Дисертації з теми "Back Channel"
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Ting, Chui Huon Tina. "The behaviour of axially loaded cold-formed steel back-to-back C-channel built-up columns." Thesis, Curtin University, 2013. http://hdl.handle.net/20.500.11937/1779.
Повний текст джерелаGlang, Nele. "Back Channel Diplomacy and the Sino-German relationship, 1939-1945." Thesis, University of Sheffield, 2014. http://etheses.whiterose.ac.uk/6957/.
Повний текст джерелаMatsubara, Shigeki, Tomohiro Ohno, and Yuki Kamiya. "Coherent Back-Channel Feedback Tagging of In-Car Spoken Dialogue Corpus." ACL(Association for computational linguistics), 2010. http://aclweb.org/anthology/.
Повний текст джерела王妍 and Yan Yeon Wang. "Historical montage: renovation of warehouses in back channel of Pearl River." Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2011. http://hub.hku.hk/bib/B47544296.
Повний текст джерелаKretschmer, Mathias Raimund Otto. "Integration of unidirectional technologies into wireless back-haul architecture." Thesis, Brunel University, 2012. http://bura.brunel.ac.uk/handle/2438/6574.
Повний текст джерелаPonzo, Lucia. "Il back channel Kissinger/Dobrynin (1969-1972): prove di normalizzazione tra le due superpotenze." Doctoral thesis, Luiss Guido Carli, 2020. http://hdl.handle.net/11385/204278.
Повний текст джерелаGyimesi-Varga, Petra Julia <1994>. "Back-channel negotiations: a comparative analysis of the Oslo- and the Northern Ireland Peace Processes." Master's Degree Thesis, Università Ca' Foscari Venezia, 2019. http://hdl.handle.net/10579/15472.
Повний текст джерелаRadaciova, Romana, and Alexandra Klacanova. "To try on or send back? Shopping in post-pandemic times : Exploratory study of pandemic effects on consumer behaviour." Thesis, Umeå universitet, Företagsekonomi, 2021. http://urn.kb.se/resolve?urn=urn:nbn:se:umu:diva-184366.
Повний текст джерелаZadnik, Andrew Karl. "Wildlife use and habitat quality of back channel areas associated with islands on the Ohio River, West Virginia." Morgantown, W. Va. : [West Virginia University Libraries], 2003. http://etd.wvu.edu/templates/showETD.cfm?recnum=2898.
Повний текст джерелаTitle from document title page. Document formatted into pages; contains v, 131 p. : col. ill., col. maps. Includes abstract. Includes bibliographical references.
Arabi, Mohamed. "Improving fairness and utilisation in ad hoc networks." Thesis, University of Plymouth, 2012. http://hdl.handle.net/10026.1/1167.
Повний текст джерелаWilliamson, Graham. "Instructor-trainee conversation in Adult Training Centre for people with learning disabilities : an analysis of the function and distribution of back channel tokens and personal names." Thesis, University of Newcastle Upon Tyne, 1995. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.261240.
Повний текст джерелаDavies, Llewellyn Willis. "‘LOOK’ AND LOOK BACK: Using an auto/biographical lens to study the Australian documentary film industry, 1970 - 2010." Phd thesis, Canberra, ACT : The Australian National University, 2018. http://hdl.handle.net/1885/154339.
Повний текст джерелаSoto, Paul Eduardo. "Essays on the bank lending channel." Doctoral thesis, Universitat Pompeu Fabra, 2018. http://hdl.handle.net/10803/659085.
Повний текст джерелаEsta tesis estudia los cambios en la oferta de crédito de los bancos cuando se enfrentan a incertidumbre, supervisión regulatoria y políticas macroprudenciales. El primer capítulo propone un nuevo índice para detectar la incertidumbre idiosincrática de los bancos a nivel trimestral. Para desarrollar la nueva medida, utilizo técnicas de aprendizaje de máquinas y procesamiento del lenguaje natural sobre los discursos trimestrales hechos por la gerencia de cada banco. Encuentro que una mayor incertidumbre está asociada con un menor préstamo el próximo trimestre y una mayor liquidez, lo que sugiere un manejo activo de la incertidumbre. El segundo capítulo explora cómo los bancos responden a la supervisión maquillando sus balances. En preparación para la revisión de calidad de activos (AQR) de 2014 en Europa, los bancos revisados redujeron su participación en bonos y préstamos riesgosos. Después del AQR, los bancos volvieron a adquirir bonos más riesgosos en sus balances, pero no créditos más arriesgados. En el tercer capítulo, estudio cómo la introducción de controles de capital en Colombia afectó el crédito doméstico. Los resultados apuntan a complementariedades entre la oferta de crédito domestico y externo.
Barney, Keiko Moriyama. "Identifying and Understanding the Difference Between Japanese and English when Giving Walking Directions." BYU ScholarsArchive, 2015. https://scholarsarchive.byu.edu/etd/4427.
Повний текст джерелаBajec, Luka. "Three essays on the bank lending channel /." kostenfrei, 2008. http://www.opus-bayern.de/uni-passau/volltexte/2009/1282/.
Повний текст джерелаGolodniuk, Inna. "Evidence on the bank lending channel in Ukraine /." Burnaby B.C. : Simon Fraser University, 2005. http://ir.lib.sfu.ca/handle/1892/2022.
Повний текст джерелаBedikanli, Mervan. "Investigating the existence of a bank lending channel in Sweden." Thesis, Umeå universitet, Nationalekonomi, 2021. http://urn.kb.se/resolve?urn=urn:nbn:se:umu:diva-182022.
Повний текст джерелаWong, Yu-lok. "Differential changes in lumbar muscle activity and paraspinal stiffness during asymmetrical leg movement." Click to view the E-thesis via HKUTO, 2009. http://sunzi.lib.hku.hk/hkuto/record/B43572376.
Повний текст джерелаMalauene, Bernardino Sergio. "Environmental influences on banana shrimps of the Sofala Bank, Mozambique Channel." Doctoral thesis, University of Cape Town, 2015. http://hdl.handle.net/11427/15609.
Повний текст джерелаKhosravi, Taha. "The bank lending channel : an empirical assessment of measures to stimulate bank lending in the European Union." Thesis, University of Sussex, 2018. http://sro.sussex.ac.uk/id/eprint/75171/.
Повний текст джерелаFabiana, Sabatini. "Essays on Bank Lending." Doctoral thesis, Luiss Guido Carli, 2021. http://hdl.handle.net/11385/213735.
Повний текст джерелаDomes, Joachim. "Chancen im Generationenbanking /." Frankfurt am Main : Frankfurt School-Verl, 2009. http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&doc_number=018969210&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA.
Повний текст джерелаMatsuura, Troy. "Stream-bank protection in narrow channel bends using 'barbs': A laboratory study." Thesis, University of Ottawa (Canada), 2004. http://hdl.handle.net/10393/26711.
Повний текст джерелаStruckell, Beth Maney. "Peeling Back the Layers of Ambidexterity in Multi-Business Firms." Thesis, University of North Texas, 2018. https://digital.library.unt.edu/ark:/67531/metadc1404628/.
Повний текст джерелаAmarasinghe, Ivan. "Effects of bank vegetation in waterways, with special reference to bank erosion, shear strength, root density and channel hydraulics." Thesis, Open University, 1991. http://oro.open.ac.uk/57341/.
Повний текст джерелаEmilsson, Adrian. "Artificial Reverb vs. Real Recorded Reverb in the Back Channels in a 5.1 Surround Setup." Thesis, Luleå tekniska universitet, Medier ljudteknik och upplevelseproduktion och teater, 2018. http://urn.kb.se/resolve?urn=urn:nbn:se:ltu:diva-69369.
Повний текст джерелаSeim, Knut Sponheim. "Mixing processes in dense overflows with emphasis on the Faroe Bank Channel overflow." Doctoral thesis, Norges teknisk-naturvitenskapelige universitet, Institutt for marin teknikk, 2011. http://urn.kb.se/resolve?urn=urn:nbn:no:ntnu:diva-12328.
Повний текст джерелаWong, Yu-lok, and 黃宇樂. "Differential changes in lumbar muscle activity and paraspinal stiffness during asymmetrical leg movement." Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2009. http://hub.hku.hk/bib/B43572376.
Повний текст джерелаHall, Ashley. "Looking Back: An Examination of Hindsight Bias in Change Detection Ability." Marietta College / OhioLINK, 2008. http://rave.ohiolink.edu/etdc/view?acc_num=marietta1212840291.
Повний текст джерелаLi, Yuan Olivero Maria Jeon Bang Nam. "Market structure in banking and the bank lending channel : evidence from the bank-level data in Asian and Latin American countries /." Philadelphia, Pa. : Drexel University, 2009. http://hdl.handle.net/1860/3137.
Повний текст джерелаNyiranshuti, Claudette. "Monetary policy transmission mechanism in Rwanda: review of the bank lending channel post 1994." Thesis, Nelson Mandela Metropolitan University, 2014. http://hdl.handle.net/10948/3923.
Повний текст джерелаBarriga, Carlos. "Investigating the bank lending channel for monetary policy in the U.S. from 1985-2004." Honors in the Major Thesis, University of Central Florida, 2005. http://digital.library.ucf.edu/cdm/ref/collection/ETH/id/737.
Повний текст джерелаBachelors
Business Administration
Economics
Chen, Changsheng. "Variability of currents in Great South Channel and over Georges Bank : observation and modeling." Thesis, Massachusetts Institute of Technology, 1992. http://hdl.handle.net/1721.1/51500.
Повний текст джерелаTitle as it appears in the M.I.T. Graduate List, June 1992: Variability of currents in Great South Channel and Georges Bank, observation and modeling.
Includes bibliographical references (leaves 260-270).
by Changsheng Chen.
Ph.D.
Janes, Victoria Jennifer Julie. "An analysis of channel bank erosion and development of a catchment sediment budget model." Thesis, University of Exeter, 2013. http://hdl.handle.net/10871/14870.
Повний текст джерелаGorgon, Edward James. "Improving back pain care in the hospital setting." Thesis, The University of Sydney, 2022. https://hdl.handle.net/2123/29414.
Повний текст джерелаMarkidou, Aikaterini. "The transmission mechanism of monetary policy and the bank lending channel : the case of Greece." Thesis, University of Sheffield, 2010. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.554220.
Повний текст джерелаPang, Wen-Hau, and 龐文豪. "Back-channel effects on ambipolar organic thin-film transistors." Thesis, 2014. http://ndltd.ncl.edu.tw/handle/euhxxm.
Повний текст джерела國立交通大學
光電工程研究所
103
In this thesis, we discuss the back-channel effects on the characteristics of ambipolar organic thin-film transistors(OTFTs), we fabricated bottom-contact OTFTs with various materials as the back-channel layers, including PMMA, PVCN, PVP, HMDS and Pristine Glass. Variations in the characteristics, including carrier mobility, on-off ratio and the shift of threshold voltage, appeared in the devices with different back-channel layer materials. In order to confirm whether this phenomenon came from the electron trapping effect produced by the hydroxyl groups in back-channels, we added different amount of cross-linking agents in the PVP dielectrics, and compared the characteristics of OTFT devices with different thickness of the active layers. As a result, we found that not only the hydroxyl groups in dielectric layers affected the characteristics of OTFTs, those in the back-channel layers also led to similar phenomenon. On the other hand, we used the ambipolar OTFTs in this work to construct CMOS-like inverters, and achieved a maximum inverter Gain of -37.7, and noise margin of 〖"NM" 〗_"L" "=5.1 V" 、〖"NM" 〗_"H" "=10.3 V" .
Liao, Chia-Hsin, and 廖家欣. "Fabrication of Back-Channel-Etched Bottom-Gate Amorphous-InGaZnO Thin Film Transistors." Thesis, 2010. http://ndltd.ncl.edu.tw/handle/38739772329596413275.
Повний текст джерела國立臺灣大學
光電工程學研究所
98
The back-channel-etched (BCE)-type bottom-gate thin film transistor (TFT) structure is the most desired one for the rapidly growing oxide TFT technology due to merits such as simplicity, low cost, ease of device scaling, and compatibility with the existed main-stream a-Si TFT fabrication. Yet until now, the high-etching-selectivity S/D wet etching processes that is required for implementing the BCE-type oxide TFT for large areas has not been successfully demonstrated due to the susceptibility of the amorphous oxides to corrosion by various acids and bases. In this thesis, we have developed such high-selectivity (>100) wet etching processes for widely used TFT electrodes Mo and even Cu, and successfully demonstrated its use in implementing decent BCE bottom-gate amorphous InGaZnO (a-IGZO) TFTs. Such development shall facilitate advances of the oxide TFT technology into the large-area applications and production. In this thesis, we had also studied the effects of the post-annealing process, which is commonly used in TFT technologies, on using BCE bottom-gate a-IGZO TFTs using Mo S/D electrodes. It was found that as the high-temperature (>240 oC) post-annealing was applied to the TFTs developed in this thesis, the current modulation ability was degraded, and the series resistance increased. Thus we adopted a different annealing process: annealing right after the semiconductor was deposited. Experiment results reveal that TFTs using this annealing process can endure an annealing temperature up to 300 oC and still possess good current modulation ability. Compared to annealing after TFT fabrication at the same annealing temperature (200 oC), this annealing process gains smaller series resistance. Besides, this process yields higher on/off current ratio for TFTs (up to 2.6×109 by the 250 oC annealing process). Finally we applied the wet-etching process and the annealing process to the fabrication of a-IGZO TFTs with Mo/Cu/Mo tri-layer S/D electrodes. These devices show decent TFT performances and high on/off current ratio up to 4.1×109 (by the 250 oC annealing process).
Li, Wen-Ching, and 李文慶. "Improved Back Propagation Neural Network Scheme for Channel Estimation in OFDM Systems." Thesis, 2014. http://ndltd.ncl.edu.tw/handle/tzjs26.
Повний текст джерела國立虎尾科技大學
電機工程研究所
102
Orthogonal frequency division multiplexing (OFDM) is a multi-carrier modulation technique; it is competent to high-speed data transmission capability and good bandwidth efficiency, better stability for multi-path fading and delay, and has the ability to be able to resist the frequency selective channel, so that widely gains the attention and adoption. In mobile communication systems, the multi-path channel causes signal distortion and attenuation, and the relative motion between transmitter and receiver causes the Doppler effect that produces signal carrier offset. Therefore, knowledge of the channel characteristics is very important. To remove these effects from received signal, in this thesis, we use back-propagation neural network (BPNN) to estimate channel and compensate carrier offset. Several researchers use the BPNN architecture and set its learning rate parameter arbitrarily, so its performance is not very good. Since not exactly using the structure of BPNN, it would seriously affect system performance. This thesis proposes a method to improve the performance of BPNN for channel estimation in OFDM systems. The study on OFDM systems is in Rayleigh fading channel environments and we obtain the bit error rate performance of the proposed BPNN. The configuration and the number of the pilots and the selection of the learning rate are discussed in the thesis. Finally, we compare the performance of the proposed improved BPNN with the least squares (LS) and minimum mean square error (MMSE) algorithms. The purpose of this thesis is to improve the performance of optimization BPNN to approach the performance MMSE algorithm.
Wu, Yi-Kang, and 吳宜剛. "Study of Hybrid P/N Channel with Back-Gate Junctionless Field-Effect Transistor." Thesis, 2015. http://ndltd.ncl.edu.tw/handle/cx868g.
Повний текст джерела國立交通大學
電子工程學系 電子研究所
104
In this work, we introduce a double-gated junctionless (JL) field-effect transistor (FET) which contains a hybrid P/N channel proposed by our team previously. The hybrid P/N channel is composed of a p+ channel stacked on an n+ Si layer. The naturally formed depletion layer between the two layers may reduce the effective thickness of the P-type channel. This scheme may not only relieve the constraint imposing on the channel thickness of a JL device, but also reducing the process complexity. Furthermore, the device performance may benefit from the negative bias applied to the back-gate. The above scheme was demonstrated, for the first time, with a polycrystalline silicon-based technology. The fabricated devices show excellent electrical characteristics in terms of steep subthreshold swing (SS = 69 mV/dec), negligible drain-induced barrier lowering (DIBL = 6mV/V), high On-Off current ratio (Ion/Ioff > 108), good threshold voltage (Vth) modulation capability (= 0.08) and reduced low-frequency noise (LFN). Ion increases while Ioff decreases simultaneously as a more negative Vbg is applied. The enhancement of Ion/Ioff ratio is maintained as the temperature is increased from 25℃ to 125℃. The feature makes the scheme potential for low power, System-on-Chip (SoC) and System-on-Panel (SoP) applications. This thesis also demonstrated a JL device with vertically stacked multi-hybrid P/N channels. The fabrication process flow is discussed in detail and the basic electrical characteristics are presented. Specifically, the Ion/Ioff of multi-hybrid P/N channel JL-FET is more than 109. The good device characteristics along with the simple fabrication enable this approach promising for future 3D stacked integrated circuits applications.
LIN, KUAN LIN, and 林冠霖. "Chinese Learners’ Acquisition of the Focus Back-Channel ― Focus on Larp at SCU ―." Thesis, 2014. http://ndltd.ncl.edu.tw/handle/98823099357585632165.
Повний текст джерела東吳大學
日本語文學系
102
“Back-channel” this sound expression seems nothing, but plays a very important role in utterance (speech or conversation). Speakers use back-channel to have the same message, in one topic and to smooth sentence. By observing a conversation, speakers use back-channel frequently. This thesis is observing Japanses language learners’ back-channel usage at different steps from LARP at SCU (Language Acquisition Research Project at Soochow University). The purpose of this thesis is to verify Japanses language learners’ back-channel usage preference, and to compare each learners’ back-channel usage to native Japanese speakers’. This thesis is divided into 5 chapters. Chapter one introduces the motivation, the purpose and the study method of this research. Chapter two shows antecedent researches of back-channel from Japanese linguistic study and Japanese education study. Those help author to redefine the definition of back-channel and to build up verification standers. Author addresses problems from antecedent researches. Chapter three explains study method including how to distinguish back-channel in utterance, survey subjects and collected data. Chapter four analyzes and summarizes the survey date. It tells back-channel usage preference and intendancy of six Japanese language learners. Furthermore, author combines each individual’s survey data into comprehensive study. Chapter five concludes back-channel usage intendancy of Japanese language learners, and inspects how recent textbook mention about back-channel and arrange the order of back-channel from content. Finally, author proposes a suggestion to Japanese education study and a direction for future study.
Tseng, Chia-Ming, and 曾嘉明. "Neural-Based Packet Equalization for Indoor Radio Channel by Fast Back Propagation Algorithm." Thesis, 1993. http://ndltd.ncl.edu.tw/handle/39356562410865805443.
Повний текст джерела國立交通大學
傳播科技研究所
81
In this thesis, a new decision feedback equalizer (DFE) based on neural network is proposed to overcome the multipath fading problem of the indoor radio channel. And the fast packet bipolar-state back propagation (fast PBSBP) algorithm is proposed for the training of the neural-based DFE. This algorithm is featured as: (1) high convergence rate, and (2) capable of tracking the time variations of the channel charateristics. Moreover, we use 2-D real-vector representation to process the complex-valued signals, thus no complex operation is needed and the problem of singularity can be avoided. For this reason, the complexity of the DFE architecture and the complexity of computation can be both reduced. From the computer simulation results, it can be shown that the new equalizer with the fast PBSBP algorithm can achieve lower error and lower bit error rate than the traditional DFE and training algorithm.
Cheng, Yung-Pei, and 鄭永沛. "A GA-Based Back Propagation Neural Network for Channel Estimation in OFDM Systems." Thesis, 2012. http://ndltd.ncl.edu.tw/handle/8z7yde.
Повний текст джерела國立虎尾科技大學
電機工程研究所
100
Orthogonal frequency division multiplexing (OFDM) is a multicarrier modulation technique; it is competent to high-speed data transmission capability and good bandwidth efficiency, better stability for multipath fading and delay, and resistance frequency selective channel. That gradually gains the attention and adoption. In Wireless communication system, due to the environmental impact generated the multipath effect caucused signals distortion and attenuation in transmitted process, and due to relative motion between transmitter and receiver caused the Doppler effect that make the signal carrier offset, Therefore, knowledge of the channel characteristics are very important. To remove the effect from received signal, the receiver needs to have knowledge of channel impulse response (CIR) by channel estimation, and then compensates signals. In this paper, we use back propagation neural network (BPNN) to estimate channel and compensate signals. The reason of use neural network to do channel estimation and compensation is that the neural network does not require definition of the problem of complex mathematical models that deal with complex problem and uncertain environment by learning. The traditional back propagation neural network used gradient descent method to find the optimal solution, and then updated the weight values. Gradient descent method usually converges to a local optimum, which may not find the global optimum. Therefore, we used the genetic algorithm (GA) to replace the gradient descent method to search for the optimal solution in this paper. Finally, we compare bit error rate (BER) and mean square error (MSE) of our proposed GA-based back propagation neural network with that of traditional back propagation neural network, least square (LS) algorithm and minimum mean square error (MMSE) algorithm in existing OFDM channel environments.
Wei-Cheng, Chang, and 張維晟. "Study on Back-Channel Etched of In-W-Zn-O Thin Film Transistors Technology." Thesis, 2016. http://ndltd.ncl.edu.tw/handle/87482247035109778479.
Повний текст джерелаLin, Yueh-Shien, and 林岳賢. "Study of back-pressure on microstructure of AZ80 magnesium alloy in equal channel angular extrusion." Thesis, 2009. http://ndltd.ncl.edu.tw/handle/56063984408097369964.
Повний текст джерела國立交通大學
機械工程系所
97
Severe Plastic Deformation (SPD) is widely used to improve the mechanical properties of magnesium. The equal channel angular extrusion (ECAE) is the most simple and convenient technique in SPD. By using ECAE, we obtain a product which has the same cross section with original billet after extrusion .In addition, the force required in extrusion during ECAE process is usually not large, and we can control the microstructure of the billet by changing the die parameters. Our experiments show that low temperature extrusion can achieve in grain refinement, but the lowest extrusion temperature is limited by materials and dies. Imposing a back-pressure is useful for increasing the strain of billet to avoid the cracking on the billet surface by tensile stress. In order words, imposing a back-pressure is beneficial to compromise the extrusion temperature. In this study, the effect on the microstructure of magnesium alloy AZ80 of imposing the back-pressure was investigated. As a result, we found that imposing the back-pressure is helpful in extending the lowest extrusion temperature. At the same temperature, it makes the grain size larger with increasing back-pressure.
Cheng-Yi, Chiang. "Study on Photo-Sensitive Low Dielectric Materials Passivation on Back-Channel-Etched Amorphous Silicon Thin Film Transistors." 2006. http://www.cetd.com.tw/ec/thesisdetail.aspx?etdun=U0016-1303200709305521.
Повний текст джерелаChiang, Cheng-Yi, and 江政禕. "Study on Photo-Sensitive Low Dielectric Materials Passivation on Back-Channel-Etched Amorphous Silicon Thin Film Transistors." Thesis, 2007. http://ndltd.ncl.edu.tw/handle/49808319007394472571.
Повний текст джерела國立清華大學
電子工程研究所
94
Abstract In this thesis, we investigated the application of photo-sensitive low dielectric passivation materials for thin-film-transistor (TFT) technology. photo-sensitive low dielectric passivation materials has the properties of the high transmittance (>90% at 300~800 nm), low photo leakage current and good planarization for TFT passivation layer. In addition, it can effectively increase the aperture ratio of display matrix and reduce resistance-capacitance delay (RC delay). More importantly, the photosensitivity of material property makes to simplify process and reduce fabrication steps. Therefore, the application of the photo-sensitive low dielectric passivation materials on TFT device has become one of the most important issue for flat panel display. In this study we have investigated two of the promising candidates of photo-sensitive low dielectric passivation materials for TFT array technology application. In TFT process, the effects of passivation layers on device electrical characteristics are the most important issue. In this study, the effects of two kinds photo-sensitive low dielectric passivation materials and conventional silicon nitride passivation layer on device electrical characteristics are discussed. In conclusion, we have found that the leakage of devices with photo-sensitive low dielectric passivation is little changed by illumination. Otherwise, device performance exhibits also well in reliability. This indicates that photo-sensitive low dielectric passivation materials are the most possible candidate to replace the conventional SiNx passivation layer on TFT device in the future.
Ya-HanChiang and 蔣亞翰. "Design and Implementation of Multicast Wi-Fi Display Model with User Input Back Channel on Embedded System." Thesis, 2016. http://ndltd.ncl.edu.tw/handle/10904852280883312418.
Повний текст джерела國立成功大學
工程科學系
104
As both Smart Handheld Devices (SHDs) and wireless display technologies have developed, many SHDs now have Wi-Fi Display (WFD) functionality built-in, and other embedded devices which support this functionality have arisen.Using the aforementioned devices to build a presentation system in a government agency or enterprise is quite convenient and user-friendly; however, they are not completely suitable in the classroom of a traditional school because of implementation costs and rising interactive demands. Due to the above considerations, we propose a low-cost Multicast Wi-Fi Display model with a User Input Back Channel (UIBC), and implement a prototype which can be applied to the teaching environment of the classroom. To build the system prototype, first of all the functionality of the WFD Sink needs to be accomplished. After that, the WFD Sink receives the streaming media from the WFD Source and multicasts it to other clients. Lastly, a User Input Back Channel (UIBC) is designed in this system prototype so that a user can remotely control an Android smart device. In order to implement the system prototype described above, we choose a multimedia processing platform as the WFD Sink, and integrate other devices and related modules, to accomplish multicast communication and UIBC. To prove the functionality of the system prototype works well, we select an Android Smartphone as the WFD Source, which screencasts three applications in sequence, and then the WFD Sink and other clients mostly display the streaming media simultaneously in real-time.
Liou, Guan-Lin, and 劉冠麟. "Investigation of Improved Electrical Characterizations of P-Type Tin-Oxide Thin Film Transistors Using Back Channel Modification." Thesis, 2017. http://ndltd.ncl.edu.tw/handle/wcydtx.
Повний текст джерела國立臺灣師範大學
機電工程學系
105
This study first explored the effects of channel annealing temperature and the oxygen flow rate at the channel layer on the P-type SnO-TFT. Channel annealing at 150°C still exhibits metal properties, while annealing at 200°C shows favorable semiconductor characteristics for transistor rectification. In addition, the larger oxygen flow rate when depositing the tin oxide channel layer contributes to the growth of the tin oxide grains, the carrier mobility and the driving current of the devices can be improved, but also because the crystal grains increase the leakage current. It is important to choose the right oxygen flow. Followed by deposition of 6 nm, 10 nm, 15 nm tin oxide as the channel layer, the corresponding mobility of their devices were 3.58cm2V-1S-1, 6.3cm2V-1S-1, 3.46cm2V-1S-1, and the corresponding Ion/Ioff current ratio is 1.58 x 103, 9.55 x 10, 6.21 x 10. From this phenomenon we can understand that the channel layer thicker the channel layer of tin vacancy is more, resulting in more holes, and because the channel layer thickness is thick, the gate control capacity decreased, not enough to discharge the hole completely closed devices. Then, the effect of the tin oxide channel layer on the tin oxide thin film transistor was modified by the low temperature fluorine plasma. As a result, it was confirmed that the modification of the channel layer with the fluorine plasma could improve the leakage current of the tin oxide thin film transistor. Finally, the thickness of the tin oxide channel layer was reduced and the channel layer was annealed at an annealing temperature of 250oC, 300oC and 350oC to obtain an n-type SnO-TFTs. In this study, the tin oxide thin film transistor with the channel layer thickness of 6 nm as the boundary, when the thickness of more than 6 nm devices for the p-type SnO-TFTs; when the thickness of less than 6 nm devices for the n-type SnO-TFTs.
Lin, Yu-Chen, and 林育辰. "Investigation of Electrical Characteristics on 100-nm InGaAs Channel FinFET Using InAlAs Back Barrier and Al2O3 Gate Dielectric." Thesis, 2016. http://ndltd.ncl.edu.tw/handle/kcu364.
Повний текст джерела國立交通大學
光電系統研究所
104
A bulk InGaAs-based FinFET device compatible with Si-technology has been developed in this thesis. Here also applied several key techniques, including fabrication of Al2O3/InxGa1-xAs MOS, gold-free S/D contact, nano-scaled channel of InxGa1-xAs with 3D FinFET structure and the design simulation modeling of III-V 3D FinFET. All of the experimental results show these technologies could be utilized for low power consumption 3D transistor with dimension of less than 7nm. First, we studied the characteristics of InGaAs and Al2O3 by fabricating MOS capacitor. The capacitance equivalent thickness (CET) was about 6.91 nm by C-V measurement of Al2O3/InGaAs MOS capacitor. The Dit estimated by the conductance method was about 8×1011 /eVcm2. The electron mobility of InGaAs was about 1630 cm²/V-s by Hall measurement. Finally, InGaAs-based FinFET on InP substrate with back barrier layer was successfully fabricated. The dimension of the device has channel length of 40nm and gate length of 200nm, a wide band gap material of InAlAs as a barrier layer embedded in the back side of the channel for reducing current leakage of junction. The driving voltage of 1.3V and drain voltage of 0.5V, a high driving current of 74.5μA/μm, the subthreshold swing (SS) of about 334 mV/dec, the ION/IOFF ratio of about 102, and specific contact resistivity (ρc) of about 6.7×〖10〗^(-6) Ω-cm2 were achieved.