mechanism was proposed; the model considers several factors, which were overlooked in a previously proposed model, and explains well the annealing-induced formation of double layer Shockley-type stacking faults in highly nitrogen-doped 4H-SiC crystals. We further revised the model to consider the carrier distribution in the depletion regions adjacent to the stacking fault and were successful in explaining the shrinkage of stacking faults during annealing at even higher temperatures.

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3

Jezierska, Elżbieta, and Jolanta Borysiuk. "HRTEM and LACBED of Zigzag Boundaries in GaN Epilayers." Solid State Phenomena 203-204 (June 2013): 24–27. http://dx.doi.org/10.4028/www.scientific.net/ssp.203-204.24.

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Анотація:

Defects recognition in GaN epilayers was performed using HRTEM and LACBED images. Edge type dislocations, basal plane and prismatic stacking faults were determined from HRTEM analysis. Stacking mismatch boundaries on zigzag steps were found and examined using LACBED patterns in bright and dark field. For stacking faults Bragg lines split into a main and a subsidiary line. The fault plane and displacement vector can be identified from trace analysis performed on LACBED patterns.

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4

Chen, S. J. "Imaging dislocation shear band in sapphire." Proceedings, annual meeting, Electron Microscopy Society of America 50, no. 1 (August 1992): 340–41. http://dx.doi.org/10.1017/s0424820100122101.

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Анотація:

The deformation of sapphire at low temperatures and high strain rates produces basal twins and dislocation activity in various slip planes which appear as distinctive shear bands, where the dislocations line up in a row (figure 1). The most common shear band is in the basal plane (the lower band in figures 1a through 1c) and is made up of partial dislocations of the type 1/3<1010>(0001). These dislocations are all associated with the same stacking fault and the sum of three of these faults returns the structure to perfect stacking. The faults can be distinguished in bright field in the (1014) reflections (figure 1b) and clearly, in the lower band, the stacking fault disappears when three dislocations have traversed.

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5

Katsuno, Masakazu, Masashi Nakabayashi, Tatsuo Fujimoto, Noboru Ohtani, Hirokatsu Yashiro, Hiroshi Tsuge, Takashi Aigo, Taizo Hoshino, and Kohei Tatsumi. "Stacking Fault Formation in Highly Nitrogen-Doped 4H-SiC Substrates with Different Surface Preparation Conditions." Materials Science Forum 600-603 (September 2008): 341–44. http://dx.doi.org/10.4028/www.scientific.net/msf.600-603.341.

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The stacking fault formation in highly nitrogen-doped n+ 4H-SiC single crystal substrates during high temperature treatment has been investigated in terms of the surface preparation conditions of substrates. Substrates with a relatively large surface roughness showed a resistivity increase after annealing at 1100°C, which was confirmed to be caused by the formation and expansion of double Shockley-type basal plane stacking faults in the substrates. The occurrence of the stacking faults largely depended on the surface preparation conditions of the substrates, which indicates that the primary nucleation sites of stacking faults exist in the near-surface regions of substrates. In this regard, mechano-chemically polished (MCP) substrates with a minimum surface roughness (< 0.3 nm) exhibited no resistivity increase and very few stacking faults after annealing even when the nitrogen concentration of the substrates exceeded 1×1019 cm-3.

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6

Bauer, Sondes, Sergey Lazarev, Martin Bauer, Tobias Meisch, Marian Caliebe, Václav Holý, Ferdinand Scholz, and Tilo Baumbach. "Three-dimensional reciprocal space mapping with a two-dimensional detector as a low-latency tool for investigating the influence of growth parameters on defects in semipolar GaN." Journal of Applied Crystallography 48, no. 4 (June 16, 2015): 1000–1010. http://dx.doi.org/10.1107/s1600576715009085.

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A rapid nondestructive defect assessment and quantification method based on X-ray diffraction and three-dimensional reciprocal-space mapping has been established. A fast read-out two-dimensional detector with a high dynamic range of 20 bits, in combination with a powerful data analysis software package, is set up to provide fast feedback to crystal growers with the goal of supporting the development of reduced defect density GaN growth techniques. This would contribute strongly to the improvement of the crystal quality of epitaxial structures and therefore of optoelectronic properties. The method of normalized three-dimensional reciprocal-space mapping is found to be a reliable tool which shows clearly the influence of the parameters of the metal–organic vapour phase epitaxial and hydride vapour phase epitaxial (HVPE) growth methods on the extent of the diffuse scattering streak. This method enables determination of the basal stacking faults and an exploration of the presence of other types of defect such as partial dislocations and prismatic stacking faults. Three-dimensional reciprocal-space mapping is specifically used in the manuscript to determine basal stacking faults quantitatively and to discuss the presence of partial dislocations. This newly developed method has been applied to semipolar GaN structures grown on patterned sapphire substrates (PSSs). The fitting of the diffuse scattering intensity profiles along the stacking fault streaks with simulations based on a Monte Carlo approach has delivered an accurate determination of the basal plane stacking fault density. Three-dimensional reciprocal-space mapping is shown to be a method sensitive to the influence of crystallographic surface orientation on basal stacking fault densities during investigation of semipolar (11{\overline 2}2) GaN grown on anr-plane (1{\overline 1}02) PSS and semipolar (10{\overline 1}1) GaN grown on ann-plane (11{\overline 2}3) PSS. Moreover, the influence of HVPE overgrowth at reduced temperature on the quality of semipolar (11{\overline 2}2) GaN has been studied.

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7

Lazarev, Sergey, Sondes Bauer, Tobias Meisch, Martin Bauer, Ingo Tischer, Mykhailo Barchuk, Klaus Thonke, Vaclav Holy, Ferdinand Scholz, and Tilo Baumbach. "Three-dimensional reciprocal space mapping of diffuse scattering for the study of stacking faults in semipolar (\bf 11{\overline 2}2) GaN layers grown from the sidewall of anr-patterned sapphire substrate." Journal of Applied Crystallography 46, no. 5 (September 11, 2013): 1425–33. http://dx.doi.org/10.1107/s0021889813020438.

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Анотація:

Three-dimensional reciprocal space mapping of semipolar (11{\overline 2}2) GaN grown on stripe-patternedr-plane (1{\overline 1}02) sapphire substrates is found to be a powerful and crucial method for the analysis of diffuse scattering originating from stacking faults that are diffracting in a noncoplanar geometry. Additionally, by measuring three-dimensional reciprocal space maps (3D-RSMs) of several reflections, the transmission electron microscopy visibility criteria could be confirmed. Furthermore, similar to cathodoluminescence, the 3D-RSM method could be used in future as a reliable tool to distinguish clearly between the diffuse scattering signals coming from prismatic and from basal plane stacking faults and from partial dislocations in semipolar (11{\overline 2}2) GaN. The fitting of the diffuse scattering intensity profile along the stacking fault streaks with a simulation based on the Monte Carlo approach has delivered an accurate determination of the basal plane stacking fault density. A reduction of the stacking fault density due to the intercalation of an SiN interlayer in the GaN layer deposited on the sidewall of the pre-patterned sapphire substrate has led to an improvement of the optoelectronic properties, influenced by the crystal quality, as has been demonstrated by a locally resolved cathodoluminescence investigation.

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8

Hu, Shanshan, Zeyu Chen, Qianyu Cheng, Balaji Raghothamachar, and Michael Dudley. "Stacking Fault Analysis for the Early-Stages of PVT Growth of 4H-SiC Crystals." ECS Meeting Abstracts MA2024-02, no. 36 (November 22, 2024): 2518. https://doi.org/10.1149/ma2024-02362518mtgabs.

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With wide band gap, high thermal conductivity, and high breakdown field, silicon carbide, typically 4H-SiC, has steadily become the material of choice for next generation high-power electronic devices[1]. However, the presence of defects especially dislocations and stacking faults (SFs), such as threading screw dislocations (TSDs), threading edge dislocations (TEDs), threading mixed dislocations (TMDs), basal plane dislocations (BPDs), Frank dislocations, Shockley SFs and Frank SFs, are hindering the widespread application of 4H-SiC device due to their harmful effects on the reliability of high-performance SiC power devices[2]. In particular, SFs are particularly deleterious as they degrade the blocking and on-state conduction performance and/or reliability of devices[3]. A recent approach to lowering defect densities is to closely examine the early-stages of crystal growth when many defects are nucleated. Recently, we have reported on the expansion of Shockley stacking faults in the facet region during the early growth stage[4]. Continuing these early-stage studies, we seek to better understand the effects of various growth parameters on resulting defect structures, especially stacking fault formations. Multiple short duration growths have been carried out under varying conditions of nucleation temperature, thermal gradients, and N incorporation. In this study, three types of Frank type or Frank+Shockley stacking faults are observed distributed across the growth surface: Type A, stacking faults bounded by 2 opposite sign Frank type dislocations; Type B, stacking faults bounded by a pair of same sign Frank-type dislocations. As higher partial pressures of N2 are deployed, the occurrence of the Type B stacking fault is found to be suppressed (Figure 1); Type C, stacking faults regions shown as “carrot” defects on the as-grown surface of crystal (Figure 2). The formation mechanisms of these stacking fault formation will be suggested. The implications of these observations to achieve better control of the PVT growth process and resultant defect reduction will be discussed. Figure 1

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9

Agarwal, Anant K., Sumi Krishnaswami, Jim Richmond, Craig Capell, Sei Hyung Ryu, John W. Palmour, Bruce Geil, Dimos Katsis, Charles Scozzie, and Robert E. Stahlbush. "Influence of Basal Plane Dislocation Induced Stacking Faults on the Current Gain in SiC BJTs." Materials Science Forum 527-529 (October 2006): 1409–12. http://dx.doi.org/10.4028/www.scientific.net/msf.527-529.1409.

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SiC BJTs show instability in the I-V characteristics after as little as 15 minutes of operation. The current gain reduces, the on-resistance in saturation increases, and the slope of the output characteristics in the active region increases. This degradation in the I-V characteristics continues with many hours of operation. It is speculated that this phenomenon is caused by the growth of stacking faults from certain basal plane dislocations within the base layer of the SiC BJT. Stacking fault growth within the base layer is observed by light emission imaging. The energy for this expansion of the stacking fault comes from the electron-hole recombination in the forward biased base-emitter junction. This results in reduction of the effective minority carrier lifetime, increasing the electron-hole recombination in the base in the immediate vicinity of the stacking fault, leading to a reduction in the current gain. It should be noted that this explanation is only a suggestion with no conclusive proof at this stage.

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10

Anzalone, Ruggero, Nicolò Piluso, Andrea Severino, Simona Lorenti, Giuseppe Arena, and Salvo Coffa. "Dislocations Propagation Study Trough High-Resolution 4H-SiC Substrate Mapping." Materials Science Forum 963 (July 2019): 276–79. http://dx.doi.org/10.4028/www.scientific.net/msf.963.276.

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In this work a deep investigation of the dislocation on 4H-SiC substrate has been shown. The dislocation intersecting the surface were enhanced by KOH etching at 500 deg. C. performed on whole 6 inches substrate. A comparison between basal plane dislocations and threading screw dislocations in the substrate with the defects in the epitaxial layer (mainly stacking faults and carrots) was performed. The comparison between shows a correlation between basal plane dislocations density and stacking faults density maps.

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11

Suzuki, Mayumi, and Kouichi Maruyama. "Effects of Stacking Faults on High Temperature Creep Behavior in Mg-Y-Zn Based Alloys." Materials Science Forum 638-642 (January 2010): 1602–7. http://dx.doi.org/10.4028/www.scientific.net/msf.638-642.1602.

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Compressive creep behavior of hot-rolled (40%) Mg-Y and Mg-Y-Zn alloys are investigated at 480 ~ 650 K. Creep strength is substantially improved by the simultaneous addition of yttrium and zinc. The minimum creep rate of Mg-0.9mol%Y-0.04mol%Zn (WZ301) alloy decreases to 1/10 lower than that of Mg-1.1mol%Y (W4) alloy at 650 K. Activation energy for creep in W4 and WZ301 alloys are more than 200 kJ/mol at the temperature range of 480 ~ 550 K. These values are higher than the activation energy for self-diffusion coefficient in magnesium (135 kJ/mol). Many stacking faults (planar defects, PDs) are only observed on the basal planes of the matrix in Mg-Y-Zn ternary alloys. Stacking fault energy is considered to decrease by the multiple-addition of yttrium and zinc. The size and density of these planar defects depend on solute content, aging condition. TEM observation has been revealed that the decreasing of the stacking fault energy affects the distribution of dislocations during creep. Many a-dislocations on basal planes are extended significantly. Dislocation motion is restricted significantly by both of these two types of stacking faults (planar type and extended dislocations).

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12

Qi, Haoyuan, Xiaodan Chen, Eva Benckiser, Meng Wu, Georg Cristiani, Gennady Logvenov, Bernhard Keimer, and Ute Kaiser. "Formation mechanism of Ruddlesden–Popper faults in compressive-strained ABO₃ perovskite superlattices." Nanoscale 13, no. 48 (2021): 20663–69. http://dx.doi.org/10.1039/d1nr06830j.

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Анотація:

In an oxide perovskite superlattice, Ruddlesden–Popper faults were found to form via Shockley partials bounded by basal plane stacking faults. The formation of such Ruddlesden–Popper faults could facilitate the relaxation of compressive strain.

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13

Nishiguchi, Taro, Tomoaki Furusho, Toshiyuki Isshiki, Koji Nishio, Hiromu Shiomi, and Shigehiro Nishino. "Pair-Generation of the Basal-Plane-Dislocation during Crystal Growth of SiC." Materials Science Forum 600-603 (September 2008): 329–32. http://dx.doi.org/10.4028/www.scientific.net/msf.600-603.329.

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4H-SiC was grown on 4H-SiC (1100) substrates by sublimation boule growth, and transmission electron microscopic investigation was carried out. Two basal-plane-dislocations in the same basal plane (the BPD pair), whose dislocation line extend toward the [1100] growth direction, were observed as aligned along [0001]. The density of the BPD pairs along [0001] was in the same order with that of the stacking faults in the sample. A threading screw-dislocation was observed in between aligned BPD pairs. It is proposed that the interaction between stacking faults and threading screw-dislocations on the grown surface generates the BPD pairs. Since a high density of stacking faults is inherent to the growth on the substrates perpendicular to (0001), keeping an atomically flat grown surface is important to prevent the generation of the threading screw-dislocations, and thus to suppress the generation of the BPD pairs in case of the growth on (1100) and/or (11 2 0) substrates.

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14

Pezoldt, Jörg, and Andrei Alexandrovich Kalnin. "Defects and Polytype Instabilities." Materials Science Forum 924 (June 2018): 147–50. http://dx.doi.org/10.4028/www.scientific.net/msf.924.147.

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Анотація:

A model based on the generation and recombination of defect was developed to describe the stability of stacking faults and basal plane dislocation loops in crystals with layered polytype structures. The stability of the defects configuration was analysed for stacking faults surrounded by Shockley and Frank partial dislocation as well as Shockley dislocation dipoles with long range elastic fields. This approach allows the qualitative prediction of defect subsystems in polytype structure in external fields.

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15

Wang, C. M., W. Jiang, W. J. Weber, and L. E. Thomas. "Defect clustering in GaN irradiated with O+ ions." Journal of Materials Research 17, no. 11 (November 2002): 2945–52. http://dx.doi.org/10.1557/jmr.2002.0427.

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Transmission electron microscopy (TEM) was used to study microstructures formed in GaN irradiated with 600-keV O+ ions at room temperature. Three types of defect clusters were identified in the irradiated GaN: (i) basal-plane stacking faults with dimensions ranging from 5 to 30 nm, (ii) pyramidal dislocation loops, and (iii) local regions of highly disordered material. High-resolution TEM imaging clearly revealed that one type of the basal-plane stacking faults corresponded to insertion of one extra Ga–N basal plane in the otherwise perfect GaN lattice. The interpretation of these results indicated that interstitials of both Ga and N preferentially condensed on the basal plane to form a new layer of Ga–N under these irradiation conditions. The formation of these extended defects and their interactions with the point defects produced during irradiation contributed to a dramatic increase in the dynamic recovery of point defects in GaN at room temperature.

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16

Wampler, W. R., and S. M. Myers. "Ion Channeling Analysis of Gallium Nitride Implanted with Deuterium." MRS Internet Journal of Nitride Semiconductor Research 4, S1 (1999): 403–4. http://dx.doi.org/10.1557/s1092578300002799.

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Ion channeling and transmission electron microscopy were used to examine the microstructure of GaN implanted with deuterium (D) at high (>1 at. %) and low (< 0.1 at. %) D concentrations. At high concentrations, bubbles and basal-plane stacking faults were observed. Ion channeling showed the D was disordered relative to the GaN lattice, consistent with precipitation of D2 into bubbles. At low D concentrations, bubbles and stacking faults are absent and ion channeling shows that a large fraction of the D occupies sites near the center of the c-axis channel.

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17

Shrivastava, Amitesh, Peter G. Muzykov, and Tangali S. Sudarshan. "Inverted Pyramid Defects in 4H-SiC Epilayers." Materials Science Forum 615-617 (March 2009): 125–28. http://dx.doi.org/10.4028/www.scientific.net/msf.615-617.125.

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In this work we identified the nucleation sites of inverted pyramid defects in 4H-SiC epilayers using AFM and KOH etching and proposed a mechanism for its formation. Partial dislocations, bounding the stacking faults, mostly aligned along the <11-20> directions, were found at the base of the inverted pyramid defects. It is shown that the basal plane dislocations, serve as nucleation centers for stacking faults, and eventually the formation of inverted pyramid defects. A geometrical model is formulated to explain the formation mechanism of inverted pyramid defects.

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18

Veliadis, Victor, Harold Hearne, W. Chang, Joshua D. Caldwell, Eric J. Stewart, Megan Snook, R. S. Howell, Damian Urciuoli, Aivars J. Lelis, and C. Scozzie. "Recovery of Bipolar-Current Induced Degradations in High-Voltage Implanted-Gate Junction Field Effect Transistors." Materials Science Forum 717-720 (May 2012): 1013–16. http://dx.doi.org/10.4028/www.scientific.net/msf.717-720.1013.

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Electron-hole recombination-induced stacking faults have been shown to degrade the electrical characteristics of SiC power pin and MPS diodes and DMOSFETs with thick drift epitaxial layers. In this paper, we investigate the effects of bipolar injection induced stacking faults on the electrical characteristics of p+ ion-implanted high-voltage vertical-channel JFETs with 100-μm drift epilayers. The JFETs were stressed at a fixed gate-drain bipolar current density of 100 A/cm2 for five hours, which led to degradation of the forward gate-drain p-n junction and on-state conduction. The degradation was fully reversed by annealing at 350 °C for 96 hours. Forward and reverse gate-source, transfer, reverse gate-drain, and blocking voltage JFET characteristics exhibit no degradation with bipolar stress. Non-degraded characteristics remain unaffected by annealing events. Consequently, should minority carrier injection occur in JFETs operating at elevated temperatures no stacking fault induced degradations are expected. This eliminates the need for specialty substrates with suppressed densities of basal plane dislocations in the fabrication of high-voltage SiC JFETs for high temperature applications.

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19

Khranovskyy, V., M. O. Eriksson, G. Z. Radnoczi, A. Khalid, H. Zhang, P. O. Holtz, L. Hultman, and R. Yakimova. "Photoluminescence study of basal plane stacking faults in ZnO nanowires." Physica B: Condensed Matter 439 (April 2014): 50–53. http://dx.doi.org/10.1016/j.physb.2013.12.020.

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20

Sun, Qi, Qiwei Zhang, Bin Li, Xiyan Zhang, Li Tan, and Qing Liu. "Non-dislocation-mediated basal stacking faults inside 101−1 twins." Scripta Materialia 141 (December 2017): 85–88. http://dx.doi.org/10.1016/j.scriptamat.2017.07.036.

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21

Zhang, X. Y., B. Li, and Q. Liu. "Non-equilibrium basal stacking faults in hexagonal close-packed metals." Acta Materialia 90 (May 2015): 140–50. http://dx.doi.org/10.1016/j.actamat.2015.02.036.

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22

Jiao, Yufeng, Jinghuai Zhang, Pengyu Kong, Zhongwu Zhang, Yongbin Jing, Jinpeng Zhuang, Wei Wang, et al. "Enhancing the performance of Mg-based implant materials by introducing basal plane stacking faults." Journal of Materials Chemistry B 3, no. 37 (2015): 7386–400. http://dx.doi.org/10.1039/c5tb01060h.

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In this study, a novel Mg–6Ho–0.5Zn alloy (wt%) containing profuse basal plane stacking faults is prepared with the SFs exhibiting uniform corrosion behaviour, low corrosion rate and high mechanical properties.

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23

Nagano, Masahiro, Hidekazu Tsuchida, Takuma Suzuki, Tetsuo Hatakeyama, Junji Senzaki, and Kenji Fukuda. "Formation of Extended Defects in 4H-SiC Induced by Ion Implantation/Annealing." Materials Science Forum 615-617 (March 2009): 477–80. http://dx.doi.org/10.4028/www.scientific.net/msf.615-617.477.

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Defect formation during the ion implantation/annealing process in 4H-SiC epilayers is investigated by synchrotron reflection X-ray topography. The 4H-SiC epilayers are subjected to an activation annealing process after Aluminum ions being implanted in the epilayers. The formation modes of extended defects induced by the implantation/annealing process are classified into the migration of preexisting dislocations and the generation of new dislocations/stacking faults. The migration of preexisting basal plane dislocations (BPDs) takes place corresponding to the ion implantation interface or the epilayer/substrate interface. The generation of new dislocations/stacking faults is confirmed as the formation of Shockley faults near the surface of the epilayer and BPD half-loops in the epilayer.

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24

Мынбаева, М. Г., А. Н. Смирнов та К. Д. Мынбаев. "Оптические свойства квазиобъемных кристаллов нитрида галлия со структурой высокоориентированной текстуры". Физика и техника полупроводников 55, № 7 (2021): 554. http://dx.doi.org/10.21883/ftp.2021.07.51015.9648.

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The results of a study of the optical properties of gallium nitride samples with a highly oriented texture structure grown without the use of traditional semiconductor or sapphire substrates are presented. It is shown that the stacking faults contained in the GaN blocks of the texture of the studied material are self-organized heteropolytype nanostructures, and that the effective luminescence in the ultraviolet spectral region associated with stacking faults I1 in the basal plane is determined by optical transitions of excitons localized near such natural defects in the single-crystalline bulk of the blocks of the GaN texture.

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25

Aigo, Takashi, Wataru Ito, Hiroshi Tsuge, Hirokatsu Yashiro, Masakazu Katsuno, Tatsuo Fujimoto, and Wataru Ohashi. "4H-SiC Epitaxial Growth on 2° Off-Axis Substrates using Trichlorosilane (TCS)." Materials Science Forum 717-720 (May 2012): 101–4. http://dx.doi.org/10.4028/www.scientific.net/msf.717-720.101.

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4H-SiC epitaxial growth on 2˚ off-axis substrates using trichlorosilane (TCS) is presented. Good surface morphology was obtained for epilayers with C/Si ratios of 0.6 and 0.8 at a growth temperature of 1600°C. The triangle defect density was reduced to a level below 5 cm-2 at 1600°C and below 1 cm-2 at 1625°C for a C/Si ratio of 0.8. Photoluminescence (PL) measurements were carried out with band-pass filters of 420 nm, 460 nm, and 480 nm to detect stacking faults. A stacking fault density of below 5 cm-2 was achieved at 1600°C and 1625°C with a C/Si ratio of 0.8. The optimal conditions for TCS growth were a C/Si ratio of 0.8 and a growth temperature of 1600°C. The evaluation of stacking faults and etch pit density indicated that the use of 2˚ off-axis substrates and TCS is effective for reducing basal plane dislocations. Comparing these results to those using silane (SiH4) with HCl added, it was demonstrated that TCS is much more suitable for obtaining high-quality epilayers on 2º off-axis substrates.

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26

Nishio, Johji, Chiharu Ota, and Ryosuke Iijima. "Transmission Electron Microscopy Study of Single Shockley Stacking Faults in 4H-SiC Expanded from Basal Plane Dislocation Segments Accompanied by Threading Edge Dislocations on both Ends." Materials Science Forum 1062 (May 31, 2022): 258–62. http://dx.doi.org/10.4028/p-6410dm.

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Double-rhombic shaped single Shockley stacking faults (1SSFs) were considered to have a converted threading edge dislocation (TED) on the shallower side of the initial basal plane dislocation segments. However, the structural analysis using transmission electron microscopy (TEM) revealed other possible configuration of the double-rhombic 1SSFs expanded from basal plane dislocations (BPDs) of which both ends were connected with two TEDs.

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27

Yang, Zhi Qing, Wei Wei Hu, and Heng Qiang Ye. "Mg-Zn-Y Alloys with Long-Period Stacking Ordered Phases: Deformation, Creep, Solute Segregation and Strengthening Mechanisms at Elevated Temperatures." Materials Science Forum 879 (November 2016): 2204–9. http://dx.doi.org/10.4028/www.scientific.net/msf.879.2204.

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Mg-Zn-Y alloys with long-period stacking ordered (LPSO) phases have superior strength at elevated temperatures. We studied plastic deformation and creep behavior of a Mg97Zn1Y2 (at.%) alloy. Deformation kinking of the LPSO phase plays an important role in strengthening the alloy during compression at elevated temperatures. Growth stacking faults with Zn/Y segregation can act as obstacles to non-basal slip and deformation twinning in Mg matrix. The tensile creep strain was only about 0.01% under a tensile stress of 70MPa for 100h at 200 °C, demonstrating excellent creep resistance of this alloy. Generation and motion of basal dislocations led to bending of LPSO phase during tensile creep of the Mg97Zn1Y2 (at.%) alloy. Plastic deformation in Mg grains was mostly achieved through basal slip during creep at temperatures below 200 °C, while non-basal slip through the generation and motion of “a + c” dislocations was activated with increasing the temperature to 200 °C and above. Dissociation of dislocations and Suzuki segregation on basal planes occurred widely in Mg matrix, which hindered dislocation motion and thus played an important role in preventing Mg grains from softening during deformation at elevated temperatures. In addition, Cottrell atmospheres were observed along dislocations in plastically deformed LPSO phase, impeding motion of dislocations. The superior strength and creep resistance of the Mg97Zn1Y2 (at.%) alloy at elevated temperatures are thus associated with the LPSO phase, stacking faults in Mg grains, formation of Cottrell atmospheres in LPSO and occurrence of Suzuki segregation in Mg.

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28

Wright, A. F. "Basal-plane stacking faults and polymorphism in AlN, GaN, and InN." Journal of Applied Physics 82, no. 10 (November 15, 1997): 5259–61. http://dx.doi.org/10.1063/1.366393.

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29

Tischer, Ingo, Manuel Frey, Matthias Hocker, Lisa Jerg, Manfred Madel, Benjamin Neuschl, Klaus Thonke, et al. "Basal plane stacking faults in semipolar AlGaN: Hints to Al redistribution." physica status solidi (b) 251, no. 11 (July 24, 2014): 2321–25. http://dx.doi.org/10.1002/pssb.201451252.

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30

Zhang, X., Seo Young Ha, M. Benamara, Marek Skowronski, Joseph J. Sumakeris, Sei Hyung Ryu, Michael J. Paisley, and Michael J. O'Loughlin. "Structure of Carrot Defects in 4H-SiC Epilayers." Materials Science Forum 527-529 (October 2006): 327–32. http://dx.doi.org/10.4028/www.scientific.net/msf.527-529.327.

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Structure of the “carrot” defects in 4H-SiC homoepitaxial layers deposited by CVD has been investigated by plan-view and cross-sectional transmission x-ray topography, cross-sectional transmission electron microscopy, atomic force microscopy, and KOH etching. The carrot defects nucleate at the substrate/epilayer interface at the emergence points of threading screw dislocations propagating from the substrate. The typical defect consists of two stacking faults: one in the prismatic plane with second one in the basal plane. The faults are connected by a stair-rod dislocation with Burgers vector 1/n[10-10] with n>3 at the cross-over. The basal plane fault is of Frank-type. Carrot defects are electrically active as evidenced by contrast in EBIC images indicating enhanced carrier recombination rate. Presence of carrot defects in the p-i-n diodes results in higher pre-breakdown reverse leakage current and approximately 50% lower breakdown voltage compared to the nominal value.

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31

Kamata, Isaho, Hidekazu Tsuchida, Toshiyuki Miyanagi, and Tomonori Nakamura. "Development of Non-Destructive In-House Observation Techniques for Dislocations and Stacking Faults in SiC Epilayers." Materials Science Forum 527-529 (October 2006): 415–18. http://dx.doi.org/10.4028/www.scientific.net/msf.527-529.415.

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We have developed non-destructive in-house observation techniques for dislocations and stacking faults (SFs) in 4H-SiC epilayers. Low temperature photoluminescence (PL) mapping was carried out at 100K using He-Cd laser (325 nm) as an exciation source. PL mapping at ~420 nm was used to investigate basal plane dislocations (BPDs), Shockley stacking faults (SSFs) and boundary, while PL mapping at ~470 nm and 100K obtained in-grown SF images. In addition, using a high-resolution laboratory X-ray topography system with a four-crystal collimator, we succeeded in recording BPDs propagating along [11-20]. From the measurement results, new evaluation techniques for dislocations and SFs other than KOH etching and Synchotron radiation topography were demonstrated on Si- and C-face 4H-SiC epilayers.

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32

Wang, Huan Huan, Fang Zhen Wu, Sha Yan Byrapa, Yu Yang, Balaji Raghothamachar, Michael Dudley, Gil Y. Chung, et al. "Study of V and Y Shape Frank-Type Stacking Faults Formation in 4H-SiC Epilayer." Materials Science Forum 778-780 (February 2014): 332–37. http://dx.doi.org/10.4028/www.scientific.net/msf.778-780.332.

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Nomarski optical microscopic, KOH etching and synchrotron topographic studies are presented of faint needle-like surface morphological features in 4H-SiC homoepitaxial layers. Grazing incidence synchrotron white beam x-ray topographs show V shaped features which transmission topographs reveal to enclose 1/4[0001] Frank-type stacking faults. Some of these V-shaped features have a tail associated with them and are referred to as Y-shaped defects. Geometric analysis of the size and shape of the V-shaped faults indicates that they are fully contained within the epilayer and appear to be nucleated at the substrate/epilayer interface. Detailed analysis shows that the positions of the V-shaped stacking faults match with the positions of c-axis threading dislocations with Burgers vectors of c or c+a in the substrate and thus appear to result from the deflection of these dislocations onto the basal plane during epilayer growth. Similarly, the Y-shaped defects match well with the substrate surface intersections of c-axis threading dislocations with Burgers vectors of c or c+a in the substrate which were deflected onto the basal plane during substrate growth. Based on the observed morphology of these defect configurations we propose a model for their formation mechanism.

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33

Cancellara, L., S. Hagedorn, S. Walde, D. Jaeger, and M. Albrecht. "Formation of voids and their role in the recovery of sputtered AlN during high-temperature annealing." Journal of Applied Physics 131, no. 21 (June 7, 2022): 215304. http://dx.doi.org/10.1063/5.0088948.

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The structural recovery of AlN grown by reactive sputtering on a sapphire substrate during high-temperature annealing is studied by means of transmission electron microscopy and secondary ion mass spectrometry. The as-grown film shows high-density planar defects, such as basal and prismatic stacking faults, caused by the limited diffusion length of the adatoms and, thus, presents a columnar structure. The presence of high-density nanopipes is associated with the presence of unintentional oxygen impurities. Based on the atomic resolution transmission electron microscopy analysis, we show that basal and prismatic stacking faults vanish in the films via a climb mechanism and describe this process as the nucleation of jogs promoted by the diffusion of vacancies. The nanopipes present in the as-grown film transform into faceted voids and act as a beneficial source of excess vacancies that promote dislocation annihilation by climb. The transformation of nanopipes to faceted voids resembles the transition from open channel pores to close faceted pores, which has been observed in porous silicon and can be described in terms of a classical sintering theory.

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34

Miyanagi, Toshiyuki, Hidekazu Tsuchida, Isaho Kamata, Tomonori Nakamura, R. Ishii, Koji Nakayama, and Yoshitaka Sugawara. "Observation of Shrinking and Reformation of Shockley Stacking Faults by PL Mapping." Materials Science Forum 527-529 (October 2006): 375–78. http://dx.doi.org/10.4028/www.scientific.net/msf.527-529.375.

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We provide evidence of shrinking of Shockley-type stacking faults (SSFs) in the SiC epitaxial layer by high temperature annealing. Photoluminescence (PL) mapping in combination with high-power laser irradiation makes it possible to investigate the formation of SSFs, which lie between a pair of partial dislocations formed by dissociation of a basal plane dislocation (BPD), without fabrication of pin diodes. Using this technique, we investigated the annealing effect on SSFs. Comparing before and after annealing at 600°C for 10 min, it became obvious that high-temperature annealing results in shrinking of the faulted area of the SSFs. The SSFs form into the same features as those before annealing when high-power laser irradiation is performed again on the same area. This result shows that the faulted area of SSFs shrinks by 600°C annealing but the nuclei of SSFs (BPDs) do not disappear.

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35

Huang, Huei-Min, Yung-Chi Wu, and Tien-Chang Lu. "Exciton Localization Behaviors of Basal Stacking Faults in a-Plane AlGaN Alloys." Journal of The Electrochemical Society 158, no. 5 (2011): H491. http://dx.doi.org/10.1149/1.3561422.

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36

Nandi, Prithwish K., and Jacob Eapen. "Cascade Overlap in hcp Zirconium: Defect Accumulation and Microstructure Evolution with Radiation using Molecular Dynamics Simulations." MRS Proceedings 1514 (2013): 37–42. http://dx.doi.org/10.1557/opl.2013.122.

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ABSTRACTMolecular dynamics simulations are performed to investigate the defect accumulation and microstructure evolution in hcp zirconium (Zr) – a material which is widely used as clad for nuclear fuel. Cascades are generated with a 3 keV primary knock-on atom (PKA) using an embedded atom method (EAM) potential with interactions modified for distances shorter than 0.1 Å. With sequential cascade simulations we show the emergence of stacking faults both in the basal and prism planes, and a Shockley partial dislocation on the basal plane.

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37

El Hageali, Sami, Nadeem Mahadik, Robert Stahlbush, Harvey Guthrey, Steven Johnston, Jake Soto, Bruce Odekirk, Brian Gorman, and Mowafak Al-Jassim. "Stacking Faults Originating from Star-Defects in 4H-SiC." Defect and Diffusion Forum 426 (June 6, 2023): 29–33. http://dx.doi.org/10.4028/p-0yob2s.

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Intense efforts are currently in progress to study various sources of basal plane dislocations (BPDs) in SiC epitaxial layers. BPDs can generate Shockley-type stacking faults (SSFs) in SiC epitaxial layers, which have been shown to be associated with the degradation of power devices. This study shows that the star-shaped defect can be a source of several BPDs in the epitaxial layer. We investigate the complex microstructure of the star defect, the generation of BPDs, and expansion of SSFs using various complementary microscopy and optical techniques. We show direct evidence that star-defects can be a nucleation point of single-SSFs that can expand at the core of the defect. Newly found secondary dislocation arrays extending over a few centimeters away are found to be emanating from the primary arms of the star defect. The presence of such dislocation walls and the expansion of single-SSFs will affect the yield of numerous die on a wafer. Further understanding of the formation mechanism of stacking faults generated from star-defects as provided in this study helps understand their effect on SiC-based devices, which is crucial to assess device reliability.

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38

Sarney, W. L., L. Salamanca-Riba, V. Ramachandran, R. M. Feenstra, and D. W. Greve. "TEM Study of the Morphology Of GaN/SiC (0001) Grown at Various Temperatures by MBE." MRS Internet Journal of Nitride Semiconductor Research 5, S1 (2000): 238–44. http://dx.doi.org/10.1557/s1092578300004336.

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GaN films grown on SiC (0001) by MBE at various substrate temperatures (600° - 750° C) were characterized by RHEED, STM, x-ray diffraction, AFM and TEM. This work focuses on the TEM analysis of the films’ features, such as stacking faults and dislocations, which are related to the substrate temperature. There are several basal plane stacking faults in the form of cubic inclusions for samples grown at low temperatures compared to those grown at high temperatures. The dislocation density is greatest for the film grown at 600°C, and it steadily decreases with increasing growth temperatures. Despite the presence of various defects, x-ray analysis shows that the GaN films are of high quality. The double crystal rocking curve full width at half maximum (FWHM) for the GaN (0002) peak is less than 2 arc-minutes for all of the films we measured and it decreases with increasing growth temperature.

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39

FENG GUO-GUANG. "CONVERGENT-BEAM ELECTRON DIFFRACTION STUDY OF TRANSVERSE BASAL STACKING FAULTS IN LAYER STRUCTURES." Acta Physica Sinica 35, no. 2 (1986): 274. http://dx.doi.org/10.7498/aps.35.274.

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40

Zhang, Dalong, Lin Jiang, Julie M. Schoenung, Subhash Mahajan, and Enrique J. Lavernia. "TEM study on relationship between stacking faults and non-basal dislocations in Mg." Philosophical Magazine 95, no. 34 (October 27, 2015): 3823–44. http://dx.doi.org/10.1080/14786435.2015.1100764.

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41

Di, Zhang, T. Yamamoto, H. Inui, and M. Yamaguchi. "Characterization of stacking faults on basal planes in intermetallic compounds La5Ni19 and La2Ni7." Intermetallics 8, no. 4 (April 2000): 391–97. http://dx.doi.org/10.1016/s0966-9795(99)00121-1.

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42

Potin, V., B. Gil, S. Charar, P. Ruterana, and G. Nouet. "HREM study of basal stacking faults in GaN layers grown over sapphire substrate." Materials Science and Engineering: B 82, no. 1-3 (May 2001): 114–16. http://dx.doi.org/10.1016/s0921-5107(00)00709-1.

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43

Kabra, V. K., D. Pandey, and S. Lele. "On the characterization of basal plane stacking faults in N9R and N18R martensites." Acta Metallurgica 36, no. 3 (March 1988): 725–34. http://dx.doi.org/10.1016/0001-6160(88)90106-x.

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44

Paduano, Qing S., David W. Weyburne, and Alvin J. Drehman. "An X-ray diffraction technique for analyzing basal-plane stacking faults in GaN." physica status solidi (a) 207, no. 11 (September 7, 2010): 2446–55. http://dx.doi.org/10.1002/pssa.201026258.

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45

Li, Shi Bo, and Hong Xiang Zhai. "A Soft Ceramic Ti₃SiC₂ with Microscale Plasticity at Room Temperature." Key Engineering Materials 280-283 (February 2007): 1343–46. http://dx.doi.org/10.4028/www.scientific.net/kem.280-283.1343.

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Microscale plasticity of Ti3SiC2 was investigated by Vickers hardness indentation. The surface layer of the hardness indentations was removed by acid solution to observe microstructure beneath the indentations, where a large number of bending, delamination and kinking grains were found. These features suggest that Ti3SiC2 is able to consume microdamage around the indentations. Numerous basal plane dislocations and stacking faults lying in Ti3SiC2 grains or accumulating at grain boundaries were observed. The basal plane dislocations play an important role in the microscale plastic deformation. The plasticity and damage tolerance for Ti3SiC2 at room temperature should be attributed to multiple energy absorbing mechanisms: grains bending, delamination, kink-band formation, and the basal plane slip, etc.

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46

Chung, Gil, Robert Viveros, Charles Lee, Andrey Soukhojak, Vladimir Pushkarev, Qian Yu Cheng, Balaji Raghothamachar, and Michael Dudley. "Basal Plane Dislocation Slip Band Characterization and Epitaxial Propagation in 4H SiC." Defect and Diffusion Forum 425 (May 31, 2023): 51–56. http://dx.doi.org/10.4028/p-35058b.

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Correlation of X-ray topography and production line defect inspection tools has demonstrated the capability of in-line tools to differentiate between geometrically comparable basal plane slip bands (BPSB) and bar stacking faults (BSF) on 4H SiC wafers. BPSBs were found to propagate through epitaxial growth at high rates and with similar photoluminescence signatures to post-epitaxy BSFs. Molten KOH etching post-epitaxy provided evidence of distinguishing features between BPSBs and BSFs, suggesting that the defects were indeed correctly identified by in-line defect inspection tools pre-epitaxy.

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47

Zhou, Chuxin, та L. W. Hobbs. "Defect structures of Nb1+αS2 sulfidation scales". Proceedings, annual meeting, Electron Microscopy Society of America 50, № 1 (серпень 1992): 38–39. http://dx.doi.org/10.1017/s042482010012059x.

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One of the major purposes in the present work is to study the high temperature sulfidation properties of Nb in severe sulfidizing environments. Kinetically, the sulfidation rate of Nb is satisfactorily slow, but the microstructures and non-stoichiometry of Nb1+αS2 challenge conventional oxidation/sulfidation theory and defect models of non-stoichiometric compounds. This challenge reflects our limited knowledge of the dependence of kinetics and atomic migration processes in solid state materials on their defect structures.Figure 1 shows a high resolution image of a platelet from the middle portion of the Nb1+αS2 scale. A thin lamellar heterogeneity (about 5nm) is observed. From X-ray diffraction results, we have shown that Nb1+αS2 scale is principally rhombohedral structure, but 2H-NbS2 can result locally due to stacking faults, because the only difference between these 2H and 3R phases is variation in the stacking sequence along the c axis. Following an ABC notation, we use capital letters A, B and C to represent the sulfur layer, and lower case letters a, b and c to refer to Nb layers. For example, the stacking sequence of 2H phase is AbACbCA, which is a ∼12Å period along the c axis; the stacking sequence of 3R phase is AbABcBCaCA to form an ∼18Å period along the c axis. Intergrowth of these two phases can take place at stacking faults or by a shear in the basal plane normal to the c axis.

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48

Ha, Seoyong, and J. P. Bergman. "Degradation of SiC High-Voltage pin Diodes." MRS Bulletin 30, no. 4 (April 2005): 305–7. http://dx.doi.org/10.1557/mrs2005.78.

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AbstractThe recent discovery of forward-voltage degradation in SiC pin diodes has created an obstacle to the successful commercialization of SiC bipolar power devices. Accordingly, it has attracted intense interest around the world. This article summarizes the progress in both the fundamental understanding of the problem and its elimination.The degradation is due to the formation of Shockley-type stacking faults in the drift layer, which occurs through glide of bounding partial dislocations. The faults gradually cover the diode area, impeding current flow. Since the minimization of stress in the device structure could not prevent this phenomenon, its driving force appears to be intrinsic to the material. Stable devices can be fabricated by eliminating the nucleation sites, namely, dissociated basal-plane dislocations in the drift layer.Their density can be reduced by the conversion of basal-plane dislocations propagating from the substrate into threading dislocations during homoepitaxy.

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49

Zhang, Ze Hong, A. E. Grekov, Priyamvada Sadagopan, S. I. Maximenko, and Tangali S. Sudarshan. "Performance of Silicon Carbide PiN Diodes Fabricated on Basal Plane Dislocation-Free Epilayers." Materials Science Forum 527-529 (October 2006): 371–74. http://dx.doi.org/10.4028/www.scientific.net/msf.527-529.371.

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The nucleation sites of stacking faults (SFs) during forward current stress operation of 4H-SiC PiN diodes were investigated by the electron beam induced current (EBIC) mode of scanning electron microscopy (SEM), and the primary SF nucleation sites were found to be basal plane dislocations (BPDs). Damage created on the diode surface also acts as SF nucleation sites. By using a novel BPD-free SiC epilayer, and avoiding surface damage, PiN diodes were fabricated which did not exhibit SF formation under current stressing at 200A/cm2 for 3 hours.

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50

Chen, Yi, Xian Rong Huang, Ning Zhang, Michael Dudley, Joshua D. Caldwell, Kendrick X. Liu, and Robert E. Stahlbush. "Synchrotron X-Ray Topographic Studies of Recombination Activated Shockley Partial Dislocations in 4H-Silicon Carbide Epitaxial Layers." Materials Science Forum 600-603 (September 2008): 357–60. http://dx.doi.org/10.4028/www.scientific.net/msf.600-603.357.

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Electron-hole recombination activated Shockley partial dislocations bounding expanding stacking faults and their interactions with threading dislocations have been studied in 4H-SiC epitaxial layers using synchrotron x-ray topography. The bounding partials appear as white stripes or narrow dark lines in back-reflection X-ray topographs recorded using the basal plane reflections. Such contrast variations are attributable to the defocusing/focusing of the diffracted X-rays due to the edge component of the partial dislocations, which creates a convex/concave distortion of the basal planes. Simulation results based on the ray-tracing principle confirm our argument. The sign of the partial dislocations can be subsequently determined.

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