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Статті в журналах з теми "Au based alloy nanowires"

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Автор: Grafiati

Опубліковано: 6 вересня 2023

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1

Zhang, Xi, and Gang Xiang. "Magnetic Properties of Iron-Based Alloy Nanowires upon Heat Treatment." Advanced Materials Research 239-242 (May 2011): 197–201. http://dx.doi.org/10.4028/www.scientific.net/amr.239-242.197.

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Fe56Co44 alloy nanowires were fabricated by electrodeposition with aluminum oxide template. Transmission Electron Microscope photographs show the nanowires are separate and have no twist with each other. Mossbauer spectroscopy results show the values of the isomer shift, hyperfine splitting and linewidth all decrease with increasing annealing temperature. Vibrating sample magnetometer (VSM) results of the alloy nanowire show that the coercive fields increase with increasing heat treatment temperature when the direction of applied magnetic field perpendicular to the axis of nanowires.

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2

Chauvin, Adrien, Cyril Delacôte, Mohammed Boujtita, Benoit Angleraud, Junjun Ding, Chang-Hwan Choi, Pierre-Yves Tessier, and Abdel-Aziz El Mel. "Dealloying of gold–copper alloy nanowires: From hillocks to ring-shaped nanopores." Beilstein Journal of Nanotechnology 7 (September 29, 2016): 1361–67. http://dx.doi.org/10.3762/bjnano.7.127.

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We report on a novel fabrication approach of metal nanowires with complex surface. Taking advantage of nodular growth triggered by the presence of surface defects created intentionally on the substrate as well as the high tilt angle between the magnetron source axis and the normal to the substrate, metal nanowires containing hillocks emerging out of the surface can be created. The approach is demonstrated for several metals and alloys including gold, copper, silver, gold–copper and gold–silver. We demonstrate that applying an electrochemical dealloying process to the gold–copper alloy nanowire arrays allows for transforming the hillocks into ring-like shaped nanopores. The resulting porous gold nanowires exhibit a very high roughness and high specific surface making of them a promising candidate for the development of SERS-based sensors.

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3

Miao, Teng, and LinSheng Liu. "The method of growing InGaAs nanowires in a dual-temperature zone tube furnace." Journal of Physics: Conference Series 2553, no. 1 (August 1, 2023): 012025. http://dx.doi.org/10.1088/1742-6596/2553/1/012025.

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Abstract In this paper, InAs, GaAs, and InGaAs nanowires are grown by CVD using a dual-temperature zone tube furnace. The grown nanowires are characterized and analyzed. Based on the traditional chemical vapor deposition method, a small quartz tube is innovatively used to first deliver group III materials to fuse with gold particles, thus forming a higher quality eutectic alloy. It then pushes in InAs and GaAs source materials for normal growth. With growing InGaAs nanowires, the source temperature of InGaAs nanowire growth is controlled by using a dual-temperature zone to achieve the control of InGaAs nanowire components.

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4

Garcia-Gil, Adrià, Subhajit Biswas, and Justin D. Holmes. "A Review of Self-Seeded Germanium Nanowires: Synthesis, Growth Mechanisms and Potential Applications." Nanomaterials 11, no. 8 (August 4, 2021): 2002. http://dx.doi.org/10.3390/nano11082002.

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Ge nanowires are playing a big role in the development of new functional microelectronic modules, such as gate-all-around field-effect transistor devices, on-chip lasers and photodetectors. The widely used three-phase bottom-up growth method utilising a foreign catalyst metal or metalloid is by far the most popular for Ge nanowire growth. However, to fully utilise the potential of Ge nanowires, it is important to explore and understand alternative and functional growth paradigms such as self-seeded nanowire growth, where nanowire growth is usually directed by the in situ-formed catalysts of the growth material, i.e., Ge in this case. Additionally, it is important to understand how the self-seeded nanowires can benefit the device application of nanomaterials as the additional metal seeding can influence electron and phonon transport, and the electronic band structure in the nanomaterials. Here, we review recent advances in the growth and application of self-seeded Ge and Ge-based binary alloy (GeSn) nanowires. Different fabrication methods for growing self-seeded Ge nanowires are delineated and correlated with metal seeded growth. This review also highlights the requirement and advantage of self-seeded growth approach for Ge nanomaterials in the potential applications in energy storage and nanoelectronic devices.

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5

da Câmara Santa Clara Gomes, Tristan, Nicolas Marchal, Flavio Abreu Araujo, and Luc Piraux. "Flexible thermoelectric films based on interconnected magnetic nanowire networks." Journal of Physics D: Applied Physics 55, no. 22 (February 3, 2022): 223001. http://dx.doi.org/10.1088/1361-6463/ac4d47.

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Abstract Recently, there has been increasing interest in the fabrication of flexible thermoelectric devices capable of cooling or recovering waste heat from hot surfaces with complex geometries. This paper reviews recent developments on three-dimensional networks of interconnected ferromagnetic nanowires, which offer new perspectives for the fabrication of flexible thermoelectric modules. The nanowire arrays are fabricated by direct electrodeposition into the crossed nanopores of polymeric templates. This low-cost, easy and reliable method allows control over the geometry, composition and morphology of the nanowire array. Here we report measured thermoelectric characteristics as a function of temperature and magnetic field of nanowire networks formed from pure metals (Co, Fe, Ni), alloys (NiCo, NiFe and NiCr) and FM/Cu multilayers (with FM = Co, Co50Ni50 and Ni80Fe20). Homogeneous nanowire arrays have high thermoelectric power factors, almost as high as their bulk constituents, and allow for positive and negative Seebeck coefficient values. These high thermoelectric power factors are essentially maintained in multilayer nanowires which also exhibit high magnetic modulability of electrical resistivity and Seebeck coefficient. This has been exploited in newly designed flexible thermoelectric switches that allow switching from an ‘off’ state with zero thermoelectric output voltage to an ‘on’ state that can be easily measured by applying or removing a magnetic field. Overall, these results are a first step towards the development of flexible thermoelectric modules that use waste heat to power thermally activated sensors and logic devices.

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6

Beloshapka, V., O. Melnyk, V. Soolshenko, and S. Poltoratski. "Nickel Nanowires Based on Icosahedral Structure." METALLOFIZIKA I NOVEISHIE TEKHNOLOGII 41, no. 5 (September 4, 2019): 673–82. http://dx.doi.org/10.15407/mfint.41.05.0673.

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7

Singh, Raghvendra P., Ralf Blossey, and Fabrizio Cleri. "DNA i-motif provides steel-like tough ends to chromosomes." MRS Proceedings 1621 (2014): 135–41. http://dx.doi.org/10.1557/opl.2014.282.

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ABSTRACTWe studied the structure and mechanical properties of DNA i-motif nanowires by means of molecular dynamics computer simulations. We built up to 230 nm-long nanowires, based on a repeated TC5 sequence from NMR crystallographic data, fully relaxed and equilibrated in water. The unusual C●C+ stacked structure, formed by four ssDNA strands arranged in an intercalated tetramer, is here fully characterized both statically and dynamically. By applying stretching, compression and bending deformations with the steered molecular dynamics and umbrella sampling methods, we extract the apparent Young’s and bending moduli of the nanowire, as well as estimates for the tensile strength and persistence length. According to our results, i-motif nanowires share similarities with structural proteins, as far as their tensile stiffness, but are closer to nucleic acids and flexible proteins, as far as their bending rigidity is concerned. Curiously enough, their tensile strength makes such DNA fragments tough as mild steel or a nickel alloy. Besides their yet to be clarified biological significance, i-motif nanowires may qualify as interesting candidates for nanotechnology templates, due to such outstanding mechanical properties.

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8

Brun, Christophe, Corentin Carmignani, Cheikh Tidiane-Diagne, Simona Torrengo, Pierre-Henri Elchinger, Patrick Reynaud, Aurélie Thuaire, et al. "First Integration Steps of Cu-based DNA Nanowires for interconnections." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2016, DPC (January 1, 2016): 000650–79. http://dx.doi.org/10.4071/2016dpc-tp15.

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In the wide range of emergent nanotechnologies, DNA-based microelectronics has shown an important potential for components miniaturization and auto-assembling approaches applicable to future silicon-based electronic circuits [1]. In order to pursue the Moore's law, interconnections must be indeed addressed at the nanoscale, with a good control of their size, location and electrical & thermal performances. With its natural auto-assembling property, its 2-nm-double-helix diameter and its several metallization possibilities, DNA is a promising candidate to build bio-inspired electronic components [1]. DNA has been first metallized by Erez Braun in 1998 using a silver electroless method [2]. Since 1998, several groups have worked on DNA metallization using different chemistries with metals such as Pd, Pt, Au, Ag and Cu [3]. Most of these works have presented electrical and morphological characterizations of few metallic nanowires. However, in order to initiate DNA-based-nanowires integration on silicon technologies, we must start to implement nanowires on silicon at wafer scale. We have thus developed a platform based on silicon technologies providing morphological and electrical characterizations of copper nanowires built from DNA [4]. This platform will allow us to simultaneously characterize a large number of nanowires, returning a statistic of their electrical performance, and thus allowing the optimization of the copper nanowire metallization process. Two main approaches are proposed to fabricate and contact a large number of copper nanowires with metallic electrodes in order to study their electrical behavior. In both approaches, a linear 16-μm-length DNA phage is used. The first approach consists in aligning DNA wires on a hydrophobic silicon oxide surface by a method called DNA combing. On a second time, aligned DNA wires are all metallized by electroless process [4]. 5-nm-diameter copper nanowires have been so far achieved by this method and focus on improving the metallization process is currently at stake. Finally, Ti/Au electrodes are fabricated on the nanowires by a classical lift-off process in order to electrically connect them. The advantage of this approach is the very accurate nanowires alignment and their homogeneity over the surface. However, the low number of aligned nanowires per surface unit (10–20μm−2) and the high electrical resistance of each (>kohms) makes the electrical characterization quite complex. On the other side, the second approach consists in fabricating the Ti/Au electrodes first and then aligning or randomly depositing the copper nanowires at their surface. Same protocols are used to align and metallize the DNA nanowires for both approaches. The advantage of this second approach is a higher nanowire density deposited on the electrodes. However, a higher contact resistance and a lower control of nanowires alignment are obtained. Both approaches are currently explored and permit to explore a wide range of parameters for copper nanowires metallization process improvement.

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9

Dadvand, Nazila, and Georges J. Kipouros. "Electroless Fabrication of Cobalt Alloys Nanowires within Alumina Template." Journal of Nanomaterials 2007 (2007): 1–6. http://dx.doi.org/10.1155/2007/46919.

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A new method of nanowire fabrication based on electroless deposition process is described. The method is novel compared to the current electroless procedure used in making nanowires as it involves growing nanowires from the bottom up. The length of the nanowires was controlled at will simply by adjusting the deposition time. The nanowires were fabricated within the nanopores of an alumina template. It was accomplished by coating one side of the template by a thin layer of palladium in order to activate the electroless deposition within the nanopores from bottom up. However, prior to electroless deposition process, the template was pretreated with a suitable wetting agent in order to facilitate the penetration of the plating solution through the pores. As well, the electroless deposition process combined with oblique metal evaporation process within a prestructured silicon wafer was used in order to fabricate long nanowires along one side of the grooves within the wafer.

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10

Meduri, P., G. U. Sumanasekera, Z. Chen, and M. K. Sunkara. "Composition Controlled Synthesis and Raman Analysis of Ge-Rich SixGe1–x Nanowires." Journal of Nanoscience and Nanotechnology 8, no. 6 (June 1, 2008): 3153–57. http://dx.doi.org/10.1166/jnn.2008.194.

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Here, we report the synthesis of SixGe1–x nanowires with x values ranging from 0 to 0.5 using bulk nucleation and growth from larger Ga droplets. Room temperature Raman spectroscopy is shown to determine the composition of the as-synthesized SixGe1–x nanowires. Analysis of peak intensities observed for Ge (near 300 cm–1) and the Si-Ge alloy (near 400 cm–1) allowed accurate estimation of composition compared to that based on the absolute peak positions. The results showed that the fraction of Ge in the resulting SixGe1–x alloy nanowires is controlled by the vapor phase composition of Ge.

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11

Wen, C. Y., M. C. Reuter, J. Bruley, J. Tersoff, S. Kodambaka, E. A. Stach, and F. M. Ross. "Formation of Compositionally Abrupt Axial Heterojunctions in Silicon-Germanium Nanowires." Science 326, no. 5957 (November 26, 2009): 1247–50. http://dx.doi.org/10.1126/science.1178606.

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We have formed compositionally abrupt interfaces in silicon-germanium (Si-Ge) and Si-SiGe heterostructure nanowires by using solid aluminum-gold alloy catalyst particles rather than the conventional liquid semiconductor–metal eutectic droplets. We demonstrated single interfaces that are defect-free and close to atomically abrupt, as well as quantum dots (i.e., Ge layers tens of atomic planes thick) embedded within Si wires. Real-time imaging of growth kinetics reveals that a low solubility of Si and Ge in the solid particle accounts for the interfacial abruptness. Solid catalysts that can form functional group IV nanowire-based structures may yield an extended range of electronic applications.

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12

Jin, Lihua, Zaihua Zhang, Zhihua Zhuang, Zheng Meng, Cong Li, and Yehua Shen. "PdPt bimetallic alloy nanowires-based electrochemical sensor for sensitive detection of ascorbic acid." RSC Advances 6, no. 48 (2016): 42008–13. http://dx.doi.org/10.1039/c6ra05087e.

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A novel PdPt bimetallic alloy nanowires-based electrochemical sensor for sensitive detection of ascorbic acid with remarkable electrocatalytic activity in a wide linear range (0.01–0.97 mM) and a detection limit as low as 0.2 μM.

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13

Zhang, Shumeng, Lei Zhang, Zhaojun Liu, Moxuan Liu, Qikui Fan, Kai Liu, and Chuanbo Gao. "Robust synthesis of ultrathin Au–Ag nanowires as a high-surface-area, synergistic substrate for constructing efficient Pt-based catalysts." Journal of Materials Chemistry A 6, no. 44 (2018): 22161–69. http://dx.doi.org/10.1039/c8ta05663c.

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14

Kim, In Yea, Jong Won Kim, Byeung Ju Lee, and Jae-Hong Lim. "Fabrication and Characteristics of a Conductive FeCo@Au Nanowire Alloy for Semiconductor Test Socket Connectors." Materials 16, no. 1 (December 30, 2022): 381. http://dx.doi.org/10.3390/ma16010381.

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The most promising approach for improving the electrical performance of connectors used in semiconductor test sockets involves increasing their electrical conductivity by incorporating one-dimensional (1D) conductive materials between zero-dimensional (0D) conductive materials. In this study, FeCo nanowires were synthesized by electroplating to prepare a material in which 1D materials could be magnetically aligned. Moreover, the nanowires were coated with highly conductive Au. The magnetization per unit mass of the synthesized FeCo and FeCo@Au nanowires was 167.2 and 13.9 emu/g, respectively. The electrical performance of rubber-based semiconductor connectors before and after the introduction of synthetic nanowires was compared, and it was found that the resistance decreased by 14%. The findings reported herein can be exploited to improve the conductivity of rubber-type semiconductor connectors, thereby facilitating the development of connectors using 0D and 1D materials.

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15

Hijazi, Hadi, Mohammed Zeghouane, and Vladimir G. Dubrovskii. "Thermodynamics of the Vapor–Liquid–Solid Growth of Ternary III–V Nanowires in the Presence of Silicon." Nanomaterials 11, no. 1 (January 2, 2021): 83. http://dx.doi.org/10.3390/nano11010083.

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Based on a thermodynamic model, we quantify the impact of adding silicon atoms to a catalyst droplet on the nucleation and growth of ternary III–V nanowires grown via the self-catalyzed vapor–liquid–solid process. Three technologically relevant ternaries are studied: InGaAs, AlGaAs and InGaN. For As-based alloys, it is shown that adding silicon atoms to the droplet increases the nanowire nucleation probability, which can increase by several orders magnitude depending on the initial chemical composition of the catalyst. Conversely, silicon atoms are found to suppress the nucleation rate of InGaN nanowires of different compositions. These results can be useful for understanding and controlling the vapor–liquid–solid growth of ternary III–V nanowires on silicon substrates as well as their intentional doping with Si.

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16

Sattayasamitsathit, Sirilak, Jared Burdick, Ralph Bash, Proespichaya Kanatharana, Panote Thavarungkul, and Joseph Wang. "Alloy Nanowires Bar Codes Based on Nondestructive X-ray Fluorescence Readout." Analytical Chemistry 79, no. 19 (October 2007): 7571–75. http://dx.doi.org/10.1021/ac071206m.

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17

García, Javier, Ruth Gutiérrez, Ana S. González, Ana I. Jiménez-Ramirez, Yolanda Álvarez, Víctor Vega, Heiko Reith, et al. "Exchange Bias Effect of Ni@(NiO,Ni(OH)2) Core/Shell Nanowires Synthesized by Electrochemical Deposition in Nanoporous Alumina Membranes." International Journal of Molecular Sciences 24, no. 8 (April 11, 2023): 7036. http://dx.doi.org/10.3390/ijms24087036.

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Tuning and controlling the magnetic properties of nanomaterials is crucial to implement new and reliable technologies based on magnetic hyperthermia, spintronics, or sensors, among others. Despite variations in the alloy composition as well as the realization of several post material fabrication treatments, magnetic heterostructures as ferromagnetic/antiferromagnetic coupled layers have been widely used to modify or generate unidirectional magnetic anisotropies. In this work, a pure electrochemical approach has been used to fabricate core (FM)/shell (AFM) Ni@(NiO,Ni(OH)2) nanowire arrays, avoiding thermal oxidation procedures incompatible with integrative semiconductor technologies. Besides the morphology and compositional characterization of these core/shell nanowires, their peculiar magnetic properties have been studied by temperature dependent (isothermal) hysteresis loops, thermomagnetic curves and FORC analysis, revealing the existence of two different effects derived from Ni nanowires’ surface oxidation over the magnetic performance of the array. First of all, a magnetic hardening of the nanowires along the parallel direction of the applied magnetic field with respect their long axis (easy magnetization axis) has been found. The increase in coercivity, as an effect of surface oxidation, has been observed to be around 17% (43%) at 300 K (50 K). On the other hand, an increasing exchange bias effect on decreasing temperature has been encountered when field cooling (3T) the oxidized Ni@(NiO,Ni(OH)2) nanowires below 100 K along their parallel lengths.

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18

Rauber, Markus, and Wolfgang Ensinger. "Organization of Nanowires into Complex 3D Assemblies by Template Electrodeposition." MRS Proceedings 1439 (2012): 5–10. http://dx.doi.org/10.1557/opl.2012.1151.

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ABSTRACTTo realize applications based on nanowires, the development of methods that allow the organization of nanostructures into integrated arrangements is crucial. While many different methods exist, the direct synthesis of complex nanowire structures is one of the most suitable approaches to efficiently connect numerous nanostructures to the macroscopic world. The fabrication of various 3D nanowire assemblies including arrays, networks, and hierarchical structures by combining specifically designed template materials with electrochemical deposition is demonstrated. The ion track template method is extended to create more complex structures by changing template production and electrodeposition parameters. In contrast to current synthesis routes, it is possible to independently control many of the parameters defining both (i) characteristics of individual nanowires (including dimensions and composition) and (ii) the arrangement of the nanoscale building blocks into nanowire assemblies determined by nanowire orientation and integration level. Results that highlight the benefits arising from the design of advanced 3D nanowire architectures are presented.

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19

Ren, Mengyun, Fangfang Chang, Ruifang Miao, Xianhong He, Lin Yang, Xiaolei Wang, and Zhengyu Bai. "Strained lattice platinum–palladium alloy nanowires for efficient electrocatalysis." Inorganic Chemistry Frontiers 7, no. 8 (2020): 1713–18. http://dx.doi.org/10.1039/d0qi00094a.

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20

Huang, Xing, Minghao Xie, Yihan Chen, Qingshuang Zong, Ziyu Liu, and Yong Jin. "Copper–silver oxide nanowires grown on an alloy electrode as an efficient electrocatalyst for water oxidation." RSC Advances 5, no. 33 (2015): 26150–56. http://dx.doi.org/10.1039/c5ra00820d.

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21

Li, Kexue, Jian Zhang, Jilong Tang, Yubin Kang, Fengyuan Lin, Xiaobing Hou, Zhipeng Wei, and Qun Hao. "The Self-Catalyzed Growth of GaAsSb Nanowires on a Si (111) Substrate Using Molecular-Beam Epitaxy." Coatings 13, no. 7 (July 13, 2023): 1243. http://dx.doi.org/10.3390/coatings13071243.

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GaAsSb semiconductor material, a ternary alloy, has long been recognized as a crucial semiconductor in the near infrared range due to its ability to finely adjust the wavelength through controlling the Sb component. In this work, we report on the pattern of orientation variation in self-catalyzed grown GaAsSb nanowires (NWs). Utilizing solid-source molecular-beam epitaxy (MBE), self-catalyzed GaAs and GaAsSb nanowires (NWs) were grown on Si (111) substrates. The influence of various Sb components on the growth direction of the nanowires in the ternary GaAsSb alloy was examined using scanning electron microscopy (SEM). The inclusion of Sb components was discovered to alter the growth direction of the nanowires, transitioning them from a vertical and inclined orientation to a configuration that encompassed vertical, inclined, and parallel orientations with respect to the Si (111) substrate. As the Sb component in GaAsSb increased, there was an increased likelihood of the nanowires growing parallel to the surface of the Si (111) substrate. A combination of X-ray diffraction (XRD) and Raman spectroscopy validated the presence of Sb components and indicated a high crystalline quality. Additionally, XRD confirmed that the Sb components aligned with the intended structure. These findings establish a solid material foundation for the development of high-performance GaAsSb-based devices.

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22

Dvoretckaia, Liliia, Vladislav Gridchin, Alexey Mozharov, Alina Maksimova, Anna Dragunova, Ivan Melnichenko, Dmitry Mitin, Alexandr Vinogradov, Ivan Mukhin, and Georgy Cirlin. "Light-Emitting Diodes Based on InGaN/GaN Nanowires on Microsphere-Lithography-Patterned Si Substrates." Nanomaterials 12, no. 12 (June 10, 2022): 1993. http://dx.doi.org/10.3390/nano12121993.

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The direct integration of epitaxial III-V and III-N heterostructures on Si substrates is a promising platform for the development of optoelectronic devices. Nanowires, due to their unique geometry, allow for the direct synthesis of semiconductor light-emitting diodes (LED) on crystalline lattice-mismatched Si wafers. Here, we present molecular beam epitaxy of regular arrays n-GaN/i-InGaN/p-GaN heterostructured nanowires and tripods on Si/SiO2 substrates prepatterned with the use of cost-effective and rapid microsphere optical lithography. This approach provides the selective-area synthesis of the ordered nanowire arrays on large-area Si substrates. We experimentally show that the n-GaN NWs/n-Si interface demonstrates rectifying behavior and the fabricated n-GaN/i-InGaN/p-GaN NWs-based LEDs have electroluminescence in the broad spectral range, with a maximum near 500 nm, which can be employed for multicolor or white light screen development.

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23

Dřínek, V., T. Křenek, M. Klementová, R. Fajgar, M. Pola, J. Savková, R. Medlín, and F. Novotný. "Formation of Cu1-xGex Nanoplatelets Using LPCVD of Ge2Me6 or Ge2Me6/Et4Pb Mixture." Nano 10, no. 04 (June 2015): 1550061. http://dx.doi.org/10.1142/s1793292015500617.

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Unlike synthesis of nanowires (1D nano-objects) the synthesis of nanoplatelets (2D nano-objects) has not been performed frequently. Herein, we report on the synthesis of Cu – Ge based on nanoplatelets with a high surface-to-volume ratio prepared by low pressure chemical vapor deposition (LPCVD) of Ge 2 Me 6 and a mixture of Ge 2 Me 6/ PbEt 4. Nanostructured deposits are composed of Cu 1-x Ge x nanoplatelets, Ge nanowires and Ge nanoparticles. The nanoplatelets, which have the lateral size up to several tens of micrometers and thickness of 100–400 nm, belong to the cubic α phase of Cu 91 Ge 9 alloy ( Ge admixture in cubic Cu ) and hexagonal ζ phase of Cu 85 Ge 15 alloy. Nanowires composed of cubic Ge have a diameter of about 30 nm and length of several tens of micrometers. Lead does not enter any of these phases due to Pb – Cu and Pb – Ge immiscibility; therefore, it was observed as separate nanoparticles.

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24

Gayen, Meghabarna, Shwetha Ariyadka, Sakshi Agarwal, Dipanwita Chatterjee, Abhishek Singh, and Narayanan Ravishankar. "Tuning Catalytic Activity in Ultrathin Bimetallic Nanowires Via Surface Segregation: Application in Electrochemical Methanol Oxidation." ECS Meeting Abstracts MA2022-01, no. 38 (July 7, 2022): 1702. http://dx.doi.org/10.1149/ma2022-01381702mtgabs.

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The reaction kinetics and efficiency in any catalytic process is controlled by the adsorption and desorption of reactant and intermediates on the surface of catalyst. As a consequence, the surface properties, composition and geometry of the catalyst dictates the mechanism of reactions. The surface electronic structure is modulated by variations in surface and subsurface atomic configurations, e.g., ordering and surface segregation, which in turn can vividly affects catalytic properties.1,2 A great deal of efforts are being devoted to develop efficient heterogenous catalyst by critically controlling the surface structure and chemistry. Here, I would like to present results on two different strategies for controlling the surface composition in ultrathin bimetallic AuPd nanowires. Au nanowire template-based method was used to grow AuPd wires by gradually increasing the amount of Pd.3 Percentage of composition of Au and Pd in AuPd nanowires gave either alloy nanowires with Au-rich compositions or core-shell structure at higher Pd compositions with Au-rich core and Pd-rich shell. Surface morphology of alloyed nanowires were induced through segregation of Pd to the surface by annealing under controlled CO atmosphere. High resolution microscopic imaging was possible due to the fact of substantial difference in the atomic number between Au and Pd. Electrocatalytic methanol oxidation reaction (MOR) in alkaline medium is important for energy conversion and was selected to study the catalytic activity of AuPd nanowires. A nearly monotonic increase of MOR potential was observed with increase in Pd content. Interestingly, a typical volcano type behavior of the specific activity was observed with different composition and with 40 and 50% Pd samples showed the optimum values in terms of current, potential and If/Ib values. Owing to a higher Pd content of CO-annealed nanowires, a lowering of potential was observed though the specific activity was maintained. These findings provide clear strategies to independently control the reaction potential and the activities of nanocatalysts with smaller amounts of the expensive active metal. The compositional effects on the electronic structure of the AuPd nanowires (catalyst surface) as well as binding energy of intermediates involved in the MOR was investigated using DFT calculations. d-band center analysis was employed to check interaction of CO* which a major intermediate of MOR with the catalyst surface. The theoretical investigation align well with the experimental results where it was found that the MOR potential increases with increasing amount of Pd and for the Au rich case the reaction does not reach up to CO2 but yields HCHO as a product at lower potentials. From our experimental finding it was evident that it is possible to lower the MOR potential to attain comparable or better activity through enrichment with the precious metal on the surface while essentially dropping the real quantity used. References: (1) Zhang, N.; Shao, Q.; Xiao, X.; Huang, X. Advanced Catalysts Derived from Composition-Segregated Platinum–Nickel Nanostructures: New Opportunities and Challenges. Adv. Funct. Mater. 2019, 29 (13), 1–28. (2) Ruban, A. V.; Skriver, H. L.; Nørskov, J. K. Surface Segregation Energies in Transition-Metal Alloys. Phys. Rev. B - Condens. Matter Mater. Phys. 1999, 59 (24), 15990–16000. (3) Chatterjee, D.; Shetty, S.; Müller-Caspary, K.; Grieb, T.; Krause, F. F.; Schowalter, M.; Rosenauer, A.; Ravishankar, N. Ultrathin Au-Alloy Nanowires at the Liquid–Liquid Interface. Nano Letters 2018, 18 (3), 1903–1907. Figure 1

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Sun, Yanli, Hongyan Yang, Xiaohui Yu, Haowen Meng, and Xinhua Xu. "A novel non-enzymatic amperometric glucose sensor based on a hollow Pt–Ni alloy nanotube array electrode with enhanced sensitivity." RSC Advances 5, no. 86 (2015): 70387–94. http://dx.doi.org/10.1039/c5ra13383a.

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A non-enzymatic electrode is proposed as a glucose sensor based on Pt-replaced Ni nanowires which are prepared by constant current electro-deposition within the anodic alumina membrane and galvanic replacement reaction.

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26

Ma, Haiguang, Jun Xu, Kunji Chen, and Linwei Yu. "Synergetic effect in rolling GaIn alloy droplets enables ultralow temperature growth of silicon nanowires at 70 °C on plastics." Nanoscale 12, no. 16 (2020): 8949–57. http://dx.doi.org/10.1039/d0nr01283a.

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Junk, Yannik, Mingshan Liu, Marvin Frauenrath, Jean-Michel Hartmann, Detlev Gruetzmacher, Dan Buca, and Qing-Tai Zhao. "Vertical GeSn/Ge Heterostructure Gate-All-Around Nanowire p-MOSFETs." ECS Meeting Abstracts MA2022-01, no. 29 (July 7, 2022): 1285. http://dx.doi.org/10.1149/ma2022-01291285mtgabs.

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In recent years, Ge-based group-IV alloys (GeSn, SiGeSn) have received a significant amount of attention as candidates to replace Silicon for future low power and high performance nanoelectronics [1]. The interest in these materials stems primarily from the fact that, by varying the Sn-content of the alloy, it is possible to precisely tune its bandgap from indirect to direct [2], which even opens up the possibility to switch the carrier transport from larger mass low mobility L-valley electrons to the lower mass and high mobility Γ-valley electrons. Adding Si atoms into GeSn alloys enables additional strain engineering by decoupling the lattice constant from the band gap and enables the fabrication of devices to target specific applications. Ge exhibits superior hole mobility over Si and GeSn is predicted to further improve carrier mobilities for both electrons and holes, while still retaining Si CMOS compatibility [3]. In this Abstract, we present the fabrication and characterization of Ge- and GeSn-based vertical gate-all-around (GAA) nanowire (NW) p-MOSFETs. Multilayer stacks of Ge and GeSn were grown on a Ge virtual substrate (Ge-VS) using industrial CVD reactors and subsequently characterized, confirming the high quality of the alloys. On these GeSn/Ge heterostructures, vertical GAA nanowire FETs were fabricated using a top-down approach. First, nanowires were defined by electron-beam lithography and subsequently etched anisotropically using reactive ion etching (RIE). The diameter of the nanowires was reduced by digital etching, consisting of repeated combined GeOx layer formation by plasma oxidation and removal in diluted HF solution. This way nanowires with a diameter down to 20 nm and a height of 210 nm were fabricated. A two-step process was employed for gate dielectric formation to ensure a low interface trap density: (i), deposition of a thin layer of Al2O3, followed by an O2-plasma post-oxidation step; (ii) deposition of a HfO2 dielectric layer to reach the required EOT (equivalent oxide thickness). TiN deposited by sputtering forms the gate metal. Planarization and isotropic dry etching were performed to remove the TiN on the top of the nanowire. After a second planarization step, NiGe-contacts were formed on the exposed top nanowire by Ni-deposition followed by a forming-gas annealing step. Finally, metal contacts for gate and source/drain were added. The resulting Ge-NW-pMOSFETs exhibit high electrical performances. A low subthreshold slope (SS) of 66 mV/dec, a low drain-induced barrier lowering (DIBL) of 35 mV/V and an I on/I off-ratio of 2.1×106 were measured for nanowires with a diameter of 20 nm. For 65 nm NWs, the I on/I off-ratio improves, which is attributed to the decreased contact resistance on top of the NWs, leading to larger on-currents. The peak transconductance for the Ge NWs reached ~190 µS/µm (V DS=-0.5 V). Adopting a GeSn/Ge-heterostructure, with GeSn on top of the nanowire used as source the device performances are strongly enhanced. The on-current I on was increased by ~32%, mostly due to the reduced contact resistivity of the smaller bandgap of GeSn compared to Ge. It was also observed that adopting GeSn alloys leads to an increase in transconductance, G max, to a respectable value of ~870 µS/µm, almost 3 times larger as reported to date for Ge NWs. Moreover, both SS and DIBL are improved by decreasing the NW diameter as a consequence of improved electrostatic gate control over the channel. These results demonstrate that the incorporation of GeSn into Ge-MOSFET technology yields a significant advantage and confirm its high potential for low-power-high-performance nanoelectronics. Fig. 1: (a) Schematic of the GAA nanowire FET based on a GeSn/Ge-heterostructure. (b) Optical image on the metallic contacts (c) Transfer curve of a Ge nanowire pFET with a diameter of 20 nm. The SS is 68 mV/dec and the DIBL is 35 mV/V. (d) Transfer curves of Ge0.92Sn0.08/Ge nanowire pFETs with a diameter of 65 nm and different EOTs. Acknowledgments The authors acknowledge support from the German BMBF project “SiGeSn NanoFETs”. References: [1] M. Liu et al. ACS Appl. Nano Mater. 4, 94-101 (2021) [2] S. Wirths et al. Nature Photonics 9, 88-92 (2015) [3] J. Kouvetakis, J. Menendez, A. V. G. Chizmeshya: Annu. Rev. Mater. Res. 36:497-554 (2006) Figure 1

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28

Giacalone, Francesco, MaÁngeles Herranz, Lucia Grüter, Ma Teresa González, Michel Calame, Christian Schönenberger, Carlos R. Arroyo, et al. "Tetrathiafulvalene-based molecular nanowires." Chemical Communications, no. 46 (2007): 4854. http://dx.doi.org/10.1039/b710739k.

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29

Liu, Lifeng, Zhipeng Huang, Daoai Wang, Roland Scholz, and Eckhard Pippel. "The fabrication of nanoporous Pt-based multimetallic alloy nanowires and their improved electrochemical durability." Nanotechnology 22, no. 10 (February 2, 2011): 105604. http://dx.doi.org/10.1088/0957-4484/22/10/105604.

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30

Ma, Sai, Shuanglong Feng, Shuai Kang, Feng Wang, Xie Fu, and Wenqiang Lu. "A High Performance Solar-Blind Detector Based on Mixed–Phase Zn0.45Mg0.55O Alloy Nanowires Network." Electronic Materials Letters 15, no. 3 (March 5, 2019): 303–13. http://dx.doi.org/10.1007/s13391-019-00121-2.

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31

Wang, Ying, Lei Zhang, Kuibo Yin, Jie Zhang, Hui Gao, Na Liu, Zhangquan Peng, and Zhonghua Zhang. "Nanoporous Iridium-Based Alloy Nanowires as Highly Efficient Electrocatalysts Toward Acidic Oxygen Evolution Reaction." ACS Applied Materials & Interfaces 11, no. 43 (October 8, 2019): 39728–36. http://dx.doi.org/10.1021/acsami.9b09412.

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32

K. Kehoe, Daniel, Luis Romeral, Ross Lundy, Michael A. Morris, Michael G. Lyons, and Yurii K. Gun’ko. "One Dimensional AuAg Nanostructures as Anodic Catalysts in the Ethylene Glycol Oxidation." Nanomaterials 10, no. 4 (April 10, 2020): 719. http://dx.doi.org/10.3390/nano10040719.

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Direct alcohol fuel cells are highly promising as efficient power sources for various mobile and portable applications. However, for the further advancement of fuel cell technology it is necessary to develop new, cost-effective Pt-free electrocatalysts that could provide efficient alcohol oxidation and also resist cross-over poisoning. Here, we report new electrocatalytic materials for ethylene glycol oxidation, which are based on AuAg linear nanostructures. We demonstrate a low temperature tunable synthesis that enables the preparation of one dimensional (1D) AuAg nanostructures ranging from nanowires to a new nano-necklace-like structure. Using a two-step method, we showed that, by aging the initial reaction mixture at various temperatures, we produced ultrathin AuAg nanowires with a diameter of 9.2 ± 2 and 3.8 ± 1.6 nm, respectively. These nanowires exhibited a high catalytic performance for the electro-oxidation of ethylene glycol with remarkable poisoning resistance. These results highlight the benefit of 1D metal alloy-based nanocatalysts for fuel cell applications and are expected to make an important contribution to the further development of fuel cell technology.

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33

Gebavi, Hrvoje, Davor Ristić, Nikola Baran, Marijan Marciuš, Vlatko Gašparić, Kamran Syed, and Mile Ivanda. "Development of silicon nanowires based on Ag-Au metal alloy seed system for sensing technologies." Sensors and Actuators A: Physical 331 (November 2021): 112931. http://dx.doi.org/10.1016/j.sna.2021.112931.

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34

Sharma, Monika, Anindita Das, and Bijoy K. Kuanr. "Co-based full heusler alloy nanowires: Modulation of static and dynamic properties through deposition parameters." AIP Advances 9, no. 12 (December 1, 2019): 125054. http://dx.doi.org/10.1063/1.5130036.

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35

Khan, Suleman, Naeem Ahmad, Nisar Ahmed, Affan Safeer, Javed Iqbal, and X. F. Han. "Structural, magnetic and transport properties of Fe-based full Heusler alloy Fe2CoSn nanowires prepared by template-based electrodeposition." Journal of Magnetism and Magnetic Materials 465 (November 2018): 462–70. http://dx.doi.org/10.1016/j.jmmm.2018.05.013.

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36

Wang, Wenwen, Xinyi Bai, Xiaochu Yuan, Yumin Liu, Lin Yang, and Fangfang Chang. "Platinum-Cobalt Nanowires for Efficient Alcohol Oxidation Electrocatalysis." Materials 16, no. 2 (January 15, 2023): 840. http://dx.doi.org/10.3390/ma16020840.

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The compositions and surface facets of platinum (Pt)-based electrocatalysts are of great significance for the development of direct alcohol fuel cells (DAFCs). We reported an approach for preparing ultrathin PtnCo100−n nanowire (NW) catalysts with high activity. The PtnCo100−n NW alloy catalysts synthesized by single-phase surfactant-free synthesis have adjustable compositions and (111) plane and strain lattices. X-ray diffraction (XRD) results indicate that the alloy composition can adjust the lattice shrinkage or expansion of PtnCo100−n NWs. X-ray photoelectron spectroscopy (XPS) results show that the electron structure of Pt is changed by the alloying effect caused by electron modulation in the d band, and the chemical adsorption strength of Pt is decreased, thus the catalytic activity of Pt is increased. The experimental results show that the activity of PtnCo100−n for the oxidation of methanol and ethanol is related to the exposed crystal surface, strain lattice and composition of catalysts. The PtnCo100−n NWs exhibit stronger electrocatalytic performance for both methanol oxidation reaction (MOR) and ethanol oxidation reaction (EOR). The dominant (111) plane Pt53Co47 exhibits the highest electrocatalytic activity in MOR, which is supported by the results of XPS. This discovery provides a new pathway to design high activity, stability nanocatalysts to enhance direct alcohol fuel cells.

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37

Kwon, Hyungho, Dong Jin Han, and Byung Yang Lee. "All-solid-state flexible supercapacitor based on nanotube-reinforced polypyrrole hollowed structures." RSC Advances 10, no. 68 (2020): 41495–502. http://dx.doi.org/10.1039/d0ra08064k.

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38

Patella, Bernardo, Claudio Zanca, Fabrizio Ganci, Sonia Carbone, Francesco Bonafede, Giuseppe Aiello, Rosario Miceli, Filippo Pellitteri, Philippe Mandin, and Rosalinda Inguanta. "Pd–Co-Based Electrodes for Hydrogen Production by Water Splitting in Acidic Media." Materials 16, no. 2 (January 4, 2023): 474. http://dx.doi.org/10.3390/ma16020474.

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To realize the benefits of a hydrogen economy, hydrogen must be produced cleanly, efficiently and affordably from renewable resources and, preferentially, close to the end-users. The goal is a sustainable cycle of hydrogen production and use: in the first stage of the cycle, hydrogen is produced from renewable resources and then used to feed a fuel cell. This cycle produces no pollution and no greenhouse gases. In this context, the development of electrolyzers producing high-purity hydrogen with a high efficiency and low cost is of great importance. Electrode materials play a fundamental role in influencing electrolyzer performances; consequently, in recent years considerable efforts have been made to obtain highly efficient and inexpensive catalyst materials. To reach both goals, we have developed electrodes based on Pd–Co alloys to be potentially used in the PEMEL electrolyzer. In fact, the Pd–Co alloy is a valid alternative to Pt for hydrogen evolution. The alloys were electrodeposited using two different types of support: carbon paper, to fabricate a porous structure, and anodic alumina membrane, to obtain regular arrays of nanowires. The goal was to obtain electrodes with very large active surface areas and a small amount of material. The research demonstrates that the electrochemical method is an ideal technique to obtain materials with good performances for the hydrogen evolution reaction. The Pd–Co alloy composition can be controlled by adjusting electrodeposition parameters (bath composition, current density and deposition time). The main results concerning the fabrication process and the characterization are presented and the performance in acid conditions is discussed.

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39

Zhou, Kai Ling, Chang Bao Han, Cai Fu Li, Jinting Jiu, Yang Yang, Ling Li, Hao Wang, et al. "Highly Stable Transparent Conductive Electrodes Based on Silver–Platinum Alloy-Walled Hollow Nanowires for Optoelectronic Devices." ACS Applied Materials & Interfaces 10, no. 42 (September 26, 2018): 36128–35. http://dx.doi.org/10.1021/acsami.8b12238.

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40

Bucamp, A., C. Coinon, S. Lepilliet, D. Troadec, G. Patriarche, M. H. Diallo, V. Avramovic, K. Haddadi, X. Wallart, and L. Desplanque. "In-plane InGaAs/Ga(As)Sb nanowire based tunnel junctions grown by selective area molecular beam epitaxy." Nanotechnology 33, no. 14 (January 12, 2022): 145201. http://dx.doi.org/10.1088/1361-6528/ac45c5.

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Abstract In-plane InGaAs/Ga(As)Sb heterojunction tunnel diodes are fabricated by selective area molecular beam epitaxy with two different architectures: either radial InGaAs core/Ga(As)Sb shell nanowires or axial InGaAs/GaSb heterojunctions. In the former case, we unveil the impact of strain relaxation and alloy composition fluctuations at the nanoscale on the tunneling properties of the diodes, whereas in the latter case we demonstrate that template assisted molecular beam epitaxy can be used to achieve a very precise control of tunnel diodes dimensions at the nanoscale with a scalable process. In both cases, negative differential resistances with large peak current densities are achieved.

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41

Leshchenko, Egor D., Masoomeh Ghasemi, Vladimir G. Dubrovskii, and Jonas Johansson. "Nucleation-limited composition of ternary III–V nanowires forming from quaternary gold based liquid alloys." CrystEngComm 20, no. 12 (2018): 1649–55. http://dx.doi.org/10.1039/c7ce02201h.

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42

Загорский, Д. Л., К. В. Фролов, С. А. Бедин, И. В. Перунов, М. А. Чуев, А. А. Ломов та И. М. Долуденко. "Структура и магнитные свойства нанопроволок из маталлов группы железа, полученных методом матричного синтеза". Физика твердого тела 60, № 11 (2018): 2075. http://dx.doi.org/10.21883/ftt.2018.11.46642.08nn.

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Abstract —Samples of arrays of nanowires are produced from iron, iron–cobalt and iron–nickel alloys via matrix synthesis based on polymer track membranes with pore diameters ranging from 30 to 300 nm. The influence of stress and pore diameter on the galvanic process and structure of nanowires is studied. The arrays of nanowires are examined by microscopy and X-ray diffraction. The magnetic properties are inspected via magnetometry and Mössbauer spectroscopy. The angular dependences of hysteresis loop shape are obtained and comprehensively discussed. As shown, decreasing the growth stress and/or increasing the pore diameter make the Mössbauer spectra of nanowires similar to those of bulk materials. Furthermore, the higher the growth stress is, the larger is the coercive force of nanowires. For the studied species of nanomaterials, the ability to control the magnetic properties during the synthesis is shown, as well.

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43

Wang, Le-ping, Gang Chen, Qi-xin Shen, Guo-min Li, Shi-you Guan, and Bing Li. "Direct electrodeposition of ionic liquid-based template-free SnCo alloy nanowires as an anode for Li-ion batteries." International Journal of Minerals, Metallurgy, and Materials 25, no. 9 (September 2018): 1027–34. http://dx.doi.org/10.1007/s12613-018-1653-0.

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44

Demami, F., L. Ni, R. Rogel, A. C. Salaun, and L. Pichon. "Silicon nanowires based resistors as gas sensors." Sensors and Actuators B: Chemical 170 (July 2012): 158–62. http://dx.doi.org/10.1016/j.snb.2011.04.083.

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45

Suresha, Kasala. "Thermopower in Si-Ge Alloy Nanowire." International Journal of Chemistry, Mathematics and Physics 7, no. 2 (2023): 01–05. http://dx.doi.org/10.22161/ijcmp.7.2.1.

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In this article, we studied the past and existing research in nanowire (NW) especially based on SiGe NWs. The basic Thermoelectric (TE) principles and theories are introduced and the factors that may influence the TE performance of SiGe NWs are discussed. The superiority of the group IV material-based NWs as TE materials are detailed with feasible structures while their fabrication methods and TE measurements are also reviewed. The existing SiGe NW are discussed for their potential applications and the feasible applications are illustrated. Finally, the variation of parameter TE on Temperature and carrier concentration is discussed and compare theoretically with the available experimental data.

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46

Ahn, Jung-Ho, Guoxiu Wang, Yong-Jin Kim, H. M. Lee, and Hyung-Sheop Shin. "Synthesis and properties of Ti–O based nanowires." Journal of Alloys and Compounds 504 (August 2010): S361—S363. http://dx.doi.org/10.1016/j.jallcom.2010.03.032.

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47

von Gratowski, Svetlana, Victor Koledov, Zoya Kosakowskiya, Peter Lega, Andrey Orlov, and Monica A. Cotta. "Mechanical Bottom-up Nano-Assembling and Nano-Manipulation Using Shape Memory Alloy Nano-Gripper." Solid State Phenomena 323 (August 30, 2021): 130–39. http://dx.doi.org/10.4028/www.scientific.net/ssp.323.130.

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The numerous 1-D and 2-D nanomaterials: nanotubes, nanowires (NWs), graphene, etc. were discovered, synthesized and intensively studied in the past decades. These nanomaterials had appeared to reveal the unique physical and functional properties allowing constructing the large number of nanodevice based on single nanoobjects. Recently many studies have led to a wide range of proof-of-concept of individual nanoscale devices including nanolasers, nanosensors, field-effect transistors (nanoFETs) and many others based on NWs, carbon nanotubes (CNT) and many other nanoobjects. Such nanodevices represent attractive building blocks for hierarchical assembly of microscale and macroscopic devices which are attractive for creating of micro-and –macro-devices and arrays by the bottom-up and hybrid paradigm. In this paper the conceptual survey is given of nowadays achievements in the field of mechanical bottom-up nanoassembling. We emphasize on the system based on smallest and the fastest in the World nanotweezer developed on the base of the new smart materials with shape memory effect for nanomanipulation of real nanoobjects. We discuss the recent experiments on nanomanipulation, nanoassembling and nanomanufacturing of nanoand micro-devices using this method, which in many cases can replaced very expensive “top-down” technologies.

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48

Kim, M., B. H. Jeon, J. Y. Kim, and J. H. Choi. "Characterization of GaN nanowires and light-emitting devices based on a GaN nanowire-PVK nanocomposite." Synthetic Metals 135-136 (April 2003): 743–44. http://dx.doi.org/10.1016/s0379-6779(02)00828-7.

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49

Marchal, Nicolas, Tristan da Câmara Santa Clara Gomes, Flavio Abreu Araujo, and Luc Piraux. "Giant Magnetoresistance and Magneto-Thermopower in 3D Interconnected NixFe1−x/Cu Multilayered Nanowire Networks." Nanomaterials 11, no. 5 (April 27, 2021): 1133. http://dx.doi.org/10.3390/nano11051133.

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The versatility of the template-assisted electrodeposition technique to fabricate complex three-dimensional networks made of interconnected nanowires allows one to easily stack ferromagnetic and non-magnetic metallic layers along the nanowire axis. This leads to the fabrication of unique multilayered nanowire network films showing giant magnetoresistance effect in the current-perpendicular-to-plane configuration that can be reliably measured along the macroscopic in-plane direction of the films. Moreover, the system also enables reliable measurements of the analogous magneto-thermoelectric properties of the multilayered nanowire networks. Here, three-dimensional interconnected NixFe1−x/Cu multilayered nanowire networks (with 0.60≤x≤0.97) are fabricated and characterized, leading to large magnetoresistance and magneto-thermopower ratios up to 17% and −25% in Ni80Fe20/Cu, respectively. A strong contrast is observed between the amplitudes of magnetoresistance and magneto-thermoelectric effects depending on the Ni content of the NiFe alloys. In particular, for the highest Ni concentrations, a strong increase in the magneto-thermoelectric effect is observed, more than a factor of 7 larger than the magnetoresistive effect for Ni97Fe3/Cu multilayers. This sharp increase is mainly due to an increase in the spin-dependent Seebeck coefficient from −7 µV/K for the Ni60Fe40/Cu and Ni70Fe30/Cu nanowire arrays to −21 µV/K for the Ni97Fe3/Cu nanowire array. The enhancement of the magneto-thermoelectric effect for multilayered nanowire networks based on dilute Ni alloys is promising for obtaining a flexible magnetic switch for thermoelectric generation for potential applications in heat management or logic devices using thermal energy.

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50

Zarezadeh, E., and A. Ghorbani. "Bipolar photoresponse ultraviolet photodetectors based on ZnO nanowires." Materials Research Express 7, no. 5 (May 22, 2020): 056203. http://dx.doi.org/10.1088/2053-1591/ab9205.

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