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Статті в журналах з теми "Atomically thin"
Horiuchi, Noriaki. "Atomically thin materials." Nature Photonics 12, no. 11 (October 26, 2018): 641. http://dx.doi.org/10.1038/s41566-018-0294-1.
Повний текст джерелаKim, Cheol-Joo, A. Sánchez-Castillo, Zack Ziegler, Yui Ogawa, Cecilia Noguez, and Jiwoong Park. "Chiral atomically thin films." Nature Nanotechnology 11, no. 6 (February 22, 2016): 520–24. http://dx.doi.org/10.1038/nnano.2016.3.
Повний текст джерелаKubie, Lenore, Marissa S. Martinez, Elisa M. Miller, Lance M. Wheeler, and Matthew C. Beard. "Atomically Thin Metal Sulfides." Journal of the American Chemical Society 141, no. 30 (July 5, 2019): 12121–27. http://dx.doi.org/10.1021/jacs.9b05807.
Повний текст джерелаLiu, Dong, and Hao Chen. "Atomically thin planar metasurfaces." Journal of Photonics for Energy 9, no. 03 (April 8, 2019): 1. http://dx.doi.org/10.1117/1.jpe.9.032716.
Повний текст джерелаKim, Seong Keun. "Atomically thin indium oxide transistors." Nature Electronics 5, no. 3 (March 2022): 129–30. http://dx.doi.org/10.1038/s41928-022-00734-w.
Повний текст джерелаShi, Su-Fei, and Feng Wang. "Atomically thin p–n junctions." Nature Nanotechnology 9, no. 9 (September 2014): 664–65. http://dx.doi.org/10.1038/nnano.2014.186.
Повний текст джерелаGarcía de Abajo, F. Javier, and Alejandro Manjavacas. "Plasmonics in atomically thin materials." Faraday Discussions 178 (2015): 87–107. http://dx.doi.org/10.1039/c4fd00216d.
Повний текст джерелаLi, Lu Hua, Ling Li, Xiujuan J. Dai, and Ying Chen. "Atomically thin boron nitride nanodisks." Materials Letters 106 (September 2013): 409–12. http://dx.doi.org/10.1016/j.matlet.2013.05.090.
Повний текст джерелаZhao, Huan, Zhipeng Dong, He Tian, Don DiMarzi, Myung-Geun Han, Lihua Zhang, Xiaodong Yan, et al. "Atomically Thin Femtojoule Memristive Device." Advanced Materials 29, no. 47 (October 25, 2017): 1703232. http://dx.doi.org/10.1002/adma.201703232.
Повний текст джерелаLynch, Jason, Ludovica Guarneri, Deep Jariwala, and Jorik van de Groep. "Exciton resonances for atomically-thin optics." Journal of Applied Physics 132, no. 9 (September 7, 2022): 091102. http://dx.doi.org/10.1063/5.0101317.
Повний текст джерелаДисертації з теми "Atomically thin"
Bandurin, Denis. "Electron transport in atomically thin crystals." Thesis, University of Manchester, 2017. https://www.research.manchester.ac.uk/portal/en/theses/electron-transport-in-atomically-thin-crystals(e184d9d8-ad44-41e0-8be9-bd381d6a21d6).html.
Повний текст джерелаPearce, Alexander James. "Electromechanical properties of atomically thin materials." Thesis, University of Exeter, 2014. http://hdl.handle.net/10871/15294.
Повний текст джерелаBaugher, Britton William Herbert. "Electronic transport in atomically thin layered materials." Thesis, Massachusetts Institute of Technology, 2014. http://hdl.handle.net/1721.1/91393.
Повний текст джерела125
Cataloged from PDF version of thesis.
Includes bibliographical references (pages 101-110).
Electronic transport in atomically thin layered materials has been a burgeoning field of study since the discovery of isolated single layer graphene in 2004. Graphene, a semi-metal, has a unique gapless Dirac-like band structure at low electronic energies, giving rise to novel physical phenomena and applications based on them. Graphene is also light, strong, transparent, highly conductive, and flexible, making it a promising candidate for next-generation electronics. Graphene's success has led to a rapid expansion of the world of 2D electronics, as researchers search for corollary materials that will also support stable, atomically thin, crystalline structures. The family of transition metal diclialcogenides represent some of the most exciting advances in that effort. Crucially, transition metal dichalcogenides add semiconducting elements to the world of 2D materials, enabling digital electronics and optoelectronics. Moreover, the single layer variants of these materials can posses a direct band gap, which greatly enhances their optical properties. This thesis is comprised of work performed on graphene and the dichalcogenides MoS 2 and WSe2. Initially, we expand on the family of exciting graphene devices with new work in the fabrication and characterization of suspended graphene nanoelectromnechanical resonators. Here we will demonstrate novel suspension techniques for graphene devices, the ion beam etching of nanoscale patterns into suspended graphene systems, and characterization studies of high frequency graphene nanoelectromechanical resonators that approach the GHz regime. We will then describe pioneering work on the characterization of atomically thin transition metal dichalcogenides and the development of electronics and optoelectronics based on those materials. We will describe the intrinsic electronic transport properties of high quality monolayer and bilayer MoS 2 , performing Hall measurements and demonstrating the temperature dependence of the material's resistivity, mobility, and contact resistance. And we will present data on optoelectronic devices based on electrically tunable p-n diodes in monolayer WSe2 , demonstrating a photodiode, solar cell, and light emitting diode.
by Britton William Herbert Baugher.
Ph. D.
Ye, Fan. "HIGHLY TUNABLE ATOMICALLY THIN RESONANTNANOELECTROMECHANICAL SYSTEMS (NEMS)." Case Western Reserve University School of Graduate Studies / OhioLINK, 2020. http://rave.ohiolink.edu/etdc/view?acc_num=case1589392684740436.
Повний текст джерелаFarrokhi, M. Javad. "ELECTRONIC PROPERTIES OF ATOMICALLY THIN MATERIAL HETEROSTRUCTURES." UKnowledge, 2019. https://uknowledge.uky.edu/physastron_etds/67.
Повний текст джерелаReale, Francesco. "Chemical vapour deposition of atomically thin tungsten disulphide." Thesis, Imperial College London, 2017. http://hdl.handle.net/10044/1/56620.
Повний текст джерелаVenanzi, Tommaso. "Optical and infrared properties of atomically thin semiconductors." Technische Universität Dresden, 2020. https://tud.qucosa.de/id/qucosa%3A73364.
Повний текст джерелаManca, Marco. "Study of the optoelectronic properties of atomically thin WSe2." Thesis, Toulouse, INSA, 2019. http://www.theses.fr/2019ISAT0030.
Повний текст джерелаTransition Metal Dichalcogenides (TMDs) are a family of layered materials with potential applications in optics and electronics. Following the discovery of graphene, TMDs were characterized and extraordinary physical properties were discovered: when thinned down to a monolayer, TMDs become direct band gap materials, therefore strongly facilitating light emission. The direct bandgap of these semiconductors is situated on the edge of the Brillouin zone, at the K-point. This is different from standard semiconductors for optoelectronics like GaAs where the bandgap is in the centre of the Brillouin zone. The optical properties are dominated by excitons, and light-matter interaction is extremely strong with up to 20% of light absorption per monolayer. In addition to a bandgap, TMDs present strong spin-orbit coupling and broken inversion symmetry. As a result, the optical transitions across the bandgap have chiral selection rules. The spin states in the valence and conduction bands are well separated in energy by the spin-orbit interaction. This makes it possible to optically address specific spin and valley states in momentum space and monitor their dynamics. As a result monolayer TMDs are exciting model systems for spin and valley physics: these research fields are termed spintronics and valleytronics. This motivated our work on the exact understanding of the optical transitions, their polarization selections rules and the different exciton states
Lorchat, Étienne. "Optical spectroscopy of heterostructures based on atomically-thin semiconductors." Thesis, Strasbourg, 2019. http://www.theses.fr/2019STRAE035.
Повний текст джерелаDuring this thesis, we have fabricated and studied by optical spectroscopy, van der Waals heterostructures composed of semiconductor monolayers (transition metal dichalcogenides, TMD) coupled to a graphene monolayer or to a plasmonic resonator. We have observed significant changes in the dynamics of the TMD optically excited states (excitons) when it is in direct contact with graphene. Graphene neutralizes the TMD monolayer and enables non-radiative transfer of excitons within less than a few picoseconds. This energy transfer process may be accompanied by a considerably less efficient, extrinsic photodoping. The reduced lifetime of TMD excitons in the presence of graphene has been exploited to show that their valley pseudo-spin maintains a high degree of polarization and coherence up to room temperature. Finally, by strongly coupling TMD excitons to the modes of a geometric phase plasmonic resonator, we have demonstrated, at room temperature, that the momentum of the resulting chiral polaritons (chiralitons) is locked to their valley pseudo-spin
Hudson, David Christopher. "Two dimensional atomically thin materials and hybrid superconducting devices." Thesis, University of Exeter, 2014. http://hdl.handle.net/10871/16034.
Повний текст джерелаКниги з теми "Atomically thin"
Kasirga, T. Serkan. Thermal Conductivity Measurements in Atomically Thin Materials and Devices. Singapore: Springer Singapore, 2020. http://dx.doi.org/10.1007/978-981-15-5348-6.
Повний текст джерелаMagorrian, Samuel J. Theory of Electronic and Optical Properties of Atomically Thin Films of Indium Selenide. Cham: Springer International Publishing, 2019. http://dx.doi.org/10.1007/978-3-030-25715-6.
Повний текст джерелаKagaku Gijutsu Shinkō Kikō. Kenkyū Kaihatsu Senryaku Sentā. Nanotekunorojī Zairyō Yunitto. Nijigen kinōsei genshi hakumaku ni yoru shinki zairyō, kakushin debaisu no kaihatsu: Development of new materials and innovative devices using atomically thin 2D functional films. Tōkyō-to Chiyoda-ku: Kagaku Gijutsu Shinkō Kikō Kenkyū Kaihatsu Senryaku Sentā Nanotekunorojī Zairyō Yunitto, 2012.
Знайти повний текст джерелаDragoman, Mircea, and Daniela Dragoman. 2D Nanoelectronics: Physics and Devices of Atomically Thin Materials. Springer, 2018.
Знайти повний текст джерелаDragoman, Mircea, and Daniela Dragoman. 2D Nanoelectronics: Physics and Devices of Atomically Thin Materials. Springer, 2016.
Знайти повний текст джерелаDragoman, Mircea, and Daniela Dragoman. 2D Nanoelectronics: Physics and Devices of Atomically Thin Materials. Springer, 2016.
Знайти повний текст джерелаKasirga, T. Serkan. Thermal Conductivity Measurements in Atomically Thin Materials and Devices. Springer, 2020.
Знайти повний текст джерелаMagorrian, Samuel J. Theory of Electronic and Optical Properties of Atomically Thin Films of Indium Selenide. Springer, 2019.
Знайти повний текст джерелаMagorrian, Samuel J. Theory of Electronic and Optical Properties of Atomically Thin Films of Indium Selenide. Springer International Publishing AG, 2020.
Знайти повний текст джерелаRoditchev, D., T. Cren, C. Brun, and M. V. Milošević. Local-Scale Spectroscopic Studies of Vortex Organization in Mesoscopic Superconductors. Edited by A. V. Narlikar. Oxford University Press, 2017. http://dx.doi.org/10.1093/oxfordhb/9780198738169.013.2.
Повний текст джерелаЧастини книг з теми "Atomically thin"
Kasirga, T. Serkan. "Atomically Thin Materials." In Thermal Conductivity Measurements in Atomically Thin Materials and Devices, 1–10. Singapore: Springer Singapore, 2020. http://dx.doi.org/10.1007/978-981-15-5348-6_1.
Повний текст джерелаLin, Yu-Chuan. "Atomically Thin Resonant Tunnel Diodes." In Springer Theses, 113–25. Cham: Springer International Publishing, 2018. http://dx.doi.org/10.1007/978-3-030-00332-6_7.
Повний текст джерелаPalacios-Berraquero, Carmen. "Atomically-Thin Quantum Light Emitting Diodes." In Quantum Confined Excitons in 2-Dimensional Materials, 71–89. Cham: Springer International Publishing, 2018. http://dx.doi.org/10.1007/978-3-030-01482-7_4.
Повний текст джерелаDragoman, Mircea, and Daniela Dragoman. "Electronic Devices Based on Atomically Thin Materials." In 2D Nanoelectronics, 161–96. Cham: Springer International Publishing, 2016. http://dx.doi.org/10.1007/978-3-319-48437-2_3.
Повний текст джерелаSchlichting, K. P., and H. G. Park. "Chapter 3. Mass Transport Across Atomically Thin Membranes." In Graphene-based Membranes for Mass Transport Applications, 43–75. Cambridge: Royal Society of Chemistry, 2018. http://dx.doi.org/10.1039/9781788013017-00043.
Повний текст джерелаLin, Yu-Chuan. "Atomically Thin Heterostructures Based on Monolayer WSe2 and Graphene." In Springer Theses, 89–101. Cham: Springer International Publishing, 2018. http://dx.doi.org/10.1007/978-3-030-00332-6_5.
Повний текст джерелаKasirga, T. Serkan. "Thermal Conductivity Measurements in 2D Materials." In Thermal Conductivity Measurements in Atomically Thin Materials and Devices, 11–27. Singapore: Springer Singapore, 2020. http://dx.doi.org/10.1007/978-981-15-5348-6_2.
Повний текст джерелаKasirga, T. Serkan. "Thermal Conductivity Measurements via the Bolometric Effect." In Thermal Conductivity Measurements in Atomically Thin Materials and Devices, 29–50. Singapore: Springer Singapore, 2020. http://dx.doi.org/10.1007/978-981-15-5348-6_3.
Повний текст джерелаQuereda, Jorge, Gabino Rubio-Bollinger, Nicolás Agraït, and Andres Castellanos-Gomez. "Mechanical Properties and Electric Field Screening of Atomically Thin MoS2 Crystals." In Lecture Notes in Nanoscale Science and Technology, 129–53. Cham: Springer International Publishing, 2013. http://dx.doi.org/10.1007/978-3-319-02850-7_6.
Повний текст джерелаGeohegan, David B., Alex A. Puretzky, Aziz Boulesbaa, Gerd Duscher, Gyula Eres, Xufan Li, Liangbo Liang, et al. "Laser Synthesis, Processing, and Spectroscopy of Atomically-Thin Two Dimensional Materials." In Advances in the Application of Lasers in Materials Science, 1–37. Cham: Springer International Publishing, 2018. http://dx.doi.org/10.1007/978-3-319-96845-2_1.
Повний текст джерелаТези доповідей конференцій з теми "Atomically thin"
"Atomically thin devices." In 2014 72nd Annual Device Research Conference (DRC). IEEE, 2014. http://dx.doi.org/10.1109/drc.2014.6872356.
Повний текст джерела"Atomically thin devices." In 2015 73rd Annual Device Research Conference (DRC). IEEE, 2015. http://dx.doi.org/10.1109/drc.2015.7175636.
Повний текст джерела"Atomically thin devices II." In 2015 73rd Annual Device Research Conference (DRC). IEEE, 2015. http://dx.doi.org/10.1109/drc.2015.7175651.
Повний текст джерела"Atomically thin devices I." In 2016 74th Annual Device Research Conference (DRC). IEEE, 2016. http://dx.doi.org/10.1109/drc.2016.7548470.
Повний текст джерела"Atomically thin devices II." In 2016 74th Annual Device Research Conference (DRC). IEEE, 2016. http://dx.doi.org/10.1109/drc.2016.7548482.
Повний текст джерелаTsukagoshi, K. "(Invited) Atomically-thin Semiconductors." In 2015 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2015. http://dx.doi.org/10.7567/ssdm.2015.d-2-1.
Повний текст джерелаLi, Xiangping. "Atomically thin 2D meta-optics." In Conference on Lasers and Electro-Optics/Pacific Rim. Washington, D.C.: OSA, 2020. http://dx.doi.org/10.1364/cleopr.2020.c11e_3.
Повний текст джерелаde Abajo, F. Javier Garcia. "Plasmonics with atomically thin materials." In 2017 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC). IEEE, 2017. http://dx.doi.org/10.1109/cleoe-eqec.2017.8087632.
Повний текст джерелаGarcía de Abajo, F. Javier. "Photonics with atomically thin materials." In Active Photonic Platforms (APP) 2022, edited by Ganapathi S. Subramania and Stavroula Foteinopoulou. SPIE, 2022. http://dx.doi.org/10.1117/12.2633948.
Повний текст джерелаEcharri, A. Rodriguez, Joel D. Cox, and F. Javier Garcia de Abajo. "Acoustic Plasmons in Atomically-Thin Heterostructures." In 2019 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC). IEEE, 2019. http://dx.doi.org/10.1109/cleoe-eqec.2019.8871900.
Повний текст джерелаЗвіти організацій з теми "Atomically thin"
Kaplan, Daniel, Kendall Mills, and Venkataraman Swaminathan. Chemical Vapor Deposition of Atomically-Thin Molybdenum Disulfide (MoS2). Fort Belvoir, VA: Defense Technical Information Center, March 2015. http://dx.doi.org/10.21236/ada613852.
Повний текст джерелаSoh, Daniel Beom Soo. Optical nonlinearities of excitonic states in atomically thin 2D transition metal dichalcogenides. Office of Scientific and Technical Information (OSTI), August 2017. http://dx.doi.org/10.2172/1395643.
Повний текст джерела