Дисертації з теми "Bande III"
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Jacopin, Gwenolé. "Nanofils de semiconducteurs à grande énergie de bande interdite pour des applications optoélectroniques." Phd thesis, Université Paris Sud - Paris XI, 2012. http://tel.archives-ouvertes.fr/tel-00746091.
Armougom, Julie. "Nouvelles sources optiques pour la détection d’espèces chimiques dans la bande III." Thesis, Université Grenoble Alpes (ComUE), 2018. http://www.theses.fr/2018GREAT077/document.
Laser spectrometry by differential absorption is a well-known technique for standoff detection of chemical species in the atmosphere. The longwave infrared region (LWIR), ranging from 8 to 12 µm is particularly interesting because the absorption bands of many chemical species are intense and non-overlapping. In order to detect those species in the LWIR, there is a need for sources that are spectrally narrow, widely tunable, and delivers high energies. The sources based on second order nonlinear optics are the only technology able to meet those requirements. In this work, we will present the experimental results on two parametric architectures that allows emission in the LWIR for lidar measurements. The first one consists in emitting a beam directly in the LWIR by pumping nonlinear crystals with 2 µm pump lasers. The second architecture consists in amplifying the signal and idler beams coming from a 2 µm OPO, before converting them into the LWIR by difference frequency generation. Those sources are based on the association of new technologies and have the potential to offer a viable solution to a lack of sources emitting in the LWIR
Ridaoui, Mohamed. "Fabrication et caractérisation de MOSFET III-V à faible bande interdite et canal ultra mince." Thèse, Université de Sherbrooke, 2017. http://hdl.handle.net/11143/11118.
Abstract : Silicon-based devices dominate the semiconductor industry because of the low cost of this material, its technology availability and maturity. However, silicon has physical limitations, in terms of mobility and saturation velocity of the carriers, which limit its use in the high frequency applications and low supply voltage i.e. power consumption, in CMOS technology. Therefore, III-V materials like InGaAs and InAs are good candidates because of the excellent electron mobility of bulk materials (from 5000 to 40.000 cm2 /V.s) and the high electron saturation velocity. We have fabricated ultra-thin body (UTB) InAs/InGaAs MOSFET with gate length of 150 nm. The frequency response and ON-current of the presented MOSFETs is measured and found to have comparable performances to the existing state of the art MOSFETs as reported by the other research groups. The UTB MOSFETs were fabricated by self-aligned method. Two thin body conduction channels were explored, In0,75Ga0,25As and a composite InAs/In0,53Ga0,47As. A thin upper barrier layer consisting of InP (3nm) is inserted between the channel and the oxide layers to realized a buried channel. Finally, the Al2O3 (4 nm) was deposited by the atomic layer deposition (ALD) technique. It is well known that the source and drain (S/D) contact resistances of InAs MOSFETs influence the devices performances. Therefore, in our ultra-thin body (UTB) InAs MOSFETs design, we have engineered the contacts to achieve good ohmic contact resistances. Indeed, for this UTB architecture the use of ion implantation technique is incompatible with a low thermal budget and cannot allow to obtain low resistive contacts. To overcome this limitation, an adapted technological approach to define ohmic contacts is presented. To that end, we chose low thermal budget (250°C) silicide-like technology based on Nickel metal. Finally, we have studied and analyzed the resistance of the alloy between Nickel and III-V (Rsheet). MOSFET with two different epilayer structures (In0,75Ga0,25As and a composite InAs/In0,53Ga0,47As) were fabricated with a gate length (LG) of 150 nm. There were few difference of electrical performance of these two devices. We obtained a maximum drain current (ION) of 730 mA/mm, and the extrinsic transconductance (GM, MAX) showed a peak value of 500 mS/mm. The devices exhibited a current gain cutoff frequency fT of 100 GHz and maximum oscillation frequency fmax of 60 GHz for drain to source voltage (VDS) of 0.7 V.
Demangeot, Francois. "Spectrometrie raman des excitations elementaires et de leur couplage dans les nitrures d'elements iii a large bande interdite." Toulouse 3, 1998. http://www.theses.fr/1998TOU30256.
Thenot, Isabelle. "Réalisation d'un oscillateur paramétrique optique émettant directement dans la bande III de l'infrarouge avec un pompage à 1,064 micron." Paris 11, 2001. http://www.theses.fr/2001PA112242.
Different technological areas are currently waiting for coherent tunable nanosecond sources over spectral range 8 till 12mM. Solutions usually proposed necessitate two frequency conversion steps from a fixed-frequency laser, leading to complex performance monitoring of the system. This thesis aims to achieve such a source in only one non-linear step. An analysis of the non-linear crystal allowing this approach, we built a simply resonant optical parametric oscillator (OPO), based upon silver gallium sulfide (AgGaS2), and pumping in critical type II phase matching at 1. 064mM wavelength by a10HZ Q-switched Nd:YAG laser. This OPO generates nanosecond pulses on wavelengths between 7. 5 and 9. 3mM. The maximum photonic conversion output is close to 10%. In order to complete the study of infrared dedicated non-linear crystals, a second harmonic generation device has been made for studying non-linear features of lithium thioindate (LiInS2). The value of non-linear coefficient d24 (or d35) of LiInS2 crystal deducted from our measures is about 7. 5pm/V, namely about 1/√3 times the value of coefficient d14 (or d36) of AgGaS2 crystal
Galibert, Jean. "Transport quantique dans des semiconducteurs de type iii-v : effet shubnikov-de haas dans l'antimoniure de gallium, effet magnetophonon dans l'antimoniure d'indium." Toulouse 3, 1987. http://www.theses.fr/1987TOU30286.
Levenson, Juan Ariel. "Étude des non-linéarités optiques dynamiques dans les semiconducteurs III-V." Paris 11, 1988. http://www.theses.fr/1988PA112300.
We have investigated the carrier interactions in highly photoexcited GaAs/GaAlAs. Multiple-Quantum Wells at law-temperatures. The experimental setup consists of two optical parametric generators independently tunable throughout the infrared, giving 10 ps long pulses with peak intensity of 100 MW/cm2. By using the experimental techniques of nonlinear spectroscopy, we are able to isolate the optical nonlinearities due to many-body effects (the screening of the coulomb interaction and the renormalization of the sub-bands), from those that originate from the filling of the phase-space of the carriers. The contribution of phase-space filling to the optical nonlinearity is shown to be greater than that of many-body effects. Our results also indicate that Coulombic screening is weaker in the quasi-2D systems than in bulk materials. The magnitude of the renormalization of the higher-energy sub-bands, obtained through non-linear absorption techniques, is smaller by one order of magnitude when compared with the plasma renormalization observed in luminescence experiments. This results underlines the shortcommings of the usual approximation for the Band-Gap Renormalization as a rigid shift of the whole band structure when states far above the Fermi level are under consideration. The dynamics of the inter-subband relaxation was resolved in our experiments and the characteristic rime for this process was found to be of the order of 20 ps
Desières, Yohan. "Conception et études optiques de composants micro-photoniques sur matériaux III-V à base de structures à bande interdite de photon." Lyon, INSA, 2001. http://theses.insa-lyon.fr/publication/2001ISAL0081/these.pdf.
The thesis focus on a new type of waveguides that are able to guide light at the wavelength scale thanks to the index periodicity of their cladding. These waveguides are called photonic crystal waveguide and can lead to strong scale reductions of usual photonic crystal waveguide and can lead to strong scale reductions of usual photonic circuits. The FDTD method is developed to design and explore the properties of this waveguides. Experimental demonstration of waveguiding is obtained using a guided luminescence technique and diffraction gratings. A better understanding of the propagation characteristics comes from the comparison between experimental datas and FDTD results. Propagation losses of are found to be quite high (around 10-20dB/100 micrometer). Their origins are however clarified, leading to some solutions for loss-reduced waveguides. Finally, the coupling between a photonic crystal waveguide and a photonic crystal microcavity is investigated for compact wavelength filtering
Desières, Yohan Benyattou Taha. "Conception et études optiques de composants micro-photoniques sur matériaux III-V à base de structures à bande interdite de photon." Villeurbanne : Doc'INSA, 2004. http://docinsa.insa-lyon.fr/these/pont.php?id=desieres.
Beeler, Mark. "Ingénierie quantique de nanostructures à base de semi-conducteurs III-nitrures pour l'optoélectronique infrarouge." Thesis, Université Grenoble Alpes (ComUE), 2015. http://www.theses.fr/2015GREAY044/document.
GaN/Al(Ga)N nanostructures have emerged during the last decade as promising materials for new intersubband (ISB) optoelectronics devices, with the potential to cover the whole infrared (IR) spectrum. These technologies rely on electron transitions between quantum-confined states in the conduction band of nanostructures –quantum wells (QWs), quantum dots (QDs), nanowires (NWs). The large conduction band offset between III-N compounds, and their sub-ps ISB recovery times make them appealing for ultrafast telecommunication devices and for fast IR optoelectronics in the 3-5 µm band. Furthermore, the large energy of GaN LO phonon (92 meV) opens prospects for room-temperature THz quantum cascade lasers and ISB devices covering the 5-10 THz band, inaccessible to GaAs. A variety of GaN-based ISB optoelectronic devices have recently been demonstrated, including photodetectors, switches and electro-optical modulators. However, a number of issues remain open, particularly concerning the extension towards longer wavelengths and the improvement of electrically pumped devices performance. One of the main challenges to extend the GaN-ISB technology towards the far-IR comes from the polarization-induced internal electric field, which imposes an additional confinement that increases the energetic distance between the electronic levels in the QWs. In order to surmount this constraint, I propose alternative multi-layer QW designs that create a pseudo-square potential profile. The robustness of the designs in terms of variations due to growth uncertainties, and the feasibility of their integration in devices architectures requiring resonant tunneling transport are discussed. Experimental realizations by molecular-beam epitaxy displaying TM-polarized THz absorption are presented. A quantum cascade laser design incorporating pseudo-square QWs is introduced. An alternative approach to obtain square potential profiles is the use of nonpolar orientations. In this thesis, I compare GaN/Al(Ga)N multi-quantum wells grown on a and m nonpolar bulk GaN showing that the best results in terms of structural and optical (interband and ISB) performance are obtained for m-plane structures. Room-temperature ISB absorption in the range of 1.5–5.8 µm is demonstrated, the longer wavelength limit being established by the second order of the Reststrahlen band in GaN. As ISB devices are pushed towards higher efficiencies, the control of carrier relaxation becomes a key aspect for device engineering. Longer intraband lifetimes have been proven to exist in laterally confined systems, which motivates studies to incorporate NWs as active elements in ISB devices. Furthermore, the large NW surface-to-volume ratio allows misfit strain to be elastically released, extending the viable active region size and composition beyond the limits of planar systems or QDs. In this thesis, I report the experimental observation of TM-polarized IR absorption assigned to the s-pz intraband transition in Ge-doped GaN/AlN nanodisks inserted in self-assembled GaN NWs. Results are compared with theoretical calculations accounting for the 3D strain distribution, surface charges and many-body effects.STAR
Guériaux, Vincent. "Contribution à l'étude expérimentale et théorique des photodétecteurs infrarouge à multipuits quantiques couvrant la bande spectrale 3 – 20 µm." Phd thesis, Université Paris-Diderot - Paris VII, 2010. http://tel.archives-ouvertes.fr/tel-00547679.
Marzin, Jean-Yves. "Effets des deformations sur les proprietes optiques des super-reseaux contraints a base de semi-conducteurs iii-v." Paris 7, 1987. http://www.theses.fr/1987PA077132.
Gureghian, Clément. "Étude et réalisation de photodétecteurs nanostructurés pour l'infrarouge." Electronic Thesis or Diss., université Paris-Saclay, 2024. http://www.theses.fr/2024UPASP029.
The research work presented in this manuscript is part of the technological monitoring efforts led at the ONERA on the increase of performances of infrared photodetectors. Technological readiness of Super-lattice based detectors has evolved from lab-only research topic to mature technology capable of being awarded contracts. Its operability for focal plan array detectors, its high absorption leading to good quantum efficiencies and its low dark current are a few of the advantages that make this technology a good competitor to the other technologies available for infrared detection. However, contrary to its theoretical material superiority this technology generally stays behind MCT based detectors in terms dark current and external quantum efficiencies. Dark current is one of the key challenges for infrared photodetection since it limits the use of the device to cryogenic temperatures. Such device therefore requires the use of a cryocooler. This goes against the size weight and power requirements and these tend to be bigger heavier and to consume more energy, the lower the temperature required for the detector is. Different solutions are currently in study in order to reduce the dark current of detectors and increase their operating temperature for the same performances. To reduce the thickness of the detector, which is generally of several microns, is such solution. The consequent absorption decrease can be mitigated by the use of resonant structures in which the detector is integrated. Such light-trapping structures are often made out of metal and increase the complexity of the manufacturing process. However, these structures can be made out of heavily doped semiconductor that are more compatible with the epitaxy of the detectors. In this manuscript, we present the design and characterization of three all-semiconductor devices including a detector: one including a 550 nanometer-thick detector in a Fabry-Perot resonator and two multiresonant structures, one based respectively on a 300 nanometer-thick detector, the second one based on a 1.6 micron-thick detector, in which the detector is placed between a grating and a mirror. The Fabry-Perot sample (C2032-FP) has been characterized both optically and electro-optically. Its results are compared to those of a reference sample (C2000-REF) including the same detector without resonant cavity. Optical characterization showed the resonance. Electro-optical characterization showed an advantageous evolution of dark current with respect to temperature compared to literature. It also showed a twofold increase of the external quantum efficiency at the resonance compared to the reference structure, coherent with the 2.7 factor increase available in the literature for Fabry-Perot resonator. Optical characterization of the multiresonant structures showed the dependence of the etching process to the crystalline direction and that the insufficient etching was detrimental to the final absorption spectra. It proved the suitability of such structure for wide band absorption either polarization sensitive or not. Finally, we proposed theoretical study of quantum well-based structures to achieve electrical tunability of the reflected or transmitted spectrum through quantum confined Stark effect. These simulations led us to propose two structures: one based on guided mode resonance and the other based on plasmonic resonance. Design of a device allowing tenability of the detector could be based on these structures
Gleize, Jérôme. "Dynamique de réseau de nanostructures à base de nitrures d'éléments III à grande bande interdite : effets de l'anisotropie de la structure wurtzite." Toulouse 3, 2001. http://www.theses.fr/2001TOU30100.
Mouton, Olivier. "Modèle de structure de bande et transport électronique en champ fort dans les semiconducteurs III-V : application aux matériaux GaAs et InP." Lille 1, 1996. https://pepite-depot.univ-lille.fr/LIBRE/Th_Num/1996/50376-1996-176.pdf.
Oszustowicz, Jean-Luc. "Mise au point de technologies adaptées à la réalisation de circuits intégrés monolithiques III-V : application à un circulateur actif en bande X." Lille 1, 1995. http://www.theses.fr/1995LIL10112.
Mo, Jiongjiong. "Etude et fabrication de MOSFET de la filière III-V." Thesis, Lille 1, 2012. http://www.theses.fr/2012LIL10026/document.
The autonomous system requires a power consumption of less than 100μW so that they can recover energy from the environment. MOSFET, being a major component of this system can achieve this low power consumption requirement by improving its performance. III-V materials are of interest to be applied to MOSFET considering its own properties such as high electron thermal mobility, high saturation velocity, and low band gap. So high-performance transistor with low power consumption can be expected by III-V MOSFETs. Fabrication technologies of In0.53Ga0.47As MOSFETs have been developed with its static and dynamic measurements. An IdMAX=180mA/mm, gmMAX=110mS/mm, fT=150GHz and fMAX=47GHz were obtained for a transistor gate length of 50nm. Different ways of improvement were studied including the gate-last process compared with gate-first, the PDA effect, and the PPP effect. The gate-last process shows less degradation of the oxide with better performance than gate-first. PDA has no prominent effect on the performance of transistor. PPA has been shown to have a passivation effect of certain defects in the oxide and interface. Alternative structures have been studied such as the structure MOSHEMT with lattice matched and pseudomorphic, showing best performances like IdMAX=300mA/mm, gmMAX=200mS/mm, fT=200GHz and fMAX=50GHz for a transistor gate length of 100nm. DC performance is far from the state of the art, while the RF performances are among the best. The perspective of this work is to improve the oxide quality by lowering the thermal budget and also to use promising structures as MOS-COMB (MOS-Thin body structure with barrier layer between the oxide and semiconductor). The MOSFET InAs with high-performance could also be expected by reducing the thermal budget during the fabrication
Lei, Huaping. "Dislocations et puits quantiques dans les nitrures semiconducteurs III-V par des méthodes de dynamique moléculaire et du premier principe." Caen, 2009. http://www.theses.fr/2009CAEN2023.
The properties of the threading dislocations and their possible interactions with the InGaN quantum wells are theoretically investigated by using a modified empirical Stillinger-Weber potential (SW) and the first principle calculations (SIESTA package). All types of pure threading dislocations: a-edge, c-screw, a-screw and c-edge in InN and AlN have been systematically studied by using SW in comparison with GaN. The new core structures of c-screw dislocations in AlN and InN are found as same in GaN with the wrong bonds located in a plane. With SIESTA, the a-edge dislocations were treated by using the quadrupolar supercells in AlN, GaN and InN. The image effect due to the periodic boundary condition has been considered by the quadrupole summation and ghost dislocation methods. The corrected core energies have indicated that 8-atom core is more energetically feasible than 4- or 5/7-atom cores. The transferability of the Stillinger-Weber potential to the large distortion system has been validated. The strain effect reduces the energetic stability of systems, and the role of c-screw dislocation on the phase separation is studied. The formation of In-rich clusters is not energetically feasible, but would be possible in the core of c-screw dislocation. The strain in InGaN/GaN heterostructures further reduces the energetic stability. Suffering from the strain, N-Ga and N-In bonds are compressed, and an abnormal behavior of N-Ga bonds takes place: N-Ga bond length is reduced as a function of indium concentration when the strain is larger than the critical value. A force balance model has been proposed to explain the abnormality of N-Ga bonds in the strained InGaN quantum wells
Gassot, Pierre. "Etude du transport vertical dans les superréseaux III-V à courte période." Université Joseph Fourier (Grenoble), 1997. http://www.theses.fr/1997GRE10016.
Barbet, Sophie. "Étude par microscopie à champ proche de matériaux III-N pour émetteurs électroniques planaires." Thesis, Lille 1, 2008. http://www.theses.fr/2008LIL10014/document.
The purpose of the thesis is to study GaN materials and devices with an atomic force microscopy in Kelvin Force Mode. The contact potential difference between a metal tip and a semiconducting material depends on the work function difference between the materials, the concentration of dopants, and the density of acceptor or donor surface states. KFM techniques provide this information at the nano- or micrometer scale. ln a first step, we have developed KFM measurement procedures on commercial microscopes in order to extract fully quantitative measurements of surface potentials. We have evidenced instrumental capacitive cross talks, for example between the electrostatic excitation and the microscope photodiode, which act as parasitic terms in the measurement of surface potentials, and need to be properly taken into account in order to get reliable measurements of contact potential differences. ln a second step we have studied the electrical properties of GaN surfaces, this material being of strong interest for power electronic applications such as electron emitters. To get a potential reference for KFM measurements, ohmic contacts on n and p-type GaN have been achieved. The KFM characterization of the layers shows surface-state induced band-bending at the oxidized GaN surface. From the values of surface potentials, we calculate the density of charge and estimate the density of surface states. We finally study the effects of surface treatments on n-GaN-MIS structures, as weIl as different types of passivation used in AlGaN/GaN HEMTs
Vermaut, Philippe. "Structure de couches de composes semi-conducteurs iii-v a large bande interdite, nitrure de gallium ou d'aluminium, epitaxiees sur carbure de silicum, par microscopie electronique en transmission." Caen, 1997. http://www.theses.fr/1997CAEN2019.
Kolhatkar, Gitanjali. "Épitaxie par faisceaux chimiques d'alliages nitrures dilués à base d'aluminium pour des applications photovoltaïques." Thèse, Université de Sherbrooke, 2014. http://hdl.handle.net/11143/5932.
Lancry, Ophélie. "Étude par microspectrométrie Raman de matériaux et de composants microélectroniques à base de semi-conducteurs III-V grand gap." Thesis, Lille 1, 2009. http://www.theses.fr/2009LIL10128/document.
GaN based semi-conductors present numerous advantages linked essentially to their large band gap as compared to traditional Si systems. In addition, it is possible to form hetero-junction III-V HEMTs (High electron Mobility Transistor) like AlGaN/GaN which makes it possible to obtain both a large density of carriers confined at the heterojunction and a high electronic mobility. At the moment these systems are the most promising for high-power hyperfrequency applications. However heating occurs during operation which results in abnormal impacts on the performance of the microelectronic components. Micro-Raman characterization of these components makes it possible to understand the influence of the behaviour of the semi-conductor materials on the performance of the HEMTs in hyperfrequency mode. Micro-Raman spectroscopy being non-destructive and possessing a submicronic spatial resolution is well adapted to such studies. The use of various UV and visible excitation wavelengths (266 and 632.8 nm) makes it possible to probe the heterostructures at different penetration depths. We present results of micro Raman studies for analysis of the heterostructure composition, the stresses between layers, the thermal boundary resistance, the crystalline quality of each layer and the doping and thermal behaviour of each layer. In addition, recent time-resolved UV micro-Raman studies have made it possible to analyse the transient thermal behaviour of AlGaN/GaN HEMTs under voltage and in the active area of the component
Besancon, Claire. "Intégration hybride de sources laser III-V sur Si par collage direct et recroissance pour les télécommunications à haut débit." Thesis, Université Grenoble Alpes, 2020. http://www.theses.fr/2020GRALT044.
This thesis focuses on the integration of III-V semiconductors on silicon. The objective is to process multi-wavelength laser sources emitting in the C-band for optical telecommunications. The process is based on the regrowth of a thick III-V structure on a thin InP layer bonded onto an oxidized silicon wafer (InP-SiO2/Si = InPoSi).In order to study the bonding process compatibility with high temperature annealing, around 600°C, required for MOVPE growth, a study of the thermal stability behavior of InPoSi substrate was carried out. The latter showed InPoSi delamination with "bubble" appearance due to the debonding of the InP layer caused by hydrogen desorption at 400°C. A study of the hydrogen lateral diffusion along the bonding interface enabled the assessment of a diffusion length of 100 µm. The development of outgassing trenches spaced 200 µm apart has permitted to obtain III-V material of high-quality regrown onto InPoSi without emergence of any void defect between the trenches.Then, the constant improvement of the preparation steps of the surfaces to be bonded enabled to obtain optimal material quality of InPoSi for regrowth at high temperature without the use of any outgassing method. The study of an active structure composed of AlGaInAs-based multi-quantum wells (MQWs) was carried out during growth on InPoSi. A thermal strain of 390 ppm was assessed at growth temperature thanks to real-time curvature measurement. The latter is due to the difference of thermal coefficients between InP and Si. Despite this thermal strain, the regrowth of a 3 µm-thick laser structure of high crystal quality was successfully obtained on InPoSi. Based on this structure, broad-area lasers were processed and their performance was compared to the ones obtained with the same component made on InP substrate as a reference. Threshold current densities as low as 0.4 kA/cm² at 20°C in pulse regime were obtained on InPoSi. The laser comparison on InPoSi and InP showed that threshold currents, laser efficiency and characteristic temperatures were similar. This result demonstrates that the thick structure grown on InPoSi does not suffer from material degradation.Finally, a new selective area growth (SAG) process was specifically developed on InPoSi. To do so, the silica from InPoSi was locally digged out by the etching of the InP layer in order to open the variable-sized dielectric surfaces for the SAG process. The thickness variation of the quantum wells obtained by SAG with the masks’ dimensions has enabled to obtain a very large photoluminescence wavelength extension, from 1490 to 1650 nm. Shallow-ridge Fabry-Pérot laser arrays were processed using SAG, and laser emissions covering a 155 nm-wide spectral range were successfully obtained. Threshold currents below 30 mA were obtained at 20°C under continuous-wave operation for 500 µm-long bars. At 70°C, threshold currents remain below 60 mA, which shows the high thermal stability of the lasers. Altogether, these results validate the III-V integration process on silicon
Sall, Mamour. "Irradiation par des ions de grande énergie de semiconducteurs III-N (AlN, GaN, InN) : création de défauts ponctuels et étendus." Phd thesis, Université de Caen, 2013. http://tel.archives-ouvertes.fr/tel-00936879.
Michelini, Fabienne. "Modélisation des structures semi-conductrices en théorie k. P multibandes : super-réseaux latéraux CdTe-CdMnTe, fils quantiques couplés GaAs-GaAlAs, effet Kerr en champ magnétique intense dans GaAs et GaMnAs." Toulouse, INSA, 2000. http://www.theses.fr/2000ISAT0040.
Acolatse, Alfred Kodjo. "Etude et réalisation et caractérisation de transducteurs à peignes interdigites sur GaAs dans la bande 100 MHz - 1 GHz en vue de la réalisation de circuits mixtes acousto-opto-électroniques." Valenciennes, 1997. https://ged.uphf.fr/nuxeo/site/esupversions/e8077b63-dbe4-4196-b8a9-d335d8335ebe.
Priest, Andrew Nicholas. "Inter-band magneto-optical studies of III-V semiconductors." Thesis, University of Oxford, 1998. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.299229.
Eichler, Ernst, and Hans Walther. "Historisches Ortsnamenbuch von Sachsen / Band III: Apparat und Register." Akademie Verlag, 2001. https://slub.qucosa.de/id/qucosa%3A15831.
Smith, Christopher J. M. "Waveguide photonic microstructures in III-V semiconductors." Thesis, University of Glasgow, 1999. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.300978.
Rodgers, D. C. "Inter-band optical spectroscopy of III-V semiconductor quantum wells." Thesis, University of Oxford, 1986. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.382680.
Wang, Qiaoyi. "Theoretical investigation of realistic III-V semiconductor intermediate band solar cells." Thesis, University of Bristol, 2016. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.723446.
Rogez, Guillaume. "Modulation des propriétés électroniques et de l'anisotropie magnétique de complexes mono et polynucléaires : influence des ligands pontants et périphériques." Phd thesis, Université Paris Sud - Paris XI, 2002. http://tel.archives-ouvertes.fr/tel-00108419.
La première partie de ce travail étudie tout d'abord l'influence des effets électroniques (donneurs et accepteurs) des ligands chélatants sur les propriétés électrochimiques de complexes mononucléaires de Fe(III). Nous avons également montré qu'il est possible de moduler les propriétés optiques de complexes polynucléaires à valence mixte FeIIBS(FeIIIHS)x (x = 4 et 6). Enfin, un modèle a été proposé pour expliquer l'origine de l'interaction ferromagnétique au sein d'un des premiers composés de la chimie de coordination, le bleu de Prusse dont les complexes FeIIBS(FeIIIHS)x sont des modèles.
La deuxième partie concerne l'étude de l'anisotropie magnétique au sein de complexes mononucléaires de Ni(II). Ce travail montre qu'il est possible d'influencer l'amplitude et la nature (axiale, planaire ou rhombique) de l'anisotropie magnétique grâce au choix des ligands chélatants.
Enfin, une modulation de l'énergie des états de spin de systèmes binucléaires en jouant sur les ligands pontants et périphériques permet de mettre en évidence le croisement de deux niveaux MS issus de deux états S différents sous l'action d'un champ magnétique extérieur. Ainsi il est possible d'accéder aux propriétés d'anisotropie dans les états excités de complexes polynucléaires possédant un état fondamental de spin S = 0.
Punya, Atchara. "Quasiparticle self-consistent GW band structures of III-N, II-IV-N2 semiconductors and band offsets." Case Western Reserve University School of Graduate Studies / OhioLINK, 2014. http://rave.ohiolink.edu/etdc/view?acc_num=case1380888317.
Sarwar, ATM Golam. "Extreme Band Engineering of III-Nitride Nanowire Heterostructures for Electronic and Photonic Application." The Ohio State University, 2016. http://rave.ohiolink.edu/etdc/view?acc_num=osu1451358029.
Shakya, Jagat B. "Micro/nano-photonic structures and devices of III-nitride wide band-gap semiconductors /." Search for this dissertation online, 2004. http://wwwlib.umi.com/cr/ksu/main.
NICHETTI, CAMILLA. "Development of avalanche photodiodes with engineered band gap based upon III-V semiconductors." Doctoral thesis, Università degli Studi di Trieste, 2021. http://hdl.handle.net/11368/2982139.
ZHOU, XIANGYU. "Physics-based multiscale modeling of III-nitride light emitters." Doctoral thesis, Politecnico di Torino, 2016. http://hdl.handle.net/11583/2639710.
SCACCABAROZZI, ANDREA. "GaAs/AlGaAs quantum dot intermediate band solar cells." Doctoral thesis, Università degli Studi di Milano-Bicocca, 2013. http://hdl.handle.net/10281/40117.
Yoodee, Kajornyod. "Crystallographic and band structure properties of some I-III-VI2 chalcopyrite compounds and alloys." Thesis, University of Ottawa (Canada), 1985. http://hdl.handle.net/10393/4670.
Naylor, Daniel Robert. "Development of Monte-Carlo simulations for III-V semiconductors employing an analytic band-structure." Thesis, University of Hull, 2012. http://hydra.hull.ac.uk/resources/hull:6247.
Weil, Thierry. "Etude theorique du transport perpendiculaire aux couches dans les semiconducteurs 3-5 modules suivant une dimension." Paris 6, 1987. http://www.theses.fr/1987PA066099.
Rigby, Pauline. "A critical appraisal of the design, fabrication and assessment of photonic structures in III-V semiconductors." Thesis, University of Oxford, 1998. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.302497.
Hajlaoui, Chahira. "Etude des propriétés structurales et électroniques des nanofil semiconducteurs III-V." Thesis, Rennes, INSA, 2014. http://www.theses.fr/2014ISAR0012/document.
Semiconductor nanowires are attracting much attention both for their original properties and their potential applications in opto- and nanoelectronics. The physics of nanowires and in particular materials at the base is poorly understood and difficult to characterize. In this context, the numerical simulation can provide quantitative answers to the problems posed by these objects and help to explore their potential. In particular, their crystallization is in a wurtzite (WZ) hexagonal phase but with stacking faults that result in insertions of cubic sequences. The zinc blende structure has been widely studied; the various structural, electronic and optical properties of semiconductor materials adopting this structure are well illustrated and discussed in the literature. On the other side, these properties are poorly understood for WZ. Study of WZ III-V materials and related heterostructures is the subject of this work. In particular, I have simulated the structural and electronic properties of relaxed InAs and InP and under strain condition. ab initio modeling or first principle may explore structural, electronic and dynamics of matter without any experimental prior knowledge. Here, DFT calculations are performed to model the structural and electronic properties of WZ InAs and InP. The error in the evaluation of conduction energy states has been circumvented with the use of GW approximation and hybrid functionals. Finally, I have studied band offset alignment and polarizations effects in InAs/InP WZ system
Miller, Jeffrey Lee II. "An evaluation of quality in compositions for school band (Grades III and IV)| A regional study." Thesis, The Florida State University, 2013. http://pqdtopen.proquest.com/#viewpdf?dispub=3596545.
The current study was designed to examine the question of quality as it relates to school band music composed for the performance levels of Grade III and IV. This was accomplished across two concurrent studies. The purpose of the primary study was to: (a) compare state prescribed lists for common compositions, (b) to examine the opinions of expert middle school band directors regarding the quality of those common compositions (grades III & IV), and (c) to identify a select pool of meritorious compositions. The purpose of the secondary study was to: (a) examine the opinions of prominent college band directors regarding the quality of the same list of literature evaluated by middle school band directors, and (b) to identify a select pool of meritorious compositions. The overall purpose of the combined surveys was to establish a select list of compositions known to both expert middle school and college band directors that are recognized for their meritorious quality and may be of use to educators of all levels.
Participants (N = 64) were expert middle school ( n = 32) and college (n = 32) band directors who completed an online survey consisting of three sections: (a) Demographic Data, (b) Evaluation of Compositions, and (c) Suggested Compositions for Further Study. Analysis of responses found that all directors rated each of the 189 compositions and that a strong level of agreement of the rated level of quality was present within subjects. However, when compared, there was a statistically significant difference showing a wider range of quality ratings assigned by college band directors. Further analysis revealed a list of 32 compositions which were known by five or more evaluators and possessed a minimum of 79 percent of the total points each composition could receive. As before, analysis of responses found a strong level of agreement of the rated level of quality within subjects and a statistically significant difference in the ratings assigned by each group. This final list establishes a collection of wind band compositions which are among the finest grade III and IV compositions known by the expert panel of evaluators. Works on this list represent many, if not all, compositions which should be familiar to all conductors, instrumental music educators, and their students.
Compositions suggested for further study (N = 72) were self-identified by researchers as grade III or IV compositions that were not included as part of the present study. No attempt to state the quality of these works is made by the researcher and therefore should be investigated in future studies. Implications, additional findings, and suggestions for future research are discussed.
Loth, Sebastian. "Atomic scale images of acceptors in III-V semiconductors band bending, tunneling paths and wave functions /." Göttingen : Univ.-Verl. Göttingen, 2008. http://d-nb.info/989995232/34.
Altegoer, Florian [Verfasser], and Gert [Akademischer Betreuer] Bange. "Structural and functional studies on the homeostasis and type-III-secretion of flagellin / Florian Altegoer ; Betreuer: Gert Bange." Marburg : Philipps-Universität Marburg, 2017. http://d-nb.info/1144625998/34.
Mohammad, Rezek Mahmoud Salim. "The Electronic Band Structure Of Iii (in, Al, Ga)-v (n, As, Sb) Compounds And Ternary Alloys." Phd thesis, METU, 2005. http://etd.lib.metu.edu.tr/upload/12606292/index.pdf.
here, the conduction band minima of both AlN and AlAs are located at X symmetry point, while that of AlSb is at a position lying along Gamma- X direction. An important part of this work consists of ETB calculations which have been parameterized for sp3d2 basis and nearest neighbor interactions to study the band gap bowing of III(In
Al)- V(N
As
Sb) ternary alloys. This ETB model provides a satisfactory electronic properties of alloys within reasonable calculation time compared to the calculations of DFT. Since the present ETB energy parameters reproduce successfully the band structures of the compounds at ¡
and X symme- try points, they are considered reliable for the band gap bowing calculations of the ternary alloys. In the present work, the band gap engineering of InNxAs1¡
x, InNxSb1¡
x, InAsxSb1¡
x, Al1¡
xInxN, Al1¡
xInxSb and Al1¡
xInxAs alloys has been studied for total range of constituents (0 <
x <
1). The downward band gap bowing seems the largest in InNxAs1¡
x alloys among the alloys considered in this work. A metallic character of InNxAs1¡
x, InNxSb1¡
x and InAsxSb1¡
x has been ob- tained in the present calculations for certain concentration range of constituents (N
As) as predicted in the literature. Even for a small amount of contents (x), a decrease of the electronic e®
ective mass around ¡
symmetry point appears for InNxAs1-x, InNxSb1-x and InAsxSb1-x alloys manifesting itself by an increase of the band curvature. The calculated cross over from indirect to direct band gap of ternary Al alloys has been found to be consistent with the measurements. As a last summary, the determinations of the band gaps of alloys as a function of contents, the concentration range of con- stituents leading to metallic character of the alloys, the change of the electronic effective mass around the Brillioun zone center (Gamma) as a function of alloy contents, the cross over from indirect to direct band gap of the alloys which are direct on one end, indirect on the other end, are main achievements in this work, indispensable for the development of mate- rials leading to new modern circuit components.
Jaffal, Ali. "Single photon sources emitting in the telecom band based on III-V nanowires monolithically grown on silicon." Thesis, Lyon, 2020. http://www.theses.fr/2020LYSEI019.
A telecom band single photon source (SPS) monolithically grown on silicon (Si) substrate is the Holy Grail to realize CMOS compatible devices for optical-based information technologies. To reach this goal, we propose the monolithic growth of InAs/InP quantum dot-nanowires (QD-NWs) on silicon substrates by molecular beam epitaxy (MBE) using the vapour-liquid-solid (VLS) method. In the beginning, we have focused our efforts on optimizing the growth conditions aiming at achieving ultra-low NWs density without any pre-growth or post-growth efforts allowing us to optically excite a single QD-NW on the as-grown sample and to preserve the monolithic growth on silicon. Subsequently, we have turned our attention on enhancing the InAs QD light extraction from the InP NW waveguide towards the free space to achieve a bright source with a Gaussian far-field (FF) emission profile to efficiently couple the single photons to a single-mode optical fiber. This was done by controlling the NW geometry to obtain needlelike-tapered NWs with a very small taper angle and a NW diameter tailored to support a single mode waveguide. Such a geometry was successfully produced using a temperature-induced balance over axial and radial growths during the gold-catalyzed growth of the NWs. Optical measurements have confirmed the single photon nature of the emitted photons with g2(0) = 0.05 and a Gaussian FF emission profile with an emission angle θ = 30°. For optimal device performances, we have then tackled a crucial issue in such NW geometry represented by the unknown polarization state of the emitted photons. To solve this issue, one solution is to embed a single QD in a NW with an asymmetrical cross-section optimized to inhibit one polarization state and to improve the emission efficiency of the other one. An original growth strategy was proposed permitting us to obtain highly linearly polarized photons along the elongated axis of the asymmetrical NWs. Finally, the encapsulation of the QD-NWs within amorphous silicon (a-Si) waveguides have opened the path to produce fully integrated SPSs devices on Si in the near future
Loth, Sebastian [Verfasser]. "Atomic scale images of acceptors in III-V semiconductors : band bending, tunneling paths and wave functions / Sebastian Loth." Göttingen : Univ.-Verl. Göttingen, 2008. http://d-nb.info/989995232/34.