Статті в журналах з теми "Axial heterostructure nanowires"
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Лещенко, Е. Д., та В. Г. Дубровский. "Моделирование профиля состава осевой гетероструктуры InSb/GaInSb/InSb в нитевидных нанокристаллах". Письма в журнал технической физики 48, № 19 (2022): 20. http://dx.doi.org/10.21883/pjtf.2022.19.53590.19339.
Повний текст джерелаWang, Yuda, Parveen Kumar, Leigh Morris Smith, Howard E. Jackson, Jan M. Yarrison-Rice, Craig Pryor, Jung-Hyun Kang, Qiang Gao, Hark Hoe Tan, and Chennupati Jagadish. "Tuning Band Energies in a Combined Axial and Radial GaAs/GaP Heterostructure." MRS Proceedings 1659 (2014): 139–42. http://dx.doi.org/10.1557/opl.2014.355.
Повний текст джерелаAnandan, Deepak, Che-Wei Hsu, and Edward Yi Chang. "Growth of III-V Antimonide Heterostructure Nanowires on Silicon Substrate for Esaki Tunnel Diode." Materials Science Forum 1055 (March 4, 2022): 1–6. http://dx.doi.org/10.4028/p-y19917.
Повний текст джерелаZhang, Guoqiang, Masato Takiguchi, Kouta Tateno, Takehiko Tawara, Masaya Notomi, and Hideki Gotoh. "Telecom-band lasing in single InP/InAs heterostructure nanowires at room temperature." Science Advances 5, no. 2 (February 2019): eaat8896. http://dx.doi.org/10.1126/sciadv.aat8896.
Повний текст джерелаShwartz, Nataliya L., Alla G. Nastovjak, and Igor G. Neizvestny. "Peculiarities of axial and radial Ge–Si heterojunction formation in nanowires: Monte Carlo simulation." Pure and Applied Chemistry 84, no. 12 (May 27, 2012): 2619–28. http://dx.doi.org/10.1351/pac-con-11-12-05.
Повний текст джерелаJohar, Muhammad Ali, Hyun-Gyu Song, Aadil Waseem, Jin-Ho Kang, Jun-Seok Ha, Yong-Hoon Cho, and Sang-Wan Ryu. "Ultrafast carrier dynamics of conformally grown semi-polar (112̄2) GaN/InGaN multiple quantum well co-axial nanowires on m-axial GaN core nanowires." Nanoscale 11, no. 22 (2019): 10932–43. http://dx.doi.org/10.1039/c9nr02823d.
Повний текст джерелаWen, C. Y., M. C. Reuter, J. Bruley, J. Tersoff, S. Kodambaka, E. A. Stach, and F. M. Ross. "Formation of Compositionally Abrupt Axial Heterojunctions in Silicon-Germanium Nanowires." Science 326, no. 5957 (November 26, 2009): 1247–50. http://dx.doi.org/10.1126/science.1178606.
Повний текст джерелаCornet, D. M., and R. R. LaPierre. "InGaAs/InP core–shell and axial heterostructure nanowires." Nanotechnology 18, no. 38 (August 31, 2007): 385305. http://dx.doi.org/10.1088/0957-4484/18/38/385305.
Повний текст джерелаThuong, Nguyen Thi, Nguyen Viet Minh, Nguyen Ngoc Tuan, and Vu Ngoc Tuoc. "Density Functional Based Tight Binding Study on Wurzite Core-Shell Nanowires Heterostructures Zno/Zns." Communications in Physics 21, no. 3 (September 19, 2011): 225. http://dx.doi.org/10.15625/0868-3166/21/3/172.
Повний текст джерелаSheehan, Martin, Quentin M. Ramasse, Hugh Geaney, and Kevin M. Ryan. "Linear heterostructured Ni2Si/Si nanowires with abrupt interfaces synthesised in solution." Nanoscale 10, no. 40 (2018): 19182–87. http://dx.doi.org/10.1039/c8nr05388j.
Повний текст джерелаKang, Joohoon, Wooyoung Shim, Seunghyun Lee, Jong Wook Roh, Jin-Seo Noh, Peter W. Voorhees, and Wooyoung Lee. "Thermodynamic-enabled synthesis of Bi/Bi14Te6 axial heterostructure nanowires." Journal of Materials Chemistry A 1, no. 7 (2013): 2395. http://dx.doi.org/10.1039/c2ta00203e.
Повний текст джерелаGeng, Hui, Xin Yan, Xia Zhang, Junshuai Li, Yongqing Huang, and Xiaomin Ren. "Analysis of critical dimensions for axial double heterostructure nanowires." Journal of Applied Physics 112, no. 11 (December 2012): 114307. http://dx.doi.org/10.1063/1.4767927.
Повний текст джерелаSadowski, T., and R. Ramprasad. "Core/Shell CdSe/CdTe Heterostructure Nanowires Under Axial Strain." Journal of Physical Chemistry C 114, no. 4 (January 7, 2010): 1773–81. http://dx.doi.org/10.1021/jp907150d.
Повний текст джерелаKoryakin, A. A., N. V. Sibirev, and D. A. Zeze. "Modeling of axial heterostructure formation in ternary III-V nanowires." Journal of Physics: Conference Series 643 (November 2, 2015): 012007. http://dx.doi.org/10.1088/1742-6596/643/1/012007.
Повний текст джерелаStokes, Killian, Grace Flynn, Hugh Geaney, Gerard Bree, and Kevin M. Ryan. "Axial Si–Ge Heterostructure Nanowires as Lithium-Ion Battery Anodes." Nano Letters 18, no. 9 (August 6, 2018): 5569–75. http://dx.doi.org/10.1021/acs.nanolett.8b01988.
Повний текст джерелаGhalamestani, Sepideh Gorji, Martin Ek, and Kimberly A. Dick. "Realization of single and double axial InSb-GaSb heterostructure nanowires." physica status solidi (RRL) - Rapid Research Letters 8, no. 3 (January 20, 2014): 269–73. http://dx.doi.org/10.1002/pssr.201308331.
Повний текст джерелаDubrovskii, V. G. "A model of axial heterostructure formation in III–V semiconductor nanowires." Technical Physics Letters 42, no. 3 (March 2016): 332–35. http://dx.doi.org/10.1134/s1063785016030196.
Повний текст джерелаZhao, Fuzhen, Huicong Liu, Houyu Zhu, Xiaoyu Jiang, Liqun Zhu, Weiping Li, and Haining Chen. "Amorphous/amorphous Ni–P/Ni(OH)2 heterostructure nanotubes for an efficient alkaline hydrogen evolution reaction." Journal of Materials Chemistry A 9, no. 16 (2021): 10169–79. http://dx.doi.org/10.1039/d1ta01062j.
Повний текст джерелаYe, Han, Pengfei Lu, Zhongyuan Yu, Yuxin Song, Donglin Wang, and Shumin Wang. "Critical Thickness and Radius for Axial Heterostructure Nanowires Using Finite-Element Method." Nano Letters 9, no. 5 (May 13, 2009): 1921–25. http://dx.doi.org/10.1021/nl900055x.
Повний текст джерелаDhar, J. C., A. Mondal, N. K. Singh, S. Chakrabartty, A. Bhattacharyya, and K. K. Chattopadhyay. "Effect of annealing on SiOx-TiO2 axial heterostructure nanowires and improved photodetection." Journal of Applied Physics 114, no. 24 (December 28, 2013): 244310. http://dx.doi.org/10.1063/1.4858420.
Повний текст джерелаBauer, J., V. Gottschalch, H. Paetzelt, and G. Wagner. "VLS growth of GaAs/(InGa)As/GaAs axial double-heterostructure nanowires by MOVPE." Journal of Crystal Growth 310, no. 23 (November 2008): 5106–10. http://dx.doi.org/10.1016/j.jcrysgro.2008.07.059.
Повний текст джерелаLohani, Jaya, Shivani Varshney, Dipendra S. Rawal, and Renu Tyagi. "Vertically aligned nanowires comprising AlGaN/GaN axial heterostructure by convenient maskless reactive ion etching." Materials Research Express 6, no. 10 (August 7, 2019): 105001. http://dx.doi.org/10.1088/2053-1591/ab35af.
Повний текст джерелаGeaney, Hugh, Emma Mullane, Quentin M. Ramasse, and Kevin M. Ryan. "Atomically Abrupt Silicon–Germanium Axial Heterostructure Nanowires Synthesized in a Solvent Vapor Growth System." Nano Letters 13, no. 4 (March 25, 2013): 1675–80. http://dx.doi.org/10.1021/nl400146u.
Повний текст джерелаJingwei Guo, 郭经纬, 黄辉 Hui Huang, 任晓敏 Xiaomin Ren, 颜鑫 Xin Yan, 蔡世伟 Shiwei Cai, 黄永清 Yongqing Huang, 王琦 Qi Wang, 张霞 Xia Zhang, and 王伟 Wei Wang. "Stacking-faults-free zinc blende GaAs/AlGaAs axial heterostructure nanowires during vapor-liquid-solid growth." Chinese Optics Letters 9, no. 4 (2011): 041601–41604. http://dx.doi.org/10.3788/col201109.041601.
Повний текст джерелаKrogstrup, Peter, Jun Yamasaki, Claus B. Sørensen, Erik Johnson, Jakob B. Wagner, Robert Pennington, Martin Aagesen, Nobuo Tanaka, and Jesper Nygård. "Junctions in Axial III−V Heterostructure Nanowires Obtained via an Interchange of Group III Elements." Nano Letters 9, no. 11 (November 11, 2009): 3689–93. http://dx.doi.org/10.1021/nl901348d.
Повний текст джерелаGuo, Jingwei, Hui Huang, Xiaomin Ren, Xin Yan, Shiwei Cai, Wei Wang, Yongqing Huang, Qi Wang, and Xia Zhang. "Realizing Zinc Blende GaAs/AlGaAs Axial and Radial Heterostructure Nanowires by Tuning the Growth Temperature." Journal of Materials Science & Technology 27, no. 6 (January 2011): 507–12. http://dx.doi.org/10.1016/s1005-0302(11)60099-6.
Повний текст джерелаFlynn, Grace, Quentin M. Ramasse, and Kevin M. Ryan. "Solvent Vapor Growth of Axial Heterostructure Nanowires with Multiple Alternating Segments of Silicon and Germanium." Nano Letters 16, no. 1 (December 18, 2015): 374–80. http://dx.doi.org/10.1021/acs.nanolett.5b03950.
Повний текст джерелаPaek, Jihyun, Masahito Yamaguchi, and Hiroshi Amano. "MBE–VLS growth of catalyst-free III–V axial heterostructure nanowires on (111)Si substrates." Journal of Crystal Growth 323, no. 1 (May 2011): 315–18. http://dx.doi.org/10.1016/j.jcrysgro.2010.11.124.
Повний текст джерелаKierdaszuk, Jakub, Mateusz Tokarczyk, Krzysztof M. Czajkowski, Rafał Bożek, Aleksandra Krajewska, Aleksandra Przewłoka, Wawrzyniec Kaszub, et al. "Surface-enhanced Raman scattering in graphene deposited on Al Ga1−N/GaN axial heterostructure nanowires." Applied Surface Science 475 (May 2019): 559–64. http://dx.doi.org/10.1016/j.apsusc.2019.01.040.
Повний текст джерелаYuan, Huibo, Lin Li, Zaijin Li, Yong Wang, Yi Qu, Xiaohui Ma, and Guojun Liu. "Axial heterostructure of Au-catalyzed InGaAs/GaAs nanowires grown by metal-organic chemical vapor deposition." Chemical Physics Letters 692 (January 2018): 28–32. http://dx.doi.org/10.1016/j.cplett.2017.11.061.
Повний текст джерелаPedapudi, Michael Cholines, та Jay Chandra Dhar. "A novel high performance photodetection based on axial NiO/β-Ga2O3 p-n junction heterostructure nanowires array". Nanotechnology 33, № 25 (30 березня 2022): 255203. http://dx.doi.org/10.1088/1361-6528/ac5b54.
Повний текст джерелаSo, Hyok, Dong Pan, Lixia Li, and Jianhua Zhao. "Foreign-catalyst-free growth of InAs/InSb axial heterostructure nanowires on Si (111) by molecular-beam epitaxy." Nanotechnology 28, no. 13 (March 1, 2017): 135704. http://dx.doi.org/10.1088/1361-6528/aa6051.
Повний текст джерелаHiruma, K., K. Tomioka, P. Mohan, L. Yang, J. Noborisaka, B. Hua, A. Hayashida, et al. "Fabrication of Axial and Radial Heterostructures for Semiconductor Nanowires by Using Selective-Area Metal-Organic Vapor-Phase Epitaxy." Journal of Nanotechnology 2012 (2012): 1–29. http://dx.doi.org/10.1155/2012/169284.
Повний текст джерелаArif, Omer, Valentina Zannier, Francesca Rossi, Daniele Ercolani, Fabio Beltram, and Lucia Sorba. "Self-Catalyzed InSb/InAs Quantum Dot Nanowires." Nanomaterials 11, no. 1 (January 13, 2021): 179. http://dx.doi.org/10.3390/nano11010179.
Повний текст джерелаTatsuoka, Hirokazu, Wen Li, Er Chao Meng, Daisuke Ishikawa, and Kaito Nakane. "Syntheses and Structural Control of Silicide, Oxide and Metallic Nano-Structured Materials." Solid State Phenomena 213 (March 2014): 35–41. http://dx.doi.org/10.4028/www.scientific.net/ssp.213.35.
Повний текст джерелаLari, L., T. Walther, M. H. Gass, L. Geelhaar, C. Chèze, H. Riechert, T. J. Bullough, and P. R. Chalker. "Direct observation by transmission electron microscopy of the influence of Ni catalyst-seeds on the growth of GaN–AlGaN axial heterostructure nanowires." Journal of Crystal Growth 327, no. 1 (July 2011): 27–34. http://dx.doi.org/10.1016/j.jcrysgro.2011.06.004.
Повний текст джерелаAnaya, J., A. Torres, J. Jiménez, A. Rodríguez, T. Rodríguez, and C. Ballesteros. "Raman Spectroscopy in Group IV Nanowires and Nanowire Axial Heterostructures." MRS Proceedings 1659 (2014): 143–48. http://dx.doi.org/10.1557/opl.2014.197.
Повний текст джерелаKryvyi, Serhii, Slawomir Kret, and Piotr Wojnar. "Precise strain mapping of nano-twinned axial ZnTe/CdTe hetero-nanowires by scanning nanobeam electron diffraction." Nanotechnology 33, no. 19 (February 15, 2022): 195704. http://dx.doi.org/10.1088/1361-6528/ac3fe3.
Повний текст джерелаLi, Yuan, Wenwu Shi, John C. Dykes, and Nitin Chopra. "Growth of silicon nanowires-based heterostructures and their plasmonic modeling." MRS Proceedings 1547 (2013): 103–8. http://dx.doi.org/10.1557/opl.2013.542.
Повний текст джерелаNeplokh, Vladimir, Vladimir Fedorov, Alexey Mozharov, Fedor Kochetkov, Konstantin Shugurov, Eduard Moiseev, Nuño Amador-Mendez, et al. "Red GaPAs/GaP Nanowire-Based Flexible Light-Emitting Diodes." Nanomaterials 11, no. 10 (September 29, 2021): 2549. http://dx.doi.org/10.3390/nano11102549.
Повний текст джерелаArif, Omer, Valentina Zannier, Vladimir G. Dubrovskii, Igor V. Shtrom, Francesca Rossi, Fabio Beltram, and Lucia Sorba. "Growth of Self-Catalyzed InAs/InSb Axial Heterostructured Nanowires: Experiment and Theory." Nanomaterials 10, no. 3 (March 10, 2020): 494. http://dx.doi.org/10.3390/nano10030494.
Повний текст джерелаMullane, E., H. Geaney, and K. M. Ryan. "Synthesis of silicon–germanium axial nanowire heterostructures in a solvent vapor growth system using indium and tin catalysts." Physical Chemistry Chemical Physics 17, no. 10 (2015): 6919–24. http://dx.doi.org/10.1039/c4cp04450a.
Повний текст джерелаSamantaray, Debadarshini, Abinash Kumar, Priyadarshini Ghosh, Dipanwita Chatterjee, Pavithra Bellare, and N. Ravishankar. "Axial-Radial Heterostructures of Telluride Nanowire." Microscopy and Microanalysis 26, S2 (July 30, 2020): 2834–36. http://dx.doi.org/10.1017/s1431927620022941.
Повний текст джерелаDayeh, Shadi A., and S. Tom Picraux. "Axial Ge/Si Nanowire Heterostructure Tunnel FETs." ECS Transactions 33, no. 6 (December 17, 2019): 373–78. http://dx.doi.org/10.1149/1.3487568.
Повний текст джерелаDubrovskii, Vladimir G. "Compositional control of gold-catalyzed ternary nanowires and axial nanowire heterostructures based on IIIP1−xAsx." Journal of Crystal Growth 498 (September 2018): 179–85. http://dx.doi.org/10.1016/j.jcrysgro.2018.06.021.
Повний текст джерелаZhou, Chen, Kun Zheng, Ping-Ping Chen, Syo Matsumura, Wei Lu, and Jin Zou. "Crystal-phase control of GaAs–GaAsSb core–shell/axial nanowire heterostructures by a two-step growth method." Journal of Materials Chemistry C 6, no. 25 (2018): 6726–32. http://dx.doi.org/10.1039/c8tc01529e.
Повний текст джерелаDayeh, Shadi A., Robert M. Dickerson, and S. Thomas Picraux. "Axial bandgap engineering in germanium-silicon heterostructured nanowires." Applied Physics Letters 99, no. 11 (September 12, 2011): 113105. http://dx.doi.org/10.1063/1.3634050.
Повний текст джерелаLi, F., P. D. Nellist, C. Lang, and D. J. H. Cockayne. "Imaging and analysis of axial heterostructured silicon nanowires." Journal of Physics: Conference Series 241 (July 1, 2010): 012088. http://dx.doi.org/10.1088/1742-6596/241/1/012088.
Повний текст джерелаOliva, Miriam, Guanhui Gao, Esperanza Luna, Lutz Geelhaar, and Ryan B. Lewis. "Axial GaAs/Ga(As, Bi) nanowire heterostructures." Nanotechnology 30, no. 42 (August 2, 2019): 425601. http://dx.doi.org/10.1088/1361-6528/ab3209.
Повний текст джерелаDubrovskii, V. G., A. A. Koryakin, and N. V. Sibirev. "Understanding the composition of ternary III-V nanowires and axial nanowire heterostructures in nucleation-limited regime." Materials & Design 132 (October 2017): 400–408. http://dx.doi.org/10.1016/j.matdes.2017.07.012.
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